KR20080018759A - Radio frequency accumulated module of one chip type - Google Patents

Abstract

A radio frequency accumulated module of a one chip type is provided to reduce a size of a substrate by improving a structure of a choke coil of a power amplifying stage. A radio frequency accumulated module of a one chip type includes a front end module, a power amplifying module, a transceiver module, and a matching circuit module. The front end module divides multi-band signals into transmitting signals and receiving signals to filter the divided signals. The power amplifying module amplifies receiving signals from the transceiver module to transmit the amplified receiving signals to the front end module. The transceiver module converts baseband signals and RF signals into each other. The matching circuit module matches impedance between the transceiver module and the front end module. A choke coil(A) of the power amplifying module has a first inductor unit and a second inductor unit. The first inductor unit is composed of metal lines. The second inductor unit is a bonding element connected to the first inductor unit.

Description

Win chip type RF integrated module {Radio Frequency accumulated module of one chip type}

1 is a top view exemplarily illustrating a form in which a general GSM composite module is mounted on a board;

Figure 2 is a circuit block diagram schematically showing the components of the win chip-type RF integrated module according to an embodiment of the present invention.

3 is a top view exemplarily illustrating a form in which a component of a one-chip RF integrated module according to an embodiment of the present invention forms a single package on a substrate.

Figure 4 is a top view showing the shape of the first choke coil of the one-chip RF integrated module according to the first embodiment of the present invention.

5 is a top view showing the shape of a second choke coil of the one-chip RF integrated module according to the first embodiment of the present invention.

Figure 6 is a top view showing the shape of the first choke coil of the one-chip RF integrated module according to a second embodiment of the present invention.

FIG. 7 is a top view illustrating the shape of a first choke coil of the one-chip RF integrated module 100 according to the third embodiment of the present invention.

Figure 8 is a top view showing the shape of the second choke coil of the one-chip RF integrated module according to a second embodiment of the present invention.

<Explanation of symbols for main parts of drawing>

100: one-chip RF integrated module 110: front-end module

120: matching circuit module 130: power amplification module

140: transceiver module A: first choke coil

B: second choke coil

d1: first metal layer line of the first choke coil according to the first embodiment

a: second metal layer line of the first choke coil according to the first embodiment

f: first metal layer line of the second choke coil according to the first embodiment

C: second metal layer line of the second choke coil according to the first embodiment

d2: first metal layer line of the first choke coil according to the second embodiment

e: second metal layer line of the first choke coil according to the second embodiment

j1: bonding element of the first choke coil according to the second embodiment

d3: first metal layer line of the first choke coil according to the third embodiment

j2: bonding element of the first choke coil according to the third embodiment

f2: first metal layer line of the second choke coil according to the second embodiment

g: second metal layer line of the second choke coil according to the second embodiment

j3: bonding element of the second choke coil according to the second embodiment

The present invention relates to a win chip type RF integrated module.

At present, a mobile communication terminal using a multi-band front-end composite module integrating a transmission / reception terminal processing a plurality of frequency bands into one module is widely used.

Such front-end composite modules can process multi-band signals such as, for example, the Global Systems for Mobile communication (GSM) frequency band, the Digital Cellular System (DCS) frequency band, and the Personal Communication Service (PCS) frequency band. Let's take a quick look at.

First, the GSM is widely used in other regions including Europe, and means a digital mobile communication system using a time division multiple access (TDMA) scheme.

In addition, the DCS is a technology for connecting to a call center and providing a communication service through a code division multiple access (CDMA) method or a time division multiple access (TDMA) method. Is a frequency signal of 1750 to 1910 MHz (Korean PCS (K-PCS) band includes a transmission band of 1750 MHz to 1780 MHz and a reception band of 1840 MHz to 1870 MHz, and the US PCS (US-PCS) band is of 1850 MHz to 1910 MHz). Band and a reception band of 1930 MHz to 1990 MHz).

1 is a top view exemplarily illustrating a form in which a general GSM composite module is mounted on a board.

