KR100582036B1 - Semiconductor Manufacturing Method and Wafer-Holder - Google Patents

Abstract

The present invention further prevents the substrate back surface from being exposed to the process reaction during the semiconductor process, and induces a reaction gas that penetrates into the microgap to reduce the deposition of the back surface of the semiconductor manufacturing method and the semiconductor manufacturing apparatus. The holder is disclosed.

To this end, the present invention provides a holder body which is provided as a flat plate and the rear surface of the semiconductor substrate is seated: a board lifting body which is lifted by a dual boat from the holder body and is in contact with the holder body to conceal side and top outer peripheries of the semiconductor substrate. A substrate hatch, which is mounted on the bottom of the hatch body and comprises a clamp on which the semiconductor substrate is mounted: the holder body is provided with an insertion groove into which the clamp is inserted, and a reaction gas flowing into the micro gap between the holder body and the board body. It provides a substrate holder of the semiconductor manufacturing apparatus consisting of a deposition induction space portion to extend the contact area with the reaction gas in the flow path to induce the deposition of the reaction gas, and the back portion of the semiconductor substrate in contact with the top, side and back of the semiconductor substrate Reaction gas needle from the outside of the semiconductor substrate to the back through the holder to conceal the Sealing step to prevent the penetration: Despite the sealing step, a semiconductor substrate is formed by providing an induction space in the holder to extend the contact area with respect to the reaction gas with respect to the reaction gas that penetrates the rear surface of the semiconductor substrate due to the microgap between the holder and the semiconductor substrate. Provided is a semiconductor manufacturing method comprising a holder deposition induction step to prevent deposition on the back.

Description

Semiconductor manufacturing method and substrate holder of semiconductor manufacturing apparatus {Semiconductor Manufacturing Method and Wafer-Holder}

1A is a conceptual view illustrating a semiconductor manufacturing apparatus having a dual boat and a substrate holder to prevent deposition on the back surface of the substrate;

1B is a conceptual diagram illustrating a conventional substrate holder applied to the semiconductor manufacturing apparatus of FIG. 1A;

2 is a perspective conceptual view showing a semiconductor substrate holder according to the present invention;

3 is a cross-sectional view taken along line A-A of FIG. 2 showing a seating state of a substrate holder;

4 is a cross-sectional explanatory view showing an embodiment of the holder body deposition induction space portion of the substrate holder according to the present invention, B-B cross-sectional explanatory view of FIG.

5 is a cross-sectional view showing another embodiment of the holder body deposition induction space portion according to the present invention;

Figure 6 is a cross-sectional explanatory view showing another embodiment of the holder body deposition induction space portion according to the present invention,

Figure 7 is a cross-sectional view showing another embodiment of the deposition induction space portion according to the present invention.

-Explanation of symbols for the main parts of the drawings-

100-semiconductor substrate, 3-first substrate loading boat,

4-2nd substrate loading boat, 8-board side guard,

9-dual boat, 10-holder body,

12-substrate lifting body, 14-clamp,

16-Board Hatch, 18-Insertion Groove,

20-deposition induction space part, 22-jaw part,

24-1st deposition induction space part, 26-2nd deposition induction space part,

28-protruding contact extension,

In the present invention, a dual boat is used to prevent backside deposition through a substrate holder, and further prevents the backside of the semiconductor substrate from being exposed to the process reaction during the process, and also introduces a gas flowing between the substrate and the holder. The present invention relates to a semiconductor manufacturing method and a substrate holder of a semiconductor manufacturing apparatus which further reduce the deposition on the back surface of the substrate by induction avoidance.

In general, a semiconductor manufacturing apparatus for processing a semiconductor substrate is a batch type including a substrate loading boat for loading a large amount of the semiconductor substrate therein to improve the process processing capability and one by one to reduce the process time extremely There is an ongoing single leaf type.

However, in the conventional batch type semiconductor manufacturing apparatus, since the slots are locally mounted at the edges of the semiconductor substrate during the process, for example, both sides of the semiconductor substrate and the lower part of the semiconductor substrate are supported during the film forming process. The film for the semiconductor process is also formed in the loading boats and the slots.

Therefore, when the substrate is unloaded after the semiconductor fabrication process is completed, the film integrally connected to the substrate and the slot is crushed, particles are generated during the crushing, and relatively many particles are generated at the backside of the substrate.

In addition, since various films are overlapped and coated on the back surface, mechanical stress increases and the semiconductor substrate is warped, and the film uniformity of the semiconductor substrate backside is significantly reduced compared to the film uniformity of the upper surface. Photolithography causes many process problems.

