KR100774525B1 - Pre- calsinated rib barrier repmover composition and method for removing dielectro layer using the same - Google Patents
Pre- calsinated rib barrier repmover composition and method for removing dielectro layer using the same Download PDFInfo
- Publication number
- KR100774525B1 KR100774525B1 KR1020060108241A KR20060108241A KR100774525B1 KR 100774525 B1 KR100774525 B1 KR 100774525B1 KR 1020060108241 A KR1020060108241 A KR 1020060108241A KR 20060108241 A KR20060108241 A KR 20060108241A KR 100774525 B1 KR100774525 B1 KR 100774525B1
- Authority
- KR
- South Korea
- Prior art keywords
- ethylene glycol
- composition
- display panel
- plasma display
- partition
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 22
- 230000004888 barrier function Effects 0.000 title description 11
- 238000005192 partition Methods 0.000 claims abstract description 42
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims abstract description 34
- -1 alkyl glycol Chemical compound 0.000 claims abstract description 26
- 150000001412 amines Chemical class 0.000 claims abstract description 11
- 125000001931 aliphatic group Chemical group 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims abstract description 8
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims abstract description 4
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims abstract description 3
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims abstract description 3
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 claims abstract description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims abstract description 3
- YEYKMVJDLWJFOA-UHFFFAOYSA-N 2-propoxyethanol Chemical compound CCCOCCO YEYKMVJDLWJFOA-UHFFFAOYSA-N 0.000 claims abstract description 3
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 claims abstract description 3
- 238000010304 firing Methods 0.000 claims description 7
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical group NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 5
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 2
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 2
- XYUINKARGUCCQJ-UHFFFAOYSA-N 3-imino-n-propylpropan-1-amine Chemical compound CCCNCCC=N XYUINKARGUCCQJ-UHFFFAOYSA-N 0.000 claims description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 2
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- GZBUMTPCIKCWFW-UHFFFAOYSA-N triethylcholine Chemical compound CC[N+](CC)(CC)CCO GZBUMTPCIKCWFW-UHFFFAOYSA-N 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 230000035515 penetration Effects 0.000 abstract description 6
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 239000003513 alkali Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- 238000009472 formulation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 238000005488 sandblasting Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- AEQDJSLRWYMAQI-UHFFFAOYSA-N 2,3,9,10-tetramethoxy-6,8,13,13a-tetrahydro-5H-isoquinolino[2,1-b]isoquinoline Chemical compound C1CN2CC(C(=C(OC)C=C3)OC)=C3CC2C2=C1C=C(OC)C(OC)=C2 AEQDJSLRWYMAQI-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RGHNJXZEOKUKBD-SQOUGZDYSA-M D-gluconate Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O RGHNJXZEOKUKBD-SQOUGZDYSA-M 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 229940050410 gluconate Drugs 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000176 sodium gluconate Substances 0.000 description 1
- 235000012207 sodium gluconate Nutrition 0.000 description 1
- 229940005574 sodium gluconate Drugs 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 230000002522 swelling effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/42—Amino alcohols or amino ethers
- C11D1/44—Ethers of polyoxyalkylenes with amino alcohols; Condensation products of epoxyalkanes with amines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Detergent Compositions (AREA)
Abstract
Description
본 발명은 플라즈마 디스플레이 패널(PDP) 가소성 격벽 제거제 조성물에 관한 것이다. 특히, 본 발명은 유전층 밑의 금속 전도층에 영향을 주지 않고 격벽을 제거하는 데 사용하는 조성물 및 이를 이용한 격벽 제거 방법에 관한 것이다. The present invention relates to a plasma display panel (PDP) plastic bulkhead remover composition. In particular, the present invention relates to a composition used to remove a partition without affecting the metal conductive layer under the dielectric layer and a method for removing the partition using the same.
