KR100673762B1 - Organic light emitting display and method for fabricating the same - Google Patents

Abstract

An organic light emitting display and a method for fabricating the same are provided to increase the capacitance of a storage capacitor by forming an additional capacitor by using overlapped regions between devices. An organic light emitting display includes a pixel unit including a plurality of pixels connected to a plurality of scanning lines(S[n]), data lines(D[m]), and power lines, a scanning driving unit that applies scanning signals to the scanning lines(S[n]), and a data driving unit that applies data signals to the data lines(D[m]). Each of the pixels includes at least one organic thin film transistor(M1,M2) and storage capacitor. One of first and second electrodes of the organic thin film transistors(M1,M2) is insulated from and overlapped over one terminal of the storage capacitor. Each of the pixels includes an organic light emitting diode connected between a first power source and a second power source, a first organic thin film transistor connected to the scanning lines(S[n]), the data lines(D[m]), and a first node, a storage capacitor connected between the first nodes and the second power source, and a second organic thin film transistor connected between the first node, the organic light emitting diode, and the second power source.

Description

Organic Light Emitting Display and Method for Fabricating the Same

1 is a layout diagram illustrating pixels of a general organic light emitting display device.

FIG. 2 is a cross-sectional view taken along the line AA ′ of FIG. 1.

3 is a diagram illustrating an organic light emitting display device according to an exemplary embodiment of the present invention.

4 is a circuit diagram illustrating an example of the pixels illustrated in FIG. 3.

FIG. 5 is a layout diagram illustrating pixels of FIG. 4.

FIG. 6 is an example of sectional drawing along the B-B 'line | wire shown in FIG.

FIG. 7 is another example of a cross-sectional view taken along the line BB ′ shown in FIG. 5.

<Explanation of symbols for the main parts of the drawings>

300: pixel portion 310: pixel

320: scan driver 330: data driver

601 and 701: substrates 610 and 710: data lines

620 and 720: first transistor 630 and 730: storage capacitor

640 and 740: second transistor 650 and 750: first wiring

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display device and a method of manufacturing the same, and more particularly, to an organic light emitting display device and a method of manufacturing the same, which can increase the capacity of a storage capacitor by effectively utilizing a pixel area.

Recently, various flat panel display devices having a lighter weight and a smaller volume than the cathode ray tube have been developed. In particular, a light emitting display device having excellent luminous efficiency, brightness, viewing angle, and fast response speed has been attracting attention.

Such light emitting displays include organic light emitting diodes using organic light emitting diodes (OLEDs) and inorganic light emitting diodes using inorganic light emitting diodes (LEDs). The organic light emitting diode includes an anode electrode, a cathode electrode, and an organic light emitting layer disposed between them and emitting light by a combination of electrons and holes. The inorganic light emitting diode, unlike the organic light emitting diode, includes an inorganic light emitting layer, for example, a light emitting layer made of a PN junction semiconductor.

1 is a layout diagram illustrating pixels of a general organic light emitting display device.

Referring to FIG. 1, scan lines S [n] are arranged in a row direction in a pixel portion on a substrate, and data lines D [m] and a first power line L1 are arranged in a column direction. The first and second transistors M1 and M2 and the storage capacitor Cst are located in a region partitioned by the scan line S [n], the data line D [m], and the first power supply line L1. And an organic light emitting diode (OLED).

Here, the first and second transistors M1 and M2, the storage capacitor Cst, and the organic light emitting diode OLED have their own regions in a predetermined portion of the pixel region. That is, the pixel area is divided into first and second transistors M1 and M2, a storage capacitor Cst, and an organic light emitting diode OLED area, and the first and second transistors M1 and M2 are stored. The capacitor Cst and the organic light emitting diode (OLED) regions do not overlap each other except for connections between the respective elements.

In more detail, the first transistor M1 is formed on one side of the pixel region adjacent to the scan line S [n] and the data line D [m]. For convenience of explanation, hereinafter, it will be assumed that the transistors M1 and M2 are P-type transistors. At this time, the gate electrode of the first transistor M1 is connected to the scan line S [n], and the first electrode is formed to be connected to the data line D [m]. Here, the first electrode is an electrode different from the second electrode. For example, if the first electrode is a source electrode, the second electrode is a drain electrode.

