KR100784056B1 - Radio frequency accumulated module of one chip type - Google Patents

Abstract

A one chip type RF integrated module is provided to freely design the arrangement of other external modules by implementing a plurality of circuit elements into a single package component so as to minimize installation areas on a substrate. A one chip type RF integrated module comprises one or more RF processing modules(110), one or more power amplification modules, one or more transceiver modules(140), and a low noise amplification module(120). These modules(110-140) are implemented in the form of a single package. The RF processing modules(110) process multi-band Tx/Rx signals. The power amplification modules amplify multi-band Tx signals. The transceiver modules(140) mutually convert and process baseband signals and RF signals. The low noise amplification module(120) performs low noise amplification for multi-band Rx signals. Also the one chip type RF integrated module comprises an isolation module(150) to intercept the propagation interference between the power amplification modules and the low noise amplification module(120).

Description

Win chip type RF integrated module {Radio Frequency accumulated module of one chip type}

1 is a top view illustrating a form in which each component constituting a general RF communication module is mounted on a substrate by way of example.

2 is a circuit diagram schematically showing the components of a one-chip RF integrated module according to an embodiment of the present invention.

Figure 3 is a top view schematically showing the shape of the first substrate layer constituting the one-chip RF integrated module according to an embodiment of the present invention.

Figure 4 is a top view schematically showing the shape of a second substrate layer constituting a one-chip RF integrated module according to an embodiment of the present invention.

5 is a top view schematically showing the shape of a third substrate layer constituting a one-chip RF integrated module according to an embodiment of the present invention.

Figure 6 is a top view schematically showing the shape of a fourth substrate layer constituting a one-chip RF integrated module according to an embodiment of the present invention.

7 is a perspective view illustrating a form in which a one-chip RF integrated module according to an embodiment of the present invention is flip chip bonded on another substrate.

<Explanation of symbols for main parts of drawing>

100: Winchip RF integrated module 110: RF processing module

111-113: 1st duplexer-3rd duplexer

114, 116, 118: 1st Rx filter-3rd Rx filter

115, 117, 119: 1st Tx filter-3rd Tx filter

120: low noise amplification module 121 to 123: first LNA to third LNA

130: power amplifier module 131 ~ 133: 1PA ~ 3PA

140: transceiver module 150: isolation module

The present invention relates to a one-chip RF integrated module.

At present, a mobile communication terminal using a multi-band front-end composite module integrating a transmission / reception terminal processing a plurality of frequency bands into one module is widely used.

The front-end composite module processes multi-band signals such as, for example, Universal Mobile Telecommunications System (UMTS) frequency band, Personal Communication Service (PCS) frequency band, and Data Core Network (CDMA-800) frequency band. The UMTS is a communication method based on the GSM communication standard, which combines terrestrial wireless communication technology and satellite transmission technology to transmit broadband packet-based text, digitized voice or video, and multimedia data at a high speed of 2 Mbps or more. Can be.

In addition, the DCN uses a frequency band of 824 ~ 894MHz, the PCS is a frequency band of 1750 ~ 1910 MHz (Korean PCS (K-PCS) band includes a transmission band of 1750MHz to 1780MHz and a reception band of 1840MHz to 1870MHz) The US PCS (US-PCS) band includes a transmission band of 1850 MHz to 1910 MHz and a reception band of 1930 MHz to 1990 MHz.

1 is a top view exemplarily illustrating a form in which each component constituting a general RF communication module is mounted on a substrate.

As shown in FIG. 1, the RF portion of a typical multi-band mobile communication terminal includes a power amplifier module (PAM) 30, a front end module 10, a matching bank 20, and a matching circuit 20. , 4 blocks of the transceiver (Transmitter & Receiver) terminal 40, each of the four blocks has a structure (Discrete type) is mounted on the internal substrate of the mobile communication terminal as a separate element form.