일반적인 플라즈마 디스플레이 패널을 구성하는 요소는 상판, 하판 그리고 이를 연결하는 패널로 구성된다. 상판은 유리 기판 위에 투명한ITO전극을 코팅하고 그 위에 미소 전극을 형성시킨 후 투명 유전층과 보호막을 올려서 만들어진다. 하판은 어드레스 전극, 유전체막, 격벽 및 형광체 등의 형성을 거치면서 500∼600 ℃의 고온소성을 통해 전극을 형성하여 방전방의 격리를 위해 격벽을 여러 가지 방법으로 쌓아서 만들어 진다. PDP패널은 상판과 하판을 조립, 봉합, 배기, 가스주입을 통해 완성된다. 자연스러운 용량 형성을 통한 전류 제한을 위하여 PbO 계열의 유전층을 도포하고, 그 표면에 MgO 보호막을 증착한다. 이 유전층 형성으로 인하여 AC PDP의 주요 특징중의 하나인 메모리 특성이 나타난다.Elements constituting a general plasma display panel are composed of a top plate, a bottom plate, and a panel connecting them. The top plate is made by coating a transparent ITO electrode on a glass substrate, forming a microelectrode on it, and then raising a transparent dielectric layer and a protective film. The lower plate is formed by stacking the partition walls in various ways to isolate the discharge chamber by forming electrodes through high temperature firing at 500 to 600 ° C. while forming address electrodes, dielectric films, partition walls, and phosphors. PDP panels are completed by assembling, sealing, exhausting, and gas injecting the top and bottom plates. PbO-based dielectric layers are applied for current limitation through natural capacitance formation and MgO protective films are deposited on the surface. This dielectric layer formation results in memory characteristics, one of the main characteristics of AC PDP.
MgO 보호막은 PbO 유전층을 이온의 스퍼터링으로부터 보호하여 주며, 또한 방전시 낮은 에너지의 이온이 표면에 부딪혔을 때 비교적 높은 이차 전자 발생계수의 특성을 가져 방전 플라스마의 구동 및 유지전압을 낮춰주는 역할을 한다. 방전기체는 주로 페닝(penning) 혼합기체를 사용하는 데, He, Ne, Ar 또는 이들의 혼합기체로 바탕기체(buffer gas)를 형성하고, 형광체를 발광시키는 진공자외선의 제공원(source)으로써 소량의 Xe 기체를 섞어서 사용한다. The MgO protective layer protects the PbO dielectric layer from sputtering of ions, and lowers the driving and holding voltage of the discharge plasma by having a relatively high secondary electron generation coefficient when low energy ions hit the surface during discharge. The discharge gas mainly uses a penning mixture gas, which forms a buffer gas with He, Ne, Ar, or a mixture thereof, and serves as a source of vacuum ultraviolet light that emits phosphors. Mix and use Xe gas.
PDP의 격벽(Rib barrier)으로 사용되는 페이스트의 고형분은 PbO, SiO2를 주성분으로 하여, 특히 PbO의 함량 70% 이상(예를 들면, PbO 76%, SiO2 13%, B2O3 9%, Al2O3 4.5% 수준)으로 구성되어 있다. 유전막은 PDP 구현에 있어서 유도전류 의한 방전 현상에 있어서 절연막 역할을 수행하며 거의 납유리에 가까운 조성으로 완전 유리화 할 경우 절연성이 보장되는 열에 강한 절연막이다. 이에 반해, 격벽 재료는 형광체를 일정 공간에 저장하는 기능과 형광체 간의 혼합을 방지하는 역할을 수행하여야 하므로, 형광체의 발광 성능에 대응하도록 조성이 변형된다. 따라서, 이러한 조성상의 차이를 고려하여 각각에 대하여 효과적인, 차별화된 제거제 조성물이 제공될 수 있다. The solid content of the paste used as the rib barrier of PDP is mainly composed of PbO and SiO 2 , and especially PbO content of 70% or more (eg, PbO 76%, SiO 2 13%, B 2 O 3 9%). , Al 2 O 3 4.5% level). The dielectric film serves as an insulating film in the discharge phenomenon caused by the induction current in the PDP implementation, and is an insulating film resistant to heat when fully vitrified with a composition close to lead glass. On the other hand, the partition material has to function to store the phosphor in a predetermined space and to prevent mixing between the phosphors, so that the composition is modified to correspond to the luminous performance of the phosphor. Thus, taking into account these differences in composition, an effective, differentiated remover composition can be provided for each.
