KR100735787B1 - Method for Polishing a Memory or Rigid Disk with an Amino Acid-Containing Composition - Google Patents

Abstract

A method of planarizing or polishing the surface of a memory or rigid disk comprising abrading at least a portion of the surface with (i) a polishing composition comprising an oxidizing agent selected from the group consisting of persulfates and peroxides, an amino acid, and water, and (ii) an abrasive.

Description

Method for Polishing a Memory or Rigid Disk with an Amino Acid-Containing Composition}

The present invention relates to a method of planarizing or polishing a substrate, in particular a memory or rigid disk.

Due to the demand for increased storage capacity of memory or fixed disks, and the tendency of miniaturization of memory or fixed disks (because computer manufacturers want smaller hard drives), flattening or polishing of memory or fixed disks to ensure maximum performance There is a continuing emphasis on the importance of the method of making such discs. Although there are several chemical-mechanical polishing (CMP) compositions and methods used in connection with the manufacture of semiconductor devices, conventional CMP methods or commercially available CMP compositions that are well suited for planarizing or polishing memory or fixed disks. Is almost absent.

In particular, such polishing compositions and / or methods can result in less satisfactory polishing rates and higher surface defects when applied to memory or fixed disks. The performance of fixed or memory disks is directly related to its surface quality. Thus, it is important for polishing compositions and methods to minimize surface defects of the memory or fixed disk after planarization or polishing, while maximizing the removal rate or removal rate.

Many attempts have been made to improve the removal rate of memory or fixed disks during polishing, while minimizing defects in the polished surface during planarization or polishing. For example, US Pat. No. 4,769,046 discloses a method of polishing a nickel plated layer on a fixed disk using a composition comprising aluminum oxide and a polishing accelerator such as nickel nitrate, aluminum nitrate or mixtures thereof. It is.

However, there remains a need for an improved method of planarizing or polishing a memory or fixed disk with a high removal rate while minimizing surface defects. The present invention seeks to provide such a method. These and other advantages of the inventive method will be apparent from the description of the invention provided herein.

<Overview of invention>

The present invention relates to a memory or fixed disk comprising (i) a polishing composition comprising an oxidant, an amino acid, and water selected from the group consisting of persulfates and peroxides, and (ii) polishing at least a portion of the surface with the abrasive. A method of planarizing or polishing a surface is provided.

The present invention provides a method of planarizing or polishing a memory or fixed disk. The method comprises contacting a surface of a memory or fixed disk with (i) an abrasive composition comprising an oxidant, an amino acid, and water selected from the group consisting of persulfates and peroxides, and (ii) an abrasive, and a memory or fixed disk Polishing at least a portion of the memory or fixed disk surface by moving the polishing composition relative to the polishing composition. Such contact and polishing may be performed by any suitable technique. For example, the polishing composition may be applied to the surface of the memory or fixed disk to be used to polish more than a portion of the surface of the memory or fixed disk through the use of a polishing pad.

The term "memory or fixed disk" refers to any magnetic disk, hard disk, fixed disk or memory disk for retaining information in electromagnetic form. The memory or fixed disk typically has a surface comprising nickel-phosphorus, but the surface of the memory or fixed disk may comprise any suitable other material.

The abrasive can be any suitable abrasive. Preferably, the abrasive is a metal oxide abrasive. Metal oxide abrasives include, for example, alumina, silica, titania, ceria, zirconia, germania, magnesia and combinations thereof. Preferably, the abrasive of the method of the invention is a polycondensed metal oxide, for example a polycondensed silica. Typically, the polycondensed silica is prepared by condensation of Si (OH) ₄ to form colloidal particles. Such abrasives are prepared in accordance with US Pat. No. 5,230,833, or various commercially available products (eg, Akzo-Nobel Bindzil 50/80 products, and Nalco 1050, 2327 and 2329), as well as other products sold by DuPont, Bayer, Applied Research, Nissan Chemical, and Clariant.

