KR100714000B1 - Organic light-emitting display device and the preparing method of the same - Google Patents

Abstract

The present invention relates to an organic light emitting display device capable of dissipating heat generated by irradiating light to a frit to the outside, and a manufacturing method thereof. According to an aspect of the present invention, an organic light emitting display device includes a first substrate including an organic light emitting diode array and a metal layer spaced apart from the array to surround an outer portion of the substrate; A second substrate encapsulating the first substrate; And a frit extending partially overlapping with the metal layer inside the metal layer to seal and adhere the gap between the first substrate and the second substrate.

Organic light emitting display, metal layer, frit, sealing board

Description

Organic light-emitting display device and method of manufacturing the same {Organic light-emitting display device and the preparing method of the same}

1 is a cross-sectional view illustrating a sealing structure of a conventional organic light emitting device.

2A is a plan view of an organic light emitting display panel according to an exemplary embodiment of the present invention.

FIG. 2B is a cross sectional view along line AA ′ in FIG. 2A;

FIG. 2C is a cross sectional view along line BB ′ of FIG. 2A;

3 is a plan view of an organic light emitting display device according to an exemplary embodiment of the present invention.

4 is a cross-sectional view of an organic light emitting display device according to an embodiment of the present invention.

5A is a plan view of an organic light emitting display panel in which a metal layer partially overlapping a frit is formed according to an exemplary embodiment of the present invention.

FIG. 5B is a cross sectional view along line AA ′ in FIG. 5A;

FIG. 5C is a cross sectional view along line BB ′ of FIG. 5A;

6A through 6C are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to an embodiment of the present invention.

7A to 7D are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to another embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

100: evaporation substrate 150: frit

160: metal layer 200: sealing substrate

300: deposition substrate ledger 400: sealed substrate ledger

The present invention relates to an organic light emitting display device for sealing an evaporation substrate and an encapsulation substrate with a frit and a method of manufacturing the same. More particularly, the present invention relates to an organic light emitting display capable of dissipating heat generated by irradiating light to a frit to the outside. An apparatus and a method of manufacturing the same.

In an organic light emitting display device, an organic light emitting layer is positioned between electrodes facing each other, and when a voltage is applied between both electrodes, electrons injected from one electrode and holes injected from the other electrode are combined in the organic light emitting layer. Through the combination of the light emitting molecules of the light emitting layer once excited and return to the ground state is one of the flat panel display device to emit the light emitted by the light.

The organic light emitting display device having such a light emission principle is attracting attention as a next generation display because of its excellent visibility, weight reduction, thin film thickness, and low voltage operation.

One of the problems of the organic light emitting display device is that it deteriorates when water penetrates into the organic material constituting the organic light emitting device. FIG. 1 is a cross-sectional view illustrating an encapsulation structure of an organic light emitting device to solve the conventional problem.

Accordingly, the organic light emitting display device includes a vapor deposition substrate 1, an encapsulation substrate 2, a sealing material 3, and a moisture absorbing material 4. The deposition substrate 1 is a substrate including a pixel region including at least one organic light emitting element and a non-pixel region formed at an outer edge of the pixel region. The encapsulation substrate 2 is formed of an organic light emitting element of the deposition substrate 1. It is adhered to the formed surface.

In order to bond the deposition substrate 1 and the encapsulation substrate 2, a sealing material 3 is applied along the periphery of the deposition substrate 1 and the encapsulation substrate 2, and the encapsulant 3 is cured by UV irradiation or the like. do. In addition, the encapsulant substrate 2 includes a hygroscopic material 4, which is intended to remove hydrogen, oxygen, moisture, or the like, which penetrate between fine gaps even when the encapsulant 3 is applied.

However, even in such an organic light emitting display device, the sealing material 3 cannot completely prevent the penetration of moisture, and the absorbent material 4 added to alleviate the moisture may undergo a firing process when coated on the sealing substrate. However, outgassing is caused during the sintering process, which causes a problem in that the organic light emitting device is easily exposed to moisture because the adhesive force is dropped between the sealing material 3 and the substrates.

