KR100750406B1 - Powder removing device of scrubber for processing semiconductor by-product gas - Google Patents

Abstract

The present invention relates to a powder removal apparatus of a semiconductor waste gas treatment scrubber, the technical problem to be solved is to provide a gas pulse wave having a predetermined pressure on the inner wall of the combustion chamber, generated during the semiconductor manufacturing process on the inner wall of the combustion chamber and forced This is to prevent various powders formed by combustion from being deposited.

To this end, the gist of the solution according to the present invention is introduced into the waste gas generated during the semiconductor manufacturing process, the burner to burn the waste gas, and the burner is combined, the powder generated by the waste gas is burned by the burner falls to the bottom In the scrubber for semiconductor waste gas treatment comprising a combustion chamber, the powder of the semiconductor waste gas treatment scrubber is further provided with a powder removal gas supply unit for providing a gas of a predetermined pressure to the combustion chamber to prevent the powder deposited on the inner wall of the combustion chamber. A removal device is disclosed.

Semiconductor waste gas, burner, combustion chamber, powder, gas nozzle, pulse

Description

Powder removing device of scrubber for processing semiconductor by-product gas}

1 is a perspective view illustrating a scrubber for processing semiconductor waste gas to which a powder removing device according to the present invention is applied.

Figures 2a to 2c is a longitudinal sectional view, a plan view and a bottom view showing the combustion chamber of the scrubber for processing semiconductor waste gas equipped with a powder removal apparatus according to the present invention.

3A and 3B are left longitudinal cross-sectional and cross-sectional views showing a combustion chamber of a scrubber for processing semiconductor waste gas equipped with a powder removing apparatus according to the present invention.

Figures 4a and 4b is a right longitudinal cross-sectional view and a cross-sectional view showing a combustion chamber of a scrubber for processing semiconductor waste gas equipped with a powder removal apparatus according to the present invention.

<Description of Symbols for Main Parts of Drawings>

100; Scrubber for semiconductor waste gas treatment

110; Waste gas supply pipe 120; burner

121; Fuel supply pipe 122; Oxygen supply pipe

130; Combustion chamber 131; Top cover

132; Inner chamber 132a; Inner upper chamber

132b; Internal lower chamber 133; Outer chamber

133a; Outer upper chamber 133b; Outer lower chamber

134; Sealing ring 135; Rubber ring

136; Cooling tube 137; Pilot burner

138; Ultraviolet sensor 139; Fixing member

140; Separator 150; Countertop tank

155; Connector 160; Wet tower

170; A powder supply gas supply unit 171; Inert gas supply line

172; Gas tube 173; Gas nozzle

173a; Straight portion 173b; Bend

P; powder

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a powder removal apparatus of a semiconductor waste gas treatment scrubber, and more particularly, to provide a pulse wave having a predetermined pressure on an inner wall of a combustion chamber, which is generated during a semiconductor manufacturing process and forcedly burned on an inner wall of a combustion chamber. The present invention relates to a powder removal apparatus of a scrubber for processing semiconductor waste gas, in which powder is not deposited.

In general, various kinds of reaction gases used for forming or etching thin films on a wafer in a semiconductor manufacturing process include oxidizing components, flammable components, and toxic components. ) Is not only harmful to the human body but also causes environmental pollution. As a result, a scrubber is installed in the exhaust line of the semiconductor facility to remove the oxidized component, the flammable component, the toxic component, and the like of the waste gas and to discharge it to the atmosphere.

As such, scrubbers for removing semiconductor waste gases in the semiconductor manufacturing process can be classified into three categories. First, indirect combustion wet type, it is also called heatwet scrubber to burn waste gas by induction heating method and filter by water once more. Second, as a wet type, the waste gas is collected using water, and then the wet scrubber is also used to purify the water. Third, as a direct combustion wet type, it is also called burnwet by burning waste gas with hot flame and capturing it with water.

