KR101365120B1 - Organic light emitting diode display - Google Patents

Abstract

An organic light emitting diode display according to an exemplary embodiment of the present invention may include a sealing member which is disposed between a first substrate and a second substrate, and a first substrate and a second substrate, which are disposed to face each other; A metal film formed between the first substrate and the sealing member.

Organic light emitting diode display, sealing, laser, wiring pattern

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an organic light-

The present invention relates to an organic light emitting display device, and more particularly, to an organic light emitting display device capable of improving the bonding degree of substrates by improving a sealing structure between the substrates.

Among various display panels applied to display devices, organic light emitting diode displays (OLEDs) are being used as display panels with better performance than other display panels due to rapidly developing semiconductor technology.

As is known, an active driving type organic light emitting display device arranges pixels, which are basic units of image expression, on a substrate in a matrix manner, and thin film transistors (TFTs) are disposed for each pixel to independently form pixels. By controlling, light is emitted from an organic light emitting diode (OLED) to display an image.

The organic light emitting diode display may include a light emitting area for displaying an image and a non-light emitting area formed outside the light emitting area, and wiring patterns extending from the light emitting area are positioned in the non-light emitting area. The wiring patterns are connected to a connection element, such as a flexible printed circuit board (FPCB), which electrically connects an external device and an organic light emitting display device by thermocompression bonding.

The organic light emitting diode display may have a structure in which an encapsulation substrate is sealed on a substrate on which the thin film transistor and the organic light emitting diode are formed. That is, in general, an organic light emitting display device applies a sealing material along the periphery of the substrate, mounts the encapsulation substrate thereon, and hardens the sealing material by irradiating a beam emitted from a light source such as a laser. The sealing substrate is bonded to each other.

At this time, since the wiring patterns should be disposed in the non-light emitting area for connection with the connection element, as described above, for this purpose, the wiring patterns are disposed on the substrate across the sealing member. In the arrangement relationship between the wiring patterns and the sealing member, since the wiring pattern is usually disposed below the sealing member, the wiring pattern reflects the laser beam when the sealing member is substantially cured by the laser.

Therefore, the degree of hardening of the portion of the sealing member with the wiring pattern at the bottom and the portion of the sealing member without the wiring pattern varies due to the difference in reflectance of the laser beam. For this reason, since a sealing member does not harden uniformly over the whole, the bonding of a board | substrate and an sealing board | substrate also does not become uniform.

An organic light emitting display device capable of uniformly bonding a substrate and an encapsulation substrate by uniformly curing the sealing member.

An organic light emitting diode display according to an exemplary embodiment of the present invention may include a sealing member which is disposed between a first substrate and a second substrate, and a first substrate and a second substrate, which are disposed to face each other; A metal film formed between the first substrate and the sealing member.

The metal film may be continuously formed along the edge of the first substrate.

An area of the metal film may be equal to or larger than an area of the sealing member.

A light emitting region and a non-light emitting region are formed on the first substrate, and the metal film may be formed of the same material as the organic light emitting element formed in the light emitting region.

The organic light emitting diode may be formed of the same material as the second electrode of the first electrode, the organic light emitting layer, and the second electrode sequentially formed on the first substrate.

A light emitting region may be formed on the first substrate, the light emitting region may extend from the light emitting region, and include a wiring pattern formed between the sealing member and the metal layer.

The metal film may be selected and formed of any one of Al, Mo, Ti, Ag, Mg, and an alloy including at least one of these metals.

In the organic light emitting diode display according to the exemplary embodiment of the present invention, when the sealing member is cured, a metal film capable of reflecting the laser beam is formed under the sealing member so that the laser beam may be uniformly reflected to the sealing member side. By this metal film, the hardening to the sealing member is made uniform and firm, whereby the substrates joined by the sealing member can be satisfactorily bonded.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. The present invention may be embodied in many different forms and is not limited to the embodiments described herein.

In order to clearly illustrate the present invention, parts not related to the description are omitted, and the same or similar components are denoted by the same reference numerals throughout the specification.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. When a portion of a layer, film, region, plate, or the like is said to be "on" or "on" another portion, this includes not only the case where the other portion is "directly above," but also when there is another portion in the middle. Conversely, when a part is "directly over" another part, it means that there is no other part in the middle.

In addition, when a part of the specification is said to be "connected" to another part, this includes not only "directly connected", but also "electrically connected" with another element in between. do. In addition, when a part is said to "include" a certain component, this means that it may further include other components, except to exclude other components unless otherwise stated.

1 is an exploded perspective view schematically illustrating an organic light emitting diode display 100 according to an exemplary embodiment of the present invention, and FIG. 2 is a combined perspective view showing a portion of the organic light emitting diode display 100 partially cut away.

1 and 2, the organic light emitting diode display 100 may include a first substrate (or substrate) 10, a second substrate (or encapsulation substrate) 20, a sealing member 30, and a metal film 40. Include.

