KR100739443B1 - Thin film deposition system - Google Patents

Abstract

A thin film deposition system is provided to reduce loss of the metal component in a process of charging a metal component in a solid state into a chamber, can efficiently remove alien substances existing in the chamber while the process is not proceeded, and can perform deposition of dissimilar metal thin films as well as similar metal thin. A thin film deposition system(1) comprises: a thin film deposition chamber(10) into which a metal source gas is injected to deposit a thin film on the object by ejecting the metal source gas onto a thin film deposition object(5); a plurality of bubblers(51,52) in which a metal source is charged; a plurality of metal transfer lines(61-63) for connecting the plurality of bubblers and the chamber such that metal particles by the metal source are supplied from at least one of the plurality of the bubblers into the chamber; gas injection lines(70-72) for injecting an inert gas into the plurality of bubblers; an alien substance suction line(90) connected to the metal transfer lines to move the alien substances by sucking alien substances existing in the thin film deposition chamber; a plurality of opening-and-closing valves(61a,62a,71a,72a,91) installed on the metal transfer lines, the gas injection lines and the alien substance suction lines to open and close channels of the respective lines; and a control part for controlling on/off operations of the plurality of opening-and-closing valves.

Description

Thin film deposition system

1 is a schematic diagram schematically showing a thin film deposition system according to the present invention,

2 is a perspective view of a thin film deposition chamber shown in the thin film deposition system of FIG.

3A and 3B are plan views of the lower chamber portion and the upper chamber portion, respectively;

4 is a cross-sectional view taken along line AA ′ of FIG. 2;

5 is an enlarged view illustrating main parts of FIG. 4;

6 is a view schematically illustrating a process of thin film deposition using the thin film deposition chamber of the present invention.

7 is an exemplary view for explaining an operation of removing the foreign matter present in the chamber according to an embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

1: Thin film deposition system 4: Exhaust part

10: chamber 10a: upper chamber portion

10b: lower chamber part 12: mounting bracket

20: metal euro 30: gas euro

30d: gas injection port 40: discharge flow path

40d: Inlet 51,52: First and second bubbler

61,62,63: first to third metal transfer lines

70 ~ 72: Gas injection line 81,82: 1st and 2nd branch pipe

90: foreign matter suction line 91: foreign matter suction line on / off valve

The present invention relates to a thin film deposition system, and in particular, it is possible to reduce the process loss due to the filling of a metal component in a solid state, and to simultaneously perform not only the same metal thin film but also a laminated thin film such as heterojunction, By mixing the deposited metal source gas and then depositing it on the object, the metal source gas having high uniformity can be deposited on the object at a constant temperature, and foreign matter present in the chamber can be efficiently removed while the process is not performed. It relates to a thin film deposition system.

Thin films are thin films with a thickness of several micrometers or less that cannot be realized by machining. These include oil film on the surface of the water, soapy film on the surface of the soap, rust on the surface of the metal, tin, tin zinc film, tin film, etc., but also various metals, semiconductors or insulators, etc. Semiconductor thin films, insulating thin films, compound semiconductor thin films, magnetic thin films, dielectric thin films, integrated circuits, superconducting thin films, etc., are subjected to a predetermined vacuum deposition method (also referred to as "vapor drying"), electroplating, oxidation in a gas or liquid, compound thermal decomposition. , Electron beam vapor deposition, laser beam vapor deposition, or the like.

When a substance becomes a thin film, its physical and chemical properties change greatly. For example, a metal that is not burned may be burned if it is made of foil. In general, the viscosity is increased, the surface tension is reduced, the coloration phenomenon is caused by the interference of light. These characteristics are used for experiments on various physics principles and the manufacture of chemistry machines.

On the other hand, the anti-reflection film of the optical lens is famous in practice, and thanks to the tendency of miniaturization of electronic devices, the manufacture of ultra-thin thin-film electronic circuits and the thinning of electronic components have been actively promoted.

