KR100710278B1 - Unification Type Cleaning and Etch/ Strip Apparatus - Google Patents

Abstract

The present invention relates to an etch / strip device in which the etch, strip and cleaning device are integrated. The cleaning equipment integrated etch / strip device of the present invention includes an etch module for etching the substrate by spraying an etchant onto a substrate, and a first module installed on one side of the etch module to clean the substrate supplied from the etch module. A stripper provided on the second side of the first cleaning module opposite to the first side of the first cleaning module facing the cleaning module and the etch module to remove the photoresist formed on the substrate. A strip module spraying at a pressure and a second side of the strip module opposite to the first side of the strip module facing the first cleaning module, the substrate when the substrate is supplied from the strip module. A rinse portion for neutralizing the stripper sprayed onto the substrate, a third side of the first cleaning module not facing the etch module and the strip module, and the spool portion; A second cleaning module installed between the second side of the rinse portion that does not face the lip module and installed on the third side of the rinse portion that does not face the strip module and the second cleaning module; A third cleaning module for cleaning the substrate is provided.

According to the present invention, since the etch process, the strip process and the cleaning process can be performed with one device, the process time and installation space can be minimized.

Description

Cleaning Equipment Integrated Etch / Strip Device {Unification Type Cleaning and Etch / Strip Apparatus}             

1 is a cross-sectional view showing a conventional thin film transistor.

2 shows a conventional etch / strip device.

3 is a view showing a conventional washing apparatus.

4 is a view showing the cleaning equipment integrated etch / strip device of the present invention.

FIG. 5 shows a detail of the strip buffer shown in FIG. 4; FIG.

<Description of Symbols for Main Parts of Drawings>

2,74,92,128: Loader 4,54,72,94,104,126: Cassette

6,24,28,52,106,124: Robot 10,12,14,112,114,116: Etching

8,30,78,108,110,130,132,154,156: buffer part

16,18,20,42,44,46,82,84,86,88,118,120,146,148,150,160

22,48,90,122,152: Drying part 26,50: Conveyor

32,34,36,38,134,136: Peeling part 40,144: Rinse part

56,96: unloader 80,158: ozone                 

102: loader / unloader section 138: strip buffer

218 substrate 220 gate electrode

222: gate insulating film 224: semiconductor layer

226 ohmic contact layer 228 source electrode

230: drain electrode 232: protective film

234 pixel electrodes

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for manufacturing a liquid crystal display device, and more particularly to an etch / strip device in which an etch, strip, and cleaning device are integrated.

Liquid crystal displays have advantages of small size, thinness, and low power consumption, and are used as notebook PCs, office automation devices, and audio / video devices. In particular, an active matrix liquid crystal display device using a thin film transistor (hereinafter referred to as "TFT") as a switch element is suitable for displaying a dynamic image.

In an active matrix type liquid crystal display, an image corresponding to a video signal such as a television signal is displayed on a pixel matrix (Picture Element Matrix or Pixel Matrix) in which pixels are arranged at intersections of gate lines and data lines. Each of the pixels includes a liquid crystal cell that adjusts the amount of transmitted light according to the voltage level of the data signal from the data line. The TFT is provided at the intersection of the gate line and the data lines to switch the data signal to be transmitted to the liquid crystal cell in response to the scan signal from the gate line.

