KR100818678B1 - 포토리소그라피용 스핀온 유리 반사 방지 피막 - Google Patents

포토리소그라피용 스핀온 유리 반사 방지 피막 Download PDF

Info

Publication number
KR100818678B1
KR100818678B1 KR1020047007541A KR20047007541A KR100818678B1 KR 100818678 B1 KR100818678 B1 KR 100818678B1 KR 1020047007541 A KR1020047007541 A KR 1020047007541A KR 20047007541 A KR20047007541 A KR 20047007541A KR 100818678 B1 KR100818678 B1 KR 100818678B1
Authority
KR
South Korea
Prior art keywords
siloxane polymer
carboxy
anthracene
triethoxysilane
silane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020047007541A
Other languages
English (en)
Korean (ko)
Other versions
KR20040066822A (ko
Inventor
발드윈-헨-드릭스테레사
케네디조
리키마리
Original Assignee
허니웰 인터내셔널 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 허니웰 인터내셔널 인코포레이티드 filed Critical 허니웰 인터내셔널 인코포레이티드
Publication of KR20040066822A publication Critical patent/KR20040066822A/ko
Application granted granted Critical
Publication of KR100818678B1 publication Critical patent/KR100818678B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/02—Polysilicates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Silicon Polymers (AREA)
  • Paints Or Removers (AREA)
KR1020047007541A 2001-11-16 2001-11-16 포토리소그라피용 스핀온 유리 반사 방지 피막 Expired - Fee Related KR100818678B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2001/043831 WO2003044077A1 (en) 2001-11-16 2001-11-16 Spin-on-glass anti-reflective coatings for photolithography

Publications (2)

Publication Number Publication Date
KR20040066822A KR20040066822A (ko) 2004-07-27
KR100818678B1 true KR100818678B1 (ko) 2008-04-01

Family

ID=21743007

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047007541A Expired - Fee Related KR100818678B1 (ko) 2001-11-16 2001-11-16 포토리소그라피용 스핀온 유리 반사 방지 피막

Country Status (5)

Country Link
US (1) US20090275694A1 (enExample)
EP (1) EP1478681A4 (enExample)
JP (1) JP2005509710A (enExample)
KR (1) KR100818678B1 (enExample)
WO (1) WO2003044077A1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000077575A1 (en) 1999-06-10 2000-12-21 Alliedsignal Inc. Spin-on-glass anti-reflective coatings for photolithography
DE10227807A1 (de) * 2002-06-21 2004-01-22 Honeywell Specialty Chemicals Seelze Gmbh Silylalkylester von Anthracen- und Phenanthrencarbonsäuren
JP4796498B2 (ja) * 2003-05-23 2011-10-19 ダウ コーニング コーポレーション 高い湿式エッチング速度を持つシロキサン樹脂系反射防止被覆組成物
JP2007523959A (ja) * 2003-06-23 2007-08-23 チューリッヒ大学 超疎水性コーティング
US8053159B2 (en) * 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
US8901268B2 (en) 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
JP4541080B2 (ja) * 2004-09-16 2010-09-08 東京応化工業株式会社 反射防止膜形成用組成物およびこれを用いた配線形成方法
DE602005008100D1 (de) 2004-12-17 2008-08-21 Dow Corning Verfahren zur ausbildung einer antireflexionsbeschichtung
EP1846479B1 (en) 2004-12-17 2010-10-27 Dow Corning Corporation Siloxane resin coating
CN101133364B (zh) 2005-03-01 2013-03-20 Jsr株式会社 抗蚀剂下层膜用组合物及其制造方法
CN101371196B (zh) 2006-02-13 2012-07-04 陶氏康宁公司 抗反射涂料
JP2007272168A (ja) * 2006-03-10 2007-10-18 Tokyo Ohka Kogyo Co Ltd レジスト下層膜用組成物及びこれを用いたレジスト下層膜
US9051491B2 (en) * 2006-06-13 2015-06-09 Braggone Oy Carbosilane polymer compositions for anti-reflective coatings
WO2009088600A1 (en) 2008-01-08 2009-07-16 Dow Corning Toray Co., Ltd. Silsesquioxane resins
CN101910253B (zh) 2008-01-15 2013-04-10 陶氏康宁公司 倍半硅氧烷树脂
US8859673B2 (en) 2008-02-25 2014-10-14 Honeywell International, Inc. Processable inorganic and organic polymer formulations, methods of production and uses thereof
JP5581225B2 (ja) 2008-03-04 2014-08-27 ダウ・コーニング・コーポレイション シルセスキオキサン樹脂
CN101970540B (zh) 2008-03-05 2014-07-23 陶氏康宁公司 倍半硅氧烷树脂
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
JP5645113B2 (ja) * 2010-09-10 2014-12-24 株式会社豊田中央研究所 表面に微細な凹凸構造を有するフィルムおよびその製造方法
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
CN103832968B (zh) * 2014-03-17 2016-04-13 上海华虹宏力半导体制造有限公司 Mems器件的制造方法
CN104497034B (zh) * 2014-12-09 2018-04-13 山东大学 一种α‑取代丙烯酰氧基甲基三烷氧基硅烷的制备方法
JP6470079B2 (ja) * 2015-03-16 2019-02-13 株式会社東芝 パターン形成方法
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6268457B1 (en) * 1999-06-10 2001-07-31 Allied Signal, Inc. Spin-on glass anti-reflective coatings for photolithography