As shown in FIG. 1, the RF portion of a typical GSM mobile communication terminal includes a power amplifier module (PAM) 30, a front end module (FEM) 10, a matching bank 20, It consists of four blocks of a transceiver (Transmitter & Receiver) terminal 40, and the four blocks have a structure (Discrete type) that is mounted on the internal substrate of the mobile communication terminal as a separate element type.

The FEM 10 is connected to an antenna and transmits and receives a multi-band frequency signal and separates and transmits a transmission signal and a reception signal for each band.

The power amplifier 30 amplifies the transmitted signal processed by the transceiver stage 40 to the FEM 10, the matching circuit stage 20 is the transceiver stage 40 and the FEM 10, and the power amplifier stage ( 30) and the impedance matching between the FEM (10).

The transceiver stage 40 includes a mixer, a phase synchronization circuit, an oscillation circuit, a modulation / demodulation circuit, and the like, and converts / processes an RF signal into a baseband signal or a baseband signal into an RF signal. It is connected to the chip to send and receive signals.

As such, the four blocks 10, 20, 30, and 40 forming the conventional RF part are each manufactured as a single chip, and as shown in FIG. It becomes wider.

For example, since the four blocks 10, 20, 30, and 40 occupy an area of more than a dozen mm ² when mounted on a substrate, this is recognized as a large limitation in miniaturizing a mobile communication terminal product.

Recently, the mobile communication terminal products have been equipped with other modules such as a camera module, a short distance communication module such as Bluetooth, and a digital multimedia broadcasting (DMB) communication module. It also affects the implementation of other modules.

Typically, the power stage of the power amplifier stage 30 is provided with a choke coil 35, for example, it can be composed of two choke coils, one choke coil for a power amplifier circuit for processing a frequency signal of about 1 GHz band The other choke coil can be used for a power amplifier circuit for processing frequency signals in the about 2 GHz band.

As shown in FIG. 1, when the choke coil 35 maintains a predetermined inductance value using only a single component, a large, large capacity, and expensive component is required. Will also increase.

In addition, when the choke coil maintains a predetermined inductance value using only the microstrip line (not shown when implemented as a microstrip line), the length of the microstrip line should be formed to be considerably long and twisted several times. It is difficult to arrange the inner layer such as being disposed.

In addition, due to the area occupied by the microstrip line, it is difficult to dispose other components, via holes, patterns, and the like, thereby limiting the size of the substrate.

Therefore, it can be said that structural improvement of the RF composite module is essential to develop a multifunctional / miniaturized mobile communication terminal product.

The present invention is to integrate the RF communication module for processing a multi-band signal including a GSM band, the integrated device by implementing the FEM, matching circuit stage, transceiver stage and power amplifier stage that is conventionally mounted in the form of individual elements in one package element It provides a one-chip RF integrated module which minimizes the mounting area of the circuit board and minimizes the electrical interference phenomenon in consideration of the arrangement structure of each component.

In addition, the present invention provides an RF integrated module that can further reduce the size of the substrate by improving the structure of the choke coil provided in the power amplifier stage.

One-chip RF integrated module according to the present invention comprises a front-end module for separating and filtering the transmission and reception signals of the multi-band band; A power amplification module for amplifying a transmission signal and transferring the signal to the front end module; A transceiver module for converting and processing a baseband signal and an RF signal; And a matching circuit module configured to match impedances between the transceiver module and the front-end module, the first inductor unit being formed on a single substrate, wherein the choke coil of the power amplification module is formed of a metal line. And a second inductor unit provided as a bonding element connected to the first inductor unit.

In addition, the first inductor portion of the one-chip RF integrated module according to the present invention; And a second metal line spaced apart from the first metal line, wherein the bonding element electrically connects the first metal line and the second metal line.

In addition, the bonding element of the one-chip RF integrated module according to the present invention is provided with at least one, is located on one or more separated first metal line or second metal line to connect the separated metal line.