Therefore, the present applicant essentially blocks the formation of a film on the backside (backside) of the semiconductor substrate during the film forming process for semiconductor manufacturing, thereby improving the yield and significantly improving the productivity of the entire semiconductor manufacturing process (Application No. 10-2003- 0091246).

1A, a reaction tube 1 which provides a closed space for performing a film forming process on a semiconductor substrate and is mounted in a process space in the reaction tube to load at least one semiconductor substrate 100. The first substrate loading boat 3 and the first substrate loading boat 3 for supporting the substrate holder 2 supporting the backside of the semiconductor substrate 100 from being deposited may be adjacent to the inside or the outside of the first substrate loading boat 3. Dual substrate loading boat consisting of a second substrate loading boat (4) configured to move finely up and down relative to the first substrate loading boat (3) and including a substrate support for independently supporting the edge portion of the semiconductor substrate Boat 9 and: The first substrate is installed on the lower portion of the dual boat 9 for loading the substrate and independently supports the lower portion of the first substrate loading boat 3 and the second substrate loading boat 4, respectively. Loading beam And a space adjusting device (5. driving device) capable of lifting and lowering at least one of the second substrate loading boats up and down to adjust the support state of the semiconductor substrate relatively. At least one process gas required for the process is provided in the reaction chamber. It includes a gas supply device for supplying.

Here, the substrate holder 2 has a holder body 6 which is substantially circular plate-like as shown in FIG. 1B: a dehisced portion 7 formed by cutting a portion where the substrate support portion overlaps with a predetermined figure and a holder body ( The substrate side guard portion 8 is formed on the plate surface of the substrate 6 and is formed so as to closely adhere to the side edge portion of the semiconductor substrate 100 so that process gas does not pass through, and the substrate side guard portion 8 includes the semiconductor substrate 100. It is formed in a kind of ring-shaped protruding from the plate surface of the holder body 6 along the edge end of the) by the height of the thickness of the semiconductor substrate 100.

Through the semiconductor manufacturing apparatus having such a substrate holder 2 and a dual boat 9 to which the substrate holder 2 is applied, a semiconductor film is not formed on the rear surface of the semiconductor substrate 100, and thus, the mando is deposited on the rear surface of the semiconductor substrate. Due to the film, it is possible to fundamentally block the process defect generated in the subsequent process.

By the way, there is also a portion where the semiconductor substrate is finely exposed through the substrate holder (2), which is a deformed portion (7) which is a perforated portion formed to lift and lower the substrate support of the second substrate loading boat (4). )to be.

That is, in order to unload / load the semiconductor substrate 100 to the dual boat 9 after completion of the process, the semiconductor substrate 100 should be spaced apart from the substrate holder 2, and the semiconductor substrate 100 needs to be spaced apart from the substrate holder during the process. As a result, the second board loading boat is combined to avoid interference with the substrate holder, and the ten portions 7 are formed for the operation of the second board loading boat.

The depressed portions 7 expose the micro-zones of the semiconductor substrate 100 to the process, and there is no possibility that the process film may be formed in the micro-zones during the process.

In addition, although the substrate side guard portion 8 forms a step to prevent the process gas from flowing into the backside of the substrate, it cannot be completely sealed.

This is because microgap exists between the substrate side guard portion 8 and the substrate, and microgaps exist even when the substrate side guard portion 8 and the substrate are in contact with each other.

Therefore, in the semiconductor manufacturing apparatus in which the dual boat is used to prevent backside deposition through the substrate holder, the back surface of the semiconductor substrate is further prevented from being exposed to the process reaction during the process, and also introduced between the substrate and the holder. It is an object of the present invention to provide a substrate holder of a semiconductor manufacturing method and a semiconductor manufacturing apparatus which improves the semiconductor manufacturing yield and productivity by further reducing the deposition of the back surface of the substrate by avoiding the gas.

To this end, the present invention provides a holder for contacting the non-deposited area of the upper surface of the semiconductor substrate and the side and the rear surface to cover the rear portion of the semiconductor substrate, thereby preventing the reaction gas from penetrating from the outside of the semiconductor substrate to the rear surface. Nevertheless, the holder deposition induces a deposition space on the back surface of the semiconductor substrate by providing an induction space for the reaction gas penetrating into the rear surface of the semiconductor substrate due to the microgap between the holder and the semiconductor substrate to extend the contact area with the reaction gas. A semiconductor manufacturing method comprising a step.

