KR100554254B1 - Lithographic apparatus, device manufacturing method, and device manufactured thereby - Google Patents

Abstract

At least partially surround at least one component selected from the group comprising a mask and substrate table MT, WT, a projection system PL and an isolated reference frame MF to control the temperature of the enclosed component. A lithographic apparatus comprising at least one temperature control member (VC, TE, TB). The surface finish of the member is selected to help the partially enclosed components maintain isothermal during operation.

Description

Lithographic apparatus, device manufacturing method, and device manufactured by this {LITHOGRAPHIC APPARATUS, DEVICE MANUFACTURING METHOD, AND DEVICE MANUFACTURED THEREBY}

1 shows a lithographic projection apparatus according to an embodiment of the invention.

The present invention

A radiation system for supplying a projection beam of radiation;

A support structure for supporting patterning means for patterning the projection beam according to a predetermined pattern;

A substrate table for holding the substrate; And

A lithographic projection apparatus comprising a projection system for projecting a patterned beam onto a target area of a substrate.

The term "patterning means" is used broadly herein as it means a means that can be used to impart a patterned cross section corresponding to a pattern to be produced in a target area of a substrate to an incident radiation beam; It may also be used herein as the term "light valve". In general, the pattern will correspond to a specific functional layer in a device formed in the target area, such as an integrated circuit or other device (see below). Examples of such patterning means include the following.

- Mask. The concept of masks is already well known in the lithography field and includes binary, alternating phase-shift and attenuated phase-shift masks and various hybrid mask types. When such a mask is placed in the radiation beam region, selective transmission (in the case of a transmissive mask) or reflection (in the case of a reflective mask) of radiation incident on the mask is achieved according to the pattern of the mask. In the case of a mask, the support structure will generally be a mask table, which may be fixed at a predetermined position within the radiation beam region in which the mask is incident and allow movement relative to the beam if necessary.

Programmable mirror arrangement. An example of such a device is a matrix-addressable surface with a viscoelastic control layer and a reflective surface. The basic principle of such a device is that incident light is reflected as diffracted light in the (eg) addressed region of the reflecting surface while incident light is reflected as undiffracted light in the unaddressed region. Using an appropriate filter, the undiffracted light can be filtered out of the reflected beam, leaving only the diffracted light behind. In this way, the beam is patterned according to the addressing pattern of the matrix-addressable surface. The required matrix addressing can be performed using any suitable electronic means. More information regarding such mirror arrangements can be obtained, for example, from US Pat. Nos. 5,296,891 and 5,523,193, which are incorporated herein by reference. In the case of a programmable mirror arrangement, the support structure can be realized as a frame or table, for example, fixed or movable as required;

Programmable LCD Array. An example of such a structure is in US Pat. No. 5,229,872, which is incorporated herein by reference. As mentioned above, the support structure in this case can be realized, for example, as a frame or table that can be fixed or movable as required.

For the purpose of simplicity of explanation, any of the remainder of this specification may, by itself, appear as an example involving a mask and a mask table. However, the general principles discussed in such examples should be understood in the broad sense of the patterning means as described above.

Lithographic projection apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In this case, the patterning means can produce a circuit pattern corresponding to an individual layer of the integrated circuit, which pattern is comprised of one or more dies on a substrate (silicon wafer) coated with a layer of radiation sensing material (resist). Can be drawn on the area. In general, an entire network of adjacent target areas is formed on one wafer, and these target areas are continuously irradiated one at a time through the projection system. Current devices employing patterning by masks on a mask table can be divided into two types of devices. In one type of lithographic projection apparatus, each target region is irradiated by exposing the entire mask pattern onto the target region at one time. Such an apparatus is commonly referred to as a wafer stepper. An alternative apparatus, commonly referred to as a step-and-scan apparatus, progressively scans the mask pattern under a projection beam in a predetermined reference direction ("scanning" direction), while in the same direction as the scanning direction. Alternatively, each target area is irradiated by synchronously scanning the substrate table in the opposite direction. Since the projection system generally has a magnification factor M (generally <1), the speed V at which the substrate table is scanned is a factor M times that at which the mask table is scanned. More detailed information relating to the lithographic apparatus described herein can be found in US Pat. No. 6,046,792, which is incorporated herein by reference.