By promoting the thin film as described above, because it is small, light, thin and large surface area is good heat dissipation has the advantage that can handle large power. In addition, the inductance is reduced, the high frequency characteristics are improved, and the performance is excellent as a thin and dense protective film. In addition, the magnetic thin film has advantages such as high speed of hysteresis inversion, high brightness such as light emitting thin film, and the like, and mass production of small material and small size at the same time.

As described above, the semiconductor thin film is usually manufactured using a method by vapor deposition. There are various methods of deposition, but mainly used in the field of industry, there are vacuum plating and deposition plating.

Vacuum evaporation refers to the heating of a small piece of metal or nonmetal in a vacuum to attach the vapor to an object surface. Put the object to be covered and the metal to be attached to the surface in a high vacuum container, and then evaporate the metal particles by heating with a current through the heater. This is how you attach.

The feature is that it can be applied to all articles and may be aluminium on the fabric or silver on the plastic. The antireflection coating of the optical lens is also made by vacuum deposition of magnesium fluoride or the like.

On the other hand, there is also a deposition plating. Evaporation plating is a method of forming a thin layer on the surface by putting the object and the metal to be plated in a vacuum and heating the metal to condense on the surface of the object. Such deposition plating is widely applied to flat panel displays, including semiconductor thin films, which are actively manufactured in recent years.

By the way, in the conventional thin film deposition apparatus using such deposition plating, a semiconductor or flat display (called "thin film deposition object") to be deposited is placed in a vacuum tank (called "chamber") in which a vacuum atmosphere is formed. In order to deposit a thin metal wire thin film by injecting a metal by using a laser, it is difficult to apply to the bulky one of the thin films because a certain space called a chamber is required, and the inside of the chamber is vacuum atmosphere. Because it must be made as well as manufacturing difficulties, there is a disadvantage that takes a lot of manufacturing costs.

Therefore, it is now possible to efficiently deposit thin films in the air without using a vacuum tank for forming a vacuum atmosphere, to form a multilayer thin film formed by stacking a plurality of homogeneous or different thin films, and to deposit a metal Not only is the source gas injected at a constant temperature, but also has a problem to develop a thin film deposition system that can be deposited in a high uniformity state by mixing.

The present invention has been made to solve the above problems of the prior art, by providing at least two or more bubblers and from which any gaseous metal source can be supplied to the chamber solid metal component It is an object of the present invention to provide a thin film deposition system that can reduce the process loss caused by filling.

Another object of the present invention is to provide a thin film deposition system capable of efficiently removing foreign matter present in the chamber while the process is not in progress.

It is also an object of the present invention to provide a thin film deposition system capable of simultaneously performing not only metal thin films of the same type but also laminated thin films such as heterojunctions.

In addition, to provide a thin film deposition system for mixing the metal source gas before the injection to the object, thereby improving the uniformity of the metal source gas deposited on the object, and to deposit a metal source gas having a constant temperature to the object It is done.

The constituent means constituting the thin film deposition system of the present invention proposed to solve the above technical problem is disposed in the upper atmosphere of the object at a predetermined distance from the thin film deposition object, the incoming metal source gas therein After mixing in the mixing space to be formed, a thin film deposition chamber for depositing a thin film by spraying the metal source gas to the object, a plurality of bubblers filled with a metal source therein, and among the plurality of bubblers A plurality of metal transfer lines connecting the plurality of bubblers and the chamber to supply the metal particles by the metal source to the chamber from at least one, and a gas input line for introducing an inert gas into the plurality of bubblers; And a foreign material suction connected to the metal transfer line to suck and move foreign materials existing in the thin film deposition chamber. And a control valve for controlling the on / off operation of the plurality of on / off valves provided in the causal, the metal transfer line, the gas injection line, and the foreign material suction line. It features.

In addition, the on-off valve provided in the foreign matter suction line is characterized in that the foreign material suction line is blocked while injecting a metal source gas to the object to deposit a thin film.

In addition, the on / off valve provided in the foreign substance suction line opens the foreign substance suction line so that foreign substances existing in the chamber can be sucked while the metal source gas is not injected to the object, and all remaining valves are blocked. It is characterized by.