Preferably, the abrasive is one having at least about 90% (by number) of its abrasive grains having a particle size of 100 nm or less. Preferably, at least about 95%, at least 98%, or even substantially all (or indeed all) abrasive particles (by number) have a particle size of 100 nm or less. In addition, such particle size preferences for abrasive particles (i.e., at least about 90%, at least 95%, at least 98%, almost all, and all abrasive particles (by number) in the abrasive) are below a certain size, may be used in other particle sizes, for example. For example, they may belong to 95 nm, 90 nm, 85 nm, 80 nm, 75 nm, 70 nm and 65 nm.

Similarly, the abrasive may be at least about 90%, at least 95%, at least 98%, or even almost all (or indeed all) abrasive particles (by number) having a particle size of at least 5 nm. In addition, the preference of particle size for these abrasive particles (ie, at least about 90%, at least 95%, at least 98%, almost all, and all abrasive particles (by number) in the abrasive) is at least a certain size, for example. For example, they may belong to 7 nm, 10 nm, 15 nm, 25 nm and 30 nm.

The percentage value used herein to describe the nature of the abrasive in terms of particle size is% by number rather than by weight unless otherwise indicated. The particle size of the abrasive particles in the abrasive refers to the particle size. Particle size can be measured by any suitable technique. The particle size values described herein are based on visual inspection of statistically significant (preferably at least 200 particles) abrasive samples, specifically based on transmission electron microscopy (TEM) of the samples.

The particle size distribution of the abrasive particles in the abrasive can be characterized by the geometric standard deviation of the number basis referred to as sigma- _g (σ _g ). The value of sigma _g can be obtained by dividing the maximum value of the diameter of (a) the abrasive particles of 84% (by number) in the abrasive by the maximum value of the diameter of (b) the abrasive particles of 16% (by number) of the abrasive. (Ie σ _g = d ₈₄ / d ₁₆ ). The sigma _g value of the monodisperse abrasive particles is about one. As the abrasive particles are polydisperse (i.e., including particles of increasingly different sizes), the σ _g value of the abrasive particles increases above one. The sigma _g value of conventional abrasive particles is about 2.5 or less (eg, about 2.3 or less). Preferred abrasive particles have a sigma _g value of at least about 1.1 (eg, about 1.1 to 2.3 (eg, 1.1 to 1.3)), more preferably at least about 1.3 (eg, about 1.5 to 2.3, or even about 1.8 to 2.3).

Any suitable amount of abrasive may be present in the polishing composition. Preferably, the abrasive is present at a concentration of about 0.1 to 30% by weight of the composition, for example at a concentration of about 1 to 28% by weight of the composition. More preferably, the abrasive is present at a concentration of about 3 to 25 weight percent of the composition, for example at a concentration of about 5 to 20 weight percent of the composition, or even at a concentration of about 6 to 15 weight percent of the composition. Alternatively, the abrasive may be secured (eg, buried) in whole or in part on or within the polishing pad.                 

The oxidant can be any suitable oxidant. Suitable oxidizing agents include, for example, persulfates and peroxides. Preferably, the oxidant is selected from the group consisting of ammonium persulfate, potassium persulfate, sodium persulfate and hydrogen peroxide.

Any suitable amount of oxidant may be present in the polishing composition. The oxidant is preferably present in an amount from about 0.01 to 10% by weight of the composition, for example in an amount from about 0.1 to 10% by weight. More preferably, the oxidant is present in an amount of about 0.5 to 8% by weight of the composition, for example about 1 to 6% by weight, or even about 2 to 6% by weight.

The amino acid can be any suitable amino acid. Suitable amino acids include, for example, amino acids containing 1 to 8 carbon atoms, for example amino acids containing 1 to 7 carbon atoms, or even amino acids containing 1 to 6 carbon atoms. Preferably, the amino acids in the composition of the method according to the invention are glycine, iminodiiacetic acid, alanine, valine, leucine, isoleucine, serine and threonine. More preferably, the amino acid is glycine or alanine.