Referring to FIG. 1, a TFT formed over a substrate 218 is shown. The manufacturing process of the TFT is as follows. First, the gate electrode 220 and the gate line are deposited on the substrate 218 with a metal such as Al, Mo, Cr, and the like, and then patterned by photolithography. On the substrate 218 on which the gate electrode 220 is formed, a gate insulating film 222 made of an inorganic film such as SiNx is formed. On the gate insulating film 222, a semiconductor layer 224 made of amorphous silicon (hereinafter referred to as "a-Si") and an ohmic contact layer 226 made of a-Si doped with n + ions are successively deposited. . The source electrode 228 and the drain electrode 230 made of metal such as Mo or Cr are formed on the ohmic contact layer 226 and the gate insulating layer 222. The source electrode 228 is patterned integrally with the data line. The ohmic contact layer 226 exposed through the opening between the source electrode 228 and the drain electrode 230 is removed by dry etching or wet etching. A protective film 232 made of SiNx or SiOx is deposited on the substrate 218 to cover the TFT. Subsequently, a contact hole is formed on the passivation layer 232. The pixel electrode 234 made of indium tin oxide is deposited to be connected to the drain electrode 230 through the contact hole. In such a TFT process, a photoresist pattern formation, an etching process, a PR pattern stripping process, and the like are performed during the patterning of the electrode layers 220, 228, and 230 and the formation of contact holes. Such a PR pattern forming process, an etching process, and a PR pattern removing process are used not only in the TFT manufacturing process but also in the color filter forming process and the electrode patterning process of the upper substrate.

2 shows a conventional etch / strip device.

Referring to FIG. 2, the conventional etch / strip device includes a loader part 2 and an unloader part 54 on which cassettes 4 and 56 on which a substrate (not shown) is mounted are mounted, and a robot for moving the substrate. , 6, 24, 28, 52 and conveyors 26, 50, buffer portions 8, 30 for buffering the time difference between processes, and etch portions 10, 12 for etching a substrate. 14), the cleaning parts 16, 18, 20, 42, 44 and 46 for cleaning the substrate, the drying parts 22 and 48 for drying the substrate and the PR on the substrate to remove the stripper. Peeling portions 32, 34, 36, 38 and a rinse portion 40 for neutralizing the stripper on the substrate. The cassettes 4 and 56 are loaded with a predetermined number of substrates. The first robot 6 moves the substrate loaded in the cassette 4 to the first buffer portion 8 so that the etch / strip process can proceed. The fourth robot 52 moves the substrate on which the etch / strip process is completed to the cassette 56. The etch portions 10, 12, and 14 etch the substrate by spraying an etchant, which is a mixture of Mono Ethanol Acetone (MEA), Butyl Di Glycol (BDG), and N-Methanol-Pyrrolidone (NMP) at a predetermined pressure. The first to third cleaning portions 16, 18, and 20 clean the etched substrate. Drying sections 22 and 48 dry the cleaned substrate. The drying units 22 and 48 rotate the substrate at a predetermined rpm or more, or inject air at a predetermined pressure or more to dry the substrate. The stripping portions 32, 34, 36 and 38 spray a stripper, which is a mixture of H ₃ PO ₄ , CH ₃ COOH, HNO ₃ , over a predetermined pressure to remove PR on the substrate. The rinse section 40 neutralizes the stripper on the substrate using an IPA (Isopropyl alcohol) solution. The fourth to sixth cleaning parts 42, 44, and 46 clean the stripped substrate.