Here, the semiconductor waste gas is mainly the gas containing silicon, which has the characteristic of generating a large amount of powder when using the wet wet scrubber or burn wet method. An example of such a powder generating chemical formula is shown below.

SiH ₄ (gas) + 2O _2- > SiO ₂ (powder) + 2H ₂ O

By the way, the powder generated after the combustion of the semiconductor waste gas as described above gradually deposits on the inner wall of the combustion chamber gradually due to the attraction and frictional force, and has a more rigid structure.

Therefore, conventionally, there has been an attempt to prevent the deposition of such powder by installing a structure called a scraper inside the combustion chamber in which the burner is mounted. However, as the powder produced after combustion is solidified by being attached to the scraper driving unit, the operation of the scraper is eventually stopped, and thus, there is an inconvenience of manually cleaning the inside of the combustion chamber after a certain time. Of course, the scraper did not work over time, and thus became practically useless. Typically, these combustion chambers should be cleaned once every three to four days, regardless of whether or not the scraper is mounted.

In addition, a single semiconductor manufacturing line is equipped with dozens or hundreds of scrubbers. As the cleaning cycle is too short, as described above, the secondary problem of delaying the semiconductor manufacturing process time or stopping the semiconductor manufacturing process for a predetermined time is also required. have.

The present invention is to overcome the above-mentioned conventional problems, an object of the present invention is to provide a pulse wave having a predetermined pressure on the inner wall of the combustion chamber, a variety of generated by forced combustion during the semiconductor manufacturing process on the inner wall of the combustion chamber An object of the present invention is to provide a powder removal apparatus for a scrubber for processing semiconductor waste gas in which powder is not deposited.

In order to achieve the above object, the present invention is the waste gas generated during the semiconductor manufacturing process is introduced, the burner for burning the waste gas, the burner is combined, the powder produced by the waste gas is burned by the burner is lowered In the scrubber for processing a semiconductor waste gas consisting of a combustion chamber falling to the, the combustion chamber may be further provided with a powder supply gas supply unit for providing a gas of a predetermined pressure, so that powder is not deposited on the inner wall of the combustion chamber. .

Here, the powder removal gas supply unit is connected to the gas supply pipe and the gas supply pipe coupled to the outside of the combustion chamber, and at the same time coupled to the gas tube and a gas tube formed in a ring shape along the inner wall of the combustion chamber It may include at least one gas nozzle extending a predetermined length inside the combustion chamber.

In addition, the gas nozzle is a straight portion formed horizontally on the inner wall of the combustion chamber, and the bent portion bent toward the inner wall of the combustion chamber at the end of the straight portion so that the gas to impact the inner wall of the combustion chamber It can be made, including.

In addition, four gas nozzles may be formed at intervals of 90 ° with respect to the center of the combustion chamber.

In addition, the gas nozzle may be formed to be inclined at a predetermined angle with respect to the vertical direction of the combustion chamber so that gas may be supplied in a whirlwind form in the combustion chamber.

In addition, the gas supplied through the powder removal gas supply unit may be an inert gas.

In addition, the gas supplied through the powder removal gas supply unit may be nitrogen gas.

In addition, the gas supplied through the powder removal gas supply unit may be provided in a pulse form.

In addition, the pressure of the gas supplied through the powder removal gas supply may be 1 ~ 10kgf / cm ² .

In addition, the gas supplied through the powder removal gas supply unit may be continuously supplied in the form of a pulse during the operation of the burner.

In addition, the gas supplied through the powder removal gas supply unit may be supplied in the form of a pulse and may be intermittently supplied for a predetermined time.

In addition, the gas supplied through the powder removal gas supply unit may be supplied in the form of a pulse when the pressure of the combustion chamber approaches the atmospheric pressure.

The combustion chamber further includes an upper cover to which the burner is coupled to the center, an inner chamber coupled to the lower end of the upper cover as the outer periphery of the burner, and a lower cover of the upper cover as the outer periphery of the inner chamber. It may comprise an external chamber.