Any suitable amount of amino acids can be present in the polishing composition. The amino acid is preferably present in an amount of about 0.01 to 10% by weight of the composition, for example in an amount of about 0.1 to 10% by weight. More preferably, the amino acids are present in an amount of about 0.5-8% by weight of the composition, for example in an amount of about 0.75-8% by weight. Most preferably, the amino acids are present in an amount of about 1 to 7% by weight of the composition, for example about 2 to 6% by weight, or even 3 to 5% by weight.                 

The pH of the polishing composition can be any suitable pH. Preferably, the pH of the composition is about 1 to 7, for example about 1 to 6. More preferably, the pH of the composition is about 2-5, for example about 2-4, or even about 3-4.

The pH of the polishing composition can be adjusted by any suitable method, such as adding a pH adjuster to the composition if necessary. Suitable pH adjusting agents include, for example, bases such as potassium hydroxide, ammonium hydroxide, sodium carbonate and mixtures thereof, as well as inorganic acids (eg nitric acid and sulfuric acid) and organic acids (eg acetic acid, citric acid, malonic acid, succinic acid). Acids such as tartaric acid and oxalic acid).

The polishing composition may optionally further comprise one or more other additives. Such additives include surfactants (eg cationic surfactants, anionic surfactants, nonionic surfactants, amphoteric surfactants, fluorinated surfactants and mixtures thereof), polymer stabilizers or other surface active dispersants (eg Phosphoric acid, organic acid, tin oxide and phosphonate compounds), and additional polishing promoters such as catalysts, chelating agents or complexing agents [eg, sulfates, carboxylate groups, hydroxides of metals, in particular iron Compounds with siloxane groups, sulfone groups and / or phosphone groups, di-, tri-, multi- and poly-carboxylic acids and salts thereof (e.g. tartaric acid and tartrate, malic acid and malate, malonic acid and Malonate, gluconic acid and gluconate, citric acid and citrate, phthalic acid and phthalate, pyrocatechol, pyrogallol, gallic acid and gallate, tannic acid and tannate), amine containing compounds ( For example primary, secondary, tertiary and quaternary amines and amino acids), and mixtures thereof.

The following examples further illustrate the invention but, of course, should not be construed as limiting its scope in any way.

The memory or fixed disk referred to in all the examples below is a commercially available memory or fixed disk available from Seagate Technology. The memory or fixed disk was coated (plated) with nickel-phosphorus on an aluminum substrate. The memory or fixed disk was subjected to a pre-polishing process before being used in the examples below, and the surface roughness of each memory or fixed disk was 10-50 GPa.

The abrasive pad used in all examples was a Politex Hi pad 25.4 cm in diameter made by Rodel. The memory or fixed disk of Examples 1 to 3 was subjected to a platen speed of 150 rpm, a polishing carrier speed of 150 rpm, and a slurry flow rate of 100 ml / using a tabletop grinder manufactured by Streuers (West Lake, Ohio). Min, and abrasion downforce of 50 N. The memory or fixed disk of Example 4 was polished using a Strausbaugh 6EE grinder (San Luis Obispo, Calif.) At a polishing pad speed of 55-65 rpm and a polishing drop of 10-12.5 N.

Nickel-phosphorus polishing rate was calculated by measuring the weight of the memory or fixed disk which was washed and dried before and after polishing. The weight loss was converted to a thickness loss of the memory or fixed disk using a density of 8.05 g / cm ³ of nickel-phosphorus. In spite of the nominal differences in polishing conditions (particularly with regard to abrasive pad wear during the test period), for a more accurate comparison between the polishing compositions of each of the following examples, 4% by weight of silica (specifically A control composition with a pH of 3.5, containing Akzo-Nobel Bind 50/80) and 0.25 wt.% Hydroxyl nitrate (HAN), was used at regular intervals. Thereafter, the actual polishing rate of each test composition was converted to the relative polishing rate by dividing the polishing rate of the test composition by the polishing rate of the most recently evaluated control composition. Thus, the relative polishing rates of the test compositions can be compared across all examples.