 In addition, a structure for sealing an organic light emitting device by applying and curing a frit to a glass substrate without a moisture absorbent material is disclosed in US Patent Publication No. 20040207314. According to this, since the melted frit is hardened to completely seal between the substrate and the encapsulation substrate, there is no need to use a moisture absorbent, and the organic light emitting device can be more effectively protected.

However, in the case of sealing using frit often, ultraviolet rays or lasers must be irradiated to melt and cure the frit, so that an organic layer of an adjacent organic light emitting element is deteriorated, or metal wiring located under the frit is damaged.

2A to 2C are diagrams showing heat transfer by laser or ultraviolet rays when the frit is a sealing material, and FIG. 2A is a plan view of an organic light emitting display panel, and 2b is a lower pad line 5 at a frit below the panel. 2C is a conceptual diagram illustrating heat transfer from the side frit to the organic light emitting device side of the panel.

According to this, heat generated by the laser irradiated to the frit 3 'on the pad line 5 is transferred to the pad line 5, thereby damaging the pad line 5, and the frit 3' on the side of the panel. Heat by the laser irradiated to the heat is transferred to the organic light emitting device (not shown) adjacent to the arrow direction to deteriorate the organic light emitting device.

The present invention has been made to solve the above problems, an object of the present invention is to easily discharge the heat generated by the ultraviolet rays or laser irradiation on the frit to the outside to prevent damage to the organic layer and the metal wiring organic light emitting The present invention provides a display device and a manufacturing method.

According to an aspect of the present invention, an organic light emitting display device includes a first substrate including an organic light emitting diode array and a metal layer spaced apart from the array to surround an outer portion of the substrate; A second substrate encapsulating the first substrate; And a frit extending partially overlapping with the metal layer inside the metal layer to seal and adhere the gap between the first substrate and the second substrate.

According to another aspect of the present invention, there is provided a method of manufacturing an organic light emitting display device, the method comprising: providing a first substrate including an organic light emitting device array and a metal layer spaced apart from the array to surround the substrate; Providing a second substrate baked and coated by frit paste so as to partially overlap with a region corresponding to the metal layer of the first substrate; Bonding the frit of the second substrate and the metal layer of the first substrate to partially overlap each other; And adhering the first substrate and the second substrate by irradiating a frit formed on the second substrate with a laser or infrared ray.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

3 is a plan view of an organic light emitting display device according to an exemplary embodiment of the present invention. The organic light emitting display device includes a deposition substrate 100, an encapsulation substrate 200, and a frit 150. For convenience of description below, the deposition substrate 100 refers to a substrate including an organic light emitting device, and the substrate substrate 101 is distinguished and described as a substrate to be a substrate on which an organic light emitting device is formed. .

The deposition substrate 100 is a plate including an array of organic light emitting diodes. The organic light emitting diode includes a first electrode, an organic layer, and a second electrode, and includes a pixel region 100a and a pixel region in which the organic light emitting diode array is located. And a non-pixel region 100b formed outside of 100a. Hereinafter, in the description of the present specification, the pixel region 100a is a region where a predetermined image is displayed due to light emitted from the organic light emitting element, and the non-pixel region 100b is not a pixel region 100a on the substrate 100. It means all areas.

The pixel area 100a includes a plurality of scan lines S1 to Sn arranged in a row direction, a plurality of data lines D1 to Dm arranged in a column direction, and a plurality of pixel power lines L. S1 to Sn, the data lines D1 to Dm, and the pixel power line L are connected to each pixel. In addition, a second power supply line 42 is formed on the entire surface of the pixel region.