The second transistor M2 is formed on the other side of the pixel region adjacent to the first power line L1. In this case, the first electrode of the second transistor M2 is formed to be connected to the first power line L1.

The first terminal of the storage capacitor Cst is formed in a region between the first transistor M1 and the second transistor M2. In this case, one side of the first terminal is formed to partially overlap the second electrode of the first transistor M1, and the overlapped portion is formed to be energized with the second electrode of the first transistor M1. The first terminal of the storage capacitor Cst is also connected to the gate electrode of the second transistor M2. The second terminal of the storage capacitor Cst is connected to the first power supply line L1 and is formed to face the first terminal thereof.

The organic light emitting diode OLED is formed in the remaining pixel areas in which the first and second transistors M1 and M2 and the storage capacitor Cst are not formed. In this case, the anode of the organic light emitting diode OLED is formed to be connected to the second electrode of the second transistor M2. The cathode electrode of the organic light emitting diode OLED is formed to be connected to the second power source ELVSS.

In the above-described pixel, the storage capacitor Cst is formed in a region between the first transistor M1 and the second transistor M2. In general, when the capacity of the storage capacitor (Cst) is large, the pixels can be operated stably. Since the area of each pixel is limited, there is a space constraint to increase the capacity of the storage capacitor (Cst). In addition, when the first and second transistors M1 and M2 are formed of organic thin film transistors (OTFTs), the transistors occupy a larger area than the inorganic thin film transistors to form a storage capacitor Cst. There was not enough room for that.

FIG. 2 is a cross-sectional view taken along the line AA ′ of FIG. 1.

Referring to FIG. 2, a data line D [m] 210, a first transistor M1 220, a storage capacitor Cst 230, and a second transistor M2 are disposed on a substrate 201. 240 and the first power line L1 are formed. Here, except for a portion where the second electrode 224 of the first transistor M1 220 and the first terminal 231 of the storage capacitor Cst 230 are connected through the contact hole, each of the elements is mutually different. It is formed so as not to overlap.

Hereinafter, the data line D [m] 210, the first transistor M1 and 220, the storage capacitor Cst 230, the second transistor M2 240, and the first power line L1 are described below. The manufacturing process of 250 will be described in detail.

First, a first conductor such as a gate metal is deposited on the substrate 201 and then patterned. The first conductor formed in the region of the first transistor M1 220 among the patterned first conductors becomes the gate electrode 221 of the first transistor M1 220 and the storage capacitor Cst 230. The first conductor formed in the) region becomes the first terminal 231 of the storage capacitor (Cst) 230. The first conductor formed in the region of the second transistor M2 240 becomes the gate electrode 241 of the second transistor M2 240.

Thereafter, the gate electrode 221 of the first transistor M1 220, the first terminal 231 of the storage capacitor Cst 230, and the gate electrode 241 of the second transistor M2 240. A gate insulating film 222 is formed on the substrate. Here, a contact hole is formed in the gate insulating layer 222 formed on the first terminal 231 of the storage capacitor Cst 230 adjacent to the region of the first transistor M1 220.

Thereafter, the semiconductor layer 223 is formed by depositing and patterning a semiconductor material on the gate insulating layer 222 formed on the gate electrodes 221 and 241 of the first and second transistors M1 and M2 220 and 240. , 243).

Thereafter, a second conductor such as a source and a drain metal is deposited on the gate insulating layer 222 and the semiconductor layers 223 and 243, and then patterned. Among the patterned second conductors, the second conductor formed in the region of the data line D [m] 210 becomes the data line D [m] 210 and the region of the first transistor M1 210. The second conductors formed in the first transistors M1 and 210 become first and second electrodes 224. In this case, the data lines D [m] 210 and the first electrodes 224 of the first transistors M1 and 220 are connected to each other, and the second electrodes of the first transistors M1 and 220 are connected to each other. The 224 is formed to be connected to the first terminal 231 of the storage capacitor Cst 230 through the contact hole. The second conductor formed in the region of the storage capacitor Cst 230 becomes the second terminal 233 of the storage capacitor Cst 230, and is formed in the region of the second transistor M2 240. The second conductor becomes the first and second electrodes 244 of the second transistor M2 240, and the second conductor formed in the region of the first power line L1 250 includes the first power line ( L1) 250. Here, the first electrode 244 and the first power line L1 250 of the second transistor M2 240 are formed to be connected to each other.