<Example 1>

This example illustrates that the polishing rate of a memory or fixed disk achievable by the method of the present invention is dependent on the amino acid type in the polishing composition.

Nickel-phosphor plated memory or fixed disks were prepared using 4 weight percent silica (specifically, Akzo-Nobel Bind 50/80 product), 2 weight percent H ₂ O ₂ and 1-3 weight percent amino acid (specific As glycine, DL-alanine, iminodiacetic acid or DL-serine), each with six different polishing compositions having a pH of 2.5. For comparison purposes, a nickel-phosphor plated memory or fixed disk was also used as the control polishing composition described above, and three "comparative" polishing compositions [4% by weight of silica (specifically, Azo-Nobel Bindyl 50/80 products). ), And together with any one of 2% by weight of H ₂ O ₂ or 1% by weight of amino acids (specifically, glycine)] (the pH of all the comparative compositions is 2.5) Polished by After using the polishing composition, the relative polishing rate of each composition was measured, and the resulting data is shown in Table 1.

Composition amino acid H ₂ O ₂ Relative removal rate Control none (HAN) 1.0 1 for comparison none none 0.8 2 for comparison none 2 1.4 3 for comparison 1 wt% glycine none 0.9 1A 1 wt% glycine 2 2.5 1B 3 wt% glycine 2 2.0 1C 1 wt% DL-Alanine 2 2.3 1D 3 wt% DL-alanine 2 1.9 1E 2 wt% imino-diacetic acid 2 2.4 1F 2 wt% DL-serine 2 1.6

As is evident from the data in Table 1, the relative polishing rates exhibited by the polishing compositions (compositions 1A-1F) containing both H ₂ O ₂ and amino acids were greater than the polishing rates of the control polishing composition, with H ₂ O ₂ and It was larger than the polishing rate of the comparative composition (comparative compositions 1 to 3) which did not contain both amino acids. Furthermore, relative to the polishing composition (compositions 1A, 1C and 1E) containing, together with H ₂ O ₂ , any one of 1% by weight glycine, 1% by weight DL-alanine or 2% by weight iminodiacetic acid. The polishing rate is determined by the polishing composition (compositions 1B, 1D and 1F) containing any one of 3 wt% glycine, 3 wt% DL-alanine or 2 wt% DL-serine together with H ₂ O _2. It is larger than the relative removal rate. These results not only demonstrate the importance of the combination of oxidant and amino acid in the method of the present invention, but also demonstrate the importance of the effect of a particular amino acid on the removal rate achievable by the method of the present invention.

<Example 2>

This example illustrates that the polishing rate of a memory or fixed disk achievable by the method of the present invention depends not only on the amino acid concentration in the polishing composition and the pH of the polishing composition, but also on the type of oxidant in the polishing composition.

Nickel-phosphor plated memory or fixed disks were fabricated with 4 weight percent silica (specifically, from Akzo-Nobel Bind 50/80), 1-3 weight percent glycine and 2 weight percent oxidant (specifically, Each was ground with 8 different polishing compositions containing H ₂ O ₂ or ammonium persulfate (APS) and having a pH of 2.5 to 3.5. After using the polishing composition, the relative polishing rate of each composition was measured, and the resulting data is shown in Table 2. For comparison purposes, Table 2 also describes the relative polishing rates of the control polishing compositions described above, and the relative polishing rates of the three "comparative" polishing compositions (compositions 1 to 3) described in Example 1.

