KR100780712B1 - Tft-lcd and manufacturing method for thereof - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor display device and a method of manufacturing the same. In the related art, a thin film transistor display device and a method of manufacturing the same are used in order to prevent light emitted from the backlight between the color layers representing the respective RGB colors of the color filter. By forming a, there was a problem that the manufacturing cost increases relatively. In view of the above problems, the present invention provides a glass substrate; A gate electrode positioned on an upper portion of the glass substrate; A gate insulating film disposed on an upper surface of the glass substrate and the gate electrode; An active positioned at a position opposite to an upper portion of the gate electrode and a side portion of the gate electrode; A source and a drain spaced apart from each other by a predetermined distance from an upper center portion of the active and located on the side of the active; A data line connected to said source; A passivation film located on an upper surface of the structure; A color filter positioned above the passivation layer of the region where the active is not formed and overlapping adjacent color layers on the upper side of the data line; Light of backlight in the inter-region region of the pixel electrode is composed of a pixel electrode connected to the drain through a contact hole formed in the passivation layer and positioned on the non-overlapping color layer of the color filter without using a black matrix. This prevents the outflow to the outside, thereby reducing the manufacturing cost.

Description

Thin-film transistor display device and its manufacturing method {TFT-LCD AND MANUFACTURING METHOD FOR THEREOF}

1 is a plan view of a conventional thin film transistor display device.

2A to 2G are sectional views showing the manufacturing process of the conventional thin film transistor display device showing the AA ′ cross section in FIG. 1.

3 is a plan view of the thin film transistor display device of the present invention.

4A through 4F are cross-sectional views of a manufacturing process of the thin film transistor display device of the present invention, taken along the line A-A 'in FIG.

FIG. 5 is an enlarged cross sectional view of a region where the color filters overlap in FIG. 4F; FIG.

** Description of symbols for the main parts of the drawing **

1: glass substrate 2: gate electrode

3: gate insulating film 4: active

5: source 6: drain

7: Data line 8: Passivation film

9: color filter 11: pixel electrode

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor display device and a method of manufacturing the same. In particular, a black matrix can be omitted from a display device having a color filter (COT, COLOR FILTER ON TFT) structure in which a color filter is located on a lower plate, thereby reducing manufacturing costs A transistor display device and a method of manufacturing the same.

Fig. 1 is a plan view of a conventional thin film transistor display device, and as shown therein, a gate electrode 2 protruding a predetermined distance from a laterally long gate line; Source 5 and drain 6 located on the left and right sides of the gate electrode; A data line (7) connected to said source (5) and longitudinally positioned; A black matrix 10 positioned on an upper side of the data line 7; A color filter (9) which is widely located in an area formed by the data line (7) and the gate line; And a pixel electrode 11 connected to the drain 6 and positioned above the color filter 9.

2A to 2G are cross-sectional views of a manufacturing process of a conventional thin film transistor display device having a cross-sectional view taken along the line A-A 'in FIG. 1, as shown in FIG. Patterning to form a gate electrode 2 on an upper portion of the glass substrate 1 (FIG. 2A); The gate insulating film 3 and the amorphous silicon are sequentially deposited on the upper surface of the structure, and the amorphous silicon is patterned so as to be active on the gate insulating film 3 facing the gate electrode 2 and the peripheral portion thereof. Forming a step (Fig. 2b); A metal is deposited on the upper surface of the structure, and the metal is patterned to form a source 5 and a drain 6 spaced apart from each other by a predetermined distance from the center of the active 4 to the side of the active 4. (Step 2c); Depositing a passivation film (8) on the upper surface of the structure, and forming a contact hole in the passivation film (8) to expose a portion of the upper part of the drain (FIG. 2D); Forming a color filter (9) located on the flat passivation film (8) in which the active (4) is not formed (FIG. 2E); Depositing and patterning the light absorbing material on the upper surface of the structure to form a black matrix (10) located between the color filters (9); Depositing and patterning ITO on the upper surface of the structure to form a pixel electrode 11 connected to the exposed drain 6 and positioned on the upper side of the color filter 9 (FIG. 2G). do.

Hereinafter, a method of manufacturing the conventional thin film transistor display device as described above will be described in more detail.

First, as shown in FIG. 2A, metal is deposited on the upper surface of the glass substrate 1.