In a manufacturing process using a lithographic projection apparatus, a pattern (eg a mask pattern) is drawn on a substrate on which a layer of radiation sensing material (resist) is applied even to a minimum portion. Prior to this imaging step, the substrate may go through a variety of procedures such as priming, resist application and soft bake. After exposure, there will be other procedures such as post-exposure bake (PEB), development, hard bake and measurement / inspection of the imaged features. This series of procedures is used, for example, as the basis for patterning individual layers of IC devices. The patterned layer is then subjected to all the various processes for finishing individual layers such as etching, ion implantation (doping), metallization, oxidation, chemical-mechanical polishing, and the like. If several layers are required, the whole process or its modification process will have to be repeated for each new layer. In the end, an array of devices will be present on the substrate (wafer). After these devices are separated from each other by a technique such as dicing or sawing, each device may be mounted on a carrier and connected to a pin. Additional information on such a process can be obtained, for example, from "Microchip Fabrication: A Practical Guide to Semiconductor Processing" (3rd edition by Peter van Zant, McGraw Hill Publishers, 1997, ISBN 0-07-067250-4). It is also employed in the present specification.

For simplicity of explanation, the projection system will hereinafter be referred to as the "lens". However, the term should be interpreted broadly as encompassing various types of projection systems, including refractive optics, reflective optics, and catadioptric systems, for example. The radiation system may also include components that operate in accordance with any of the principles of directing, shaping or controlling the projection beam of radiation, and in the following description collectively or separately for these components are referred to as "lenses." Will be mentioned. The lithographic apparatus may also be of a type having two or more substrate tables (and / or two or more mask tables). In such " multiple stage " devices, additional tables can be used in parallel, and preparatory steps can be carried out on one or more other stages, while one or more stages are being used for exposure. For example, US 5,969,441 and WO 98/40791 disclose twin stage lithographic apparatus and are employed herein.

The size of features that can be imaged on the wafer in a lithographic apparatus is defined by the wavelength of the projection radiation. In order to produce high density devices, and therefore integrated circuits with higher operating speeds, it is required to be able to image smaller features. Most lithographic projection apparatus in use today use ultraviolet light generated by mercury lamps or excimer lasers, while shorter wavelength radiation around 13 nm has been proposed. Such radiation is called extreme ultraviolet (EUV) or soft x-ray, and the usable radiation sources include synchrotron radiation from the produced laser plasma radiation source, discharge plasma radiation source or electron storage rings. The design of a lithographic projection apparatus using synchrotron radiation is described in "Synchrotron radiation sources and condensers for projection x-ray lithography," by Applied Optics, Vol. 32, No. 24, 6920-6929, by JB Murphy.

Other forms of proposed radiation sources include electron beams and ion beams. These types of beams impose the requirement with the EUV that the beam path including the mask, substrate and optical components must be maintained at a high degree of vacuum. This is to prevent the absorption and / or scattering of the beam, where a total pressure of typically less than about 10 ⁻⁶ millibars is required for this charged particle beam. Wafers can be contaminated and the optical elements of EUV radiation can be damaged by deposited layers of carbon on their surface and impose additional requirements that hydrocarbon partial pressures should generally be kept below 10 ⁻⁸ or 10 ⁻⁹ millibars. In contrast, for a device using EUV radiation, the total vacuum pressure would only need 10 ⁻³ or 10 ⁻⁴ millibars, which is typically thought of as a rough vacuum.

Further information on the use of lithographic electron beams can be obtained, for example, from EP-A 0965888 or US 5,079,122 and US 5,260,151.

 The temperature stability of some critical components is of great importance in lithographic apparatus because temperature variations can cause thermal expansion or contraction and associated imaging errors. Accordingly, it is an object of the present invention to provide an improved lithographic projection apparatus in which the components can be kept isothermal better.

