KR100572970B1 - Semiconductor manufacturing apparatus applied mao coating - Google Patents

Semiconductor manufacturing apparatus applied mao coating Download PDF

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KR100572970B1
KR100572970B1 KR1020030040813A KR20030040813A KR100572970B1 KR 100572970 B1 KR100572970 B1 KR 100572970B1 KR 1020030040813 A KR1020030040813 A KR 1020030040813A KR 20030040813 A KR20030040813 A KR 20030040813A KR 100572970 B1 KR100572970 B1 KR 100572970B1
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chamber
semiconductor manufacturing
heater
mao
manufacturing apparatus
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KR1020030040813A
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Korean (ko)
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KR20040078870A (en
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명달호
강승동
임유동
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(주)티티에스
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Coating By Spraying Or Casting (AREA)

Abstract

본 발명은 마오코팅층(MAO Coating)이 형성된 반도체 제조장치에 관한 것이다. 본 발명은 반도체 제조용 챔버와 히터, 가스분사장치 소재인 알루미늄에 마오코팅 방식을 이용한 세라믹코팅(Al203)을 수행하여 장치의 내구성을 향상시킴과 동시에 웨이퍼 제조효율을 향상시킬 수 있도록 한다.The present invention relates to a semiconductor manufacturing apparatus in which a Mao coating layer is formed. The present invention performs a ceramic coating (Al 2 O 3 ) using a Mao coating method on the aluminum, the chamber for the semiconductor manufacturing, the heater and the gas injection device to improve the durability of the device and at the same time improve the wafer manufacturing efficiency.

반도체 제조장치, 마오코팅Semiconductor manufacturing equipment, Mao coating

Description

마오코팅이 적용된 반도체 제조장치{SEMICONDUCTOR MANUFACTURING APPARATUS APPLIED MAO COATING}Semiconductor Manufacturing Equipment with Mao Coating {SEMICONDUCTOR MANUFACTURING APPARATUS APPLIED MAO COATING}

도 1은 본 발명이 적용되는 반도체 제조용 챔버를 도시한 개략도.1 is a schematic diagram showing a chamber for manufacturing a semiconductor to which the present invention is applied.

도 2는 본 발명이 적용되는 반도체 제조용 히터를 도시한 개략도. 2 is a schematic view showing a semiconductor manufacturing heater to which the present invention is applied.

도 3은 본 발명이 적용되는 반도체 제조용 가스분사장치를 도시한 개략도.3 is a schematic view showing a gas injection device for producing a semiconductor to which the present invention is applied;

도 4는 본 발명이 적용되는 반도체 제조용 챔버, 히터 및 가스분사장치가 배치된 단면도.Figure 4 is a cross-sectional view of the semiconductor manufacturing chamber, the heater and the gas injection device is applied to the present invention.

도 5는 본 발명의 실시예에 따른 마오코팅의 예시도.5 is an exemplary view of a Mao coating according to an embodiment of the present invention.

* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

1 : 챔버 2 : 히터1: chamber 2: heater

3 : 공정가스공급부 3a, 4a : 가스라인3: process gas supply part 3a, 4a: gas line

4 :세정가스공급부 5 : 가스분사장치 4: cleaning gas supply unit 5: gas injection device

11, 25, 51 : 마오코팅층 6 : 컨테이너11, 25, 51: Mao coating layer 6: Container

7 : 금속모재 8 : 전원장치7: metal base material 8: power supply

9 : 제어부 10 : 냉각수순환장치9 control unit 10 cooling water circulation device

12 : 건조장치 12: drying device

본 발명은 반도체 제조용 챔버, 히터(핫 플레이트) 및 가스분사장치(샤워헤드)의 표면에 마오코팅 방식을 이용한 세라믹코팅을 수행하여 장치의 내구성을 향상시킴과 동시에 웨이퍼 제조효율을 향상시킬 수 있도록 한 기술에 관한 것이다.The present invention is to perform a ceramic coating using a Mao coating method on the surface of the semiconductor manufacturing chamber, heater (hot plate) and gas injection device (shower head) to improve the durability of the device and at the same time improve the wafer manufacturing efficiency It's about technology.