The powder removal gas supply unit may include a gas supply pipe coupled to the outside of the upper cover of the combustion chamber, a gas tube connected to the gas supply pipe and formed in a ring shape along a lower surface of the upper cover of the combustion chamber; At the same time coupled to the gas tube, it may comprise at least one gas nozzle extending a predetermined length in a direction parallel to the inner chamber of the combustion chamber.

In addition, a sealing ring is further coupled between the upper cover and the inner chamber, the gas supply pipe is coupled through the sealing ring, and the gas tube may be formed in a space between the sealing ring and the inner chamber.

As described above, the powder removal apparatus of the semiconductor waste gas treatment scrubber according to the present invention provides an inert gas (for example, nitrogen gas) in the form of a pulse inside the combustion chamber, and the inert gas is provided on the inner wall of the combustion chamber. By giving a predetermined impact, it is possible to minimize the phenomenon that the powder deposited on the inner wall of the combustion chamber eventually.

In addition, the powder removal apparatus of the semiconductor waste gas treatment scrubber according to the present invention is provided with a plurality of injection nozzles in which the inert gas is injected at a predetermined interval, and at the same time inclined at a predetermined angle with respect to the vertical direction of the combustion chamber, Inside the inert gas naturally falls into a whirlwind. Therefore, the powder which may be deposited on the inner wall of the combustion chamber is dropped more efficiently while being removed more efficiently.

In fact, the present invention was confirmed that by the supply of such an inert gas, the cleaning interval of the combustion chamber is extended from 3 to 4 days to 3 to 4 months.

In addition, the powder removal apparatus of the semiconductor waste gas treatment scrubber according to the present invention can prevent unnecessary waste of inert gas by supplying the inert gas into the combustion chamber in various forms according to the type of waste gas. For example, when waste gas containing a large amount of silicon is introduced, inert gas is continuously supplied in the form of a pulse during the operation of the burner, and when inert gas containing a small amount of silicon is introduced, the inert gas is intermittently supplied for a predetermined time or Alternatively, when the internal pressure of the combustion chamber is near atmospheric pressure, by supplying an inert gas, it is possible to minimize the usage of the inert gas.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings such that those skilled in the art may easily implement the present invention.

1, there is shown a perspective view of a scrubber for semiconductor waste gas treatment to which a powder removal apparatus according to the present invention is applied.

As shown, the semiconductor waste gas treatment scrubber 100 includes a plurality of waste gas supply pipes 110 connected to a semiconductor manufacturing process line, a burner 120 connected to the waste gas supply pipes 110, and a burner 120 coupled to the burner 120. Combination chamber 140 and the separator 140 is coupled to the lower end of the combustion chamber 130 to move the combustion chamber 130 to one side to be separated, and the combustion chamber 130 and the separator 140 The water tank tank 150 coupled to the lower end to collect and settle the powder produced in the combustion chamber 130 in water, and the combustion chamber 130 by being coupled together to the combustion chamber 130 and the water tank tank 150, It includes a wet tower 160 to collect the fine powder passed through the water once again. Here, the combustion chamber 130 and the wet tower 160 are interconnected by a connecting pipe 155, the discharge pipe 161 is formed on the upper portion of the wet tower 160.

The semiconductor waste gas treatment scrubber 100 is supplied with various kinds of waste gases from the semiconductor manufacturing process line through the waste gas supply pipe 110. In this way, the waste gas supplied through the waste gas supply pipe 110 is supplied to the combustion chamber 130 through the burner 120. The waste gas inside the combustion chamber 130 is burned by the burner 120, and a large amount of powder is produced by this combustion. Among the powders as described above, the relatively heavy powder falls down by gravity, and the dropped powder is collected and settled in water in the lower tank tank 150. On the other hand, the relatively light fine powder that does not fall into the tank tank 150 is moved to the wet tower 160 through a connection pipe 155 connected between the combustion chamber 130 and the wet tower 160. As such, the fine powder moved to the wet tower 160 is collected by the water in the wet tower 160 once again, and the collected fine powder falls back to the tank tank 150 to be collected and precipitated in water. Of course, the purified waste gas passing through the wet tower 160 is discharged into the atmosphere through the discharge pipe 161.