According to the invention, the above and other objects

A radiation system for supplying a projection beam of radiation;

A support structure for supporting patterning means for patterning the projection beam according to a predetermined pattern;

A substrate table for holding the substrate; And

A projection system for projecting the patterned beam onto a target area of the substrate

An isolated reference frame equipped with a position sensor for at least one of the patterning means and the substrate;

A vacuum chamber surrounding at least one component selected from the group comprising the support structure, the substrate table, the projection system and the isolated reference frame; And

A temperature control member at least partially surrounding one of said components in said vacuum chamber, said temperature control member absorbing and releasing-suppressing at least partly to keep said one component substantially isothermal during operation; This is accomplished in a lithographic projection apparatus formed of a material including a surface finish.

Absorption and release of the surface are related to each other. Low absorption indicates low release and vice versa; Absorption and release coefficients will be the same value. When absorption and release inhibiting surface finishes are provided to the temperature control member on the surface facing the enclosed component, the temperature change of the temperature control member does not create a heat load on the component through radiation because the emission coefficient is very low or Almost no composition, which means that the control member radiates little or no energy and the temperature of the component is not affected. On the other hand, if the temperature control member faces away from the enclosed component, or if an absorbent and release inhibiting finish is provided on the surface facing towards the external heat source, the control member will not absorb the energy radiated by the heat source. Will not change or hardly change. Since the temperature of the control member does not change, no heat load on the enclosed components will appear. The release coefficient of the absorption and release inhibiting surface finish is preferably less than 0.1, more preferably less than 0.05. This surface finish will be obtained by applying a mirror-like surface finish.

In a preferred embodiment, at least one of the components and at least part of the surface of the temperature control member facing towards the internal heat source of the vacuum chamber substantially comprises an absorption and release promoting surface finish. For this embodiment, the temperature of the component can be adjusted by the radiation incident from the control member. On the other hand, any radiation from the heat source towards the absorption and release promoting surface finish can be absorbed and absorbed by the surface of the temperature control member. In this way, the heat source is prevented from being reflected by the surface and causing heat loads on the critical components. Preferably, the release coefficient of the absorption and release promoting surface finish is at least 0.9 and more preferably at least 0.95. Such surface finishes can be used by applying a black surface finish.

It is also desirable for the temperature control member to have a large thermal conductivity of at least 100 W / milliKelvin so as to keep the temperature control member within a predetermined temperature range.

The temperature control member may be a wall of the vacuum chamber, a separate enclosure away from the vacuum chamber wall or a heat shield over the opening for the vacuum pump. Such control members can also be combined.

 According to another form of the invention

Providing a substrate at least partially applied by a layer of radiation sensing material;

Providing a projection beam of radiation using a radiation system;

Using patterning means for imparting a cross-sectional pattern to the projection beam;

Projecting a patterned beam of radiation onto a target area of the layer of radiation sensing material, and

Providing at least one temperature control member to at least partially surround a component provided in the vacuum chamber to substantially maintain the component isothermal, the temperature control member at least partially absorbing and releasing A device manufacturing method is provided that is made of a material including a containment surface finish.                         

Although specific reference may be made to the use of the device according to the invention in the manufacture of an IC herein, it should be clearly understood that such device may have many other possible applications. For example, the device may include integrated optical systems, guidance and detection patterns for magnetic domain memory, liquid-crystal display panels, thin-film magnetic heads, and the like. It can be used in the manufacturing process of. Those skilled in the art, within the context of these alternative applications, the terms "reticle", "wafer" or "die" used herein are more general terms such as "mask", "substrate" and "target area", respectively. It should be taken into account that it is being replaced.

As used herein, the terms “radiation” and “beam” refer to particle beams, such as ion beams or electron beams, as well as ultraviolet and extreme ultraviolet (EUV or XUV) (eg having wavelengths of 365, 248, 193, 157 or 126 nm). It is used to encompass all forms of electromagnetic radiation, including radiation (eg having a wavelength in the range of 5-20 nm).

