KR100858700B1 - Heating Apparatus for Batch Type Furnace - Google Patents

Abstract

In the present invention, in order to perform a batch heat treatment, a reaction chamber in which a plurality of heating zones are formed up and down corresponds to a sudden temperature change of a lower heating zone adjacent to the inlet, and when the heater is damaged, the batch reaction chamber is easy to replace. A heating device is provided.

The present invention for this purpose is that the heating wire is arranged in a coil shape surrounding the outer periphery of the reaction chamber along the plurality of heating zones divided up and down except for the lower heating zone located at the inlet of the reaction chamber in the vertical heat treatment reaction chamber of the batch method It consists of a main heater and a heat treatment heater installed to correspond to the temperature change at the inlet in the lower heating region of the inlet of the reaction chamber.

Here, the heat treatment heater may be any one of the Kanthal heater or the lamp heater. When the Kanthal heater is applied, the Kanthal heater is installed so as to be divided into a plurality of radial zones along the outer circumference of the reaction chamber.

When the lamp heater is applied, a plurality of lamp heaters are installed along the outer circumferential surface of the heating block surrounding the outer circumference of the vertical reaction chamber.

Semiconductor, Substrate, Placement Method, Reaction Chamber, Kanthal Heater, Lamp Heater, Thermal Shock, Thermal Load

Description

Heating Apparatus for Batch Reaction Chamber {Heating Apparatus for Batch Type Furnace}

1A is a conceptual diagram illustrating a semiconductor manufacturing apparatus including a batch heat treatment process;

1B is a conceptual diagram illustrating a heating apparatus of a conventional arrangement method;

1C is a plan explanatory diagram for explaining a problem occurring in the conventional heating apparatus of the arrangement method;

Figure 2a is a conceptual diagram showing that the Kanthal heater is applied as an embodiment of the heating apparatus according to the present invention,

Figure 2b is an enlarged conceptual explanatory diagram showing that the Kanthal heater is applied as an embodiment of the heating apparatus according to the present invention,

Figure 3a is a conceptual diagram showing that the lamp heater is applied as another embodiment of the heating apparatus according to the present invention,

3A is an enlarged conceptual explanatory diagram showing a lamp heater applied as another embodiment of the heating apparatus according to the present invention.

-Explanation of symbols for the main parts of the drawings-

1-reaction chamber, 2-boat,

3-lifting device, 4-1 ~ 4-5,-heating wire,

5-heating block, 6-insulator,

7-potentiometer, 10-main heater,

12-heat treatment heater, 14-Kanthal heater,

16-lamp heater, 18-power sensor

20-control unit, 22-warning means,

The present invention relates to a heating apparatus of a batch type reaction chamber for coping with damage of a lower heating wire installed at the lowermost part of a batch type semiconductor heat treatment device reaction chamber.

In general, a semiconductor manufacturing process or a manufacturing process such as a flat panel display substrate (LCD, PDP) to which it is applied includes a plurality of heat treatment processes. For example, a heat treatment process is a unit process in a thin film deposition process, an activation process, or a crystallization process. Included.

For example, a typical method of thin film formation including the heat treatment process is chemical vapor deposition (CVD), which is a method of depositing a product on a substrate surface by reacting a gaseous compound on a heated substrate surface In particular, it is a very important unit process in the production process of semiconductors and flat panel display substrates (for example, LCD and PDP).

The microstructure and growth results of the thin film are determined by the nucleation process and surface diffusion on the growth interface, and are affected by substrate temperature, reactor pressure, and gas composition, and microstructure changes occur by heat treatment or subsequent processes. The change has a direct effect on the properties of the thin film.

Accordingly, the semiconductor manufacturing apparatus includes a reaction chamber that provides a process space, a heating device for creating a heat treatment environment within the reaction chamber, and a gas supply device for supplying a gaseous source gas as a thin film material.

Exemplary Drawings FIG. 1 shows a semiconductor manufacturing apparatus and shows a batch processing apparatus for processing a plurality of substrates.

The batch boat 2 for mounting a large amount of the semiconductor substrate 100 includes a hoisting apparatus 3 for input into the reaction chamber 1, and a station and a station for loading / unloading the semiconductor substrate into the boat. Is mediated by an end effector (robot arm).

A heating apparatus for creating a heat treatment environment for a large amount of semiconductor substrates in accordance with the batch-type treatment method, and the drawing is shown in the reaction chamber 1 to heat-treat a large amount of semiconductor substrates introduced in a batch type from the reaction chamber 1. The heating wires 4-1 and 4-5 wound by the coil shape are shown.

