KR100698688B1 - Organic light emitting display device and method of manufacturing the same - Google Patents

Abstract

An organic light emitting display device and a manufacturing method thereof are provided to maintain an electrical property and reliability of the OLED by preventing an electric line from being split due to a thermal stress. An organic light emitting display device includes a substrate(200) having a pixel region(210) and a non-pixel region(220). Plural OLED(Organic Light Emitting Devices)(100) are formed between scan and data lines(104b,106c). Pads(104c,106d) receive signals from the outside. A scan driver(410) and a data driver(420) supply signals to the scan and data lines. A protective film is formed between a metal line and a frit. The protective film is made of a first electrode material. The protective film is isolated from the first electrode.

Description

Organic light emitting display device and method of manufacturing the same {Organic light emitting display device and method of manufacturing the same}

1 is a photograph for explaining the damage of metal wiring by laser irradiation.

2A, 3A, and 4 are plan views illustrating an organic light emitting display device according to an exemplary embodiment of the present invention.

2B and 3B are cross-sectional views for explaining FIGS. 2A and 3A.

5A to 5G and 7 are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to an embodiment of the present invention.

6A and 6B are plan views illustrating FIGS. 5A and 5E.

8A and 8B are enlarged cross-sectional views and a plan view of the portion A shown in FIG. 7.

<Explanation of symbols for the main parts of the drawings>

10: metal wiring 20: frit

100: organic light emitting device 101: buffer layer

102 semiconductor layer 103 gate insulating film

104a: gate electrode 104b: scan line

104c and 106d: Pad 105: Interlayer Insulating Film

106a and 106b: source and drain electrodes

106c: data line 107: planarization layer

108a: anode electrode 108b: protective film

109: pixel defining layer 110: organic thin film layer

111: cathode electrode 200: substrate

210: pixel area 220: non-pixel area

300: encapsulation substrate 320: frit

410: scan driver 420: data driver

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display device and a manufacturing method thereof, and more particularly, to an organic light emitting display device sealed with a frit and a manufacturing method thereof.

In general, an organic light emitting display device includes a substrate providing a pixel region and a non-pixel region, and a container or a substrate disposed to face the substrate for encapsulation and bonded to the substrate by a sealant such as epoxy. do.

In the pixel area of the substrate, a plurality of light emitting devices are formed in a matrix manner between a scan line and a data line, and the light emitting devices include an anode electrode, a cathode electrode, and an anode electrode. And an organic thin film layer formed between the cathode electrode and including a hole transport layer, an organic light emitting layer, and an electron transport layer.

However, the light emitting device configured as described above is vulnerable to oxygen because it contains organic matter, and since the cathode electrode is formed of a metal material, the light emitting device is easily oxidized by moisture in the air, thereby deteriorating electrical characteristics and light emission characteristics. Therefore, in order to prevent this, the moisture that penetrates from the outside by mounting a moisture absorbent in the form of powder or by adhering it in the form of a film to a container made of a metal can or cup or a substrate such as glass or plastic To be removed.

However, the method of mounting the moisture absorbent in the form of a powder is complicated in the process, the material and the cost of the process is increased, the thickness of the display device is increased and it is difficult to apply to the front emission. In addition, the method of adhering the moisture absorbent in the form of a film has a limitation in removing moisture and is difficult to apply to mass production because of its durability and reliability.

Therefore, in order to solve such a problem, a method of sealing side of the light emitting device by forming sidewalls with frits has been used.

International Patent Application No. PCT / KR2002 / 000994 (May 24, 2002) describes an encapsulation container having a sidewall formed of glass frit and a manufacturing method thereof.

US patent application Ser. No. 10 / 414,794 (April 16, 2003) describes a glass package sealed by bonding the first and second glass plates with a frit and a method of manufacturing the same.

Korean Patent Laid-Open No. 2001-0084380 (2001.9.6) describes a frit frame sealing method using a laser.

Korean Patent Laid-Open Publication No. 2002-0051153 (2002.6.28) describes a packaging method of sealing an upper substrate and a lower substrate with a frit layer using a laser.

An object of the present invention is to provide an organic light emitting display device and a method of manufacturing the organic light emitting display device, which prevents damage of metal wires caused by heat by preventing the metal wires under the frit and the portions crossing the frit from being directly exposed to heat by the laser. There is this.

