KR100720432B1 - Film for intercepting light in Liquid Crystal Display - Google Patents

Film for intercepting light in Liquid Crystal Display Download PDF

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KR100720432B1
KR100720432B1 KR1020000041652A KR20000041652A KR100720432B1 KR 100720432 B1 KR100720432 B1 KR 100720432B1 KR 1020000041652 A KR1020000041652 A KR 1020000041652A KR 20000041652 A KR20000041652 A KR 20000041652A KR 100720432 B1 KR100720432 B1 KR 100720432B1
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liquid crystal
layer
light blocking
crystal display
blocking film
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KR20020008247A (en
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김점재
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엘지.필립스 엘시디 주식회사
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133512Light shielding layers, e.g. black matrix
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00Control of display operating conditions
    • G09G2320/02Improving the quality of display appearance
    • G09G2320/0247Flicker reduction other than flicker reduction circuits used for single beam cathode-ray tubes

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Liquid Crystal (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
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Abstract

본 발명은 광 차단막으로부터의 광 반사를 방지하여 화질 및 소자의 특성을 개선시킬 수 있는 액정 디스플레이 장치의 광 차단막을 제공하기 위한 것으로, 본 발명의 액정 디스플레이 장치의 광 차단막은 제 1 질화크롬층, 금속층, 제 2 질화크롬층이 차례로 적층된 구조를 갖는 것을 특징으로 한다.The present invention provides a light blocking film of a liquid crystal display device which can prevent light reflection from the light blocking film to improve image quality and device characteristics. The light blocking film of the liquid crystal display device of the present invention includes a first chromium nitride layer, A metal layer and a second chromium nitride layer are laminated in order.

광 차단막Light shield

Description

액정 디스플레이 장치의 광 차단막{Film for intercepting light in Liquid Crystal Display}Film for intercepting light in liquid crystal display

도 1은 종래 기술에 따른 액정 디스플레이 장치의 단면구조도1 is a cross-sectional structure diagram of a liquid crystal display device according to the prior art

도 2a 내지 2b는 종래 액정 디스플레이 장치에 따른 광 차단막의 구조도2a to 2b is a structural diagram of a light blocking film according to a conventional liquid crystal display device

도 3a 내지 3b는 본 발명 액정 디스플레이 장치에 따른 광 차단막의 구조도3a to 3b is a structural diagram of a light blocking film according to the liquid crystal display device of the present invention

도면의 주요부분에 대한 부호의 설명Explanation of symbols for main parts of the drawings

31 : 절연기판 32,34 : 제 1, 제 2 질화크롬층31 Insulation substrate 32, 34 First and second chromium nitride layer

32a : 제 3 질화크롬층 33 : 금속층 32a: third chromium nitride layer 33: metal layer

본 발명은 디스플레이 장치에 관한 것으로, 특히 액정 디스플레이 장치의 광 차단막에 관한 것이다.The present invention relates to a display device, and more particularly, to a light blocking film of a liquid crystal display device.

일반적으로, TFT-LCD는 액정 TV, 노트 북 PC, 액정 게임기, 투사형 TV, HD-TV 등에 이용될 뿐만 아니라, 평판형 표시장치로서의 역할을 충분히 수행할 수 있을 정도로 개발되어 그 수요가 점차 증가하고 있는 추세에 있다.In general, TFT-LCD is not only used for liquid crystal TVs, notebook PCs, liquid crystal game consoles, projection TVs, HD-TVs, etc., but also developed enough to perform a role as a flat panel display device, and the demand is gradually increased. There is a trend.

TFT-LCD 산업의 발전과 그 응용은 크기의 증가, 해상도의 증가에 의해 가속 화되었으며, 생산성 증가와 낮은 가격을 위해서 제조공정의 단순화 및 수율향상의 관점에서 많은 노력이 계속되고 있다.The development of the TFT-LCD industry and its applications have been accelerated by the increase in size and the increase in resolution, and much effort is being made in terms of simplification of manufacturing process and improvement of yield for the purpose of increasing productivity and low price.

이와 같은 LCD는 패널 내부에 주입된 액정의 전기 광학적 성질을 이용하는 것으로, PDP(Plasma Display Panel), FED(Field Emission Display) 등과는 달리 자체 발광을 하지 못하는 비발광성이기 때문에 LCD 패널에 표시된 화상을 보기 위해서는 화상 표시면을 균일하게 조사하는 별도의 광원인 백라이트(Back Light)가 필요하다.This LCD uses the electro-optic properties of the liquid crystal injected into the panel, and unlike LCD display panels (PDPs) and field emission displays (FEDs), the LCD does not emit light, and thus displays images displayed on the LCD panel. For this purpose, a backlight (Back Light), which is a separate light source for uniformly irradiating the image display surface, is required.

