JPH1124058A - Substrate with light shielding layer and its production as well as color filter substrate and liquid crystal display element - Google Patents

Substrate with light shielding layer and its production as well as color filter substrate and liquid crystal display element

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Publication number
JPH1124058A
JPH1124058A JP17472997A JP17472997A JPH1124058A JP H1124058 A JPH1124058 A JP H1124058A JP 17472997 A JP17472997 A JP 17472997A JP 17472997 A JP17472997 A JP 17472997A JP H1124058 A JPH1124058 A JP H1124058A
Authority
JP
Japan
Prior art keywords
layer
alloy
light
substrate
shielding layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17472997A
Other languages
Japanese (ja)
Inventor
Satoru Takagi
悟 高木
Akira Mitsui
彰 光井
Yasuhiko Akao
安彦 赤尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP17472997A priority Critical patent/JPH1124058A/en
Publication of JPH1124058A publication Critical patent/JPH1124058A/en
Pending legal-status Critical Current

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  • Optical Filters (AREA)
  • Liquid Crystal (AREA)

Abstract

PROBLEM TO BE SOLVED: To make it possible to maintain high light shielding performance by using a non-chromium metallic film even if the thickness thereof is thin by using a material essentially consisting of Ni and additives effective for lowering the Curie temp. of Ni for a light shielding layer. SOLUTION: This process for producing the substate with the light shielding layer formed by a magnetron sputtering method consists in using the material essentially consisting of the Ni and the additives effective for lowering the Curie temp. the Ni for the light shielding layer. The light shielding layer consists essentially of the Ni and the additives, such as V, Sb, Si, Ge, Mo, W, Os, Ir and Ru, effective for lowering the Curie temp. of the Ni. For example, a first layer 3 for suppressing reflection is formed on the substate 1 side and a second layer 4 having a high light shielding degree is formed thereon. An oxide film of the Ni, an oxide film of an alloy essentially consisting of the Ni and the effective additives, a nitride film of the Ni, a nitride film of an alloy essentially consisting of the Ni and the effective additives, etc., are adequately usable for the first layer 3.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、遮光層付き基板及
びその製造方法及びカラーフィルタ基板及び液晶表示素
子に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate with a light-shielding layer, a method of manufacturing the same, a color filter substrate, and a liquid crystal display device.

【0002】[0002]

【従来の技術】近年、液晶表示素子(LCD)、プラズ
マディスプレイ(PDP)、エレクトロルミネッセンス
ディスプレイ(ELD)等のフラットパネルディスプレ
イのカラー化が進んでいる。
2. Description of the Related Art In recent years, colorization of flat panel displays such as a liquid crystal display (LCD), a plasma display (PDP), and an electroluminescence display (ELD) has been advanced.

【0003】これらのカラーパネルにおいては、いずれ
も画面のコントラストを向上し、視認性を向上させるた
めにRGBのカラーフィルタ間に遮光機能を持った遮光
層が設けられる。この遮光層の材料としては、クロム、
ニクロム、タンタル等の金属膜や、カーボン等の黒色顔
料を含有した樹脂等が挙げられる。
In each of these color panels, a light-shielding layer having a light-shielding function is provided between the RGB color filters in order to improve the contrast of the screen and improve the visibility. Chromium,
Examples include a metal film such as nichrome and tantalum, and a resin containing a black pigment such as carbon.

【0004】基板上への遮光層の作製方法としては、ク
ロム等の金属膜の場合には、基板上に、スパッタ法等で
100nm厚程度の薄膜を形成した後、フォトリソグラ
フィによりレジストパターンを形成し、これをマスクと
してエッチングし、所望の金属パターンを形成する。
As a method of forming a light-shielding layer on a substrate, in the case of a metal film such as chromium, a thin film having a thickness of about 100 nm is formed on the substrate by sputtering or the like, and then a resist pattern is formed by photolithography. Then, using this as a mask, etching is performed to form a desired metal pattern.

【0005】特に表面反射率の低い遮光層を得たい場合
には、基板上に、金属の酸化物又は酸窒化物を50nm
厚程度形成した後、100nm厚程度の金属膜を積層し
た構成も用いられる。
[0005] In particular, when it is desired to obtain a light-shielding layer having a low surface reflectance, a metal oxide or oxynitride is deposited on a substrate in a thickness of 50 nm.
A structure in which a metal film having a thickness of about 100 nm is stacked after being formed to a thickness of about 100 nm is also used.

【0006】他方、黒色顔料を含有した樹脂の場合に
は、黒色顔料粉末を樹脂に分散させたインクを印刷法で
印刷パターン化した後、加熱硬化させ遮光層を形成する
方法等が用いられる。黒色顔料粉末を感光性樹脂に分散
させたインクを塗布して、フォトリソグラフィで所望の
パターンの遮光層を形成することも行われている。
On the other hand, in the case of a resin containing a black pigment, a method in which an ink in which a black pigment powder is dispersed in a resin is printed into a print pattern by a printing method, and then cured by heating to form a light-shielding layer is used. In some cases, an ink in which a black pigment powder is dispersed in a photosensitive resin is applied, and a light-shielding layer having a desired pattern is formed by photolithography.

【0007】[0007]

【発明が解決しようとする課題】従来のクロムやニクロ
ム等の金属、その酸化物、又はその酸窒化物を用いた遮
光層は、主にスパッタ法等の真空成膜法により成膜した
後、レジストのフォトリソグラフィとエッチングによる
パターン形成を行う。このため、生産性が低く、製造コ
ストが高い欠点があるが、ピンホール等の発生が非常に
少なく、100nm程度の膜厚でも充分な遮光性能が得
られる利点がある。しかし、環境への配慮が強く叫ばれ
る近年、クロムを使わない遮光層用金属材料が求められ
ている。
The light-shielding layer using a conventional metal such as chromium or nichrome, its oxide, or its oxynitride is mainly formed by a vacuum film forming method such as a sputtering method. A pattern is formed by photolithography and etching of the resist. Therefore, there are disadvantages that the productivity is low and the production cost is high, but there is an advantage that occurrence of pinholes and the like is extremely small, and sufficient light shielding performance can be obtained even with a film thickness of about 100 nm. However, in recent years, there has been a demand for a light shielding layer metal material that does not use chromium, in which environmental considerations have been strongly called for.

【0008】他方、黒色顔料を含有した樹脂の場合に
は、真空成膜法を用いないですむため生産性が高く、製
造コストが安いが、充分な遮光性能を得るためにパター
ン厚みを2μm程度ときわめて厚くしなければならず、
基板上に遮光層のある部分とない部分とで大きな段差が
生じる。この段差が液晶の配向制御に悪影響を与えるこ
とがある。
On the other hand, in the case of a resin containing a black pigment, the productivity is high and the manufacturing cost is low because the vacuum film forming method is not required, but the pattern thickness is about 2 μm in order to obtain a sufficient light shielding performance. Must be very thick,
A large step occurs between a portion where the light-shielding layer is provided and a portion where the light-blocking layer is not provided on the substrate. This step may adversely affect the alignment control of the liquid crystal.

【0009】本発明は、前記課題を鑑み、クロム膜と同
等以上の性能を有する非クロム金属膜を用いた厚みが薄
くても高い遮光性能を有し、環境への悪影響の少ない遮
光層付き基板を提供することを目的とする。
SUMMARY OF THE INVENTION In view of the above problems, the present invention provides a substrate with a light-shielding layer that uses a non-chromium metal film having a performance equal to or higher than that of a chromium film, has high light-shielding performance even if the thickness is small, and has little adverse effect on the environment The purpose is to provide.