In accordance with an aspect of the present invention, an organic light emitting display device includes: a pixel region in which an organic light emitting diode including a first electrode, an organic thin film layer, and a second electrode is formed, and a signal provided from the outside; A first substrate including a non-pixel region having a metal wiring for transferring to an electroluminescent device, a second substrate disposed on the first substrate, a frit provided between the first substrate and the second substrate, the metal The first electrode material is formed between the wiring and the frit, and includes a protective film separated from the first electrode, and the first substrate and the second substrate are bonded by the frit.

An organic light emitting display device according to another aspect of the present invention for achieving the above object is connected to the organic electroluminescent element consisting of a first electrode, an organic thin film layer and a second electrode and the first electrode, the source, drain and gate A first substrate including a pixel region in which a transistor including a transistor is formed, and a non-pixel region in which metal wirings for transmitting a signal provided from the outside to the organic light emitting diode are formed, and a second substrate disposed on the first substrate. And a frit provided between the first substrate and the second substrate, a protective layer formed of the first electrode material between the metal wire and the frit, and separated from the first electrode. The first substrate and the second substrate are bonded.

According to still another aspect of the present invention, there is provided a method of manufacturing an organic light emitting display device, including forming a buffer layer on a first substrate in a pixel area and a non-pixel area, and forming a buffer layer on the buffer layer in the pixel area. Forming a gate insulating film on the entire upper surface of the pixel region and the non-pixel region after forming a semiconductor layer in the semiconductor substrate, forming a gate electrode and a first metal wiring on the gate insulating layer of the pixel region, and forming the non-pixel region Forming a first metal wire and a pad extending from the first metal wire of the pixel region on the gate insulating film of the semiconductor layer, forming an interlayer insulating film on the entire upper surface of the pixel region and the non-pixel region, and then Forming a contact hole so that a predetermined portion is exposed; the half through the contact hole on the interlayer insulating layer of the pixel region Forming a second metal interconnection with source and drain electrodes connected to the body layer, and forming a second metal interconnection and a pad extending from the second metal interconnection of the pixel region on the interlayer insulating layer of the non-pixel region; Forming a via hole to expose the source or drain electrode after forming a planarization layer on the entire upper surface of the pixel region, forming an inorganic electrode layer on the entire upper surface of the pixel region and the non-pixel region, and then patterning the pixel Forming a first electrode connected to the source or drain electrode through the via hole, and forming a protective film in the non-pixel region; forming an organic thin film layer and a second electrode on the first electrode to form an organic field Forming a light emitting device, preparing a second substrate having a frit along a periphery thereof, and forming a light emitting device on the first substrate After placing in the second substrate comprises the step of bonding the first substrate to the frit.

In the case of using the method of sealing the light emitting device with a frit, the frit-coated substrate is bonded to the substrate on which the light emitting device is formed, and then irradiated with a laser to melt the frit and adhere to the substrate. As shown in the drawing, the metal wire 10 of the lower portion of the frit 20 and the portion (part A) intersecting with the frit 20 is directly exposed to heat by a laser, thereby causing heat damage. As described above, the metal wires damaged by heat deteriorate the electrical characteristics and reliability of the device because cracking occurs or self-resistance values and electrical characteristics change.

The present invention is to provide an organic light emitting display device and a method of manufacturing the same that can solve the above problems.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided to those skilled in the art to fully understand the present invention, and may be modified in various forms, and the scope of the present invention is limited to the embodiments described below. no.

2A, 3A, and 4 are plan views illustrating an organic light emitting display device according to an exemplary embodiment of the present invention, and FIGS. 2B and 3B are cross-sectional views illustrating FIGS. 2A and 3A.

Referring to FIG. 2A, the substrate 200 includes a pixel region 210 and a non-pixel region 220. In this case, the non-pixel area 220 may be an area surrounding the pixel area 210 or a peripheral area of the pixel area 210. In the substrate 200 of the pixel region 210, a plurality of organic light emitting diodes 100 connected in a matrix manner are formed between the scan line 104b and the data line 106c, and the substrate of the non-pixel region 220 ( The power supply line 200 for the operation of the scan line 104b and the data line 106c and the organic light emitting diode 100 extending from the scan line 104b and the data line 106c of the pixel region 210 may be provided. (Not shown) and a scan driver 410 and a data driver 420 which process signals supplied from the outside through the pads 104c and 106d and supply them to the scan line 104b and the data line 106c.