1 shows a lithographic projection apparatus according to a particular embodiment of the invention. The device is:

Radiation system Ex, IL for supplying projection beam PB of radiation (e.g. EUV radiation). In this particular case, the radiation system also includes a radiation source LA;

A first object table (mask table) MT provided with a mask holder for holding a mask MA (e.g. a reticle) and connected to first positioning means for accurately positioning the mask with respect to the item PL;

A second object table (substrate table) provided with a substrate holder for holding the substrate W (e.g., a resist coated silicon wafer) and connected to second positioning means for accurately positioning the substrate with respect to the item PL. (WT);

A projection system (" lens ") PL for drawing the irradiated portion of the mask MA on the target area C (e.g. comprising one or more dies) of the substrate W (e.g. Reflection projection system).

As mentioned above, the device is reflective (ie with a reflective mask). In general, however, the device may be of a transmissive type (with a transmission mask, for example). Alternatively, the apparatus may use another kind of patterning means, such as a programmable mirror arrangement of the type described above.

The radiation source LA (for example produced laser plasma radiation source or discharge radiation source) produces a radiation beam. The beam is supplied to the illumination system (illuminator) IL directly or after crossing a conditioning means such as, for example, a beam expander. The illuminator IL comprises adjusting means for setting the outer and / or inner radial magnitude (commonly referred to as "σ-outer" and "σ-inner", respectively) of the beam intensity distribution. It also typically includes various components such as integrators and capacitors. In this way, the beam PB incident on the mask MA has a uniformity and intensity distribution in its cross section.

With reference to FIG. 1, the radiation source LA lies within the housing of the lithographic projector (as is often the case, for example, when the radiation source LA is a mercury lamp), but it is made far away from the lithographic projection apparatus. The emitted radiation beam may be brought into the device (eg by means of a suitable directional mirror). This latter scenario is often the case when the radiation source LA is an excimer laser. The present invention and claims encompass both of these cases.

The beam PB then passes through a mask MA, which is fixed to a mask holder on a mask table MT. The beam PB selectively reflected by the mask MA passes through the lens PL focusing the beam PB on the target region C of the substrate W. By means of the second positioning means (and interferometer measuring means IF), the substrate table WT can be accurately moved to position different target areas C in the path of the beam PB, for example. Similarly, the first positioning means can be used to accurately position the mask MA with respect to the path of the beam PB, for example after mechanically withdrawing the mask MA from the mask library or during scanning. Can be. In general, the movement of the objective tables MT, WT, although not clearly shown in FIG. 1, is performed by the long stroke module (coarse positioning) and the short stroke module (fine positioning). It is realized with help. However, in the case of a wafer stepper (as opposed to a step-and-scan apparatus), the mask table MT may be connected or fixed only to a short stroke actuator.

The apparatus described above can be used in two different modes:

1. In the step mode, the mask table MT is basically kept stationary, and the entire mask image is projected to the target area C at once (ie, with a single "flash"). The substrate table WT is then shifted in the x and / or y directions so that different target areas C can be irradiated by the beam PB; And

2. In the scan mode, the same scenario applies, except that the predetermined target area C is not exposed in a single "flash". Instead, the mask table MT is movable in a predetermined direction (so-called " scanning direction &quot;, for example, y direction) at a speed of ν so that the projection beam PB scans all parts of the mask image, At the same time, the substrate table WT simultaneously moves in the same direction or the opposite direction at a speed V = Mv, where M is the magnification of the lens PL (usually M = 1/4 or M = 1/5). In this way, a relatively large target area C can be exposed without degrading the resolution.

The lithographic projection apparatus of this example comprises a vacuum chamber VC where the beam PB is incident on the mask MA and subsequently on the target area of the substrate W.