The present invention for this purpose is provided with a reaction tube for providing a closed space to proceed the process on the semiconductor substrate, is mounted in the process space provided by the reaction tube at least one semiconductor substrate is loaded and moved up and down with each other A dual boat is provided with a gap provided by a first board loading boat and a second board loading boat, and a substrate holder on which the semiconductor substrate is seated is seated on the dual boat, thereby concealing the rear surface of the semiconductor substrate during the process. In the substrate holder of the manufacturing apparatus:

A holder body provided as a flat plate and seated on a rear surface of the semiconductor substrate: a substrate lifting and lower body which is lifted by a dual boat from the holder body and is in contact with the holder body to conceal side and top outer peripheries of the semiconductor substrate and a bottom of the substrate lifting body. A substrate lifting hole formed of a clamp mounted on the semiconductor substrate; the holder body is provided with an insertion groove into which the clamp is inserted, and a reaction gas flows into the flow path of the reaction gas flowing into the micro gap between the holder body and the substrate lifting body. A substrate holder of a semiconductor manufacturing apparatus comprising a vapor deposition inducing space portion which extends a contact area with and induces deposition of a reaction gas with the expanded contact area.

Here, the clamp is characterized in that the separation distance is secured to provide a working space of the robot arm so that the substrate is loaded / unloaded.

Here, the deposition-inducing space portion formed in the holder body is characterized by being formed as a ring-shaped groove surrounding the outer peripheral bottom of the semiconductor substrate.

In another embodiment, the deposition-inducing space portion formed in the holder body is formed of a groove which is formed near the outer circumferential bottom of the semiconductor substrate and is formed in a groove that is responsible for the entire space.

As another embodiment, the deposition-inducing space portion formed in the holder body may be a ring-shaped groove surrounding the outer circumferential bottom portion of the semiconductor substrate as the primary deposition-inducing space portion, and adjacent to the groove in charge of the overall space of the semiconductor bottom portion. Characterized in that the deposition induction space portion is formed to overlap the secondary deposition induction space portion.

In addition, the deposition-inducing space portion is characterized in that a plurality of protruding contact extension portion is formed so that the contact area is extended.

As described above, the present invention provides a semiconductor manufacturing method for reducing the deposition of the back surface of the semiconductor substrate by applying a contact with the reaction gas that can be deposited on the back side of the semiconductor substrate to the holder side and a holder of the semiconductor manufacturing apparatus therefor. to provide.

That is, despite the precise contact between the solid holder and the solid semiconductor substrate, it is difficult to perform a complete hermetic seal between the solids, and the amount of reaction gas introduced into the microgap by such contact is limited.

Therefore, the space (contact area) that can be actually deposited is widened, and this is applied to the holder to prevent deposition on the back surface of the semiconductor substrate as much as possible.

DETAILED DESCRIPTION Hereinafter, the most preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the present invention. . Other objects, features, and operational advantages, including the purpose, working effects, and the like of the present invention will become more apparent from the description of the preferred embodiment.

For reference, the embodiments disclosed herein are presented by selecting the most preferred examples to help those skilled in the art from understanding various embodiments, and the technical spirit of the present invention is not necessarily limited or limited by the embodiments. Various changes and modifications are possible within the scope without departing from the spirit of the invention, as well as other equivalent embodiments.

Figure 2 is a perspective conceptual view showing a semiconductor substrate holder according to the present invention, Figure 3 is a cross-sectional view taken along the line A-A of Figure 2 showing a mounting state of the substrate holder.

The present invention is provided with a reaction tube for providing a closed space for the process to proceed to the semiconductor substrate, the first substrate is mounted in the process space provided by the reaction tube is loaded with at least one semiconductor substrate and moved up and down with each other The semiconductor boat is provided with a dual boat provided with a gap between the loading boat and the second substrate loading boat, and a substrate holder on which the semiconductor substrate is seated is seated on the dual boat to conceal the rear surface of the semiconductor substrate during the process. In the substrate holder of

Holder body 10 provided with a flat plate and the back of the semiconductor substrate 100 is seated: the substrate lifting hole is lifted by the dual boat in the holder body 10 and in contact with the holder body to conceal the side and top outer circumference of the semiconductor substrate A substrate lifter 16 formed of a main body 12 and a clamp 14 mounted to the bottom of the substrate lifter main body 12 to which the semiconductor substrate 100 is mounted: the holder body 10 includes the clamp 14 Is inserted into the groove 18 is inserted, the extended contact area with the reaction gas in the flow path of the reaction gas flowing into the micro-gap of the holder body 10 and the substrate lifting and lower body 12 is extended A substrate holder of a semiconductor manufacturing apparatus comprising a deposition induction space portion 20 which induces deposition of a reaction gas into an area.