Referring to FIG. 2B, the organic light emitting diode 100 includes an anode electrode 108a and a cathode electrode 111, and an organic thin film layer 110 formed between the anode electrode 108a and the cathode electrode 111. The organic thin film layer 110 may have a structure in which a hole transport layer, an organic light emitting layer, and an electron transport layer are stacked, and further include a hole injection layer and an electron injection layer.

In the case of the passive matrix method, the organic light emitting device 100 configured as described above is connected between the scan line 104b and the data line 106c in a matrix manner, and in the case of an active matrix method, the scan is performed. The organic electroluminescent device 100 is connected in a matrix manner between the line 104b and the data line 106c, and a thin film transistor (TFT) and a signal for controlling the operation of the organic light emitting device 100 are provided. Capacitors are further included to maintain. The thin film transistor includes a source, a drain, and a gate. In the drawing, the semiconductor layer 102 provides source and drain regions and channel regions, and source and drain electrodes 106a and 106b are connected to the source and drain regions, and the semiconductor layer 102 is formed on the upper portion of the channel region by the gate insulating layer 103. A gate electrode 104a is formed that is electrically insulated from the layer 102.

3A and 3B, the frit 320 is formed on the encapsulation substrate 300 along the periphery. The frit 320 seals the pixel region 210 to prevent oxygen or moisture from penetrating, and is formed to surround a portion of the non-pixel region 220 including the pixel region 210. A material that can be melted by, for example, at least one kind of transition metal can be formed into doped glass frit.

Referring to FIG. 4, an encapsulation substrate 300 is disposed on the substrate 200. The encapsulation substrate 300 is disposed on the substrate 200 so as to overlap a portion of the pixel region 210 and the non-pixel region 220, and the scan line 104b and the data line 106c formed in the non-pixel region 220. And a protective film 108b made of an inorganic electrode material such as an anode electrode 108a and separated from the anode electrode 108a between the power supply line and the frit 320. The anode electrode 108a and the protective layer 108b may be formed of an opaque inorganic electrode material in the case of the top emission method, and may be formed of a transparent inorganic electrode material in the case of the bottom emission method. Opaque inorganic electrode materials include, for example, inorganic or mixtures of inorganic materials selected from the group consisting of ACX (Al alloys), Ag, Au, and transparent inorganic electrode materials include inorganic materials selected from the group consisting of ITO, IZO, ITZO. Or a mixture of minerals.

As described above, the encapsulation substrate 300 is bonded onto the substrate 200 to irradiate a laser or infrared light so that the frit 320 is melted and adhered to the substrate 200.

Next, a method of manufacturing the organic light emitting display device according to the exemplary embodiment of the present invention configured as described above will be described with reference to FIGS. 5A to 5G and 6A and 6B.

Referring to FIGS. 5A and 6A, first, a substrate 200 in which a pixel region 210 and a non-pixel region 220 are defined is prepared. The non-pixel area 220 may be defined as an area surrounding the pixel area 210 or a peripheral area of the pixel area 210.

The buffer layer 101 is formed on the substrate 200 of the pixel region 210 and the non-pixel region 220. Buffer layer 101 is for preventing the damage of the board 200 by heat and prevents the ions diffuse outward from the substrate 200, an insulating film such as silicon oxide (SiO ₂₎ or silicon nitride (SiNx) Form.

Referring to FIG. 5B, after forming the semiconductor layer 102 providing an active layer on the buffer layer 101 of the pixel region 210, the pixel region 210 and the non-pixel region 220 including the semiconductor layer 102 are formed. Gate insulating film 103 is formed on the entire upper surface of the &quot; The semiconductor layer 102 provides source and drain regions and channel regions of the thin film transistor.

Referring to FIG. 5C, the gate electrode 104a is formed on the gate insulating layer 103 on the semiconductor layer 102. In this case, a scan line 104b connected to the gate electrode 104a is formed in the pixel region 210, and a scan line 104b extends from the scan line 104b of the pixel region 210 in the non-pixel region 220. And a pad 104c for receiving a signal from the outside. The gate electrode 104a, the scan line 104b and the pad 104c are formed of a metal such as molybdenum (Mo), tungsten (W), titanium (Ti), aluminum (Al), or an alloy or laminated structure of these metals. do. The non-pixel region 220 of FIG. 5C is a cross section of the portion where the scan line 104b is formed.