When the substrate is etched / striped in detail, first, the substrate loaded in the cassette 4 is moved to the first buffer unit 8 by the first robot 6. The first buffer unit 8 temporarily loads the substrate moved from the first robot 6 to buffer the time difference between the loader unit 2 and the etching unit 60. The substrate temporarily loaded in the first buffer unit 8 is sequentially moved to the first etch unit 10, the second etch unit 12, and the third etch unit 14. The etch portions 10, 12, and 14 spray the etchant at a predetermined pressure to etch the substrate. The substrate etched in the etch portions 10, 12, 14 is moved to the first cleaning portion 16. The first cleaning unit 16 sprays DI (Deionize Water) at a high pressure to remove the etchant on the substrate. The substrate cleaned by the first cleaning unit 16 is sequentially moved to the second cleaning unit 18 and the third cleaning unit 20. The second and third cleaning parts 18 and 20 clean the substrate by spraying DI at a predetermined pressure. The substrate cleaned in the cleaning parts 16, 18, and 20 is moved to the first drying part 22. The first drying unit 22 rotates the substrate at a predetermined rpm or higher or injects air at a high pressure to dry the DI on the substrate. The substrate dried in the first drying unit 22 is moved to the conveyor 26 by the second robot 24. The conveyor 26 moves the substrate etched in the etching unit 60 to the strip unit 70. The substrate moved by the conveyor 26 is moved to the second buffer portion 30 by the third robot 28. The second buffer part 30 temporarily loads the substrate moved from the third robot 28 to buffer the process time difference between the etching part 60 and the strip part 70. The substrate temporarily loaded in the second buffer part 30 is sequentially moved to the first peeling part 32, the second peeling part 34, the third peeling part 36, and the fourth peeling part 38. The stripping portions 32, 34, 36 and 38 spray the stripper at a predetermined pressure to remove PR on the substrate. The substrate stripped at the stripping portions 32, 34, 36, 38 is moved to the rinse portion 40. The rinse unit 40 neutralizes the stripper solution on the substrate by spraying the IPA solution at a predetermined pressure. The substrate sprayed with the IPA solution from the rinse unit 40 is sequentially moved to the fourth cleaning unit 42, the fifth cleaning unit 44, and the sixth cleaning unit 46. The fourth cleaning unit 42 forms a waterfall-type water film to clean the stripper and the IPA solution on the substrate and to remove foreign substances on the substrate. The fifth cleaner 44 sprays DI with a strong pressure to remove foreign substances on the substrate. The sixth cleaner 46 sprays DI at a predetermined pressure to clean the substrate. The substrate cleaned in the sixth cleaning unit 46 is moved to the second drying unit 48. The second drying unit 48 dries the DI on the substrate by rotating the substrate at a predetermined rpm or more or by injecting air at a high pressure. The substrate dried in the second drying unit 48 is moved to the conveyor 50. The substrate moved from the second drying section 48 to the conveyor 50 is loaded into the cassette 56 in the unloader section 54 by the fourth robot 52.

3 is a view showing a conventional washing apparatus.

Referring to FIG. 3, the conventional cleaning apparatus includes a loader unit 74 and an unloader unit 96 on which cassettes 72 and 94 are mounted, robots 76 and 92 for moving a substrate, and a process. A buffer unit 78 for buffering the time difference between the substrate, an ozone unit 80 for improving the hydrophilicity of the substrate, cleaning units 82, 84, 86, 88 for cleaning the substrate, and drying the substrate It is provided with a drying unit 90 for the purpose. The cassettes 72 and 94 are loaded with a predetermined number of substrates. The first robot 76 moves the substrate loaded on the cassette 72 to the buffer unit 78 so that the cleaning process may proceed. The second robot 92 moves the substrate on which the cleaning process is completed to the cassette 94. The ozone unit 80 sprays ozone water at a predetermined pressure to improve the hydrophilicity of the substrate. The cleaning units 82, 84, 86, and 88 spray DI at a predetermined pressure to clean the substrate. The drying unit 90 rotates the substrate at a predetermined rpm or more or sprays air at a predetermined pressure or more to dry the substrate.

The process of cleaning the substrate will be described in detail. First, the first robot 76 loads the substrate from the cassette 72 mounted in the loader portion 74 and supplies it to the buffer portion 78. The buffer unit 78 temporarily loads the substrate moved from the first robot 76 to buffer the process time difference between the loader unit 74 and the cleaning unit 100. The substrate temporarily loaded in the buffer portion 78 is moved to the ozone portion 80. The ozone unit 80 sprays ozone water at a predetermined pressure to improve the hydrophilicity of the substrate. The substrate sprayed with ozone water from the ozone unit 80 is sequentially moved to the first cleaning unit 82, the second cleaning unit 84, the third cleaning unit 86, and the fourth cleaning unit 88. The cleaning units 82, 84, 86, and 88 spray DI at a predetermined pressure to clean the substrate. The substrate cleaned in the cleaning parts 82, 84, 86, and 88 is moved to the drying part 90. The drying unit 90 rotates the substrate at a predetermined rpm or higher or injects air at a high pressure to dry the DI on the substrate. The substrate dried in the drying unit 90 is loaded into the cassette 94 mounted to the unloader unit 96 by the second robot 92.