That is, the holder according to the present invention is composed of a holder body 10, the substrate lifting hole 12 and the deposition-inducing space portion 20 provided therein, each of which is connected to each boat of the dual boat.

The holder body 10 is formed of a flat plate to which the semiconductor substrate 100 is seated, thereby concealing the rear surface of the semiconductor substrate 100.

On the other hand, the substrate lifting hole 16 is composed of the substrate lifting body 12 and the clamp 14, the substrate lifting body 12 is ring-shaped and coupled to the holder body 10 to the ratio of the upper surface of the semiconductor substrate 100 It will conceal the deposition zone and sides.

In addition, the clamp 14 is spaced apart from the holder body 10 during the loading / unloading of the semiconductor substrate 100 so as to pass through the semiconductor substrate 100 and provide a standby state of the process.

Thus, the clamp 14 is spaced apart from the substrate lifting body 12 to provide a working space for the robot arm.

When the semiconductor substrate 100 is seated on the holder body 10 by the holder, the outer circumferential portion, the side surface, and the rear surface of the upper surface of the semiconductor substrate 100 are concealed by the holder.

However, as described above, the precise contact between the holder in the solid state and the semiconductor substrate does not provide a perfect seal against penetration of the reaction gas, and the present invention uses such a concealment as a basic blocking means, and as an auxiliary means, with the reaction gas. A separate guide space for inducing contact is provided in the holder.

That is, the deposition-inducing space portion 20 is provided in the substrate lifting and lowering body 12 and the holder body 10 to extend the contact area of the reaction gas penetrating from the upper surface and the side of the semiconductor substrate 100 in the holder.

Divided into a plurality of embodiments by the deposition-induced space portion 20 provided in the holder body 10, an exemplary view Figure 4 is a cross-sectional explanatory view showing one embodiment, the cross-sectional view BB line of FIG. .

This is characterized in that the deposition induction space portion 20 formed in the holder body 10 is formed as a ring-shaped groove surrounding the outer peripheral bottom of the semiconductor substrate 100, the most basic deposition induction space portion of the semiconductor substrate At the outer periphery, the reaction gas invading therefrom is extended to the deposition induction space to induce most of the reaction gas to be deposited there.

Next, Figure 5 is another embodiment of the deposition-inducing space portion formed in the holder body 10, the jaw portion 22 is formed close to the outer peripheral bottom of the semiconductor substrate 100 is responsible for the overall space other than that Characterized in that formed into a groove.

This is because most of the space in the outer circumferential bottom of the semiconductor substrate is formed as a vapor deposition-inducing space portion, and a space is formed in most of the outer circumferential bottom by the jaw portion adjacent to the outer circumferential bottom, and the reaction gas infiltrated from the side is dispersed to the inner wall and the lower surface Deposition is then induced.

Next, Figure 6 is another embodiment of the deposition induction space portion formed in the holder body, the ring-shaped groove surrounding the outer peripheral portion of the semiconductor substrate as the primary deposition induction space portion 24, the neighboring As a result, the deposition-inducing space portion is formed such that the grooves covering the entire space of the semiconductor bottom are overlapped with the secondary deposition-inducing space portion 26.

This overlaps the embodiment of FIG. 4 and the embodiment of FIG. 6, in which a primary space is provided at the outer peripheral bottom to induce vapor deposition therefrom, and the secondary reaction space is responsible for diffused residual reaction gas.

On the other hand, the deposition induction space portion may be formed with a plurality of contact pins to extend the contact area in a limited space.

That is, Figure 7 is another embodiment of the deposition induction space portion, the deposition induction space portion 20 is characterized in that a plurality of protruding contact extension portion 28 is formed so that the contact area is extended.

According to the substrate holder of the present invention, the present invention provides a non-deposition region of the upper surface of the semiconductor substrate and a holder in contact with the side and the rear surface to conceal the rear portion of the semiconductor substrate, thereby preventing the reaction gas penetration from the outside of the semiconductor substrate to the rear surface. Sealing Step: Despite the sealing step, deposition is made on the back surface of the semiconductor substrate by providing an induction space for expanding the contact area of the reactant gas with respect to the reactant gas that penetrates the back surface of the semiconductor substrate due to the microgap between the holder and the semiconductor substrate. To provide a semiconductor manufacturing method comprising a holder deposition inducing step to hinder.