【0010】[0010]

【課題を解決するための手段】本発明は、基板表面にN
i系の遮光層を形成する遮光層付き基板の製造方法にお
いて、遮光層がNiとNiのキュリー温度を低下させる
のに有効な添加物とを主成分とする材料を用いてマグネ
トロンスパッタ法により形成されることを特徴とする遮
光層付き基板の製造方法を提供する。
SUMMARY OF THE INVENTION The present invention provides a method for forming an N
In a method of manufacturing a substrate with a light-shielding layer for forming an i-type light-shielding layer, the light-shielding layer is formed by a magnetron sputtering method using a material mainly containing Ni and an additive effective for lowering the Curie temperature of Ni. The present invention provides a method for manufacturing a substrate with a light-shielding layer, characterized by being performed.

【0011】また、そのNiのキュリー温度を低下させ
るのに有効な添加物として、V、Sb、Si、Ge、M
o、W、Os、Ir、Ruのうちのいずれか1つ以上の
元素を用いることを特徴とする遮光層付き基板の製造方
法を提供する。
V, Sb, Si, Ge and M are effective additives for lowering the Curie temperature of Ni.
Provided is a method for manufacturing a substrate with a light-shielding layer, wherein at least one element selected from the group consisting of o, W, Os, Ir, and Ru is used.

【0012】また、それらの形成される遮光層のうち1
層以上が、NiとNiのキュリー温度を低下させるのに
有効な添加物とを主成分とする合金、該合金の窒化物、
該合金の酸化物、該合金の炭化物又はそれらの複合物の
層である遮光層付き基板の製造方法を提供する。
In addition, one of the light-shielding layers formed is
An alloy mainly composed of Ni and an additive effective for lowering the Curie temperature of Ni, a nitride of the alloy,
Provided is a method for manufacturing a substrate with a light-shielding layer, which is a layer of an oxide of the alloy, a carbide of the alloy, or a composite thereof.

【0013】また、それらの遮光層が2層以上の構造を
有し、基体側より第1層がNiの酸化物、Niの窒化
物、Niの酸窒化物、NiとNiのキュリー温度を低下
させるのに有効な添加物とを主成分とする合金の酸化
物、該合金の窒化物、又は該合金の酸窒化物からなり、
かつその上に積層された第2層がNiとNiのキュリー
温度を低下させるのに有効な添加物とを主成分とする合
金、第1層より窒化度の低い該合金の窒化物、又は該合
金の炭化物からなる遮光層付き基板の製造方法を提供す
る。
Further, the light-shielding layer has a structure of two or more layers, and the first layer reduces Ni oxide, Ni nitride, Ni oxynitride, and the Curie temperature of Ni and Ni from the base side. Consisting of an oxide of an alloy mainly containing an additive effective to cause a nitride of the alloy, or an oxynitride of the alloy,
And an alloy containing Ni and an additive effective for lowering the Curie temperature of Ni as a main component, a nitride of the alloy having a lower degree of nitridation than the first layer, or a second layer stacked thereon. Provided is a method for manufacturing a substrate having a light-shielding layer made of a carbide of an alloy.

【0014】また、それらの遮光層が2層又は3層構造
を有し、NiとNiのキュリー温度を低下させるのに有
効な添加物とを主成分とする合金、該合金の窒化物、又
は該合金の炭化物からなる第2層と、その第2層の基板
とは反対側の面上に形成されたNiの酸化物又はNiと
Niのキュリー温度を低下させるのに有効な添加物とを
主成分とする合金の酸化物を主成分とする第3層とを少
なくとも有する遮光層付き基板の製造方法を提供する。
Further, the light-shielding layer has a two-layer or three-layer structure, and is mainly composed of an alloy containing Ni and an additive effective for lowering the Curie temperature of Ni, a nitride of the alloy, or A second layer made of carbide of the alloy and an oxide of Ni or an additive effective to lower the Curie temperature of Ni and Ni formed on the surface of the second layer opposite to the substrate. Provided is a method for manufacturing a substrate with a light-shielding layer, which has at least a third layer mainly containing an oxide of an alloy as a main component.

【0015】さらに、遮光層が2層以上の構造を有し、
基体側より第1層がNiの酸化物、Niの窒化物、Ni
の酸窒化物、NiとNiのキュリー温度を低下させるの
に有効な添加物とを主成分とする合金の酸化物、該合金
の窒化物、又は該合金の酸窒化物からなり、かつその上
に積層された第2層がNiとNiのキュリー温度を低下
させるのに有効な添加物とを主成分とする合金、第1層
より窒化度の低い該合金の窒化物、又は該合金の炭化物
からなることを特徴とする遮光層付き基板を提供する。
Further, the light shielding layer has a structure of two or more layers,
The first layer is composed of Ni oxide, Ni nitride, Ni
An oxynitride, an oxide of an alloy containing Ni and an additive effective for lowering the Curie temperature of Ni, a nitride of the alloy, or an oxynitride of the alloy, and An alloy mainly composed of Ni and an additive effective to lower the Curie temperature of Ni, a nitride of the alloy having a lower degree of nitridation than the first layer, or a carbide of the alloy. And a substrate provided with a light-shielding layer.

【0016】また、その遮光層が2層又は3層構造を有
し、NiとNiのキュリー温度を低下させるのに有効な
添加物とを主成分とする合金、該合金の窒化物、又は該
合金の炭化物からなる第2層と、その第2層の基板とは
反対側の面上に形成されたNiの酸化物又はNiとNi
のキュリー温度を低下させるのに有効な添加物とを主成
分とする合金の酸化物を主成分とする第3層とを少なく
とも有する遮光層付き基板を提供する。
Further, the light-shielding layer has a two-layer or three-layer structure, and is mainly composed of an alloy containing Ni and an additive effective for lowering the Curie temperature of Ni, a nitride of the alloy, or a nitride of the alloy. A second layer made of a carbide of an alloy, and an oxide of Ni or Ni and Ni formed on a surface of the second layer opposite to the substrate;
And a third layer mainly composed of an oxide of an alloy mainly containing an additive effective for lowering the Curie temperature of the alloy.

【0017】さらに、それら製造方法により製造された
遮光層付き基板又はそれらの遮光層付き基板の上にカラ
ーフィルタ層を形成し、さらにその上に絶縁層を介して
電極を形成してなることを特徴とするカラーフィルタ基
板、及び、そのカラーフィルタ基板と、他の電極付き基
板との間に液晶層を挟持してなることを特徴とする液晶
表示素子を提供する。
Furthermore, it is preferable that a color filter layer is formed on a substrate with a light-shielding layer manufactured by these manufacturing methods or a substrate with such a light-shielding layer, and an electrode is further formed thereon via an insulating layer. A color filter substrate characterized by providing a liquid crystal layer sandwiched between the color filter substrate and another electrode-attached substrate.

【0018】[0018]

【発明の実施の形態】本発明における遮光層は、Niと
V、Sb、Si、Ge、Mo、W、Os、Ir、Ru等
のNiのキュリー温度を低下させるのに有効な添加物
(以下「Niのキュリー温度を低下させるのに有効な添
加物」を「有効添加物」ともいう)とを主成分とする。
その合金、その合金の酸化物、窒化物、炭化物又はそれ
らの複合物が用いられる。複合物としては、酸窒化物や
酸窒炭化物等がある。このため、クロムの遮光層と同等
の遮光性能、生産性を有し、かつ環境に対する悪影響が
低下する。
BEST MODE FOR CARRYING OUT THE INVENTION The light-shielding layer according to the present invention is an additive (hereinafter referred to as an effective additive for lowering the Curie temperature of Ni and Ni, such as V, Sb, Si, Ge, Mo, W, Os, Ir and Ru). "An additive effective for lowering the Curie temperature of Ni" is also referred to as "effective additive".
The alloy, an oxide, a nitride, a carbide of the alloy, or a composite thereof is used. Examples of the composite include oxynitride and oxynitride carbide. For this reason, it has the same light-shielding performance and productivity as the chrome light-shielding layer, and the adverse effect on the environment is reduced.