In addition, the mixing space portion is characterized in that the ring shape having a space in which the metal source gas can be mixed, the mixed metal source gas through the plurality of gas injection passages formed on the bottom surface of the mixing space portion It is characterized in that the spray on the object.

In addition, the gas injection passage is characterized in that it is formed inclined between 30 ° ~ 80 ° relative to the horizontal plane, the gas injection passage is provided with a gas injection switch is characterized in that the opening and closing by the controller. .

In addition, the metal transfer line is provided with a heater, the heater is characterized in that it is provided continuously along the metal transfer line.

In addition, the metal flow path provided in the chamber and the metal particles supplied through the metal transfer line to the object, and the metal particles provided to the object through the metal flow path in the chamber to be isolated from the outside atmosphere A gas flow path provided to deliver the inert gas provided through one branch pipe of the gas injection line to the object, and at least one discharge flow path provided in the chamber to discharge by-products and inert gas generated after use; It characterized in that it comprises an exhaust portion for communicating with the flow passage for pumping used metal particles and inert gas discharged through the discharge passage.

In addition, the chamber is composed of the upper and lower chamber portions that are detachable from each other along the plate direction, wherein the metal flow path, through any one of the upper and lower chamber portions from any one or more of the plurality of bubblers And a metal guide section for guiding metal particles to the mixing space.

In addition, the metal guide section is formed in the lower chamber portion, the upper chamber portion of the upper portion of the mixing space portion is formed with a window glass pollution prevention exhaust section for preventing the metal source gas introduced into the mixing space portion to flow back. The lower chamber portion is characterized in that a gas supply path for supplying gas to the exhaust section is formed.

The gas flow path may include a first gas guide section for guiding the inert gas from the branch pipe through one of the upper and lower chamber portions, and an end portion of the first gas guide section formed at the upper chamber portion. And a second gas guide section communicating with the third gas guide section formed in the lower chamber portion and communicating with the second gas guide section.

In addition, the third gas guide section is characterized in that a plurality of gas injection port for injecting the gas guided from the first and second gas guide section toward the object by air curtain type is formed.

The discharge passage may include a first discharge passage portion disposed along the circumferential direction between the metal passage and the gas passage; It characterized in that it comprises a second discharge passage portion disposed in the circumferential direction on the radially outer side of the gas passage.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention thin film deposition system consisting of the above configuration means.

In the thin film deposition system 1 according to the present invention, as described above, a thin metal wire thin film may be deposited on the surface of the thin film deposition object 5 in the air by using a laser without a vacuum tank having to form a vacuum atmosphere. It would be.

The thin film deposited on the object 5 may include an oil film on the surface of the water, a film of soap bubbles, an rusted film on the metal surface, a tin film, a zinc film on tin metal, a tin film, and the like, and a metal thin film, a semiconductor thin film, and an insulating thin film. , Compound semiconductor thin films, magnetic thin films, dielectric thin films, integrated circuits, superconducting thin films, and the like.

Therefore, in the present embodiment, a thin film deposition object 5 is used as a flat panel display actively manufactured in the near field, and a thin film is deposited on the surface thereof.

In the thin film deposition system 1 according to the embodiment of the present invention, as shown in FIG. 1, the thin film deposition chamber disposed in the upper atmosphere of the object 5 at a predetermined distance from the thin film deposition object 5. (10) of the first and second bubblers (51, 52) and the first and second bubblers (51, 52) filled with a metal source (represented as a solid metal component) therein; First to third metal transfer lines 61 connecting the first and second bubblers 51 and 52 and the chamber 10 to supply the metal particles by the metal source to at least one of the chambers 10. ˜63), a gas input line 70 to 72 for introducing an inert gas into the first and second bubblers 51 and 52, and a branch connection to the metal transfer line 63 to connect the thin film deposition chamber ( 10) a foreign substance suction line 90 for sucking and moving various foreign substances present in the inside, first to third metal transfer lines 61 to 63, gas injection lines 70 to 72, and foreign substance suction lines On / off of the plurality of on / off valves 61a, 62a, 71a, 72a, 91 provided in the 90 and opening / closing the flow path of each line, and the plurality of on / off valves 61a, 62a, 71a, 72a The control unit (not shown) for controlling the operation, and the exhaust portion 4 for pumping by-products and inert gas generated in the deposition process of the thin film.