In the non-pixel region 100b, the scan driver 20, the data driver 30, the first power supply line 41, and the like, and various pad lines connecting the pad unit 50 to the pad unit 50 (for example, the scan pad line Sp). ), A data pad line Dp, a first power pad line Vp1, and a second power pad line Vp2. In this case, the scan pad line Sp is a wire connecting the scan driver 20 and the pad unit 50, and the data pad line Dp is a wire connecting the data driver 30 and the pad unit 50. The first power pad wire Vp1 is a wire connecting the first power wire 41 and the pad part 50, and the second power pad wire Vp2 is the second power wire 42 and the pad part 50. ) Is a wiring to connect. In addition, although not shown, the non-pixel area may further include a data distribution unit for smoothly distributing data and an auxiliary power line for preventing voltage intensification.

In addition, in the non-pixel region 100b of the deposition substrate 100, a frit 150 used as a sealing material surrounding the pixel region 100a and a portion of the frit 150 overlapping the frit 150 to radiate heat to the outside. The metal layer 160 is formed outside the frit 150.

4 is a cross-sectional view of an organic light emitting display device according to an exemplary embodiment of the present invention. Hereinafter, referring to FIG. 4, the structure of the organic light emitting diode provided in the deposition substrate will be briefly described, and the arrangement of the frit and the metal layer will be described. However, in the present specification, an active driving type organic light emitting device using a top gate type driving transistor is described as an example, but is not limited thereto.

The buffer layer 111 is formed on the base substrate 101, and the buffer layer 111 is formed of an insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx). The buffer layer 111 is formed to prevent the substrate 100 from being damaged due to factors such as heat from the outside.

The semiconductor layer 112 including the active layer 112a and the ohmic contact layer 112b is formed on at least one region of the buffer layer 111. A gate insulating layer 113 is formed on the semiconductor layer 112 and the buffer layer 111, and a gate electrode 114 having a size corresponding to the width of the active layer 112a is formed on one region of the gate insulating layer 113. do.

An interlayer insulating layer 115 is formed on the gate insulating layer 113 including the gate electrode 114 and the interlayer insulating layer 115.

A pixel definition layer 120 including an opening (not shown) that exposes at least one region of the first electrode 119 is formed on the planarization layer 117 including the first electrode 119.

The organic layer 121 is formed on the opening of the pixel definition layer 120, and the second electrode layer 122 is formed on the pixel definition layer 120 including the organic layer 121. In this case, the second electrode layer 122 is formed. A passivation layer may be further formed on top.

The active matrix of the above-described organic light emitting device can be modified in various ways, and since each of the general structures is known, source and drain electrodes 116a and 116b are formed on a predetermined region.

The source and drain electrodes 116a and 116b are formed to be connected to the exposed regions of the ohmic contact layer 112b, respectively, and include a planarization layer (on the interlayer insulating layer 115 including the source and drain electrodes 116a and 116b). 117 is formed. In this case, a separate protective layer may be further provided between the interlayer insulating layer and the planarization layer.

On the region where the unit pixel of the planarization layer 117 is to be formed, a reflective film 140 reflecting light generated from the organic layer may be formed, and a first electrode 119 is patterned thereon, and the first electrode is formed. 119 is connected to the exposed one region of one of the source and drain electrodes 116a and 116b by the via hole 118. Detailed description will be omitted.

Meanwhile, among the layers formed on the substrate substrate 101, the stacked layers formed in the non-pixel region are the buffer layer 111, the gate insulating layer 113, and the interlayer insulating layer 115 formed on the entire surface of the substrate substrate. ), A protective layer (not shown), a planarization layer 117, and the like, some or all of which are stacked in a non-pixel region according to the process of these layers, and the surface layer in contact with the metal layer is also one of these layers.

Unlike the present embodiment, if the structure of the driving transistor is a bottom gate, the order of the layers to be formed may be changed, and according to the embodiment, a thermal barrier layer (eg, an inorganic layer) may be further formed to further block heat generated from the frit. Therefore, the present invention is not limited to the stacked structure or the surface layer of the non-pixel region below the region where the metal layer is to be formed.

