KR100819020B1 - Apparatus of treating substrate using plasma - Google Patents

Abstract

A plasma processing apparatus is provided to easily ignite a plasma in a process chamber by applying a DC power to a first coil disposed in an upper portion of the process chamber. A plasma process is performed in a process chamber(200), and a plasma generator(300) applies an electric field to one side of the process chamber to generate the plasma in the process chamber. A plasma ignition part(400) is disposed in the upper portion of the process chamber to ignite the plasma, and has a first coil(410) evenly disposed on the entire surface of the upper portion of the process chamber and a DC power applying part(420) applying a DC power to the first coil. The plasma generator has a second coil(310) enclosing the side of the process chamber, and an RF power applying member(320) applying an RF power to the second coil.

Description

Plasma treatment device {APPARATUS OF TREATING SUBSTRATE USING PLASMA}

1 is a configuration diagram schematically showing a plasma processing apparatus according to an embodiment of the present invention.

2 to 6 are views briefly showing embodiments of the shape of the second coil of FIG. 1.

7 is a schematic view showing a plasma processing apparatus according to another embodiment of the present invention.

FIG. 8 is a circuit diagram for describing an exemplary embodiment of the filter unit illustrated in FIG. 7.

<Description of the symbols for the main parts of the drawings>

100: plasma processing apparatus 200: process chamber

210: substrate support member 220: substrate heating member

300: plasma generating unit 310: second coil

320: high frequency power supply unit 330: matching circuit unit

400: plasma ignition unit 410: first coil

420: DC power supply unit 500: filter unit

The present invention relates to a plasma processing apparatus, and more particularly, to a plasma processing apparatus for performing a process using plasma.

BACKGROUND ART In recent years, the demand for processing apparatuses for etching or film forming has increased due to the large diameter of semiconductor wafers for manufacturing semiconductor devices and the large area of glass substrates for manufacturing flat display devices. For example, the demand for plasma processing apparatuses, such as a plasma etching apparatus, a plasma vapor deposition apparatus, and a plasma ashing apparatus which advances the said etching process and the film-forming process using plasma, is also increasing.

Examples of the plasma source used in such a plasma processing apparatus include a high frequency capacitively coupled plasma source, a micron wave ECR plasma source, a high frequency inductively coupled plasma (hereinafter referred to as "ICP") source, and the like. Each of these is used separately for various treatment processes according to its characteristics.

Among these plasma sources, a plasma processing apparatus having a high frequency ICP source includes a high frequency antenna and a high frequency power source. Accordingly, the plasma can generate a relatively high density plasma under a low pressure of several mTorr by using a high frequency antenna and a high frequency power source, and can easily generate a large plasma by arranging the coil in planar manner with respect to the workpiece. In addition, since the inside of the process chamber is simple, foreign matters generated on the workpiece during processing can be reduced, and thus, it has been widely used in recent years.

Conventional plasma processing apparatus having a high frequency ICP source is composed of a single plasma source. That is, the high frequency antenna connected to the high frequency power supply is a single type installed outside the air chamber. When power is supplied to the high frequency antenna, the gas inside the process chamber is affected by the electromagnetic field formed along the high frequency antenna to form a plasma.

However, currently developed plasma processing apparatuses having a high frequency ICP source generally apply high frequency and relatively high power. Therefore, since the plasma matching range is narrowed, it is difficult to ignite the plasma at one time. Accordingly, a plasma processing apparatus having a high frequency ICP source generates a plasma by applying a low process gas flow and power to ignite the plasma. Thereafter, the process proceeds step by step while increasing the process gas and power to form and stabilize the plasma of the required environment. Therefore, there is a problem in that the overall process time increases and the throughput decreases.

An object of the present invention is to provide a plasma processing apparatus that is easy to plasma ignition by providing a coil to which a direct current power is applied to the upper portion of the process chamber.

Another object of the present invention is to provide a plasma processing apparatus having a filter unit for preventing the occurrence of high frequency noise during plasma ignition.

