KR100640204B1 - Method for a selective recycling of tft-lcd glass substrate using chemicals reaction dip bath type - Google Patents

Abstract

A method for selectively recycling a glass substrate of a TFT-LCD is provided to effectively reproduce the glass substrate by selectively removing the deposited layers formed on the glass substrate through a chemical reaction dip bath type. A visible test is performed on a glass substrate before work(S100). The glass substrate is immersed in a strong acid-based chemical or a strong alkali-based chemical within a bath, thereby removing a column spacer layer through chemical reaction(S110). An after-treatment process is performed on the glass substrate where the column spacer is removed(S120). An ITO layer, an overcoat layer, a color filter layer, and a black matrix layer are sequentially removed from the glass substrate by performing processes like the chemical reaction and after-treatment.

Description

METHODS FOR A SELECTIVE RECYCLING OF TFT-LCD GLASS SUBSTRATE USING CHEMICALS REACTION DIP BATH TYPE}

1 is a flowchart illustrating a regeneration method of a thin film liquid crystal display glass substrate according to the present invention;

2 is a flowchart illustrating a post-processing process applied to FIG. 1;

3 to 7 are cross-sectional views of a thin film liquid crystal display glass substrate reproduced according to the present invention;

8 to 13 are another embodiment of a cross-sectional view of a thin film liquid crystal display glass substrate reproduced according to the present invention.

*** Explanation of symbols on main parts of drawing ***

10: glass substrate 20: chrome black matrix layer

30: R.G.B. layer 40: overcoat layer

50: ITO film formation layer 60: column space (COLUMN SPACE) layer

The present invention relates to a method for selectively regenerating a glass substrate of a thin film liquid crystal display using a chemical reaction deep bath method.

More specifically, the thin film liquid crystal display glass substrates can be recycled by sequentially removing the films stacked on the top and back surfaces of the TFT-LCD glass substrate, which are defective, by using a chemical dip bath method. The present invention relates to a selective regeneration method of a thin film liquid crystal display glass substrate using a chemical reaction deep bath method.

The structure of the TFT-LCD is composed of a glass lower plate on which a thin film transistor and a conductive film are formed, a glass upper plate on which a color filter is formed, a liquid crystal material incorporated between the upper and lower plates, and a light source located under the lower plate.

In the process of forming a color filter on a TFT-LCD panel, there is a method of employing a black matrix of an organic material in addition to a method of forming a black matrix using a thin film of a metal oxide such as chromium oxide.

The color filter forming process using the organic material black matrix is similar to the metal color filter method, and forms a black matrix film and forms a pattern into which the fluorescent agent can enter using a photoresist, and then, a phosphor layer is applied and the fluorescent agent is formed thereon. It is used as a method of applying overcoats to protect the film, and since the raw material cost of the glass substrate occupies a large part of the panel manufacturing cost, the defective top plate generated in the color filter forming process is recycled rather than discarded to reduce the TFT-LCD manufacturing cost. It is an important factor.

In addition, due to the ultimate environmental problems, defective glass substrates that cannot be regenerated are treated as specific wastes and disposed of in landfills, which will act as enormous factors for environmental pollution in the future.

The conventional method of regenerating LCD glass substrates involves depositing a cassette loaded with a plurality of defective glass substrates in a swelling bath containing a cleaning liquid, and continuously circulating the cleaning liquid contained in the swelling bath from an external cleaning liquid tank to increase the swelling effect. The washing liquid is discharged into the washing liquid tank and the photosensitive resin surface is dried with air.

In the above case, when mechanically loading and moving a glass substrate having a defect, the substrate may be damaged due to shaking during transfer in a cassette, and glass substrates having different defect characteristics of each glass substrate may be placed on a swelling bath under the same conditions. Putting and cleaning causes abnormalities in the glass substrate and residual foreign substances due to poor reaction characteristics, and damages due to different specifications of the glass substrate.

In addition, the photosensitive resin is not completely removed only by depositing the glass substrate on the swelling bath, and a problem occurs that an organic residue or a photoresist residue remains.

Accordingly, there is a need for development of a method for regenerating a defective glass substrate having each standardized process that not only does not cause damage during movement of the defective glass substrate but also completely removes various photosensitive materials and organic substances.

SUMMARY OF THE INVENTION The present invention has been made to meet the needs of developing a method for regenerating a defective glass substrate having each of the above standardized processes, and an object of the present invention is to clean only a specific portion of films laminated on a TFT-LCD glass substrate. Accordingly, the present invention provides a method for selectively regenerating a glass substrate of a thin film liquid crystal display device using a chemical reaction deep bath method that enables regeneration by layer according to a user's requirement.

