KR100686237B1 - panel having color filters and a manufacturing method thereof - Google Patents

Abstract

In the present invention, after forming a black matrix on the substrate, a yellow filter is applied, a red filter is applied, and then patterned by exposing with a mask having a different transmittance of light depending on the position. At this time, both the yellow filter and the red filter are left in the first area, and only the yellow filter is left in the second area. Next, after applying a cyan filter and a blue filter sequentially, it exposes using the mask from which light transmittance differs according to a position. Subsequently, the patterning process leaves a cyan filter and a blue filter in the third region, leaves only a cyan filter on the yellow filter in the second region, and removes all other portions. Next, a common electrode is formed of a transparent conductive material. Therefore, in the present invention, the color filter may be formed of a double layer having different light transmitting properties to form a color filter substrate by two photolithography processes.

Color filter, organic insulating film, high opening ratio, process water

Description

Substrate including color filter and manufacturing method thereof

1 to 6 illustrate a color filter substrate and a method of manufacturing the same according to an embodiment of the present invention,

7 is a layout view of a thin film transistor substrate according to an embodiment of the present invention;

8 and 9 are cross-sectional views taken along the line Ⅷ-Ⅷ 'and Ⅸ-Ⅸ' in FIG. 7, respectively.

10A is a layout view of a thin film transistor substrate in a first step of manufacturing in accordance with an embodiment of the invention,

FIG. 10B is a cross-sectional view taken along the line VIIb-VIIb ′ in FIG. 10A;

FIG. 11A is a layout view of a thin film transistor substrate next to FIG. 10B;

FIG. 11B is a cross-sectional view taken along the line VIIb-VIIb ′ in FIG. 11A;

12A is a layout view of a thin film transistor substrate at a next step of FIG. 11B;

FIG. 12B is a cross-sectional view taken along the line XXXIIb-XXXIIb ′ in FIG. 12A, and FIG.

FIG. 13A is a layout view of a thin film transistor substrate in a next step of FIG. 12B;

FIG. 13B is a cross-sectional view taken along the line XIIIb-XIIIb 'of FIG. 13A;

14 to 17 are cross-sectional views taken along line XIV-XIV 'in FIG. 13A, which illustrates a method of manufacturing a color filter according to the present invention.

18A is a layout view of a thin film transistor substrate in a next step of FIG. 17,

FIG. 18B is a cross-sectional view taken along the line VIIb-VIIb 'of FIG. 18A;

19 is a cross-sectional view of a thin film transistor substrate according to a second exemplary embodiment of the present invention.

The present invention relates to a substrate including a color filter, a method of manufacturing the same, and a thin film transistor array substrate using the same, and a method of manufacturing the same.

The color display device for representing an image includes a substrate on which a color filter for transmitting light of red (R), green (G), and blue (B) is formed. In addition, the blue color filters are disposed adjacent to each other, and the color is controlled by applying a signal of the corresponding color to each color filter to control the brightness.

Such color filters are made by repeating the process of applying and photo-etching the photosensitive organic material. At this time, the material used as the material of the color filter is expensive, the number of masks used for photolithography represents the number of processes, the manufacturing cost is largely different depending on the number of masks, so in order to reduce the production cost Less is desirable.

In the liquid crystal display, a liquid crystal material is injected between the upper substrate on which the color filter and the common electrode are formed and the lower substrate on which the thin film transistor and the pixel electrode are formed. It is a device that forms an electric field by changing the arrangement of the liquid crystal molecules and thereby controls the transmittance of light to express an image.

An object of the present invention is to simplify the manufacturing process of a substrate including a color filter.

In order to achieve this problem, the present invention forms a color filter in a double layer having different light transmission properties.

In the method of manufacturing a color filter substrate according to the present invention, a black matrix is formed on a transparent substrate, a color filter is formed of a double layer having different light transmission properties between neighboring black matrices, and then an electrode made of a transparent conductive material is formed. do.

The forming of the color filter may include applying a first color filter, applying a second color filter, exposing and developing the first and second color filters, and then applying the first and second color filters to the first region. And leaving only the first color filter in the second area and removing both the first and second color filters in the third and remaining areas.

In this case, in the exposure of the color filter, a portion corresponding to the first region has a light transmittance of about 0%, a portion corresponding to the second region has a light transmittance of 30% or less, and a portion corresponding to the third and the remaining regions. A mask having a transmittance of silver of almost 100% can be used.                     

The forming of the color filter may include applying a third color filter, applying a fourth color filter, exposing and developing the third and fourth color filters, and applying the third and fourth color filters to the third region. Leaving only the third color filter in the second region, and removing the third and fourth color filters in the first and the remaining regions.