Here, the semiconductor waste gas treatment scrubber 100 is only one example for understanding the present invention, and the structure of the scrubber 100 does not limit the present invention. That is, the powder removal apparatus according to the present invention is because it can be mounted and used in the scrubber 100 of other types and structures as well as the scrubber 100 for the semiconductor waste gas treatment.

2A to 2C, a longitudinal sectional view, a plan view, and a bottom view of a combustion chamber in a scrubber for processing semiconductor waste gas equipped with a powder removal apparatus according to the present invention are shown.

As shown, the present invention is characterized in that the powder supply gas supply unit 170 is further installed in the combustion chamber 130 having the burner 120. That is, the powder removing apparatus according to the present invention means the powder supply gas supply unit 170.

First, the burner 120 and the combustion chamber 130 will be briefly described.

The burner 120 is installed at an approximately upper portion of the combustion chamber 130, and a plurality of waste gas supply pipes 110 are connected to the burner 120 from the upper side to the lower side. Therefore, the waste gas through the waste gas supply pipe 110 is directly supplied into the combustion chamber 130 through the burner 120. In addition, the burner 120 is connected to a fuel supply pipe 121 and an oxygen supply pipe 122, respectively. Therefore, fuel and oxygen are respectively supplied through the burner 120, so that when the ignition occurs around the burner 120, the burner 120 generates a predetermined flame. Of course, the flame causes the waste gas to be burned to produce powder P. Here, the fuel may be LNG, LPG or equivalents thereof, but the type of the fuel is not limited thereto.

Subsequently, the combustion chamber 130 includes a top cover 131, an inner chamber 132, and an outer chamber 133. The inner chamber 132 again includes an inner upper chamber 132a and an inner lower chamber 132b. In addition, the outer chamber 133 also includes an outer upper chamber 133a and an outer lower chamber 133b. The gas supply unit 170 for removing the powder P to be described below is installed in the upper cover 131, which will be described in detail below.

The burner 120 having the above-described structure is coupled to the center of the upper cover 131. In addition, the inner upper chamber 132a of the inner chamber 132 is coupled to the lower end of the upper cover 131, which is the outer circumference of the burner 120, and the inner lower chamber 132b is again connected to the lower end of the inner upper chamber 132a. ) Are combined. In addition, the outer upper chamber 133a of the outer chamber 133 is coupled to the lower end of the upper cover 131, which is the outer circumference of the inner chamber 132, and the lower lower chamber (the lower lower chamber) is further connected to the lower end of the outer upper chamber 133a. 133b) is combined. In addition, a fixing member 139 is coupled between the inner lower chamber 132b and the outer lower chamber 133b to fix both together. With this structure, the present invention can be separated from the inner upper chamber 132a and the outer upper chamber 133a by integrating the inner lower chamber 132b and the outer lower chamber 133b.

Here, a sealing ring 134 is further interposed between the upper cover 131 and the inner upper chamber 132a of the inner chamber 132, and an upper cover 131 and an inner side of the sealing ring 134. The rubber ring 135 to be in close contact is coupled. In addition, a cooling tube 136 is coupled between the upper cover 131 and the outer upper chamber 133a of the outer chamber 133, and the coolant is supplied through the cooling tube 136 to burner ( The combustion chamber 130 is maintained below a predetermined temperature during the operation of 120. Furthermore, a pilot burner 137 and an ultraviolet sensor 138 are provided through the outer upper chamber 133a and the inner upper chamber 132a, respectively. The pilot burner 137 serves to induce the initial ignition of the burner 120, the ultraviolet sensor 138 serves to sense whether the ignition. Of course, when the ignition is confirmed by the ultraviolet sensor 138, the pilot burner 137 stops operation. Furthermore, the tank tank 150 described above is coupled to a lower end of the combustion chamber 130 through a predetermined structure.

