KR100680420B1 - Method for forming metal line - Google Patents

Method for forming metal line Download PDF

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KR100680420B1
KR100680420B1 KR1020000037335A KR20000037335A KR100680420B1 KR 100680420 B1 KR100680420 B1 KR 100680420B1 KR 1020000037335 A KR1020000037335 A KR 1020000037335A KR 20000037335 A KR20000037335 A KR 20000037335A KR 100680420 B1 KR100680420 B1 KR 100680420B1
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gas
forming
metal wiring
etching
film
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KR20020002960A (en
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유재선
김정호
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주식회사 하이닉스반도체
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    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
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    • H01L21/3105—After-treatment
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    • H01L21/31105—Etching inorganic layers
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    • H01L21/3105—After-treatment
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    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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Abstract

본 발명은 금속 배선을 금속 배선 형성 방법에 관한 것으로, 금속 배선 형성용 금속층의 식각 공정으로 금속 배선을 형성할 경우 발생되는 금속층 스트레스 및 금속층 주위의 절연막 손상 또는 측벽 절연막과 탑 절연막간의 계면에서 발생되는 누설 전류를 방지하기 위하여, 다마신 공정을 이용한 금속 배선 형성 방법을 이용하되 금속 배선의 측벽 절연막과 탑 절연막이 동시에 형성되도록 함으로써, 금속 배선의 전기적 특성을 향상시킬 수 있도록 하는 발명에 관한 것이다. The present invention relates to a method for forming a metal wiring, the metal wiring stress caused when the metal wiring is formed by the etching process of the metal layer for forming the metal wiring and damage to the insulating film around the metal layer or at the interface between the sidewall insulating film and the top insulating film In order to prevent leakage current, a metal wiring forming method using a damascene process is used, but the sidewall insulating film and the top insulating film of the metal wiring are formed at the same time, thereby improving the electrical characteristics of the metal wiring.

Description

금속 배선 형성 방법{Method for forming metal line}Method for forming metal line

도 1a 내지 도 1c는 종래의 금속 배선 형성 방법을 나타낸 공정 단면도1A to 1C are cross-sectional views illustrating a conventional metal wiring forming method.

도 2a 내지 도 2g는 본 발명의 실시 예에 따른 금속 배선 형성 방법을 나타낸 공정 단면도2A to 2G are cross-sectional views illustrating a method of forming a metal wiring according to an embodiment of the present invention.

< 도면의 주요부분에 대한 부호의 설명 ><Description of Symbols for Major Parts of Drawings>

31: 절연 기판 32: 제 1 산화막31: insulating substrate 32: first oxide film

33: 제 1 질화막 34: 플러그층33: first nitride film 34: plug layer

35: 제 2 산화막 패턴 36: 감광막 패턴35: second oxide film pattern 36: photosensitive film pattern

38: 폴리머막 39: 금속 배선
40: 제 2 질화막38: polymer film 39: metal wiring
40: second nitride film

삭제delete

본 발명은 금속 배선 형성 방법에 관한 것으로, 특히 금속 배선을 증착 공정에 의해 형성하여 금속 배선의 전기적 특성을 향상시키는 금속 배선 형성 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal wiring forming method, and more particularly, to a metal wiring forming method for forming a metal wiring by a deposition process to improve electrical characteristics of the metal wiring.

종래의 금속 배선 형성 방법은 도 1a에서와 같이, 플러그층(14)을 갖으며 제 1 산화막(12)과 제 1 질화막(13)이 순차적으로 적층되어 형성된 절연 기판(11)을 마련한다.In the conventional metal wiring forming method, as shown in FIG. 1A, an insulating substrate 11 having a plug layer 14 and a first oxide film 12 and a first nitride film 13 formed by stacking sequentially is provided.

도 1b에서와 같이, 상기 절연 기판(11)상에 금속층, 제 2 산화막(16), 감광막(17)을 순차적으로 형성한 다음, 상기 감광막(17)을 금속 배선이 형성될 부위에만 남도록 선택적으로 노광 및 현상한다.As shown in FIG. 1B, a metal layer, a second oxide film 16, and a photosensitive film 17 are sequentially formed on the insulating substrate 11, and then the photosensitive film 17 is selectively left so as to remain only at a portion where the metal wiring is to be formed. Exposure and development.