In this case, in the exposure of the color filter, a portion corresponding to the third region has a light transmittance of about 0%, a portion corresponding to the second region has a light transmittance of 30% or less, and a portion corresponding to the first and remaining regions. A mask having a transmittance of silver of almost 100% can be used.

Here, the first color filter may be a yellow filter, the second color filter may be a red filter, the third color filter may be a cyan filter, and the fourth color filter may be a blue filter.

Alternatively, the first color filter may be a cyan filter, the second color filter is a blue filter, the third color filter is a yellow filter, and the fourth color filter may be a red filter.

In the present invention, it is preferable that the second and fourth color filters are made of a material having a greater photosensitive property than the first and third color filters, respectively.

The coating of the color filter may use a spin coating method, a roll coating method, or a method of manufacturing the color filter in a thin film form and transferring the color filter onto a substrate.

The color filter substrate according to the present invention includes an electrode made of a transparent conductive material and a color filter formed between a black matrix formed on a transparent substrate and a neighboring black matrix and having a different light transmission property.

Here, a lower first color filter and an upper second color filter are formed in the first region, and a lower first color filter and an upper third color filter are formed in the second region, and in the third region, A third color filter is formed at the lower portion and a fourth color filter is formed at the upper portion.

In this case, the first color filter may be a yellow filter, the second color filter may be a red filter, the third color filter may be a cyan filter, and the fourth color filter may be a blue filter.

Alternatively, the first color filter may be a cyan filter, the second color filter is a blue filter, the third color filter is a yellow filter, and the fourth color filter may be a red filter.

In the thin film transistor substrate according to the present invention, a plurality of gate lines are formed on a transparent substrate, and a plurality of data lines are insulated from the gate lines and intersect the gate lines. A thin film transistor is formed of a gate electrode connected to the gate line, a source electrode connected to the data line, and a drain electrode separated from the source electrode, and receives a scan signal from the gate line to switch the image signal from the data line. The color filter which consists of a double film which has a property is formed. Next, an insulating film is formed on the color filter, and a pixel electrode is formed thereon.

Here, the color filter may be formed above the thin film transistor, or may be formed below the thin film transistor.

In the present invention, a lower first color filter and an upper second color filter are formed in the first region, a first color filter in the lower portion, and a third color filter in the upper portion are formed in the second region. In the region, a third color filter may be formed at a lower portion thereof and a fourth color filter may be formed at an upper portion thereof.                     

In this case, the first color filter may be a yellow filter, the second color filter may be a red filter, the third color filter may be a cyan filter, and the fourth color filter may be a blue filter.

Alternatively, the first color filter may be a cyan filter, the second color filter is a blue filter, the third color filter is a yellow filter, and the fourth color filter may be a red filter.

Meanwhile, in the present invention, the insulating film may be made of an organic insulating material.

The thin film transistor substrate according to the present invention may further include a storage electrode insulated from and overlapped with the gate line, and the storage electrode may be connected to the pixel electrode.

In the method of manufacturing a thin film transistor substrate according to the present invention, a plurality of gate lines are formed on the substrate, and a plurality of data lines are insulated from the gate lines and intersect the gate lines. Subsequently, a color filter made of a double film having different light transmitting properties is formed, and an insulating film is formed. Next, a pixel electrode is formed.

The forming of the color filter may include applying a first color filter, applying a second color filter, exposing and developing the first and second color filters, and then applying the first and second color filters to the first region. And leaving only the first color filter in the second area and removing both the first and second color filters in the third and remaining areas.

In this case, in the exposure of the color filter, a portion corresponding to the first region has a light transmittance of about 0%, a portion corresponding to the second region has a light transmittance of 30% or less, and a portion corresponding to the third and the remaining regions. A mask having a transmittance of silver of almost 100% can be used.

In addition, the forming of the color filter may include applying a third color filter, applying a fourth color filter, exposing and developing the third and fourth color filters, and forming third and fourth color filters in the third region. The method may include removing the third and fourth color filters from the first and remaining areas while leaving only the third color filter in the second area.

In this case, in the exposure of the color filter, a portion corresponding to the third region has a light transmittance of about 0%, a portion corresponding to the second region has a light transmittance of 30% or less, and a portion corresponding to the first and remaining regions. A mask having a transmittance of silver of almost 100% can be used.

Here, the first color filter may be a yellow filter, the second color filter may be a red filter, the third color filter may be a cyan filter, and the fourth color filter may be a blue filter.

Alternatively, the first color filter may be a cyan filter, the second color filter is a blue filter, the third color filter is a yellow filter, and the fourth color filter may be a red filter.