Subsequently, the powder removal gas supply unit 170 includes a gas supply pipe 171, a gas tube 172, and at least one gas nozzle 173.

The gas supply pipe 171 is coupled to the upper cover 131 of the combustion chamber 130 and passes through the sealing ring 134 provided between the upper cover 131 and the inner upper chamber 132a.

In addition, the gas tube 172 is formed in a substantially rectangular shape in cross section between the sealing ring 134 and the inner upper chamber 132a.

In addition, the gas nozzle 173 is coupled to the gas tube 172 and extends a predetermined length in the lower direction inside the inner upper chamber 132a. More specifically, the gas nozzle 173 has a straight portion 173a formed horizontally on the inner wall of the combustion chamber 130 and the straight portion (1) so that gas may impact the inner wall of the combustion chamber 130. A bent portion 173b bent toward an inner wall of the combustion chamber 130 at the end of 173a. In addition, four gas nozzles 173 may be formed at intervals of about 90 ° with respect to the center of the combustion chamber 130. Of course, the number of such gas nozzles 173 is only one example, and the present invention is not limited to the number of such gas nozzles 173. In addition, the gas nozzle 173 is the combustion chamber 130 so that the gas can be supplied in a whirlpool form in the combustion chamber 130 (that is, the inner upper chamber 132a and the inner lower chamber 132b). It may be formed to be inclined or inclined at an angle with respect to the vertical direction of the.

On the other hand, the gas supplied into the inner chamber 132 through the powder removal gas supply unit 170 is preferably used an inert gas that does not react with the semiconductor waste gas. More preferably, it is preferable to use nitrogen gas which is most frequently used in the semiconductor manufacturing process.

In addition, the gas supplied into the inner chamber 132 through the powder removal gas supply unit 170 may be provided in a substantially pulse form. This is because, when supplying a gas having a pulse flow rate rather than continuously supplying a gas having a constant flow rate, the impact amount transmitted to the inner wall of the inner chamber 132 is larger. Of course, the impact of the inner chamber 132 is to be deposited on it or already deposited powder (P) is separated from the inner wall and free fall down.

More specifically, the pressure of the inert gas supplied through the powder removal gas supply unit 170 is preferably about 1 ~ 10kgf / cm ² . That is, the present inventors vary the pressure of the inert gas, and comprehensively observe the degree of deposition or removal of the powder P and the stability of the device. As a result, when the pressure of the inert gas is 1 kgf / cm ² or less, the device stability is the most. Excellent but has the disadvantage that the powder (P) is relatively well deposited or not removed well, if the pressure of the inert gas is more than 10kgf / cm ² powder (P) is not deposited or removed well, but the device stability is reduced It was found. Here, the stability of the device means that a constant pressure is generated by the supply of an inert gas, so as to reduce the suction rate of semiconductor waste gas, fuel, and the like. Of course, the negative pressure is always applied to the inside of the combustion chamber 130.

Subsequently, the gas supplied through the powder removal gas supply unit 170 is actually a little depending on the type and amount of semiconductor waste gas flowing into the combustion chamber 130 through the waste gas supply pipe 110 and the burner 120. It can be supplied in other forms.

For example, when a large amount of silicon mixed waste gas is introduced, a large amount of powder (P) is formed, the inner chamber 132 by always supplying the inert gas in the form of a pulse during the operation of the burner 120, It is good not to deposit the powder (P) on the inner wall of the.

In addition, when a small amount of silicon mixed waste gas flows in, a small amount of powder P is formed, so that the inert gas is pulsed and intermittently supplied only for a predetermined time. That is, the powder P is deposited on the inner wall of the inner chamber 132 even when the inert gas for removing powder is not continuously supplied while the burner 120 is operated, and the inert gas is supplied only for a predetermined time period. ) Is well removed.

