KR100674764B1 - 집광 반사기를 이용하는 존 제어 방사 가열 시스템 - Google Patents

집광 반사기를 이용하는 존 제어 방사 가열 시스템 Download PDF

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Publication number
KR100674764B1
KR100674764B1 KR1020000066442A KR20000066442A KR100674764B1 KR 100674764 B1 KR100674764 B1 KR 100674764B1 KR 1020000066442 A KR1020000066442 A KR 1020000066442A KR 20000066442 A KR20000066442 A KR 20000066442A KR 100674764 B1 KR100674764 B1 KR 100674764B1
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South Korea
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temperature
controller
substrate
signal
set point
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Expired - Fee Related
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Korean (ko)
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KR20010051571A (ko
Inventor
키날드데이비드윌리엄
카르도소안드레길
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액셀리스 테크놀로지스, 인크.
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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24HEATING; RANGES; VENTILATING
    • F24DDOMESTIC- OR SPACE-HEATING SYSTEMS, e.g. CENTRAL HEATING SYSTEMS; DOMESTIC HOT-WATER SUPPLY SYSTEMS; ELEMENTS OR COMPONENTS THEREFOR
    • F24D9/00Central heating systems employing combinations of heat transfer fluids covered by two or more of groups F24D1/00 - F24D7/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602Temperature monitoring
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0436Apparatus for thermal treatment mainly by radiation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020000066442A 1999-11-09 2000-11-09 집광 반사기를 이용하는 존 제어 방사 가열 시스템 Expired - Fee Related KR100674764B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/436,681 US6259072B1 (en) 1999-11-09 1999-11-09 Zone controlled radiant heating system utilizing focused reflector
US09/436,681 1999-11-09
US9/436,681 1999-11-09

Publications (2)

Publication Number Publication Date
KR20010051571A KR20010051571A (ko) 2001-06-25
KR100674764B1 true KR100674764B1 (ko) 2007-01-25

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KR1020000066442A Expired - Fee Related KR100674764B1 (ko) 1999-11-09 2000-11-09 집광 반사기를 이용하는 존 제어 방사 가열 시스템

Country Status (5)