PDP의 격벽 형성공정에서 격벽 재료 페이스트를 도포한 후 저온에서 건조하게 되고 격벽의 경우는 격벽을 형성하기 위하여 일반적으로 샌드 블라스팅에 의하여 밭고랑처럼 길다란 골을 만든다. 이때 2단계의 소성과정이 이루어지며 가소성 과정인 100~120℃ 건조과정에서 격벽에 이상이 없으면 소성공정을 진행하여 유리 상태로 만든다. 그러나 이러한 소성 전에 격벽의 골 형태가 무너진다든지 아니면 평활도에 문제가 생기게 되면 소성하여도 불량품이 되게 되고 전극이 형성된 고가의 유리판을 폐기하여야 하고 이러한 폐기물량은 PDP제조의 원가에 상당한 부담이 된다. 이 단계에서, 가소성(假燒成: pre-calcinated 또는 Low temperature calcinated) 격벽재가 유효하게 제거될 수 있다면 격벽재가 제거된 패널은 격벽 형성 공정에 다시 투입될 수 있다. In the PDP partition wall forming process, the partition material paste is applied and then dried at a low temperature. In the case of the partition wall, sand blasting generally makes long valleys like furrows to form the partition wall. At this time, a two-step firing process is carried out, and if there is no abnormality in the partition wall during the drying process of 100 ~ 120 ° C., the firing process is performed to make a glass state. However, if the corrugation of the bulkhead collapses or the problem of smoothness occurs before firing, it becomes a defective product even when firing, and the expensive glass plate on which electrodes are formed must be discarded, and the amount of waste is a considerable burden on the cost of manufacturing PDP. In this step, if the plastic material (pre-calcinated or low temperature calcinated) partition material can be effectively removed, the panel from which the partition material has been removed can be put back into the partition forming process.
종래에는 단일 성분의 용제로 불량 격벽재를 제거하여 불량 PDP 유리판을 재생하고자 하는 시도를 하였다. 그러나 단일 유기 용제에 의한 격벽재나 유전층의 제거방법은 시간이 많이 걸리고 전극층을 부식하는 문제가 있었다. 또한, 국내특허공보 제2006-0013196호에는 pH 13 이상의 고농도 알칼리 제제를 사용하여 격벽을 제거하고자 시도하기도 하였으나, 이러한 고농도 알칼리 제제는 경우에는 제거 현상에 있어서 완벽한 제거 효율을 나타내지 못하고 반응시 일정성분의 유기 용제가 함유되어야 하고, 다량의 세척에 대한 잔류물 제거 관련 후속공정이 불가피하다는 문제를 야기시키는 단점이 있었다. Conventionally, attempts have been made to reclaim a defective PDP glass plate by removing the defective partition wall material with a single component solvent. However, the method of removing the partition wall material or the dielectric layer by a single organic solvent takes a long time and has a problem of corrosion of the electrode layer. In addition, although the Korean Patent Publication No. 2006-0013196 attempted to remove the partition wall using a high concentration alkali formulation of pH 13 or higher, such a high concentration alkali formulation did not exhibit perfect removal efficiency in the removal phenomenon, and Organic solvents have to be contained, and there is a disadvantage that causes a problem that subsequent processes related to residue removal for large amounts of washing are inevitable.
이러한 격벽 제거제는 침투성이 좋아 제거효율이 좋아야 하고 Ag와 같은 금속으로 된 전극층에 손상을 주지 않아야 한다.Such barrier removers should have good permeability and good removal efficiency and should not damage electrode layers made of metal such as Ag.