【0019】図1、図2及び図3は、本発明の遮光層付
き基板の断面図を示す。図1は遮光層が3層の例を示
し、図2は遮光層が2層の例を示し、図3は遮光層が1
層の例を示す。各図において、1はガラス等の基板、2
は遮光層、3は第1層、4は第2層、5は第3層を示
す。図1の例では、第1層3、第2層4、第3層5との
3層で遮光層2を構成しているところを示す。図2の例
では、第1層3、第2層4との2層で遮光層2を構成し
ているところを示す。図3の例では、第2層4の単層で
遮光層2を構成しているところを示す。
FIG. 1, FIG. 2 and FIG. 3 are cross-sectional views of a substrate with a light shielding layer of the present invention. FIG. 1 shows an example in which the light-shielding layer has three layers, FIG. 2 shows an example in which the light-shielding layer has two layers, and FIG.
The example of a layer is shown. In each figure, 1 is a substrate such as glass, 2
Indicates a light shielding layer, 3 indicates a first layer, 4 indicates a second layer, and 5 indicates a third layer. In the example of FIG. 1, the first layer 3, the second layer 4, and the third layer 5 constitute a light-shielding layer 2. FIG. 2 shows an example in which the light-shielding layer 2 is composed of two layers, that is, a first layer 3 and a second layer 4. FIG. 3 shows an example in which the light-shielding layer 2 is constituted by a single layer of the second layer 4.

【0020】本発明における遮光層2は、Niと有効添
加物とを主成分とする材料で形成される。具体的には、
遮光度の高いNiと有効添加物の合金膜、又はNiと有
効添加物の窒化物膜又はNiと有効添加物の炭化物膜が
好適に使用できる。この遮光層は図1又は図2のように
3層又は2層構造にして使用されることが好ましい。
The light-shielding layer 2 in the present invention is formed of a material containing Ni and an effective additive as main components. In particular,
An alloy film of Ni and an effective additive having a high light shielding degree, a nitride film of Ni and an effective additive, or a carbide film of Ni and an effective additive can be suitably used. This light-shielding layer is preferably used in a three-layer or two-layer structure as shown in FIG. 1 or FIG.

【0021】この場合、1つの好ましい態様としては、
基板1側に反射を抑制するための第1層3を形成し、そ
の上に高い遮光度の第2層4を形成する。この第1層3
は、Niの酸化物膜、Niと有効添加物とを主成分とす
る合金の酸化物膜、Niの窒化物膜Niと有効添加物と
を主成分とする合金の窒化物膜、Niの酸窒化物膜、又
はNiと有効添加物とを主成分とする合金の酸窒化物膜
が好適に使用される。
In this case, one preferable embodiment is as follows.
A first layer 3 for suppressing reflection is formed on the substrate 1 side, and a second layer 4 having a high light blocking degree is formed thereon. This first layer 3
Are an oxide film of Ni, an oxide film of an alloy mainly containing Ni and an effective additive, a nitride film of Ni, a nitride film of an alloy mainly containing Ni and an effective additive, and an acid of Ni. A nitride film or an oxynitride film of an alloy mainly containing Ni and an effective additive is preferably used.

【0022】第2層4は、遮光度の高いNiと有効添加
物とを主成分とする合金膜、Niと有効添加物とを主成
分とする合金の窒化物膜、又はNiと有効添加物とを主
成分とする合金の炭化物膜が好適に使用できる。
The second layer 4 is made of an alloy film mainly composed of Ni and an effective additive, a nitride film of an alloy mainly composed of Ni and an effective additive, or Ni and an effective additive. A carbide film of an alloy mainly composed of

【0023】もう1つの好ましい態様としては、この第
2層のみの単層又は第1層と第2層との積層体の第2層
4の基板とは反対側の面上に、耐久性を向上させる目的
で第3層5を形成する。この第3層5は、Niの酸化物
膜又Niと有効添加物とを主成分とする合金の酸化物膜
とされる。これらの各層に用いられる材料は、それぞれ
の層に適した窒素や酸素や炭素の含有量にされる。
In another preferred embodiment, the durability of the single layer of the second layer alone or the second layer 4 of the laminate of the first and second layers on the side opposite to the substrate is improved. The third layer 5 is formed for the purpose of improvement. The third layer 5 is an oxide film of Ni or an oxide film of an alloy containing Ni and an effective additive as main components. The material used for each of these layers has a content of nitrogen, oxygen, and carbon suitable for each layer.

【0024】すなわち、第1層、第2層の2層ともにN
iと有効添加物とを主成分とする合金の窒化物膜にして
使用することもできる。この場合には第1層のNiと有
効添加物とを主成分とする合金の窒化物膜は、遮光度よ
りも反射光沢が少なくなるような窒素含有量とし、第2
層のNiと有効添加物とを主成分とする合金の窒化物膜
は遮光度が高くなるような窒素含有量とすることが好ま
しい。
That is, both the first layer and the second layer have N
It can also be used as a nitride film of an alloy containing i and an effective additive as main components. In this case, the nitride film of the alloy mainly composed of Ni and the effective additive of the first layer has a nitrogen content such that the reflection gloss is smaller than the degree of light shielding, and the second layer has a nitrogen content.
It is preferable that the nitride film of the alloy containing Ni and the effective additive as main components has a nitrogen content that increases the degree of light shielding.

【0025】本発明では、この遮光層の1層以上は、N
iと有効添加物とを主成分とする材料とされる。遮光層
が複数層で構成される場合には、全部の層がNiと有効
添加物とを主成分とする材料とされることが好ましい。
According to the present invention, at least one of the light-shielding layers is made of N
It is a material containing i and an effective additive as main components. When the light-shielding layer is composed of a plurality of layers, it is preferable that all the layers are made of a material mainly containing Ni and an effective additive.

【0026】この有効添加物としては、V、Sb、S
i、Ge、Mo、W、Os、Ir、及びRuから選ばれ
る1つ以上の元素を用いることが好ましい。この理由と
して、Niをマグネトロンスパッタ法で容易に成膜する
ためにはNiの磁性を低下させる必要があり、上記添加
物元素は、より少ない添加量でキュリー温度を低下させ
うる。すなわち、磁性を低下させるのに効果的であるた
めである。
As the effective additives, V, Sb, S
It is preferable to use one or more elements selected from i, Ge, Mo, W, Os, Ir, and Ru. For this reason, in order to easily form Ni into a film by the magnetron sputtering method, it is necessary to lower the magnetism of Ni, and the additive element can lower the Curie temperature with a smaller addition amount. That is, it is effective in reducing magnetism.

【0027】また、この有効添加物は、Ni合金にに対
して3〜25原子%の範囲で含有することが好ましい。
25原子%超では、耐熱性、耐酸性等の耐久性が低下し
やすい。また、3原子%未満では、ターゲットに強い磁
性が残るため、ターゲット脱着が困難となるほか、マグ
ネトロンスパッタ時にターゲット裏面の磁場がターゲッ
ト中にトラップされ、充分なスパッタ速度が得られにく
くなり、生産性が低下しやすい。
The effective additive is preferably contained in the Ni alloy in a range of 3 to 25 atomic%.
If it exceeds 25 at%, durability such as heat resistance and acid resistance tends to decrease. If the content is less than 3 atomic%, strong magnetism remains on the target, making it difficult to attach and detach the target. In addition, the magnetic field on the back of the target is trapped in the target during magnetron sputtering, making it difficult to obtain a sufficient sputtering rate, thereby increasing productivity. Tends to decrease.

【0028】特に、膜厚の厚い高い遮光目的の第2層の
形成において、安定にしかも高速に成膜できる点からき
わめて効果的である。また、第1層、第2層及び第3層
に関して、有効添加物の種類、添加量は、本発明の特徴
が損なわれない範囲で異なっていてもよい。
Particularly, in forming the second layer having a large thickness and a high light-shielding purpose, it is very effective because the film can be formed stably and at high speed. Further, with respect to the first layer, the second layer, and the third layer, the types and amounts of the effective additives may be different within a range that does not impair the features of the present invention.