On the other hand, there is also a section in which the metal wires are located between the above-described layers, that is, the pad lines or power lines on the substrate may be located under the metal layer to be formed outside the non-pixel region. In this embodiment, metal wirings are positioned between the interlayer insulating layer and the planarization layer, and these metal wirings are mainly formed simultaneously when forming the source and drain electrodes.

The metal layer 160 is formed along the periphery on the surface layer of the non-pixel region, and is formed outwardly while partially overlapping with a position where a frit to be described later is formed. That is, the frit 150 is formed to surround the outer portion of the pixel region, and the metal layer 160 is formed while partially overlapping the frit 150 and surrounding the outer portion again.

The metal layer 160 may be made of a material such as silver (Ag), aluminum (Al), or aluminum alloy, and the same material as the reflective film in the case of forming the reflective film 140 of the first electrode of the organic light emitting diode. Is preferably.

At this time, the width of the frit 150 overlaps with the metal layer 160 is preferably 10 to 30% of the total width of the frit. If it exceeds 30%, there is a problem that the adhesion between the TFT substrate and the encapsulation substrate is weak, and if it is less than 10%, the heat generated by the laser does not sufficiently escape.

The encapsulation substrate 200 is a member that encapsulates at least the pixel region 100a of the substrate on which the organic light emitting diode is formed, and is formed of a transparent material in the case of front emission. In the present invention, the material of the encapsulation substrate 200 is not limited, but in the present embodiment, for example, in the case of front emission, glass may be preferably used.

The frit 150 is formed between the encapsulation substrate 200 and the non-pixel region 100b of the deposition substrate 100 to seal the pixel region 100a to prevent outside air from penetrating. The frit 150 is formed to partially overlap the metal layer 160 formed on the deposition substrate as described above. This is for the metal layer 160 to discharge heat generated when the laser is irradiated to the frit 150 to the outside through the metal layer 160.

Frit means a glass raw material in the form of a powder inherently including an additive, but in the technical field of the glass, the frit may also mean a glass formed by melting the frit.

The frit 150 used in the present invention includes at least one of K 2 O, Fe 2 O 3, Sb 2 O 3, ZnO, P 2 O 5, V 2 O 5, TiO 2, Al 2 O 3, B 2 O 3, WO 3, SnO, and PbO, 200 is applied to the encapsulation substrate 200 and the deposition substrate 100 by melting with laser or infrared light and then curing the encapsulation substrate 200 and the deposition substrate 100.

In this case, the width formed by the frit 150 may be changed according to the size of the panel. For example, when the panel is about 2.2 inches, it may be used as 0.5 mm to 1.5 mm. If less than 0.5m may cause a lot of defects when sealing, may cause problems in the adhesive force, if more than 1.5mm because the dead space of the device (Dad Space) is large, because the product quality falls.

In addition, the frit 150 is generally configured so as not to overlap with the section where the metal wiring is formed in order not to transfer heat to the lower metal wiring by laser irradiation, but as in the present invention, the metal layer for heat dissipation is If provided, it is also possible to configure so that the metal wiring and the frit overlap.

5A to 5C are diagrams for explaining heat transfer by laser or ultraviolet rays when the frit is a sealing material, and FIG. 5A is a plan view of an organic light emitting display panel in which a metal layer is partially overlapped with the frit, and FIG. A conceptual diagram illustrating the transfer of heat from the lower frit to the lower pad line, and FIG. 5C is a conceptual diagram illustrating the transfer of heat from the side frit to the organic light emitting device side.

Accordingly, the metal layer 160 is formed in the outer region of the non-pixel region of the deposition substrate 100, and the frit 150 is formed in the inner region of the non-pixel region rather than the metal layer while partially overlapping the metal layer 160.

As a result, heat by the laser irradiated to the frit 150 on the pad line P is discharged to the outside by the metal layer 160 before being transferred to the pad part 190, and the frit 150 on the side of the panel. Heat transmitted by the laser irradiated at) is not transmitted to the organic light emitting device side but to the outside.