Among the components, the foreign matter suction line 90 is connected to the third metal transfer line 63 of the metal transfer line. In addition, an opening / closing valve 91 is provided in the middle of the foreign substance suction line 90, and the foreign substance suction line 90 is connected to the exhaust part 4.

The on-off valve 91 provided in the foreign matter suction line 90 is in a blocked state during the process. That is, while the metal source gas is sprayed on the object to deposit a thin film, the opening / closing valve 91 of the foreign substance suction line 90 is blocked, so that the metal source gas is not transferred along the foreign substance suction line 90. do.

On the other hand, the opening and closing valve 91 provided in the foreign matter suction line 90 is in an open state during the process. That is, while the process of depositing a thin film by injecting a metal source gas to the object is not in progress, the opening / closing valve 91 of the foreign substance suction line 90 is opened, and the foreign substance, etc. existing in the chamber is sucked into the foreign substance suction. To be transported along line 90.

At this time, the on-off valve 91 provided in the foreign matter suction line 90 is opened, but the remaining on / off valves 61a, 62a, 71a, and 72a are all in a blocked state, so that the foreign matter suction line 90 is opened. Make the suction power stronger. The suction force is made through a suction pump (not shown) provided in the exhaust part (4). On the other hand, the opening and closing operation of the on-off valve 91 is made under the control of the controller.

Among the structures of the thin film deposition chamber 10, a characteristic structure is that the mixing space portion 20b is formed therein. The mixing space portion 20b is a space for mixing the metal source gas introduced into the thin film deposition chamber 10. In addition, the mixed metal source gas may be sprayed onto the object.

That is, the mixing space portion 20b has a space in which the metal source gas can be mixed, as shown in FIGS. 3A and 3B, but has a ring shape. Meanwhile, as illustrated in FIGS. 4 and 5, a plurality of gas injection passages 20c are provided on the bottom surface of the mixing space 20b so that the mixed metal source gas may be injected to the object.

The plurality of gas injection passages 20c are inclined at a predetermined angle (denoted by θ in FIG. 5) with respect to a horizontal plane. As a result, the ends of the plurality of gas injection passages 20c are formed to face one point (deposition point). It is preferable that the inclination angle of the gas injection passage 20c is in a range between 30 ° and 80 °. A gas injection switch (not shown) is provided at an end of the gas injection passage 20c and is opened and closed under the control of the controller (not shown).

On the other hand, inside the first and second bubbles 51 and 52 filled with a metal source, for example, a solid metal component made of an inorganic compound such as chromium, molybdenum, tungsten, nickel or iron (metal Source) is charged. Of course, in some cases, the first and second bubblers 51 and 52 may be filled with the same metal source or different metal sources, respectively, so that not only the same metal thin films but also laminated thin films such as heterojunctions may be simultaneously performed. It has the advantage.

Heaters (not shown) for heating the first to third metal transfer lines 61 to 63 are provided in the first to third metal transfer lines 61 to 63. At this time, the heater serves to integrally wrap the first to third metal transfer lines 61 to 63 in the form of a hot wire, thereby helping to change the metal component in the solid state into the gas state. That is, when the metal source is moved to the chamber via the first to third metal transfer lines 61 to 63, the metal source is moved to the gas source metal source gas state.

Meanwhile, after the metal sources filled in the first and second bubblers 51 and 52 are changed into metal particles in a gaseous state, they are transferred to the chamber 10 through the first to third metal transfer lines 61 to 63. In order to be transferred, the first and second bubblers 51 and 52 themselves need to be heated, as well as a driving force for pushing the metal particles into the first to third metal transfer lines 61 to 63.

To this end, in this system, an inert gas such as argon (Ar) is introduced into the first and second bubblers 51 and 52 through gas injection lines 70 to 72. Of course, as described above, each of the plurality of on-off valves 61a, 62a, 71a, 72a for opening and closing the flow paths can be turned on and off by the control unit.

