KR100812216B1 - 웨이퍼 고정용 정전척의 히터전원 로드 연결 장치 - Google Patents
웨이퍼 고정용 정전척의 히터전원 로드 연결 장치 Download PDFInfo
- Publication number
- KR100812216B1 KR100812216B1 KR1020070038230A KR20070038230A KR100812216B1 KR 100812216 B1 KR100812216 B1 KR 100812216B1 KR 1020070038230 A KR1020070038230 A KR 1020070038230A KR 20070038230 A KR20070038230 A KR 20070038230A KR 100812216 B1 KR100812216 B1 KR 100812216B1
- Authority
- KR
- South Korea
- Prior art keywords
- heater
- electrostatic chuck
- wafer
- bush
- connecting member
- Prior art date
Links
- 239000000853 adhesive Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 8
- 230000001070 adhesive effect Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 abstract description 26
- 230000008878 coupling Effects 0.000 abstract description 25
- 238000005859 coupling reaction Methods 0.000 abstract description 25
- 238000007254 oxidation reaction Methods 0.000 abstract description 5
- 239000011247 coating layer Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 39
- 239000007789 gas Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (5)
- 웨이퍼(200)를 고정하는 정전척(500) 몸체와, 상기 정전척(500) 몸체에 내장된 히터(520)와, 상기 히터(520)에 전원이 인가되도록 결합된 연결부재(610)와, 상기 연결부재(610)의 단부에 결합되는 부시(620) 및, 상기 부시(620)의 단부에 결합된 히터 전원로드(630)를 포함하는 것을 특징으로 하는 웨이퍼 고정용 정전척의 히터전원 로드 연결 장치.
- 제1항에 있어서, 상기 연결부재(610)는 상기 정전척(500) 몸체와 열팽창 계수가 동일한 것을 특징으로 하는 웨이퍼 고정용 정전척의 히터전원 로드 연결 장치.
- 제1항에 있어서, 연결부재(610), 부시(620) 및 히터전원 로드(630)는 접착제(700)로 접착되는 것을 특징으로 하는 웨이퍼 고정용 정전척의 히터전원 로드 연결 장치.
- 제1항에 있어서, 상기 연결부재(610), 부시(620) 및 히터전원 로드(630) 연결부의 측 둘레면에는 고팅층(710)이 형성된 것을 특징으로 하는 웨이퍼 고정용 정전척의 히터전원 로드 연결 장치.
- 제1항에 있어서, 상기 부시(620)의 상/하면에는 끼움홈(621)이 형성된 것을 특징으로 하는 웨이퍼 고정용 정전척의 히터전원 로드 연결 장치.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070038230A KR100812216B1 (ko) | 2007-04-19 | 2007-04-19 | 웨이퍼 고정용 정전척의 히터전원 로드 연결 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070038230A KR100812216B1 (ko) | 2007-04-19 | 2007-04-19 | 웨이퍼 고정용 정전척의 히터전원 로드 연결 장치 |
Publications (1)
Publication Number | Publication Date |
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KR100812216B1 true KR100812216B1 (ko) | 2008-03-13 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020070038230A KR100812216B1 (ko) | 2007-04-19 | 2007-04-19 | 웨이퍼 고정용 정전척의 히터전원 로드 연결 장치 |
Country Status (1)
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KR (1) | KR100812216B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101237529B1 (ko) * | 2012-05-31 | 2013-02-26 | (주)씨엠코리아 | 반도체 제조장치용 히터의 표면손상부위 처리방법 및 샤프트 본딩방법 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR940016554A (ko) * | 1992-12-17 | 1994-07-23 | 이노우에 아키라 | 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치 |
KR20060077667A (ko) * | 2004-12-30 | 2006-07-05 | 동부일렉트로닉스 주식회사 | 반도체 웨이퍼의 정전척 |
-
2007
- 2007-04-19 KR KR1020070038230A patent/KR100812216B1/ko active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR940016554A (ko) * | 1992-12-17 | 1994-07-23 | 이노우에 아키라 | 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치 |
KR20060077667A (ko) * | 2004-12-30 | 2006-07-05 | 동부일렉트로닉스 주식회사 | 반도체 웨이퍼의 정전척 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101237529B1 (ko) * | 2012-05-31 | 2013-02-26 | (주)씨엠코리아 | 반도체 제조장치용 히터의 표면손상부위 처리방법 및 샤프트 본딩방법 |
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