However, since the conventional etch / strip apparatus and the cleaning apparatus are configured as separate apparatuses, a lot of processing time is consumed and a large installation space is required. In addition, the conventional etch / strip apparatus could not proceed separately with the etch or strip process.

Accordingly, it is an object of the present invention to provide an etch / strip device incorporating a cleaning device capable of integrating an etch / strip device and a cleaning device.

In order to achieve the above object, the cleaning equipment integrated etch / strip device of the present invention includes an etch module for etching the substrate by spraying an etchant onto a substrate, and the substrate installed on one side of the etch module and supplied from the etch module. A photoresist provided on the substrate, the first cleaning module for cleaning the substrate and a second side of the first cleaning module opposite to the first side of the first cleaning module facing the etch module. A strip module for spraying the stripper at a predetermined pressure to be removed, and a second side of the strip module opposite to the first side of the strip module facing the first cleaning module, the substrate being removed from the strip module. A rinse portion for neutralizing the stripper sprayed on the substrate when the substrate is supplied, and the first module not facing the etch module and the strip module. A second cleaning module installed between the third side of the cleaning module and the second side of the rinsing portion not facing the strip module, the second cleaning module for cleaning the substrate, and the surface not facing the strip module and the second cleaning module. It is provided on the third side of the rinse portion and provided with a third cleaning module for cleaning the substrate.

Other objects and features of the present invention in addition to the above objects will become apparent from the description of the embodiments with reference to the accompanying drawings.

Hereinafter, exemplary embodiments of the present invention will be described with reference to FIGS. 4 and 5.

Figure 4 shows the cleaning equipment integrated etch / strip device of the present invention.

4 is a washing machine integrated etch / strip device of the present invention is a loader / unloader unit 102 and the loader unit 128, the cassettes 104, 126 loaded with the substrate is mounted, and the robots for moving the substrate ( 106,124, buffer portions 108, 110, 130, 132, 140, 154, 156 for buffering the time difference between processes, etch portions 112, 114, 116 for etching the substrate with an etchant, strips 134, 136, 142 and strips for removing PR on the substrate with a stripper The buffer 138, the cleaning parts 118, 120, 146, 148, 150 and 160 for cleaning the substrate, the drying parts 122 and 152 for drying the substrate, and the ozone part 158 for spraying ozone water onto the substrate to improve the hydrophilicity of the substrate. And a rinse section 144 for neutralizing the stripper on the substrate. The cassettes 104 and 126 are loaded with a predetermined number of substrates. The first robot 106 loads the substrate from the cassette 104 into the first buffer unit 108 and unloads the substrate from the seventh buffer unit 156 into the cassette 104. The second robot 124 loads the substrate from the cassette 126 into the second cleaning unit 120. The etch portions 112, 114, and 116 spray the etchant at a predetermined pressure to etch the substrate. The cleaning units 118, 120, 146, 148, 150, and 160 clean the substrate using a brush, or clean the substrate by spraying DI at a predetermined pressure. At this time, the pressure at which DI is injected is different according to the cleaning parts 118, 120, 146, 148, 150, and 160. The drying units 122 and 152 rotate the substrate at a predetermined rpm or more, or inject air at a predetermined pressure or more to dry the substrate. The stripping portions 134, 136, 142 and the stream buffer 138 spray the stripper at a predetermined pressure to remove the PR on the substrate. The rinse section 144 neutralizes the stripper on the substrate using the IPA solution. The ozone unit 158 injects ozone water at a predetermined pressure to improve the hydrophilicity of the substrate. In the cleaning equipment integrated etch / strip device of the present invention, an etching process, a strip process, and a cleaning process may be separately performed as necessary. The first cleaning unit and the second cleaning unit are collectively referred to as a first cleaning module, and the ozone unit and the sixth cleaning unit are collectively referred to as a second cleaning module. The fifth washing unit, the second drying unit and the sixth buffer unit are collectively referred to as a third washing module.

