KR100674476B1 - 가스라인용 블록히터 - Google Patents
가스라인용 블록히터 Download PDFInfo
- Publication number
- KR100674476B1 KR100674476B1 KR1020050035474A KR20050035474A KR100674476B1 KR 100674476 B1 KR100674476 B1 KR 100674476B1 KR 1020050035474 A KR1020050035474 A KR 1020050035474A KR 20050035474 A KR20050035474 A KR 20050035474A KR 100674476 B1 KR100674476 B1 KR 100674476B1
- Authority
- KR
- South Korea
- Prior art keywords
- gas line
- heater
- block
- gas
- heat
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
Description
Claims (4)
- 반도체 제조를 위해 일정온도로 증발되는 액체가스가 흐르는 가스라인(3);상기 가스라인(3)을 내장하도록 가스라인(3)에 부합하는 형상으로 제조되며, 무게를 경감시킴과 동시에 내식성 및 내마모성 증진을 위해 그 표면을 하드 아노다이징(hard anodizing)한 블록(5);상기 가스라인(3)에 대한 일정온도의 열 전달에 따른 가스라인(3)내 액체가스의 가열 증발을 위해 운모재질로 제조되어 20 ~ 250℃의 범위에서 온도조절되도록 블록(5)내에 블록(5)의 길이에 비례하여 배치된 히터(4); 및상기 블록(5)내 히터(4)의 발열온도를 20 ~ 250℃의 범위에서 조절하는 써모커플(6)로 구성된 것을 특징으로 하는 가스라인용 블록히터.
- 삭제
- 삭제
- 삭제
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050035474A KR100674476B1 (ko) | 2005-04-28 | 2005-04-28 | 가스라인용 블록히터 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050035474A KR100674476B1 (ko) | 2005-04-28 | 2005-04-28 | 가스라인용 블록히터 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060112824A KR20060112824A (ko) | 2006-11-02 |
KR100674476B1 true KR100674476B1 (ko) | 2007-01-30 |
Family
ID=37651273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050035474A KR100674476B1 (ko) | 2005-04-28 | 2005-04-28 | 가스라인용 블록히터 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100674476B1 (ko) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19980045852A (ko) * | 1996-12-11 | 1998-09-15 | 문정환 | 진공증착 장비의 웨이퍼 가열장치 |
KR19980067494U (ko) * | 1997-05-27 | 1998-12-05 | 문정환 | 반도체 장치 |
KR100205441B1 (ko) | 1995-12-05 | 1999-07-01 | 구본준 | 에픽텍셜층 성장장비 |
KR200208211Y1 (ko) * | 1995-12-26 | 2001-11-30 | 김영환 | 에칭장비의액화가스라인히팅장치 |
-
2005
- 2005-04-28 KR KR1020050035474A patent/KR100674476B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100205441B1 (ko) | 1995-12-05 | 1999-07-01 | 구본준 | 에픽텍셜층 성장장비 |
KR200208211Y1 (ko) * | 1995-12-26 | 2001-11-30 | 김영환 | 에칭장비의액화가스라인히팅장치 |
KR19980045852A (ko) * | 1996-12-11 | 1998-09-15 | 문정환 | 진공증착 장비의 웨이퍼 가열장치 |
KR19980067494U (ko) * | 1997-05-27 | 1998-12-05 | 문정환 | 반도체 장치 |
Also Published As
Publication number | Publication date |
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KR20060112824A (ko) | 2006-11-02 |
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