As a result, even when a laser or ultraviolet rays are applied to the frit 150 that seals the deposition substrate 100 and the encapsulation substrate 200, the heat transferred to the frit 150 is transferred to the metal layer 160 having good thermal conductivity. It will not be delivered to the bottom of the frit.

Hereinafter, an embodiment of a method of manufacturing an organic light emitting display device according to the present invention will be described. 6A through 6C are process diagrams illustrating a manufacturing process of an organic light emitting display device.

First, the frit 150 is applied along a line of the encapsulation substrate 200 in a line shape. The frit 150 partially overlaps the metal layer formed in the non-pixel region 100a of the substrate 100 to be described later. Is formed. The thickness of the frit 150 is preferably 10 μm to 20 μm, and when the thickness of the frit 150 is 20 μm or more, a large amount of energy is required to seal the frit 150 having a large amount during laser sealing. Therefore, for this purpose, the power of the laser must be increased or the scan speed must be lowered. This may cause thermal damage, and at the thickness of 10 μm or less, defects in the frit coating state may occur. The frit 150 is applied to the encapsulation substrate 200 in a frit paste state and then fired to be cured after the moisture or organic binder contained in the paste is removed (FIG. 6A).

Next, a deposition substrate 100 including a non-pixel region including a pixel region, a driver, and a metal wiring including an organic light-emitting device manufactured separately, is formed on the outside of the non-pixel region, and the pixel region is formed. Bonding the sealing substrate 200 on the included section. The step of forming the metal layer outside the non-pixel region is preferably performed simultaneously with the step of forming a reflective film under the anode of the organic light emitting element of the pixel region. This is because the reflective film of the second electrode can also be formed of the same metal material. (FIG. 6B)

Next, the frit 150 between the bonded substrate 100 and the encapsulation substrate 200 is irradiated with laser or infrared rays to melt the frit 150 between the substrate 100 and the encapsulation substrate 200. At this time, the wavelength of the irradiated laser or infrared light may be used, for example, 800 to 1200nm (preferably 810nm), the output is preferably 25 to 45 watts (watt), and the portion other than the frit is preferably masked. . The material of the mask may be a double film of copper or aluminum. Thereafter, the melted frit 150 is cured while adhering the substrate 100 to the encapsulation substrate 200 (FIG. 6C).

The above-described manufacturing method is a manufacturing method for manufacturing an organic light emitting display device per unit cell, but a plurality of cells are required to be manufactured at a time for actual commercialization, and thus a manufacturing method thereof is described with reference to FIGS. 7A to 7D. Explain.

First, the frit paste 350 is applied while forming a line at a point spaced apart from a corner of a portion to be formed by each encapsulation substrate on a ledger 400 to form a plurality of encapsulation substrates. The frit paste 350 includes a glass material, an absorber for absorbing a laser, a filler for reducing the coefficient of thermal expansion, an organic binder, and the like. After the frit paste is applied, the frit paste is baked at a temperature of about 300 ° C. to 500 ° C., and the organic binder or moisture is evaporated during the firing process (FIG. 7A).

Next, the frit 350 cures the encapsulation substrate ledger 400 which is cured with the deposition substrate ledger 300 separately prepared. In the deposition substrate ledger 300, the metal layer 330 is formed to the outside while partially overlapping a point corresponding to the point where the frit 350 of the encapsulation substrate ledger 400 is formed from the pixel region. In this case, when the organic light emitting device of the deposition substrate ledger 300 includes a metal reflective film under the anode electrode, the metal layer may be formed in the same manner when the reflective film is formed. In this case, there is an advantage that the metal layer can be formed on the deposition substrate through the deformation of the mask without providing a separate mask (FIG. 7B).