그리고, 상기 선택적으로 노광 및 현상된 감광막(17)을 마스크로 상기 제 2 산화막(16)과 금속층을 선택 식각하여 금속 배선(15)을 형성한다.The metal oxide layer 15 is formed by selectively etching the second oxide layer 16 and the metal layer using the selectively exposed and developed photoresist layer 17 as a mask.

도 1c에서와 같이, 상기 감광막(17)을 제거하고, 상기 금속 배선(15)을 포함한 전면에 제 2 질화막을 형성하고, 상기 제 2 질화막을 에치백(Etch back)하여 상기 금속 배선(15) 양측의 절연 기판(11)상에 제 2 질화막 측벽(18)을 형성한다.
상술한 바와 같이, 금속 배선 형성용 금속층의 식각 공정으로 금속 배선을 형성할 경우 금속층에 스트레스가 가해지고, 금속층 하부의 절연막 기판에 손상이 가해질 수 있다. 또한, 측벽 절연막(제 2 질화막 측벽) 및 탑 절연막(제 2 산화막)간의 계면에서 누설 전류가 발생하는 문제가 있다. As shown in FIG. 1C, the photoresist film 17 is removed, a second nitride film is formed on the entire surface including the metal wire 15, and the second nitride film is etched back to etch the metal wire 15. The second nitride film sidewall 18 is formed on the insulating substrate 11 on both sides.
As described above, when the metal wiring is formed by the etching process of the metal layer for forming the metal wiring, stress may be applied to the metal layer, and damage may be applied to the insulating film substrate under the metal layer. In addition, there is a problem that leakage current occurs at an interface between the sidewall insulating film (second nitride film sidewall) and the top insulating film (second oxide film).

종래의 금속 배선 형성 방법은 배선 형성용 금속층의 식각 공정으로 금속 배선을 형성하기 때문에 금속층 스트레스(Stress) 및 금속층 또는 주위의 절연막 손상으로 금속 배선의 전기적 특성이 저하되는 문제점을 포함하고 있으며, 본 발명은 상기 문제점을 해결하기 위해 안출한 것으로 금속 배선을 다마신 공정을 이용한 증착 공정에 의해 형성하므로 금속 배선 식각공정에서 발생하는 충격을 감소시키고, 전기적 특성을 향상시키는 금속 배선 형성 방법을 제공하는 것을 그 목적으로 한다.Conventional metal wiring forming method includes a problem that the electrical properties of the metal wiring is degraded due to the metal layer stress (Stress) and damage to the metal layer or the surrounding insulating layer because the metal wiring is formed by the etching process of the metal layer for wiring formation, the present invention In order to solve the above problems, the metal wire is formed by a deposition process using a damascene process, thereby providing a method for forming a metal wire to reduce the impact generated in the metal wire etching process and improve electrical characteristics. The purpose.

삭제delete

본 발명의 금속 배선 형성 방법은 플러그층을 포함하는 절연 기판을 형성하는 단계와, 절연 기판상에 금속 배선을 정의하는 층간절연막패턴을 형성하는 단계와, 층간절연막패턴의 내벽에 더미층 측벽을 형성하는 단계와, 더미층 측벽의 내부에 금속 배선을 형성하는 단계와, 더미층 측벽을 제거하는 단계 및 금속 배선 및 층간절연막패턴 사이의 영역 및 금속 배선 상부에 절연막을 형성하는 단계를 포함하는 것을 특징으로 한다.The metal wiring forming method of the present invention comprises the steps of forming an insulating substrate including a plug layer, forming an interlayer insulating film pattern defining a metal wiring on the insulating substrate, and forming a dummy layer sidewall on an inner wall of the interlayer insulating film pattern. And forming a metal wiring inside the dummy layer sidewalls, removing the dummy layer sidewalls, and forming an insulating film over the metal wiring and the region between the metal wiring and the interlayer insulating film pattern. It is done.

