KR100669739B1 - 평판표시장치의 트랩제거방법 - Google Patents
평판표시장치의 트랩제거방법 Download PDFInfo
- Publication number
- KR100669739B1 KR100669739B1 KR1020040083978A KR20040083978A KR100669739B1 KR 100669739 B1 KR100669739 B1 KR 100669739B1 KR 1020040083978 A KR1020040083978 A KR 1020040083978A KR 20040083978 A KR20040083978 A KR 20040083978A KR 100669739 B1 KR100669739 B1 KR 100669739B1
- Authority
- KR
- South Korea
- Prior art keywords
- trap
- voltage
- flat panel
- panel display
- display device
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000010409 thin film Substances 0.000 claims abstract description 20
- 239000010408 film Substances 0.000 claims description 17
- 238000001926 trapping method Methods 0.000 claims 1
- 230000032683 aging Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
Description
Claims (6)
- 복수 개의 화소 및 상기 각 화소에 구비된 적어도 하나의 박막 트랜지스터를 구비하는 평판표시장치에 존재하는 트랩(Trap)을 제거하는 평판표시장치의 트랩제거방법에 있어서,상기 화소들의 박막 트랜지스터의 게이트에 DC(Direct current) 전압 또는 AC(Alternative Current) 전압의 역 바이어스를 상온(24 ℃) 및 100℃ 사이의 온도에서 적어도 10초 이상 인가하는 평판표시장치의 트랩제거방법.
- 제1항에 있어서, 상기 역 바이어스는,박막 트랜지스터의 게이트에 인가되는 정상적인 바이어스에 대하여 반대의 극성을 가지는 바이어스 전압인 것을 특징으로 하는 평판표시장치의 트랩제거방법.
- 제2항에 있어서, 상기 역 바이어스는,AC 전압인 경우, 펄스의 크기가 30V(Volts) 이하, 주파수는 60Hz(Hertz)이상 및 듀티(Duty)는 1/2에서 1/4 사이이고,DC 전압인 경우 30V 이하의 전압인 것을 특징으로 하는 평판표시장치의 트랩제거방법.
- 삭제
- 삭제
- 제1항에 있어서, 상기 트랩은,게이트 절연막 및 액티브 영역사이에 존재하거나 게이트 절연막 자체에 존재하는 트랩인 것을 특징으로 하는 평판표시장치의 트랩제거방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040083978A KR100669739B1 (ko) | 2004-10-20 | 2004-10-20 | 평판표시장치의 트랩제거방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040083978A KR100669739B1 (ko) | 2004-10-20 | 2004-10-20 | 평판표시장치의 트랩제거방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060034933A KR20060034933A (ko) | 2006-04-26 |
KR100669739B1 true KR100669739B1 (ko) | 2007-01-16 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020040083978A KR100669739B1 (ko) | 2004-10-20 | 2004-10-20 | 평판표시장치의 트랩제거방법 |
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KR (1) | KR100669739B1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102562978B1 (ko) * | 2018-12-31 | 2023-08-02 | 엘지디스플레이 주식회사 | 유기발광 다이오드 표시장치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0289030A (ja) * | 1988-09-26 | 1990-03-29 | Fujitsu Ltd | 薄膜トランジスタマトリクス |
JP2002111000A (ja) | 2000-09-29 | 2002-04-12 | Toshiba Corp | 薄膜トランジスタ、オフ電流制御装置及び液晶表示装置 |
KR20050070342A (ko) * | 2003-12-30 | 2005-07-07 | 엘지.필립스 엘시디 주식회사 | 일렉트로-루미네센스 표시장치와 그의 구동방법 |
KR20050110823A (ko) * | 2004-05-19 | 2005-11-24 | 삼성전자주식회사 | 유기발광소자의 구동소자 및 구동방법과, 이를 갖는표시패널 및 표시장치 |
-
2004
- 2004-10-20 KR KR1020040083978A patent/KR100669739B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0289030A (ja) * | 1988-09-26 | 1990-03-29 | Fujitsu Ltd | 薄膜トランジスタマトリクス |
JP2002111000A (ja) | 2000-09-29 | 2002-04-12 | Toshiba Corp | 薄膜トランジスタ、オフ電流制御装置及び液晶表示装置 |
KR20050070342A (ko) * | 2003-12-30 | 2005-07-07 | 엘지.필립스 엘시디 주식회사 | 일렉트로-루미네센스 표시장치와 그의 구동방법 |
KR20050110823A (ko) * | 2004-05-19 | 2005-11-24 | 삼성전자주식회사 | 유기발광소자의 구동소자 및 구동방법과, 이를 갖는표시패널 및 표시장치 |
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KR20060034933A (ko) | 2006-04-26 |
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