The FEM 10 is connected to an antenna and transmits and receives a multi-band frequency signal and separates and transmits a transmission signal and a reception signal for each band.

The power amplifier 30 amplifies the transmitted signal processed by the transceiver stage 40 to the FEM 10, the matching circuit stage 20 is the transceiver stage 40 and the FEM 10, and the power amplifier stage ( 30) and the impedance matching between the FEM (10).

The transceiver stage 40 includes a mixer, a phase synchronization circuit, an oscillation circuit, a modulation / demodulation circuit, and the like, and converts / processes an RF signal into a baseband signal or a baseband signal into an RF signal. It is connected to the chip to send and receive signals.

As such, the four blocks 10, 20, 30, and 40 forming the conventional RF part are each manufactured as a single chip, and as shown in FIG. It becomes wider.

For example, the four blocks 10, 20, 30, 40 occupy an area of more than a dozen mm ² when mounted on a substrate, which limits the miniaturization of mobile communication terminal products.

In particular, the recent mobile communication terminal products are also equipped with other modules, such as a camera module, a short-range communication module such as Bluetooth, a Digital Multimedia Broadcasting (DMB) communication module, so that the four block structure described above has its own arrangement This affects not only the design but also the mounting structure of other modules.

In general, a general RF communication module has a structure in which individual elements 10, 20, 30, and 40 are mounted on a multi-layered substrate, and a plurality of individual elements are mounted in a narrow board area in accordance with the miniaturization trend of modules. Radio wave interference is severely generated.

For example, in the case of a power amplifier module and a low noise amplifier module that consumes a lot of power, radio wave interference occurs most severely, which causes an error in the transmission / reception function of the entire RF communication module.

In addition, since radio wave interference occurs between the substrate layers constituting the plurality of layers, signal distortion may occur not only between devices but also between patterns such as transmission patterns, routing patterns, and bonding patterns.

When the signal is distorted in the process of transmitting the signal inside the module, even if a normal signal is received, the baseband terminal or the digital signal processing terminal cannot interpret the signal, and thus there is a problem that the transmission and reception quality of the mobile communication terminal is degraded.

Therefore, in order to develop a multifunctional / miniaturized mobile communication terminal product, structural improvement of the RF communication module may be essential.

The present invention can minimize the mounting area of a mobile communication terminal by implementing circuit elements such as an RF processing module, a power amplification module, a low noise amplification module and a transceiver module that constitute an RF communication module for processing a multi-band signal as a single package element. It provides a one-chip RF integrated module.

In addition, the present invention in the integration of the RF communication module on a multi-layered substrate, the arrangement to ensure the optimal isolation between the circuit elements and patterns between one layer or another layer, and to minimize the mutual influence when transmitting and receiving It provides a design structure and a one-chip RF integrated module accordingly.

One-chip RF integrated module according to the present invention comprises one or more RF processing module for processing a multi-band transmission and reception signal; One or more power amplifier modules for amplifying a multi-band transmission signal; At least one transceiver module for converting a multi-band transmit / receive signal into a baseband signal and an RF signal to be processed; And an isolation module configured to form a single package including a low noise amplifier module for low noise amplification of a multi-band received signal, and to block radio interference between the power amplifier module and the low noise amplifier module.

In addition, the isolation module of the one-chip RF integrated module according to the present invention is provided with a finger strip.

In addition, the one-chip RF integrated module according to the present invention includes a first substrate layer on which the RF processing module, the power amplifier module, the transceiver module, the low noise amplifier module and the isolation module are mounted; A second substrate layer and a third substrate layer on which a pattern including a ground pattern and a transmission path pattern is formed; And a fourth substrate layer having a ground pattern and a ball grid array (BGA) pattern formed thereon.

In addition, the transmission path pattern of the second substrate layer and the transmission path pattern of the third substrate layer included in the one-chip RF integrated module according to the present invention may have a corresponding transmission path pattern when the substrate layer is vertically projected. It is formed not parallel.