일반적으로 반도체 제조공정에는 여러 종류의 챔버들이 사용되고 있으며, 도 1에 도시한 바와 같이, 챔버(1)의 내부에는 웨이퍼에 열원을 공급할 수 있도록 열선이 구비된 히터(핫플레이트)(2)가 안착되어 있다.In general, various types of chambers are used in a semiconductor manufacturing process, and as shown in FIG. 1, a heater (hot plate) 2 having a heating wire is installed inside the chamber 1 to supply a heat source to a wafer. It is.

이 상태에서 공정가스공급부(3)로부터 가스라인(3a)을 통해 공급되는 공정가스를 챔버(1) 내부에 주입하고, 히터(2)에 의해 소정온도로 가열하면서 히터(2) 상면에 안착된 웨이퍼에 물리적, 화학적인 압력을 가하면서 소정의 반도체 제조공정을 진행하게 된다.In this state, the process gas supplied from the process gas supply unit 3 through the gas line 3a is injected into the chamber 1, and heated to a predetermined temperature by the heater 2 and seated on the upper surface of the heater 2. The semiconductor manufacturing process is performed while applying physical and chemical pressure to the wafer.

그런데, 근래 컴퓨터와 같은 정보 매체의 급속한 보급에 부응하여 반도체 장치도 비약적으로 발전하고 있는 상황에서 그 기능면에 있어서, 고속동작과 대용량의 저장능력이 반도체 장치에 대해 요구되고 있다.However, in recent years, in response to the rapid spread of information media such as computers, semiconductor devices are also rapidly developing, and in terms of their functions, high speed operation and large capacity storage capacity are required for semiconductor devices.

이러한 요구에 부응하여 반도체 장치는 집적도, 신뢰도 및 응답 속도 등을 향상시키는 방향으로 제조 기술이 발전되고 있다. 이에 따라 상기 반도체장치의 집적도 향상을 위한 주요한 기술로서 소정의 반도체 제조공정 후 챔버 내부를 세정하게 되는 세정기술과 같은 미세 가공 기술에 대한 요구도 엄격해지고 있다.In response to such demands, manufacturing techniques have been developed for semiconductor devices to improve the degree of integration, reliability, and response speed. Accordingly, as a main technology for improving the integration degree of the semiconductor device, the demand for fine processing technology such as cleaning technology that cleans the inside of a chamber after a predetermined semiconductor manufacturing process is also increasing.

이에 부응하기 위해 소정 공정을 진행한 후 가스라인(4a)으로 연결된 세정가스공급부(4)로부터 공급되는 세정가스를 챔버(1)에 투입시켜 챔버(1) 내부 및 히터(2)를 세정하게 된다.In order to cope with this, the cleaning gas supplied from the cleaning gas supply unit 4 connected to the gas line 4a is introduced into the chamber 1 to clean the inside of the chamber 1 and the heater 2. .

그러나, 이 같이 챔버(1)에 공급되어 챔버(1) 및 히터(2)를 세정하는 세정가스 중 NF3, ClF3 등의 세정가스는 대부분 독성을 가지고 있기 때문에 (챔버(1)는 알루미늄으로 제작하고 공정이 이루어지는 진공 내부는 세라믹 등으로 오링 실링하지만) 상기 세정가스들이 웨이퍼가 안착되는 히터(2)와 반응을 일으켜 히터(2)에 불균일한 식각을 일으킴으로써 다음 공정 대상인 웨이퍼에 불량을 유발하는 요인이 되고 있다.However, among the cleaning gases supplied to the chamber 1 to clean the chamber 1 and the heater 2, cleaning gases such as NF 3 and ClF 3 are mostly toxic (chamber 1 is made of aluminum. Although the inside of the vacuum fabricated and processed is O-ring-sealed with ceramics, etc., the cleaning gases react with the heater 2 on which the wafer is seated, causing uneven etching on the heater 2, thereby causing defects in the wafer to be processed next. It becomes the factor to do.