Therefore, when the control unit operates the first opening / closing valve 61a to block the flow path of the corresponding first metal transfer line 61, only the metal particles in the second bubbler 52 are the second metal transfer line 62. Through to the metal flow path 20 in the chamber 10, involved in the thin film deposition.

However, after the metal source in the second bubbler 52 is exhausted in the process, the controller operates the second opening / closing valve 62a to block the flow path of the second metal transfer line 62. do. Then, this time, only the metal particles in the first bubbler 51 are provided to the metal channel 20 in the chamber 10 through the first metal transfer line 61 to participate in thin film deposition.

At this time, the operator only needs to refill the solid metal source in the second bubbler 52, which is empty inside, and thus does not need to stop the operation of the system as in the prior art. Therefore, it is possible to significantly reduce the loss (Loss) in the process due to the filling of the high pressure gas.

At this time, some sections of the gas injection line 70 are provided with first and second branch pipes 81 and 82 so as to branch the inert gas and use them for different purposes. The first branch pipe 81 is connected to the gas flow path 30 to be described later to serve as an air curtain, and the second branch pipe 82 is introduced into the window glass (W / G) section.

Of course, in addition to these configurations, a means for arranging the chamber 10, various tables, or an apparatus for loading and unloading the object 5 may be required, but the rest of the configuration is considered to be a generalized configuration, and description thereof is omitted. Let's do it.

The thin film deposition chamber 10 is used as a means for depositing a thin film on the object 5 in the air, as shown in FIGS. 2, 3A, 3B, and 4.

The chamber 10 is composed of upper and lower chamber portions 10a and 10b that are detachable from each other along the plate surface direction. On one side of the upper chamber portion 10a, a mounting bracket 12 for mounting the chamber 10 to the thin film deposition system 1 is provided. A plurality of mounting holes 12a are formed in the mounting bracket 12.

On the other hand, in the chamber 10 through the first to the third metal transfer line (61 ~ 63) through one or more of the first and second bubblers (51, 52), the metal particles to the object ( The metal flow passage 20 for delivering to the corresponding position of 5) and the first branch pipe are provided in the chamber 10 so that the metal particles provided to the object 5 through the metal flow passage 20 can be isolated from the external atmosphere. A gas flow passage 30 for delivering an inert gas branched through the 81 and a plurality of discharge passages 40 connected to the exhaust part 4 to discharge by-products and inert gas generated after use are provided.

The metal flow path 20 is a metal source from one or more of the first and second bubblers 51 and 52 to the lower chamber portion 10b through the first to third metal transfer lines 61 to 63. It is configured to include a metal guide section 20a for guiding gas. The metal source gas introduced through the metal guide section 20a is introduced into the mixing space 20b formed in the lower chamber portion 10b.

If the upper and lower chamber portions 10a and 10b are formed of a square plane portion 11a and a partial arc portion 11b as shown in Figs. 2 to 3b, the mixing space portion 20b is a portion. It is advantageous to form an annular shape around the axis of the circular arc portion 11b. However, the chamber 10 does not necessarily have to have a shape as shown, but may form a quadrangular shape, a circular shape, a triangular shape, or the like as a whole.

On the other hand, in the upper chamber portion 10a, which is the upper region of the mixing space 20b, the metal source gas, which is the metal particles introduced through the metal guide section 20a and the mixing space 20b, flows backward. An exhaust section 25a for preventing window glass (W / G) contamination is formed.

That is, in the process of supplying the metal source gas, which is a metal particle, to the thin film deposition object 5 through the metal guide section 20a and the mixing space portion 20b, the metal particles are moved to the outside through the space indicated by reference numeral 25a. It should not be discharged.

Therefore, in the present invention, the inert gas that is branched through the second branch pipe 82 is also supplied to the exhaust section 25a, which is an area designated as 25a, through the gas supply passage 25 formed in the lower chamber portion 10b. This prevents reverse flow of the metal particles.