Plasma processing apparatus according to an embodiment of the present invention for achieving the above object is to generate the plasma inside the process chamber by providing an electric field in one side of the process chamber, the process chamber, the process using the plasma A first coil having a shape that is disposed above the process chamber and uniformly disposed on the entire upper surface of the process chamber to ignite the plasma, and a direct current that applies a DC power supply to the first coil; And a plasma ignition unit having a power supply unit.

According to an embodiment of the present invention, the plasma generation unit includes a second coil disposed to surround the side surface of the process chamber and a high frequency power applying unit for applying high frequency power to the second coil.

According to an embodiment of the present invention, the first coil may have a shape of a spiral, a shape of a disc in which a plurality of radial slits are formed, or a shape of a rectangle.

According to an embodiment of the present invention, the voltage range of the DC power applied to the first coil is 1000 to 2000V.

According to an embodiment of the present invention, the semiconductor device further includes a matching circuit unit disposed between the high frequency power applying unit and the second coil.

According to an embodiment of the present invention, the filter unit may further include a filter disposed between the first coil and the DC power applying unit to remove high frequency noise. The filter unit may be a low-pass filter (LPF), and the low-pass filter may be configured as an OP-AMP.

According to such a plasma apparatus, the plasma may be ignited within a relatively short time in the process chamber, and high frequency noise may be prevented from entering the DC power applying unit.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed subject matter is thorough and complete, and that the scope of the invention to those skilled in the art will fully convey. In the drawings, process chambers, coils, etc., are exaggerated for clarity. The plasma processing apparatus described below can be applied to a thin film lamination apparatus, an etching apparatus for patterning, and the like. In addition, it is obvious that the present invention can be applied to all of the processing apparatuses using plasma in addition to the above-mentioned application examples.

1 is a configuration diagram schematically showing a plasma processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1, a plasma processing apparatus 100 according to an embodiment of the present invention includes a process chamber 200, a plasma generating unit 300, and a plasma ignition unit 400.

The process chamber 200 provides a process space in which a plasma processing process is performed. The process chamber 200 must maintain a vacuum when the organic thin film is deposited. Therefore, the process chamber 200 has a structure that is sealed from the outside, and a member such as a vacuum pump (not shown) is connected to one side thereof.

The process chamber 200 includes a substrate support member 210 and a substrate heating member 220.

The substrate support member 210 includes, for example, an electrostatic chuck (ESC) that adsorbs and supports the substrate W by electrostatic force. Alternatively, the substrate W may be fixed to the substrate support member 210 by a mechanical clamping method. In addition, the substrate support member 210 may include a vacuum chuck of a method of suction-supporting the substrate W by vacuum pressure.

The substrate support member 210 may be operated to be movable in the vertical direction by a driving means (not shown). This allows the substrate support member 210 to be moved in the vertical direction, so that the substrate W placed on the substrate support member 210 can be disposed in a region showing a more uniform plasma distribution.

The substrate heating member 220 is disposed below the substrate support member 210. The substrate heating member 220 heats the substrate W to a predetermined process temperature. The substrate heating member 220 includes various heating means such as a resistance heating element such as a first coil.

The process chamber 200 further includes an exhaust port 230, an exhaust line 240, and an exhaust member 250. For example, the exhaust port 230 is disposed on the bottom surface of the process chamber 200. The exhaust line 240 is connected to the exhaust port 230, the exhaust member 250 is connected to the exhaust line 240. The exhaust member 250 includes an exhaust member such as, for example, a vacuum pump for maintaining the interior of the process chamber 200 in a vacuum state.

The plasma generator 300 generates the plasma in the process chamber 200 by providing an electric field at one side of the process chamber 200. The plasma generating unit 300 includes a second coil 310 disposed to surround the side surface of the process chamber 200 and a high frequency power applying unit 320 for applying high frequency power to the second coil 310.

The second coil 310 is disposed outside the process chamber 200. For example, the second coil 310 is spirally wrapped along the outer surface of the process chamber 200. Unlike this, if the second coil 310 can form a magnetic field in the process space of the process chamber 200, the second coil 310 may be disposed in various forms on the outer surface of the process chamber 200.