In addition, another object of the present invention is to prevent damage during the movement of the defective glass substrate generated in the color filter forming process of the TFT-LCD glass substrate, and to completely remove all organic laminated films and foreign substances, etc. The present invention provides a method of selectively regenerating a thin glass liquid crystal display glass substrate using a chemical reaction deep bath method.

One embodiment of the present invention proposed to solve the above technical problem, the inspection step of performing an import inspection (visual inspection) process to confirm the model and the quantity and state of the glass substrate received; Obtain a glass substrate in a bath containing a strong acid-based or strong alkali-based chemicals to maintain a chemical reaction process, the column space provided in the glass substrate according to the reaction with the strong acid-based or strong alkali-based chemicals Each layer is removed so that the layer, the ITO film (transparent electrode), the overcoat layer, the RGB (red blue green) color representation RESIN layer, the chrome metal material black matrix or the resin RESIN material black matrix layer are melted and removed. A laminated film removing step of performing a process; And performing a post-treatment process for removing the chemical residues remaining on the glass substrate from which the respective laminated films are removed.

Hereinafter, a selective regeneration method of a thin film liquid crystal display glass substrate using a chemical reaction deep bath method according to the present invention will be described with reference to the accompanying drawings.

1 is a flowchart illustrating a regeneration method of a glass substrate of a thin film liquid crystal display according to the present invention.

(Column Space Layer Removal Process)

First, the worker performs an import inspection (visual inspection) process for confirming the model, quantity and state of the glass substrate 10 received (S100).

The import inspection process (S100) is a process of visually inspecting the glass substrate 10, and distinguishes whether the glass substrate 10 is a mass production glass substrate 10 or a dummy (for test purposes and equipment conveyance). In the case of mass production, the glass substrate 10 is divided into IPS, CR BM (TN), and resin TN type to confirm the model and quantity, and then the scratch of the glass substrate 10 is visually observed and the risk of damage is observed. Check the side of the large glass intensively.

More specifically, in the IPS model, the ITO thin film is formed on the rear surface, the CR BM is a black matrix formed using a metal thin film, and the resin TN is coated with a fluorescent layer, and all layers are stacked on the top surface.

In addition, by visually observing and checking the surface abnormality of each layer to check whether the chip of the edge or the end of the glass substrate 10, and check the broken state before operation and whether the defect during movement before wearing.

Then, the glass substrate 10 after the receipt inspection is manually inserted and obtained in a bath containing a chemical for removing the column space layer so that the reaction occurs with the chemical to remove the column space layer 60 of the glass substrate 10. To be made (S110).

At this time, the drug to remove the column space layer 60 is a strong alkali-based chemical solution, the strong alkali-based chemical solution is KOH 10%, MEA 18.5%, DMSO 18.5%, BDG 18%, ultra pure water 35% Mixed strip solution.

In addition, the chemical reaction conditions for removing the column space layer 60 is to maintain the temperature of the chemical temperature of 70 ℃ ± 5, the glass substrate 10 should be maintained for 25 minutes ± 5 in the chemical solution The column space layer is efficiently removed.

When the column space layer 60 removing process S110 is completed as described above, the post-treatment process S120 as described later is performed.

That is, after the glass substrate 10 is manually discharged from the bath and moved to the second rinse zone, the first rinse process is performed by spray shower and sponge cleaning (S121).

At this time, the spray shower to remove the drug using a pure water of purity 15 ~ 18㏁ · ㎝, spray shower at a pressure of 3.5Kg / min for 60 seconds while maintaining the temperature of the pure water at 20 ~ 30 ℃, pure water The reason for using (DI water: Deionized water) is to prevent re-adsorption of foreign substances in the thin film, and it is preferable to use pure water.

The first rinse step (S121) is carried out for 120 seconds, and the sponge cleaning and one-time spray shower is carried out in a pair of two people, after the spray shower is performed left, right five times, upper and lower six times, sponge cleaning left, It can be performed 10 times on the right side and 10 times on the upper and lower sides.

Then, the glass substrate 10 subjected to the first rinsing step (S121) is inserted into a bath containing an organic cleaning solution for manually removing fine foreign matter, and obtained by dipping (S122). It is preferably carried out at a temperature of 40 ~ 60 ℃ for about minutes, the organic cleaning solution is a chemical solution containing an inorganic alkali, a chelating agent, an anionic surfactant, a nonionic surfactant, water, etc. Be sure to

As a result, particles, metal ions, abrasives, glass culets, fingerprints, oil mist, and the like remaining on the surface of the glass substrate 10 are removed.