상기와 같은 본 발명에 따른 금속 배선 형성 방법의 바람직한 실시 예를 첨부된 도면을 참조하여 상세히 설명하면 다음과 같다.When described in detail with reference to the accompanying drawings a preferred embodiment of the metal wiring forming method according to the present invention as follows.

도 2a 내지 도 2g는 본 발명의 실시 예에 따른 금속 배선 형성 방법을 나타낸 공정 단면도이다.2A to 2G are cross-sectional views illustrating a method of forming a metal wiring according to an embodiment of the present invention.

본 발명의 실시 예에 따른 금속 배선 형성 방법은 도 2a에서와 같이, 플러그층(34)을 갖으며 제 1 산화막(32)과 제 1 질화막(33)이 순차적으로 적층되어 형성된 절연 기판(31)을 마련한다.In the method of forming the metal wiring according to the embodiment of the present invention, as shown in FIG. 2A, the insulating substrate 31 has a plug layer 34 and is formed by sequentially stacking the first oxide film 32 and the first nitride film 33. To prepare.

여기서, 상기 제 1 질화막(33)을 SiN, SiON, Si-RICH SiON 및 Al2O3 중 하나로 형성하거나 혼합막으로 형성한다.Here, the first nitride film 33 is formed of one of SiN, SiON, Si-RICH SiON, and Al 2 O 3 or a mixed film.

도 2b에서와 같이, 상기 절연 기판(31)상에 제 2 산화막과 감광막을 순차적으로 형성한 다음, 상기 감광막을 금속 배선이 형성될 부위에만 제거되도록 선택적으로 노광 및 현상하여 금속 배선을 정의하는 감광막 패턴(36)을 형성한다. 다음에는, 감광막 패턴(36)을 마스크로한 식각 공정으로 제 2 산화막을 식각하여 금속 배선을 정의하는 제 2 산화막 패턴(35)을 형성한다. 여기서, 제 2 산화막 패턴(35)은 금속 배선 형성을 위한 층간절연막패턴으로 후속 공정에서 다마신 패턴으로 작용한다.As shown in FIG. 2B, a second oxide film and a photosensitive film are sequentially formed on the insulating substrate 31, and then the photosensitive film is selectively exposed and developed to be removed only at a portion where a metal wiring is to be formed, thereby defining a metal wiring. The pattern 36 is formed. Next, the second oxide film is etched by an etching process using the photosensitive film pattern 36 as a mask to form a second oxide film pattern 35 defining metal wires. Here, the second oxide film pattern 35 is an interlayer insulating film pattern for forming metal wirings and functions as a damascene pattern in a subsequent process.

이때, 상기 선택적으로 노광 및 현상된 감광막 패턴(36)을 마스크로한 상기 제 2 산화막 패턴(35) 형성 공정은 제 2 산화막 패턴(35)의 측벽이 수직의 식각 단면을 갖도록 CF4/O2/Ar 가스 또는 CHF3/O2/Ar 가스를 사용하여 제 1 식각한 후, 다량의 폴리머(Polymer)를 발생시키는 과탄소 함유 가스인 C2F6, C2F4, C3F6, C3F8, C4F6, C4F8, C5F8, C5F10 및 C2HF5 중 하나의 가스를 사용하여 제 2 식각하는 것이 바람직하다.In this case, in the process of forming the second oxide film pattern 35 using the selectively exposed and developed photosensitive film pattern 36 as a mask, CF 4 / O 2 is formed so that the sidewall of the second oxide film pattern 35 has a vertical etching cross section. C 2 F 6 , C 2 F 4 , C 3 F 6 , an overcarbon containing gas that generates a large amount of polymer after first etching using / Ar gas or CHF 3 / O 2 / Ar gas Preferably, the second etching is performed using one of C 3 F 8 , C 4 F 6 , C 4 F 8 , C 5 F 8 , C 5 F 10 and C 2 HF 5 .