When the high frequency power is applied from the high frequency power applying unit 320, the second coil 310 forms a magnetic field in the process space of the process chamber 200 when a current flowing along the first coil of the second coil 310 is applied. The magnetic field forms an induction electric field, and the reaction gas supplied to the process chamber 200 obtains sufficient energy for ionization from the induction electric field to generate a plasma.

The high frequency power applying unit 320 applies high frequency power to the second coil 310. In detail, the high frequency power applying unit 320 applies the high frequency power to the second coil 310 through the matching circuit unit 330 disposed between the second coils 310. As described above, the second coil 310 forms an induction magnetic field for generating plasma by a high frequency power source.

The plasma ignition unit 400 may include a first coil 410 disposed above the process chamber 200 and a DC power applying unit 420 that applies DC power to the first coil 410 to ignite the plasma. Have

The first coil 410 is disposed above the process chamber 200, and the DC power applying unit 420 applies DC power to the first coil 410.

In detail, when the DC power applying unit 420 applies high DC power to the first coil 410 disposed above the process chamber 200, the first coil 410 may have a high gas flow. It is possible to ignite the plasma in a relatively short time corresponding to the power. That is, arc discharge occurs through the first coil 410 due to the high voltage applied from the DC power supply unit 420. Therefore, the plasma can be ignited in the process chamber 200 within a relatively short time through arc discharge. Therefore, the plasma processing apparatus 100 applies a relatively high frequency power to the second coil 310 to generate a plasma so that the first coil 410 does not increase in size in order to reach a desired process condition. ) May be applied to generate a plasma in the process chamber 200.

For example, the voltage range of the DC power supply is 1000 to 2000 V. This is because when the voltage range of the DC power supply is less than 1000, since arc discharge is difficult to occur, plasma is difficult to ignite. In addition, when the DC power applying unit 420 applies a high voltage of 2000 V or more, the cost for the DC power applying unit 420 may be increased or the efficiency may be reduced. Therefore, the voltage range of the DC power applied by the DC power applying unit 420 is preferably 1000 to 2000V. However, the voltage range of the DC power source may vary depending on various process conditions such as the type of the process, the size and type of the process chamber 200, and the process time.

On the other hand, if the first coil 410 is disposed above the process chamber 200 to cause arc discharge, the shape of the first coil 410 may be variously changed. Various shapes of the first coil 410 will be described in detail with reference to FIGS. 2 to 6.

2 to 6 illustrate embodiments of the shape of the first coil of FIG. 1.

As described above, the first coil 410 may have various shapes, and as one example thereof, as illustrated in FIG. 2, the first coil 410 has a spiral shape. As another example, as shown in FIG. 3, the first coil 410 has a wavy shape. As another example, as shown in FIG. 4, the first coil 410 has a shape wound in a quadrangle. For example, the first coil 410 may have a shape of a window. As another example, as shown in FIG. 5, the first coil 410 has a circle shape in the center thereof, and has a shape that is bent in an external direction about the circle. As another example, as shown in FIG. 6, the first coil 410 has a shape of a disc in which a plurality of radial slits are formed.

As mentioned above, the shape of the first coil 410 may be variously changed according to process conditions, and is not limited to the shape of FIGS. 2 to 6. That is, the shape of the first coil 410 has a shape that is uniformly disposed on the entire upper surface of the process chamber 200. This is to allow a uniform arc discharge to occur in the process chamber 200 when a high DC power is applied to the first coil 410.

FIG. 7 is a block diagram schematically illustrating a plasma processing apparatus according to another embodiment of the present invention, and FIG. 8 is a circuit diagram illustrating an embodiment of the filter unit illustrated in FIG. 7. The plasma processing apparatus shown in FIG. 7 is substantially the same except that the filter unit is added, compared to the plasma processing apparatus shown in FIG. 1, and thus, the detailed description thereof will be omitted and only the differences will be described.

7 and 8, the plasma processing apparatus 100 further includes a filter unit 500 disposed between the first coil 410 and the DC power applying unit 420.