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629382B2 (ja) * 1987-04-07 1994-04-20 信越化学工業株式会社 紫外線硬化性ハードコーティング剤
US6040053A (en) * 1996-07-19 2000-03-21 Minnesota Mining And Manufacturing Company Coating composition having anti-reflective and anti-fogging properties
KR100625730B1 (ko) * 1998-09-01 2006-09-20 다이셀 가가꾸 고교 가부시끼가이샤 유기 전자 발광 소자용 재료 및 그의 제조 방법
US6177143B1 (en) * 1999-01-06 2001-01-23 Allied Signal Inc Electron beam treatment of siloxane resins
WO2000077575A1 (en) * 1999-06-10 2000-12-21 Alliedsignal Inc. Spin-on-glass anti-reflective coatings for photolithography

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6268457B1 (en) * 1999-06-10 2001-07-31 Allied Signal, Inc. Spin-on glass anti-reflective coatings for photolithography
KR20020036956A (ko) * 1999-06-10 2002-05-17 크리스 로저 에이취. 포토리소그래피용 ｓｏｇ 반사방지 코팅

Also Published As

Publication number Publication date
EP1478681A1 (en) 2004-11-24
KR20040066822A (ko) 2004-07-27
WO2003044077A1 (en) 2003-05-30
JP2005509710A (ja) 2005-04-14
US20090275694A1 (en) 2009-11-05
EP1478681A4 (en) 2006-10-11

Similar Documents

Publication Publication Date Title
KR100818678B1 (ko) 포토리소그라피용 스핀온 유리 반사 방지 피막
US8344088B2 (en) Spin-on anti-reflective coatings for photolithography
US6824879B2 (en) Spin-on-glass anti-reflective coatings for photolithography
EP1190277B1 (en) Semiconductor having spin-on-glass anti-reflective coatings for photolithography
KR100705849B1 (ko) 포토리소그래피용 ｓｏｇ 반사방지 코팅
JP2005512309A6 (ja) フォトリソグラフィー用スピンオン反射防止膜
JP2011221549A (ja) フォトリソグラフィー用スピンオン反射防止膜
JP2009280822A (ja) フォトリソグラフィ用のスピンオングラス反射防止性コーティング
KR100917241B1 (ko) 포토리소그래피용 스핀-온 무반사 코팅
TW200401794A (en) Spin-on-glass anti-reflective coatings for photolithography
JP2009175747A (ja) フォトリソグラフィー用スピンオン反射防止膜

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20110225

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20120327

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20120327

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000