이하, 첨부된 도면을 참조하여 종래 기술에 따른 액정 디스플레이 장치를 설명하기로 한다.Hereinafter, a liquid crystal display device according to the related art will be described with reference to the accompanying drawings.

도 1은 종래 기술에 따른 액정 디스플레이 소자의 구조단면도이다.1 is a structural cross-sectional view of a liquid crystal display device according to the prior art.

도 1에 도시된 바와 같이, 두 장의 유리기판을 대향시켜 그 사이에 액정을 봉입한 것으로, 상판(11)에는 색상을 표현하기 위한 R,G,B 칼라필터층(12)이 형성되고, 하판(11a)에 형성된 화소전극을 제외한 부분으로 빛의 투과를 차단하기 위한 광 차단막(통상, 블랙매트릭스층이라 칭함)(13)이 매트릭스 형태로 형성된다.As shown in FIG. 1, two glass substrates are opposed to each other, and liquid crystal is enclosed therebetween. In the upper plate 11, R, G, and B color filter layers 12 for expressing color are formed, and the lower plate ( A light blocking film (commonly referred to as a black matrix layer) 13 for blocking light transmission to portions other than the pixel electrode formed in 11a) is formed in a matrix form.

그리고 칼라필터층(12)과 블랙매트릭스(13)에 걸쳐 공통전극(15)이 형성되며, 상기 공통전극(15) 형성 전에 오버코트층(14)을 형성하는 것도 가능하다.The common electrode 15 is formed over the color filter layer 12 and the black matrix 13, and the overcoat layer 14 may be formed before the common electrode 15 is formed.

하판(11a)에는 게이트 라인으로부터 연장되는 게이트 전극(16)과, 상기 게이트 라인과 교차 배치되는 데이터 라인으로부터 연장되는 소오스 전극(17)과 드레인 전극(18)으로 구성되는 박막 트랜지스터(TFT)가 일정한 간격을 갖고 형성된다. 그 리고 드레인 전극(18)과 비아홀을 통해 연결되는 화소전극(19)이 형성되며 하판(11a)의 배면에는 백 라이트(Back Light)(20)가 더 구비된다.In the lower plate 11a, a thin film transistor TFT composed of a gate electrode 16 extending from the gate line, a source electrode 17 extending from the data line intersecting the gate line, and a drain electrode 18 is constant. It is formed at intervals. In addition, the pixel electrode 19 connected to the drain electrode 18 and the via hole is formed, and a back light 20 is further provided on the bottom of the lower plate 11a.

여기서, 상기 광 차단막에 대해 보다 상세하게 설명하면 다음과 같다.Here, the light blocking film will be described in more detail as follows.

도 2a 내지 2b는 도 1의 광 차단막만을 확대도시한 것으로, 종래 액정 디스플레이 장치에 따른 광 차단막은 통상은 크롬 또는 크롬화합물로 형성된다.2A to 2B are enlarged views of the light blocking film of FIG. 1, and the light blocking film according to the conventional liquid crystal display device is usually formed of chromium or a chromium compound.

즉, 도 2a에서와 같이, 크롬화합물층(CrOX)(22)과 크롬층(23)이 적층된 2중막 구조를 갖거나, 도 2b에 도시된 바와 같이, 상기 크롬화합물층(22)과 크롬층(23)의 사이에 크롬나이트라이드층(22a)과 같은 또하나의 크롬화합물층을 갖는 3중막 구조를 갖는다.That is, as shown in FIG. 2A, the chromium compound layer (CrO X ) 22 and the chromium layer 23 have a double layer structure in which they are laminated, or as shown in FIG. 2B, the chromium compound layer 22 and the chromium layer. Between (23), it has a triple film structure which has another chromium compound layer like chromium nitride layer 22a.

이와 같이, 종래 기술에 따른 액정 디스플레이 장치는 상부면이 크롬층(23)을 갖는 2중막 혹은 3중막 구조의 광 차단막(24)이 형성되고, 이웃하는 광 차단막(24) 사이에는 색 구현을 위한 적(R), 녹(G), 청(B)의 칼라필터층(도시하지 않음)이 형성되는 구조를 갖는다.As described above, in the liquid crystal display device according to the related art, a light blocking layer 24 having a double layer or a triple layer structure having a chromium layer 23 on the top surface thereof is formed, and a color blocking layer 24 is formed between adjacent light blocking layers 24. It has a structure in which a color filter layer (not shown) of red (R), green (G), and blue (B) is formed.