Hereinafter, an RF integrated module according to an exemplary embodiment of the present invention will be described in detail with reference to the accompanying drawings.

2 is a circuit diagram schematically showing the components of a one-chip RF integrated module 100 according to an embodiment of the present invention.

2, the one-chip RF integrated module 100 according to the embodiment of the present invention largely includes an RF processing module 110, a power amplifier module 130, a low noise amplifier module 120 and a transceiver module 140. RF processing module 110 includes three duplexers (111, 112, 113), three Rx filters (114, 116, 118), three Tx filters (115, 117, 119), and low noise The amplification module 120 includes three Low Noise Amplifiers (LNAs) 121, 122, and 123.

In addition, the power amplifier module 130 includes three power amplifiers (131, 132, 133), the transceiver module 140 is the IF amplifier stage 141, the first mixer 142, the demodulator 143 ), A first locked loop (144), a voltage controlled oscillator (VCO) 145, a second PLL 146, a second mixer 147, a modulator 148, and a power detection circuit 149. do.

The RF processing module 110, power amplification module 130, low noise amplification module 120 and transceiver module 140 is implemented on a multi-layered substrate such as a metal core printed circuit board (MCPCB), for example, the top layer The layer may be mounted and electrically connected to the inner layer through a via hole.

For example, an electro-static discharge (ESD) device and a temper-compensated X-tal oscillator (TCXO), which suppress electrostatic discharge from occurring due to parasitic components present in an RF integrated module circuit, may be formed on an inner layer of a multilayer substrate. A circuit, a distribution element such as a microstrip line, and the like may be located, and the RF processing module 110, the power amplification module 130, the low noise amplification module 120, and the transceiver module 140 of the top layer layer may have electrical signals between layers. Through the via hole for transmitting the inner layer may be electrically connected to other electronic devices (mobile communication terminal may be provided with a plurality of electronic devices and not shown for the electronic device not related to the technical idea of the present invention).

In addition, the RF integrated module 100 according to the embodiment of the present invention is mounted on a multi-layered substrate as described above and packaged in a single chip form, and uses a universal mobile telecommunications system (UMTS) using a frequency of about 2.1 GHz band. W-CDMA, PCS (Personal Communication Service) using a frequency of about 1.9 GHz band, and DCN (Data Core Network; CDMA-800) using a frequency of about 800 MHz band. .

Therefore, the RF processing module 110, the power amplifier module 130, the low noise amplifier module 120 and the transceiver module 140 is composed of circuits for processing the UMTS, PCS, DCN frequency band signals, respectively.

The multilayer structure substrate of the RF integrated module 100 according to the embodiment of the present invention will be described in detail below with reference to FIGS. 3 to 6.

Referring to FIG. 2, the components forming the one-chip RF integrated module 100 according to an exemplary embodiment of the present invention will be described. Referring to FIG. 3, each component is mounted on a top layer layer (first substrate layer). Will be described together.

3 is a top view schematically illustrating the shape of the first substrate layer A constituting the one-chip RF integrated module 100 according to an embodiment of the present invention.

According to the first substrate layer A shown in FIG. 3, the power amplification module 130 is mounted on the left end of the substrate layer, and the power amplification module 130 is divided into two regions.

The upper mounting area of the power amplification module 130 is an area in which the first PA 131 and the second PA 132 are mounted. The first PA 131 processes a DCN signal, and the second PA 132 is a PCS signal. To process

The lower mounting area of the power amplification module 130 is an area in which the third PA 133 is mounted, and the third PA 133 processes the UMTS signal.

In addition, an RF processing module 110 is mounted on the right side of the power amplification module 130, that is, an upper right side of the substrate, and a transceiver module 140 is mounted thereunder, underneath the power amplification module 130. The low noise amplification module 120 is mounted in the region of.