Referring to FIG. 5D, an interlayer insulating layer 105 is formed on the entire upper surface of the pixel region 210 including the gate electrode 104a and the non-pixel region 220. The interlayer insulating layer 105 and the gate insulating layer 103 are patterned to form contact holes to expose a predetermined portion of the semiconductor layer 102, and the source and drain electrodes 106a to be connected to the semiconductor layer 102 through the contact holes. And 106b). In this case, a data line 106c is formed in the pixel region 210 to be connected to the source and drain electrodes 106a and 106b, and a non-pixel region 220 extends from the data line 106c of the pixel region 210. The data line 106c and a pad 106d for receiving a signal from the outside are formed. The source and drain electrodes 106a and 106b, the data line 106c and the pad 106d may be formed of metals such as molybdenum (Mo), tungsten (W), titanium (Ti), aluminum (Al), or alloys of these metals. It is formed in a laminated structure. The non-pixel region 220 of FIG. 5D is a cross section of the portion where the data line 106c is formed.

5E, 5F, and 6B, the planarization layer 107 is formed on the entire upper surface of the pixel region 210 to planarize the surface. The planarization layer 107 of the pixel area 210 is patterned to form a via hole so that a predetermined portion of the source or drain electrode 106a or 106b is exposed. Thereafter, an electrode material layer made of an inorganic material is formed on the entire upper surface of the pixel region 210 and the non-pixel region 220, and then connected to the source or drain electrode 106a or 106b through the via hole in the pixel region 210. The anode electrode 108a is formed and the passivation layer 108b is formed in the non-pixel region 220. At this time, the anode electrode 108a and the passivation layer 108b are patterned so as to maintain electrical insulation between the scan line 104b and the data line 106c and the anode electrode 108a. The non-pixel region 220 of FIG. 5E is a cross section of the portion where the scan line 104b is formed, and the non-pixel region 220 of FIG. 5F is a cross section of the portion where the data line 106c is formed.

The electrode material layer made of an inorganic material may be formed of an opaque inorganic material or a mixture of inorganic materials in the case of the top emission method, and may be formed of a transparent inorganic material or a mixture of inorganic materials in the case of the bottom emission method. The opaque mineral or mixture of minerals can be selected from the group consisting of ACX (Al alloy), Ag, Au, for example, and the transparent mineral or mixture of minerals can be selected from the group consisting of ITO, IZO, ITZO. .

In this case, the planarization layer 107 is formed on the entire upper surface of the pixel region 210 and the non-pixel region 220, and the planarization layer 107 is planarized to expose the pad 106d connected to the data line 106c of the non-pixel region 220. Although the layer 107 may be patterned, the planarization layer 107 may be formed only in the pixel region 210 because adhesion with the data line 106c may be poor when the planarization layer 107 is formed of an organic material.

Referring to FIG. 5G, the pixel defining layer 109 is formed on the planarization layer 107 so that a portion of the anode electrode 108a is exposed, and then the organic thin film layer 110 is formed on the exposed anode electrode 108a. The cathode electrode 111 is formed on the pixel defining layer 109 including the organic thin film layer 110.

In the above embodiment, the scan line 104b, the data line 106c and the power supply line of the non-pixel region 220 are not exposed by the passivation layer 108b made of an inorganic material. Although the protective film 108b is formed on the entire surface of the non-pixel region 220 including the scan line 104b, the data line 106c, and the power supply line, the scan line 104b of the non-pixel region 220 is provided. ), The protective film 108b may be formed only on the data line 106c and the power supply line.

Referring again to FIGS. 2A and 2B, an encapsulation substrate 300 having a size overlapping with a portion of the pixel region 210 and the non-pixel region 220 is prepared. As the encapsulation substrate 300, a substrate made of a transparent material such as glass may be used, and a substrate made of silicon oxide (SiO ₂ ) is preferably used.

The frit 320 is formed along the periphery of the encapsulation substrate 300. The frit 320 seals the pixel region 210 to prevent infiltration of oxygen or moisture, and is formed to surround a portion of the non-pixel region 220 including the pixel region 210. The frit generally refers to a powdery glass raw material, but in the present invention, a frit in a paste state including a laser or an infrared absorber, an organic binder, a filler to reduce the coefficient of thermal expansion, and the like is hardened through a firing process. It may mean. For example, the frit may be doped with at least one kind of transition metal.