In the above-described pixel, each element is formed in an independent area so as not to overlap with each other except a connection portion through a contact hole. In this case, an independent area between each element is secured, but the area occupied by the elements in the pixel increases by that amount. Also, when the transistors M1 and M2 220 and 240 are formed of organic thin film transistors (OTFTs), the area occupied by the transistors M1 and M2 220 and 240 becomes large, thereby limiting the pixel area. Cannot be used efficiently. In this case, the aperture ratio of the pixel may be reduced, or an area for forming the storage capacitor Cst 230 may not be sufficiently secured.

Accordingly, an object of the present invention is to provide an organic light emitting display device and a method of manufacturing the same, which can increase the capacity of a storage capacitor by efficiently utilizing a pixel area.

In order to achieve the above object, a first aspect of the present invention provides a pixel portion including a plurality of pixels connected to a plurality of scan lines, data lines, and power lines, a scan driver for applying scan signals to the scan lines, and the data lines. A data driver configured to apply a data signal to the pixel; each of the pixels includes at least one organic thin film transistor and a storage capacitor, and any one of the first electrode and the second electrode of the organic thin film transistor One terminal of the capacitor is insulated from each other and provided to overlap the organic light emitting display device.

Preferably, each of the pixels includes an organic light emitting diode connected between a first power supply and a second power supply, a first organic thin film transistor connected to the scan line, the data line, and a first node, the first node, and the A storage capacitor connected between a second power supply and a second organic thin film transistor connected between the first node, the organic light emitting diode, and the second power supply. A portion of the first terminal of the second organic thin film transistor and the first terminal of the storage capacitor overlap. The first organic thin film transistor and the second organic thin film transistor have a structure in which gate electrodes are different from each other with respect to a semiconductor layer. The organic thin film transistor is an N-type transistor including a semiconductor layer made of pentacene.

A second aspect of the present invention includes forming at least one organic thin film transistor and a storage capacitor in a pixel region on a substrate, wherein any one of the first electrode and the second electrode of the organic thin film transistor and the storage capacitor are formed. A method of manufacturing an organic light emitting display device in which one terminal of a capacitor is insulated and overlaps each other is provided.

The forming of the at least one organic thin film transistor and the storage capacitor may include depositing and patterning a first conductor on the substrate to form a gate electrode of the organic thin film transistor and a first terminal of the storage capacitor. Forming an insulating film on the gate electrode of the organic thin film transistor and the first terminal of the storage capacitor, and forming an organic semiconductor layer on the insulating film formed on the gate electrode of the organic thin film transistor. And depositing and patterning a second conductor on the organic semiconductor layer and the insulating layer to form first and second electrodes of the organic thin film transistor and second terminals of the storage capacitor. At least a portion of the first electrode of the organic thin film transistor is formed to be insulated from and overlap with at least a portion of the first terminal of the storage capacitor. Forming the at least one organic thin film transistor includes forming a first organic thin film transistor on the substrate and forming a second organic thin film transistor on the substrate, wherein the first organic thin film transistor is formed. The transistor and the second organic thin film transistor are formed so that the positions of the gate electrodes are different from each other with respect to the semiconductor layer. The forming of the first organic thin film transistor may include depositing and patterning a first conductor on the substrate to form first and second electrodes, and forming an organic semiconductor layer on the first and second electrodes. And forming an insulating film on the organic semiconductor layer, and depositing and patterning a second conductor on the insulating film to form a gate electrode. The forming of the second organic thin film transistor may include forming a gate electrode by depositing and patterning a first conductor on the substrate, forming an insulating film on the gate electrode, and forming an organic layer on the insulating film. Forming a semiconductor layer and depositing and patterning a second conductor on the organic semiconductor layer to form first and second electrodes. At least a portion of the first electrode of the second organic thin film transistor is formed to be insulated from and overlap with at least a portion of the first terminal of the storage capacitor.