【0029】また、遮光層2としては、Niと有効添加
物とを主成分とする合金膜以外に、その窒化物膜又はそ
の炭化物膜とすることによって、遮光層のエッチング速
度や反射性能等を制御しうる。これらNiと有効添加物
とを主成分とする合金膜、Niと有効添加物とを主成分
とする合金の窒化物膜、Niと有効添加物とを主成分と
する合金の炭化物膜を適宜積層して用いてもよい。
The light-shielding layer 2 is made of a nitride film or a carbide film thereof in addition to an alloy film containing Ni and an effective additive as main components. Can be controlled. An alloy film mainly composed of Ni and an effective additive, a nitride film of an alloy mainly composed of Ni and an effective additive, and a carbide film composed of an alloy mainly composed of Ni and an effective additive are appropriately laminated. You may use it.

【0030】遮光層2の膜厚は50〜1000nm程度
で使用されるが、80〜300nm程度とされることが
好ましい。80nm未満では、高い遮光性能が得られに
くく、300nm超では、膜の内部応力が増加し、膜剥
がれが発生したり、必要以上に成膜時間とエッチング時
間がかかりやすくなる。
The thickness of the light-shielding layer 2 is about 50 to 1000 nm, and preferably about 80 to 300 nm. If it is less than 80 nm, it is difficult to obtain high light-shielding performance, and if it is more than 300 nm, the internal stress of the film is increased, the film is peeled off, or the film formation time and the etching time are unnecessarily long.

【0031】この遮光層2は図2に示すように2層構造
として、1層目に反射を抑制する第1層3を形成し、そ
の上に遮光度の高い第2層4を形成することが好まし
い。この反射を抑制する第1層は、具体的には前述した
ようにNiと有効添加物の合金の酸化物膜又はNiと有
効添加物の合金の窒化物膜又はNiと有効添加物の合金
の酸窒化物膜が好適に使用される。
The light-shielding layer 2 has a two-layer structure as shown in FIG. 2, and a first layer 3 for suppressing reflection is formed on the first layer, and a second layer 4 having a high light-shielding degree is formed thereon. Is preferred. The first layer for suppressing the reflection is, as described above, specifically, an oxide film of an alloy of Ni and an effective additive, a nitride film of an alloy of Ni and an effective additive, or an alloy film of Ni and an effective additive. An oxynitride film is preferably used.

【0032】また、第1層は、前述した理由で若干の成
膜時の生産性低下が否めないが、膜厚が比較的薄いこと
から、Niの酸化物、窒化物又は酸窒化物も使用でき
る。この第1層は反射抑制性能やパターニング性能によ
り、適宜選択でき、場合によっては、設けなくともよ
い。
Although the productivity of the first layer is slightly reduced during the film formation for the above-mentioned reason, Ni oxides, nitrides or oxynitrides are also used because the film thickness is relatively small. it can. The first layer can be appropriately selected depending on the reflection suppressing performance and the patterning performance, and may not be provided in some cases.

【0033】また、遮光度の高い第2層4の上にNiと
有効添加物とを主成分とする合金の酸化物膜からなる第
3層5を形成して2層又は3層構成とすることが好まし
い。この場合も、第3層の膜厚が比較的薄いことからN
iの酸化物を使用できる。
A third layer 5 made of an oxide film of an alloy containing Ni and an effective additive as a main component is formed on the second layer 4 having a high light-shielding degree to form a two-layer or three-layer structure. Is preferred. Also in this case, since the thickness of the third layer is relatively small, N
An oxide of i can be used.

【0034】また、図1に示すように3層構成とするこ
とが最も好ましいが、反射を抑制する第1層を設けない
こともできる。この第3層は遮光層の耐久性を向上させ
る。これにより、カラーフィルタ形成工程中の洗浄やフ
ォトリソ等の工程において、遮光層の性能が低下した
り、ピンホールが発生したりする欠点が抑制される。
Although it is most preferable to have a three-layer structure as shown in FIG. 1, a first layer for suppressing reflection may not be provided. This third layer improves the durability of the light shielding layer. Thereby, in a process such as cleaning or photolithography during the color filter forming process, the disadvantages that the performance of the light-shielding layer is deteriorated and a pinhole is generated are suppressed.

【0035】第1層の膜厚は10〜100nm程度とす
ることが好ましく、10nm未満では、充分な反射防止
性能が得られにくく、100nm超では、反射抑制性能
がほとんど増加せず成膜時間とエッチング時間がかか
る。したがって、このような範囲で、要求される反射抑
制性能を満足する膜厚を選択すればよい。
The thickness of the first layer is preferably about 10 to 100 nm, and if it is less than 10 nm, it is difficult to obtain sufficient antireflection performance. It takes etching time. Therefore, a film thickness that satisfies the required reflection suppression performance may be selected within such a range.

【0036】遮光度の高い第2層は、具体的には前述し
たように遮光度の高いNiと有効添加物との合金膜又は
Niと有効添加物との合金の窒化物膜又はNiと有効添
加物との合金の炭化物膜が好適に使用される。この第2
層は、遮光度やパターニング性能により、適宜材質を選
択して用いればよい。この第2層の膜厚は前述のように
50〜1000nm程度とされる。
The second layer having a high light-shielding degree is, as described above, specifically, an alloy film of Ni and an effective additive or a nitride film of an alloy of Ni and an effective additive or a film of Ni having an effective light-shielding degree. A carbide film of an alloy with an additive is preferably used. This second
The layer may be appropriately selected and used depending on the degree of light shielding and patterning performance. The thickness of the second layer is set to about 50 to 1000 nm as described above.

【0037】第3層の膜厚は1〜50nm程度とするこ
とが好ましく、1nm未満では、高い耐久性能が得られ
にくく、50nm超では、遮光膜のパターニング性が低
下するので好ましくない。したがって、このような範囲
内で、要求される耐久性を満足する膜厚を選択すればよ
い。
The thickness of the third layer is preferably about 1 to 50 nm, and if it is less than 1 nm, it is difficult to obtain high durability, and if it exceeds 50 nm, the patterning property of the light-shielding film is undesirably reduced. Therefore, a film thickness satisfying the required durability may be selected within such a range.

【0038】Niと有効添加物を主成分とする膜及びN
i膜は、含有する酸素、窒素、炭素に対して、Niや有
効添加物の成分が多いほど遮光性が高くなり、反面、含
有する酸素の量が多いほど透明性が高くなる。また、窒
素についても酸素と同様にその含有量が増えるほど透明
性が高くなるが、酸素と比較するとその効果は小さく、
透明度や屈折率を精密に制御するのに適する。他方、炭
素はその含有量が高くなるほどエッチング速度が小さく
なる特徴がある。
A film containing Ni and an effective additive as main components and N
The i-film has a higher light-shielding property as the content of Ni and the effective additive with respect to the contained oxygen, nitrogen, and carbon increases. On the other hand, the transparency increases as the amount of oxygen contained increases. Also, as with oxygen, the higher the content of nitrogen, the higher the transparency, but the effect is small compared to oxygen,
Suitable for precisely controlling transparency and refractive index. On the other hand, as the carbon content increases, the etching rate decreases.

【0039】これらの特徴を利用して、所望の遮光性と
パターニング性、さらには反射抑制性能を満足するよう
に遮光層の材料であるNiや有効添加物に対する酸素、
窒素、炭素の添加量を選択すればよい。
Utilizing these features, oxygen to Ni, which is a material of the light-shielding layer, and an effective additive, so as to satisfy desired light-shielding properties and patterning properties, and furthermore, anti-reflection performance.
What is necessary is just to select the addition amount of nitrogen and carbon.

【0040】本発明の遮光層の作成方法としては、異
物、ピンホール欠点が少なく、遮光性能も得やすいとい
う理由から、マグネトロンスパッタ法で作製されるのが
好ましい。特に、マグネトロンスパッタ法の場合に、N
iの磁性の低下により高い効果が得られる。
As a method of forming the light-shielding layer of the present invention, it is preferable that the light-shielding layer is formed by a magnetron sputtering method because there are few foreign matters and pinhole defects and light-shielding performance can be easily obtained. In particular, in the case of the magnetron sputtering method, N
A high effect can be obtained by lowering the magnetism of i.