In the present invention, it is preferable that the second and fourth color filters are made of a material having a greater photosensitive property than the first and third color filters, respectively.

The coating of the color filter may use a spin coating method, a roll coating method, or a method of manufacturing the color filter in a thin film form and transferring the color filter onto a substrate.

As described above, in the present invention, since the color filter is formed by a double layer having different light transmission properties by using a mask having different light transmittance, a color filter for transmitting red, green, and blue light through two photolithography processes may be formed. Can be. Thus, the process can be reduced and manufacturing costs can be reduced. In addition, since the color filter can be formed on the thin film transistor substrate by this method, the width of the black matrix of the upper substrate can be narrowed, so that the aperture ratio can be increased.                     

Next, a color filter substrate for a liquid crystal display and a method of manufacturing the same according to an exemplary embodiment of the present invention will be described in detail with reference to FIGS. 1 to 6.

As shown in FIG. 1, a black matrix 20 having openings in regions A, B, and C sequentially arranged in the substrate 10 is formed in the color filter substrate according to the present invention. Next, color filter patterns 30, 40, and 50 formed of double layers are formed in the A, B, and C regions, respectively. The color filter patterns 30, 40, and 50 may overlap the edges of the black matrix 20. The color filter pattern 30 of the region A is formed of the lower yellow photosensitive layer 31 and the red photosensitive layer 32 of the upper portion, and the color filter pattern 40 of the region B is formed of the yellow photosensitive layer 41 of the lower region. The upper cyan photosensitive layer 42 is formed, and the color filter pattern 50 in the region C includes the lower cyan photosensitive layer 51 and the upper blue photosensitive layer 52.

In the present invention, the yellow photosensitive layers 31 and 41 transmit red and green light, the red photosensitive layer 32 transmits only red light, and the cyan photosensitive layers 42 and 51 transmit green and blue light. The blue photosensitive layer 52 transmits only blue light. Therefore, in the region A, only red light of the red and green light passing through the lower yellow photosensitive layer 31 may pass through the upper red photosensitive layer 32, so that only red light is transmitted. In region B, only the green light is transmitted while the red and green light passing through the lower yellow photosensitive layer 41 passes through the upper cyan photosensitive layer 42. Meanwhile, in the region C, only blue light is transmitted while green and blue light passing through the lower cyan photosensitive layer 51 passes through the upper blue photosensitive layer 52.

Thus, the color filter patterns 30, 40, and 50 transmit red, green, and blue light, respectively.                     

A method of manufacturing the color filter substrate including the color filter patterns 30, 40, and 50 will be described in detail with reference to FIGS. 2 to 6 and FIG. 1.

First, as shown in FIG. 2, Cr (chromium) or CrO _x / Cr is deposited and patterned on the glass substrate 10 by a sputtering method to form a black matrix 20 having a width of 20 to 30 μm. .

Next, as shown in FIG. 3, a yellow photosensitive resin 60 and a red photosensitive resin 70 having positive photosensitive are sequentially applied and subjected to exposure. In the mask 310 corresponding to the area A where both the layer 31 and the red photosensitive layer 32 will remain, a light shielding film 311 having a light transmittance of about 0% is formed, leaving only the yellow photosensitive layer 41. A slit or translucent film 312 is formed in the mask 310 corresponding to the region B to be light so that the transmittance of light is 30% or less, and since the film is not formed in the mask 310 corresponding to the remaining region, almost no light is formed. Allow 100% transmission. In this case, the upper red photoresist film 70 may be sensitive to photosensitivity, and the lower yellow photoresist film 60 may be dull, thereby increasing the exposure selectivity of the photoresist films 60 and 70. Here, the two photoresist layers 60 and 70 may be formed by a spin coating method or a roll coating method, or may be formed in a thin film form and transferred in advance.

Next, as illustrated in FIG. 4, the photosensitive films 60 and 70 are developed to remove the exposed portions. Therefore, yellow photosensitive layers and red photosensitive layers 31 and 32 are formed in region A, only yellow photosensitive layer 41 is formed in region B, and all other regions are removed.

Next, as shown in FIG. 5, a cyan photosensitive resin 80 and a blue photosensitive resin 90 having positive photosensitivity are coated and exposed, respectively, followed by the cyan photosensitive layer 51. A light blocking film 321 having a light transmittance of about 0% is formed in the mask 320 corresponding to the C region where both the blue photosensitive layer 52 and the blue photosensitive layer 52 remain, and in the B region where only the cyan photosensitive layer 42 remains. The corresponding mask 320 is formed with a slit or a translucent film 322 such that light transmittance is 30% or less, and a thin film is not formed in the mask 320 corresponding to the remaining area so that light is transmitted almost 100%. Be sure to Here, the two photoresist films 80 and 90 may be applied by spin coating or roll coating, or may be previously manufactured in a thin film form and transferred to the substrate.