Since the heating apparatus is a batch type substrate processing apparatus, the upper and lower regions are divided into heating regions (T1, T2, T3, T4, and T5) and driven as independent control for each sector. It is fixed through 6).

On the other hand, each heating zone is a step-by-step heat generation is performed through a temperature control device (variable resistor: 7), a high temperature environment is created inside the reaction chamber by the radiation wavelength passing through the reaction chamber (1).

However, the conventional heating apparatus has a problem in that shortage, damage and deformation of the heating wires 4-5 occur especially in the lower region. This is because the lowermost heating zone T5, which is the inlet of the reaction chamber 1, is located in the abrupt heat change zone and generates heat load.

The heat load generated at this time is the axial force along the heating wire 4-5, resulting in heat load or torsion due to thermal expansion and contraction, and the internal stress and repeated heat load eventually damage the heating wire 4-5. Let's go.

Damage to heating wire is divided into deformation and disconnection. If disconnection occurs, heating to the lower region cannot be performed.

Deformation is deformed inwardly because the heating block 5 presses the outer periphery of the heating wire 4-5 and the radially provided insulator 6 supports each point, especially when expansion occurs as shown in FIG. 1C. ) Is generated and it is bent corrugated to contact the outer circumference of the reaction chamber 1, thereby damaging the reaction chamber.

It has been found that the deformation caused by the heat load is concentrated in the lower region, and the replacement and maintenance caused by the damage of the lower region causes a problem of lowering the reliability of the entire apparatus, which in turn causes a process interruption.

Accordingly, the present invention has been made to solve the above problems, in the reaction chamber in which a plurality of heating zones are formed up and down to perform a batch heat treatment, corresponding to the rapid temperature change of the lower heating zone adjacent to the inlet, It is an object of the present invention to provide a heating device of a batch reaction chamber that is easy to replace when damaged.

The present invention for this purpose is that the heating wire is arranged in a coil shape surrounding the outer periphery of the reaction chamber along the plurality of heating zones divided up and down except the lower heating zone located at the inlet of the reaction chamber in the vertical heat treatment reaction chamber of the batch method It consists of a main heater and a heat treatment heater installed to correspond to the temperature change at the inlet in the lower heating region of the inlet of the reaction chamber.

Here, the heat treatment heater may be any one of the Kanthal heater or the lamp heater. When the Kanthal heater is applied, the Kanthal heater is installed so as to be divided into a plurality of radial zones along the outer circumference of the reaction chamber.

When the lamp heater is applied, a plurality of lamp heaters are installed along the outer circumferential surface of the heating block surrounding the outer circumference of the vertical reaction chamber.

DETAILED DESCRIPTION Hereinafter, the most preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the present invention. . Other objects, features, and operational advantages, including the purpose, working effects, and the like of the present invention will become more apparent from the description of the preferred embodiment.

For reference, the embodiments disclosed herein are presented by selecting the most preferred examples to help those skilled in the art among various possible examples, and the technical idea of the present invention is not necessarily limited or limited only by the embodiments. Various changes, modifications, and other equivalent embodiments may be made without departing from the spirit of the present invention.

Exemplary drawings Figure 2 is a conceptual diagram showing that the Kantal heater is applied as one embodiment of the heating apparatus according to the present invention, Figure 3 is a concept showing the lamp heater is applied as another embodiment of the heating apparatus according to the present invention It is explanatory drawing.

According to the present invention, the plurality of heating zones T1 to T5 are divided into upper and lower zones of the vertical heat treatment reaction chamber 1 of the batch method, except for the lower heating zone T5 located at the inlet of the reaction chamber 1. Heating wires 4-1 to 4-4 are arranged in a coil shape from the top to the bottom in a shape surrounding the outer circumference of the reaction chamber 1 in each heating zone T1 to T4 of the main heater 10. And a heat treatment heater 12 is installed in the lower heating region at the inlet of the reaction chamber 1 so as to correspond to the temperature change at the inlet over a cylindrical outer peripheral region surrounding the reaction chamber outer periphery. The heating device of the chamber.

As a specific embodiment, the heat treatment heater 12 is a Kanthal heater device, as shown in Figure 2, the Kanthal heater 14 is divided into a plurality of radial zones along the outer periphery of the reaction chamber so as to be replaced separately at each location. It is installed with a separate authorization line, characterized in that installed while reciprocating the upper and lower zones in the corresponding radial zone to cover each divided radial zone.

