KR100670095B1 - 스퍼터링 타깃용 냉각식 배면판 및 다수의 배면판들로구성되는 스퍼터링 타깃 - Google Patents
스퍼터링 타깃용 냉각식 배면판 및 다수의 배면판들로구성되는 스퍼터링 타깃 Download PDFInfo
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- KR100670095B1 KR100670095B1 KR1020040111687A KR20040111687A KR100670095B1 KR 100670095 B1 KR100670095 B1 KR 100670095B1 KR 1020040111687 A KR1020040111687 A KR 1020040111687A KR 20040111687 A KR20040111687 A KR 20040111687A KR 100670095 B1 KR100670095 B1 KR 100670095B1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
Abstract
Description
Claims (9)
- 앞면에 스퍼터링 물질을 부착하고, 뒷면에 배면판의 냉각장치를 구비하는 스퍼터링 타깃용 냉각식 배면판에 있어서, 배면판(2, 3, 4) 안에 냉각제 유입구와 냉각제 유출구 사이에 상기 배면판의 뒷면 쪽으로 개방된 최소 1개 이상의 홈(5)들이 형성되어 있고, 상기 홈(5)들은 배면판(2, 3, 4)의 외부프레임(6)에 의하여 둘러싸여 있으며, 상기 프레임(6)의 안쪽에는 그 프레임(6)으로부터 거리를 두고 최소 1개 이상의 브리지(7)들이 형성되어 있고, 각 브리지(7)는 2개의 홈(5)들 사이에서 홈(5)들을 서로 격리시켜 주는 역할을 하며, 상기 홈(5)들의 측면들을 서로 격리시켜 밀폐된 냉각관을 형성시키기 위하여, 상기 홈(5)들이 형성되어 있는 각 배면판(2, 3, 4)의 개방된 뒷면을 각각 하나의 폐쇄판(9)으로 폐쇄하도록 되어 있으며, 이때 폐쇄판(9)들은 상기 프레임(6) 및 브리지(7)들과 함께 용접하도록 되어있는 것을 특징으로 하는 스퍼터링 타깃용 냉각식 배면판.
- 제1항에 있어서, 상기 프레임(6)의 안쪽 가장자리는 상기 폐쇄판(9)을 결합하기 위하여 빙 둘러 숄더(shoulder)(8)가 형성되어 있으며, 그 숄더(8)의 높이는 상기 폐쇄판(9)의 두께와 일치하게 함으로써 상기 숄더(8) 위에 놓이는 폐쇄판(9)은 상기 숄더(8)를 형성하지 않은 프레임(6)의 표면부분과 가지런하게 연접되도록 하는 것을 특징으로 하는 배면판.
- 제1 또는 2항에 있어서, 상기 프레임(6)에는 뒷면 쪽으로 열려있는 적어도 2개 이상의 포켓(10)들이 형성되어 있고, 이 포켓(10)들은 상기 폐쇄판(9)에 의하여 덮여 있으며, 이때 상기 폐쇄판(9)에는 냉각제의 유입 및 유출을 위하여 상기 포켓(10)들 위쪽에 놓이는 구멍(12)들이 형성되어 있는 것을 특징으로 하는 배면판.
- 제3항에 있어서, 상기 포켓(10)들은 단부를 형성하지 않은 프레임(6) 표면부분에 형성되어 있고, 상기 폐쇄판(9)은 돌기부(11)들을 가지고 있으며, 그 돌기부(11)들은 상기 포켓(10) 위쪽에 위치하고, 그 돌기부(11)에는 냉각제의 유입 및 유출을 위한 구멍(12)들이 형성되어 있는 것을 특징으로 하는 배면판.
- 제1항에 있어서, 상기 배면판(2, 3, 4)들은 구형으로 형성되어 있고, 그 배면판(2, 3, 4)의 전면부는 주(主)프레임 부분에 대하여 전체 폭에 걸쳐 단부부위(端部部位)에 오목한 부분(recess)을 형성하는 것을 특징으로 하는 배면판.
- 제5항에 있어서, 상기 깊게 형성된 단부부위의 가장자리에 U-자형 충전판(17)을 삽입하며, 이때 상기 충전판(17)의 두께는 상기 단부부위의 높이와 일치하는 것을 특징으로 하는 배면판.