In addition, the first metal line of the one-chip RF integrated module according to the present invention is formed in the first metal layer, the second metal line is formed in the second metal layer.

In addition, the choke coil of the one-chip RF integrated module according to the present invention combines the length of the metal line and the length of the bonding element to maintain a predetermined impedance value.

Hereinafter, a one-chip RF integrated module according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

2 is a circuit block diagram schematically showing the components of the winchip RF integrated module 100 according to an embodiment of the present invention.

Referring to FIG. 2, the one-chip RF integrated module 100 according to the embodiment of the present invention includes a front end module 110, a matching circuit module 120, a power amplification module 130, and a transceiver module 140. The front-end module 110 includes a duplexer (DPX; DuPleXer) 112, an antenna switching module (ASM) 114, and a filter stage 116, and the matching circuit module 120 includes a first circuit. The matching circuit module 122 and the second matching circuit module 124 is included.

In addition, the transceiver module 140 may include an intermediate frequency (IF) amplifier 141, a first mixer 142, a demodulator 143, a first phase locked loop (144), a second PLL (146), and a VCO. (Voltage Controlled Oscillator) 145, a second mixer 147, a modulator 148 and a power detection circuit 149.

The front end module 110, the matching circuit module 120, the power amplification module 130 and the transceiver module 140 is implemented on a multi-layered substrate, such as a metal core printed circuit board (MCPCB), It may be mounted on the top layer and electrically connected to the inner layer through via holes.

For example, in the inner layer of the multilayer structure substrate, an ESD (Electro-Static Discharge) device which suppresses the occurrence of electrostatic discharge due to parasitic components present in the RF integrated module circuit, a Temperature Compensated X-tal Oscillator (TCXO) circuit, A distribution element such as a microstrip line may be located, and the front end module 110, the matching circuit module 120, the power amplification module 130, and the transceiver module 140 of the top layer layer may transmit electrical signals between layers. The via hole may be electrically connected to other electronic devices in the inner layer (a mobile communication terminal may be provided with a plurality of electronic devices and not illustrated for the electronic devices not related to the technical spirit of the present invention).

In addition, the RF integrated module 100 according to an embodiment of the present invention is mounted on a multi-layered substrate as described above, packaged in a one-chip form, and is a GSM (Global Systems for Mobile communication) transmission / reception composite module. It is supposed to process triple band frequency band signals of Personal Communications Service (1900 MHz band), GSM (Global Position System; 800 MHz band), and DCS (Digital Cellular System; 1800 MHz band).

Accordingly, the front end module 110, the power amplification module 130, the matching circuit module 120 and the transceiver module 140 is composed of circuits for processing PCS, GSM, DCS frequency band signals, respectively.

3 is a top view exemplarily illustrating a configuration in which the components 110, 120, 130, and 140 of the one-chip RF integrated module 100 according to an embodiment of the present invention form a single package on a substrate.

Hereinafter, referring to FIG. 2, the components provided in the one-chip RF integrated module 100 according to an exemplary embodiment of the present invention will be described with reference to FIG. 3. .

First, the duplexer 112 is connected to the antenna 200 and performs a function of separating transmission and reception signals of each frequency band. A high pass filter (HPF) and a low band composed of a high performance passive device (IPD) A low pass filter (LPF) may be used, and a frequency division multiplexing scheme may be used to separate an entire signal (multiple frequency signals mixed at the same time) into two frequency bands in which the frequency spectrum does not overlap.

The ASM 114 is connected to the duplexer 112 and the filter stage 116 and performs a switching operation to separate the frequency band signal of the PCS, GSM, DCS, including a decoder circuit, a switching circuit and a plurality of control voltage stages. do.

For example, when a control voltage is applied through the control voltage terminal, the decoder circuit analyzes the signal path through a combination (logical operation) of the applied control voltages and transfers the analysis result to the switching circuit.

The switching circuit selectively switches the duplexer 112 and the filter stage 116 according to the frequency band by opening and closing a plurality of signal paths under the control of the decoder circuit.