따라서, 본 발명은 기본적으로 금속으로 이루어진 전극층에 대한 손상을 방지하고, 고농도의 알칼리를 사용하지 않고 격벽제거재로서 침투력 및 제거효율이 향상된 가소성 격벽 제거제 조성물 및 이를 이용하여 효율적으로 격벽을 제거하는 방법을 제공하고자 하는 것이다. Accordingly, the present invention is to prevent damage to the electrode layer consisting essentially of the metal, and to improve the penetration and removal efficiency as a barrier rib removing material without using a high concentration of alkali, and a method for efficiently removing the barrier rib using the same Is to provide.
본 발명은 상기와 같은 기술적 과제를 달성하기 위하여, The present invention to achieve the above technical problem,
a) 알킬글리콜류 또는 그의 유도체 3 내지 30 중량%;a) 3 to 30 wt% of alkyl glycols or derivatives thereof;
b) 에틸렌글리콜모노알킬에테르류 또는 그의 유도체 3 내지 30 중량%;b) 3 to 30% by weight of ethylene glycol monoalkyl ethers or derivatives thereof;
c) 지방족 유기 아민 0.5 내지 10 중량%; 및c) 0.5 to 10 weight percent aliphatic organic amine; And
d) 잔량의 물을 포함하는 플라즈마 디스플레이 패널용 가소성 격벽 제거제 조성물을 제공한다. d) Provide a plastic barrier rib removal composition for a plasma display panel comprising a residual amount of water.
이하, 본 발명을 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail.
본 발명자들은 플라즈마 디스플레이 패널용 가소성 격벽 제거용 조성물에 대하여 연구하던 중, 알킬글리콜류 또는 그의 유도체와 에틸렌그릴콜모노알킬에테르류 또는 그의 유도체, 지방족 유기 아민을 최적범위로 포함하고 잔량의 물을 추가함으로써, 샌드 블라스팅 공정을 통해서 격벽을 형성한 막에 대해서 알칼리에 의한 팽윤성(swelling) 영향보다 소성 완료된 유전막과 가 소성된 격벽막 경계에 대한 침투력을 향상시키고 알칼리 기초 하에서 유기 용제와의 혼화성을 향상시킬 수 있음을 확인하고, 이를 토대로 본 발명을 완성하게 되었다. The inventors of the present invention, while studying the composition for removing the plastic barrier ribs for the plasma display panel, including the alkyl glycols or derivatives thereof, ethylene glycol monoalkyl ethers or derivatives thereof, aliphatic organic amines in the optimum range and adding the remaining amount of water This improves penetration into the boundary between the fired dielectric film and the fired partition film and improves the miscibility with the organic solvent under the alkaline basis, rather than the effect of alkali swelling on the film forming the partition wall through the sand blasting process. After confirming that the present invention can be completed based on this.
또한, 상기와 같이 최적 범위의 성분 및 함량의 조합을 통해 본 발명자들은 고농도 알칼리 제제의 사용에 따른 과량의 잔류물 제거 등과 같은 후속공정을 현저히 단축시킬 수 있는 가소성 격벽 제거제 조성물을 제공할 수 있게 되었다. In addition, through the combination of components and contents in the optimal range as described above, the present inventors can provide a plastic bulkhead remover composition that can significantly shorten the subsequent process, such as the removal of excess residues with the use of high concentration alkali formulation. .
본 발명의 플라즈마 디스플레이 패널용 가소성 유전막 제거제 조성물에서 상기 알킬글리콜류 또는 그의 유도체는 부틸글리콜, 부틸디글리콜, 에틸디글리콜, 부틸트리글리콜, 메틸디글리콜, 메틸트리글리콜, 메틸프로필렌디글리콜, 및 부톡시글리콜로 이루어진 군으로부터 1종 이상 선택된 것을 사용할 수 있으며, 특히 에틸디글리콜가 바람직하다. In the plastic dielectric film remover composition for a plasma display panel of the present invention, the alkylglycols or derivatives thereof include butylglycol, butyldiglycol, ethyldiglycol, butyltriglycol, methyldiglycol, methyltriglycol, methylpropylenediglycol, and One or more selected from the group consisting of oxyglycol may be used, and ethyl diglycol is particularly preferable.