The gas flow passage 30 flows to the gas injection line 70 and branches to the first gas guide section 30a for guiding the inert gas supplied to the lower chamber portion 10b through the first branch pipe 81. ), A second gas guide section 30b formed in the upper chamber portion 10a and communicating with an end portion of the first gas guide section 30a, and a second gas guide section formed in the lower chamber portion 10b. And a third gas guide section 30c in communication with 30b).

A plurality of gas injection ports 30d are formed in the third gas guide section 30c for injecting the gas guided from the first and second gas guide sections 30a and 30b toward the object 5 in an air curtain manner. It is. As a result, since the high-pressure inert gas introduced through the first to third gas guide sections 30a to 30c is injected into the object 5 through the plurality of gas injection ports 30d in an air curtain manner, Impurities can prevent the reaction with metal particles. That is, the virtual sealed space can be formed.

Therefore, in the process of depositing a thin film at a predetermined position of the object 5 through the metal particles, it is possible to effectively prevent the pure metal from being deposited due to impurities such as coral or nitrogen contained in the atmosphere.

In addition, due to the air curtain-type gas injection method, the present chamber 10 has an advantage that can be used in the atmosphere. At this time, the high-pressure gas injected into the object 5 may be employed in various ways, but is employed as argon (Ar) in the present embodiment.

While the metal flow passage 20 and the gas flow passage 30 are provided one by one in the chamber 10 of the present embodiment, two discharge passages 40 are provided. Of course, in some cases, the metal channel 20, the gas channel 30 and the discharge channel 40 may be further formed, but will be described as limited to the two discharge channel 40 as shown.

The discharge passage 40 of the embodiment has a first discharge passage portion 41 disposed along the circumferential direction between the metal passage 20 and the gas passage 30, and the circumferential direction on the radially outer side of the gas passage 30. The second discharge passage portion 42 is disposed along.

The first and second discharge passage portions 41 and 42 are formed in the lower chamber portion 10b to suck the by-products, the high pressure gas, and the gas in the atmosphere existing in the space between the object 5 and the chamber 10. The first suction section 40a, the second suction section 40b formed in the upper chamber portion 10a and communicating with the first suction section 40a, and both ends of the exhaust section 4 and the second suction section. The third suction section 40c, which is connected to the respective 40b, delivers the metal particles, the high pressure gas, and the atmospheric gas, which are sucked through the first and second suction sections 40a and 40b, to the exhaust section 4, respectively. consist of.

At this time, the first suction section 40a sucks by-products, high pressure gas, and gases in the air in the space between the object 5 and the chamber 10 in the same manner as the gas injection port 30d described above. A plurality of suction ports 40d are formed for this purpose.

As shown in the drawing, when the plurality of inlets 40d are formed, a larger amount of metal particles, a high pressure gas, and gases in the atmosphere may be uniformly discharged within a faster time.

At this time, the diameter of the suction port 40d is larger than the gas injection port 30d will be more advantageous to increase the discharge efficiency.

Meanwhile, the sealing member 14 (see FIG. 5) is interposed in the contact area where the upper and lower chamber portions 10a and 10b contact each other. In particular, the sealing member 14 is disposed in an area where the metal flow path 20, the gas flow path 30, and the discharge flow path 40 contact each other in the upper and lower chamber portions 10a and 10b. To prevent leakage.

A process of depositing a thin film at a predetermined position on the surface of the object 5 using the thin film deposition system 1 having such a configuration will be described below with reference to FIG. 6.

First, the chamber 10 is disposed parallel to the object 5 on the upper portion of the object 5 at a predetermined distance from the thin film deposition object 5. Of course, this is done automatically by the control and drive systems programmed in the apparatus.

After the chamber 10 is arranged, if the control unit operates the first opening / closing valve 61a to block the flow path of the corresponding first metal transfer line 61, only the metal particles in the second bubbler 52 To the metal flow path 20 in the chamber 10 through the second metal transfer line 62, it is involved in the thin film deposition.