- 제1항의 다수의 배면판들로 이루어지는 스퍼터링 타깃에 있어서, 상기 배면판들은 이들의 전단면이 서로 맞대어 연접하도록 되어있고, 지지판(20)의 지지 브리지들 위에 부착/고정될 수 있으며, 이때 상기 배면판(2, 3, 4)들의 서로 맞대는 전단면(前端面)에 대응하는 단부(段部)(18, 18')들로 구비하는 것을 특징으로 하는 스퍼터링 타깃.
- 지지판(20)에는 냉각제 유입 및 유출구와 가지런하게 장치된 냉각제 통로구멍(21)이 형성되어 있으며, 냉각제 통로구멍(21)과 냉각제 유입 및 유출구 사이의 이행(移行 ; transitions)이 밀봉에 의해 차단되어 있는 상기 지지판(20) 위에 장착된 배면판(2, 3, 4)에 있어서, 각 밀봉장치는 반경방향으로 간격을 띄우고 장치된 2개의 밀봉링(22, 23)들로 구성되어 있고, 상기 2개의 밀봉링(22, 23)들 사이에는 하나의 환상공간(24)이 형성되며, 이 환상공간(24)은 환기공(25)을 통하여 상기 배면판(2, 3, 4)으로부터 반대편에 위치하는 상기 지지판 뒷면의 대기(大氣)와 연통하는 것을 특징으로 하는 배면판(2, 3, 4).
- 제8항에 있어서, 상기 밀봉링(22, 23)들은 상기 배면판(2, 3, 4)쪽으로 면한 상기 지지판(20)의 표면에 장치되는 것을 특징으로 하는 지지판 위에 장착된 배면판.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04027573A EP1659193A1 (de) | 2004-11-19 | 2004-11-19 | Gekühlte Rückenplatte für ein Sputtertarget und Sputtertarget bestehend aus mehreren Rückenplatten |
EP04027573.7 | 2004-11-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060056213A KR20060056213A (ko) | 2006-05-24 |
KR100670095B1 true KR100670095B1 (ko) | 2007-01-16 |
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KR1020040111687A KR100670095B1 (ko) | 2004-11-19 | 2004-12-24 | 스퍼터링 타깃용 냉각식 배면판 및 다수의 배면판들로구성되는 스퍼터링 타깃 |
Country Status (7)
Country | Link |
---|---|
US (2) | US20060108217A1 (ko) |
EP (2) | EP1903123B1 (ko) |
JP (2) | JP2006144111A (ko) |
KR (1) | KR100670095B1 (ko) |
CN (2) | CN101353780B (ko) |
AT (1) | ATE546561T1 (ko) |
TW (1) | TWI286161B (ko) |
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US7297247B2 (en) * | 2003-05-06 | 2007-11-20 | Applied Materials, Inc. | Electroformed sputtering target |
US7910218B2 (en) | 2003-10-22 | 2011-03-22 | Applied Materials, Inc. | Cleaning and refurbishing chamber components having metal coatings |
US7670436B2 (en) | 2004-11-03 | 2010-03-02 | Applied Materials, Inc. | Support ring assembly |
EP1903123B1 (de) | 2004-11-19 | 2012-02-22 | Applied Materials GmbH & Co. KG | Trägerplatte mit einer darauf aufgesetzten gekühlten Rückenplatte |
US8617672B2 (en) | 2005-07-13 | 2013-12-31 | Applied Materials, Inc. | Localized surface annealing of components for substrate processing chambers |
US7762114B2 (en) | 2005-09-09 | 2010-07-27 | Applied Materials, Inc. | Flow-formed chamber component having a textured surface |
US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
US20070125646A1 (en) * | 2005-11-25 | 2007-06-07 | Applied Materials, Inc. | Sputtering target for titanium sputtering chamber |
US20070283884A1 (en) * | 2006-05-30 | 2007-12-13 | Applied Materials, Inc. | Ring assembly for substrate processing chamber |
US7981262B2 (en) * | 2007-01-29 | 2011-07-19 | Applied Materials, Inc. | Process kit for substrate processing chamber |
US7942969B2 (en) | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
US8968536B2 (en) | 2007-06-18 | 2015-03-03 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
US7901552B2 (en) * | 2007-10-05 | 2011-03-08 | Applied Materials, Inc. | Sputtering target with grooves and intersecting channels |