The filter stage 116 is composed of a plurality of filters, such as a saw filter, and cuts out signals of adjacent band signals and noise components, filters only signals of corresponding frequency bands, and delivers them to the matching circuit module 120.

Saw filter is a filter that converts an electrical signal to a piezoelectric object at the input and converts it into a mechanical signal, and then converts the mechanical signal back to an electrical signal at the output and passes the specific frequency band set in the design, and blocks other frequency bands. .

The power amplifier module 130 is mounted on the left end of the top layer, as shown in Figure 3, the front end module 110 including a duplexer 112, ASM 114, filter stage 116 is It is mounted in the right region of the power amplifier module 130.

The matching circuit module 120 is positioned in the right region of the front end module 110, and the transceiver module 140 is mounted in the right region of the matching circuit module 120, that is, at the right end of the top layer.

The power amplification module 130 is composed of low frequency / high frequency amplification elements for processing a multi-band signal including a GSM signal. The power amplification module 130 is connected to the front end module 110 through a second matching circuit module 124 and is a transceiver module. Connected with 140.

The power amplification module 130 amplifies the transmission signal input from the transceiver module 140 and transfers the amplified signal to the front end module 110.

For example, the amplifying device may be provided as a driving amplifier, a power amplifier, etc. The driving amplifier receives the signal from the transceiver module 140 to adjust the gain (gain) so that the output signal exceeds the allowable level Amplify it.

Accordingly, it is possible to prevent the amplification signal from being distorted through the driving amplifier and the generation of intermodulation in the bandwidth of the channel signal in which several frequencies are concentrated.

In addition, the power amplifier amplifies the power of the gain-adjusted signal in the drive amplifier, and amplifies the signal in accordance with the transmission level set for each frequency band. Therefore, the power amplifier includes a large-capacity transistor or a plurality of transistors configured in parallel, and amplifies the output of the RF signal to the maximum in a range that meets communication standards such as ACPR (Adjacent Channel Power Ratio).

The first matching circuit module 122 includes a low frequency / high frequency phase shift element to perform impedance matching between the filter stage 116 and the transceiver module 140.

The second matching circuit module 124 is connected between the front end module 110 and the power amplification module 130 and compensates for the impedance loss to suppress the distortion of the output signal of the power amplification module 130 and to provide a stable signal. It generates and delivers to the front end module (110).

The first matching circuit module 122 and the second matching circuit module 124 are designed to be located between the front end module 110 and the transceiver module 140 to form one matching circuit module 120.

Finally, the components constituting the transceiver module 140 will be described.

The power amplification module 130 and the transceiver module 140 are located at both ends of the top layer, respectively, to suppress the radio wave interference between the two modules as much as possible.

The first mixer 142 mixes an RF reception signal of a multi band band to an intermediate frequency signal, and the second mixer 147 mixes an intermediate frequency signal of a multi band band to an RF transmission signal.

The VCO 145 provides a reference frequency signal to the first mixer 142 and the second mixer 147, and the reference frequency signal is used to synthesize an intermediate frequency signal and an RF transmission signal.

However, a reference frequency signal may be minutely flowed to become unstable due to a change factor of an external environment such as temperature, and in this case, distortion may occur in the synthesized signal.

For this reason, in order to stabilize the reference frequency signal of the VCO 145, TCXO (TCXO is not included in the RF integrated module mounted on the top layer) and PLL (144, 146) is provided, PLL (144, 146) is provided The reference frequency signal provided from the VCO 145 is detected, compared with the oscillation frequency signal provided from the TCXO, and a control signal corresponding to the frequency difference is generated and output to the VCO 145.

The first PLL 144 performs a phase synchronous operation for the first mixer 142, and the second PLL 146 performs a phase synchronous operation for the second mixer 147.

Therefore, when the reference frequency signal flows, the first PLL 144 and the second PLL 146 detect this and generate / transfer a control signal, so that the VCO 145 can maintain a stable output of the reference frequency according to the control signal. .