However, after the metal source in the second bubbler 52 is exhausted in the process, the controller operates the second opening / closing valve 62a to block the flow path of the second metal transfer line 62. do. Then, this time, only the metal particles in the first bubbler 51 are provided to the metal channel 20 in the chamber 10 through the first metal transfer line 61 to participate in thin film deposition.

Of course, both the first and second open / close valves 61a and 62a may be operated by the control unit so that different metal sources may simultaneously perform a laminated thin film such as heterojunction.

When metal particles from any one or both of the first and second bubblers 51 and 52 are supplied via the first to third metal transfer lines 61 to 63, the metal guide section 20a and Through the mixing space 20b, the thin film is deposited on the surface of the object 5 by the laser at the same time as it is ejected to the corresponding position of the object 5 (see FIG. 6B).

The metal source gas mixed in the mixing space 20b is sprayed onto the surface of the object 5 through the gas injection passage 20c formed to be inclined at a predetermined angle with respect to the horizontal plane.

At the same time as the metal particles are supplied, an inert gas from the first branch pipe 81 branched from the gas injection line 70 is provided and injected into the first to third gas guide sections 30a to 30c through the corresponding gas line. . The injected high pressure gas forms an air curtain so that the metal source gas, which is a metal particle supplied to the object 5, does not come into contact with air in the atmosphere (see FIG. 6).

As such, the high-pressure gas is injected into the air curtain type toward the object 5, and metal particles are supplied to the inside thereof, whereby a thin film is started to be deposited on the surface of the object 5. Of course, by-products, inert gases, and atmospheric gases generated in the process of depositing a thin film on the surface of the object 5 are sequentially passed through the exhaust part 4 via the first to third suction sections 40a to 40c. On the other hand, it is discharged | emitted to the exterior also through the exhaust section 25a.

Thus exhausted metal particles, by-products generated by reacting with the metal particles, the high-pressure gas and the gas in the atmosphere is discharged through the exhaust portion 4 has the additional advantage of preventing the external leakage of harmful gases.

On the other hand, as shown in Figure 7, while the above process is not in progress, the process of discharging each foreign matter present in the chamber to the outside.

That is, while not performing a process of depositing a thin film by spraying a metal source gas on the object, only the opening / closing valve 91 provided in the foreign matter suction line 90 shown in FIG. Shut off valves. Then, according to the pumping operation of the suction pump (not shown) provided in the exhaust portion 4, the foreign matter 93 existing in the chamber is moved out of the chamber along the metal guide section. Then, the moved foreign matters 93 may be discharged to the exhaust part 4 through the foreign matter suction line 90.

As described above, according to the present invention, at least two or more bubblers are provided, and gas loss can be supplied to the chamber 10 from any one of them. (Loss) can be reduced.

In addition, there is an advantage in that not only the same metal thin film but also a laminated thin film such as heterojunction can be simultaneously performed.

Although the present invention has been described in detail with reference to the drawings, the present invention is not limited thereto.

In the above-described embodiment, two first and second bubblers 51 and 52 and two corresponding first and second gas lines 61 and 62 are provided in the thin film deposition system 1. One or more bubblers and corresponding gas lines may be provided.

In the above-described embodiment, the upper and lower chamber portions 10a and 10b have a shape having a quadrangular flat portion 11a and a partial arc portion 11b. However, the upper and lower chamber portions 10a and 10b are within the scope of the present invention even though they have other shapes. Of course.

In the above-described embodiment, a single air curtain is formed through the gas flow passage 30, but if necessary, two or more gas flow passages 30 may be formed so that two or more air curtains are formed.

According to the thin film deposition system of the present invention having the above-described configuration and preferred embodiments, at least two bubblers are provided and the gaseous metal source can be supplied to the chamber from any one of them. There is an advantage to reduce the process (Loss) due to the filling of the metal component.

In addition, since the foreign matter present in the chamber may be continuously sucked and removed while the deposition process of injecting the metal source gas into the object is not performed, the influence of the foreign matter may be minimized when the deposition process is performed again. There is an advantage.

In addition, there is an advantage in that not only the same metal thin film but also a laminated thin film such as heterojunction can be simultaneously performed.