When the etching process is performed in detail, the first robot 106 first loads the substrate loaded in the cassette 104 mounted on the loader / unloader unit 102 to the first buffer unit 108. Let's do it. The substrate loaded into the first buffer unit 108 is moved to the second buffer unit 110 via the first buffer unit 108. The first and second buffer units 108 and 110 temporarily load the substrate moved from the first robot 106 to buffer the time difference between the processes. The substrate temporarily loaded in the first and second buffer units 108 and 110 is sequentially moved to the first etch unit 112, the second etch unit 114, and the third etch unit 116. The etch portions 112, 114, and 116 etch the substrate by spraying the etchant at a predetermined pressure. The substrate etched in the etch portions 112, 114, 116 is moved to the first cleaning portion 118. The first cleaning unit 118 removes the etchant on the substrate by spraying DI with a strong pressure. The substrate cleaned in the first cleaning unit 118 is moved to the second cleaning unit 120. The second cleaning unit 120 cleans the substrate by spraying DI at a predetermined pressure. The substrate cleaned in the second cleaning unit 120 is moved to the ozone unit 158. The ozone unit 158 sprays ozone water at a predetermined pressure on the substrate in order to improve the hydrophilicity of the substrate before the cleaning process. The substrate sprayed with ozone water from the ozone unit 158 is moved to the sixth cleaning unit 160. The sixth cleaning unit 160 cleans the substrate by spraying DI at a predetermined pressure. The substrate cleaned in the sixth cleaning unit 160 is moved to the rinse unit 144. The rinse unit 144 sprays DI at a predetermined pressure to prevent the substrate from drying. That is, the rinse unit 144 sprays the IPA solution when the substrate, which has been stripped, is moved, and in other cases, DI is sprayed. To this end, the rinse unit 144 is provided with an automatic valve (Auto Valve). The substrate that has been cleaned by the rinse unit 144 is moved to the third cleaning unit 146. The third cleaning unit 146 cleans the substrate using a brush. The substrate cleaned in the third cleaner 146 is moved to the fourth cleaner 148. The fourth cleaning unit 148 removes the foreign matter on the substrate by spraying DI with a strong pressure. The substrate cleaned by the fourth cleaner 148 is moved to the fifth cleaner 150. The fifth cleaning unit 150 sprays DI at a higher pressure than the fourth cleaning unit 148 to remove residual foreign matter on the substrate. The substrate cleaned in the fifth cleaner 150 is moved to the second dryer 152. The second drying unit 152 rotates the substrate at a predetermined rpm or higher or injects air at a high pressure to dry the DI on the substrate. The substrate dried in the second drying unit 152 is moved to the sixth buffer unit 154 and the seventh buffer unit 156. The sixth buffer part 154 and the seventh buffer part 156 temporarily load the substrate to buffer the time difference between the processes. When the substrate is moved to the seventh buffer unit 156, the first robot 106 unloads the substrate. That is, the substrate is moved to the cassette 104.