상기 알킬글리콜류 또는 그의 유도체는 전체 조성물내에 3 내지 30 중량%, 보다 바람직하게는 5 내지 20 중량%, 좀더 바람직하게는 8 내지 15 중량%이다. The alkylglycols or derivatives thereof are 3 to 30% by weight, more preferably 5 to 20% by weight, still more preferably 8 to 15% by weight in the total composition.
또한, 본 발명의 에틸렌글리콜모노알킬에테르류는 지방족 유기 아민 등 다른 성분과 혼화성이 우수하고, 용해도가 우수한 극성용매이며, 특히 본 발명에서 비점이 180 ℃ 이상이며 물과 혼화성이 우수한 성분이 바람직하다. 본 발명의 에틸렌글리콜모노알킬에테르류 또는 그의 유도체는 에틸렌글리콜모노메틸에테르, 에틸렌글리콜모노에틸에테르, 에틸렌글리콜 모노프로필에테르, 및 에틸렌글리콜모노부틸에테르로 이루어진 군으로부터 1종 이상 선택된 것을 사용할 수 있으며, 특히 에틸렌글리콜모노메틸에테르가 바람직하다. In addition, the ethylene glycol monoalkyl ethers of the present invention are polar solvents having excellent miscibility with other components such as aliphatic organic amines and excellent solubility. desirable. Ethylene glycol monoalkyl ethers or derivatives thereof of the present invention may be used at least one selected from the group consisting of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, and ethylene glycol monobutyl ether, Especially ethylene glycol monomethyl ether is preferable.
상기 에틸렌글리콜모노알킬에테르류 또는 그의 유도체는 전체 조성물내에 3 내지 30 중량%, 보다 바람직하게는 5 내지 20 중량%, 좀더 바람직하게는 8 내지 15중량%이다. The ethylene glycol monoalkyl ethers or derivatives thereof are 3 to 30% by weight, more preferably 5 to 20% by weight, still more preferably 8 to 15% by weight in the total composition.
상기 지방족 유기 아민은 모노에탄올아민, 에틸렌디아민, 2-(2-아미노에톡시)에탄올, 2-(2-아미노에틸아미노)에탄올, 1-아미노-2-프로판올, 디에탄올아민, 이미노비스프로필아민, 2-메틸아미노 에탄올 및 트리에틸아미노에탄올로 이루어진 군으로부터 1 종 이상 선택된 것을 사용할 수 있으며, 특히 모노에탄올아민이 바람 직하다. The aliphatic organic amines are monoethanolamine, ethylenediamine, 2- (2-aminoethoxy) ethanol, 2- (2-aminoethylamino) ethanol, 1-amino-2-propanol, diethanolamine, iminobispropylamine , At least one selected from the group consisting of 2-methylamino ethanol and triethylaminoethanol can be used, and monoethanolamine is particularly preferable.
상기 지방족 유기 아민은 전체 조성물내에 0.5 내지 10 중량%, 보다 바람직하게는 2 내지 10 중량%, 좀더 바람직하게는 3 내지 8중량%이다. The aliphatic organic amine is 0.5 to 10% by weight, more preferably 2 to 10% by weight, more preferably 3 to 8% by weight in the total composition.
본 발명의 격벽 제거제 조성물의 각 성분이 최소 함량에 못미치는 경우, 각각 격벽의 팽윤(Swelling) 효과 및 쪼개짐 효과, 박리 효과 등에 해당하는 기능을 나타나지 않아 격벽 제거제로서 효과가 현저히 저하된다. 또한, 과다 함유의 경우 전체 조성물의 점성 증가로 인하여, 공정 적용시 자연 침투의 효과를 저해할 수 있으며, 경제적인 측면에서도 바람직하지 못하다. When each component of the partition remover composition of the present invention is less than the minimum content, there is no function corresponding to the swelling effect, the splitting effect, the peeling effect, and the like of the partition, respectively, and the effect is significantly reduced as the partition remover. In addition, in the case of overcontaining, due to the increase in viscosity of the entire composition, it may inhibit the effect of natural penetration in the application of the process, it is not preferable in terms of economics.