In another embodiment, the heat treatment heater is a lamp heater device, characterized in that a plurality of lamp heaters 16 are installed along the outer circumferential surface of the heating block surrounding the outer circumference of the vertical reaction chamber as shown in FIG.

In addition, the power supply detecting sensor 18 is installed in the application line for each location in common to the embodiments, and is connected to the input terminal of the control unit 20, and the power supply detecting sensor is connected to the output terminal of the control unit 20. It is preferable that the warning means 22 for notifying a failure when the power supply is interrupted by 18 be connected.

From the power supply detecting sensor 18 and the warning means 22, it is possible to monitor the operating state of the radial allocation area of the Kanthal heater 14 or the lamp heater 16 as a heating unit, and in case of damage to the heating unit, Replacement can be performed.

As described above, the present invention corresponds to the rapid temperature change of the lower heating zone adjacent to the inlet in the reaction chamber in which a plurality of heating zones are formed up and down to perform the batch heat treatment, and is easy to replace when the heater is damaged. Provided is a heating apparatus of a batch reaction chamber.

The present invention for this purpose is the reaction chamber (a) along the plurality of heating zones (T1 ~ T5) divided up and down except for the lower heating zone (T5) located at the inlet of the reaction chamber (1) in the vertical heat treatment reaction chamber of the batch method ( In the coil shape surrounding the outer periphery of 1), the main heater 10 in which the heating wires 4-1 to 4-5 are arranged, and the temperature change at the inlet in the lower heating region T5 which is the inlet of the reaction chamber. It consists of a heat treatment heater 12 installed correspondingly.

The heat treatment heater 12 is itself a structure corresponding to the heat load. The heat treatment heater is used in a rapid thermal process (RTP) and is intended to increase the process speed by reducing the heating and cooling time in the reaction chamber which are delayed before and after the process.

The heat treatment apparatus 12 is originally applied to a sheet type for processing a semiconductor substrate one by one, and is disposed above the chamber to heat the surface of the substrate.

In the present invention, the heat treatment heater 12 and the main heater 10 as a conventional heater is combined, the inlet of the reaction chamber 10 with a rapid temperature change is in charge of the heat treatment heater 12 having durability against thermal shock, The excluded area is the main heater 10 as the existing heater.

Heating through the heat treatment heater 12 follows the heating process of the main heater 10, and as a result, the heat treatment heater 12 applied to the present invention is not mounted for the purpose of performing the heat treatment process, the heat treatment heater 12 The heat shock-resistant heating structure is more accurate, and can be referred to as a change or change of use.

In addition, according to the structure of the reaction chamber 1, it is difficult to apply the existing heat treatment heater immediately, and furthermore, the heat treatment heater 12 also cannot be avoided to be frequently exposed to the heat load of rapid cooling, and thus the present invention. In the heat treatment heater 12 is divided into a plurality of units to allocate a zone, in case of damage in any zone so that the unit of the corresponding zone can be replaced so that rapid replacement is performed.

Specifically, as described above, a reaction chamber 1 for processing a plurality of substrates in a batch manner is provided, and the reaction chamber is divided into a plurality of heating zones T1, T2, T3, T4, and T5 to be independent. Heating is carried out.

In the remaining zones T1 to T4 except for the lower heating zone T5 located at the inlet of the reaction chamber, heating wires 4-1 to 4-4 are disposed in the upper and lower zones of each heating zone, thereby providing the main heater 10. ) Is installed.

In addition, a heat treatment heater 12 is installed as a heating structure corresponding to a thermal shock in the lower heating region T positioned at the inlet of the reaction chamber 1 and having a rapid temperature change.

According to the heat treatment heater 12 is divided into each embodiment, the Kanthal heater 14 or the lamp heater 16 may be applied.

The heat treatment heater shown in FIG. 2 shows that the Kanthal heater 14 is applied. As an example, when the Kanthal heater 14 is applied, it may be applied as a bare type, and is mounted to the heating block 5 through an insulator (not shown).

The Kanthal heater 14 is radially divided into each zone to have a separate application line, specifically, connected in parallel from one application line.

If one unit is damaged from such a parallel connection, only the unit can be replaced quickly, and the irrationality of replacing the entire canal heater is eliminated.

As the Kanthal heater 14 is mounted divided into radial zones, it is installed repeatedly along the top and bottom to cover the arc of the radial charge zone.