The operation process when the strip process is described in detail, first, the second robot 124 moves the substrate loaded in the cassette 126 mounted on the loader unit 128 to the second cleaning unit 120. The second cleaning unit 120 injects DI at a predetermined pressure to remove foreign substances on the substrate. The substrate cleaned in the second cleaning unit 120 is moved to the first drying unit 122. The first drying unit 122 rotates the substrate at a predetermined rpm or higher or injects air at a high pressure to dry the DI on the substrate. The substrate dried in the first drying unit 122 is moved to the third buffer unit 130 and the fourth buffer unit 132. The third buffer unit 130 and the fourth buffer unit 132 temporarily load the substrate to buffer the time difference between the processes. The substrate temporarily loaded in the fourth buffer part 132 is moved to the first peeling part 134 and the second peeling part 136. The first and second peeling portions 134 and 136 spray the stripper at a predetermined pressure to remove the PR on the substrate. The substrate stripped at the second peeling unit 136 is moved to the strip buffer 138. The strip buffer 138 has two strip nozzles 162 and 164 as shown in FIG. When the substrate is moved from the second peeling part 136 to the strip buffer 138, the stripper is supplied from the first strip nozzle 162 and the substrate is moved from the strip buffer 138 to the fifth buffer part 140. When the stripper is supplied from the second strip nozzle (164). The fifth buffer unit 140 temporarily loads the substrate to buffer the time difference between the processes. The substrate temporarily loaded in the fifth buffer unit 140 is moved to the third peeling unit 142. The third peeling unit 142 sprays the stripper at a predetermined pressure to remove residual PR on the substrate. The substrate stripped from the third peeling part 142 is moved to the rinse part 144. The rinse unit 144 neutralizes the stripper on the substrate by spraying the IPA solution at a predetermined pressure. The substrate supplied with the IPA solution from the rinse unit 144 is moved to the third cleaning unit 146. The third cleaning unit 146 cleans the substrate using a brush. The substrate cleaned in the third cleaner 146 is moved to the fourth cleaner 148. The fourth cleaning unit 148 removes the foreign matter on the substrate by spraying DI with a strong pressure. The substrate cleaned by the fourth cleaner 148 is moved to the fifth cleaner 150. The fifth cleaning unit 150 sprays DI at a higher pressure than the fourth cleaning unit 148 to remove residual foreign matter on the substrate. The substrate cleaned in the fifth cleaner 150 is moved to the second dryer 152. The second drying unit 152 rotates the substrate at a predetermined rpm or higher or injects air at a high pressure to dry the DI on the substrate. The substrate dried in the second drying unit 152 is moved to the sixth buffer unit 154 and the seventh buffer unit 156. The sixth buffer part 154 and the seventh buffer part 156 temporarily load the substrate to buffer the time difference between the processes. When the substrate is moved to the seventh buffer unit 156, the first robot 106 unloads the substrate. That is, the substrate is moved to the cassette 104.

The operation process when the cleaning process is performed will be described in detail. First, the second robot 124 moves the substrate loaded on the cassette 126 mounted on the loader unit 128 to the second cleaning unit 120. The second cleaning unit 120 injects DI at a predetermined pressure to remove foreign substances on the substrate. The substrate cleaned in the second cleaning unit 120 is moved to the ozone unit 158. The ozone unit 158 injects ozone water at a predetermined pressure to improve the hydrophilicity of the substrate. The substrate supplied with the ozone water from the ozone unit 158 is moved to the sixth cleaning unit 160. The sixth cleaning unit 160 cleans the substrate by spraying DI at a predetermined pressure. The substrate cleaned in the sixth cleaning unit 160 is moved to the rinse unit 144. The rinse unit 144 sprays DI at a predetermined pressure to prevent the substrate from drying before the substrate is moved to the third cleaning unit 146. The substrate supplied with DI from the rinse unit 144 is moved to the third cleaning unit 146. The third cleaning unit 146 cleans the substrate using a brush. The substrate cleaned in the third cleaner 146 is moved to the fourth cleaner 148. The fourth cleaning unit 148 removes the foreign matter on the substrate by spraying DI with a strong pressure. The substrate cleaned by the fourth cleaner 148 is moved to the fifth cleaner 150. The fifth cleaning unit 150 sprays DI at a higher pressure than the fourth cleaning unit 148 to remove residual foreign matter on the substrate. The substrate cleaned in the fifth cleaner 150 is moved to the second dryer 152. The second drying unit 152 rotates the substrate at a predetermined rpm or higher or injects air at a high pressure to dry the DI on the substrate. The substrate dried in the second drying unit 152 is moved to the sixth buffer unit 154 and the seventh buffer unit 156. The sixth buffer part 154 and the seventh buffer part 156 temporarily load the substrate to buffer the time difference between the processes. When the substrate is moved to the seventh buffer unit 156, the first robot 106 unloads the substrate. That is, the substrate is moved to the cassette 104.