Hereinafter, the present invention will be described in detail with reference to FIG. 3 to FIG. 7 with which preferred embodiments in which the present invention pertains can be easily implemented.

3 is a diagram illustrating an organic light emitting display device according to an exemplary embodiment of the present invention.

Referring to FIG. 3, the organic light emitting diode display according to the exemplary embodiment includes a pixel unit 300, a scan driver 320, and a data driver 330.

The pixel unit 300 includes a plurality of pixels 310 including an organic light emitting diode (OLED) (not shown), and each of the pixels 310 includes scan lines S [1] to S [n]. And a region partitioned by data lines D [1] to D [m]. The pixel unit 300 receives the first power source ELVDD and the second power source ELVSS from the outside. Each of the pixels 310 receives a scan signal, a data signal, a first power source ELVDD, and a second power source ELVSS to display an image. Here, the first and / or second power lines may be patterned in a line shape so as to be connected to the pixels 310 positioned in the same column or row, and may be formed between the pixels 310 or the entire pixel portion 300. It may be formed in.

The scan driver 320 generates a scan signal. The scan signals generated by the scan driver 320 are sequentially supplied to the scan lines S [1] through S [n].

The data driver 330 generates a data signal. The data signal generated by the data driver 330 is supplied to the data lines D [1] to D [m] so as to be synchronized with the scan signal, and transferred to each pixel 310.

4 is a circuit diagram illustrating an example of the pixels illustrated in FIG. 3. In FIG. 4, the transistors are formed of an organic thin film transistor (OTFT). Therefore, in FIG. 4, transistors are illustrated as an N-type.

Referring to FIG. 4, the pixels 310 illustrated in FIG. 3 are connected to the scan line S [n], the data line D, and the first wiring L1. Here, since the transistors M1 and M2 are N-types, the first wiring L1 is a power supply line supplied with the second power supply ELVSS.

Each pixel 310 includes first and second transistors M1 and M2, a storage capacitor Cst, and an organic light emitting diode OLED.

The gate electrode of the first transistor M1 is connected to the scan line S [n]. The first electrode of the first transistor M1 is connected to the data line D, and the second electrode is connected to the first node N1. Here, the first electrode and the second electrode are different electrodes. For example, if the first electrode is a drain electrode, the second electrode is a source electrode. The first transistor M1 is turned on when the scan signal (high-level) is supplied to the scan line S [n] to supply the data signal supplied to the data line D to the first node N1. Supply.

The gate electrode of the second transistor M2 is connected to the first node N1. The first electrode of the second transistor M2 is connected to the cathode of the organic light emitting diode OLED, and the second electrode is connected to the first wiring L1. The second transistor M2 is configured to pass through the organic light emitting diode OLED from the first power source ELVDD in response to a voltage supplied to its gate electrode (that is, a voltage supplied to the first node N1). The current flowing to the second power source ELVSS is controlled. Here, the first and second transistors M1 and M2 are formed of organic thin film transistors including an organic semiconductor material such as pentacene.

The first terminal of the storage capacitor Cst is connected to the first node N1, and the second terminal is connected to the first wiring L1. The storage capacitor Cst stores a voltage corresponding to the data signal supplied to the first node N1 when the scan signal is supplied to the scan line S [n], and maintains the stored voltage for one frame. .

The anode electrode of the organic light emitting diode OLED is connected to the first power supply ELVDD, and the cathode electrode is connected to the first electrode of the second transistor M2. The organic light emitting diode OLED includes an anode electrode, a cathode electrode, and an organic light emitting layer which is disposed between the organic light emitting diodes and emits light by a combination of electrons and holes. The organic light emitting diode OLED emits light with luminance corresponding to the current controlled by the second transistor M2.