That is, the low noise amplification module 120 may be mounted over the lower two areas of the power amplification module 130 and the transceiver module 140 or in any one area.

The circuit arrangement design considering the isolation between the components is a very important factor in improving the transmission and reception function, and in particular, the isolation of the low noise amplification module 120 and the power amplification module 130 with relatively high power consumption is the most important factor. .

For this reason, the one-chip RF integrated module 100 according to the present invention includes an isolation module 150 (see FIG. 3) between the low noise amplification module 120 and the power amplification module 130 and is generated between two modules. In order to suppress radio interference, the isolation module 150 is a metal partition structure and is grounded with a ground pattern of an inner layer through a via hole.

The isolation module 150 may be implemented in various forms, but in the embodiment of the present invention, the isolation module 150 is implemented as a finger strip.

In addition, although the isolation module 150 shown in FIG. 3 is formed in the mounting area where the interference effect is greatest, it is a matter of course that any part causing interference among the substrate circuits of the RF integrated module 100 may be applied. .

First, the RF processing module 110 will be described.

The duplexers 111, 112, and 113 are connected to the switch 300 to separate a transmission / reception signal of each frequency band, and the first duplexer 111 processes the DCN signal and the second duplexer 112. Processes the PCS signal, and the third duplexer 113 processes the UMTS signal.

The duplexers 111, 112, and 113 are composed of a high pass filter (HPF) and a low pass filter (LPF) composed of high performance passive elements (IPDs), and by applying a frequency division multiplexing scheme. Split the entire signal (multiple frequency signals simultaneously) into two frequency bands where the frequency spectrum does not overlap.

The switch 300 connected to the duplexers 111, 112, and 113 and the antenna 200 selectively opens and closes a signal path to separate frequency band signals of DCN, PCS, and UMTS, and includes a decoder circuit, a switching circuit, and a plurality of switches. And a control voltage stage.

For example, when a control voltage is applied through the control voltage terminal, the decoder circuit analyzes the signal path through a combination (logical operation) of the applied control voltages and transfers the analysis result to the switching circuit.

The low noise amplification module 120 and the power amplification module 130 are connected between the duplexer (111, 112, 113) stage and the filter 114 to 119 stage, the low noise amplification module 120 as described above is a three-band signal It consists of three LNA (121, 122, 123) for processing, and the power amplifier module 130 is also composed of three PA (131, 132, 133) for processing three band signals.

Usually, the power of the radio wave received at the RF receiver has a very low power level due to the effects of attenuation and noise, so the LNAs 121, 122, and 123 amplify the received signal, and the received signal contains external noise. Therefore, the received signal is amplified while suppressing noise components as much as possible. In other words, an important part of determining the noise figure of a communication system is the noise figure of the early block of the system, since the overall noise figure is greatly improved when the early block has a small noise figure and a high gain. Therefore, the LNAs 121, 122, and 123 are designed by grabbing the operating point and the matching point so that the noise figure has a small value.

The power amplification module 130 is composed of low frequency / high frequency amplification elements, and amplifies the transmission signal transmitted from the three Tx filters 115, 117, and 119 and outputs the amplified signal to the duplexers 111, 112, and 113. To pass.

For example, the amplifying device may be provided as a driving amplifier, a power amplifier, etc., the driving amplifier by adjusting the gain (gain) of the transmission signal in the bandwidth of the channel signal in which the amplified signal is distorted and concentrated several frequencies Intermodulation can be prevented from occurring.

In addition, the power amplifier amplifies the power of the gain-adjusted signal in the drive amplifier, and amplifies the signal in accordance with the transmission level set for each frequency band. Therefore, the power amplifier includes a large-capacity transistor or a plurality of transistors configured in parallel, and amplifies the output of the RF signal to the maximum in a range that meets communication standards such as ACPR (Adjacent Channel Power Ratio).