본 발명의 조성물은 pH 7 내지 9이내 범위의 염기성이 바람직하며, 이는 기존의 격벽 제거제 알칼리 농도를 5~6%로 pH 13 이상을 유지해야 했던 것에 비해 현저히 온화한 조건으로 사용할 수 있는 것이다. 이 같이, 본 발명의 가소성 격벽 제거제 조성물이 pH 7~9 정도 수준으로 현저히 낮은 pH를 유지함으로 해서 세척수 절대 사용량 감소를 구현 할 수 있다.Basicity of the composition of the present invention is preferably in the range of pH 7 to 9, which can be used under significantly mild conditions compared to the pH had to maintain a pH 13 or more to 5-6% of the existing barrier removal agent alkali concentration. As such, the plastic bulkhead remover composition of the present invention can implement a reduction in the absolute amount of washing water by maintaining a significantly low pH at the pH level of about 7-9.
본 발명은 또한, 플라즈마 디스플레이 패널용 격벽 형성 공정에서 플라즈마 디스플레이 패널용 격벽 형성 공정에서 기판에 격벽재료 페이스트를 도포한 후 가소성 단계로 건조한 후에 소성하기 전에, 제 1항에 따른 가소성 격벽 제거제 조성물을 이용하여 격벽을 에칭 또는 제거하는 단계를 포함하는 플라즈마 디스플레이 패널용 가소성 격벽 제거 방법을 제공한다. The present invention also uses the plastic bulkhead remover composition according to claim 1 before applying the partition material paste to a substrate in the plasma display panel partition wall forming step in the plasma display panel partitioning step and then drying it in a plastic step before firing. The present invention provides a method for removing a plastic barrier rib for a plasma display panel, the method including etching or removing the barrier rib.
본 발명의 격벽 제거제 조성물을 디핑(dipping) 또는 분사(spray) 방법으로 적용하여 격벽을 제거할 수 있다. The partition removing agent composition of the present invention may be applied by a dipping or spraying method to remove the partition.
상기 가소성 단계가 100 내지 120 ℃에서 수행되는 것으로 이후 소성단계 이전에 불량이 발생한 격벽을 제거하는 데 본 발명의 가소성 격벽 제거제 조성물을 적용할 수 있다. Since the plasticity step is performed at 100 to 120 ° C., the plastic bulkhead remover composition of the present invention may be applied to remove the partition wall in which a defect occurs before the sintering step.
이하, 본 발명의 이해를 돕기 위하여 바람직한 실시예를 제시하나, 하기 실시예는 본 발명을 예시하는 것일 뿐 본 발명의 범위가 하기 실시예에 한정되는 것은 아니다.Hereinafter, preferred examples are provided to help understanding of the present invention, but the following examples are merely to illustrate the present invention, and the scope of the present invention is not limited to the following examples.
실시예Example 1 내지 5 1 to 5
하기 표 1에 나타낸 바와 같은 함량 비율로, 에틸디글리콜(EDG), 에틸렌글리콜모노부틸에테르(BDG), 모노에탄올아민(MEA) 및 잔량의 물을 포함하는 격벽 제거제 조성물을 제조하였다. In a content ratio as shown in Table 1 below, a partition remover composition including ethyl diglycol (EDG), ethylene glycol monobutyl ether (BDG), monoethanolamine (MEA) and residual amount of water was prepared.
비교예Comparative example 1 One 내지3To3
하기 표 2에 나타낸 바와 같은 함량 비율로, 에틸디글리콜(EDG), 에틸렌글리콜모노부틸에테르(BDG), 수산화칼륨(KOH), 글루콘산 소다, 에티렌글리콜(EG) 및 잔량의 물로 구성되는 격벽 제거제 조성물을 제조하였다. A partition wall consisting of ethyl diglycol (EDG), ethylene glycol monobutyl ether (BDG), potassium hydroxide (KOH), soda gluconate, ethylene glycol (EG) and the residual amount of water as shown in Table 2 below. A remover composition was prepared.