Then, after removing the fine foreign material of the glass substrate 10 and manually discharged from the bath containing the organic film cleaning liquid to move to the third rinse zone, manually performing a second rinse process by spray shower and sponge cleaning ( S123).

The second rinse process (S123) proceeds by cleaning the upper surface of the glass substrate 10 with a sponge and spraying with a one-time spray, and the back surface is in an air exposure state, so that the nozzle is purely sprayed and cleaned, but a shower treatment is performed on the back surface. Otherwise, the chemical liquid component dries rapidly, and stains and fine residues may be left. Thus, two sets of workers after the top surface cleaning turn over the glass substrate 10 to finish with the back shower and sponge cleaning.

After the second rinse step (S123) is performed, the glass substrate 10 is dried (S195) using purified air, and the glass substrate 10 subjected to the drying step (S195) is completed and in a defective state. A complete inspection process is performed (S197).

On the other hand, before the drying step (S195) by manually inserting into the automatic cleaning equipment for removing the ultra-fine foreign material can be added to repeat the high-pressure shower cleaning and roll brush cleaning.

Then, the completion | finish inspection process (S197) regarding the completion and defective state of the glass substrate 10 which performed the said drying process (S195) is performed. At this time, the drying step (S195) and the completion inspection step (S197), as well as the column space removal step described above for the glass substrate 10, as well as the ITO film layer removal step (S130), the overcoat layer removal step (S150) described later (S150). ), The RGB layer removal process (S170) and the chromium black matrix layer removal process (S185) are all performed sequentially, or if only a partial process is performed in the last step after the removal process is completed and the post-treatment process is completed do.

The completion inspection step (S197) is a reflection test for visually inspecting the horizontal direction by illuminating a halogen lamp in front of the inspector on the glass substrate 10 seated on the inspection table, and the halogen lamp in the rear of the glass substrate 10 It includes a permeation inspection to check in the direction and the edge inspection to check whether the foreign matter remaining in the outer portion of the glass substrate 10 or broken.

The halogen lamp used in the completion inspection process (S197) uses a light source of 20,000 lux.

The filling level of the chemicals is preferably maintained at 40 mm or more with respect to the glass substrate 10, which is difficult to obtain an etching effect when the glass substrate 10 in the bath is exposed to the atmosphere, and the regeneration period is long, thereby increasing the unit productivity effect. Because it falls.

In addition, the bath containing the drug using a swelling type bath, by installing an ultrasonic generator on one side to increase the swelling effect by vibrating the cleaning liquid.

On the other hand, since the post-processing step (S140) (S160) (S180) (S190) mentioned in the process to be described later is the same process as the above-described post-processing step (S120), it is the same as Figure 2 of the accompanying drawings, it will be omitted in the drawings do.

(ITO film-forming layer removal process)

In addition, the glass substrate 10 from which the column space layer 60 is removed is obtained in a bath containing a strong acid-based chemical and maintained to allow a chemical reaction process to occur, thereby allowing the glass to react with the strong acid-based chemical. An ITO deposition layer removing process for dissolving and removing the ITO deposition layer 50 provided in the substrate 10 is performed.

The chemical reaction dipping process is, for example, 15 to 26% of hydrochloric acid (HCI), 4 to 8% of nitric acid (NHO3), arsenic 2ppm or less, calcium 1ppm or less, cadmium 0.5ppm or less to remove 1400TO of ITO thin film. Cobalt 1ppm or less, Copper 1ppm or less, Iron 1ppm or less, Potassium 5ppm or less, Sodium 0.5ppm or less, Nickel 1ppm or less, Lead 5ppm or less, Tin 5ppm or less, Ultrapure water 60 ~ 75%, 20 minutes using a mixed etching solution Perform about ± 5 degrees. In addition, the temperature of the chemical is 40 ℃ ± 5 is suitable, if the temperature of the chemical is lower than 35 ℃ takes about 40-50 minutes of etching time to remove the ITO thin film and when the temperature is lower than 50 ℃ It is preferable to carry out at 35 ~ 40 ° C because the rapid aging not only shortens the cycle of chemical change, but also increases the energy consumption and the corrosion of surrounding equipment by the generated gas.