Referring to FIG. 7, the encapsulation substrate 300 is disposed on an upper portion of the substrate 200 manufactured through the process illustrated in FIGS. 5A to 5G. The frit 320 is irradiated with a laser or infrared rays along the frit 320 in a state where the encapsulation substrate 300 is disposed on the substrate 200 so as to overlap a portion of the pixel region 210 and the non-pixel region 220. The substrate 200 is bonded to the substrate 200. As the laser or infrared rays are absorbed by the frit 320 to generate heat, the frit 320 melts and adheres to the substrate 200.

In the case of a laser irradiation with a power of about 36 to 38W, it moves at a constant speed along the frit 320 to maintain a constant melting temperature and adhesion. The moving speed of the laser or infrared ray is set to about 10 to 30 mm / sec, preferably about 20 mm / sec.

Meanwhile, in the present exemplary embodiment, the gate insulating layer 103 and the interlayer insulating layer 105 are formed in the pixel region 210 and the non-pixel region 220. However, the gate insulating layer 103 and the interlayer insulating layer 105 may be formed only in the pixel region 210. Although the case in which the frit 320 is formed to seal only the pixel region 210 has been described, the frit 320 may be formed to include the scan driver 410 without being limited thereto. In this case, the size of the encapsulation substrate 300 should also be changed. In addition, the case in which the frit 320 is formed on the encapsulation substrate 300 has been described. However, the frit 320 may be formed on the substrate 200.

As described above, the organic light emitting display device according to the present invention supplies the scan line 104b, the data line 106c, and the power supply of the non-pixel region 220 in the process of forming the anode electrode 108a of the pixel region 210. A protective film 108b made of an inorganic electrode material is formed on the metal wire such as a line. Therefore, when the laser is irradiated to melt the frit 320 and adhere it to the substrate 200, the scanning line 104b of the lower portion of the frit 320 and the portion crossing the frit 320 as shown in FIGS. 8A and 8B. ), Metal lines such as data line 106c, power supply line, etc. are not directly exposed to heat by the laser.

In general, metals used as electrodes or wirings exhibit reflectances of Cr (0.632), Mo (0.550), Ti (0.557), and W (0.500) in the infrared (IR) wavelength band of 800 nm, but are used in the present invention. Opaque inorganic electrode materials are relatively high reflectivity such as Al (0.868), Ag (0.969), Au (0.986). Therefore, due to the high reflectance, the heat absorption is low, the heat transfer to the lower metal wiring can be reduced.

In addition, the transparent inorganic electrode materials used in the present invention (ITO, IZO, ITZO, etc.) is a metal oxide, because the thermal conductivity is very low compared to the metal material serves to block the heat transferred to the lower metal wiring, Since it also serves as a buffer layer, it is possible to prevent damage of metal wiring by heat.

Therefore, the transfer of heat is blocked by the protective film 108b to prevent damage to the metal wiring due to heat, thereby preventing cracking of the metal wiring, change in self-resistance value, and electrical characteristics, thereby maintaining electrical characteristics and reliability of the device. Can be.

As described above, the preferred embodiment of the present invention has been disclosed through the detailed description and the drawings. The terms are used only for the purpose of describing the present invention and are not used to limit the scope of the present invention as defined in the meaning or claims. Therefore, those skilled in the art will understand that various modifications and equivalent other embodiments are possible from this. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

As described above, in the process of forming the anode, a protective film made of an inorganic material is formed on an upper portion of a metal wiring such as a scan line, a data line, a power supply line, and the like of a non-pixel region. The metal film at the lower part of the frit and the portion intersecting the frit is not directly exposed to the heat by the laser or infrared rays by the protective film, and the heat transfer is blocked, so that the damage of the metal wire by the heat does not occur. Therefore, cracking of the metal wires or changes in self-resistance values and electrical characteristics can be prevented, thereby maintaining electrical characteristics and reliability of the device.

In addition, the present invention provides a substrate having a better adhesion than the case where the frit is directly bonded to the metal wiring by forming a protective film with an inorganic material having excellent adhesion to the frit on the metal wiring in the non-pixel region without adding a separate process step or mask. Adhesion can be achieved. As a result, adhesion between the frit and the substrate is improved, and penetration of oxygen or moisture is effectively prevented, thereby improving reliability of the display device.