Next, a photoresist is applied to the upper surface of the deposited metal, and exposed and developed to form a photoresist pattern positioned on an upper portion of the metal.

Next, the exposed metal is etched by an etching process using the photoresist pattern as an etching mask, and then the photoresist pattern is removed to form a gate electrode 2 on an upper portion of the glass substrate 1.

Next, as shown in FIG. 2B, the gate insulating film 3 and the amorphous silicon are sequentially deposited on the upper surface of the structure, and the amorphous silicon is patterned so as to face the gate electrode 2 and its peripheral portion. The active 4 is formed on the insulating film 3.

Then, as shown in FIG. 2C, metal is deposited on the upper surface of the structure, and the metal deposited through the photolithography process is patterned to be spaced apart from each other at a central portion of the active 4, and the active 4 Source (5) and drain (6) to the sides of

Then, as shown in FIG. 2D, a passivation film 8 is deposited on the upper surface of the structure, and a contact hole is formed in the deposited passivation film 8 through a photolithography process to form the drain 6. Expose the upper part.

Then, as shown in Fig. 2E, a color filter is applied to the flat passivation film 8, on which the active 4 is not formed, by a printing method or the like, and implements RGB for each pixel. 9) form.

In this case, the boundary of the color filter 9 is an area in which light is not transmitted, that is, the upper side of the active line 4 and the data line 7 connected to the source, and the colors of the adjacent color layers are different.

Next, as illustrated in FIG. 2F, the light absorbing material is deposited on the upper surface of the structure, and patterned to form a black matrix 10 in the region between the color layers implementing the color filter 9.

In this case, the black matrix 10 is positioned on the passivation film 8 at a position opposite to the data line 7 described above.

The black matrix 10 serves to prevent the light of the backlight from passing through the glass substrate 1, the gate insulating film 3, the passivation film 8, and the color filter 9 in an oblique direction to the outside. The thicker the width and thickness of the black matrix 10, the greater the effect of light blocking.

In addition, the black matrix 10 is excellent in adhesiveness and light absorption rate, and because it is formed in direct contact with the pixel electrode, it must satisfy characteristics such as excellent insulation property, but it is difficult to find a material that satisfies all these conditions. To replenish, an insulating film is deposited on the black matrix 10 and the color filter 9, and then a pixel electrode is formed on the insulating film.

Then, as shown in FIG. 2G, ITO is deposited on the upper surface of the structure, and is patterned and connected to an upper portion of the exposed drain 6 through a contact hole formed in the passivation film 8. Pixel electrodes 11 positioned in the color layers of the color filter 9 are formed, respectively.

As described above, the conventional thin film transistor display device and a method of manufacturing the same have a relatively high manufacturing cost by forming a black matrix to prevent light from being emitted to the outside between the color layers representing the RGB of the color filter. In addition, there is a problem that the electrical properties of the thin film transistor display device are deteriorated because there is no material having a characteristic that satisfies all the functions of the black matrix.                         

It is an object of the present invention to provide a thin film transistor display device and a method of manufacturing the same, which can prevent light from being emitted to the outside from a region between pixel electrodes without using a black matrix.

The above object is a glass substrate; A gate electrode positioned on an upper portion of the glass substrate; A gate insulating film disposed on an upper surface of the glass substrate and the gate electrode; An active positioned at a position opposite to an upper portion of the gate electrode and a side portion of the gate electrode; A source and a drain spaced apart from each other by a predetermined distance from an upper center portion of the active and located on the side of the active; A data line connected to said source; A passivation film located on an upper surface of the structure; A color filter positioned above the passivation layer of the region where the active is not formed and overlapping adjacent color layers on the upper side of the data line; Forming a gate electrode on a glass substrate of a thin film transistor display device comprising a pixel electrode connected to the drain through a contact hole formed in the passivation layer and positioned above the non-overlapping color layer of the color filter. Wow; Sequentially depositing a gate insulating film and an amorphous silicon layer on an upper surface of the glass substrate on which the gate electrode is formed; Patterning the amorphous silicon to form an active on the gate insulating film opposite the gate electrode; Depositing and patterning a metal on top of the structure to form a source and a drain on the upper periphery and side surfaces of the active and to form a data line connected to the source; Depositing a passivation film on the upper surface of the structure and forming a contact hole in the passivation film through a photolithography process to expose a portion of the upper portion of the drain; A color filter is formed by forming red, green, and blue colors on the passivation layer of the pixel region in which the active is not formed, and forming a color layer overlapping the neighboring color layer on the upper side of the data line. Steps; It is achieved by manufacturing through a manufacturing method comprising depositing ITO on the upper surface of the structure, patterning it to form a pixel electrode connected to the exposed drain and located on a non-overlapping color layer of a color filter. When described in detail with reference to the accompanying drawings, the present invention as follows.

