KR100755067B1 - Chamber for manufacturing semiconductor device and manufacturing method of semiconductor device using the same - Google Patents

Abstract

A chamber for manufacturing a semiconductor device and a method of manufacturing a semiconductor device using the same are provided.

The present invention includes a chamber body, a wafer stage positioned within the chamber body, the wafer stage being operable, and a plurality of bias coils installed on the wafer stage, wherein the wafer stage is installed such that the plurality of bias coils are inwardly installed. The stage base, and one side is connected to the lower portion of the stage base, the other side includes a robot spindle formed to be connected to the stage driving unit.

Semiconductor devices, chambers, CVD, HDP,

Description

Chamber for manufacturing semiconductor device and method for manufacturing semiconductor device using same {Chamber for manufacturing semiconductor device and manufacturing method of semiconductor device using the same}

1 is a cross-sectional view schematically illustrating a chamber for manufacturing a semiconductor device according to an embodiment of the present invention.

2 is an enlarged view of a portion of FIG. 1.

3 is a view schematically illustrating a bottom surface of a wafer stage included in the semiconductor device manufacturing chamber illustrated in FIG. 1.

4 is a flowchart illustrating a method of manufacturing a semiconductor device in accordance with an embodiment of the present invention.

FIG. 5 is a diagram illustrating a wafer map obtained by measuring a test wafer after deposition and obtaining the measured data.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor fabrication equipment and, more particularly, to chambers provided for forming materials on wafers.

The chamber used in the semiconductor manufacturing process is a device for ejecting a source gas from the top or the bottom and depositing a predetermined material on the wafer by chemical reaction of the gas. This chamber is indispensable in the semiconductor manufacturing process and is used in many processes.

For example, chambers are also used in processes such as chemical vapor deposition (CVD) in semiconductor manufacturing processes. In general, a CVD chamber fixes a wafer at a predetermined position so as to be horizontal to the ground and performs a process.

At this time, the path where the source gas is deposited on the wafer is not exactly perpendicular to the wafer, and the density of the source gas in the chamber may not be uniform depending on the state of the chamber, the degree of contamination, and the shape and size of the injector for injecting the source gas. Can be.

In such a case, as the predetermined material is deposited on the wafer, the surface may be uneven or uneven.

In addition, in the semiconductor device thin film manufacturing process, step coverage and gap fill may be very important. Therefore, a bias is applied at the bottom of the wafer to improve the deposition rate. However, when a certain bias is applied without considering the wafer wrap, the deposited thin film, or the distribution of the reaction gas density, the uniformity of deposition and the precise gap fill are not satisfied.

Accordingly, there is a demand for development of a semiconductor device manufacturing chamber and a method of manufacturing a semiconductor device using the same, which allow more uniform deposition to be performed on a wafer.

SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a semiconductor device manufacturing chamber and a method of manufacturing a semiconductor device using the same, in which a more uniform deposition is performed.

According to an aspect of the present invention, there is provided a chamber for fabricating a semiconductor device, comprising a chamber body, a wafer stage disposed in the chamber body, the wafer stage being operable, and a plurality of bias coils installed in the wafer stage. present.

The wafer stage may include a stage base on which the plurality of bias coils are installed inward, and a robot spindle formed at one side thereof to be connected to the lower portion of the stage base and the other side thereof to be connected to the stage driver.

Each bias may be applied to the bias coil.

The present invention for achieving the technical problem is a step of depositing a test wafer in the chamber (recipe) by the recipe (recipe), measuring the characteristics of the test wafer is deposited and input the measurement data to the control unit, the measured A method of manufacturing a semiconductor device using a chamber for manufacturing a semiconductor device, the method comprising: reconstituting a recipe by a value, setting a state of a wafer stage by the reconstituted recipe, and performing a deposition process on a manufacturing wafer.

Setting the state of the wafer stage may be setting the tilt angle and the rotation angle of the wafer stage.