In addition, in some cases, the inert gas may be supplied only when the powder P is deposited over a predetermined thickness on the inner wall of the combustion chamber 130. That is, the inert gas is supplied to the combustion chamber 130 for a predetermined time only when the pressure of the combustion chamber 130 is near atmospheric pressure, so that the powder P deposited on the inner wall is removed. Of course, at this time, in order to sense the pressure of the combustion chamber 130, in particular the internal chamber 132, it is natural that the internal chamber 132 is provided with a pressure sensor (not shown).

In FIG. 2B, reference numeral h denotes a lift handle installed at the outer lower chamber 133b to allow an operator to take out the outer lower chamber 133b and the inner lower chamber 132b integrally. In addition, reference numeral c denotes a case of the waste gas treatment device, and reference numeral b denotes a bracket for coupling the combustion chamber to the case.

3A and 3B, a left longitudinal cross-sectional view and a cross-sectional view of a combustion chamber in a scrubber for processing semiconductor waste gas equipped with a powder removal apparatus according to the present invention are shown.

As shown in the present invention, at least one lift handle h is disposed in front of the outer lower chamber 133b of the outer chamber 133, and the outer upper chamber 133a and the inner upper chamber 132a are disposed. The pilot burner 137 and the ultraviolet sensor 138 are penetrated to penetrate. Of course, the burner 120 is coupled to approximately the center of the upper cover 131. All other components have been described with reference to FIGS. 2A to 2B, and thus, further descriptions thereof will be omitted.

4A and 4B show a right longitudinal cross section and a cross sectional view of a combustion chamber of a scrubber for processing semiconductor waste gas equipped with a powder removal apparatus according to the present invention.

As shown in the present invention, the pilot burner 137 and the ultraviolet sensor 138 are installed through the outer upper chamber 133a and the inner upper chamber 132a, and the burner 120 includes the upper cover 131. It is installed in the center of approximately. In addition, the fixing member 139 of a predetermined length is coupled from the outer lower chamber 133b toward the inside thereof, and the inner lower chamber 132b is coupled to the fixing member 139. All other components have been described with reference to FIGS. 2A to 2B, and further descriptions thereof will be omitted.

The powder removal device of the semiconductor waste gas treatment scrubber 100 according to the present invention by the above configuration is operated as follows.

First, fuel and oxygen are supplied from the fuel supply pipe 121 and the oxygen supply pipe 122 connected to the burner 120, and then the pilot burner 137 operates to generate sparks from the burner 120. Of course, the ignition state of the burner 120 is detected by the ultraviolet sensor 138, and the operation of the pilot burner 137 is stopped after the ignition of the burner 120 is surely performed.

Subsequently, the semiconductor waste gas from the semiconductor manufacturing process line is supplied through the waste gas supply pipe 110 connected to the burner 120. The waste gas is introduced into the inner chamber 132 of the combustion chamber 130 through the burner 120. Of course, the waste gas introduced into the inner chamber 132 is burned by the flame of the burner 120, and generates a certain amount of powder (P).

Here, the cooling water is supplied through the cooling tube 136 installed in the outer chamber 133 and the upper cover 131 so that the cooling water flows along the outer wall of the inner chamber 132 and thus the inner chamber 132. Does not rise above a predetermined temperature.

On the other hand, the powder removal gas supply unit 170 according to the present invention also operates during this operation. That is, an inert gas such as nitrogen is supplied through the gas supply pipe 171, and the inert gas thus supplied is eventually supplied into the inner chamber 132 through the gas tube 172 and the gas nozzle 173.

In this case, the gas nozzle 173 includes a straight portion 173a and a bent portion 173b. Since the end direction of the bent portion 173b is substantially toward the inner wall of the inner chamber 132, the gas nozzle 173a. Inert gas from 173 directly strikes the inner wall of the inner chamber 132. That is, a predetermined impact amount is transmitted to the inner wall of the inner chamber 132. Accordingly, the powder P, which is about to be deposited on the inner wall of the inner chamber 132 or is deposited, is separated from the inner chamber 132 and dropped to the bottom.