In addition, since the metal source gas is mixed in the mixing space before spraying the object, the uniformity of the metal source gas deposited on the object may be improved, and the metal source gas having a constant temperature may be deposited on the object.

Claims (14)

It is disposed in the upper atmosphere of the object at a predetermined distance from the thin film deposition object, after mixing the incoming metal source gas in the mixing space formed therein, and then spraying the metal source gas to the object to deposit a thin film A thin film deposition chamber; A plurality of bubblers having a metal source filled therein; A plurality of metal transfer lines connecting the plurality of bubblers and the chamber to supply metal particles by the metal source to at least one of the plurality of bubblers; A gas injection line for introducing an inert gas into the plurality of bubblers; A foreign substance suction line connected to the metal transfer line to suck and move foreign substances present in the thin film deposition chamber; An on / off valve provided in the metal transfer line, the gas injection line and the foreign substance suction line to open and close the flow path of each line; Thin film deposition system comprising a control unit for controlling the on / off operation of the plurality of on-off valves. The method according to claim 1, The on-off valve provided in the foreign matter suction line is a thin film deposition system, characterized in that the foreign matter suction line is blocked while injecting a metal source gas to the object to deposit a thin film. The method according to claim 1, The on / off valve provided in the foreign substance suction line opens the foreign substance suction line so that foreign substances existing in the chamber can be sucked while the metal source gas is not injected to the object, and all the remaining valves are blocked. Thin film deposition system. The method according to claim 1, The mixing space portion is a thin film deposition system, characterized in that the ring shape having a space in which the metal source gas can be mixed. The method according to claim 4, And the mixed metal source gas is sprayed onto the object through a plurality of gas injection paths formed on the bottom surface of the mixing space. The method according to claim 5, The gas injection passage is thin film deposition system, characterized in that formed inclined between 30 ° ~ 80 ° relative to the horizontal plane. The method according to claim 6, Thin film deposition system, characterized in that the gas injection switch is provided at the end of the gas injection passage, it is opened and closed by the control unit. The method according to claim 1, The metal transfer line is provided with a heater, the heater is thin film deposition system, characterized in that provided continuously along the metal transfer line. The method according to any one of claims 1 to 8, A metal flow path provided in the chamber to deliver the metal particles supplied through the metal transfer line to the object; A gas flow path provided in the chamber so that the metal particles provided to the object through the metal flow path are isolated from the outside atmosphere, and delivering an inert gas delivered through one branch pipe of the gas injection line to the object; At least one discharge passage provided in the chamber to discharge by-products and inert gases generated after use; Thin film deposition system comprising an exhaust portion for communicating the discharge passage to pump the used metal particles and inert gas discharged through the discharge passage. The method according to claim 9, The chamber is composed of upper and lower chamber portions detachable from each other along the plate direction, The metal flow passage, characterized in that it comprises a metal guide section for guiding the metal particles through the one of the upper and lower chamber portion from any one or more than one of the plurality of bubblers to the mixing space portion. Thin film deposition system. The method according to claim 10, The metal guide section is formed in the lower chamber portion, the upper chamber portion of the upper portion of the mixing space portion is formed with a window glass pollution prevention exhaust section for preventing the metal source gas introduced into the mixing space portion to flow back, the lower chamber Thin film deposition system, characterized in that the gas supply path for supplying gas to the exhaust section is formed. The method according to claim 10, wherein the gas flow path, A first gas guide section for guiding the inert gas through any one of the upper and lower chamber portions from the branch pipe; A second gas guide section formed in the upper chamber portion and communicating with an end portion of the first gas guide section; And a third gas guide section formed in the lower chamber and communicating with the second gas guide section. The method according to claim 12, And a plurality of gas injection ports are formed in the third gas guide section for injecting the gas guided from the first and second gas guide sections toward the object. The method according to claim 9, A first discharge passage portion disposed in the circumferential direction between the discharge passage and the metal passage; And a second discharge passage portion disposed along the circumferential direction on the radially outer side of the gas passage.

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