Since the post-treatment process is the same as described in the above-described column space layer removal process, a detailed description thereof will be omitted.

At this time, when the ITO film layer is to be retained, the above-described column space removing process may be performed, and then the overcoat layer removing process described later may be performed immediately.

(Overcoat layer removal process)

As described above, the column space layer removing process and the ITO film forming layer removing process are performed to perform only the glass substrate 10 or the column space layer removing process in which the column space layer and the ITO film forming layer are removed. When the removed glass substrate 10 is obtained in a bath containing a strong alkali chemicals and maintained for a predetermined time, the glass substrate 10 reacts with the strong alkali chemicals and the overcoat provided in the glass substrate 10. An overcoat layer removal process is performed to allow the (OVER COAT) layer to melt away.

At this time, the drug to remove the overcoat layer is a chemical solution of the same strong alkali-based chemicals to remove the column space layer, the chemical solution of the strong alkali series is KOH 10%, MEA 18.5%, DMSO 18.5%, BDG 18%, Ultrapure water containing 35% is mixed (STRIP) solution.

In addition, the chemical reaction condition for removing the overcoat layer 40 is that the temperature of the drug should be maintained at a temperature of 70 ℃ ± 5, the glass substrate 10 is maintained for 20 minutes ± 5 in the chemical solution The overcoat layer should be removed efficiently.

Since the post-treatment process is the same as described in the above-described process of removing the column space layer 60, a detailed description thereof will be omitted.

(R.G.B. layer removal process)

In addition, the glass substrate 10 may be obtained by performing the above-described overcoat layer removal process and obtaining the glass substrate 10 from which the overcoat layer 40 has been removed in a bath containing a strong alkali chemicals, and maintaining the glass substrate 10 for a predetermined time. RGB provided in the glass substrate 10 by reacting with a strong alkali chemicals R.G.B. to allow layer 30 to melt away. Perform a layer removal process.

At this time, the R.G.B. The chemical removing the layer 30 is a chemical solution of the same strong alkali as the chemical removing the column space layer, and the chemical solution of the strong alkali is KOH 10%, MEA 18.5%, DMSO 18.5%, BDG 18%, ultrapure water 35 It is an etching solution mixed with a content of%.

In addition, the R.G.B. Chemical reaction conditions for removing the layer 30 should be maintained at a temperature of 70 ℃ ± 5, and the glass substrate 10 must be maintained for 10 minutes ± 5 in the chemical solution R.G.B. Layer 30 is removed efficiently.

Since the post-treatment process is the same as described in the above-described process of removing the column space layer 60, a detailed description thereof will be omitted.

(Chrome metal material black matrix layer / RESIN material black matrix layer removal process)

And the aforementioned R.G.B. A layer removal process was carried out to provide When the glass substrate 10 from which the layer 30 is removed is obtained by holding the glass substrate in a bath containing a strong alkali chemicals and maintaining for a predetermined time, the glass substrate 10 reacts with the strong alkali chemicals and the glass A chromium metal material black matrix layer removing process is performed such that the chromium black matrix layer 20 provided in the substrate 10 is melted and removed.

At this time, the drug to remove the chromium black matrix layer 20 is a strong acid-based chemical solution, the strong acid-based chemical solution is CAN 17%, HC104 11%, calcium 1ppm or less, cadmium 0.5ppm or less, cobalt 1ppm, It is an etching solution containing 1 ppm or less of copper, 1 ppm or less of iron, 5 ppm or less of potassium, 0.5 ppm or less of sodium, 1 ppm or less of nickel, 5 ppm or less of lead, 5 ppm or less of tin, and 60 to 75% of ultrapure water.

In addition, in the chemical reaction condition for removing the chromium metal material black matrix layer 20, the chemical temperature should be maintained at a temperature of 20 ℃ ± 5, the glass substrate 10 in the chemical solution 20 minutes ± 5 must be maintained to effectively remove the chromium metal material black matrix layer 20.

Meanwhile, the chromium metal material black matrix layer 20 may be replaced with the resin RESIN material black matrix layer. In this case, the RESIN material black matrix layer may be provided with the resin RESIN material provided in the glass substrate in response to the strong alkali chemicals. The black matrix layer melts away.

Since the post-treatment process is the same as described in the above-described process of removing the column space layer 60, a detailed description thereof will be omitted.

3 to 7 are cross-sectional views of thin film liquid crystal display glass substrates reproduced according to the present invention, and FIGS. 8 to 13 are other embodiments of cross-sectional views of thin film liquid crystal display glass substrates reproduced according to the present invention.