In addition, since four gas nozzles 173 are provided at the same time as the center of the inner chamber 132 and at equal intervals, the gas nozzles 173 are inclined at a predetermined angle with respect to the vertical direction of the inner chamber 132. Inert gas through the nozzle 173 is supplied to the inner chamber 132 as if it is a whirlwind. Therefore, the powder P deposited on the inner wall of the inner chamber 132 is more efficiently removed and falls.

Subsequently, as described above, the inert gas supplied into the inner chamber 132 through the powder removal gas supply unit 170 is provided in a substantially pulse form. Therefore, a predetermined impact is applied to the inner wall of the inner chamber 132 more efficiently due to the pulsed inert gas, and eventually the powder P which is about to be deposited or is already deposited is separated and freely falls downward. .

In addition, the inert gas supplied through the powder removal gas supply unit 170 may be continuously supplied during the operation of the burner 120 when a waste gas containing a large amount of silicon is introduced therein. That is, in the case of waste gas in which a large amount of silicon is mixed, a large amount of powder P is generated by combustion by the burner 120, and thus, the inert gas is continuously supplied during the operation of the burner 120. Of course, the inert gas is also supplied in the form of a pulse at this time.

In addition, the inert gas supplied through the powder removal gas supply unit 170 may be intermittently supplied only for a predetermined time when a waste gas containing a small amount of silicon is introduced therein. That is, in the case of the waste gas in which a small amount of silicon is mixed, since a small amount of powder P is generated by combustion by the burner 120, it is not necessary to continuously supply an inert gas during the operation of the burner 120, and for a predetermined time. Even when the inert gas is supplied, the powder P on the inner wall of the inner chamber 132 can be sufficiently removed. Of course, the inert gas is also supplied in the form of a pulse at this time.

In addition, the inert gas supplied through the powder removal gas supply unit 170 may be supplied when the internal pressure of the inner chamber 132 is about approximately atmospheric pressure after the internal pressure of the inner chamber 132 is sensed. have. That is, the internal pressure of the inner chamber 132 is about atmospheric pressure, which means that the powder P is deposited on the inner wall by a predetermined thickness or more, thereby reducing the inner volume of the inner chamber 132. Therefore, at this time, by supplying an inert gas into the inner chamber 132 in the form of a pulse, so that the powder (P) deposited on its inner wall is removed.

As described above, the powder removal apparatus of the semiconductor waste gas treatment scrubber according to the present invention provides an inert gas (for example, nitrogen gas) in the form of a pulse inside the combustion chamber, and this inert gas is also provided on the inner wall of the combustion chamber. By imparting a predetermined impact, the powder does not eventually deposit on the inner wall of the combustion chamber.

In addition, the powder removal apparatus of the semiconductor waste gas treatment scrubber according to the present invention is provided with a plurality of injection nozzles in which the inert gas is injected at a predetermined interval, and at the same time inclined at a predetermined angle with respect to the vertical direction of the combustion chamber, Inside the inert gas is naturally provided in the form of a whirlwind. Thus, the powder that can be deposited on the inner wall of the combustion chamber is removed and separated more efficiently.

Indeed, the present invention can confirm that by the supply of such inert gas, the cleaning interval of the combustion chamber is extended from 3 to 4 days to 3 to 4 months.

In addition, the powder removal apparatus of the semiconductor waste gas treatment scrubber according to the present invention can prevent unnecessary waste of the inert gas by supplying the inert gas into the combustion chamber in various forms according to the kind of the waste gas. For example, when waste gas containing a large amount of silicon is introduced, inert gas is continuously supplied in the form of a pulse during the operation of the burner, and when inert gas containing a small amount of silicon is introduced, the inert gas is intermittently supplied for a predetermined time or Or supplying an inert gas when the internal pressure of the combustion chamber is near atmospheric pressure, thereby minimizing the amount of the inert gas used.