이에, 백라이트에서 입사된 백색 편면광을 구동부로부터 입력되는 각각의 화소전압에 따라 화소에 투과되는 빛의 양을 조절하여 칼라 이미지를 디스플레이 한다. Accordingly, the white single-sided light incident from the backlight is controlled to display a color image by adjusting the amount of light transmitted through the pixel according to each pixel voltage input from the driver.

그러나 상기와 같은 종래 액정 디스플레이 장치의 광 차단막은 다음과 같은 문제점이 있었다.However, the light blocking film of the conventional liquid crystal display device as described above has the following problems.

광 차단막의 상부가 크롬층으로 형성되기 때문에 백라이트에서 투사된 빛이 하판을 통과하여 광 차단막 상부면의 크롬층에 의해 반사되어 하판에 형성된 박막 트랜지스터의 채널영역으로 입사될 경우 박막 트랜지스터의 오프-커런트(Off-Current)가 증가하게 된다.Since the upper portion of the light blocking layer is formed of the chromium layer, the light projected from the backlight passes through the lower plate and is reflected by the chromium layer on the upper surface of the light blocking layer to be incident on the channel region of the thin film transistor formed on the lower plate. (Off-Current) is increased.

이는 박막 트랜지스터의 특성을 변화시키게 되고, 그로 인해 플리커(flicker) 등이 발생하여 화질을 저하시키는 요인으로 작용한다.This changes the characteristics of the thin film transistor, thereby causing flicker and the like, which acts as a factor of degrading image quality.

특히, 액정 디스플레이 소자는 칼라필터의 분광특성, 내열성, 내광성 및 광 차단막의 반사율 등 요구특성이 매우 까다로우며 백라이트에 의한 열적안정성뿐만 아니라, 백라이트에 의한 광원이 광 차단막에 의해 반사되지 않도록 하는 것이 매우 중요함에도 불구하고, 종래 기술에 따른 액정 디스플레이 장치는 광 차단막에 의한 광의 반사로 인해 소자의 특성을 저하시키게 된다.In particular, the liquid crystal display device has very demanding characteristics such as spectral characteristics, heat resistance, light resistance, and reflectance of the light blocking film of the color filter, and not only the thermal stability of the backlight but also the light source of the backlight is not reflected by the light blocking film. Although very important, the liquid crystal display device according to the prior art degrades the characteristics of the device due to the reflection of light by the light blocking film.

본 발명은 상기한 종래 기술의 문제점을 해결하기 위해 안출한 것으로, 광 차단막으로부터의 광의 반사를 방지하여 화질 및 소자의 특성을 개선시킬 수 있는 액정 디스플레이 장치의 광 차단막을 제공하는데 그 목적이 있다.The present invention has been made to solve the above problems of the prior art, and an object of the present invention is to provide a light blocking film of a liquid crystal display device that can improve the image quality and device characteristics by preventing reflection of light from the light blocking film.

상기의 목적을 달성하기 위한 본 발명의 액정 디스플레이 장치의 광 차단막은 박막 트랜지스터 및 화소영역을 구비하고 상기 화소영역 이외의 부분으로 빛의 투과를 방지하기 위해 광 차단막을 구비한 액정 디스플레이 장치에 있어서, 상기 광 차단막은 제 1 질화크롬층, 금속층, 제 2 질화크롬층이 순차적으로 적층된 구조를 갖는 것을 특징으로 한다. In the liquid crystal display device of the liquid crystal display device of the present invention for achieving the above object is provided with a thin film transistor and a pixel region, and provided with a light blocking film to prevent the transmission of light to other parts than the pixel region, The light blocking film has a structure in which a first chromium nitride layer, a metal layer, and a second chromium nitride layer are sequentially stacked.                     

먼저, 본 발명의 액정 디스플레이 장치는 광 차단막을 제외한 모든 구조가 종래와 동일하므로 이하에서는 광 차단막에 대해서만 설명하기로 한다.First, since the structure of the liquid crystal display device of the present invention except for the light blocking film is the same as the conventional structure, only the light blocking film will be described below.