여기서, 제 2 식각 공정 시, 다량의 폴리머를 발생시키는 과탄소 함유 가스에 식각 공정 윈도우(Window)를 증가시키고 재현성 있는 식각 공정을 확보하기 위하여 수소를 포함하는 가스인 CHF3, CH2F2, CH3F, CH2, CH4, C2H4 및 H2 등의 가스를 혼합하여 상기 제 2 산화막을 식각하는 것이 바람직하다.Here, in the second etching process, CHF 3 , CH 2 F 2 , which is a gas containing hydrogen in order to increase the etching process window and increase the reproducible etching process in an overcarbon-containing gas that generates a large amount of polymer. It is preferable to etch the second oxide film by mixing gases such as CH 3 F, CH 2 , CH 4 , C 2 H 4, and H 2 .

또한, 상기 제 2 산화막 패턴(35) 식각 공정 시, 상기 제 1 및 제 2 식각 가스에 플라즈마(Plasma) 안정 및 스퍼터링(Sputtering) 효과를 증가시켜 식각 멈춤 개선을 위하여 불활성 가스인 He, Ne, Ar 및 Ze 등의 가스를 혼합하여 수행하는 것이 바람직하다.In addition, during the etching process of the second oxide layer pattern 35, He, Ne, Ar, which is an inert gas, may be used to improve etching stop by increasing plasma stabilization and sputtering effects on the first and second etching gases. And a gas such as Ze is preferably mixed.

도 2c에서와 같이, 감광막 패턴(36)을 제거하고, 전면에 HBr, Cl2, BCl3 및 HI 등 가스로 발생된 플라즈마를 사용한 폴리머 발생 공정으로 제 2 산화막 패턴(35)의 측벽 및 그 상부에 더미(Dummy)층인 폴리머막(38)을 형성한다.As shown in FIG. 2C, the photoresist pattern 36 is removed, and a polymer generating process using plasma generated by gas such as HBr, Cl 2 , BCl 3, and HI on the front surface of the second oxide film pattern 35 and its upper portion is performed. A polymer film 38 which is a dummy layer is formed on the substrate.

여기서, 폴리머막(38)은 시브이디(Chemical Vapour Deposition : CVD) 방법으로 형성된 SiCH, SiOC, SiC 및 SiOF 등과 같은 로우(Low)-k인 유전막, CFX 폴리머계 로우(Low)-k인 유전막, 브이피디(Vapor Phase Decomposition : VPD) 방식으로 형성된 폴리머계 로우(Low)-k인 유전막 및 이들이 혼합된 유전막 중 선택된 어느 하나로 형성 할 수 있다.Here, the polymer film 38 is a low-k dielectric film such as SiCH, SiOC, SiC, and SiOF formed by a chemical vapor deposition (CVD) method, and a dielectric film of CF X polymer-based Low-k. The polymer layer may be formed of any one selected from a polymer low-k dielectric film formed by a VPD method and a dielectric film mixed therewith.

그리고, 폴리머막(38)을 폴리머 발생량을 증가시키고, 폴리머 구조를 유연하게 하여 제거가 용이하도록 CF4, CHF3, CH3F, CH2F2, C2F6, C2H2F4, C3F8, C4F6, C4F8, C5F8 및 CO 등 탄소기를 포함하는 가스를 첨가하거나 N2, NF3 및 NH3 등 질소기를 포함하는 가스를 첨가한 폴리머 발생 공정으로 형성한다.In addition, the polymer film 38 increases the amount of polymer generated, and the polymer structure is flexibly removed to facilitate removal. CF 4 , CHF 3 , CH 3 F, CH 2 F 2 , C 2 F 6 , C 2 H 2 F 4 , C 3 F 8 , C 4 F 6 , C 4 F 8 , C 5 F 8 and CO It is formed by a polymer generating step in which a gas containing an isocarbon group is added or a gas containing a nitrogen group such as N 2 , NF 3 and NH 3 is added.

도 2d에서와 같이, 폴리머막(38)을 O2 또는 N2 플라즈마로 에치백(Etch back)하여 상기 제 2 산화막 패턴(35)의 측면에 폴리머막(38)이 잔류하도록 한다.As shown in FIG. 2D, the polymer film 38 is etched back with O 2 or N 2 plasma so that the polymer film 38 remains on the side surface of the second oxide film pattern 35.