The filter unit 500 removes the noise of the DC power applying unit 420. That is, the filter unit 500 filters high frequency noise coming into the DC power supply unit 420 when plasma is generated in the process chamber. Specifically, high frequency power is applied to the second coil 310 from the high frequency power applying unit 320 and high from the DC power applying unit 420 to the first coil 410 disposed above the process chamber 200. When DC power is applied, plasma is generated in the process chamber 200. At this time, the first coil 410 and the DC power supply 420 only serves to ignite the plasma. For example, when plasma is generated, high frequency noise may enter the DC power supply unit 420 from the process chamber 200. Therefore, by arranging the filter unit 500 between the first coil 410 and the DC power applying unit 420, it is possible to prevent the high frequency noise from entering the DC power applying unit 420.

The filter unit 500 includes a low-pass, for example. The low-pass filter includes, for example, an active filter configured using the OP-AMP 510. Specifically, the positive input terminal of the OP-AMP 510 is grounded, and the negative input terminal of the OP-AMP 510 is connected to the input voltage VC through the first resistor R1. In addition, the feedback terminal of the OP-AMP 510 is connected to the negative input terminal by connecting the second resistor R2 and the capacitor C in parallel, and the output terminal of the OP-AMP 510 is connected to the output voltage VO. do. In this case, when the high frequency noise is input, since the output voltage of the OP-AMP 510 becomes 0 V, the high frequency noise is filtered into the DC power supply unit 420.

Alternatively, the low-pass filter can be simply composed of resistors, inductors and capacitors. If the low-pass filter is a passive filter consisting of resistors, inductors and capacitors, which are passive components, various types of low-pass can be designed. However, when the low-pass filter is a passive filter, impedance matching and amplification may not be possible.

In addition, the filter unit 500 may include various filters as long as it can remove high frequency noise. That is, the filter unit 500 may include a band-pass filter, but not a low-pass filter.

Therefore, the plasma processing apparatus 100 may remove the high frequency noise during plasma generation by disposing the filter unit 500 between the first coil 410 and the DC power supply unit 420. Furthermore, overall stability of the plasma processing apparatus 100 may be improved.

According to such a plasma processing apparatus, the plasma processing apparatus includes a first coil disposed above the process chamber and a direct current power applying unit for applying direct current power to the first coil for plasma ignition. Therefore, by applying a DC power supply to the first coil, it is possible to easily generate a plasma within the process chamber in a relatively short time. Therefore, overall process time can be reduced, and furthermore, productivity and efficiency can be greatly improved in the manufacturing process of the semiconductor device using a plasma processing apparatus.

In addition, the plasma processing apparatus further includes a filter unit disposed between the first coil and the DC power supply unit. Accordingly, when the plasma is generated, the filter unit may prevent high frequency noise from entering the DC power supply unit. Therefore, the stability of the semiconductor device including the plasma processing apparatus can be improved.

As described above, although described with reference to preferred embodiments of the present invention, those skilled in the art will be variously modified without departing from the spirit and scope of the invention described in the claims below. And can be changed.

Claims (8)

A process chamber in which a process using plasma is performed; A plasma generator configured to provide an electric field at one side of the process chamber to generate the plasma inside the process chamber; And It is disposed above the process chamber to ignite the plasma, and has a first coil having a shape uniformly disposed on the entire upper surface of the process chamber, and a direct current power applying unit for applying a DC power to the first coil Plasma processing apparatus comprising a plasma ignition unit. The method of claim 1, wherein the plasma generating unit A second coil disposed to surround a side of the process chamber; And And a high frequency power applying unit for applying high frequency power to the second coil. The plasma processing apparatus of claim 1, wherein the first coil has a spiral shape, a disc shape having a plurality of radial slits, or a rectangular shape. 2. The plasma processing apparatus of claim 1, wherein a voltage range of the DC power applied to the first coil is 1000 to 2000 V. 3. The plasma processing apparatus of claim 1, further comprising a matching circuit disposed between the high frequency power applying unit and the second coil. The plasma processing apparatus of claim 1, further comprising a filter unit disposed between the first coil and the DC power applying unit to remove high frequency noise. The plasma processing apparatus of claim 6, wherein the filter unit is a low-pass filter (LPF). 8. The plasma processing device of claim 7, wherein the low-pass filter comprises an OP-AMP.

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