Next, as illustrated in FIG. 6, the blue photosensitive film 90 and the cyan photosensitive film 80 are developed to form the cyan photosensitive layer 51 and the blue photosensitive layer 52 in the C region, and the yellow photosensitive layer 41 in the B region. The cyan photosensitive layer 42 is formed on the top layer) and all other regions are removed. Thus, the color filter patterns 30, 40, and 50 are completed. In this case, the cyan photosensitive layer 42 and the yellow photosensitive layer 41 of the region B may be formed to be partially shifted at the edges, so that the shifted position does not leave the black matrix 20 to prevent the generation of unwanted light. Here, the color filter patterns 30, 40, and 50 may overlap the black matrix 20 by 6 μm or more.

Next, as shown in FIG. 6, a transparent conductive material such as ITO is deposited to form a common electrode 100.                     

As described above, the present invention transmits red (R), green (G), and blue (B) light through two photolithography processes using a mask having three parts having different light transmittances and photosensitive films having complementary colors. Color filter patterns can be formed, which simplifies the process and reduces manufacturing costs. At this time, since the minimum line width resolution of the exposure machine is about 10 µm or larger than 3 to 4 µm on the thin film transistor substrate side, the mask can be easily manufactured.

In the present invention, the color filter pattern is formed of a positive photosensitive material in which the light-receiving portion is removed by exposing the light from the upper part of the color filter pattern, but the negative photosensitive material when the reverse part is subjected to the back exposure. It is also possible to form a color filter pattern.

On the other hand, the aperture ratio may be increased by forming a color filter pattern, which is generally formed on the upper substrate of the liquid crystal display, on the lower thin film transistor substrate. In addition, when the color filter pattern is formed on the thin film transistor substrate, since only the common electrode is formed on the upper substrate of the liquid crystal display, alignment errors do not occur when the upper and lower substrates are disposed, and the upper substrate may be thinned or a plastic substrate may be used. Manufacturing costs can also be reduced.

Next, a thin film transistor substrate including a color filter pattern formed using the same method as in the first embodiment and a method of manufacturing the same will be described in detail with reference to FIGS. 7 to 19B.

FIG. 7 is a layout view of a thin film transistor substrate for a liquid crystal display according to the present invention, and FIGS. 8 and 9 are cross-sectional views taken along the line VII-VII 'and VII-VII', respectively.

First, a plurality of gate lines 121 extending in the horizontal direction on the substrate 110 and the gate electrode 122 and the gate line 121 which are branches of the gate line 121 are positioned at one end of the gate line 121 to scan signals from the outside. A gate wiring including a gate pad 123 for receiving is formed. The gate wirings 121, 122, and 123 are formed of a double layer of Cr (chromium) layers 1211, 1221, and 1231 and Al-Nd (aluminum-neodymium) layers 1212, 1222, and 1232, but are single or triple layers. It can also be formed.

A gate insulating layer 130 is formed on the gate wirings 121, 122, and 123 to cover the gate wirings 121, 122, and 123.

A semiconductor layer pattern 141 formed of a material such as amorphous silicon is formed on the gate insulating layer 130, and on the gate insulating layer 130, the semiconductor layer pattern 141 is formed on the gate electrode 122, and is formed of amorphous silicon, which is heavily doped with n-type impurities such as phosphorus (P). The ohmic contact layer patterns 151 and 152 are formed. The contact layer patterns 151 and 152 are formed of two parts separated from the gate electrode 122.

A data line made of a conductive material such as Cr is formed on the gate insulating layer 130 and the contact layer patterns 151 and 152. The data line extends in the vertical direction and intersects the gate line 121, the data line 161, the source electrode 162 extending from the data line 161, the drain electrode 163 separated from the data line, and the data. It is formed at one end of the line 161 and includes a data pad 164 for receiving an image signal from the outside. A portion of the source electrode 162 and the drain electrode 163 are in contact with the two portions 151 and 152 of the contact layer pattern, respectively. The data lines 161, 162, 163, and 164 may also be formed of a single layer, a double layer, or a triple layer similarly to the gate lines 121, 122, and 123. The storage electrode 165 is formed on the gate line 121 between the adjacent data lines 161 with the same material as the data lines 161, 162, 163, and 164. Are connected to form a storage capacitor together with the gate line 121.

A passivation layer 170 made of silicon nitride is formed on the data lines 161, 162, 163, and 164, the storage electrode 165, and the exposed semiconductor layer pattern 141 to cover them.