The demodulator 143 demodulates an intermediate frequency signal and converts the intermediate frequency signal into a digital signal that can be processed by a baseband unit (the baseband unit is also located outside the RF integrated module and connected to the transceiver module 140). 148 modulates the digital signal processed by the baseband unit into an intermediate frequency signal.

The demodulator 143 and the modulator 148 may include an analog / digital signal converter, a fast fourier transform (FFT) circuit, a low pass filter (LPF), an error correction circuit, and the like.

The power detection circuit 149 may be provided with a device such as a HDET (hyper detector), and periodically detects the amount of power (power on the second mixer) of the transmission signal and transmits it to the modulator 148.

Accordingly, the modulator 148 may calculate a change in the amount of transmission power, and determine whether to adjust the transmission power level based on preset power level information.

The modulator 148 generates a control signal according to the determination result, and transmits the control signal to the power amplification module 130 through the power detection circuit 149. The power amplification module 130 amplifies the transmission signal to a predetermined value according to the control signal.

As described above, the front end module 110, the matching circuit module 120, the power amplification module 130, and the transceiver module 140 have a series of circuits unlike the structure in which the front end module 110, the matching circuit module 120, and the transceiver module 140 are mounted on a substrate in a state of a conventional device chip. It can be implemented in a single package chip by forming and molding a single module.

Referring to FIG. 3, two choke coils A (hereinafter referred to as “first choke coils”) including microstrip lines d and f are provided at a power stage of the power amplification module 130. 2 choke coil "is provided, where the first choke coil A is for a frequency signal in the 1 GHz band, and the second choke coil B is for a frequency signal in the 2 GHz band.

4 is a top view showing the shape of the first choke coil A of the one-chip RF integrated module 100 according to the first embodiment of the present invention, and FIG. 5 is the one chip according to the first embodiment of the present invention. Top view illustrating the shape of the second choke coil B of the RF integrated module 100.

4 and 5 illustrate a case where the first choke coil A and the second choke coil B are implemented only through a distribution element, and microstrips formed on two metal layers. Implemented through lines d1 and a, the microstrip lines d1 and a of each metal layer form mutual inductance.

First, the first choke coil A according to the first embodiment will be described with reference to FIG. 4.

Figure 4 (a) shows a microstrip line (hereinafter referred to as "first metal layer line") (d1) formed in the first metal layer, Figure 4 (b) shows a second metal layer The microstrip line (hereinafter referred to as "second metal layer line") (a) formed therein is shown.

The first metal layer line d1 is electrically connected to the pattern m of the power amplification module 130 through the connection pattern o and bent several times to form a twisted shape therein.

The second metal layer line (a) is also bent several times and twisted therein, and has a structure in which the second metal layer line (a) is energized with the first metal layer line (d1) through a via hole (a portion indicated by a center point). The mutual inductance formed by the layer line d1 and the second metal layer line a serves as an important factor for the line width, length, and distribution area of the microstrip line.

The factor of the first metal layer line d1 and the second metal layer line a shown in FIG. 4 is analyzed as follows.

Type of line according to metal layer Line type Line length (mm)    First metal layer line (d1) I1 0.325 I2 0.3182 I3 1.7 I4 1.625 I5 1.575 I6 1.238 I7 1.2 I8 0.875 I9 0.8125 I10 0.3875   Second metal layer line (a) a1 0.8 a2 0.5875 a3 1.225 a4 0.875 a5 1.225 a6 0.4 a7 0.1125

Referring to FIG. 4 (a), a dotted line region is displayed at the center of the first metal layer line d1, which has a distribution area of 0.875 mm × 1.2 mm according to Table 1 above.

4 (b), a dotted line region is similarly shown in the center of the second metal layer line a, and this region shows a distribution area of 0.875 mm × 1.225 mm according to Table 1 above. Have

The two dotted areas correspond to each other up and down on the first metal layer and the second metal layer, and can be regarded as the most important factor for forming mutual inductance.