The Rx filters 114, 116, and 118 connected to the power amplification module 130 filter only signals of a desired frequency band among the received received signals, and the Tx filters 115, 117, and 119 are separated from the transceiver module 140. The transmitted transmission signal is filtered (the transceiver module 140 converts a transmission signal in a digital state into an analog signal, at which time a signal of an unwanted component may be introduced).

The Rx filters 114, 116, and 118 and the Tx filters 115, 117, and 119 are provided as a saw (SAW) filter and block signals of adjacent band signals and noise components and filter only signals of corresponding frequency bands.

Saw filter is a filter that converts an electrical signal to a piezoelectric object at the input and converts it into a mechanical signal, and then converts the mechanical signal back to an electrical signal at the output and passes the specific frequency band set in the design, and blocks other frequency bands. . Since the saw filter has a high impedance circuit for output matching networks, it has an excellent effect of blocking other frequency bands, and is manufactured in a photographic method, thereby making it possible to miniaturize and thin.

Next, the transceiver module 140 will be described.

The first mixer 142 mixes an RF reception signal of a multi band band into an intermediate frequency signal, and the second mixer 147 mixes an intermediate frequency signal of a multi band band into an RF transmission signal.

The VCO 145 provides a reference frequency signal to the first mixer 142 and the second mixer 147, and the reference frequency signal is used to synthesize an intermediate frequency signal and an RF transmission signal.

However, a reference frequency signal may be minutely flowed to become unstable due to a change factor of an external environment such as temperature, and in this case, distortion may occur in the synthesized signal.

For this reason, in order to stabilize the reference frequency signal of the VCO 145, TCXO (TCXO is not included in the RF integrated module mounted on the top layer) and PLL (144, 146) is provided, PLL (144, 146) is provided The reference frequency signal provided from the VCO 145 is detected, compared with the oscillation frequency signal provided from the TCXO, and a control signal corresponding to the frequency difference is generated and output to the VCO 145.

The first PLL 144 performs a phase synchronous operation for the first mixer 142, and the second PLL 146 performs a phase synchronous operation for the second mixer 147.

Therefore, when the reference frequency signal flows, the first PLL 144 and the second PLL 146 detect this and generate / transfer a control signal, so that the VCO 145 can maintain a stable output of the reference frequency according to the control signal. .

The demodulator 143 demodulates an intermediate frequency signal and converts the intermediate frequency signal into a digital signal that can be processed by a baseband unit (the baseband unit is also located outside the RF integrated module and connected to the transceiver module 140). 148 modulates the digital signal processed by the baseband unit into an intermediate frequency signal.

The demodulator 143 and the modulator 148 may include an analog / digital signal converter, a fast fourier transform (FFT) circuit, a low pass filter (LPF), an error correction circuit, and the like.

The power detection circuit 149 may be provided with a device such as a HDET (hyper detector), and periodically detects the amount of power (power on the second mixer) of the transmission signal and transmits it to the modulator 148.

Accordingly, the modulator 148 may calculate a change in the amount of transmission power, and determine whether to adjust the transmission power level based on preset power level information.

The modulator 148 generates a control signal according to the determination and transmits the control signal to the power amplification module 130 through the power detection circuit 149. The power amplification module 130 amplifies the transmission signal to a predetermined value according to the control signal.

As described above, the RF processing module 110, the power amplification module 130, the low noise amplification module 120 and the transceiver module 140 are serially different from the structure mounted on the substrate in the state of the individual device chip as in the prior art. It can be implemented in a single package chip by modularizing and molding the circuit of.

Hereinafter, the isolation module 150 will be described in more detail.

The isolation module 150 may form a line-shaped bulkhead structure made of a metal material, or a unit block may be arranged in a line shape to form a bulkhead structure. The height of the isolation module 150 is higher than that of the low noise amplification module 120 and the power amplification module 130. It is preferably formed.

In addition, as shown in FIG. 3, the isolation module 150 has a linear structure in which a plurality of bends are bent according to the mounting structure of the power amplifier module 130 and the low noise amplifier module 120.