The first substrate 10 may be made of an insulating material or a metal material. Glass or plastic may be used as the insulating material, and stainless steel (SUS) may be used as the metal material.

The first substrate 10 includes a light emitting area DA from which light is emitted and a non-light emitting area NDA positioned outside the light emitting area DA. When the organic light emitting diode display 100 has an active matrix (AM) structure, a plurality of organic light emitting elements L (shown in FIG. 4) and thin film transistors T, 4) are formed. In the non-emission area NDA, wiring patterns 50, such as a scan driver and a data driver, which extend in the emission area DA, are positioned. The wiring patterns 50 are electrically connected to a driving integrated circuit or a flexible circuit board prepared separately from the organic light emitting diode display 100.

The second substrate 20 is positioned to face the first substrate 10, and the first substrate 10 and the second substrate 20 are joined to each other by a sealing member 30 disposed along an edge thereof. The second substrate 20 may be made of transparent glass. However, the present invention is not limited thereto, and materials of the first substrate and the second substrate may be changed according to the light emission direction of the organic light emitting diode display.

The sealing member 30 may be formed in a band shape in the non-light emitting area NDA of the first substrate 10. As a result, the second substrate 20 seals the organic light emitting diodes formed on the first substrate 10.

The metal film 40 is formed on the first substrate 10 corresponding to the position of the sealing member 30. That is, the metal film 40 is formed to overlap the sealing member 30 between the first substrate 10 and the sealing member 30, and is formed as one sealing member 30 along the edge of the first substrate 10. It is formed into a band shape. In addition, the metal film 40 is formed above the wiring patterns 50 disposed on the non-light emitting area NDA. At this time, the metal film 40 may be formed to have a larger width than the sealing member 30, as shown in the enlarged circle of FIG.

3A schematically illustrates a cross section taken along line III-III of FIG. 1, and FIG. 3B illustrates a state in which the first substrate 10 and the second substrate 20 are bonded to each other in FIG. 3A.

Referring to FIG. 3A, a plurality of wiring patterns 50 are formed in the non-light emitting area NDA on the first substrate 10, and a metal film 40 is formed thereon. At this time, a passivation film 170 for electrical insulation is formed between the wiring patterns 50 and the metal film 40. This passivation film 170 is described in more detail later. The sealing member 30 is coated and formed along the outer side of the second substrate 20. In this structure, during the assembly process of the first substrate 10 and the second substrate 20, the first substrate 10 and the second substrate 20 are aligned and prefabricated, wherein the metal film 40 is In contact with the sealing member 30.

Subsequently, referring to FIG. 3B, a laser beam is irradiated toward the sealing member 30 from the outside of the second substrate 20, thereby curing the sealing member 30 while the first substrate 10 and the second substrate ( 20) are combined. Here, the hardening source for the sealing member 30 is not limited only to a laser.

When the laser beam is irradiated to the sealing member 30, the metal film 40 reflects the laser beam in the direction of the arrow. Accordingly, the sealing member 30 is primarily cured by the laser beam irradiated to the sealing member 30, and the sealing member 30 is formed by the laser beam reflected through the metal film 40 toward the second substrate 20. Curing is secondary. Accordingly, the sealing member 30 can be hardened more firmly.

In this embodiment, the metal film 40 is formed to have a larger area than the sealing member 30. This structure can improve the reflectance of the metal film 40 with respect to the laser beam, and can further strengthen the secondary curing of the sealing member 30 described above. Of course, the area relationship between the metal film 40 and the sealing member 30 is not limited to the above conditions. On the other hand, the metal film 40 and the sealing member 30 may have the same hardened shape and the same size and may have the same area.

Further, in the present embodiment, the metal film 40 is formed over the entirety of the sealing member 30, regardless of whether or not the wiring pattern 50 is disposed below the sealing member 30, so that When irradiated, it reflects this, so that uniform curing of the entire portion of the sealing member 30 can be achieved.

The metal film 40 may include a metal having a high reflectance, for example, a metal selected from Al, Mo, Ti, Ag, and Mg or an alloy including at least one of these metals in order to efficiently reflect the laser beam. Can be. In addition, the metal film 40 may be formed of a material selected from a material forming an electrode or a wiring pattern 50 formed in the emission area DA of the first substrate 10.

Hereinafter, a case in which one electrode is selected from the electrodes formed in the emission area DA to form the metal film 40 using the same material will be described as an example.

4 is an enlarged view of a part of the cross section taken along the line IV-IV of FIG. 1.

Referring to FIG. 4, a buffer layer 110 is formed on a first substrate 10 including a light emitting area DA and a non-light emitting area NDA. The buffer layer 110 prevents impurities of the first substrate 10 from being diffused when the active layer 120 is formed. The buffer layer 110 may be formed of, for example, a silicon nitride layer or a layer in which silicon nitride and silicon oxide are stacked.

The active layer 120 is formed in the emission area DA on the first substrate 10. Here, the active layer 120 includes a source region 121 and a drain region 123 and a channel region 122 connecting them.