The operation process when the etch / strip process is performed will be described in detail. First, the first robot 106 may load the substrate loaded on the cassette 104 mounted on the loader / unloader unit 102. Load with. The substrate loaded into the first buffer unit 108 is moved to the second buffer unit 110 via the first buffer unit 108. The first and second buffer units 108 and 110 temporarily load the substrate moved from the first robot 106 to buffer the time difference between the processes. The substrate temporarily loaded in the first and second buffer units 108 and 110 is sequentially moved to the first etch unit 112, the second etch unit 114, and the third etch unit 116. The etch portions 112, 114, and 116 etch the substrate by spraying the etchant at a predetermined pressure. The substrate etched in the etch portions 112, 114, 116 is moved to the first cleaning portion 118. The first cleaning unit 118 removes the etchant on the substrate by spraying DI with a strong pressure. The substrate cleaned in the first cleaning unit 118 is moved to the second cleaning unit 120. The second cleaning unit 120 cleans the substrate by spraying DI at a predetermined pressure. The substrate cleaned in the second cleaning unit 120 is moved to the first drying unit 122. The first drying unit 122 rotates the substrate at a predetermined rpm or higher or injects air at a high pressure to dry the DI on the substrate. The substrate dried in the first drying unit 122 is moved to the third buffer unit 130 and the fourth buffer unit 132. The third buffer unit 130 and the fourth buffer unit 132 temporarily load the substrate to buffer the time difference between the processes. The substrate temporarily loaded in the fourth buffer unit 132 is sequentially moved to the first peeling unit 134, the second peeling unit 136, and the strip buffer 138. The first peeling part 134, the second peeling part 136, and the strip buffer 138 spray the stripper at a predetermined pressure to remove the PR on the substrate. The substrate stripped from the strip buffer 138 is moved to the fifth buffer unit 140. The fifth buffer unit 140 temporarily loads the substrate to buffer the time difference between the processes. The substrate temporarily loaded in the fifth buffer unit 140 is moved to the third peeling unit 142. The third peeling unit 142 sprays the stripper at a predetermined pressure to remove residual PR on the substrate. The substrate stripped from the third peeling part 142 is moved to the rinse part 144. The rinse unit 144 neutralizes the stripper on the substrate by spraying the IPA solution at a predetermined pressure. The substrate supplied with the IPA solution from the rinse unit 144 is moved to the third cleaning unit 146. The third cleaning unit 146 cleans the substrate using a brush. The substrate cleaned in the third cleaner 146 is moved to the fourth cleaner 148. The fourth cleaning unit 148 removes the foreign matter on the substrate by spraying DI with a strong pressure. The substrate cleaned by the fourth cleaner 148 is moved to the fifth cleaner 150. The fifth cleaning unit 150 sprays DI at a higher pressure than the fourth cleaning unit 148 to remove residual foreign matter on the substrate. The substrate cleaned in the fifth cleaner 150 is moved to the second dryer 152. The second drying unit 152 rotates the substrate at a predetermined rpm or higher or injects air at a high pressure to dry the DI on the substrate. The substrate dried in the second drying unit 152 is moved to the sixth buffer unit 154 and the seventh buffer unit 156. The sixth buffer part 154 and the seventh buffer part 156 temporarily load the substrate to buffer the time difference between the processes. The substrate moved to the seventh buffer portion 156 is moved to the cassette 104 in the loader / unloader portion 102 by the first robot 106.

As described above, according to the cleaning equipment integrated etch / strip device according to the present invention, the etch process, the strip process and the cleaning process can be performed with one device, thereby minimizing the process time and the installation space. In addition, according to the purpose of the cleaning equipment integrated etch / strip apparatus of the present invention, the etch process, the strip process and the cleaning process may be performed together, or each process may be performed separately.