여기서, 폴리머막(38)은 SF6 및 SOx 계통의 가스를 사용하여 S-C 또는 S-C-H 계열의 폴리머를 유발하고 CHF3, CH3F, CF4, C2F6, C2H2F4, C3F8, C4F8 및 NF3 등의 가스를 첨가하여 식각하거나 He, Ne, Ar 및 Ze 등의 가스를 사용하여 식각 또는 상기 가스들을 혼합하여 식각할 수 있다.Here, the polymer film 38 causes the SC or SCH-based polymer to be used, using SF 6 and SOx gas, and CHF 3 , CH 3 F, CF 4 , C 2 F 6 , C 2 H 2 F 4 , C Etching may be performed by adding gases such as 3 F 8 , C 4 F 8, and NF 3 , or etching using a gas such as He, Ne, Ar, and Ze, or by mixing the above gases.

도 2e에서와 같이, 폴리머막(38)을 포함한 전면에 Ti/TiN, W, WSix 및 TiSix 중 하나의 금속층을 형성한 다음, 상기 금속층을 Cl2, BCl3, HBr, N2 및 O2 중 하나의 가스 또는 이들의 혼합 가스로 에치백하여 상기 제 2 산화막 패턴(35) 및 폴리머막(38) 내에 금속 배선(39)을 형성한다.As shown in FIG. 2E, one metal layer of Ti / TiN, W, WSix, and TiSix is formed on the entire surface including the polymer film 38, and then the metal layer is formed of Cl 2 , BCl 3 , HBr, N 2, and O 2 . The metal wiring 39 is formed in the second oxide film pattern 35 and the polymer film 38 by etching back with one gas or a mixture of these gases.

여기서, 금속 배선(39)은 금속층을 에치백하는 공정으로 형성하는 대신에 시엠피(Chemical Mechanical Polishing : CMP) 공정 또는 시이피(Chemically Enhanced Polishing : CEP) 공정으로 식각할 수 있다.Here, the metal wire 39 may be etched by a chemical mechanical polishing (CMP) process or a chemically enhanced polishing (CEP) process instead of forming the metal layer by the process of etching back the metal layer.

도 2f에서와 같이, 상기 폴리머막(38)을 O2, N2 및 Ar 중 하나의 가스 또는 혼합 플라즈마를 사용한 건식 식각 또는 ACT, 클린(Clean)-B, 비오이(Buffered Oxide Etcher : BOE) 및 피라나(Pirahna) 등을 이용한 습식 식각 공정으로 제거한다.As shown in FIG. 2F, the polymer film 38 may be subjected to dry etching or ACT, Clean-B, BOE (Buffered Oxide Etcher: BOE) using one of O 2 , N 2 and Ar, or a mixed plasma. It is removed by a wet etching process using Pirahna et al.

도 2g에서와 같이, 상기 금속 배선(39)을 포함한 전면에 제 2 질화막(40)을 형성한다.As shown in FIG. 2G, a second nitride film 40 is formed on the entire surface including the metal wire 39.

여기서, 제 2 질화막(40)은 SiN, SiON, Si-RICH SiON 및 Al2O3 중 하나로 형성하거나 이들의 혼합막으로 형성한다.Here, the second nitride film 40 is formed of one of SiN, SiON, Si-RICH SiON, and Al 2 O 3 or a mixed film thereof.

그리고, 상기 제 2 질화막(40)을 CF4/O2/Ar 가스 또는 CHF3/O2/Ar 가스로 에치백하여 상기 금속 배선(39) 표면상에 상기 제 2 질화막(40)을 잔존시킨다.Then, the second nitride film 40 is etched back with CF 4 / O 2 / Ar gas or CHF 3 / O 2 / Ar gas to leave the second nitride film 40 on the surface of the metal wiring 39. .