【0041】この際、酸化物膜、窒化物膜、酸窒化物
膜、炭化物膜を得る場合には、スパッタガス中に、酸
素、窒素、メタン、二酸化炭素ガス等を適量添加して作
製される。具体的には、遮光層が所望の性能を得るよう
に、酸素、窒素、メタン、二酸化炭素ガス等の流量を変
えて実験的に定めればよい。
At this time, when obtaining an oxide film, a nitride film, an oxynitride film, and a carbide film, they are prepared by adding an appropriate amount of oxygen, nitrogen, methane, carbon dioxide gas or the like to a sputtering gas. . Specifically, the flow rate of oxygen, nitrogen, methane, carbon dioxide gas, or the like may be changed experimentally so that the light-shielding layer obtains desired performance.

【0042】遮光層のパターニング方法としては、遮光
層上にフォトリソグラフィ法により所望のレジストパタ
ーンを形成した後、酸化剤を含有した酸性水溶液を用い
て、エッチング、パターニングを行えばよい。エッチャ
ントとしては、硝酸第二セリウムアンモニウムと過塩素
酸からなる水溶液が挙げられるが、これに限定されな
い。この後、レジストを溶解剥離し遮光層を形成する。
As a method of patterning the light-shielding layer, after a desired resist pattern is formed on the light-shielding layer by photolithography, etching and patterning may be performed using an acidic aqueous solution containing an oxidizing agent. The etchant includes, but is not limited to, an aqueous solution comprising ceric ammonium nitrate and perchloric acid. Thereafter, the resist is dissolved and separated to form a light-shielding layer.

【0043】本発明では、遮光層の材料に、Niと有効
添加物、すなわちV、Sb、Si、Ge、Mo、W、O
s、Ir、Ruのうちいずれか1つ以上の元素とを主成
分とする材料を用いることによって、Niの持つ優れた
特性を損なわずに、Niの磁性を弱め、マグネトロンス
パッタ法による遮光層の成膜が効率よく行える。
In the present invention, Ni and effective additives, ie, V, Sb, Si, Ge, Mo, W, O
By using a material containing at least one of s, Ir, and Ru as a main component, the magnetism of Ni can be reduced without impairing the excellent characteristics of Ni, and the light shielding layer can be formed by magnetron sputtering. Film formation can be performed efficiently.

【0044】従来のクロム系遮光膜のパターニングに用
いられる硝酸第二セリウムアンモニウムと過塩素酸系の
エッチャントが使用でき、クロム系膜と同等のパターニ
ング性能が得られる。また、耐熱、耐アルカリ性につい
ても、クロム膜系と同等の耐久性が得られる。さらに、
容易に酸化、窒化、炭化の度合い等の制御が行えるの
で、クロム系膜と同等の反射抑制性能が容易に得られる
利点もある。
A ceric ammonium nitrate and perchloric acid-based etchant used for patterning a conventional chromium-based light-shielding film can be used, and patterning performance equivalent to that of a chromium-based film can be obtained. Further, the same durability as the chromium film system can be obtained in heat resistance and alkali resistance. further,
Since the degree of oxidation, nitridation, and carbonization can be easily controlled, there is also an advantage that reflection suppression performance equivalent to that of a chromium-based film can be easily obtained.

【0045】図4は、本発明の遮光層付き基板を用いた
カラーフィルタ基板の断面図である。図1、図2及び図
3では、遮光層を説明するために遮光層2の厚みを極端
に厚く説明したのに対し、図4では他の部材との関係を
示すために、遮光層2の厚みを薄くして記載している。
図4において、1は基板、2は遮光層、6はその上に形
成されたカラーフィルタ層、7はその上の絶縁層、8は
その上の電極を示す。
FIG. 4 is a cross-sectional view of a color filter substrate using the substrate with a light-shielding layer of the present invention. 1, 2, and 3, the thickness of the light-shielding layer 2 is extremely thick to explain the light-shielding layer, whereas FIG. 4 shows the relationship between the light-shielding layer 2 and other members. It is described with the thickness reduced.
In FIG. 4, 1 is a substrate, 2 is a light shielding layer, 6 is a color filter layer formed thereon, 7 is an insulating layer thereon, and 8 is an electrode thereon.

【0046】カラーフィルタ層6は、公知のカラーフィ
ルタ製造方法で製造されればよく、顔料分散法、印刷
法、電着法、インクジェット法等の製造方法がある。こ
の図では、遮光層と一部が重なるように形成されている
が、ぴったり密接していてもよく、カラーフィルタ層同
士が密接していてもよい。通常はRGB3色のカラーフ
ィルタ層が配置されるが、これに限らない。
The color filter layer 6 may be manufactured by a known color filter manufacturing method, and includes a manufacturing method such as a pigment dispersion method, a printing method, an electrodeposition method, and an ink jet method. In this drawing, the light-shielding layer is formed so as to partially overlap with the light-shielding layer. However, the light-shielding layer may be in close contact with each other, or the color filter layers may be in close contact with each other. Usually, a color filter layer of three colors of RGB is arranged, but it is not limited to this.

【0047】カラーフィルタ層上の絶縁層7は、通常は
カラーフィルタ層の凹凸をならす平坦化層の役目も果た
す。具体的には、アクリル樹脂、エポキシ樹脂、シリコ
ーン樹脂、ポリイミド、ポリアミド等の樹脂が使用され
る。さらにこの層の上に、電極との接合性を向上するた
め等の目的でSiO2 、SiN、TiO2 等の無機物の
膜を形成してもよい。
The insulating layer 7 on the color filter layer usually also serves as a flattening layer for smoothing the unevenness of the color filter layer. Specifically, resins such as acrylic resin, epoxy resin, silicone resin, polyimide, and polyamide are used. Further, an inorganic film such as SiO 2 , SiN, or TiO 2 may be formed on this layer for the purpose of improving the bonding property with the electrode.

【0048】電極8は、ITO(In23 −SnO
2 )、SnO2 、ZnO等の透明電極が使用できる。さ
らに、液晶表示素子として使用する場合には、この電極
と絶縁層上にポリイミド、ポリアミド等の配向膜を塗布
乾燥し、ラビング等により配向処理を施す。液晶表示素
子の場合には、このようにして形成したカラーフィルタ
基板と別途製造した電極付き基板とを電極面が相対向す
るように配置して、その間に液晶層を挟持する。
The electrode 8 is made of ITO (In 2 O 3 --SnO).
2 ), transparent electrodes such as SnO 2 and ZnO can be used. Further, when used as a liquid crystal display element, an alignment film such as polyimide or polyamide is applied and dried on the electrode and the insulating layer, and subjected to an alignment treatment by rubbing or the like. In the case of a liquid crystal display element, the color filter substrate formed in this way and a separately manufactured substrate with electrodes are arranged so that the electrode surfaces face each other, and a liquid crystal layer is sandwiched therebetween.

【0049】この電極間に挟持される液晶層としては、
通常のツイステッドネマチック(TN)型液晶表示素子
やSTN型液晶表示素子等用にはネマチック液晶が用い
られる。この他、2色性色素を用いたゲストホスト液
晶、コレステリック液晶、強誘電性液晶等の液体状液晶
の他、固体状の高分子液晶や、樹脂マトリックス中に液
晶が分散している分散型液晶も使用できる。
As the liquid crystal layer sandwiched between the electrodes,
Nematic liquid crystals are used for ordinary twisted nematic (TN) type liquid crystal display devices, STN type liquid crystal display devices, and the like. In addition, liquid crystal liquids such as guest-host liquid crystal, cholesteric liquid crystal, and ferroelectric liquid crystal using dichroic dye, solid polymer liquid crystal, and dispersed liquid crystal in which liquid crystal is dispersed in resin matrix Can also be used.