Next, a second choke coil B according to the first embodiment will be described with reference to FIG. 5, and the second choke coil B is also implemented by microstrip lines f and C formed on different metal layers. .

FIG. 5A shows a microstrip line (hereinafter referred to as a "first metal layer line") f formed in the first metal layer, and FIG. 5B shows a second metal layer. The microstrip line (hereinafter referred to as "second metal layer line") C formed therein is shown.

The first metal layer line f is electrically connected to the connection pattern n of the power amplification module 130 through the connection pattern p and is bent several times to form an internal twist.

The second metal layer line (C) is also bent several times to have a twisted shape therein and has a structure that is energized with the first metal layer line (f) through the via hole, as described above, the first metal layer line (f) The mutual inductance formed by the second metal layer line (C) acts as an important factor of the line width, length, and distribution area of the microstrip line.

The factor of the first metal layer line f and the second metal layer line C shown in FIG. 5 is analyzed as follows.

Type of line according to metal layer Line type Line length (mm)      First metal layer line (f) b1 0.0245 b2 0.37213 b3 0.238 b4 0.3025 b5 0.21213 b6 0.275 b7 1.1775 b8 0.488 b9 1.05 b10 0.725 b11 0.9375 b12 0.1125   Second metal layer line (C) c1 1.122 c2 0.8245 c3 0.725 c4 1.05 c5 0.612 c6 0.1125

Referring to FIG. 5 (a), a dotted line region is displayed at the center of the first metal layer line f. According to Table 1, the region has a distribution area of 1.05 mm × 0.725 mm.

5B, a dotted line region is similarly displayed at the center of the second metal layer line C. According to Table 1, the region has a distribution area of 1.05 mm × 0.7255 mm. Have

As in the case of the first choke coil A, the two dotted areas correspond to each other up and down on the first metal layer and the second metal layer, and form mutual inductance and are important factors.

However, according to the distribution area, since the first choke coil A and the second choke coil B according to the first embodiment of the present invention are implemented using only the microstrip line, they can occupy a considerably wide mounting area. And there is room for further shrinkage.

Accordingly, the second and third embodiments of the present invention propose a method of implementing the first choke coil and the second choke coil by combining two types of distribution elements.

In the embodiment of the present invention, the two types of distribution elements are used as a microstrip line and a bonding wire.

6 is a top view showing the shape of the first choke coil A of the one-chip RF integrated module 100 according to the second embodiment of the present invention, and FIG. 7 is the one chip according to the third embodiment of the present invention. Top view illustrating the shape of the first choke coil of the RF integrated module 100.

Referring to FIG. 6, the first choke coil A according to the second embodiment may be implemented with microstrip lines d2 and e of different metal layers, similarly to the first embodiment. The microstrip line (hereinafter referred to as "first metal layer line") d2 and the microstrip line (hereinafter referred to as "second metal layer line") e of the second metal layer are shown in the first embodiment. In comparison, the length is much shorter and does not have an inwardly twisted shape.

In addition, the first choke coil A according to the second embodiment includes a total of seven connection pads, wherein the first pad h1, the second pad h2, and the seventh pad h7 are power amplifier modules. The pad is connected to the circuit 130, and the third pad h3, the fourth pad h4, the fifth pad h5, and the sixth pad h6 are the first metal layer line d2 and the second pad h6. The metal layer line e is a pad for connecting through the bonding wire j1.

Looking at the pad structure as follows.

The first metal layer line d2 is divided into two parts, and third pad h3 and fourth pad h4 are formed at both ends of the inner first metal layer line d2, and the outer first metal is formed. A fifth pad h5 is formed at the inner end of the layer line d2.

The sixth pad h6 is formed at a position adjacent to the fourth pad h4 of the inner first metal layer line d2, and the sixth pad h6 is one side of the second metal layer line e. Connected to the end.