Composition Weight percent of glycine Oxidant pH Relative removal rate Control none (HAN) 3.5 1.0 1 for comparison none none 2.5 0.8 2 for comparison none 2 wt% H ₂ O ₂ 2.5 1.4 3 for comparison One none 2.5 0.9 2A One 2 wt% APS 2.5 2.3 2B 3 2 wt% APS 2.5 1.7 2C One 2 wt% APS 3.5 2.0 2D 3 2 wt% APS 3.5 1.7 2E One 2 wt% H ₂ O ₂ 2.5 2.5 2F 3 2 wt% H ₂ O ₂ 2.5 2.0 2G One 2 wt% H ₂ O ₂ 3.5 1.7 2H 3 2 wt% H ₂ O ₂ 3.5 1.6

As is apparent from the data in Table 2, when all other conditions are the same, the relative polishing rate exhibited by the polishing composition (compositions 2A, 2C, 2E and 2G) containing 1% by weight of glycine and oxidant is 3% by weight. It was larger than the relative polishing rate exhibited by the polishing composition (compositions 2B, 2D, 2F and 2H) containing glycine and an oxidizing agent. Moreover, when all other conditions are the same, the relative removal rate exhibited by the composition of pH 2.5 containing glycine and oxidant (compositions 2A, 2B, 2E and 2F) is determined by the composition of pH 3.5 containing glycine and oxidant (composition 2C). , 2D, 2G, and 2H) were equal to or greater than the relative removal rates shown. These results demonstrate the importance of certain oxidants, amino acid concentrations and pH in the removal rates achievable by the process of the invention.

<Example 3>

This example illustrates that the polishing rate of the memory or fixed disk achieved by the composition of the present invention depends not only on the amino acid concentration in the polishing composition and the pH of the polishing composition, but also on the type of oxidant in the polishing composition.

Nickel-phosphor plated memory or fixed disks were prepared using 4% by weight of silica (specifically, Akzo-Nobel Bind 50/80), 1 to 3% by weight of DL-alanine and 2% by weight of oxidant (specifically Was polished with eight different polishing compositions, each containing H ₂ O ₂ or potassium persulfate (KPS) and having a pH of 2.5 to 3.5. After using the polishing composition, the relative polishing rate of each composition was measured, and the resulting data is shown in Table 3. For comparison purposes, Table 3 also describes the relative polishing rates of the control polishing compositions described above, and the relative polishing rates of the two “comparative” polishing compositions described in Example 1 (ie, Comparative Compositions 1 and 2).

Composition Weight percent of DL-alanine Oxidant pH Relative removal rate Control none (HAN) 3.5 1.0 1 for comparison none none 2.5 0.8 2 for comparison none 2 wt% H ₂ O ₂ 2.5 1.4 3A One 2 wt% KPS 2.5 2.0 3B 3 2 wt% KPS 2.5 1.5 3C One 2 wt% KPS 3.5 1.7 3D 3 2 wt% KPS 3.5 1.5 3E One 2 wt% H ₂ O ₂ 2.5 2.3 3F 3 2 wt% H ₂ O ₂ 2.5 1.9 3G One 2 wt% H ₂ O ₂ 3.5 1.7 3H 3 2 wt% H ₂ O ₂ 3.5 1.5

As is evident from the data in Table 3, when all other conditions are the same, the relative polishing rate exhibited by the polishing composition (compositions 3A, 3C, 3E and 3G) containing 1% by weight of DL-alanine and an oxidant is 3 It was greater than the relative polishing rate exhibited by the polishing composition (compositions 3B, 3D, 3F and 3H) containing weight percent DL-alanine and an oxidizing agent. Moreover, when all other conditions are the same, the relative removal rates exhibited by the compositions of pH 2.5 containing DL-alanine and oxidant (compositions 3A, 3B, 3E and 3F) were obtained at pH 3.5 containing DL-alanine and oxidant. It was equal to or greater than the relative removal rate exhibited by the composition (compositions 3C, 3D, 3G and 3H). These results demonstrate the importance of certain oxidants, amino acid concentrations and pH in the removal rates achievable by the process of the invention.

<Example 4>

This example illustrates the importance of the amino acid concentration in the polishing composition in the polishing rate of a memory or fixed disk achievable by the method of the present invention.