시편의 제조Manufacture of Specimen
(시편 A 제조)(Manufacture of Specimen A)
Ag 전극층이 형성된 유리판 시편에 유전체 페이스트를 피복 건조 시킨 후에 가소제로 된 격벽재를 이용 다시 한번 피복 건조시켜 시편 A를 제조하였다. After coating and drying the dielectric paste on the glass plate specimen having the Ag electrode layer, the specimen A was prepared by coating and drying the barrier ribs made of a plasticizer once again.
(시편 B 제조)(Manufacture of Specimen B)
상기 시편 A에 DFR(dry film resist)을 이용하여 10 ㎛ 간격의 전개(developing) 과정을 거쳐 샌드블라스팅 또는 산에 의한 에칭으로 격벽을 형성 시킨 후 스트리핑을 적용하여 시편 B를 제조하였다. Specimen B was prepared by applying stripping to the specimen A by forming a partition by sandblasting or etching by acid through a process of developing in a 10 μm interval using a dry film resist (DFR).
격벽 제거제 시간 측정Bulkhead remover time measurement
상식 실시예 1~5 및 비교예 1~3에 따라 제조된 격벽 제거제 조성물을, 시편 A와 시편 B가 수직이 되게 고정시키고 노즐을 이용, 분무하여 격벽막이 제거되는 시간을 측정하였다.The partition wall remover compositions prepared according to the common examples 1 to 5 and Comparative Examples 1 to 3 were fixed such that specimen A and specimen B were perpendicular to each other and sprayed using a nozzle to measure the time for removal of the partition membrane.
시험결과, 본 발명의 실시예 1~5에서와 같이, 알킬글리콜류 3 내지 30 중량%, 에틸렌글리콜모노알킬에테르류 3 내지 30 중량%, 지방족 유기 아민 0.5 내지 10 중량%, 및 잔량의 물로 이루어진 격벽 제거제 조성물을 사용한 경우에, 고농도의 알카리를 사용한 비교예 1~3 보다 효과적으로 가소성 격벽 재료를 제거할 수 있었다. As a result of the test, as in Examples 1 to 5 of the present invention, 3 to 30% by weight of alkyl glycols, 3 to 30% by weight of ethylene glycol monoalkyl ethers, 0.5 to 10% by weight of aliphatic organic amines, and a balance of water When the partition remover composition was used, the plastic partition material was able to be removed more effectively than Comparative Examples 1 to 3 using a high concentration of alkali.
상기한 바와 같이, 본 발명의 플라즈마 디스플레이 패널용 가소성 격벽 제거제 조성물은 고농도의 알칼리 사용을 억제한 대신 침투력 부분을 강화한 지방족 유기 아민과 적정 글리콜류 용제를 사용하여 침투력 강화 특성을 개선하여 우수한 격벽 제거 효과를 제공할 할 수 있다. 특히, 고농도 알칼리 제제 사용시 야기될 수 있는 다량의 세척에 대한 잔류물 제거 관련 친환경적인 측면에서도 효과적인 개선 효과를 제공할 수 있다. As described above, the plastic bulkhead remover composition for a plasma display panel of the present invention improves the penetration strengthening property by using an aliphatic organic amine and an appropriate glycol solvent, which have enhanced the penetration part instead of inhibiting the use of a high concentration of alkali, and thus have an excellent bulkhead removing effect. Can be provided. In particular, it is possible to provide an effective improvement effect in terms of eco-friendliness related to the removal of residues for a large amount of washing that may be caused when using a high-alkali formulation.