That is, when the operation of the present invention linked thereto is comprehensively described, first, the semiconductor substrate is loaded into the dual boat, and the semiconductor substrate is loaded into the clamp of the substrate hatch.

As the substrate lifting hole is lowered and the clamp is inserted into the holder body, the semiconductor substrate is seated on the holder body.

The substrate lifting hole and the holder body conceal the non-deposition region and the side and the rear surface of the upper surface of the semiconductor substrate.

As the process proceeds, the reaction gas is injected into the tube (not shown), and the upper surface of the semiconductor substrate is exposed to the reaction gas.

At this time, a part of the reaction gas is to be penetrated into the rear surface of the semiconductor substrate from the upper and side portions of the substrate, the sealing due to the contact of the holder is primarily hindered.

Nevertheless, a predetermined amount of reaction gas tries to penetrate the rear surface of the semiconductor substrate, and by expanding the area where the reaction gas penetrates in the deposition-inducing space portion is contacted, inducing the reaction gas to react with this area, thereby It will reduce the amount penetrated into.

As described above, according to the present invention, the holder of the semiconductor substrate primarily conceals the outer periphery of the semiconductor substrate to prevent the reaction gas from penetrating into the rear surface of the semiconductor substrate during the process, and the deposition induction space formed in the holder secondly penetrates. By inducing the reaction of the reaction gas, since the deposition on the back surface of the semiconductor substrate is minimized, ultimately, there is an effect of further improving the production yield and productivity of the semiconductor.

Claims (7)

Sealing step that prevents penetration of reactive gas from the outside of the semiconductor substrate to the back surface by providing a holder for contacting the non-deposition area of the upper surface of the semiconductor substrate and the side and the rear surface to conceal the back portion of the semiconductor substrate: It comprises a holder deposition induction step for preventing deposition on the back surface of the semiconductor substrate by providing an induction space for expanding the contact area with the reaction gas in the holder for the reaction gas penetrated to the back surface of the semiconductor substrate with a fine play with the semiconductor substrate Semiconductor manufacturing method. A reaction tube for providing a closed space is provided on the semiconductor substrate so that the process can be carried out, and the first substrate loading boat is mounted in the process space provided by the reaction tube so that at least one semiconductor substrate is loaded and moved up and down. And a dual boat provided with a gap provided by the boat for loading the second substrate, and a substrate holder on which the semiconductor substrate is seated is seated on the dual boat so that the rear surface of the semiconductor substrate is concealed during the process. In: A holder body provided as a flat plate and seated on a rear surface of the semiconductor substrate: a substrate lifting and lower body which is lifted by a dual boat from the holder body and is in contact with the holder body to conceal side and top outer peripheries of the semiconductor substrate and a bottom of the substrate lifting body. A substrate lifting hole formed of a clamp mounted on the semiconductor substrate; the holder body is provided with an insertion groove into which the clamp is inserted, and reacts with a flow path of a reaction gas introduced into a micro gap between the holder body and the substrate lifting body. A substrate holder of a semiconductor manufacturing apparatus, comprising a deposition-inducing space portion that extends a contact area with a gas to induce deposition of a reaction gas with the expanded contact area. 3. The substrate holder of claim 2, wherein the clamp is secured to provide a working space of the robot arm so that the substrate is loaded / unloaded. The substrate holder of the semiconductor manufacturing apparatus according to claim 2, wherein the deposition-inducing space portion formed in the holder body is formed by a ring-shaped groove surrounding the outer circumferential bottom portion of the semiconductor substrate. The substrate holder of the semiconductor manufacturing apparatus according to claim 2, wherein the deposition-inducing space portion formed in the holder body is formed of a groove which is formed close to the outer circumferential bottom of the semiconductor substrate and is responsible for the entire space. The groove of claim 2, wherein the deposition induction space portion formed in the holder body has a ring-shaped groove surrounding the outer circumferential bottom portion of the semiconductor substrate as the primary deposition induction space portion, and the groove in charge of the entire space of the semiconductor bottom is adjacent to the inside. The substrate holder of the semiconductor manufacturing apparatus, characterized in that the deposition induction space portion is formed so as to overlap the secondary deposition induction space portion. 3. The substrate holder of claim 2, wherein a plurality of protruding contact extension portions are formed in the deposition induction space portion so that the contact area with the reaction gas is extended.

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