To support sensitive components such as interferometers (IF) and other position sensors and to isolate them from vibration, a so-called "metrology frame" (MF) provides an isolated reference frame that is mechanically separated from the main unit structure. do. Although the reference frame can be made of a material with a very low coefficient of thermal expansion, such as Invar (TM), the metrological frame and attached components must maintain an isothermal maximum temperature difference of less than 0.1 ° C.

The lithographic projection apparatus of this embodiment includes an enclosure, such as a temperature control member, surrounding a given component to affect the temperature of the component surrounded by the enclosure. Typical components surrounded by such enclosures include first and second object tables, projection systems and metrological frames. In this embodiment, the enclosure consists at least in part of enclosures in the vacuum chamber VC. It can be seen that there is another enclosure (TE) between a portion of the vacuum chamber wall and the temperature-critical component. The drawings are for illustrative purposes only. In practical situations, this thermal enclosure (TE) can completely enclose this important component.

The vacuum pump VP is associated with a vacuum chamber and can be at a very high temperature. For example, the rotor of the turbo-molecular pump may be at a high temperature, such as 80 ° C. Providing a heat shield TB like other heat control members across the opening to the vacuum pump helps the components in the vacuum chamber to maintain isothermal.

According to the invention, a special surface finish is applied to the temperature control member in the lithographic projection apparatus in order to control the temperature of the component at least partially surrounding the temperature control member. The critical member may be an enclosure, a vacuum chamber wall or a member of a heat shield as described above.

The temperature control member is provided as a mirror surface finish by, for example, polishing. This surface finish provides an absorbent and release inhibiting surface finish having a low release or preferably a release coefficient of less than 0.1 or more preferably less than 0.05. Also preferably, the mirror surface finish is applied to a material which itself has a low emission coefficient. The mirror surface finish is on both sides of the interior of the vacuum chamber (VC) wall, outside of the enclosure (TE) towards the vacuum chamber wall, and on both sides of the shield (TB) (facing the vacuum pump (VC) and facing the enclosure (TE)). Is applied to.

The result as described above is that the thermal changes in the vacuum chamber walls are not radiated onto the partially enclosed components; Accurate temperature control of the enclosure is not very important because it does not radiate much energy. In this embodiment, the vacuum chamber wall is suitably at most 0.1 and more preferably less than 0.05 in terms of the emissivity, that is, the ratio of the ejection force of the surface at a predetermined temperature to the ejection force of the blackbody having the same temperature and the same ambient conditions. Have a surface prepared not high. In this way, the maximum temperature difference in the partially enclosed components can be kept as low as 0.1 ° C., which is a requirement for certain lithographic projection apparatus.

However, the heat source in the vacuum chamber may have their radiation reflected by the mirror vacuum chamber on the temperature critical component. Therefore, a separate enclosure (TE) with a surface finish that promotes absorption is employed. An absorption (and release) promoting surface finish of the temperature control member TE is applied to the surface facing inwardly of the vacuum chamber. Radiation from the heat source will not be absorbed and radiated and will not impose a heat load on other components. The black surface finish will provide a release coefficient with high release or preferably with a value above 0.9 or even above 0.95. Also suitable for vacuum coating of SiO ₂ provides a high emission factor of about 0.9. In this way, the temperature of the partially enclosed component can also be controlled to be equal to the temperature of the enclosure TE because the enclosure efficiently radiates and absorbs radiation irradiated by the enclosed component efficiently.

The face of the enclosure TE facing the vacuum chamber wall is provided with an absorptive (mirror) surface finish to reflect any residual radiation from the vacuum chamber wall VC or the heat shield TB. In this way, better temperature control is obtained. For better temperature control, the heat shield TB is provided with absorption and release inhibiting surface finishes on both sides such that they do not absorb radiation from the vacuum pump VP and do not emit towards the enclosure TE.

In addition, the enclosure TE may be fabricated to tightly enclose the temperature critical component in the vacuum chamber. In addition, the temperature critical component may be provided with an absorption promoting surface finish for efficient temperature control by an absorption inhibiting surface finish or enclosure (TE) to reflect residual heat load radiation.