The operation of the pixel 310 configured as described above will be described in detail. First, when a scan signal is supplied to the scan line S [n], the first transistor M1 is turned on. When the first transistor M1 is turned on, the data signal supplied to the data line D is supplied to the first node N1 via the first transistor M1. When the data signal is supplied to the first node N1, the storage capacitor Cst is charged with a voltage corresponding to the data signal. Then, the second transistor M2 corresponds to the voltage supplied to its gate electrode (that is, the voltage corresponding to the data signal) from the first power source ELVDD to the second power source via the organic light emitting diode OLED. ELVSS) to control the current flowing. Accordingly, the organic light emitting diode OLED generates light corresponding to the data signal.

FIG. 5 is a layout diagram illustrating pixels of FIG. 4.

Referring to FIG. 5, the scanning line S [n] is arranged in the row direction in the pixel portion 300 on the substrate, and the data line D [m] and the first wiring L1 are arranged in the column direction. . The pixel 310 is formed in a region partitioned by the main scan line S [n], the data line D [m], and the first wiring L1. The pixel 310 includes first and second transistors M1 and M2, a storage capacitor Cst, and an organic light emitting diode OLED.

Here, the first terminal of the storage capacitor (Cst) and the first electrode of the second transistor (M2) is formed so as to overlap and insulate each other like C. In this case, an additional capacitor is formed at the overlapped portion, which can be used as a storage capacitor Cst, thereby increasing the total capacity of the storage capacitor Cst.

In more detail, the first transistor M1 is formed on one side of the pixel region adjacent to the scan line S [n] and the data line D [m]. At this time, the gate electrode of the first transistor M1 is connected to the scan line S [n], and the first electrode is formed to be connected to the data line D [m].

The second transistor M2 is formed on the other side of the region of the pixel 310 adjacent to the first wiring L1. At this time, the second electrode of the second transistor M2 is formed to be connected to the first wiring L1. Here, the first and second transistors M1 and M2 are formed to include an organic semiconductor layer.

The first terminal of the storage capacitor Cst is formed in a region between the first transistor M1 and the second transistor M2. In this case, one side of the first terminal is formed to partially overlap the second electrode of the first transistor M1, and the overlapped portion is formed to be energized with the second electrode of the first transistor M1 through the contact hole. The first terminal of the storage capacitor Cst is also connected to the gate electrode of the second transistor M2. The second terminal of the storage capacitor Cst is connected to the first wiring L1 and formed to face the first terminal thereof.

The organic light emitting diode OLED is formed in the remaining pixel areas in which the first and second transistors M1 and M2 and the storage capacitor Cst are not formed. In this case, the anode electrode of the organic light emitting diode OLED is connected to the first power supply ELVDD, and the cathode electrode is formed to be connected to the first electrode of the second transistor M2.

In the above-described pixel, an additional capacitor is formed at a portion where the first terminal of the storage capacitor Cst and the first electrode of the second transistor M2 are insulated from each other, thereby increasing the capacity of the storage capacitor Cst. You can. In this case, the generated capacitor is formed in the limited pixel region without requiring additional space. Therefore, according to the exemplary embodiment of the present invention, the pixel can be stably driven by increasing the capacity of the storage capacitor Cst by efficiently utilizing the pixel area.

FIG. 6 is an example of sectional drawing along the B-B 'line | wire shown in FIG.

Referring to FIG. 6, a data line D [m] 610, a first transistor M1 620, a storage capacitor Cst 630, and a second transistor M2 are disposed on a substrate 601. 640 and the first wiring L1 650 are formed. Here, a part of the first terminal 631 of the storage capacitor (Cst) 630 and the first electrode 644 of the second transistor (M2) 640 are each other with the gate insulating layer 622 therebetween, like C. Insulated and formed to overlap.

Hereinafter, the data lines D [m] 610, the first transistors M1 and 620, the storage capacitors Cst 630, the second transistors M2 and 640, and the first wirings The manufacturing process of L1) 650 will be described in detail.

First, a first conductor such as a gate metal is deposited on the substrate 601 and then patterned. The first conductor formed in the region of the first transistor M1 620 among the patterned first conductors becomes the gate electrode 621 of the first transistor M1 620 and the storage capacitor Cst 630. The first conductor formed in the) region becomes the first terminal 631 of the storage capacitor (Cst) 630. The first conductor formed in the region of the second transistor M2 640 becomes the gate electrode 641 of the second transistor M2 640.