In an embodiment of the present invention, the isolation module 150 has a partition structure in which unit blocks are arranged.

In general, the surface mounting technology (SMT) process includes devices such as a substrate loader, a screen printer, a pick & placer, a reflow / solder, a cleaner, and the like. Surface mount.

The isolation module 150 may be formed of a plurality of metal blocks, and the metal block may be formed by a surface mounting process.

The metal block is made of a metallic material in order to suppress radio wave interference and thermal interference between the power amplifier module 130 and the low noise amplifier module 120, for example, a conductive material such as copper is electroplated on the ceramic body After the nickel having a high susceptibility is electroplated, the surface may be fabricated by SMT terminal plating.

In this case, the metal block is preferably sized based on the electronic specifications of the electronic components in consideration of the gap arrangement problem in the process to maximize the interference suppression effect.

For example, the metal block may be manufactured as "0.6 / 0.3 (unit: mm)" or "0.4 / 0.2 (unit: mm)" according to the chip size standard.

Therefore, while the mechanical separation space of about 2 mm was required in the related art, the isolation module can be formed with a space of at least 0.2 mm and up to 0.6 mm by using the metal block according to the present invention, and a single packaged substrate is provided. The size can be further reduced.

4 is a top view schematically showing the shape of the second substrate layer B constituting the one-chip RF integrated module 100 according to the embodiment of the present invention, and FIG. 5 is the one-chip type according to the embodiment of the present invention. 3 is a top view schematically illustrating the shape of the third substrate layer C constituting the RF integrated module 100.

4 and 5, the second substrate layer B and the third substrate layer C are formed by stacking a copper foil layer on a dielectric layer and etching part of the copper foil layer to form transmission path patterns C2 and B3. The ground patterns C1 and B1 are formed in regions other than the transmission path patterns C2 and B3.

In addition, via holes C3 and B2 are formed to be electrically connected to other substrate layers on the upper and lower sides.

In this case, when the substrate layer is vertically projected from above, the transmission path pattern B3 formed on the second substrate layer B and the transmission path pattern C2 of the third substrate layer C corresponding thereto are parallel to each other. It is arranged so that it does not overlap.

This is because when the transmission line pattern B3 of the second substrate layer B and the transmission line pattern C2 of the third substrate layer C overlap in parallel, an interference phenomenon may occur between the transmitted signals. This is because it causes distortion of the signal.

That is, the transmission path pattern B3 of the second substrate layer B and the transmission path pattern C2 of the third substrate layer C are arranged as vertically as possible so as to minimize the overlapping portion.

6 is a top view schematically illustrating a shape of a fourth substrate layer D constituting the one-chip RF integrated module 100 according to an exemplary embodiment of the present invention.

In the fourth substrate layer D illustrated in FIG. 6, a ground pattern D1 and a ball grid array (BGA) pattern D2 are formed, and terminal pins are formed on the bottom surface of the chip package through the BGA pattern D2. In addition to the conventional wire bonding method, it may be mounted on another external substrate by flip chip bumping. Thus, through the BGA pattern (D2) the substrate size of the RF integrated module 100 according to the present invention can be further reduced.

The BGA pattern D2 is electrically connected to the third substrate layer C, the second substrate layer B, and the first substrate layer A through via holes.

FIG. 7 is a perspective view exemplarily illustrating a form in which the one-chip RF integrated module 100 according to an embodiment of the present invention is flip chip bonded onto another substrate.

Referring to FIG. 7, the one-chip RF integrated module 100 according to the present invention is flip chip bonded to another external substrate, for example, a main substrate of a mobile communication terminal. The BGA pattern D2 is bumped through a flip chip bonding machine.

Here, bumping is a material such as a metal member or solder member such as gold on an aluminum pad on a semiconductor wafer. Refers to the process of forming (D3)).