이 같은 문제점을 해결하기 위해 종래 대부분의 반도체 장비업체에서는 AlN이라는 소재로 만든 히터를 사용하고 있는데, 상기 AlN 제품은 비용이 만만치 않으면서도 수명이 길지 않은 문제점이 있다.In order to solve this problem, most conventional semiconductor equipment companies use heaters made of AlN, and the AlN product has a problem that its life is not long even though it is not expensive.

또한, 웨이퍼 제조효율을 향상시키기 위하여 히터를 이루는 금속모재 표면에 코팅층을 형성하기도 하는데, 이 경우 코팅층에 가스 등이 유입될 수 있는 기공이 발생하여 금속모재를 부식하는 중요한 요인이 됨으로써 결과적으로 웨이퍼 제조효율을 저하시키게 된다.In addition, in order to improve wafer manufacturing efficiency, a coating layer may be formed on the surface of the metal base forming the heater. In this case, pores may be generated in the coating layer, thereby causing corrosion of the metal base, resulting in wafer fabrication. It lowers the efficiency.

본 발명은 이러한 종래 반도체 제조기술에 수반되는 문제점을 해결하기 위한 것으로 챔버, 히터 및 가스분사장치의 표면에 마오코팅층을 형성하여 장치의 내구성 및 웨이퍼 제조효율을 향상시킬 수 있도록 한 마오코팅이 적용된 반도체 제조장치를 제공하는데 그 목적이 있다.The present invention is to solve the problems associated with the conventional semiconductor manufacturing technology to form a Mao coating layer on the surface of the chamber, heater and gas injection device to improve the durability of the device and wafer manufacturing efficiency semiconductor applied Mao coating The object is to provide a manufacturing apparatus.

본 발명의 다른 목적은 일반적인 코팅을 적용할 경우 발생되는 기공에 의한 제품 불량 현상을 방지하고자 기공이 거의 없는 수준으로 알루미늄 소재에 마오코팅기술을 이용한 세라믹코팅층을 형성하여 제품의 제조원가 및 공정을 단축시킬 수 있도록 한 마오코팅이 적용된 반도체 제조장치를 제공하는데 있다.Another object of the present invention is to reduce the manufacturing cost and process of the product by forming a ceramic coating layer using Mao coating technology on the aluminum material to almost no pores to prevent product defects caused by the pores generated when applying a general coating. The present invention provides a semiconductor manufacturing apparatus to which a Mao coating is applied.

상기 목적을 달성하기 위한 본 발명의 마오코팅이 적용된 반도체 제조장치는 반도체 제조용 챔버, 챔버 내부에 설치되어 상면에 안착되는 웨이퍼에 열원을 공급하도록 알루미늄의 금속모재로 제조되는 히터 및, 상기 웨이퍼에 물리적, 화학적 압력을 가하기 위한 가스분사장치를 포함 구성된 반도체 제조장치에 있어서, 상기 챔버, 히터 및 가스분사장치를 전해질 용액이 담겨진 컨테이너에 넣은 상태에서 제어부의 제어에 의해 전원장치로부터 고압전기를 인가하고, 냉각수순환장치를 통해 냉각수를 순환시킴으로써 챔버, 히터 및 가스분사장치의 표면에 세라믹(Al2O3) 코팅된 산화막인 마오코팅층이 형성된 것을 특징으로 한다.The semiconductor manufacturing apparatus to which the Mao coating of the present invention is applied to achieve the above object is a semiconductor manufacturing chamber, a heater installed in a metal base material of aluminum so as to supply a heat source to a wafer mounted inside the chamber, and physically mounted on the wafer In the semiconductor manufacturing apparatus comprising a gas injection device for applying a chemical pressure, in the state in which the chamber, the heater and the gas injection device is put in a container containing an electrolyte solution, high-voltage electricity is applied from the power supply device under the control of the control unit, By circulating the cooling water through the cooling water circulation device is characterized in that the Mao coating layer, which is an oxide film coated with ceramic (Al 2 O 3 ) on the surface of the chamber, the heater and the gas injection device.