The nickel-phosphor plated memory or fixed disk contains 4 weight percent silica (specifically, Akzo-Nobel Bind 50/80 product), 1.5 weight percent H ₂ O ₂ and 0.1 to 1.3 weight percent glycine. And each with six different polishing compositions having a pH of 2.5. After using the polishing composition, the relative polishing rate of each composition was measured, and the resulting data is shown in Table 4. For comparison purposes, Table 4 also describes the relative polishing rates of the control polishing compositions described above.

Composition Weight percent of glycine Weight% of H ₂ O ₂ Relative removal rate Control none (HAN) 1.0 4A 0.1 1.5 1.1 4B 0.35 1.5 1.3 4C 0.5 1.5 1.5 4D 0.7 1.5 1.8 4E One 1.5 2.3 4F 1.3 1.5 1.7

As is evident from the data in Table 4, the relative polishing rates exhibited by the polishing compositions (compositions 4D to F) containing H ₂ O ₂ and 0.7 to 1.3 weight percent glycine were 0.1 to 0.5 weight percent H ₂ O _2. It was larger than the relative removal rate represented by the polishing composition (compositions 4A to C) containing glycine of. Further, the polishing composition (Composition 4E) relative removal rate The polishing composition (compositions 4A-D) containing glycine is less than H ₂ O ₂ and 1% by weight, represented by containing glycine of H ₂ O ₂ and 1% by weight It was larger than the relative polishing rate of and was larger than the relative polishing rate of the polishing composition (composition 4F) containing glycine in excess of H ₂ O ₂ and 1% by weight. These results demonstrate that the concentration of amino acids is important in the removal rate achievable by the method of the present invention.

All references cited herein, including patents, patent applications, and publications, are considered to be incorporated by reference in their entirety.

While the invention has been described with an emphasis on preferred embodiments, it will be apparent to those of ordinary skill in the art that modifications to the preferred embodiments may be employed and that the invention may be practiced otherwise than as specifically described herein. Do. Accordingly, the present invention is intended to embrace all variations contained within the scope of the following claims to the extent acceptable by applicable law or regulation.

Claims (19)

planarizing the surface of the memory or fixed disk, comprising (i) polishing composition comprising an oxidant, an amino acid, and water selected from the group consisting of persulfate and peroxide, and (ii) polishing at least a portion of the surface with the abrasive How to make or polish. The method of claim 1, wherein the surface of the memory or fixed disk comprises nickel-phosphorus. The method of claim 1 wherein the abrasive is selected from the group consisting of alumina, silica, titania, ceria, zirconia, germania, magnesia and combinations thereof. The method of claim 3 wherein the abrasive is silica. The method of claim 4 wherein the abrasive is a polycondensed silica. The method of claim 1, wherein at least about 90% abrasive particles (by number) have a particle size of 100 nm or less. 7. The method of claim 6, wherein substantially all abrasive particles (by number) have a particle size of 100 nm or less. The method of claim 1, wherein the particle size distribution of the abrasive particles is about 1.3 or greater geometric standard deviation (σ _g ). The method of claim 1, wherein the abrasive is present at a concentration of about 0.1 to 30 weight percent of the composition. The method of claim 1, wherein the abrasive is fixed on or in the polishing pad. The method of claim 1 wherein the oxidant is ammonium persulfate, potassium persulfate or sodium persulfate. The method of claim 1 wherein the oxidant is hydrogen peroxide. The method of claim 1, wherein the oxidant is present in an amount from about 0.01 to 10 weight percent of the composition. The method of claim 1, wherein the amino acid is selected from the group consisting of glycine, iminodiacetic acid, alanine, valine, leucine, isoleucine, serine and threonine. The method of claim 14, wherein the amino acid is glycine. The method of claim 14, wherein the amino acid is alanine. The method of claim 1, wherein the amino acid is present in an amount from about 0.01 to 10 weight percent of the composition. The method of claim 1 wherein the pH of the polishing composition is about 1-6. 19. The method of claim 18, wherein the polishing composition has a pH of about 2-4.