Thereafter, the gate electrode 621 of the first transistor M1 620, the first terminal 631 of the storage capacitor Cst 630, and the gate electrode 641 of the second transistor M2 640. A gate insulating film 622 is formed on it. The gate insulating film 622 is formed of an insulating material such as an oxide film or a nitride film. A contact hole is formed in the gate insulating layer 622 formed on the first terminal 631 of the storage capacitor Cst 630 adjacent to the region of the first transistor M1 620.

Thereafter, an organic semiconductor material such as pentacene is deposited on the gate electrodes 621 and 641 of the first and second transistors M1 and M2 620 and 640 and then patterned. Semiconductor layers 623 and 643 are formed. Here, by forming the semiconductor layers 623 and 643 with an organic material, low-temperature processing and low-cost mass production are possible, whereby a transistor can be formed on a substrate that is weak to heat such as plastic. That is, by forming the first and second transistors M1 and M2 620 and 640 as organic thin film transistors, the flexible display may be more easily implemented.

Thereafter, a second conductor such as a source and a drain metal is deposited on the gate insulating layer 622 and the semiconductor layers 623 and 643 and then patterned. Among the patterned second conductors, the second conductor formed in the data line region D [m] 610 becomes the data line D [m] 610 and the first transistor region M1 620. The second conductor formed in the first and second electrodes M624 and 620 becomes the first and second electrodes 624. In this case, the data lines D [m] 610 and the first electrodes 624 of the first transistors M1 and 620 are formed to be connected to each other, and the second electrodes of the first transistors M1 and 620 are connected to each other. The 624 is formed to be connected to the first terminal 631 of the storage capacitor Cst 630 through the contact hole. The second conductor formed in the storage capacitor (Cst) 630 region becomes the second terminal 633 of the storage capacitor (Cst) 630, and is formed in the second transistor (M2) 640 region. The second conductor becomes the first and second electrodes 644 of the second transistor M2 640, and the second conductor formed in the region of the first wiring L1 650 is the first wiring L1. (650). Here, the first electrode 644 of the second transistor M2 640 is formed to partially overlap the first terminal 631 of the storage capacitor Cst, as shown in C. FIG. The second electrode 644 of the second transistor M2 640 is formed to be connected to the first wiring L1 650.

In FIG. 6, the transistors M1 and M2 620 and 640 are all formed in a bottom-gate structure. However, the present invention is not limited thereto, and the transistors M1 and M2 620 and 640 may be formed. 640 may be formed in a top-gate structure.

Meanwhile, as illustrated in FIG. 7, the first transistor M1 720 and the second transistor M2 740 may be formed in different structures.

Referring to FIG. 7, the first transistor M1 720 formed to be connected to the data line D [m] 710 has a top electrode having a gate electrode 725 positioned over the semiconductor layer 722. It is formed into a gate structure. The first transistor M1 720 includes the first and second electrodes 721, the semiconductor layer 722, and the gate electrode 725.

The second transistor M2 740 formed to be connected to the first wiring L1 750 has a bottom-gate structure in which the gate electrode 741 is positioned under the semiconductor layer 743. The second transistor M2 740 also includes a gate electrode 741, a semiconductor layer 743, and first and second electrodes 744. The first and second transistors M1 and M2 720 and 740 are organic thin film transistors including organic semiconductor layers 722 and 743.

First and second terminals 731 and 733 of the storage capacitor Cst 730 are formed between the first transistor M1 720 and the second transistor M2 740. The first terminal 731 of the storage capacitor Cst 730 is formed to be connected to the second electrode 721 of the first transistor M1 720.

In this case, a portion of the first terminal 731 of the storage capacitor Cst 730 and the first electrode 744 of the second transistor M2 740 are insulated by the first insulating layer 723 as shown in C. , To overlap each other. In order to ensure the stability of the scan line S [n] and the first wiring L1 750, between the first insulating film 723 and the gate electrode 725 of the first transistor M1 720, A second insulating layer 724 is further formed on the storage capacitor Cst 730 and the second transistor M2 740.