Fig. 3 is a plan view of the thin film transistor display device of the present invention, and as shown therein, a longitudinally long data line 7; A source 5 projecting perpendicularly from the data line 7; A drain 6 positioned to be spaced apart from the source 5 by a predetermined distance; A gate electrode (2) projecting vertically from the laterally extending gate line and positioned in a region between the source (5) and the drain (6); An active 4 positioned at an upper side of the gate electrode 2 and a lower side of the source 5 and the drain 6; Located in the pixel electrode region formed by the data line 7 and the gate line, a part of which is located up to the upper side of the data line 7 to the color layers R, G, and B overlapping the color layers of adjacent pixels. It is composed.

4A to 4F are cross-sectional views of a manufacturing process of the thin film transistor display device according to the present invention. As shown in FIG. 4A to 4F, metal is deposited on the upper surface of the glass substrate 1 and patterned by a photolithography process. Forming a gate electrode 2 on an upper portion of the substrate (FIG. 4A); The gate insulating film 3 and the amorphous silicon are sequentially deposited on the upper surface of the structure, and the amorphous silicon is patterned so as to be active on the gate insulating film 3 facing the gate electrode 2 and the peripheral portion thereof. Forming a step (Fig. 4b); A metal is deposited on the upper surface of the structure, and the metal is patterned to form a source 5 and a drain 6 spaced apart from each other by a predetermined distance from the center of the active 4 to the side of the active 4. Step (FIG. 4C); Depositing a passivation film (8) on the upper surface of the structure and forming a contact hole in the passivation film (8) to expose a portion of the upper part of the drain (FIG. 4D); It is located on the flat passivation film 8 where the active 4 is not formed, and the color layers of adjacent regions overlap on the upper passivation film 8 of the data line 7 connected to the source 5. Forming a color filter 9 (FIG. 4E); Depositing and patterning ITO on the upper surface of the structure to form a pixel electrode 11 connected to the exposed drain 6 and positioned on the non-overlapping portion of the color filter 9 (Fig. 4f).

Hereinafter, a method of manufacturing the thin film transistor display device of the present invention as described above will be described in more detail.

First, as shown in FIG. 4A, the gate electrode 2 is formed on the upper front surface of the glass substrate 1 in the same manner as in the prior art.

Next, as shown in FIG. 4B, the gate insulating film 3 and the amorphous silicon are sequentially deposited on the upper surface of the structure, and the amorphous silicon is patterned to form a gate facing the gate electrode 2 and its peripheral portion. The active 4 is formed on the insulating film 3.

Next, as shown in FIG. 4C, metal is deposited on the upper surface of the structure, and the metal deposited through the photolithography process is patterned to be spaced apart from each other at a central portion of the active 4, and the active 4 Source 5 and drain 6 extending up to the side of the (), and simultaneously forming data line (7) connected to the source (5).

Next, as shown in FIG. 4D, a passivation film 8 is deposited on the upper surface of the structure, and a contact hole is formed in the deposited passivation film 8 through a photolithography process. Expose the upper part.

Then, as shown in Fig. 4E, a color filter is applied on the flat passivation film 8, on which the active 4 is not formed, by a printing method or the like, thereby implementing RGB for each pixel. 9) form.

At this time, each color layer of the color filter 9 overlaps with an adjacent color layer. The overlapping area is overlapped on the area where the black matrix is located in the prior art, that is, on the upper passivation film 8 of the data line 7.

If the overlapping area is large, the aperture ratio of the thin film transistor display device is lowered, and if it is too small, the photomultiplication effect of light leaking out of the backlight is generated. Therefore, the overlapping area is precisely matched to the specifications of each thin film transistor display device. Control.

In this case, when the color layers representing different colors overlap, the lower color layer transmits only a specific wavelength of light of the backlight, and the upper color layer transmits the lower color layer. By not transmitting light of a specific wavelength, it is possible to prevent the light of the backlight from flowing out from the area between the pixel electrodes, such as using a black matrix.