본 발명에 따른 광 차단막은 절연기판상에 금속화합물층과 금속층 그리고 반사방지층이 차례로 적층된 구조를 갖거나 절연기판상에 금속화합물층과 금속층, 반사방지층이 적층된 구조에서 상기 금속화합물층과 금속층과의 사이에 또다른 금속화합물층이 개재된 구조를 갖는다.The light blocking film according to the present invention has a structure in which a metal compound layer, a metal layer, and an antireflection layer are sequentially stacked on an insulating substrate, or between the metal compound layer and the metal layer in a structure where the metal compound layer, a metal layer, and an antireflection layer are laminated on an insulating substrate. It has a structure in which another metal compound layer is interposed.

여기서, 상기 금속층은 크롬(Cr)이나, 니켈(Ni)이며, 상기 금속화합물층 및 반사방지층은 질화크롬이나 질화니켈이다.Here, the metal layer is chromium (Cr) or nickel (Ni), and the metal compound layer and the antireflection layer are chromium nitride or nickel nitride.

이하, 첨부된 도면을 참조하여 본 발명의 실시예에 따른 액정 디스플레이 장치의 광 차단막을 설명하기로 한다. Hereinafter, a light blocking film of a liquid crystal display device according to an exemplary embodiment of the present invention will be described with reference to the accompanying drawings.

도 3a는 본 발명 제 1 실시예에 따른 광 차단막의 구조를 도시하였다.3A shows the structure of a light blocking film according to the first embodiment of the present invention.

도 3a에 도시한 바와 같이, 본 발명 제 1 실시예에 따른 광 차단막은 제 1 질화크롬층(32)과 금속층(33) 그리고 제 2 질화크롬층(34)이 적층된 구조를 갖는다.As shown in FIG. 3A, the light blocking film according to the first embodiment of the present invention has a structure in which a first chromium nitride layer 32, a metal layer 33, and a second chromium nitride layer 34 are stacked.

여기서, 상기 제 1 질화크롬층(32) 및 제 2 질화크롬층(34) 대신에 산화크롬(CrOX)을 사용할 수도 있으나, 본 발명의 실시예에서는 산화크롬(CrOX)에 비해 식각 속도가 빨라 공정 시간을 감소시켜 전체적인 TAT(Turn Around Time)를 단축시키는 효과가 있으며, 낮은 파워(Power)에도 증착이 가능한 질화크롬(CrNX)을 사용하였다. 그리고 질화크롬 이외에 질화니켈(NiNX) 또는 수지성분이나 블랙레진(Black Resin) 등을 사용할 수도 있다.Here, chromium oxide (CrO X ) may be used instead of the first chromium nitride layer 32 and the second chromium nitride layer 34, but in an embodiment of the present invention, the etching rate is higher than that of chromium oxide (CrO X ). It has the effect of shortening the process time and reducing the overall TAT (Turn Around Time). Chromium nitride (CrN X ), which can be deposited even at low power, is used. In addition to chromium nitride, nickel nitride (NiN X ), a resin component, or black resin may be used.

상기 금속층(33)으로서는 크롬(Cr) 또는 니켈(Ni)을 포함한다.The metal layer 33 contains chromium (Cr) or nickel (Ni).

한편, 도 3b는 본 발명 제 2 실시예에 따른 광 차단막의 구조를 도시한 것으로, 제 1 질화크롬층(32), 금속층(33), 제 2 질화크롬층(34)이 적층된 구조에서 상기 제 1 질화크롬층(32)과 금속층(33)과의 사이에 제 3 질화크롬층(32a)을 개재한 구조를 보여준다.3B illustrates a structure of a light blocking film according to a second embodiment of the present invention, in which the first chromium nitride layer 32, the metal layer 33, and the second chromium nitride layer 34 are stacked. The structure through which the 3rd chromium nitride layer 32a is interposed between the 1st chromium nitride layer 32 and the metal layer 33 is shown.

여기서, 상기 제 1, 제 2 질화크롬층(32,34) 및 제 3 질화크롬층(32a) 대신에 산화크롬(CrOX)을 사용할 수도 있으나, 본 발명의 실시예에서는 산화크롬(CrOX)에 비해 식각 속도가 빨라 공정 시간을 감소시켜 전체적인 TAT(Turn Around Time)를 단축시키는 효과가 있으며, 낮은 파워(Power)에도 증착이 가능한 질화크롬(CrNX)을 사용하였다. 그리고 상기 질화크롬 이외에 질화니켈(NiNX) 또는 수지성분이나 블랙레진(Black Resin) 등을 사용할 수도 있다.The first and second chromium nitride layer (32, 34) and a third chromium nitride layer (32a) may be used instead of the chromium oxide (CrO X) but in, in the embodiment of the present invention chromium (CrO X) oxide Compared to the etching speed, the process time is reduced, thereby reducing the overall TAT (Turn Around Time). Chromium nitride (CrN X ), which can be deposited even at low power, is used. In addition to the chromium nitride, nickel nitride (NiN X ), a resin component, black resin, or the like may be used.