여기서, 상기 제 2 질화막(40)을 에치백 공정 대신에 CMP 공정 또는 CEP 공정으로 식각할 수 있다.The second nitride film 40 may be etched by a CMP process or a CEP process instead of an etch back process.

본 발명의 금속 배선 형성 방법은 금속 배선을 정의하는 다마신 패턴 내에 금속 배선 물질층을 증착하는 방식으로 형성하므로, 배선 형성용 금속층의 식각 공정으로 금속 배선을 형성할 경우 발생되는 금속층 스트레스 및 금속층 또는 주위의 절연막 손상을 방지하고 또한 더미층 측벽을 이용하여 금속 배선의 측벽 절연막과 탑 절연막을 동시에 형성하므로 측벽 절연막과 탑 절연막간의 계면에서 발생되는 누설 전류를 방지하여 금속 배선의 전기적 특성을 향상시키는 효과가 있다.Since the metal wiring forming method of the present invention is formed by depositing a metal wiring material layer in the damascene pattern defining the metal wiring, the metal layer stress and the metal layer generated when the metal wiring is formed by the etching process of the metal layer for wiring formation, or It prevents damage to the surrounding insulating film and simultaneously forms the sidewall insulating film and the top insulating film of the metal wiring using the dummy layer sidewall, thereby preventing the leakage current generated at the interface between the sidewall insulating film and the top insulating film, thereby improving the electrical characteristics of the metal wiring. There is.

Claims (15)