Claims (22)

An organic electroluminescent device comprising a first electrode, an organic thin film layer and a second electrode, and a first substrate having metal wirings for transmitting signals to the organic electroluminescent device, A second substrate disposed on the first substrate, A frit provided between the first substrate and the second substrate, An organic light emitting display device formed of the first electrode material between the metal line and the frit and including a passivation layer separated from the first electrode. The organic light emitting display device of claim 1, wherein at least one of the first substrate and the second substrate is made of a transparent material. The organic light emitting display device of claim 1, wherein the metal line comprises a scan line, a data line, and a power supply line. The organic light emitting display device of claim 1, wherein the passivation layer is formed in a region other than a region in which the organic light emitting element is formed. The organic light emitting display device of claim 1, wherein the first electrode material is at least one selected from the group consisting of ACX, Ag, and Au. The organic light emitting display device of claim 1, wherein the first electrode material is at least one selected from the group consisting of ITO, IZO, and ITZO. The organic light emitting display device of claim 1, wherein the frit is melted by laser or infrared light and adhered to the substrate. The organic light emitting display device of claim 1, wherein the frit includes at least one transition metal dopant. An organic electroluminescent device comprising a first electrode, an organic thin film layer, and a second electrode, a transistor for controlling the operation of the organic electroluminescent device, and a first substrate having metal wiring for transmitting signals to the organic electroluminescent device; A second substrate disposed on the first substrate, A frit provided between the first substrate and the second substrate, An organic light emitting display device formed of the first electrode material between the metal line and the frit and including a passivation layer separated from the first electrode. The organic light emitting display device of claim 9, wherein at least one of the first substrate and the second substrate is made of a transparent material. The organic light emitting display device of claim 9, wherein the metal line comprises a scan line, a data line, and a power supply line. The organic light emitting display device of claim 9, wherein the passivation layer is formed in a region other than a region in which the organic light emitting element is formed. The organic light emitting display device of claim 9, wherein the first electrode material is at least one selected from the group consisting of ACX, Ag, and Au. The organic light emitting display device of claim 9, wherein the first electrode material is at least one selected from the group consisting of ITO, IZO, and ITZO. The organic light emitting display device of claim 9, wherein the frit is melted by laser or infrared light and adhered to the substrate. The organic light emitting display device of claim 9, wherein the frit includes at least one transition metal dopant. Forming a buffer layer on the first substrate including the pixel region and the non-pixel region, After forming a semiconductor layer on the buffer layer of the pixel region, forming a gate insulating layer on the entire upper surface of the pixel region and the non-pixel region; Forming a gate electrode and a first metal wiring on the gate insulating film of the pixel region, and forming a first metal wiring extending from the first metal wiring of the pixel region on the gate insulating film of the non-pixel region; Forming an interlayer insulating film on the entire upper surface of the pixel region and the non-pixel region, and then forming a contact hole so that a predetermined portion of the semiconductor layer is exposed; Source and drain electrodes connected to the semiconductor layer through the contact hole and a second metal line are formed on the interlayer insulating layer of the pixel region, and a second metal of the pixel region is formed on the interlayer insulating layer of the non-pixel region. Forming a second metal wiring extending from the wiring, Forming a via hole to expose the source or drain electrode after forming a planarization layer on the entire upper surface of the pixel region; The inorganic electrode layer is formed on the entire upper surface of the pixel area and the non-pixel area, and then patterned to form a first electrode connected to the source or drain electrode through the via hole in the pixel area, and a protective layer is formed on the non-pixel area. To be formed, Forming an organic thin film layer and a second electrode on the first electrode, Forming a frit along the periphery of the second substrate, And arranging the second substrate on the first substrate and then adhering the frit to the first substrate. The method of claim 17, wherein the inorganic electrode layer is patterned to separate the first electrode and the passivation layer. The method of claim 17, wherein the inorganic electrode layer is formed of one or more selected from the group consisting of ACX, Ag, and Au. The method of claim 17, wherein the inorganic electrode layer is formed of one or more selected from the group consisting of ITO, IZO, and ITZO. The method of claim 17, wherein the frit is melted by laser or infrared light and adhered to the substrate. The method of claim 17, wherein the frit includes at least one transition metal dopant.

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