The bonding wire j1 connects the third pad h3 and the fifth pad h5, connects the fourth pad h4 and the sixth pad h6, and has three strands in connecting the respective pads. Bonding wire j1 is used.

The number of strands (bonding number) of the bonding wire j1 may be adjusted by adjusting the DC resistance value (the number of strands and the DC resistance are inversely related), and the length of the bonding wire j1 may be adjusted by adjusting the inductance value.

Referring to FIG. 7, the first choke coil A according to the third embodiment has a total of seven pads, and some pads are electrically connected by bonding wires, but are similar to the second embodiment. The point where the microstrip line is formed through the first metal layer line d3 is not provided without the second metal layer line.

The first choke coil A according to the third embodiment includes a total of seven connection pads, and the first pad i1, the second pad i2, and the seventh pad i7 are the power amplifier module 130. ) The third pad i3, the fourth pad i4, the fifth pad i5, and the sixth pad i6 are pads to be connected to a circuit, and the first metal layer line d3 is divided into two parts. It is a pad for connecting.

The first metal layer line d3 is divided into two parts, and unlike the second embodiment, both ends of the inner first metal layer line d3 are diagonal to the third pad i3 and the sixth pad i6. Connect in the form.

A fifth pad i5 is formed at an inner end of the outer first metal layer line d3, and the bonding wire j2 connects the fifth pad i5 and the third pad i3, and the fourth pad. (i4) and the sixth pad (i6) are connected.

Of course, the first choke coil A according to the third embodiment of the present invention adjusts the DC resistance component and the mutual inductance value by the number of strands and the length of the bonding wire j2.

8 is a top view illustrating the shape of a second choke coil B of the one-chip RF integrated module 100 according to the second embodiment of the present invention.

Meanwhile, referring to FIG. 8, the second choke coil B according to the second embodiment may have microstrip lines f2 and g of different metal layers similarly to the first choke coil A according to the second embodiment. And a microstrip line of the first metal layer (hereinafter referred to as a "first metal layer line") f2 and a microstrip line of the second metal layer (hereinafter referred to as a "second metal layer line"). (g) is much shorter than the first embodiment and does not have an inwardly twisted shape.

The first metal layer line f2 is further separated from each other, and the left first metal layer line f2 includes four connection pads. Among the four connection pads, the first pad k1, the second pad k2, and the third pad k3 are pads for connecting to a circuit of the power amplifier module 130, and the fourth pad k4 is a bonding wire. It is a pad connected to (j3).

Fourth pad k4 and a fifth pad k5 are formed at both ends of the first metal layer line f2.

The right first metal layer line f2 has a seventh pad k7 formed at the inner end thereof, and the outer end thereof is connected to the second metal layer line g.

The bonding wire j3 connects the fourth pad k4 and the sixth pad k6 and the fifth pad k5 and the seventh pad k7.

Of course, the second choke coil B according to the second embodiment may adjust the DC resistance component and the mutual inductance value by the number of strands and the length of the bonding wire j3.

First metal layer lines d2, d3, and f2 of the first choke coil A according to the second and third embodiments and the second choke coil B according to the second embodiment, and the second metal layer The lines e and g can be shortened in length by the tunable bonding wires j1, j2 and j3, and thus the mounting area can be much reduced compared to the first embodiment.

The equivalent circuits of the choke coils A and B and the bonding wires j1, j2, j3 for maintaining a predetermined total impedance (admittance) value can be numerically interpreted as follows.

cos (β × l) = ω × L × Y _a × sin (β × l)

Here, β = 2π / λ, l = length of the choke coils A and B according to the second embodiment (or the third embodiment),

ω = 2π × f (: frequency band of signal being processed)

L = the inductance of the bonding wires j1, j2, j3, Y _a = the admittance of the choke coils A, B according to the second embodiment (or the third embodiment).

Y _a × sin (β × l) = Y ₀ = 1 / 50Ω

Here, Y ₀ = an admittance value of the choke coils d1 and a or f and C according to the first embodiment.

