KR100858319B1 - 교류 발광 소자 - Google Patents

교류 발광 소자 Download PDF

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Publication number
KR100858319B1
KR100858319B1 KR1020060041644A KR20060041644A KR100858319B1 KR 100858319 B1 KR100858319 B1 KR 100858319B1 KR 1020060041644 A KR1020060041644 A KR 1020060041644A KR 20060041644 A KR20060041644 A KR 20060041644A KR 100858319 B1 KR100858319 B1 KR 100858319B1
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KR
South Korea
Prior art keywords
light emitting
active layer
alternating current
substrate
alternating
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KR1020060041644A
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Korean (ko)
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KR20060117210A (ko
Inventor
민-더 린
시-슈안 옌
윈-융 예
민-야오 린
성-판 황
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인더스트리얼 테크놀로지 리서치 인스티튜트
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Publication of KR20060117210A publication Critical patent/KR20060117210A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/30—Driver circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/40—Details of LED load circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Devices (AREA)
KR1020060041644A 2005-05-13 2006-05-09 교류 발광 소자 Active KR100858319B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
TW094115514 2005-05-13
TW94115514 2005-05-13
TW095109419A TW200640045A (en) 2005-05-13 2006-03-20 Alternating current light-emitting device
TW095109419 2006-03-20

Publications (2)

Publication Number Publication Date
KR20060117210A KR20060117210A (ko) 2006-11-16
KR100858319B1 true KR100858319B1 (ko) 2008-09-11

Family

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Family Applications (1)

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KR1020060041644A Active KR100858319B1 (ko) 2005-05-13 2006-05-09 교류 발광 소자

Country Status (6)

Country Link
US (1) US7544524B2 (enExample)
JP (2) JP4413884B2 (enExample)
KR (1) KR100858319B1 (enExample)
DE (1) DE102006021648B4 (enExample)
NL (1) NL1031772C2 (enExample)
TW (1) TW200640045A (enExample)

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KR100968843B1 (ko) * 2005-12-16 2010-07-09 서울옵토디바이스주식회사 다수의 발광셀이 어레이된 발광소자
KR20070095041A (ko) * 2006-03-20 2007-09-28 삼성전기주식회사 교류 전압용 발광 소자 유닛
DE102006051745B4 (de) * 2006-09-28 2024-02-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers
KR100843402B1 (ko) * 2007-06-22 2008-07-03 삼성전기주식회사 Ｌｅｄ 구동회로 및 ｌｅｄ 어레이 장치
US20090036801A1 (en) * 2007-08-01 2009-02-05 Yu-Che Chuang Hand-eye coordination test instrument
KR100889956B1 (ko) * 2007-09-27 2009-03-20 서울옵토디바이스주식회사 교류용 발광다이오드
KR100966372B1 (ko) * 2007-11-23 2010-06-28 삼성엘이디 주식회사 모놀리식 발광다이오드 어레이 및 그 제조방법
TWM343922U (en) * 2007-12-14 2008-11-01 Eorex Corp LED matrix structure
TWI416993B (zh) * 2008-05-21 2013-11-21 Interlight Optotech Corp 交流電發光二極體模組及其應用之光源裝置與其製造方法
KR101025972B1 (ko) 2008-06-30 2011-03-30 삼성엘이디 주식회사 교류 구동 발광 장치
KR100981275B1 (ko) * 2008-09-25 2010-09-10 주식회사 에피밸리 3족 질화물 반도체 발광소자
DE102009030549A1 (de) 2009-06-25 2010-12-30 Osram Opto Semiconductors Gmbh Optisches Projektionsgerät
KR101106137B1 (ko) * 2009-09-25 2012-01-20 서울옵토디바이스주식회사 전파 발광셀 및 반파 발광셀을 갖는 교류용 발광 다이오드
KR101163838B1 (ko) 2009-10-19 2012-07-09 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
TWI397989B (zh) * 2009-12-07 2013-06-01 晶元光電股份有限公司 發光二極體陣列
TWI499347B (zh) * 2009-12-31 2015-09-01 晶元光電股份有限公司 發光元件
WO2011115361A2 (ko) 2010-03-15 2011-09-22 서울옵토디바이스주식회사 복수개의 발광셀들을 갖는 발광 장치
KR101649267B1 (ko) * 2010-04-30 2016-08-18 서울바이오시스 주식회사 복수개의 발광셀들을 갖는 발광 다이오드
KR101039609B1 (ko) 2010-05-24 2011-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
CA3025336A1 (en) 2010-09-30 2012-03-30 Philips Lighting Holding B.V. Apparatus and methods for supplying power
CN103022276B (zh) * 2011-09-26 2015-08-26 比亚迪股份有限公司 一种ac led芯片的制备方法
CN104081121A (zh) * 2012-02-02 2014-10-01 普司科Led股份有限公司 散热片以及包含散热片的发光二极管照明装置
JP5684751B2 (ja) 2012-03-23 2015-03-18 株式会社東芝 半導体発光素子及びその製造方法
JP2014007208A (ja) * 2012-06-22 2014-01-16 Nano Material Kenkyusho:Kk 半導体デバイス
US9159652B2 (en) * 2013-02-25 2015-10-13 Stmicroelectronics S.R.L. Electronic device comprising at least a chip enclosed in a package and a corresponding assembly process
CN103137646A (zh) * 2013-03-15 2013-06-05 中国科学院微电子研究所 用于双极型阻变存储器交叉阵列集成方式的选通器件单元
US9748443B2 (en) * 2013-03-18 2017-08-29 Epistar Corporation Light emitting device
TWI577049B (zh) * 2013-03-18 2017-04-01 晶元光電股份有限公司 發光元件
KR102374171B1 (ko) * 2015-04-16 2022-03-15 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 패키지
CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块
US10607515B2 (en) 2018-04-19 2020-03-31 Lg Electronics Inc. Display device using semiconductor light emitting device and method for manufacturing the same
WO2019203404A1 (ko) * 2018-04-19 2019-10-24 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법

Citations (1)

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JPH05198843A (ja) * 1992-01-23 1993-08-06 Toshiba Lighting & Technol Corp 発光ダイオードランプおよび発光ダイオード表示装置

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Also Published As

Publication number Publication date
US7544524B2 (en) 2009-06-09
NL1031772C2 (nl) 2008-05-14
TW200640045A (en) 2006-11-16
US20070080355A1 (en) 2007-04-12
JP2006319333A (ja) 2006-11-24
NL1031772A1 (nl) 2006-11-14
DE102006021648B4 (de) 2021-08-19
TWI304274B (enExample) 2008-12-11
DE102006021648A1 (de) 2006-11-23
KR20060117210A (ko) 2006-11-16
JP4413884B2 (ja) 2010-02-10
JP2009290239A (ja) 2009-12-10

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