When setting the state of the wafer stage, a bias applied to each bias coil may also be set.

According to the present invention, it is possible to provide a chamber for manufacturing a semiconductor device in which a more uniform deposition is performed and a method for manufacturing a semiconductor device using the same.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Embodiments of the present invention may be modified in many different forms, and there is no reason to limit the scope of the present invention to be limited by the embodiments described below. Embodiments of the present invention are provided to fully explain the present invention to those skilled in the art.

1 is a cross-sectional view schematically illustrating a chamber for manufacturing a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a partially enlarged view of FIG. 1.

3 is a view schematically illustrating a bottom surface of a wafer stage included in the semiconductor device manufacturing chamber illustrated in FIG. 1.

Referring to FIG. 1, a chamber for manufacturing a semiconductor device of the present invention may be similar to a high density plasma chemical vapor deposition HDP CVD (CVD) chamber in general in appearance or shape.

The chamber body 10 may be formed in a structure that can completely block the inside and the outside. It is also provided with a wafer stage 30, also referred to as an electrostatic chuck, located in the chamber body 10 and on which the wafer 20 is placed. The wafer stage 30 of the present invention may be formed to be operable.

Therefore, the wafer stage 30 may include a stage base 35 in which a plurality of bias coils 40 are installed inwardly; And one side is connected to the lower portion of the stage base 35, the other side may be formed to include a robot spindle 50 formed to be connected to the stage drive unit (60).

Referring to FIG. 2, the wafer stage 30 according to the embodiment of the present invention may be described in detail. As shown in the figure, the stage gear unit 31 may be formed under the stage base 35, and the robot spindle gear unit 51 may be engaged with the stage gear unit 31 on the robot spindle 50. Can be formed. At this time, the stage gear unit 31 or the robot spindle gear unit 51 is directly or indirectly connected to the driving unit 60. In addition, although not shown, a stepping motor may be formed to be directly connected.

 Accordingly, the wafer stage 30 is rotatable by the robot spindle 50 connected to the driving unit 60, and is disposed on the stage gear unit 31 and the robot spindle 50 formed below the stage base 35. It can be tilted by the formed robot spindle gear unit 51.

Referring to FIG. 3, a plurality of bias coils 40 may be disposed on the bottom surface of the stage base 35. In this case, the bias coil 40 may set various positions and numbers according to the user's design. That is, various modifications are possible for the optimal process and may be replaced as necessary.

In addition, the bias coil 40 is omitted in the drawing as a conventional bias power (Bias power) is provided separately connected to the outside. In particular, the bias coil 40 can be formed so that the bias power is connected to each other, so that different bias voltages can be applied to all the bias coils 40.

In the present exemplary embodiment, the bias coil 40 is described as being formed on the bottom surface of the stage base 35, but may be formed to be internal to the stage base 35. That is, a plurality of holes may be formed and formed to be installed in the holes.

Hereinafter, a method of manufacturing a semiconductor device with a semiconductor device manufacturing chamber according to an embodiment of the present invention will be described.

4 is a flowchart illustrating a method of manufacturing a semiconductor device in accordance with an embodiment of the present invention.

FIG. 5 is a diagram illustrating a wafer map obtained by measuring a test wafer after deposition and obtaining the measured data.

Referring to FIG. 4, in the semiconductor device manufacturing method using the semiconductor device manufacturing chamber according to the embodiment of the present invention, the test wafer 20 is first deposited in the chamber body 10 by the recipe for a predetermined process. In this case, the bias applied to the bias coil 40 may be performed in the same state. That is, the bias voltage may not be applied to all the bias coils 40 or the same bias may be applied to all the bias coils 40. In addition, a bias voltage is not applied to a layer that does not need a gap fill, and a bias voltage is applied to a layer where a gap fill is important.

When the deposition on the test wafer 20 is completed, the characteristics of the test wafer 20 that have been deposited may be measured and the data may be input to the controller. (120) In this case, the characteristic of the wafer mainly measured is thickness. , Reflective index aka RI, sheet resistance aka Rs, and the like.