Although the technical idea of the present invention has been described in detail according to the above preferred embodiment, it should be noted that the above-described embodiment is for the purpose of description and not of limitation. In addition, those skilled in the art will understand that various modifications are possible within the scope of the technical idea of the present invention.

As described above, according to the organic light emitting diode display and the method of manufacturing the same, an additional capacitor is generated by using overlapping portions between the devices, thereby efficiently utilizing the pixel area and increasing the capacity of the storage capacitor. Can be increased. For this reason, in this invention, a pixel can be driven stably. In addition, by forming the semiconductor layer of the transistors included in each pixel with an organic material, low-temperature processing and low-cost mass production are possible, thereby making it possible to form transistors on heat-sensitive substrates such as plastics, thereby making it easier to implement a flexible display. It can be done.

Claims (12)

A pixel portion including a plurality of pixels connected to a plurality of scan lines, data lines, and power lines; A scan driver which applies a scan signal to the scan line; And A data driver for applying a data signal to the data line; Each of the pixels includes at least one organic thin film transistor and a storage capacitor, and any one of the first electrode and the second electrode of the organic thin film transistor and one terminal of the storage capacitor are insulated from each other and overlap each other. Organic light emitting display. According to claim 1, Each of the pixels An organic light emitting diode connected between the first power supply and the second power supply; A first organic thin film transistor connected to the scan line, the data line and a first node; A storage capacitor connected between the first node and the second power source; And And a second organic thin film transistor connected between the first node, the organic light emitting diode, and the second power source. The method of claim 2, An organic light emitting display device in which a first electrode of the second organic thin film transistor overlaps with a portion of a first terminal of the storage capacitor. The method of claim 2, The first organic thin film transistor and the second organic thin film transistor have a structure in which gate electrodes are different from each other with respect to a semiconductor layer. According to claim 1, The organic thin film transistor is an N-type transistor including a semiconductor layer made of pentacene. Forming at least one organic thin film transistor and a storage capacitor in a pixel region on the substrate, And forming one of the first electrode and the second electrode of the organic thin film transistor so that one terminal of the storage capacitor is insulated and overlaps each other. The method of claim 6, Forming the at least one organic thin film transistor and the storage capacitor Depositing and patterning a first conductor on the substrate to form a gate electrode of the organic thin film transistor and a first terminal of the storage capacitor; Forming an insulating film on the gate electrode of the organic thin film transistor and the first terminal of the storage capacitor; Forming an organic semiconductor layer on the insulating layer formed on the gate electrode of the organic thin film transistor; And And depositing and patterning a second conductor on the organic semiconductor layer and the insulating layer to form first and second electrodes of the organic thin film transistor and second terminals of the storage capacitor. Manufacturing method. The method of claim 7, wherein And at least a portion of the first electrode of the organic thin film transistor is insulated from and overlapped with at least a portion of the first terminal of the storage capacitor. The method of claim 6, Forming the at least one organic thin film transistor Forming a first organic thin film transistor on the substrate; And Forming a second organic thin film transistor on the substrate; The first organic thin film transistor and the second organic thin film transistor are formed so that the positions of the gate electrodes are different from each other with respect to the semiconductor layer. The method of claim 9, Forming the first organic thin film transistor Depositing and patterning a first conductor on the substrate to form first and second electrodes; Forming an organic semiconductor layer on the first and second electrodes; Forming an insulating film on the organic semiconductor layer; And Forming a gate electrode by depositing and patterning a second conductor on the insulating layer; The method of claim 9, Forming the second organic thin film transistor Depositing and then patterning a first conductor on the substrate to form a gate electrode; Forming an insulating film on the gate electrode; Forming an organic semiconductor layer on the insulating film; And And depositing and patterning a second conductor on the organic semiconductor layer to form first and second electrodes. The method of claim 9, And at least a portion of the first electrode of the second organic thin film transistor is insulated from and overlapped with at least a portion of the first terminal of the storage capacitor.

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