이하, 본 발명에 의한 마오코팅이 적용된 반도체 제조장치를 첨부도면을 참조하여 상세히 설명한다.Hereinafter, a semiconductor manufacturing apparatus to which a Mao coating according to the present invention is applied will be described in detail with reference to the accompanying drawings.

종래 구성과 동일한 부분은 동일한 부호를 명기하여 이해를 돕고자 한다.The same parts as in the prior art will be indicated by the same reference numerals for better understanding.

도 1 내지 도 4에 도시한 바와 같이 본 발명이 적용되는 히터(2)는 통상의 반도체 제조공정시 사용되는 챔버(1) 내부에 설치되는 것으로, 원형형상의 받침대(21) 및 상기 받침대(20) 보다 직경이 작게 형성되어 받침대(21) 하부에 결합되는 지지대(22)가 일체형 및 분리형으로 구성된다.As shown in FIGS. 1 to 4, the heater 2 to which the present invention is applied is installed in a chamber 1 used in a general semiconductor manufacturing process, and has a circular pedestal 21 and the pedestal 20. The support 22 is formed to have a diameter smaller than) to be coupled to the lower portion of the pedestal 21 and is composed of an integrated type and a separate type.

상기 히터(2)는 그 상면에 웨이퍼가 안착되는 것으로 금속모재인 알루미늄에 마오코팅기술을 이용하여 세라믹코팅층을 형성하여 제조된다.The heater 2 is manufactured by forming a ceramic coating layer using Mao coating technology on aluminum, which is a metal base material, on which a wafer is seated on an upper surface thereof.

또한, 본 발명이 적용되는 가스분사장치(5)는 도 1의 공정가스공급부(3)로부터 가스라인(3a)을 통해 공급되는 공정가스를 일시 저장하였다가 챔버(1) 내부에 주입함으로써 히터(2) 상면에 안착된 웨이퍼를 물리적, 화학적인 압력을 가하여 공정을 진행하도록 하는 것이다.In addition, the gas injection device 5 to which the present invention is applied temporarily stores the process gas supplied through the gas line 3a from the process gas supply unit 3 of FIG. 2) Physical and chemical pressure is applied to the wafer seated on the upper surface to proceed the process.

따라서, 본 발명에서는 상기 챔버(1), 히터(2) 및 가스분사장치(5)의 표면, 특히 챔버(1)는 그 내부면에, 히터(2)는 웨이퍼가 안착되는 상면부분에, 그리고 가스분사장치(5)는 상기 히터(2)를 향하도록 배치된 면에 소정두께의 세라믹코팅층을 형성하여 각각의 표면성질을 개선함으로써 장치의 내구성과 신뢰성을 향상시킨다.Therefore, in the present invention, the surface of the chamber 1, the heater 2 and the gas injection device 5, in particular the chamber 1 on its inner surface, the heater 2 on the upper surface portion on which the wafer is seated, and The gas injector 5 forms a ceramic coating layer having a predetermined thickness on the surface disposed to face the heater 2 to improve the surface properties of each device, thereby improving durability and reliability of the device.