Color filter patterns 181, 182, and 183 are formed in the pixel area defined by the gate line 121 and the data line 161 intersecting the passivation layer 170. The color filter patterns 181, 182, and 183 are respectively formed. ) Is a yellow photosensitive layer 1811, a red photosensitive layer 1812, a yellow photosensitive layer 1821, and a cyan photosensitive layer 1822 so that red, green, and blue light passes through the A ′, B ′, and C ′ regions, respectively. A double layer of a cyan photosensitive layer 1831 and a blue photosensitive layer 1832 is formed. The edges of the color filter patterns 181, 182, and 183 overlap the data line 161, and overlap the gate line 121 and the storage electrode 165 at the front end.

An organic insulating layer 190 is formed on the color filter patterns 181, 182, and 183 to cover them. In addition, the organic insulating layer 190 includes a gate pad 123, a data pad 164, a drain electrode 163, together with the color filter patterns 181, 182, and 183, the passivation layer 170, or the gate insulating layer 130. Contact holes 191, 192, 193, and 194 exposing the sustain electrode 165 are formed. At this time, when the gate pad 123 is formed as a double layer of the Cr layer 1231 and the Al-Nd layer 1232, the upper Al-Nd layer 1232 is removed to remove the lower Cr layer 1231. ) Is desirable.

The pixel electrode 201, the auxiliary gate pad 202, and the auxiliary data pad 203 made of a transparent conductive material such as ITO are formed on the organic insulating layer 190. The pixel electrode 201 is wider than the color filter patterns 181, 182, and 183, and an edge thereof overlaps the data line 161, and is connected to the storage electrode 165 through the contact hole 194. have. In addition, the pixel electrode 201 is also connected to the drain electrode 163 through the contact hole 193. The auxiliary gate pad 202 and the auxiliary data pad 203 connected to the external driving circuit are formed on the gate pad 123 and the data pad 164, respectively.

A method of manufacturing such a liquid crystal display will be described in detail with reference to FIGS. 10A to 18B and FIGS. 7 to 9.

First, as shown in FIGS. 10A to 10B, gate wirings 121, 122, and 123 including a gate line 121, a gate electrode 122, and a gate pad 123 are formed on the substrate 110. .

As mentioned above, the gate wirings 121, 122, and 123 may be formed of a single layer, a double layer, or a triple layer, and when the pixel electrode 201 is formed of ITO when the double layer or the double layer is formed, the contact characteristics of the gate wirings 121, 122, 123 may be different. Good materials include Cr, Mo (molybdenum), Ti (titanium), Ta (tantalum), etc., so that it can be formed as a double layer of Cr and Al (or an Al alloy) or a double layer of Al and Mo. Here, a double layer of Cr layers 1211, 1221, 1231 and Al-Nd layers 1212, 1222, 1232 is formed.

Next, as shown in FIGS. 11A and 11B, the gate insulating layer 130, the semiconductor layer, and the ohmic contact layer are sequentially deposited, and then the ohmic contact layer and the semiconductor layer except for the upper portion of the gate electrode 122 are removed to remove the contact layer pattern. 153 and the semiconductor layer pattern 141 are formed.

Next, as illustrated in FIGS. 12A and 12B, a conductive material is deposited and etched to form data lines 161, 162, 163, and 164 and a storage electrode 165. The data wires 161, 162, 163, and 164 and the storage electrode 165 may be formed of a chemically stable conductive material such as Cr or Mo, and may be formed of a double layer of Al and Cr or Al-Nd and Cr or Al and Mo. It may also be formed, in this case Cr. At this time, the width of the data line 161 is formed to 15 ㎛ to 20 ㎛ to serve as a light blocking film.

Subsequently, the contact layer pattern 153 not covered with the data wires 161, 162, 163, and 164 and the storage electrode 165 is etched to separate the two portions 151 and 152, and at the same time, the semiconductor layer pattern ( 141).

Next, the passivation layer 170 is formed on the data lines 161, 162, 163, and 164 and the storage electrode 165 using silicon nitride or the like.

Next, as illustrated in FIGS. 13A, 13B, and 17, the color filter patterns 181, 182, and 183 are disposed on the passivation layer 170 of the pixel area defined by the gate line 121 and the data line 161 intersecting with each other. To form. In this case, the color filter patterns 181, 182, and 183 are formed in the same manner as in the first embodiment, which will be described with reference to FIGS. 14 to 17. 14 to 17 are cuts taken along the line XIV-XIV 'in FIG. 13A.