The gate insulating layer 130 is formed on the buffer layer 110 in the light emitting area DA and the non-light emitting area NDA while covering the active layer 120. A first contact hole 1301 is formed in a portion of the gate insulating layer 130.

The gate electrode 140 is formed in the emission area DA with the gate insulating layer 130 interposed over the active layer 120. Here, the gate electrode 140 may be made of any one selected from a metal, for example, MoW, Al, Cr, and Al / Cr.

An interlayer insulating layer 150 is formed on the gate insulating layer 130 of the emission area DA and the non-emitting area NDA while covering the gate electrode 140. A portion of the interlayer insulating layer 150 of the emission area DA is etched to constitute the second contact hole 1501.

The source electrode 161 and the drain electrode 162 are formed on the interlayer insulating layer 150 of the emission area DA, and the source electrode 161 and the drain electrode 162 are formed of the first contact hole 1301 and the second. The source region 121 and the drain region 123 exposed through the contact hole 1501 are electrically connected to each other. The source electrode 161 and the drain electrode 162 may be made of metal, for example, Ti / Al or Ti / Al / Ti. As a result, the thin film transistor T including the active layer 120, the source electrode 161, the drain electrode 162, and the gate electrode 140 is formed. A wiring pattern 50 made of the same material as the source electrode 161 and the drain electrode 162 is formed on the interlayer insulating layer 150 of the non-light emitting region NDA.

The passivation film 170 is formed while covering the thin film transistor T of the light emitting area DA and the wiring pattern 50 of the non-light emitting area NDA, and the planarization film is formed on the passivation film 170 of the light emitting area DA. 180 is formed. Here, the first via hole 1701 and the second via hole 1801 exposing a part of the drain electrode 162 are formed in the passivation film 170 and the planarization film 180 of the emission area DA.

Subsequently, the first pixel electrode 190, the organic emission layer 210, and the second pixel electrode 220 are sequentially formed on the planarization layer 180 of the emission area DA.

The first pixel electrode 190 is electrically connected to the drain electrode 162 of the thin film transistor T through the first via hole 1701 and the second via hole 1801. In addition, the first pixel electrode 190 is electrically separated from the first pixel electrode (not shown) of the adjacent pixel by the pixel defining layer 200. The organic emission layer 210 is formed on the first pixel electrode 190 through the opening 2001 formed in the pixel defining layer 200. The second pixel electrode 220 is formed on the organic emission layer 210 while covering the entire surface of the emission area DA. As a result, the organic light emitting diode L including the first pixel electrode 190, the organic emission layer 210, and the second pixel electrode 220 are sequentially formed.

Here, when the second pixel electrode 210 is formed in the emission area DA, the metal film 40 formed of the same material as the second pixel electrode 210 on the passivation film 170 of the non-emission area NDA. Is formed. In this case, the metal film 40 and the second pixel electrode 210 may be electrically insulated to protect the light emitting area DA from a factor that interferes with an external electrical signal.

Although the preferred embodiments of the present invention have been described above, the present invention is not limited thereto, and various modifications and changes can be made within the scope of the claims and the detailed description of the invention and the accompanying drawings. Naturally, it belongs to the range of.

1 is an exploded perspective view of an OLED display according to an embodiment of the present invention.

FIG. 2 is a combined perspective view illustrating a partially cut-out of the organic light emitting diode display of FIG. 1.

3A is a partial cross-sectional view taken along line III-III of FIG. 1.

3B is a cross-sectional view illustrating a state in which the first substrate and the second substrate of FIG. 3A are bonded together.

4 is a partially enlarged cross-sectional view taken along line IV-IV of FIG. 1.

DESCRIPTION OF THE REFERENCE NUMERALS to main parts of the drawings

100; An organic light emitting display device 10; First substrate 20; The second substrate

30; Sealing member 40; A metal film 50; Wiring pattern

Claims (7)

A first substrate and a second substrate disposed to face each other; A sealing member disposed between the first substrate and the second substrate to bond the first substrate and the second substrate; And A metal film formed between the first substrate and the sealing member / RTI > The area of the metal film is equal to or larger than the area of the sealing member, and the metal film overlaps with the sealing member to form a strip with the sealing member. The method of claim 1, And the metal layer is formed continuously along the edge of the first substrate. delete The method of claim 1, A light emitting area and a non-light emitting area are formed on the first substrate, and the metal film is formed of the same material as the organic light emitting element formed in the light emitting area. 5. The method of claim 4, The organic light emitting diode display includes: a first electrode, an organic light emitting layer, and a second electrode sequentially formed on the first substrate, and the metal film is formed of the same material as the second electrode. The method of claim 1, And an interconnection pattern formed on the first substrate, the emission pattern extending from the emission region, and a wiring pattern formed between the sealing member and the metal layer. The method of claim 1, The metal layer is selected from any one of Al, Mo, Ti, Ag, Mg, and an alloy containing at least one of these metals.

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