Next, the substrate frit 300 and the encapsulation substrate 400 are adhered to each other by irradiating a laser or infrared rays to the frit 350 formed between the bonded substrate master 300 and the encapsulation substrate 400. At this time, the wavelength of the laser or infrared light to be irradiated may use 800 to 1200nm (preferably 810nm), the output is preferably 25 to 45 watts (watt), it is preferable that the portion other than the frit is masked, The laser or infrared rays can be irradiated from the sealing substrate side, the substrate side, or both directions. In addition, it is preferable that the inside of the substrate and the encapsulation substrate are maintained at a pressure lower than atmospheric pressure in the bonded state (FIG. 7C).

Next, the plurality of substrate ledgers 300 and the encapsulated substrate ledger 400 in the bonded state are cut into individual display units, and at this time, the individual encapsulated substrates are encapsulated only in a predetermined region of the substrate. Only the substrate is cut separately (FIG. 7D).

Although the present invention has been described primarily with reference to the above embodiments, many other possible modifications and variations can be made without departing from the spirit and scope of the invention. For example, changing the type of drive transistor, changing the position of forming the frit, changing the width of the metal layer, and the like.

According to the organic light emitting display according to the present invention and a method of manufacturing the same, the organic light emitting device is deteriorated by releasing heat from the laser or ultraviolet rays irradiated by a metal layer in contact with a lower portion of the frit to the outside. It is effective to prevent or damage the metal to the lower metal wiring.

The scope of the above-described invention is defined in the following claims, not bound by the description in the specification body, all modifications and variations that fall within the equivalent scope of the claims will fall within the scope of the invention.

Claims (11)

A first substrate comprising an organic light emitting device array and a metal layer spaced apart from the array to surround the substrate; A second substrate encapsulating the first substrate; And And a frit extending partially overlapping with the metal layer inside the metal layer to seal and adhere between the first and second substrates. The method of claim 1, The metal layer is an organic light emitting display device, characterized in that one selected from the group consisting of silver (Ag), aluminum (Al), and aluminum alloy. The method of claim 1, The width of the frit overlapping the metal layer is 10 to 30% of the total width of the frit. The method of claim 1, The thickness of the frit is 10 to 20㎛, the thickness of the metal layer is an organic light emitting display device, characterized in that 1000 ~ 5000Å. The method of claim 1, The frit is K ₂ O, Fe ₂ O ₃ , Sb ₂ O ₃ , ZnO, P ₂ O ₅ , V ₂ O ₅ , TiO ₂ , Al ₂ O ₃ , B ₂ O ₃ , WO ₃ , SnO, and PbO An organic light emitting display device comprising at least one selected from the group consisting of or a mixture thereof. The method of claim 1, The first substrate may include at least one thin film transistor for driving the organic light emitting diode, and the lower portion of the metal layer may include at least an insulating substrate, an insulating substrate, a buffer layer, a gate insulating layer, an interlayer insulating layer, and a protective layer. An organic light emitting display device. The method of claim 1, The organic light emitting display device includes a transparent first electrode, a reflective layer, an organic thin film layer, and a second electrode to emit light toward the first electrode. In the method of manufacturing an organic light emitting display device, Providing a first substrate comprising an organic light emitting device array and a metal layer spaced apart from the array to surround the substrate; Providing a second substrate baked and coated by frit paste so as to partially overlap with a region corresponding to the metal layer of the first substrate; Bonding the frit of the second substrate and the metal layer of the first substrate to partially overlap each other; Adhering the first substrate and the second substrate by irradiating a frit formed on the second substrate with a laser or infrared light; and manufacturing the organic light emitting display device. The method of claim 8, And wherein the metal layer is formed of one selected from the group consisting of silver (Ag), aluminum (Al), and an aluminum alloy. The method of claim 8, And a metal layer is formed on the first substrate at the same time when the reflective film is formed on the first electrode of the organic light emitting diode. The method of claim 8, The firing temperature of the frit paste is 300 ℃ to 500 ℃ manufacturing method of an organic light emitting display device.

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