First, as illustrated in FIG. 14, a yellow photosensitive film 184 and a red photosensitive film 185 having positive photosensitivity are sequentially applied to cover the gate insulating film 130 and the data line 161, and then exposed to light. In the mask 410 corresponding to the area A ′ where both the layer 1811 and the red photosensitive layer 1812 will remain, a light shielding film 411 having a light transmittance of about 0% is formed, and only the yellow photosensitive layer 1821 is formed. A slit or translucent film 412 is formed in the mask 410 corresponding to the remaining B 'region so that light transmittance is 30% or less, and no film is formed in the mask 410 corresponding to the remaining region. This allows for nearly 100% transmission. In this case, the upper red photoresist 185 may be sensitive to photosensitivity, and the lower yellow photoresist 184 may be dull to increase the exposure selectivity of the two photoresist layers 184 and 185. Here, the two photoresist layers 184 and 185 may be applied by spin coating or roll coating, or may be formed in advance in a thin film to be transferred.

Next, as illustrated in FIG. 15, the photosensitive films 184 and 185 are developed to remove the exposed portions. Therefore, yellow photosensitive layers and red photosensitive layers 1811 and 1812 are formed in the A 'region, only the yellow photosensitive layer 1821 is formed in the B' region, and all of the remaining regions are removed.

Next, as shown in FIG. 16, the cyan photosensitive film 186 and the blue photosensitive film 187 having positive photosensitivity are coated and exposed, respectively, after which the cyan photosensitive layer 1831 and the blue photosensitive layer 1832 remain. A light shielding film 421 having a light transmittance of about 0% is formed in the mask 420 corresponding to the C ′ region to be formed, and light is provided in the mask 420 corresponding to the B ′ region in which only the cyan photosensitive layer 1822 remains. The slit or translucent film 422 is formed to have a transmittance of 30% or less, and a thin film is not formed in the mask 420 corresponding to the remaining area so that light is transmitted almost 100%. Here, the two photoresist films 186 and 187 may be applied by spin coating or roll coating, or may be previously manufactured in a thin film form and transferred to the substrate.

Next, as illustrated in FIG. 17, the blue photoresist 187 and the cyan photoresist 186 are developed to form a cyan photosensitive layer 1831 and a blue photosensitive layer 1832 in a region C ′, and a yellow photosensitive layer in a region B ′. The cyan photosensitive layer 1822 is formed on the 1821, and all other regions are removed. Thus, the color filter patterns 181, 182, and 183 are completed. In this case, the cyan photosensitive layer 1822 and the yellow photosensitive layer 1821 in the B 'region may be partially misaligned with the edge, and thus, the position where the misalignment does not deviate from the data line 161 may be prevented.

Therefore, a yellow photosensitive layer 1811 is formed at the lower portion of the A 'region, a red photosensitive layer 1812 is formed at the upper portion of the region A', and a yellow photosensitive layer 1821 is formed at the lower portion of the region B 'and a cyan photosensitive layer 1822 is formed at the upper portion of the region B'. In the C ′ region, a cyan photosensitive layer 1831 is formed at a lower portion thereof, and a blue photosensitive layer 1832 is formed at an upper portion thereof.

Next, as shown in FIGS. 18A and 18B, the organic insulating layer 190 is formed to a thickness of about 2 to 4 μm, and then the color filter patterns 181, 182, and 183, the protective layer 170, and the gate insulating layer 130 are formed. Patterning together to form the gate pad 123, the data pad 164, and the contact holes 191, 192, 193, and 194 exposing the drain electrode 163 and the storage electrode 165. At this time, the Al-Nd layer 1232, which is the upper layer of the gate pad 123, is also partially removed. The organic insulating layer 190 may be formed of a photosensitive organic material, and in this case, the organic insulating layer 190 may be patterned only by an exposure and development process through a mask.

7 to 9, a transparent conductive material such as ITO is deposited and then etched to form a pixel electrode 201, an auxiliary gate pad 202, and an auxiliary data pad 203. Here, the pixel electrode 201 may be formed to overlap the data line 161 to increase the aperture ratio, and even if the pixel electrode 201 and the data line 161 overlap, the organic insulating layer 190 is thick. There is little generation of parasitic capacitance between 201) and data line 161.

Meanwhile, in the present invention, the color filter patterns 181, 182, and 183 are formed on the thin film transistor including the gate electrode 121, the source electrode 162, and the drain electrode 163, but as shown in FIG. 19. The color filter pattern 281 formed of the double layers 2811 and 2812 may be formed under the transistor.

In the present invention, the color filter pattern is formed of a positive photosensitive material from which light is removed by exposing light from the upper part of the color filter pattern, but when the reverse part is exposed, the color filter pattern is formed of a negative photosensitive material. It may be.