Referring to FIG. 3, a black mattress layer 20, an RGB layer 30, an overcoat layer 40, and a column space 60 are formed on an upper surface of the glass substrate 10, and the glass substrate 10 may be formed. A transparent conductive film (ITO thin film) layer 50 is formed on the back side.

First, the glass substrate 10 is dipped in a bath containing chemicals for removing photoresist at 70 ° C. for 25 minutes, and then discharged and spray-washed and sponge-washed to remove column space as shown in FIG. 4. 60 is removed, the overcoat layer 40 is removed as shown in FIG. 5, and the RGB layer 30 is removed as shown in FIG.

Then, as shown in FIG. 7, the black matrix layer 20 is removed. At this time, CR BM can be retained according to a user's request, and the transparent conductive film (ITO thin film) layer 50 formed on the back side also remains. When the laminated film is re-formed on the regenerated glass substrate 10, the number of processes is reduced to reduce the unit cost and the process time is shortened to increase production efficiency.

Referring to FIG. 8, the black mattress layer 20, the RGB layer 30, the overcoat layer 40, the column space 60, and the transparent conductive film (ITO thin film) layer 50 are formed on the glass substrate 10. Is formed.

First, as shown in FIG. 9, the glass substrate 10 is dipped in a bath containing a chemical for removing an ITO thin film at 20 to 25 ° C. for 20 to 25 minutes, and then discharged to spray spray and sponge cleaning. By doing so, the transparent conductive film (ITO thin film) layer 50 is removed.

The glass substrate 10 is dipped in a bath containing a chemical for removing the photoresist at 65 ° C. for 20 minutes and then discharged to perform a spray cleaning and a sponge cleaning. As shown in FIG. 10, a column space ( 60 is removed, and the overcoat layer 40 is removed as shown in FIG.

In addition, the R.G.B.layer 30 is removed as shown in FIG. 12, and all black matrix layers 10 are removed as shown in FIG. 13, thereby regenerating the bare glass substrate 10.

The present invention having the above-described process can be applied to the color filter glass substrate 10 from the first generation to the seventh generation, thereby enabling a wide recycling according to the generation of the defective glass substrate 10.

The present invention is not limited to the above embodiments, and various modifications and changes can be made by those skilled in the art, which are included in the spirit and scope of the present invention included in the appended claims.

According to the present invention having the above-described configuration, operation, and preferred embodiments, the inspection process of the defective thin film liquid crystal display glass substrate, the process of removing the laminated films, the rinsing process, and the drying process are performed, and the inspection completion process is performed. By not only completely removing the photoresist material and organic and inorganic substances in the glass substrate, but also preventing the re-adsorption of foreign substances and the damage of the glass substrate that may occur when the glass substrate is mechanically moved, and also saves raw materials and glass Environmental pollution due to substrate disposal can be prevented.

In addition, it is possible to produce a regenerated glass substrate at the same level as a new glass substrate by the rinsing process for each laminated film stepwise, and to selectively regenerate the glass substrate by cleaning to a specific partial laminated film remaining state for each laminated film according to the user's requirements. By reducing the number of steps during the re-lamination process of the regenerated glass substrate.

Claims (17)

