KR100582837B1 - 웨이퍼 평탄화 장치 및 방법 - Google Patents

웨이퍼 평탄화 장치 및 방법 Download PDF

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Publication number
KR100582837B1
KR100582837B1 KR1020030095812A KR20030095812A KR100582837B1 KR 100582837 B1 KR100582837 B1 KR 100582837B1 KR 1020030095812 A KR1020030095812 A KR 1020030095812A KR 20030095812 A KR20030095812 A KR 20030095812A KR 100582837 B1 KR100582837 B1 KR 100582837B1
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KR
South Korea
Prior art keywords
wafer
etchant
liquid nitrogen
supply pipe
planarization
Prior art date
Application number
KR1020030095812A
Other languages
English (en)
Korean (ko)
Other versions
KR20050064445A (ko
Inventor
김상권
Original Assignee
동부일렉트로닉스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동부일렉트로닉스 주식회사 filed Critical 동부일렉트로닉스 주식회사
Priority to KR1020030095812A priority Critical patent/KR100582837B1/ko
Priority to JP2004371786A priority patent/JP4011579B2/ja
Priority to DE102004063066A priority patent/DE102004063066B4/de
Priority to US11/022,166 priority patent/US20050133156A1/en
Publication of KR20050064445A publication Critical patent/KR20050064445A/ko
Application granted granted Critical
Publication of KR100582837B1 publication Critical patent/KR100582837B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020030095812A 2003-12-23 2003-12-23 웨이퍼 평탄화 장치 및 방법 KR100582837B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020030095812A KR100582837B1 (ko) 2003-12-23 2003-12-23 웨이퍼 평탄화 장치 및 방법
JP2004371786A JP4011579B2 (ja) 2003-12-23 2004-12-22 ウェハ平坦化装置及び方法
DE102004063066A DE102004063066B4 (de) 2003-12-23 2004-12-22 Vorrichtung und Verfahren zur Waferplanierung
US11/022,166 US20050133156A1 (en) 2003-12-23 2004-12-23 Apparatus and method for wafer planarization

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030095812A KR100582837B1 (ko) 2003-12-23 2003-12-23 웨이퍼 평탄화 장치 및 방법

Publications (2)

Publication Number Publication Date
KR20050064445A KR20050064445A (ko) 2005-06-29
KR100582837B1 true KR100582837B1 (ko) 2006-05-23

Family

ID=34675990

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030095812A KR100582837B1 (ko) 2003-12-23 2003-12-23 웨이퍼 평탄화 장치 및 방법

Country Status (4)

Country Link
US (1) US20050133156A1 (ja)
JP (1) JP4011579B2 (ja)
KR (1) KR100582837B1 (ja)
DE (1) DE102004063066B4 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11596087B2 (en) 2018-11-22 2023-02-28 SK Hynix Inc. Data center

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1981071A4 (en) * 2006-01-20 2009-01-14 Sumco Corp METHOD OF CALVING THE WAFER SURFACE AND DEVICES USED THEREFROM
US10593603B2 (en) 2018-03-16 2020-03-17 Sandisk Technologies Llc Chemical mechanical polishing apparatus containing hydraulic multi-chamber bladder and method of using thereof
TWI810563B (zh) * 2021-05-14 2023-08-01 達運精密工業股份有限公司 遮罩的製造方法及遮罩製造裝置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4370192A (en) * 1980-10-20 1983-01-25 American Microsystems, Inc. Apparatus for chemical etching of silicon
JPS58205153A (ja) * 1982-05-25 1983-11-30 Dainippon Screen Mfg Co Ltd 薬液散布装置
DE3273475D1 (en) * 1982-10-14 1986-10-30 Ibm Deutschland Method to measure the thickness of eroded layers at subtractive work treatment processes
US4793895A (en) * 1988-01-25 1988-12-27 Ibm Corporation In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection
US4954142A (en) * 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US5081421A (en) * 1990-05-01 1992-01-14 At&T Bell Laboratories In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection
US5081796A (en) * 1990-08-06 1992-01-21 Micron Technology, Inc. Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer
US5036015A (en) * 1990-09-24 1991-07-30 Micron Technology, Inc. Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers
JP2583152B2 (ja) * 1990-11-06 1997-02-19 大日本スクリーン製造株式会社 基板回転式表面処理方法
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
US6537133B1 (en) * 1995-03-28 2003-03-25 Applied Materials, Inc. Method for in-situ endpoint detection for chemical mechanical polishing operations
US20020064961A1 (en) * 2000-06-26 2002-05-30 Applied Materials, Inc. Method and apparatus for dissolving a gas into a liquid for single wet wafer processing
EP1369904B1 (de) * 2000-10-31 2009-01-21 Sez Ag Vorrichtung zur Flüssigkeitsbehandlung von scheibenförmigen Gegenständen
US6811680B2 (en) * 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
US6699356B2 (en) * 2001-08-17 2004-03-02 Applied Materials, Inc. Method and apparatus for chemical-mechanical jet etching of semiconductor structures
US6827633B2 (en) * 2001-12-28 2004-12-07 Ebara Corporation Polishing method
US6770565B2 (en) * 2002-01-08 2004-08-03 Applied Materials Inc. System for planarizing metal conductive layers
JP2003273064A (ja) * 2002-03-15 2003-09-26 Fujitsu Ltd 堆積物の除去装置及び除去方法
JP3751897B2 (ja) * 2002-03-27 2006-03-01 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
US20030209069A1 (en) * 2002-05-13 2003-11-13 Silicon Integrated Systems Corp. Chemical bath having liquid level indications in outer trough
US6806193B2 (en) * 2003-01-15 2004-10-19 Texas Instruments Incorporated CMP in-situ conditioning with pad and retaining ring clean

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11596087B2 (en) 2018-11-22 2023-02-28 SK Hynix Inc. Data center

Also Published As

Publication number Publication date
DE102004063066B4 (de) 2008-01-17
JP2005184008A (ja) 2005-07-07
KR20050064445A (ko) 2005-06-29
JP4011579B2 (ja) 2007-11-21
DE102004063066A1 (de) 2005-11-03
US20050133156A1 (en) 2005-06-23

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