【0050】上記の説明では、液晶表示素子に用いる例
を説明したが、本発明の遮光層付き基板は、他の遮光層
付きの素子、特に表示素子、たとえばPDP、ELD、
エレクトロクロミック表示素子(ECD)等のフラット
パネルディスプレイにも適応しうる。
In the above description, an example in which the present invention is used for a liquid crystal display element has been described. However, the substrate with a light shielding layer according to the present invention can be used for other elements with a light shielding layer, especially display elements such as PDP, ELD,
It can also be applied to a flat panel display such as an electrochromic display (ECD).

【0051】[0051]

【実施例】【Example】

例1〜13 ガラス基板(旭硝子社製「ANガラス」)上に表1に示
す組成と膜構成の遮光層を形成した。第1層はガラス基
板側の層で反射抑制のための層とし、例1、例4、例7
及び例13では形成していない。第2層は遮光目的の層
であり、必ず形成した。また、例3、例6、例9及び例
11については、耐湿性向上を目的とした第3層を形成
した。
Examples 1 to 13 A light-shielding layer having the composition and film configuration shown in Table 1 was formed on a glass substrate ("AN glass" manufactured by Asahi Glass Co., Ltd.). The first layer is a layer on the glass substrate side for suppressing reflection, and is a first layer, a fourth layer, and a seventh layer.
And in Example 13, it is not formed. The second layer is a layer for the purpose of shielding light, and was always formed. In Examples 3, 6, 9, and 11, a third layer was formed for the purpose of improving moisture resistance.

【0052】遮光層の成膜方法は、マグネトロンスパッ
タ法により形成した。ターゲットには、それぞれ表1に
示すNiと有効添加物とを主成分とする金属ターゲット
を用いた。表1と表2中の添加物の欄はターゲットの組
成を表し、添加物の添加量をNiと添加物との合量に対
する原子%で表している。
The light shielding layer was formed by magnetron sputtering. As the targets, metal targets mainly containing Ni and effective additives shown in Table 1 were used. The columns of the additives in Tables 1 and 2 show the composition of the target, and the amount of the additives is represented by atomic% with respect to the total amount of Ni and the additives.

【0053】「ガス1」及び「ガス3」はそれぞれ第1
層スパッタ時及び第3層スパッタ時のアルゴン(Ar)
ガス/酸素ガスの流量比を示す。なお、第2層スパッタ
時のガス「ガス2」は、全て同じ条件であるAr/酸素
=100/0で行った。「膜1」及び「膜3」はそれぞ
れ第1層及び第3層の膜厚(nm)を示す。これも第2
層の膜厚「膜2」は、全て一定100nmとした。
"Gas 1" and "Gas 3" are the first
Argon (Ar) during layer sputtering and third layer sputtering
The flow ratio of gas / oxygen gas is shown. The gas “gas 2” at the time of the second layer sputtering was performed under the same conditions of Ar / oxygen = 100/0. “Film 1” and “Film 3” indicate the thicknesses (nm) of the first and third layers, respectively. This is also the second
The film thickness of each layer “film 2” was all set to a constant 100 nm.

【0054】遮光目的の第2層の合金膜を成膜する場合
には、アルゴンガスのみで3mTorrの雰囲気で成膜
し、第1層の酸化物膜を成膜する際には、表1の「ガス
1」の流量比の欄に示すようにアルゴンガスに酸素を添
加し、全スパッタガス圧3mTorrで成膜した。第3
層については、「ガス3」に示すように酸素ガスのみで
3mTorrの雰囲気で成膜した。それぞれの膜の膜厚
は、スパッタ電力及び成膜時間により調整した。
When forming the second layer alloy film for the purpose of shading, the film is formed in an atmosphere of 3 mTorr using only argon gas. As shown in the column of the flow ratio of "gas 1", oxygen was added to argon gas, and a film was formed at a total sputtering gas pressure of 3 mTorr. Third
As for the layer, as shown in “Gas 3”, a film was formed using only oxygen gas in an atmosphere of 3 mTorr. The thickness of each film was adjusted by the sputtering power and the film formation time.

【0055】例11は、第1層及び第3層にNiターゲ
ットを用いNi酸化物を形成し、第2層には、NiにV
(V)を10原子%添加したターゲットを用いて成膜し
た例である。例1〜例10に比して、第1層及び第3層
の成膜速度は低下するものの膜厚が比較的薄いため、第
1層から第3層までを形成する全成膜時間は、問題なる
ほど長くはならなかった。
In Example 11, a Ni oxide was formed using a Ni target for the first and third layers, and V was added to Ni for the second layer.
This is an example in which a film is formed using a target to which (V) is added at 10 atomic%. As compared with Examples 1 to 10, although the film formation rates of the first and third layers are reduced, the film thicknesses are relatively thin, so the total film formation time for forming the first to third layers is as follows: It wasn't long enough.

【0056】例12は、NiにSb(Sb)を30原子
%添加した比較例であり、第1層として反射抑制層、第
2層に金属遮光層を設けた例である。例13は、Ni1
00%の比較例であり、強磁性体であるためカソード磁
場がトラップされ、グロー放電が安定に持続できず、成
膜速度も遅いために、成膜を断念した。例14は従来例
であり、第1層として酸化クロムの反射抑制層、第2層
としてクロム層を設けた例である。
Example 12 is a comparative example in which Sb (Sb) was added at 30 atomic% to Ni, in which a reflection suppressing layer was provided as a first layer and a metal light shielding layer was provided as a second layer. Example 13 uses Ni1
This is a comparative example of 00%. Since the cathode magnetic field is trapped due to the ferromagnetic material, the glow discharge cannot be stably maintained and the film forming speed is slow, the film formation was abandoned. Example 14 is a conventional example in which a chromium oxide reflection suppressing layer is provided as a first layer and a chromium layer is provided as a second layer.

【0057】このようにして成膜した遮光膜付き基板の
光学特性、耐アルカリ性、耐酸性、耐湿性、耐熱性、パ
ターニング性を調べた。光学特性は、初期値であり、遮
光度としてのオプティカルデンシティOD値(透過率の
逆数の対数)、視感反射率Y値及び反射率(450〜6
50nmの波長域での最も低い反射率(%))を測定し
た。その結果を表2に示す。
The optical characteristics, alkali resistance, acid resistance, moisture resistance, heat resistance, and patterning properties of the substrate with a light-shielding film thus formed were examined. The optical characteristics are initial values, the optical density OD value (the logarithm of the reciprocal of the transmittance), the luminous reflectance Y value, and the reflectance (450 to 6) as the degree of light blocking.
The lowest reflectance (%) in the 50 nm wavelength range was measured. Table 2 shows the results.

【0058】耐アルカリ性評価は、70℃、5重量%N
aOH水溶液に30分浸漬後に、OD値の変化が0.1
以下でOKとして判断した。耐酸性評価は、室温、5重
量%塩酸水溶液に30分浸漬後に、膜剥れのないものを
OKとして判断した。耐湿性評価は、60℃、90%R
H、24時間放置後に、OD値の変化が0.1以下でO
Kとして判断した。耐熱性評価は、250℃、30分大
気中加熱後に、OD値の変化が0.1以下で、Y値の変
化が0.5以下のものをOKとして判断した。
The alkali resistance was evaluated at 70 ° C., 5% by weight N
After immersion in an aOH aqueous solution for 30 minutes, the change in the OD value is 0.1%.
It was judged as OK below. In the evaluation of acid resistance, samples without film peeling after immersion in a 5% by weight hydrochloric acid aqueous solution at room temperature for 30 minutes were judged as OK. The moisture resistance evaluation is 60 ° C., 90% R
H, after standing for 24 hours, change in OD value
It was judged as K. The heat resistance was evaluated as OK if the change in the OD value was 0.1 or less and the change in the Y value was 0.5 or less after heating in the air at 250 ° C. for 30 minutes.