The controller may be a main server to which a general computer or personal terminal is connected. On the other hand, the control unit can calculate a data input by a conventional wafer analysis method to propose a new recipe. That is, as shown in FIG. 5, the controller may show the state of the wafer to the operator by various kinds of wafer analysis methods. In FIG. 5, the state of the wafer can be easily determined by displaying the measured value as a map.

Therefore, the operator may reconfigure the recipe by the measured value input by the test wafer 20. In other words, the operator may use the new recipe suggested by the controller as it is or use the new recipe presented by the controller. For reference, it is possible to reconfigure the recipe to be applied to the manufacture of the actual semiconductor device by adding or modifying.

It is now possible to reset the chamber including the state of the wafer stage by the reconstructed recipe. 140 In this case, setting the state of the wafer stage 30 may set the tilt angle and the rotation angle of the stage base 35. This can be set to a tilting angle and a rotation angle that can be performed by the reconstructed recipe to the optimum process. The bias applied to the bias coil 40 can also be set differently for each bias coil 40 according to the reconfigured recipe. Accordingly, the bias application may apply an optimum bias voltage considering the measurement value of the test wafer, the wafer wrap, and the distribution of the deposited thin film or reactive gas density. It is also possible to apply different suitable biases to each part of the wafer.

Now, the deposition process for the wafer for manufacturing is performed. (150) Therefore, in the conventional chamber, although the chamber had a uniform uniformity, thickness, RI, and RS range inherent to the recipe, the chamber for manufacturing a semiconductor device according to the present invention was used. This allows very high uniformity independent of the recipe. In addition, the characteristics of the film to be deposited can be evenly distributed throughout the wafer, thereby reducing product defects in the production of semiconductor devices and obtaining stable yields. Product performance, such as refresh rate, can also be achieved, as well as to extend the period of PM (Preventive Maintenance) inside the chamber.

In addition, the chamber for manufacturing a semiconductor device of the present invention can also be used for coating cameras, telescopes and spectacle lenses. That is, it is possible to form a uniform coating film on the spherical surface of the lens to obtain an improved image quality (image quality).

According to the present invention described above, it is possible to tilt and rotate the wafer stage of the chamber for semiconductor fabrication, and to apply an appropriate bias that is different for each part of the wafer, so that a very high level of uniform deposition is achieved throughout the wafer. I can't. As a result, defects in products can be reduced in the production of semiconductor devices, and stable yields can be obtained. In addition, product performance, such as refresh rate, can be obtained evenly, and the period of PM (Preventive Maintenance) in the chamber can be extended.

Although the present invention has been described in detail through the preferred embodiments, the present invention is not limited to the above embodiments, and various modifications may be made by those skilled in the art within the technical spirit of the present invention. Do.

Claims (6)

Chamber body; A wafer stage positioned in the chamber body and operable to place a wafer thereon; And A plurality of bias coils installed in the wafer stage; Chamber for manufacturing a semiconductor device comprising a. The method of claim 1, wherein the wafer stage A stage base installed to include the plurality of bias coils; And One side is connected to the lower portion of the stage base, the other side is a robot spindle formed to be connected to the stage drive unit Chamber for manufacturing a semiconductor device comprising a. The chamber of claim 1 or 2, wherein each bias is applied to the bias coil. Depositing a test wafer by recipe in the chamber; Measuring the characteristic of the test wafer which has been deposited and inputting measurement data to a control unit; Reconstructing the recipe by the measured value; Setting a state of the wafer stage by the reconstructed recipe; And Comprising the step of performing a deposition process on the wafer for manufacturing A semiconductor device manufacturing method using a semiconductor device manufacturing chamber. The method of claim 4, wherein the setting of the state of the wafer stage sets a tilting angle and a rotation angle of the wafer stage. 6. The method of claim 5, further comprising setting biases applied to respective bias coils when setting the state of the wafer stage.

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