KR100564910B1 - 마이크로 몰드를 이용한 씨엠피(화학기계적) 연마패드 및이의 제조방법 - Google Patents
마이크로 몰드를 이용한 씨엠피(화학기계적) 연마패드 및이의 제조방법 Download PDFInfo
- Publication number
- KR100564910B1 KR100564910B1 KR1020040075916A KR20040075916A KR100564910B1 KR 100564910 B1 KR100564910 B1 KR 100564910B1 KR 1020040075916 A KR1020040075916 A KR 1020040075916A KR 20040075916 A KR20040075916 A KR 20040075916A KR 100564910 B1 KR100564910 B1 KR 100564910B1
- Authority
- KR
- South Korea
- Prior art keywords
- polishing pad
- manufacturing
- micro
- micro mold
- mold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 238000005498 polishing Methods 0.000 title claims abstract description 86
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 36
- 239000000126 substance Substances 0.000 claims abstract description 7
- 239000003999 initiator Substances 0.000 claims description 11
- 229920000642 polymer Polymers 0.000 claims description 11
- 229920006289 polycarbonate film Polymers 0.000 claims description 8
- 229920001477 hydrophilic polymer Polymers 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 5
- 229920002959 polymer blend Polymers 0.000 claims description 5
- 238000005096 rolling process Methods 0.000 claims description 5
- 238000005266 casting Methods 0.000 claims description 4
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 claims description 3
- 238000007872 degassing Methods 0.000 claims description 2
- -1 PEGMA Polymers 0.000 claims 1
- 239000002002 slurry Substances 0.000 abstract description 16
- 239000004065 semiconductor Substances 0.000 abstract description 13
- 235000012431 wafers Nutrition 0.000 abstract 4
- 230000008569 process Effects 0.000 description 24
- 239000011148 porous material Substances 0.000 description 13
- 230000008901 benefit Effects 0.000 description 8
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000003750 conditioning effect Effects 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 238000000016 photochemical curing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 2
- 229920005830 Polyurethane Foam Polymers 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000011496 polyurethane foam Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (5)
- 마이크로 몰드(micro mold)를 이용한 CMP 연마패드(chemical mechanical polishing pad) 제조방법에 있어서,연마패드(polishing pad) 면적의 1∼50%가 웨이퍼(wafer)와 접촉되고, 접촉돌기의 크기는 20∼500㎛가 되도록, 마이크로 몰드를 연마패드 형상으로 제작하는 단계;친수성 계열의 폴리머(polymer)와 우레탄(urethane)을 10∼20:80∼90 비율로 혼합하여 폴리머 혼합액을 조성하는 단계;상기 폴리머 혼합액을 3∼8㎜ 두께로 마이크로 몰드 표면에 도포한 후, 진공주형기(vacuum casting machine)를 사용하여 탈포(exclude)시키는 단계;상기 마이크로 몰드를 오븐에 넣어 50∼70℃의 온도에서 23∼25시간 동안 열경화(bake hardening)시키는 단계;상기 마이크로 몰드 표면에 롤링(rolling) 공정으로 폴리카보네이트(poly carbonate) 필름을 덮는 단계; 및UV(ultraviolet) 램프를 사용하여 상기 폴리카보네이트 필름을 경화(hardening)시켜 연마패드 제작을 완료하는 단계를 포함하는 것을 특징으로 하는 마이크로 몰드를 이용한 CMP 연마패드 제조방법.
- 제 1항에 있어서,상기 접촉돌기는 정육면체, 원기둥, 또는 삼각뿔 형상으로 형성되는 것을 특징으로 하는 마이크로 몰드를 이용한 CMP 연마패드 제조방법.
- 제 1항에 있어서,상기 친수성 계열 폴리머는, PEGMA, PEG, TMPTA를 5:4:1의 비율로 혼합하여 사용되는 것을 특징으로 하는 마이크로 몰드를 이용한 CMP 연마패드 제조방법.
- 제 1항에 있어서,상기 폴리머 혼합액은, 질량 대비 0.5∼1.5%의 개시제(initiator)를 추가로 혼합하여 사용되는 것을 특징으로 하는 마이크로 몰드를 이용한 CMP 연마패드 제조방법.
- 제 1항 내지 4항 중 어느 한 항에 따른, 마이크로 몰드를 이용한 CMP 연마패드 제조방법에 의하여 제조되는 것을 특징으로 하는 마이크로 몰드를 이용한 CMP 연마패드.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040075916A KR100564910B1 (ko) | 2004-09-22 | 2004-09-22 | 마이크로 몰드를 이용한 씨엠피(화학기계적) 연마패드 및이의 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040075916A KR100564910B1 (ko) | 2004-09-22 | 2004-09-22 | 마이크로 몰드를 이용한 씨엠피(화학기계적) 연마패드 및이의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060027086A KR20060027086A (ko) | 2006-03-27 |
KR100564910B1 true KR100564910B1 (ko) | 2006-03-30 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040075916A Expired - Lifetime KR100564910B1 (ko) | 2004-09-22 | 2004-09-22 | 마이크로 몰드를 이용한 씨엠피(화학기계적) 연마패드 및이의 제조방법 |
Country Status (1)
Country | Link |
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KR (1) | KR100564910B1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101009609B1 (ko) * | 2007-07-09 | 2011-01-21 | 코오롱인더스트리 주식회사 | 연마패드 및 그의 제조방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10329005A (ja) | 1997-06-03 | 1998-12-15 | Toshiba Corp | 研磨布及び研磨装置 |
JP2000061817A (ja) | 1998-08-24 | 2000-02-29 | Nikon Corp | 研磨パッド |
JP2004140130A (ja) | 2002-10-17 | 2004-05-13 | Nihon Micro Coating Co Ltd | 半導体基板研磨用パッドと研磨方法 |
-
2004
- 2004-09-22 KR KR1020040075916A patent/KR100564910B1/ko not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10329005A (ja) | 1997-06-03 | 1998-12-15 | Toshiba Corp | 研磨布及び研磨装置 |
JP2000061817A (ja) | 1998-08-24 | 2000-02-29 | Nikon Corp | 研磨パッド |
JP2004140130A (ja) | 2002-10-17 | 2004-05-13 | Nihon Micro Coating Co Ltd | 半導体基板研磨用パッドと研磨方法 |
Also Published As
Publication number | Publication date |
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KR20060027086A (ko) | 2006-03-27 |
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