【0059】パターニング性評価は、次のようにして行
った。遮光層付き基板にレジストを塗布し、フォトリソ
グラフィ法により格子幅20μm、スペース部130×
300μmの格子状のレジストパターンを形成し、硝酸
第二セリウムアンモニウムが165g、過塩素酸が45
ml、水が1000mlとからなるエッチャントを用い
て、パターニングした。このパターニングされた遮光層
のパターンエッジのサイドエッチング量1.5μm以
下、エッチング残渣がないものをOKとして判断した。
The evaluation of the patterning property was performed as follows. A resist is applied to a substrate with a light-shielding layer, and a lattice width of 20 μm and a space portion of 130 ×
A grid-like resist pattern of 300 μm is formed, ceric ammonium nitrate is 165 g, and perchloric acid is 45
Patterning was performed using an etchant consisting of 1,000 ml of water and 1,000 ml of water. Those having a side etching amount of 1.5 μm or less at the pattern edge of the patterned light-shielding layer and having no etching residue were judged as OK.

【0060】この結果、光学特性は表2に示すように、
従来から用いられている例14のクロム膜系とほぼ同じ
性能が得られた。特に遮光度をログスケールで表したO
D値はいずれも高い値が得られた。
As a result, the optical characteristics are as shown in Table 2.
Approximately the same performance as the chromium film system of Example 14 conventionally used was obtained. In particular, O which expresses the degree of shading on a log scale
High values were obtained for all D values.

【0061】耐アルカリ性、耐酸性、耐湿性、耐熱性、
パターニング性については、本発明の実施例1から例1
1と従来例14はOKであり、問題がなかった。しか
し、例12は、耐熱性試験後に光学特性の劣化、耐酸性
試験後に膜剥がれが見られた。
Alkali resistance, acid resistance, moisture resistance, heat resistance,
Regarding the patterning properties, Examples 1 to 1 of the present invention
1 and Conventional Example 14 were OK and had no problem. However, in Example 12, optical characteristics deteriorated after the heat resistance test, and film peeling was observed after the acid resistance test.

【0062】表2に示すように、Niのキュリー温度を
低下させるのに有効な添加物濃度が、Niと有効添加物
の総重量の3〜25原子%の範囲の例1〜例11では、
従来のクロム系遮光層と同等の特性を示した。
As shown in Table 2, in Examples 1 to 11 in which the additive concentration effective for lowering the Curie temperature of Ni is in the range of 3 to 25 atomic% of the total weight of Ni and the effective additive,
It exhibited the same characteristics as the conventional chrome-based light-shielding layer.

【0063】さらに、温水煮沸試験を実施すると、第3
層を設けない例1、例2、例4、例5、例7、例8及び
例10では、1時間の温水煮沸試験後にピンホール欠点
が発生したのに対して、第3層を設けた例3、例6、例
9及び例11では、3時間の温水煮沸試験後にも何の変
化も見られなかった。以上のように、第2層の金属遮光
層の表面を金属酸化物層で被覆することにより、さらに
耐久性を向上させることができた。
Further, when a hot water boiling test is carried out,
In Example 1, Example 2, Example 4, Example 5, Example 7, Example 8, and Example 10 having no layer, a pinhole defect occurred after a 1 hour warm water boiling test, whereas a third layer was provided. In Examples 3, 6, 9, and 11, no change was observed even after the hot water boiling test for 3 hours. As described above, by covering the surface of the second metal light-shielding layer with the metal oxide layer, the durability could be further improved.

【0064】[0064]

【表1】 [Table 1]

【0065】[0065]

【表2】 [Table 2]

【0066】[0066]

【発明の効果】本発明の遮光膜付き基板は、前述のフラ
ットパネルディスプレイ用の遮光層材料として、クロム
を一切使用しない。すなわち、NiとNiのキュリー温
度を低下させるのに有効な添加物とを主成分とする材料
を使用することにより、マグネトロンスパッタ法で安定
して高速で成膜できる。
The substrate with a light-shielding film of the present invention does not use any chromium as the light-shielding layer material for the flat panel display described above. That is, by using a material mainly composed of Ni and an additive effective for lowering the Curie temperature of Ni, a film can be stably formed at a high speed by the magnetron sputtering method.

【0067】特に、V、Sb、Si、Ge、Mo、W、
Os、Ir、Ruのうちいずれか1つ以上の元素とを主
成分とする材料を用いることによって、従来のクロム系
遮光層のもつ光学特性、パターニング性、耐久性と同等
の性能を有し、しかも従来の成膜方法、パターニング方
法で使用できる遮光膜付き基板を容易に得られる。
In particular, V, Sb, Si, Ge, Mo, W,
By using a material containing at least one of Os, Ir, and Ru as a main component, the chromium-based light-shielding layer has the same optical properties, patterning properties, and durability as conventional chromium-based light-shielding layers, In addition, a substrate with a light-shielding film that can be used in the conventional film forming method and patterning method can be easily obtained.

【0068】本発明は、本発明の効果を損なわない範囲
内で、種々の応用が可能である。
The present invention can be applied to various applications within a range that does not impair the effects of the present invention.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の遮光層付き基板の好ましい例の断面
図。
FIG. 1 is a cross-sectional view of a preferred example of a substrate with a light-shielding layer of the present invention.

【図2】本発明の遮光層付き基板の断面図。FIG. 2 is a sectional view of a substrate with a light-shielding layer of the present invention.

【図3】本発明の遮光層付き基板の他の好ましい例の断
面図。
FIG. 3 is a cross-sectional view of another preferred example of the substrate with a light-shielding layer of the present invention.

【図4】本発明のカラーフィルタ基板の断面図。FIG. 4 is a cross-sectional view of the color filter substrate of the present invention.

【符号の説明】[Explanation of symbols]

1:基板 2:遮光層 3:第1層 4:第2層 5:第3層 6:カラーフィルタ層 7:絶縁層 8:電極 1: substrate 2: light shielding layer 3: first layer 4: second layer 5: third layer 6: color filter layer 7: insulating layer 8: electrode

Claims (9)