Then, any damage in the Kantal heater 14 is performed from the monitoring of the power supply, which has a power supply detecting sensor 18 in the application line of each heater unit, and connects it to the input terminal of the control unit 20. The control unit 20 can be arranged to monitor the power supply.

In addition, the output unit of the control unit 20 generates a warning means 22, for example, a warning lamp flashes and a warning sound to notify the replacement request of the heater unit. In this case, the warning lamp may be provided in a corresponding number for each divided heating zone to notify the heater unit in which the damage occurs.

Next, FIG. 3 shows that the lamp heater device is installed in the lower region as another embodiment of the heat treatment heater, and the lamp heater 16 is a representative heat treatment heater.

For example, the halogen lamp as the lamp heater 16 has a strong resistance to thermal shock, so that even after being put into cold water after heating, it is not damaged.

The lamp heater device should be changed according to the shape of the batch type reaction chamber 1, and a plurality of lamp heaters 16 are installed along the outer circumferential surface of the heating block 5 surrounding the outer circumference of the vertical type reaction chamber.

In addition, as a general matter of the lamp heater 16, a reflector (not shown) may be mounted. The reflector may be applied to the cone type for each lamp location, and may be installed along the inner circumferential surface of the heating block. When installed along the inner circumferential surface of the heating block, it may be installed as a separate panel, the reflective layer may be provided on the inner circumferential surface of the heating block.

On the other hand, each lamp constituting the lamp heater 16 has a separate connection terminal from the power supply line, and the power supply can be monitored for each of the locations as in the above example. From this, damage to each lamp can be monitored and a quick replacement in case of lamp damage can be performed.

The heater for processing the reaction chamber of the batch method from the present invention comprises a heat treatment heater 12 as a heating structure corresponding to the main heater 10 and the thermal shock.

Heating for the process is controlled such that the heat treatment heater 12 follows the heating process of the main heater 10. In addition, the heat treatment heater 12 operates as a structure corresponding to a thermal shock in a lower region that is an inlet of the reaction chamber 1 in which a rapid temperature change occurs when the batch type boat enters and exits.

On the other hand, since the heat treatment heater 12 is mounted separately for each location and its replacement is easy, it is possible to quickly cope with damage to the heater in the lower region.

As described above, according to the present invention, a heater for processing a reaction chamber of a batch method having a plurality of heating zones divided into upper and lower sides is composed of a heat treatment heater as a heating structure corresponding to a main heater and a thermal shock, wherein the heat treatment heater is It is provided to cover the inlet area of the reaction chamber with a rapid temperature change, thereby preventing the damage of the heating wire and the device caused by the deformation in the lower heating area, and ultimately improving the reliability of the heat treatment apparatus through the batch reaction chamber. There is.

In addition, the heat treatment heater is installed to be bent in a plurality of areas in the lower heating area of the batch reaction chamber has the effect of performing a partial replacement and quick replacement when the heater is damaged.

Claims (3)

In the vertical heat treatment reaction chamber 1 in which the upper and lower zones are divided into a plurality of heating zones T1 to T5, Coil shape from the top to the bottom in the shape surrounding the outer circumference of the reaction chamber 1 in each of the heating zones T1 to T4 except for the lower heating zone T5 located at the inlet of the reaction chamber 1. The heating wires 4-1 to 4-4 are arranged so that the main heater 10 is installed; In the lower heating region T5, which is an inlet of the reaction chamber 1, a heat treatment heater 12 having a plurality of application lines is installed to correspond to temperature change over a cylindrical outer peripheral region surrounding the reaction chamber outer circumference, each of which is provided. The power supply detecting sensor 18 is installed in the authorization line and connected to the input terminal of the control unit 20. The output terminal of the control unit 20 warns of a failure when the power supply is stopped by the power supply detecting sensor 18. The means 22 are configured to be connected; Heating device of a batch reaction chamber, characterized in that. 2. The heat treatment heater 12 is divided into a plurality of radial zones along the outer circumference of the reaction chamber 1, and a canal heater 14 having a separate application line is installed so as to be replaced separately at each location. The Kanthal heater (14) is a heating device of a batch reaction chamber characterized in that it is installed while reciprocating the upper and lower zones in the corresponding radial zone to cover each divided radial zone. 2. The batch reaction according to claim 1, wherein the heat treatment heater 12 includes a plurality of lamp heaters 16 disposed along an outer circumferential surface of the heating block 5 surrounding the outer circumference of the vertical reaction chamber 1. Chamber heating device.

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