As described above, in the present invention, the color filter pattern may be formed on the lower substrate to increase the aperture ratio, and the process is reduced because the color filter patterns for transmitting the red, green, and blue colors are respectively formed by two photolithography processes. In addition, since only the common electrode and the alignment film need to be formed on the upper substrate, the substrate of the upper substrate can be formed with a thin thickness and a low price, thereby reducing the manufacturing cost.

Meanwhile, in the present invention, the semiconductor layer pattern, the contact layer pattern, and the data line are formed by two photolithography processes, but the semiconductor layer pattern, the ohmic contact layer pattern, and the data line may be formed by one photolithography process. At this time, the semiconductor layer pattern, the ohmic contact layer pattern, and the data wiring have almost the same shape.

According to the present invention, since the color filter patterns for transmitting the red, green, and blue colors of the liquid crystal display, respectively, are formed by two photolithography processes using a complementary color filter, the number of processes can be reduced. In addition, since the color filter pattern is formed on the thin film transistor substrate to increase the aperture ratio, and only the common electrode and the alignment layer are formed on the other substrate, the thickness of the substrate may be reduced or the manufacturing cost may be reduced by using a material such as plastic.

Claims (37)

Applying a first photosensitive layer on a substrate on which first to third regions are sequentially arranged; Applying a second photosensitive layer on the first photosensitive layer, First exposing and developing the first and second photosensitive layers to form the first and second photosensitive layers in the first region, and to form only the first photosensitive layer in the second region; Applying a third photosensitive layer on the first to third regions, Applying a fourth photosensitive layer on the third photosensitive layer, Exposing and developing the third and fourth photosensitive layers to form the third and fourth photosensitive layers in the third region, and to form only the third photosensitive layer in the second region. Color filter manufacturing method comprising a. delete In claim 1, In the first exposure, a portion corresponding to the first region has a light transmittance of about 0%, and a portion corresponding to the second region has a light transmittance of 30% or less, except for the first and second regions. The part corresponding to the area | region uses the mask whose light transmittance is nearly 100%. In claim 3, In the second exposure, a portion corresponding to the third region has a light transmittance of about 0%, and a portion corresponding to the second region has a light transmittance of 30% or less, except for the second and third regions. The part corresponding to the area | region uses the mask whose light transmittance is nearly 100%. In claim 1, The first photosensitive layer is a yellow photosensitive layer, and the second photosensitive layer is a red photosensitive layer. In claim 5, And the third photosensitive layer is a cyan photosensitive layer, and the fourth photosensitive layer is a blue photosensitive layer. In claim 1, The first photosensitive layer is a cyan photosensitive layer, and the second photosensitive layer is a blue photosensitive layer manufacturing method. In claim 7, And the third photosensitive layer is a yellow photosensitive layer, and the fourth photosensitive layer is a red photosensitive layer. In claim 1, The second and the fourth photosensitive layer is a method of manufacturing a color filter made of a material having a greater photosensitive property than the first and the third photosensitive layer, respectively. In claim 1, The coating of the first to fourth photosensitive layer is a color filter manufacturing method using a spin coating method. In claim 1, The coating of the first to fourth photosensitive layer is a color filter manufacturing method using a roll coating method. In claim 1, The coating of the first to fourth photosensitive layers uses a method of manufacturing the photosensitive layer in the form of a thin film and transferring the same on the substrate. A black matrix having openings of the first to third regions sequentially arranged on the transparent substrate, A color filter pattern formed in the first to third regions and including first to fourth photosensitive layers having different light transmitting properties; An electrode formed on the color filter pattern and made of a transparent conductive material; In the first region, a lower first photosensitive layer and an upper second photosensitive layer are formed, and in the second region, a third photosensitive layer is formed at a lower portion thereof and a fourth photosensitive layer is formed at an upper portion thereof. The color filter substrate in which the 5th photosensitive layer is formed in the lower part and the 6th photosensitive layer is formed in the upper part. delete In claim 13, The first and third photosensitive layers are yellow photosensitive layers, the second photosensitive layer is a red photosensitive layer, the fourth and fifth photosensitive layers are a cyan photosensitive layer, and the sixth photosensitive layer is a blue photosensitive layer. In claim 13, Wherein the first and third photosensitive layers are a cyan photosensitive layer, the second photosensitive layer is a blue photosensitive layer, the fourth and fifth photosensitive layers are yellow photosensitive layers and the sixth photosensitive layer is a red photosensitive layer. Transparent substrate, A plurality of gate lines formed on the substrate, A plurality of data lines insulated from the gate line and crossing the gate line to form a pixel area; A thin film transistor comprising a gate electrode connected