Country Link
US (1) US6259072B1 (https=)
EP (1) EP1100114A3 (https=)
JP (1) JP4868193B2 (https=)
KR (1) KR100674764B1 (https=)
TW (1) TW472291B (https=)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6333493B1 (en) * 1999-09-21 2001-12-25 Kabushiki Kaisha Toshiba Heat treating method and heat treating apparatus
JP4698807B2 (ja) * 2000-09-26 2011-06-08 東京エレクトロン株式会社 半導体基板熱処理装置
US6492625B1 (en) * 2000-09-27 2002-12-10 Emcore Corporation Apparatus and method for controlling temperature uniformity of substrates
US6761796B2 (en) * 2001-04-06 2004-07-13 Axcelis Technologies, Inc. Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing
KR100426274B1 (ko) * 2001-08-02 2004-04-08 피에스케이 주식회사 램프가열을 이용한 반도체 웨이퍼 애싱장치 및 방법
US20030029859A1 (en) * 2001-08-08 2003-02-13 Applied Materials, Inc. Lamphead for a rapid thermal processing chamber
KR20030065217A (ko) * 2002-01-31 2003-08-06 삼성전자주식회사 웨이퍼 척 및 이를 포함하는 웨이퍼 가공 장치
KR100481180B1 (ko) * 2002-09-10 2005-04-07 삼성전자주식회사 포토레지스트 제거방법
US6947665B2 (en) * 2003-02-10 2005-09-20 Axcelis Technologies, Inc. Radiant heating source with reflective cavity spanning at least two heating elements
WO2004103669A2 (en) * 2003-05-21 2004-12-02 Brown Machine, Llc. Closed loop oven control system and method
US8580076B2 (en) * 2003-05-22 2013-11-12 Lam Research Corporation Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
US20040235299A1 (en) * 2003-05-22 2004-11-25 Axcelis Technologies, Inc. Plasma ashing apparatus and endpoint detection process
US20080090309A1 (en) * 2003-10-27 2008-04-17 Ranish Joseph M Controlled annealing method
US7892357B2 (en) * 2004-01-12 2011-02-22 Axcelis Technologies, Inc. Gas distribution plate assembly for plasma reactors
US20050247266A1 (en) * 2004-05-04 2005-11-10 Patel Nital S Simultaneous control of deposition time and temperature of multi-zone furnaces
US8615886B1 (en) * 2004-05-06 2013-12-31 Winthrop D. Childers Shaving system with energy imparting device
US20050250346A1 (en) * 2004-05-06 2005-11-10 Applied Materials, Inc. Process and apparatus for post deposition treatment of low k dielectric materials
US7521653B2 (en) * 2004-08-03 2009-04-21 Exatec Llc Plasma arc coating system
JP2006073895A (ja) * 2004-09-03 2006-03-16 Canon Inc 冷却装置、露光装置及びデバイス製造方法
US20060251827A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. Tandem uv chamber for curing dielectric materials
US20060249175A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. High efficiency UV curing system
CN101389953B (zh) * 2006-02-28 2012-05-16 丰田自动车株式会社 用于配备有加热器的传感器的温度控制设备
US8450193B2 (en) * 2006-08-15 2013-05-28 Varian Semiconductor Equipment Associates, Inc. Techniques for temperature-controlled ion implantation
US7655933B2 (en) * 2006-08-15 2010-02-02 Varian Semiconductor Equipment Associates, Inc. Techniques for temperature-controlled ion implantation
WO2008144658A1 (en) * 2007-05-17 2008-11-27 Exatec, Llc Apparatus and method for depositing multiple coating materials in a common plasma coating zone
US7848840B2 (en) * 2008-01-04 2010-12-07 Applied Materials, Inc. Method of controlling process parameters for semiconductor manufacturing apparatus
US20090194024A1 (en) * 2008-01-31 2009-08-06 Applied Materials, Inc. Cvd apparatus
JP5169299B2 (ja) * 2008-02-22 2013-03-27 株式会社デンソー 半導体製造装置
JP5236591B2 (ja) * 2009-08-04 2013-07-17 株式会社アルバック プラズマ処理装置
US8548312B2 (en) * 2010-02-19 2013-10-01 Applied Materials, Inc. High efficiency high accuracy heater driver
US10504719B2 (en) 2012-04-25 2019-12-10 Applied Materials, Inc. Cooled reflective adapter plate for a deposition chamber
WO2015112969A1 (en) 2014-01-27 2015-07-30 Veeco Instruments. Inc. Wafer carrier having retention pockets with compound radii for chemical vapor deposition systems
US10067006B2 (en) 2014-06-19 2018-09-04 Elwha Llc Nanostructure sensors and sensing systems
KR101605717B1 (ko) 2014-07-16 2016-03-23 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US10763142B2 (en) 2015-06-22 2020-09-01 Lam Research Corporation System and method for determining field non-uniformities of a wafer processing chamber using a wafer processing parameter
US10386821B2 (en) 2015-06-22 2019-08-20 Lam Research Corporation Systems and methods for calibrating scalar field contribution values for a limited number of sensors including a temperature value of an electrostatic chuck and estimating temperature distribution profiles based on calibrated values
US9779974B2 (en) 2015-06-22 2017-10-03 Lam Research Corporation System and method for reducing temperature transition in an electrostatic chuck
US10381248B2 (en) * 2015-06-22 2019-08-13 Lam Research Corporation Auto-correction of electrostatic chuck temperature non-uniformity
JP2018531324A (ja) * 2015-10-09 2018-10-25 北京北方華創微電子装備有限公司Beijing Naura Microelectronics Equipment Co., Ltd. 加熱装置および加熱チャンバ
US9826574B2 (en) * 2015-10-28 2017-11-21 Watlow Electric Manufacturing Company Integrated heater and sensor system
JP6512089B2 (ja) * 2015-12-15 2019-05-15 東京エレクトロン株式会社 基板処理装置及び基板処理装置の調整方法
US11430639B2 (en) * 2018-12-13 2022-08-30 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Plasma processing system
US12369228B2 (en) 2020-08-12 2025-07-22 Watlow Electric Manufacturing Company Method and system for providing variable ramp-down control for an electric heater
CN115985754B (zh) * 2022-12-01 2026-01-09 中国原子能科学研究院 离子源