Such structural characteristics are shown in FIG.

5 is a cross-sectional view of a portion in which the color layers constituting the color filter 9 overlap with each other in the thin film transistor display device of the present invention. As shown in FIG. In the overlapping part of the color layer, the color filter cannot penetrate.

In addition, since the color layer overlaps with the color layer, the color layer may be formed using the insulating layer 12 because the color difference may be affected by the pixel electrode. After removing the step 9), a transparent electrode may be formed. In order to realize the overlapped color layers, a color filter for implementing red, green, or blue colors is formed, and the neighboring color layers are formed of green, blue, It is formed by printing blue or red, green or blue color layers so as to overlap each other.

Then, as shown in FIG. 4F, ITO is deposited on the upper surface of the structure, and is patterned and connected to an upper portion of the exposed drain 6 through a contact hole formed in the passivation film 8. The pixel electrodes 11 are respectively located at portions where the color layers of the color filter 9 do not overlap.

As can be seen from this configuration, the color layers R, G and B constituting the color filter 9 overlap each other on the upper side of the data line 7, so that the light emitted in the diagonal direction from the backlight is the data. It is possible to block the emission from the upper side of the line 7, in other words, from the area between the pixels to the outside.

At this time, since the active 4 is formed in the region of the gate electrode 2 and no light is transmitted, it is not necessary to form the color layers R, G, and B.

However, in order to prevent photo leakage from occurring due to external light incident on the upper portion of the thin film transistor, a color filter may also be formed on the upper side of the thin film transistor.

In other words, the present invention does not use a black matrix at the boundary of the part where light is transmitted, but uses different wavelengths in the laminated color layers by using a characteristic of transmitting only light having a specific wavelength according to the color indicated by the color layer. Due to the lamination of the transmissive bilayer, it is possible to block the transmission of light.

As described above, the thin film transistor display device of the present invention and a method of manufacturing the same include forming adjacent color layers of the color filter so as to overlap on the upper side of the data line, thereby preventing the light of the backlight from being interposed between the pixel electrodes without using a black matrix. Prevents leakage to the outside, reduces the manufacturing cost, reduces the defect rate due to the simplification of the process, and deteriorates the characteristics of the thin film transistor display device by not using a black matrix that is not easy to select an appropriate material. It is effective to prevent.

Claims (5)

A glass substrate; A gate electrode positioned on an upper portion of the glass substrate; A gate insulating film disposed on an upper surface of the glass substrate and the gate electrode; An active positioned at a position opposite to an upper portion of the gate electrode and a side portion of the gate electrode; A source and a drain spaced apart from each other by a predetermined distance from an upper center portion of the active and located on the side of the active; A data line connected to said source; A passivation film located on an upper surface of the structure; A color filter positioned above the passivation layer of the region where the active is not formed and overlapping adjacent color layers on the upper side of the data line; And a pixel electrode connected to the drain through a contact hole formed in the passivation layer and positioned above the non-overlapping color layer of the color filter. The thin film transistor array of claim 1, wherein the neighboring color layers overlapping the upper side of the data line are one of red, green, and blue, and have different colors. Forming a gate electrode on the glass substrate; Sequentially depositing a gate insulating film and an amorphous silicon layer on an upper surface of the glass substrate on which the gate electrode is formed; Patterning the amorphous silicon to form an active on the gate insulating film opposite the gate electrode; Depositing and patterning a metal on the active and gate insulating layers to form a source and a drain on the upper and side portions of the active and to form a data line connected to the source; Depositing a passivation film on the upper surface of the substrate including the data line, the source and the drain, and forming a contact hole in the passivation film through a photolithography process to expose a portion of the upper portion of the drain; A color filter is formed by forming red, green, and blue colors on the passivation layer of the pixel region in which the active is not formed, and forming a color layer overlapping the neighboring color layer on the upper side of the data line. Steps; Depositing ITO on the exposed entire top surface of the drain including the color filter, patterning it, and forming a pixel electrode connected to the exposed drain and positioned on a non-overlapping color layer of the color filter; A method of manufacturing a thin film transistor display device, characterized in that. The method of claim 3, wherein the color layers of the color filter implement red, green, and blue colors, and colors of neighboring color layers are different from each other. The method of claim 3, wherein the color layer of the color filter is formed by applying a screen printing method.

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