to the gate line, a source electrode connected to the data line, and a drain electrode separated from the source electrode, and receiving a scan signal from the gate line to switch an image signal from the data line; A color filter pattern having a double layer formed in the first to third regions sequentially arranged corresponding to the pixel region one by one, and having different light transmission properties; An insulating film formed on the color filter pattern; A pixel electrode formed on the insulating film Thin film transistor substrate comprising a. The method of claim 17, The color filter pattern is formed on the thin film transistor substrate. The method of claim 17, And the color filter pattern is formed under the thin film transistor. The method of claim 17, In the first region, a lower first photosensitive layer and an upper second photosensitive layer are formed, and in the second region, a third photosensitive layer is formed at a lower portion thereof and a fourth photosensitive layer is formed at an upper portion thereof. The thin film transistor substrate which has the 5th photosensitive layer in the lower part, and the 6th photosensitive layer in the upper part. The method of claim 20, The first and third photosensitive layers are yellow photosensitive layers, the second photosensitive layer is a red photosensitive layer, the fourth and fifth photosensitive layers are a cyan photosensitive layer, and the sixth photosensitive layer is a blue photosensitive layer. The method of claim 20, The first and third photosensitive layers are a cyan photosensitive layer, the second photosensitive layer is a blue photosensitive layer, the fourth and fifth photosensitive layers are yellow photosensitive layers, and the sixth photosensitive layer is a red photosensitive layer. The method of claim 17, The insulating film is a thin film transistor substrate made of an organic insulating material. The method of claim 17, And a storage electrode insulated from and overlapping the gate line, wherein the storage electrode is connected to the pixel electrode. Forming a plurality of gate lines on the substrate, Forming a plurality of data lines insulated from the gate lines and intersecting the gate lines to form a pixel area; Forming a color filter pattern including bilayers having different light transmission properties in first to third regions sequentially arranged corresponding to each of the pixel regions; Forming an insulating film on the color filter pattern; Forming a pixel electrode on the insulating layer Method of manufacturing a thin film transistor substrate comprising a. The method of claim 25, The forming of the color filter pattern may include a first photo etching step and a second photo etching step. The first photolithography may include applying a first photosensitive layer; Applying a second photosensitive layer on the first photosensitive layer, Exposing and developing the first and second photosensitive layers to form the first and second photosensitive layers in the first region, and forming only the first photosensitive layer in the second region, The second photolithography may include applying a third photosensitive layer; Applying a fourth photosensitive layer on the third photosensitive layer, Exposing and developing the third and fourth photosensitive layers, leaving the third and fourth photosensitive layers in the third region, and leaving only the third photosensitive layer in the second region. Method of manufacturing a thin film transistor substrate comprising a. The method of claim 26, In the exposure of the first photolithography step, a portion corresponding to the first region has a light transmittance of about 0%, a portion corresponding to the second region has a light transmittance of 30% or less, and the first and the second The part corresponding to the area | region except 2 area | regions is a manufacturing method of the thin-film transistor board | substrate using the mask whose light transmittance is nearly 100%. The method of claim 27, In the exposure of the second photolithography step, the portion corresponding to the third region has a light transmittance of about 0%, the portion corresponding to the second region has a light transmittance of 30% or less, and the second and second portions The part corresponding to the area | region except 3 area | regions uses the mask whose light transmittance is nearly 100%. The method of claim 26, The first photosensitive layer is a yellow photosensitive layer, and the second photosensitive layer is a red photosensitive layer. The method of claim 29, And the third photosensitive layer is a cyan photosensitive layer, and the fourth photosensitive layer is a blue photosensitive layer. The method of claim 26, And the first photosensitive layer is a cyan photosensitive layer, and the second photosensitive layer is a blue photosensitive layer. The method of claim 31, And the third photosensitive layer is a yellow photosensitive layer, and the fourth photosensitive layer is a red photosensitive layer. The method of claim 26, And the second and fourth photosensitive layers are each formed of a material having a property of having greater photosensitive property than the first and third photosensitive layers, respectively. The method of claim 26, The coating of the photosensitive layer is a method of manufacturing a thin film transistor substrate using a spin coating method. The method of claim 26, Coating of the photosensitive layer is a method of manufacturing a thin film transistor substrate using a roll coating method. The method of claim 26, The coating of the photosensitive layer is a method of manufacturing a thin film transistor substrate using a method of manufacturing the color filter in the form of a thin film and transferring it to the substrate. The method of claim 25, The insulating film is a method of manufacturing a thin film transistor substrate made of an organic insulating material.

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