MAO(Micro Arc Oxidation)란 예를 들어 Al, Mg, Zn, Ti, Zr 합금 등의 금속표면에 전기 화학적 반응을 일으켜서 산화막을 형성시키는 표면처리기술로서, 재질 표면에 전극을 연결하고 고전류를 인가하여 재질 표면에 마이크로 아크 방전을 발생시킴으로써 재질이 담겨진 전해질 용액 성분과 재질 표면간의 산화반응이 일어나도록 하여 고온산화 결정을 형성시키는 것이다. MAO (Micro Arc Oxidation) is a surface treatment technology that forms an oxide film by causing an electrochemical reaction on metal surfaces such as Al, Mg, Zn, Ti, and Zr alloys. By generating a micro-arc discharge on the surface of the material, the oxidation reaction between the electrolyte solution component containing the material and the surface of the material occurs to form high temperature oxidized crystals.

이러한 마오코팅은 저농도의 알칼리 전해액을 이용하며, 저온 플라즈마에 의해 금속모재의 표면을 산화시켜 고내식성, 초경합금 수준의 내마모성, 탁월한 절연성과 고경도성을 가지는 산화막을 형성시키는 것이다.The Mao coating uses a low concentration of alkali electrolyte and oxidizes the surface of the metal base material by low temperature plasma to form an oxide film having high corrosion resistance, cemented carbide level wear resistance, excellent insulation and high hardness.

실예로 도 5에 도시한 바와 같이 금속모재(7)를 전해질 용액이 담겨진 컨테이너(6)에 넣은 상태에서 제어부(9)의 제어에 의해 전원장치(8)로부터 고압전기를 인가하고, 냉각수순환장치(10)를 통해 냉각수를 순환시키면 다음 화학식 1과 같은 반응을 일으키면서 금속모재(7) 표면에 소정두께의 산화막이 형성된다.For example, as shown in FIG. 5, the high voltage electricity is applied from the power supply device 8 under the control of the control unit 9 while the metal base material 7 is placed in the container 6 containing the electrolyte solution. When the cooling water is circulated through (10), an oxide film having a predetermined thickness is formed on the surface of the metal base material 7 while causing a reaction as shown in Formula 1 below.

2Al+3H2O ⇒ Al2O3(Crystalline)+3H2 2Al + 3H 2 O ⇒ Al 2 O 3 (Crystalline) + 3H 2

따라서, 예를 들어 Al, Mg, Zn, Ti, Zr 합금 중 선택된 금속으로 제조된 상기 챔버(1), 히터(2) 및 가스분사장치(5)를 상기 전해질 용액이 담겨진 컨테이너(6)에 넣고 전기를 가하면 그 표면에 산화막 코팅층(마오코팅층)(11)(25)(51)이 형성되는 것이다. 이후, 마오코팅층(11)(25)(51)이 형성된 챔버(1), 히터(2) 및 가스분사장치(5) 등의 금속모재(7)는 건조장치(12)에서 건조되어 제조가 마무리된다.
본 발명은 상기와 같은 알루미늄에 마오코팅 방식을 이용하여 세라믹코팅층(Al2O3)을 형성함으로써, 표면가스발생량, 내부식성 유지시간, 표면경도, 내마모성 및 절연성 등에 우수하다.Thus, for example, the chamber 1, the heater 2 and the gas injection device 5 made of a metal selected from Al, Mg, Zn, Ti, and Zr alloys are placed in a container 6 containing the electrolyte solution. Applying electricity is to form the oxide coating layer (mao coating layer) 11, 25, 51 on the surface. Subsequently, the metal base 7, such as the chamber 1, the heater 2, and the gas injection device 5, on which the Mao coating layers 11, 25, 51 are formed, is dried in the drying device 12 to finish the manufacture. do.
According to the present invention, the ceramic coating layer (Al 2 O 3 ) is formed by using a Mao coating method on the aluminum as described above, and thus it is excellent in surface gas generation amount, corrosion resistance holding time, surface hardness, abrasion resistance, and insulation.

본 발명은 특정한 실시예를 들어 설명하였으나, 본 발명은 이에 한정하는 것은 아니며, 본 발명의 기술적사상의 범주내에서는 수정 및 변형 실시가 가능함은 물론이다. 본 발명의 범위는 특허청구범위에 기재된 바에 따른다.Although the present invention has been described with reference to specific embodiments, the present invention is not limited thereto, and modifications and variations are possible within the scope of the technical idea of the present invention. The scope of the invention is as defined in the claims.