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060108241A KR100774525B1 (en) | 2006-11-03 | 2006-11-03 | Pre- calsinated rib barrier repmover composition and method for removing dielectro layer using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060108241A KR100774525B1 (en) | 2006-11-03 | 2006-11-03 | Pre- calsinated rib barrier repmover composition and method for removing dielectro layer using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR100774525B1 true KR100774525B1 (en) | 2007-11-08 |
Family
ID=39061281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020060108241A KR100774525B1 (en) | 2006-11-03 | 2006-11-03 | Pre- calsinated rib barrier repmover composition and method for removing dielectro layer using the same |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100774525B1 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030079324A (en) * | 2002-04-03 | 2003-10-10 | 동우 화인켐 주식회사 | New cleansing solution comprising alcohol and ether for removing edge bead and cleansing method using the same |
| KR20050025316A (en) * | 2002-07-10 | 2005-03-14 | 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 | Compositions for removing etching residue and use thereof |
-
2006
- 2006-11-03 KR KR1020060108241A patent/KR100774525B1/en active IP Right Grant
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030079324A (en) * | 2002-04-03 | 2003-10-10 | 동우 화인켐 주식회사 | New cleansing solution comprising alcohol and ether for removing edge bead and cleansing method using the same |
| KR20050025316A (en) * | 2002-07-10 | 2005-03-14 | 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 | Compositions for removing etching residue and use thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0993016B1 (en) | Plasma display panel and method of disassembling the same | |
| KR102032321B1 (en) | A resist stripper composition for preventing unevenness | |
| CN110791389A (en) | Environment-friendly adhesive remover and preparation method and application thereof | |
| KR100774525B1 (en) | Pre- calsinated rib barrier repmover composition and method for removing dielectro layer using the same | |
| KR102392062B1 (en) | Resist stripper composition | |
| KR100864091B1 (en) | Pre- calsinated rib barrier and dielectro layer removable composition, and method for removing rib barrier and dielectro layer using the same | |
| KR100582448B1 (en) | composition to remove barrior rib in repairing plasma display panel | |
| KR101951860B1 (en) | Cleaning solution composition | |
| JP2004115783A (en) | Paste for use in partition, and method for manufacturing plasma display panel | |
| KR100798366B1 (en) | Pre- calsinated dielectro layer repmover composition and method for removing dielectro layer using the same | |
| KR20100024225A (en) | Composition for removing dielectric layer and barrier-rib of plasma display panel | |
| CN111781808A (en) | Resist stripping liquid composition, flat panel display substrate and manufacturing method thereof | |
| KR101174888B1 (en) | Material for forming barrier ribs, barrier ribs formed using the material and PDP comprising the barrier ribs | |
| KR20100100128A (en) | Composition for simultaneously removing dielectric layer and barrier-rib of plasma display panel | |
| JPH1025495A (en) | Cleaning agent for liquid crystal cell | |
| EP0860479B1 (en) | A stripping composition and method of inhibiting etching | |
| CN102109777B (en) | Regeneration liquid of plasma display barrier wall slurry | |
| KR102067248B1 (en) | Composition for removing paint film or gasket with aerosol type | |
| KR100696659B1 (en) | Plasma display panel, paste composition for repairing rib barrier thereof, and method for repairing damage of rib barrier used the same | |
| JP4172243B2 (en) | Method for manufacturing plasma display panel | |
| KR101769098B1 (en) | Photoresist ink removable composition, and method for removing photoresist using the same | |
| KR100652340B1 (en) | Method of making upper structure of plasma display panel and method of making plasma display panel thereby | |
| KR20050050793A (en) | Plasma display panel and the method of manufacturing the same | |
| KR100684824B1 (en) | Plasma display panel | |
| KR101130296B1 (en) | A photosensitive paste composition for a barrier rib of Plasma display panel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20120926 Year of fee payment: 6 |
|
| FPAY | Annual fee payment |
Payment date: 20130828 Year of fee payment: 7 |
|
| FPAY | Annual fee payment |
Payment date: 20150827 Year of fee payment: 9 |
|
| FPAY | Annual fee payment |
Payment date: 20170925 Year of fee payment: 11 |
|
| FPAY | Annual fee payment |
Payment date: 20181025 Year of fee payment: 12 |
|
| FPAY | Annual fee payment |
Payment date: 20190923 Year of fee payment: 13 |