【特許請求の範囲】[Claims] 【請求項1】基板表面にニッケル(Ni)系の遮光層を
形成する遮光層付き基板の製造方法において、遮光層が
NiとNiのキュリー温度を低下させるのに有効な添加
物とを主成分とする材料を用いてマグネトロンスパッタ
法により形成されることを特徴とする遮光層付き基板の
製造方法。
1. A method for manufacturing a substrate with a light-shielding layer, wherein a nickel (Ni) -based light-shielding layer is formed on the surface of the substrate, wherein the light-shielding layer comprises Ni and an additive effective for lowering the Curie temperature of Ni as main components. A method for producing a substrate with a light-shielding layer, wherein the substrate is formed by a magnetron sputtering method using the material described above.
【請求項2】Niのキュリー温度を低下させるのに有効
な添加物として、バナジウム(V)、アンチモン(S
b)、シリコン(Si)、ゲルマニウム(Ge)、モリ
ブデン(Mo)、タングステン(W)、オスミウム(O
s)、イリジウム(Ir)、およびルテニウム(Ru)
から選ばれる1つ以上の元素を用いる請求項1記載の遮
光層付き基板の製造方法。
2. Additives effective for lowering the Curie temperature of Ni include vanadium (V) and antimony (S).
b), silicon (Si), germanium (Ge), molybdenum (Mo), tungsten (W), osmium (O
s), iridium (Ir), and ruthenium (Ru)
The method for producing a substrate with a light-shielding layer according to claim 1, wherein one or more elements selected from the group consisting of:
【請求項3】形成される遮光層のうち1層以上が、Ni
とNiのキュリー温度を低下させるのに有効な添加物と
を主成分とする合金、該合金の窒化物、該合金の酸化
物、該合金の炭化物又はそれらの複合物の層である請求
項1又は2記載の遮光層付き基板の製造方法。
3. A light-shielding layer to be formed, wherein at least one layer is made of Ni.
2. A layer of an alloy, a nitride of the alloy, an oxide of the alloy, a carbide of the alloy, or a composite thereof, containing, as a main component, an additive effective for lowering the Curie temperature of Ni. Or the manufacturing method of the board | substrate with a light shielding layer of Claim 2.
【請求項4】遮光層が2層以上の構造を有し、基体側よ
り第1層がNiの酸化物、Niの窒化物、Niの酸窒化
物、NiとNiのキュリー温度を低下させるのに有効な
添加物とを主成分とする合金の酸化物、該合金の窒化
物、又は該合金の酸窒化物からなり、かつその上に積層
された第2層がNiとNiのキュリー温度を低下させる
のに有効な添加物とを主成分とする合金、第1層より窒
化度の低い該合金の窒化物、又は該合金の炭化物からな
る請求項1、2又は3記載の遮光層付き基板の製造方
法。
4. The light-shielding layer has a structure of two or more layers, and a first layer from the base side lowers Ni oxide, Ni nitride, Ni oxynitride, and Curie temperature of Ni and Ni. And a second layer formed on the oxide of an alloy containing an additive effective as a main component, a nitride of the alloy, or an oxynitride of the alloy. 4. The substrate with a light-shielding layer according to claim 1, wherein the substrate is made of an alloy mainly containing an additive effective for lowering, a nitride of the alloy having a lower degree of nitridation than the first layer, or a carbide of the alloy. Manufacturing method.
【請求項5】遮光層が2層又は3層構造を有し、Niと
Niのキュリー温度を低下させるのに有効な添加物とを
主成分とする合金、該合金の窒化物、又は該合金の炭化
物からなる第2層と、その第2層の基板とは反対側の面
上に形成されたNiの酸化物又はNiとNiのキュリー
温度を低下させるのに有効な添加物とを主成分とする合
金の酸化物を主成分とする第3層とを少なくとも有する
請求項1、2、3又は4記載の遮光層付き基板の製造方
法。
5. An alloy, wherein the light-shielding layer has a two-layer or three-layer structure and is mainly composed of Ni and an additive effective for lowering the Curie temperature of Ni, a nitride of the alloy, or the alloy. A second layer made of a carbide of the above, and an oxide of Ni or an additive effective for lowering the Curie temperature of Ni and Ni formed on the surface of the second layer opposite to the substrate. 5. The method for producing a substrate with a light-shielding layer according to claim 1, comprising at least a third layer containing an oxide of an alloy as a main component.
【請求項6】遮光層が2層以上の構造を有し、基体側よ
り第1層がNiの酸化物、Niの窒化物、Niの酸窒化
物、NiとNiのキュリー温度を低下させるのに有効な
添加物とを主成分とする合金の酸化物、該合金の窒化
物、又は該合金の酸窒化物からなり、かつその上に積層
された第2層がNiとNiのキュリー温度を低下させる
のに有効な添加物とを主成分とする合金、第1層より窒
化度の低い該合金の窒化物、又は該合金の炭化物からな
ることを特徴とする遮光層付き基板。
6. The light-shielding layer has a structure of two or more layers, and a first layer from the base side lowers Ni oxide, Ni nitride, Ni oxynitride, and the Curie temperature of Ni and Ni. And a second layer formed on the oxide of an alloy containing an additive effective as a main component, a nitride of the alloy, or an oxynitride of the alloy. A substrate with a light-shielding layer, comprising: an alloy mainly containing an additive effective for lowering the content, a nitride of the alloy having a lower degree of nitridation than the first layer, or a carbide of the alloy.
【請求項7】遮光層が2層又は3層構造を有し、Niと
Niのキュリー温度を低下させるのに有効な添加物とを
主成分とする合金、該合金の窒化物、又は該合金の炭化
物からなる第2層と、その第2層の基板とは反対側の面
上に形成されたNiの酸化物又はNiとNiのキュリー
温度を低下させるのに有効な添加物とを主成分とする合
金の酸化物を主成分とする第3層とを少なくとも有する
請求項6記載の遮光層付き基板。
7. An alloy, wherein the light-shielding layer has a two-layer or three-layer structure, and is mainly composed of Ni and an additive effective for lowering the Curie temperature of Ni, a nitride of the alloy, or the alloy. A second layer made of a carbide of the above, and an oxide of Ni or an additive effective for lowering the Curie temperature of Ni and Ni formed on the surface of the second layer opposite to the substrate. 7. The substrate with a light-blocking layer according to claim 6, comprising at least a third layer containing an oxide of an alloy as a main component.
【請求項8】請求項1、1、2、4もしくは又は5記載
の製造方法により製造された遮光層付き基板又は請求項
6もしくは7記載の遮光層付き基板の上にカラーフィル
タ層を形成し、さらにその上に絶縁層を介して電極を形
成してなることを特徴とするカラーフィルタ基板。
8. A color filter layer is formed on a substrate with a light-shielding layer manufactured by the method of claim 1, 1, 2, 4, or 5, or a substrate with a light-shielding layer according to claim 6 or 7. And a color filter substrate further comprising electrodes formed thereon via an insulating layer.
【請求項9】請求項8記載のカラーフィルタ基板と、他
の電極付き基板との間に液晶層を挟持してなることを特
徴とする液晶表示素子。
9. A liquid crystal display element comprising a liquid crystal layer sandwiched between the color filter substrate according to claim 8 and another substrate with electrodes.
JP17472997A 1997-06-30 1997-06-30 Substrate with light shielding layer and its production as well as color filter substrate and liquid crystal display element Pending JPH1124058A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17472997A JPH1124058A (en) 1997-06-30 1997-06-30 Substrate with light shielding layer and its production as well as color filter substrate and liquid crystal display element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17472997A JPH1124058A (en) 1997-06-30 1997-06-30 Substrate with light shielding layer and its production as well as color filter substrate and liquid crystal display element

Publications (1)

Publication Number Publication Date
JPH1124058A true JPH1124058A (en) 1999-01-29

Family

ID=15983644

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010054927A (en) * 1999-12-08 2001-07-02 박종섭 Liquid crystal display with black matrix of low reflectivity
KR100720432B1 (en) * 2000-07-20 2007-05-22 엘지.필립스 엘시디 주식회사 Film for intercepting light in Liquid Crystal Display
JP2008158479A (en) * 2006-11-30 2008-07-10 Sumitomo Metal Mining Co Ltd Heat-resistant and light-shielding film, manufacturing method thereof and diaphragm or light quantity adjusting device using the film
US7604717B2 (en) * 1999-05-20 2009-10-20 Saint-Gobain Glass France Electrochemical device
JP2010001518A (en) * 2008-06-19 2010-01-07 Sumitomo Metal Mining Co Ltd Method of manufacturing heat-resistant and light-shielding film, and heat-resistant and light-shielding film
JP2015196298A (en) * 2014-03-31 2015-11-09 住友金属鉱山株式会社 Conductive substrate and method for manufacturing conductive substrate

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7604717B2 (en) * 1999-05-20 2009-10-20 Saint-Gobain Glass France Electrochemical device
KR20010054927A (en) * 1999-12-08 2001-07-02 박종섭 Liquid crystal display with black matrix of low reflectivity
KR100720432B1 (en) * 2000-07-20 2007-05-22 엘지.필립스 엘시디 주식회사 Film for intercepting light in Liquid Crystal Display
JP2008158479A (en) * 2006-11-30 2008-07-10 Sumitomo Metal Mining Co Ltd Heat-resistant and light-shielding film, manufacturing method thereof and diaphragm or light quantity adjusting device using the film
JP2010001518A (en) * 2008-06-19 2010-01-07 Sumitomo Metal Mining Co Ltd Method of manufacturing heat-resistant and light-shielding film, and heat-resistant and light-shielding film
JP2015196298A (en) * 2014-03-31 2015-11-09 住友金属鉱山株式会社 Conductive substrate and method for manufacturing conductive substrate

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