이상에서 설명한 바와 같이, 본 발명의 마오코팅 기술을 이용하여 세라믹코팅층을 형성시키는 마오코팅이 적용된 반도체 제조장치는 다음과 같은 뛰어난 효과가 있다.As described above, the semiconductor manufacturing apparatus to which the Mao coating is applied to form the ceramic coating layer using the Mao coating technology of the present invention has the following excellent effects.

첫째, 챔버, 히터 및 가스분사장치의 표면에 알루미늄 소재로 마오코팅 기술을 이용하여 세라믹코팅층을 형성시킴으로써 고내식성, 초경합금 수준의 내마모성, 탁월한 절연성과 고경도성의 특성을 가짐으로써 장치의 내구성 및 웨이퍼 생산 불량을 줄여 제조효율을 향상시킬 수 있다.First, by forming a ceramic coating layer using Mao coating technology on the surface of chamber, heater and gas spraying device using Mao coating technology, it has high corrosion resistance, cemented carbide level abrasion resistance, excellent insulation and high hardness, and thus durability of the device and wafer production. Reduced defects can improve manufacturing efficiency.

둘째, 일반적인 에노다이징과 용사 방식의 코팅층을 형성시키는 경우에는 표면에 기공과, 내식성이 취약함으로 가스등의 유입으로 말미암아 부식과 크랙(Crack)등이 발생되는바 본 발명의 마오코팅 기술을 이용하여 알루미늄에 세라믹코팅을 실시하면 기공과 내식성 문제가 해결됨으로써 제조 원가 및 공정을 단축할 수 있다.Secondly, in the case of forming a general coating layer of anodizing and thermal spraying method, corrosion and cracks are generated due to inflow of gas due to poor porosity and corrosion resistance on the surface, using the Mao coating technology of the present invention. Applying ceramic coating on aluminum solves the pore and corrosion resistance problems, thereby reducing manufacturing costs and processes.

Claims (3)

반도체 제조용 챔버(1), 챔버(1) 내부에 설치되어 상면에 안착되는 웨이퍼에 열원을 공급하도록 알루미늄의 금속모재로 제조되는 히터(2) 및, 상기 웨이퍼에 물리적, 화학적 압력을 가하기 위한 가스분사장치(5)를 포함 구성된 반도체 제조장치에 있어서, Chamber 1 for semiconductor manufacturing, a heater 2 made of an aluminum metal base material to supply a heat source to a wafer mounted inside the chamber 1, and a gas spray for applying physical and chemical pressure to the wafer. In the semiconductor manufacturing apparatus comprised including the apparatus 5, 상기 챔버(1), 히터(2) 및 가스분사장치(5)를 전해질 용액이 담겨진 컨테이너에 넣은 상태에서 제어부(9)의 제어에 의해 전원장치(8)로부터 고압전기를 인가하고, 냉각수순환장치(10)를 통해 냉각수를 순환시킴으로써 챔버(1), 히터(2) 및 가스분사장치(5)의 표면에 세라믹(Al2O3) 코팅된 산화막인 마오코팅층(11)(25)(51)이 형성된 것을 특징으로 하는 마오코팅이 적용된 반도체 제조장치.In the state in which the chamber 1, the heater 2 and the gas injection device 5 are placed in a container containing an electrolyte solution, high-voltage electricity is applied from the power supply device 8 under the control of the control unit 9, and a cooling water circulation device Mao coating layers 11, 25, and 51, which are oxide films coated with ceramic (Al 2 O 3 ) on the surfaces of the chamber 1, the heater 2, and the gas sprayer 5 by circulating the cooling water through the chamber 10. Mao coating applied semiconductor manufacturing apparatus, characterized in that formed. 삭제delete 삭제delete
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