플러그층을 포함하는 절연 기판을 형성하는 단계;Forming an insulating substrate comprising a plug layer; 상기 절연 기판상에 금속 배선을 정의하는 층간절연막패턴을 형성하는 단계;Forming an interlayer insulating film pattern defining a metal wiring on the insulating substrate; 상기 층간절연막패턴의 내벽에 더미층 측벽을 형성하는 단계;Forming a dummy layer sidewall on an inner wall of the interlayer insulating film pattern; 상기 더미층 측벽의 내부에 금속 배선을 형성하는 단계;Forming metal wirings inside the dummy layer sidewalls; 상기 더미층 측벽을 제거하는 단계; 및Removing the dummy layer sidewalls; And 상기 금속 배선 및 층간절연막패턴 사이의 영역 및 금속 배선 상부에 절연막을 형성하는 단계를 포함하는 것을 특징으로 하는 금속 배선 형성 방법.Forming an insulating film on a region between the metal wiring and the interlayer insulating film pattern and on the metal wiring. 제 1 항에 있어서,The method of claim 1, 상기 층간절연막패턴을 산화막으로 형성함을 특징으로 하는 금속 배선 형성 방법.And forming the interlayer insulating film pattern from an oxide film. 제 2 항에 있어서,The method of claim 2, 상기 층간절연막패턴 형성 공정은 The interlayer insulating film pattern forming process 상기 산화막 상부에 금속 배선을 정의하는 감광막 패턴을 형성한 후 상기 감광막 패턴을 마스크로 상기 산화막을 식각하되, CF4/O2/Ar 가스 또는 CHF3/O2/Ar 가스를 사용하여 제 1 식각한 후, 과탄소 함유 가스인 C2F6, C2F4, C3F6, C3F8, C4F6, C4F8, C5F8, C5F10 및 C2HF5 로 이루어지는 군에서 임의로 선택되는 하나의 가스를 사용하여 제 2 식각함을 특징으로 하는 금속 배선 형성 방법.After forming a photoresist pattern defining a metal wiring on the oxide layer, the oxide film is etched using the photoresist pattern as a mask, and first etching is performed using CF 4 / O 2 / Ar gas or CHF 3 / O 2 / Ar gas. Afterwards, C 2 F 6 , C 2 F 4 , C 3 F 6 , C 3 F 8 , C 4 F 6 , C 4 F 8 , C 5 F 8 , C 5 F 10 and C 2 A method for forming a metal wiring, wherein the second etching is performed using one gas arbitrarily selected from the group consisting of HF 5 . 제 3 항에 있어서,The method of claim 3, wherein 상기 산화막을 CF4/O2/Ar 가스 또는 CHF3/O2/Ar 가스를 사용하여 제 1 식각한 후, 과탄소 함유 가스인 C2F6, C2F4, C3F6, C3F8, C4F6, C4F8, C5F8, C5F10 및 C2HF5 로 이루어지는 군에서 임의로 선택되는 하나의 가스에 수소를 포함하는 가스인 CHF3, CH2F2, CH3F, CH2, CH4, C2H4 및 H2 로 이루어지는 군에서 임의로 선택되는 가스를 혼합한 가스를 사용하여 제 2 식각함을 특징으로 하는 금속 배선 형성 방법.The oxide film is first etched using CF 4 / O 2 / Ar gas or CHF 3 / O 2 / Ar gas, and then C 2 F 6 , C 2 F 4 , C 3 F 6 , C, which is an overcarbon containing gas. 3 F 8 , C 4 F 6 , C 4 F 8 , C 5 F 8 , C 5 F 10 and C 2 HF 5 A gas containing hydrogen in one gas arbitrarily selected from the group CHF 3 , CH 2 A method for forming a metal wiring, characterized in that the second etching is performed using a gas mixed with a gas arbitrarily selected from the group consisting of F 2 , CH 3 F, CH 2 , CH 4 , C 2 H 4 and H 2 . 제 3 항 또는 제 4 항에 있어서,The method according to claim 3 or 4, 상기 산화막을 상기 제 1, 제 2 식각 가스에 He, Ne, Ar 및 Ze 로 이루어지는 군에서 임의로 선택되는 가스를 혼합하여 식각함을 특징으로 하는 금속 배선 형성 방법.And etching the oxide film by mixing a gas selected arbitrarily from the group consisting of He, Ne, Ar, and Ze into the first and second etching gases. 제 1 항에 있어서,The method of claim 1, 상기 더미층 측벽은 폴리머막 또는 SiCH, SiOC, SiC 및 SiOF 로 이루어지는 군에서 임의로 선택되는 로우-k인 유전막, CFX 폴리머계 로우-k인 유전막, VPD 방식으로 형성된 폴리머계 로우-k인 유전막 및 이들의 혼합 유전막중 선택된 어느 하나를 이용하여 형성함을 특징으로 하는 금속 배선 형성 방법.The dummy layer sidewall may be a polymer film or a low-k dielectric film arbitrarily selected from the group consisting of SiCH, SiOC, SiC, and SiOF, a CF X polymer-based low-k dielectric film, a polymer-based low-k dielectric film formed by a VPD method, and The metal wiring forming method characterized by forming using any one of these mixed dielectric films. 