Substituting Equation 2 into Equation 1 leads to Equation 3 below.

cos (β × l) = ω × L × Y ₀

Finally, Equation 3 is summarized in the equivalent equation of " l = (1 / β) × cos ^-1 (ω × L × Y ₀ ).

As described above, by configuring each component in a single package, in particular, by reducing the mounting area of the first choke coil (A) and the second choke coil (B) provided in the power amplifier module 130, RF according to the present invention The integrated module 100 may be implemented on a substrate having a horizontal length of at least 10 mm, a maximum of 10.5 mm, and a vertical length of at least 5 mm and a maximum of 5.5 mm.

Although the present invention has been described above with reference to the embodiments, these are only examples and are not intended to limit the present invention, and those skilled in the art to which the present invention pertains may have an abnormality within the scope not departing from the essential characteristics of the present invention. It will be appreciated that various modifications and applications are not illustrated. For example, each component specifically shown in the embodiment of the present invention can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

According to the RF integrated module according to the present invention, each circuit element constituting the RF stage is implemented as a single package element, and the mounting area on the substrate is minimized by designing the choke coil provided in the power amplifier module in an efficient structure. Freedom is secured in the layout design of modules provided for other functions, and the mounting process of the device is reduced, thereby reducing defects and increasing productivity.

Claims (12)

A front end module for separating and filtering a multiband band transmission / reception signal; A power amplification module for amplifying a transmission signal and transferring the signal to the front end module; A transceiver module for converting and processing a baseband signal and an RF signal; And a matching circuit module that matches an impedance between the transceiver module and the front-end module, on a single substrate. The choke coil of the power amplification module may include a first inductor part formed of a metal line; And a second inductor unit provided as a bonding element connected to the first inductor unit. The method of claim 1, wherein the bonding element One-chip RF integrated module, characterized in that the bonding wire. The method of claim 1, The first inductor portion first metal line; And a second metal line spaced apart from the first metal line, The bonding element is a one-chip RF integrated module, characterized in that for electrically connecting the first metal line and the second metal line. The method of claim 3, wherein the bonding element One or more, One-chip RF integrated module, characterized in that located on one or more separated first metal line or second metal line to connect the separated metal line. The method of claim 3, wherein The first metal line is formed in the first metal layer, The one-chip RF integrated module, characterized in that the second metal line is formed in the second metal layer. The choke coil of claim 1, wherein the choke coil is One-chip RF integrated module, characterized in that provided in plurality according to the type of the multi-band band. The choke coil of claim 1, wherein the choke coil is And the length of the metal line and the length of the bonding element are combined to maintain a predetermined impedance value. The method of claim 1, The power amplifier module and its signal input and output pads are formed at one end of the substrate, The transceiver module and its signal input / output pads are formed at the other end of the substrate, The front end module is mounted on the power amplifier module side of the mounting area between the power amplifier module and the transceiver module, The matching circuit module is a one-chip RF integrated module, characterized in that mounted on the transceiver module side of the mounting area between the power amplifier module and the transceiver module. The method of claim 1, wherein the first inductor portion A first strip line formed on the first metal layer of the substrate and energized with the power amplifier module through a connection pattern; And And a second strip line formed on the second metal layer of the substrate and passing through the first strip line through a via hole. The method of claim 9, One or more strip lines of the first strip line and the second strip line is a one-chip RF integrated module, characterized in that the aberration has a form twisted inward. The method of claim 1, The first inductor unit is formed on the first metal layer of the substrate, the first strip line is electrically connected to the power amplifier module and separated into a plurality; And a second strip line formed in the second metal layer of the substrate and energized with the first strip line through via holes. The second inductor unit is a one-chip RF integrated module, characterized in that it comprises a bonding wire for energizing the separated first strip line. The method of claim 11, One or more strip lines of the first strip line and the second strip line is a one-chip RF integrated module, characterized in that forming a ring shape or twisted inwardly.

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