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0637009A (ja) * 1992-07-14 1994-02-10 Fujitsu Ltd アッシング装置
US5436172A (en) * 1991-05-20 1995-07-25 Texas Instruments Incorporated Real-time multi-zone semiconductor wafer temperature and process uniformity control system
KR970063482A (ko) * 1996-02-16 1997-09-12 시바타 쇼타로 반도체 제조장치의 기판 가열장치
KR19980018603A (ko) * 1996-08-07 1998-06-05 메지 제임스 제이 기판 가열 시스템

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61196515A (ja) * 1985-02-26 1986-08-30 Mitsubishi Electric Corp 帯域溶融型半導体製造装置
US4680451A (en) * 1985-07-29 1987-07-14 A. G. Associates Apparatus using high intensity CW lamps for improved heat treating of semiconductor wafers
US4640224A (en) * 1985-08-05 1987-02-03 Spectrum Cvd, Inc. CVD heat source
US4981815A (en) 1988-05-09 1991-01-01 Siemens Aktiengesellschaft Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors
US5155336A (en) * 1990-01-19 1992-10-13 Applied Materials, Inc. Rapid thermal heating apparatus and method
US5179677A (en) 1990-08-16 1993-01-12 Applied Materials, Inc. Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity
US5446825A (en) 1991-04-24 1995-08-29 Texas Instruments Incorporated High performance multi-zone illuminator module for semiconductor wafer processing
US5268989A (en) 1992-04-16 1993-12-07 Texas Instruments Incorporated Multi zone illuminator with embeded process control sensors and light interference elimination circuit
JP3195678B2 (ja) * 1993-01-22 2001-08-06 東京エレクトロン株式会社 エネルギー線加熱装置
US5418885A (en) * 1992-12-29 1995-05-23 North Carolina State University Three-zone rapid thermal processing system utilizing wafer edge heating means
US5561612A (en) * 1994-05-18 1996-10-01 Micron Technology, Inc. Control and 3-dimensional simulation model of temperature variations in a rapid thermal processing machine
JPH08167590A (ja) * 1994-12-13 1996-06-25 Dainippon Screen Mfg Co Ltd プラズマアッシング方法
US5551985A (en) * 1995-08-18 1996-09-03 Torrex Equipment Corporation Method and apparatus for cold wall chemical vapor deposition
EP1143035B1 (en) * 1996-05-21 2005-12-14 Applied Materials, Inc. Apparatus and method for controlling the temperature of a wall of a reaction chamber
US5788799A (en) * 1996-06-11 1998-08-04 Applied Materials, Inc. Apparatus and method for cleaning of semiconductor process chamber surfaces
US5937142A (en) * 1996-07-11 1999-08-10 Cvc Products, Inc. Multi-zone illuminator for rapid thermal processing
US6122440A (en) * 1999-01-27 2000-09-19 Regents Of The University Of Minnesota Optical heating device for rapid thermal processing (RTP) system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436172A (en) * 1991-05-20 1995-07-25 Texas Instruments Incorporated Real-time multi-zone semiconductor wafer temperature and process uniformity control system
JPH0637009A (ja) * 1992-07-14 1994-02-10 Fujitsu Ltd アッシング装置
KR970063482A (ko) * 1996-02-16 1997-09-12 시바타 쇼타로 반도체 제조장치의 기판 가열장치
KR19980018603A (ko) * 1996-08-07 1998-06-05 메지 제임스 제이 기판 가열 시스템

Also Published As

Publication number Publication date
US6259072B1 (en) 2001-07-10
KR20010051571A (ko) 2001-06-25
EP1100114A2 (en) 2001-05-16
JP4868193B2 (ja) 2012-02-01
EP1100114A3 (en) 2003-06-18
JP2001203195A (ja) 2001-07-27
TW472291B (en) 2002-01-11

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