An inspection step of performing an import inspection (visual inspection) process for confirming the model, quantity, and state of the received glass substrate; It contains 10% nitric acid (NHO3), 25% hydrochloric acid (HCI), 65% ultrapure water, or 10% KOH, 10% MEA 18.5%, DMSO 18.5%, BDG 18%, and 35% ultrapure water. After receiving the glass substrate in a bath containing a mixed strong alkali-based chemical solution and having a vibration generating device, generating the vibration generating device to vibrate the chemical solution so that the chemical reaction process can take place. Column space layer or ITO film (transparent electrode) or OVER COT layer or RGB (red blue green) color expressing RESIN layer or chromium metal material black matrix or resin according to reaction with chemicals of series or strong alkali series A laminated film removing step of melting and removing the RESIN material black matrix layer; And In order to remove the chemical residues remaining on the glass substrate from which the respective laminated films are removed, the glass substrate is manually discharged from the bath and placed on a cleaning stand, followed by spray shower and sponge cleaning using ultrapure water. The rinse process is performed, the glass substrate subjected to the first rinse process is inserted and dipped into a bath containing an organic cleaning solution for manually removing fine foreign matter, and the organic substrate is manually discharged from a bath containing an organic film cleaning solution. After moving to the third rinse zone, a second rinse step is performed by spray shower and sponge cleaning manually, the glass substrate subjected to the second rinse step is dried using purified air, and the drying step is performed. Includes post-treatment steps to perform a complete inspection process for completion and failure of glass substrates. Doedoe configuration, Selecting a thin film liquid crystal display glass substrate using a chemical reaction deep bath method by manually inserting into an automatic cleaning device for removing ultra-fine foreign matter before the drying process, and repeatedly performing a high pressure shower cleaning and a roll brush cleaning. How to play. The method of claim 1, wherein the column space layer removing step of removing the laminate film comprises: Obtaining the glass substrate in a bath containing a strong alkali chemicals to maintain the chemical reaction process, so that the column space layer provided in the glass substrate melts and removes in accordance with the reaction with the strong alkali chemicals A selective regeneration method of a thin film liquid crystal display glass substrate using a chemical reaction deep bath method. The method of claim 1, wherein the ITO film layer removing step in the laminated film removing step, The glass substrate from which the column space layer was removed was obtained in a bath containing a strong acid-based chemical and maintained in the glass substrate according to the reaction with the strong acid-based chemical so as to maintain the chemical reaction process. A method of selectively regenerating a glass substrate of a thin film liquid crystal display device using a chemical reaction deep bath method, characterized in that the ITO film forming layer is melted and removed. The method of claim 1, wherein the removing of the overcoat layer in the laminated film removing step comprises: The glass substrate is obtained in a bath containing a strong alkali chemicals to maintain a chemical reaction process, and the overcoat layer provided in the glass substrate melts in response to the reaction with the strong alkali chemicals. A selective regeneration method of a thin film liquid crystal display glass substrate using a chemical reaction deep bath method, characterized in that the process to be removed. The method of claim 1, wherein the R.G.B.layer removing step in the laminated film removing step comprises: Obtaining the glass substrate in a bath containing a strong alkali chemicals so that the chemical reaction process can occur, the R.G.B. provided in the glass substrate in accordance with the reaction with the strong alkali chemicals. A method of selectively regenerating a glass substrate of a thin film liquid crystal display using a chemical reaction deep bath method, characterized in that the layer is melted and removed. The method of claim 1, wherein the removing of the chromium metal material black matrix or the resin RESIN material black matrix layer in the laminated film removing step comprises: The glass substrate is obtained in a bath containing a strongly acidic and strong alkali chemicals according to the constituents of the black matrix and maintained so that the chemical reaction process can take place. A method of selectively regenerating a thin film liquid crystal display device glass substrate using a chemical reaction deep bath method, wherein the chromium metal material black matrix or the resin RESIN material black matrix layer provided in the substrate is melted and removed. According to claim 1, wherein the chemical solution of the strong alkali series, And an etching solution used to remove the column space layer, the overcoat layer, and the R.G.B.layer. delete The method of claim 2, wherein the column space layer removing step, A method of selectively regenerating a glass substrate of a thin film liquid crystal display using a chemical reaction deep bath method, which is performed at a temperature of 70 ± 5 ° C. for 25 ± 5 minutes. The method of claim 3, wherein the ITO film forming layer removing step, A method of selectively regenerating a glass substrate of a thin film liquid crystal display using a chemical reaction deep bath method, which is performed at a temperature of 40 ± 5 ° C. for 20 ± 5 minutes. The method of claim 4, wherein the overcoat layer removing step, A method of selectively regenerating a glass substrate of a thin film liquid crystal display using a chemical reaction deep bath method, which is performed at a temperature of 70 ± 5 ° C. for 20 ± 5 minutes. The method of claim 5, wherein the R.G.B. A method of selectively regenerating a glass substrate of a thin film liquid crystal display using a chemical reaction deep bath method, which is performed at a temperature of 70 ± 5 ° C. for 10 ± 5 minutes. The method of claim 1, wherein the removing of the laminate film, Chemical reaction dip, characterized in that it further comprises the step of leaving the back ITO deposition layer or the chrome black matrix layer according to the user's request, and removing the remaining laminated film to selectively retain the required laminated film to be regenerated A selective regeneration method of a glass substrate of a thin film liquid crystal display using a bath method. The thin film liquid crystal display using the chemical reaction deep bath method according to any one of claims 1 to 5, wherein the filling level of the bath from which the glass substrate is obtained is maintained at 40 mm or more based on the glass substrate. Selective recycling method of glass substrate. delete delete delete

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