Thus, according to the present invention, first, each component is formed as a single package by forming a series of circuits on a single substrate rather than being mounted as individual elements, and second, layout design by minimizing the overlapping area of the pattern formed on each substrate layer By removing a plurality of ground substrate layers, and thirdly, forming a BGA pattern on the fourth substrate layer and mounting the flip chip bumping method, thereby removing the SMT pattern, the bonding pattern, and the like. The size of can be minimized.

Although the present invention has been described above with reference to the embodiments, these are only examples and are not intended to limit the present invention, and those skilled in the art to which the present invention pertains may have an abnormality within the scope not departing from the essential characteristics of the present invention. It will be appreciated that various modifications and applications are not illustrated. For example, each component specifically shown in the embodiment of the present invention can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

According to the one-chip RF integrated module according to the present invention, since a plurality of circuit elements can be implemented as a single package device, the mounting area on the substrate can be minimized, thereby allowing freedom in layout design of other external modules and reducing the device mounting process. As a result, there is an effect of reducing defects and increasing productivity.

In addition, according to the present invention, in the integration of the RF communication module, by introducing a barrier rib structure between circuit elements and improving the pattern structure, the signal interference phenomenon can be suppressed, and the integrated module can be implemented with a minimum number of substrate layers, thereby reducing the production cost. You can save.

Claims (11)

At least one RF processing module for processing a multi-band transmit / receive signal; One or more power amplifier modules for amplifying a multi-band transmission signal; At least one transceiver module for converting a multi-band transmit / receive signal into a baseband signal and an RF signal to be processed; And a low noise amplification module for low noise amplifying a multi-band received signal. One-chip RF integrated module comprising an isolation module for blocking the radio interference between the power amplifier module and the low noise amplifier module. The method of claim 1, wherein the isolation module One-chip RF integrated module, characterized in that provided as a finger strip (Finger strip). The method of claim 1, The power amplifier module is mounted on one end of the substrate, The RF processing module and the transceiver module are mounted on the other end of the substrate to face the power amplifier module, The low noise amplifier module is mounted in an area below the power amplifier module, The isolation module is a one-chip RF integrated module, characterized in that formed between the power amplifier module and the low noise amplifier module. The method of claim 1, wherein the isolation module A one-chip RF integrated module, which is a metal barrier structure and is grounded with a ground pattern of an inner layer through a via hole. The method of claim 1, wherein the isolation module One-chip RF integrated module, characterized in that formed higher than one or more modules of the low noise amplification module and the power amplifier module. The method of claim 1, wherein the isolation module A one-chip RF integrated module comprising a line-shaped bulkhead structure made of metal or a unit block of metal material arranged in a line to form a bulkhead structure. The method of claim 1, wherein the isolation module The one-chip RF integrated module, characterized in that the line-shaped structure is bent aberration according to the mounting structure of the power amplifier module and the low noise amplifier module. The method of claim 1, A first substrate layer on which the RF processing module, the power amplifier module, the transceiver module, the low noise amplifier module and the isolation module are mounted; A second substrate layer and a third substrate layer on which a pattern including a ground pattern and a transmission path pattern is formed; And A one-chip RF integrated module implemented on a multi-layered substrate including a fourth substrate layer on which a ground pattern and a ball grid array (BGA) pattern are formed. The method of claim 8, The one-chip RF integrated module is characterized in that the transmission path pattern of the second substrate layer and the transmission path pattern of the third substrate layer are formed such that respective transmission path patterns are not parallel when the substrate layer is vertically projected. . The method of claim 8, wherein the BGA pattern The one-chip RF integrated module of claim 1, wherein the first substrate layer, the second substrate layer, and the third substrate layer are electrically connected to one or more substrate layers through via holes. The method of claim 8, wherein the fourth substrate layer One-chip RF integrated module, characterized in that the flip chip bonding to the external substrate through the BGA pattern.

Images