It has also been found that materials with thermal conductivity greater than 100 W / mK have the advantageous result of keeping the temperature of the enclosure more uniform. It is preferable that the material of the temperature control member has a thermal conductivity of greater than 200 W / mK. Examples of such materials are aluminum, copper and alloys thereof. It is also advantageously employed for any means for regulating the temperature of the temperature control member, such as the provision of passages in the temperature control member for the passage of a fluid such as water.

While specific embodiments of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. The description is not intended to limit the invention.

The present invention provides an improved lithographic projection apparatus in which such components can maintain isothermal better because temperature variations in the temperature stability of some critical components can cause thermal expansion or contraction and associated imaging errors.

Claims (19)

In a lithographic projection apparatus, A radiation system for supplying a projection beam of radiation; A support structure for supporting patterning means for patterning the projection beam according to a predetermined pattern; A substrate table for holding the substrate; A projection system for projecting the patterned beam onto a target area of the substrate; An isolated reference frame equipped with a position sensor for at least one of said patterning means and said substrate; A vacuum chamber surrounding at least one component selected from the group comprising the support structure, the substrate table, the projection system and the isolated reference frame; And At least one temperature control material at least partially surrounding one component in the vacuum chamber, the at least partially absorbing and releasing-suppressing surface finish to keep the one component substantially isothermal during operation A lithographic projection apparatus comprising the temperature control member at least partially formed of a material. The method of claim 1, And the absorptive and release inhibiting surface finish comprises a substantially mirror surface finish. The method according to claim 1 or 2, A lithographic projection apparatus according to claim 1, wherein the emission coefficient of the absorption and release inhibiting surface finish is less than 0.1. The method of claim 3, And said emission coefficient of said absorption and emission inhibiting surface finish is less than 0.05. The method according to claim 1 or 2, And at least a portion of a surface of a temperature control member facing at least one of said component and a heat source inside said vacuum chamber substantially comprises an absorption and emission promoting surface finish. The method of claim 5, A lithographic projection apparatus according to claim 1, wherein said absorption and release promoting surface finish comprises a black surface finish. The method of claim 5, A lithographic projection apparatus according to claim 1, wherein the emission coefficient of the absorption and emission promoting surface finish is at least 0.9. The method of claim 7, wherein And said emission coefficient of said absorption and release promoting surface finish is at least 0.95. The method according to claim 1 or 2, And the surface of said temperature control member comprising said absorption and release inhibiting surface finish is at least partially enclosed by said temperature control member and directed towards an external heat source of space comprising said component. The method according to claim 1 or 2, Lithographic projection apparatus, characterized in that the thermal conductivity of the material of the temperature control member is at least 100 W / mK. The method according to claim 1 or 2, And said temperature control member comprises one material selected from the group consisting of aluminum, aluminum alloys, copper and copper alloys. The method according to claim 1 or 2, And the temperature control member is formed at least in part by a wall of the vacuum chamber. The method according to claim 1 or 2, And the temperature control member comprises an enclosure provided away from the wall of the vacuum chamber. The method according to claim 1 or 2, And said temperature control member comprises a wall of thermal baffles provided over an opening to a vacuum pump. The method according to claim 1 or 2, And said support structure comprises a mask table for supporting a mask. The method according to claim 1 or 2, And said radiation system comprises a radiation source. The method according to claim 1 or 2, And said projection beam comprises EUV radiation having a wavelength in the range of 5-20 nm. In the device manufacturing method, Providing a substrate at least partially coated by a layer of radiation sensing material; Providing a projection beam of radiation using a radiation system; Imparting a cross-sectional pattern to the projection beam using patterning means; Projecting the patterned beam of radiation onto a target area of the layer of radiation sensitive material; And Providing at least one temperature control member at least partially made of a material having an absorbent and release inhibiting surface finish to at least partially enclose the component provided in the vacuum chamber to substantially maintain the component isothermally The device manufacturing method characterized by the above-mentioned. A device manufactured according to the method of claim 18.

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