What has been described above is just one embodiment for carrying out the powder removal apparatus of the semiconductor waste gas treatment scrubber according to the present invention, the present invention is not limited to the above-described embodiment, as claimed in the following claims As described above, any person having ordinary knowledge in the field of the present invention without departing from the gist of the present invention will have the technical spirit of the present invention to the extent that various modifications can be made.

Claims (15)

A semiconductor waste gas treatment comprising a burner in which waste gas generated during a semiconductor manufacturing process is introduced, and a burner that burns the waste gas, and a combustion chamber in which powder generated by burning the waste gas by the burner falls down at the same time as the burner is combined. In the scrubber for The combustion chamber is further provided with a gas supply for removing powder to provide a gas, so that powder is not deposited on the inner wall of the combustion chamber, The powder removal gas supply unit is connected to the gas supply pipe and the gas supply pipe coupled to the outside of the combustion chamber, a gas tube formed in a ring shape along the inner wall of the combustion chamber, and coupled to the gas tube, The apparatus for removing a powder of a scrubber for processing semiconductor waste gases, comprising at least one gas nozzle extending in the combustion chamber. delete The method of claim 1, wherein the gas nozzle A straight portion formed horizontally on the inner wall of the combustion chamber, And a bent portion that is bent toward the inner wall of the combustion chamber at the end of the straight portion so that the gas can impact the inner wall of the combustion chamber. The powder removal apparatus of the scrubber for semiconductor waste gas treatment according to claim 1, wherein four gas nozzles are formed at intervals of 90 ° about the center of the combustion chamber. The apparatus of claim 1, wherein the gas nozzle is formed to be inclined with respect to a vertical direction of the combustion chamber so that gas may be supplied in a whirlwind form in the combustion chamber. The powder removal apparatus of the scrubber for semiconductor waste gas processing according to claim 1, wherein the gas supplied through the powder removal gas supply unit is an inert gas. The powder removing apparatus of the scrubber for semiconductor waste gas treatment according to claim 1, wherein the gas supplied through the powder removing gas supply unit is nitrogen gas. The powder removal apparatus of the scrubber for semiconductor waste gas treatment according to claim 1, wherein the gas supplied through the powder removal gas supply unit is provided in a pulse form. The powder removing apparatus of the scrubber for semiconductor waste gas treatment according to claim 1, wherein the pressure of the gas supplied through the powder removing gas supply unit is 1 to 10 kgf / cm ² . The powder removal apparatus of the scrubber for semiconductor waste gas treatment according to claim 1, wherein the gas supplied through the powder removal gas supply unit is continuously supplied in a pulse form during operation of the burner. The powder removal apparatus of the scrubber for semiconductor waste gas treatment according to claim 1, wherein the gas supplied through the powder removal gas supply unit is supplied in a pulse form and intermittently supplied. The apparatus of claim 1, wherein the gas supplied through the powder removal gas supply unit is supplied in the form of a pulse when the pressure of the combustion chamber approaches the atmospheric pressure. The method of claim 1, wherein the combustion chamber An upper cover to which the burner is coupled to the center; An inner chamber coupled to a lower end of the upper cover as an outer periphery of the burner, And an outer chamber coupled to the lower end of the upper cover as an outer circumference of the inner chamber. The method of claim 13, wherein the powder supply gas supply unit A gas supply pipe coupled to an outer side of an upper cover of the combustion chamber; A gas tube connected to the gas supply pipe and formed in a ring shape along a lower surface of the upper cover of the combustion chamber; And at least one gas nozzle coupled to the gas tube and extending in a direction parallel to an inner chamber of the combustion chamber. The method of claim 14, wherein the sealing ring is further coupled between the upper cover and the inner chamber, the gas supply pipe is coupled through the sealing ring, the gas tube is formed in the space between the sealing ring and the inner chamber The powder removal apparatus of the scrubber for semiconductor waste gas processing characterized by the above-mentioned.

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