CN102234776A (zh) * | 2010-04-22 | 2011-11-09 | 鸿富锦精密工业(深圳)有限公司 | 磁控溅镀装置 |
US9869392B2 (en) | 2011-10-20 | 2018-01-16 | Lam Research Corporation | Edge seal for lower electrode assembly |
US9859142B2 (en) | 2011-10-20 | 2018-01-02 | Lam Research Corporation | Edge seal for lower electrode assembly |
US20140061039A1 (en) * | 2012-09-05 | 2014-03-06 | Applied Materials, Inc. | Target cooling for physical vapor deposition (pvd) processing systems |
CN103785961B (zh) * | 2012-11-01 | 2016-08-03 | 宁波江丰电子材料股份有限公司 | 背板的制作方法及背板 |
CN103981495A (zh) * | 2013-02-07 | 2014-08-13 | 余姚康富特电子材料有限公司 | 靶材组件及其制备方法 |
DE102013216303A1 (de) * | 2013-08-16 | 2015-02-19 | Heraeus Materials Technology Gmbh & Co. Kg | Sputtertarget, Vorrichtung zum Befestigen eines Sputtertargets, Verfahren zum Erkennen des Lösens eines Sputtermaterials sowie Herstellungsverfahren |
CN104419900B (zh) * | 2013-08-26 | 2017-05-31 | 宁波江丰电子材料股份有限公司 | 溅射靶材及其制作方法 |
US10090211B2 (en) * | 2013-12-26 | 2018-10-02 | Lam Research Corporation | Edge seal for lower electrode assembly |
CN104741776B (zh) * | 2013-12-31 | 2016-07-06 | 宁波江丰电子材料股份有限公司 | 靶材组件的焊接方法 |
KR102470438B1 (ko) * | 2020-09-28 | 2022-11-25 | 파인원 주식회사 | 개조된 일체형 백킹 플레이트 제조 방법 |
CN112899627B (zh) * | 2021-01-16 | 2022-09-27 | 重庆电子工程职业学院 | 一种靶材安装结构、磁控溅射设备及磁控溅射方法 |
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-
2004
- 2004-11-19 EP EP07024025A patent/EP1903123B1/de active Active
- 2004-11-19 AT AT07024025T patent/ATE546561T1/de active
- 2004-11-19 EP EP04027573A patent/EP1659193A1/de not_active Withdrawn
- 2004-12-15 TW TW093138858A patent/TWI286161B/zh active
- 2004-12-22 JP JP2004371863A patent/JP2006144111A/ja active Pending
- 2004-12-24 KR KR1020040111687A patent/KR100670095B1/ko active IP Right Grant
-
2005
- 2005-01-11 CN CN2008102142181A patent/CN101353780B/zh active Active
- 2005-01-11 CN CNB2005100037825A patent/CN100471988C/zh active Active
- 2005-02-28 US US11/068,538 patent/US20060108217A1/en not_active Abandoned
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2008
- 2008-04-24 JP JP2008113769A patent/JP5032384B2/ja active Active
- 2008-11-25 US US12/323,287 patent/US7959776B2/en active Active
Also Published As
Publication number | Publication date |
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JP2006144111A (ja) | 2006-06-08 |
CN1776002A (zh) | 2006-05-24 |
EP1903123B1 (de) | 2012-02-22 |
CN100471988C (zh) | 2009-03-25 |
US20090134019A1 (en) | 2009-05-28 |
US20060108217A1 (en) | 2006-05-25 |
TW200617191A (en) | 2006-06-01 |
CN101353780A (zh) | 2009-01-28 |
US7959776B2 (en) | 2011-06-14 |
EP1659193A1 (de) | 2006-05-24 |
JP2008190047A (ja) | 2008-08-21 |
CN101353780B (zh) | 2011-06-15 |
TWI286161B (en) | 2007-09-01 |
JP5032384B2 (ja) | 2012-09-26 |
EP1903123A3 (de) | 2008-07-09 |
KR20060056213A (ko) | 2006-05-24 |
ATE546561T1 (de) | 2012-03-15 |
EP1903123A2 (de) | 2008-03-26 |
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