또한, 제 1, 제 2 질화크롬층(32,34)은 그대로 두고, 제 3 질화크롬층(32a)만을 산화크롬층(CrOX)이나, 질화니켈, 수지성분이나, 블랙레진 등으로 대체하는 것이 가능하다.In addition, the first and second chromium nitride layers 32 and 34 are left as they are, and only the third chromium nitride layer 32a is replaced with a chromium oxide layer (CrO X ), a nickel nitride, a resin component, a black resin, or the like. It is possible.

이상 상술한 바와 같이, 본 발명 액정 디스플레이 장치의 광 차단막은 다음과 같은 효과가 있다.As described above, the light blocking film of the liquid crystal display device of the present invention has the following effects.

광 차단막의 상부면에 반사율이 낮은 물질을 형성하여 백 라이트로부터 투사 된 빛이 광 차단막의 반사에 의해 박막 트랜지스터의 채널로 입사되는 것을 방지할 수 있다.By forming a material having a low reflectance on the upper surface of the light blocking film, it is possible to prevent the light projected from the backlight from entering the channel of the thin film transistor by the reflection of the light blocking film.

따라서, 박막 트랜지스터의 오프 커런트(Off-current)가 증가하는 것을 방지하여 플리커(Flicker)를 제거하고 그로 인한 화질의 개선을 도모할 수 있다. Therefore, it is possible to prevent the off-current of the thin film transistor from increasing, thereby eliminating flicker and thereby improving image quality.

Claims (5)

삭제delete 삭제delete 박막 트랜지스터 및 화소영역을 구비하고 상기 화소영역 이외의 부분으로 빛의 투과를 방지하기 위해 광 차단막을 구비한 액정 디스플레이 장치에 있어서,A liquid crystal display device comprising a thin film transistor and a pixel region and a light blocking film for preventing light from being transmitted to portions other than the pixel region. 상기 광 차단막은 제 1 질화크롬층, 크롬층 및 제 2 질화크롬층이 적층된 것을 특징으로 하는 액정 디스플레이 장치의 광 차단막.The light blocking film is a light blocking film of the liquid crystal display device, characterized in that the first chromium nitride layer, the chromium layer and the second chromium nitride layer are laminated. 삭제delete 삭제delete
KR1020000041652A 2000-07-20 2000-07-20 Film for intercepting light in Liquid Crystal Display KR100720432B1 (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63298224A (en) * 1987-05-28 1988-12-06 Toyobo Co Ltd Sandwich glass having electrochromic function
JPH09174729A (en) * 1995-12-27 1997-07-08 Kanegafuchi Chem Ind Co Ltd Interior facing material for automotive ceiling
JP2714069B2 (en) * 1988-11-28 1998-02-16 株式会社東芝 Liquid crystal display
JPH1124058A (en) * 1997-06-30 1999-01-29 Asahi Glass Co Ltd Substrate with light shielding layer and its production as well as color filter substrate and liquid crystal display element
KR100200356B1 (en) * 1996-06-26 1999-06-15 윤종용 Lcd and its fabrication method for reducing leakage current
KR20010054927A (en) * 1999-12-08 2001-07-02 박종섭 Liquid crystal display with black matrix of low reflectivity

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63298224A (en) * 1987-05-28 1988-12-06 Toyobo Co Ltd Sandwich glass having electrochromic function
JP2714069B2 (en) * 1988-11-28 1998-02-16 株式会社東芝 Liquid crystal display
JPH09174729A (en) * 1995-12-27 1997-07-08 Kanegafuchi Chem Ind Co Ltd Interior facing material for automotive ceiling
KR100200356B1 (en) * 1996-06-26 1999-06-15 윤종용 Lcd and its fabrication method for reducing leakage current
JPH1124058A (en) * 1997-06-30 1999-01-29 Asahi Glass Co Ltd Substrate with light shielding layer and its production as well as color filter substrate and liquid crystal display element
KR20010054927A (en) * 1999-12-08 2001-07-02 박종섭 Liquid crystal display with black matrix of low reflectivity

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