Those skilled in the art will appreciate that various changes and modifications can be made without departing from the technical spirit of the present invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification but should be defined by the claims.

Claims (12)

An etch module for etching the substrate by spraying an etchant onto the substrate; A first cleaning module installed at one side of the etch module to clean the substrate supplied from the etch module; It is installed on the second side of the first cleaning module, which is opposite to the first side of the first cleaning module facing the etch module, and sprays the stripper at a predetermined pressure to remove the photoresist formed on the substrate. Strip module, It is provided on the second side of the strip module, which is opposite to the first side of the strip module facing the first cleaning module, and neutralizes the stripper sprayed on the substrate when the substrate is supplied from the strip module. Rinse part to make it, A second cleaning module installed between the third side of the first cleaning module not facing the etch module and the strip module and the second side of the rinsing portion not facing the strip module, for cleaning the substrate; And a third cleaning module installed on the third side of the rinse portion not facing the strip module and the second cleaning module to clean the substrate. The method of claim 1, A cassette on which the plurality of substrates are stacked; A loader / unloader unit on which the cassette on which the substrate loaded into the etch module is loaded and the cassette on which the substrates unloaded from the third cleaning module are loaded are mounted; And a loader unit on which the cassette on which the substrates loaded into the first cleaning module are loaded is mounted. The method of claim 1, And the rinse unit sprays deionized water at a predetermined pressure when the substrate is supplied from the second cleaning module. The method of claim 2, At least one buffer unit is installed between the etch module, the third cleaning module and the loader / unloader unit to buffer a process time difference between the etch module, the third cleaning module and the loader / unloader unit. Cleaning equipment integrated etch / strip device. The method of claim 1, The etch module, At least one etching portion for etching the substrate by spraying an etchant at a predetermined pressure on the substrate; And a cleaning unit for removing the etchant on the substrate by injecting deionized water at a predetermined pressure on the substrate. The method of claim 3, wherein The strip module, A first drying unit for drying the substrate supplied from the first cleaning module; At least one peeling part for removing a photoresist formed on the substrate by spraying a stripper at a predetermined pressure on the substrate; And at least one second buffer unit disposed between the first drying unit and the peeling unit to buffer a process time difference. The method of claim 1, The second cleaning module, An ozone unit for supplying ozone water to the substrate to improve hydrophilicity of the substrate; And a cleaning unit for injecting deionized water at a predetermined pressure onto the substrate to clean the substrate. The method of claim 1, The third cleaning module, A fourth cleaning unit for cleaning the substrate supplied from the rinse unit using a brush; A fifth cleaning unit and a sixth cleaning unit for cleaning the substrate by injecting DI water with a predetermined pressure to the substrate supplied from the fourth cleaning unit; And a second drying part for drying the substrate supplied from the sixth cleaning part. The method of claim 2, When the substrate is etched, the substrate is mounted to the loader / unloader part via the loader / unloader part, the etch module, the first cleaning module, the second cleaning module, the rinse part, and the third cleaning module sequentially. Cleaning equipment integrated etch strip device, characterized in that loaded on the cassette. The method of claim 2, When the substrate is cleaned, the substrate is loaded into the cassette mounted to the loader / unloader unit via the loader unit, the first cleaning module, the second cleaning module, the rinse unit, and the third cleaning module sequentially. Characterized in that the cleaning equipment integrated etch strip device. The method of claim 2, When the substrate is stripped, the substrate is loaded into the cassette mounted to the loader / unloader unit via the loader unit, the first cleaning module, the strip module, the rinse unit, and the third cleaning module sequentially. Etch strip device integrated with cleaning equipment. The method of claim 2, When the substrate is etched / striped, the substrate is mounted to the loader / unloader part via the loader / unloader part, the etch module, the first cleaning module, the strip module, the rinse part, and the third cleaning module sequentially. Cleaning equipment integrated etch strip device, characterized in that loaded on the cassette.

Images