제 6 항에 있어서,The method of claim 6, 상기 폴리머막을 CF4, CHF3, CH3F, CH2F2, C2F6, C2H2F4, C3F8, C4F 6, C4F8, C5F8 및 CO 로 이루어지는 군에서 임의로 선택되는 탄소기를 포함하는 가스를 첨가하거나 N2, NF3 및 NH3 로 이루어지는 군에서 임의로 선택되는 질소기를 포함하는 가스를 첨가한 폴리머 발생 공정으로 형성함을 특징으로 하는 금속 배선 형성 방법.The polymer film was CF 4 , CHF 3 , CH 3 F, CH 2 F 2 , C 2 F 6 , C 2 H 2 F 4 , C 3 F 8 , C 4 F 6 , C 4 F 8 , C 5 F 8 and CO A metal wiring comprising the step of adding a gas containing a carbon group arbitrarily selected from the group consisting of or a polymer generating step of adding a gas containing a nitrogen group optionally selected from the group consisting of N 2 , NF 3 and NH 3 . Forming method. 제 6 항에 있어서,The method of claim 6, 상기 폴리머막을 O2 또는 N2 플라즈마로 또는 SF6 및 SOx 계통의 가스를 사용하여 S-C 또는 S-C-H 계열의 폴리머를 유발하고 CHF3, CH3F, CF4, C2F6, C2H2F4, C3F8, C4F8 및 NF3 로 이루어지는 군에서 임의로 선택되는 가스를 첨가하여 식각하거나 He, Ne, Ar 및 Ze 로 이루어지는 군에서 임의로 선택되는 가스를 사용하여 식각 또는 상기 가스들을 혼합 가스로 에치백하여 형성함을 특징으로 하는 금속 배선 형성 방법.The polymer film was used as an O 2 or N 2 plasma or a gas of SF 6 and SOx systems to induce SC or SCH-based polymers, and to CHF 3 , CH 3 F, CF 4 , C 2 F 6 , C 2 H 2 F 4 , C 3 F 8 , C 4 F 8 and NF 3 by adding a gas selected arbitrarily selected by etching or by using a gas arbitrarily selected from the group consisting of He, Ne, Ar and Ze A metal wiring forming method characterized by forming by etching back with a mixed gas. 제 1 항에 있어서,The method of claim 1, 상기 더미층 측벽을 제거하는 단계는 O2, N2 및 Ar 중 하나의 가스 또는 혼합 플라즈마를 사용한 건식 식각 또는 ACT, 클린-B, BOE 및 피라나로 이루어지는 군에서 임의로 선택되는 어느 하나를 이용한 습식 식각 공정으로 수행하는 것을 특징으로 하는 금속 배선 형성 방법.The step of removing the side wall of the dummy layer may be performed by dry etching using a gas or mixed plasma of one of O 2 , N 2 and Ar, or wet etching using any one selected from the group consisting of ACT, clean-B, BOE and pyrana. The metal wiring forming method characterized by the above-mentioned. 제 1 항에 있어서,The method of claim 1, 상기 금속 배선을 Ti/TiN, W, WSix 및 TiSix 로 이루어지는 군에서 임의로 선택되는 하나의 금속층을 형성한 다음, 상기 금속층을 Cl2, BCl3, HBr, N2 및 O2 로 이루어지는 군에서 임의로 선택되는 하나의 가스 또는 이들의 혼합 가스로 에치백하여 형성함을 특징으로 하는 금속 배선 형성 방법.The metal wiring is formed of one metal layer arbitrarily selected from the group consisting of Ti / TiN, W, WSix, and TiSix, and then the metal layer is arbitrarily selected from the group consisting of Cl 2 , BCl 3 , HBr, N 2, and O 2 . Forming by etching back with one gas or a mixed gas thereof to be formed. 제 10 항에 있어서,The method of claim 10, 상기 금속층을 에치백 공정 대신에 CMP 공정 또는 CEP 공정으로 식각하여 상기 금속 배선을 형성함을 특징으로 하는 금속 배선 형성 방법.And forming the metal wiring by etching the metal layer by a CMP process or a CEP process instead of an etch back process. 제 1 항에 있어서,The method of claim 1, 상기 절연막을 질화막으로 형성함을 특징으로 하는 금속 배선 형성 방법.And the insulating film is formed of a nitride film. 제 12 항에 있어서,The method of claim 12, 상기 질화막을 SiN, SiON, Si-RICH SiON 및 Al2O3 로 이루어지는 군에서 임의로 선택되는 하나로 형성하거나 이들의 혼합막으로 형성함을 특징으로 하는 금속 배선 형성 방법.And the nitride film is formed of one selected from the group consisting of SiN, SiON, Si-RICH SiON, and Al 2 O 3 or a mixed film thereof. 제 12 항에 있어서,The method of claim 12, 상기 질화막을 CF4/O2/Ar 가스 또는 CHF3/O2/Ar 가스로 에치백하여 상기 금속 배선의 표면상에 잔존시킴을 특징으로 하는 금속 배선 형성 방법.And etching the nitride film with CF 4 / O 2 / Ar gas or CHF 3 / O 2 / Ar gas to remain on the surface of the metal wiring. 제 12 항에 있어서,The method of claim 12, 상기 질화막을 에치백 공정 대신에 CMP 공정 또는 CEP 공정으로 식각하여 상기 금속 배선의 표면상에 잔존시킴을 특징으로 하는 금속 배선 형성 방법.And etching the nitride film by a CMP process or a CEP process instead of an etch back process to remain on the surface of the metal wiring.
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