JP4065528B2 - Constant temperature vacuum container and exposure apparatus using the same - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a thermostatic vacuum container that maintains a constant and uniform temperature of an object to be stored in a reduced pressure or vacuum environment. The present invention is suitable, for example, for a thermostatic vacuum container for housing an ultra-precision member and an optical system that are extremely disliked by temperature changes caused by fluctuations in the internal atmosphere and heat generated by an exhaust pump or the like. The present invention also relates to an exposure apparatus that uses the constant temperature vacuum vessel.
[0002]
[Prior art]
A conventional thermostatic container has played the role of a thermostatic container by circulating a temperature-adjusted gas refrigerant in the container and setting the temperature of the device in the container to the same temperature as the gas refrigerant. An exposure apparatus EO using a thermostatic container will be described as an example of a conventional thermostatic container (see, for example, Patent Document 1). Here, FIG. 9 is a schematic sectional view showing a thermostatic container in the exposure apparatus EO. The exposure apparatus E0 is disposed in a chamber 101a constituted by a housing 101, an exposure unit 114 including an illumination optical system, a projection lens system, a reticle stage and a wafer stage (not shown), and a side of the exposure unit 114. A reticle library 113 and a carrier table 111 on which the wafer carrier 112 is placed are provided.
[0003]
  On one side wall of the casing 101, an opening / closing door is provided at a portion corresponding to the reticle library 113.115aReticle entrance / exit with115And a door corresponding to the carrier base 111 is opened and closed.116aEntrance / exit for wafers116Is provided.
[0004]
In addition, a ceiling space portion 102 partitioned by a filter 102a for blowing clean air in a downflow is formed in the upper portion of the chamber 101a in the drawing. An underfloor space 104 partitioned by a floor 103 having a plurality of exhaust ports is formed in the lower part of the chamber 101a in the figure. The ceiling space portion 102 and the underfloor space portion 104 are communicated with each other by a circulation duct 105 in which a temperature controller 106 is interposed. Thereby, the air introduced into the ceiling space portion 102 by the air introduction fan 107 becomes clean air by the filter 102a and is blown out in a downflow, and the air collected in the underfloor space portion 104 by the exhaust fan 108 is After the temperature is adjusted to a predetermined temperature by the temperature controller 106 of the circulation duct 105, the temperature is sent to the ceiling space 102 by the circulation fan 109 and recirculated.
[0005]
In this way, the temperature of the exposure unit 114 that extremely dislikes temperature changes is kept constant by circulating temperature-controlled air in the chamber.
[0006]
[Patent Document 1]
Japanese Patent Laid-Open No. 10-154655
[0007]
[Problems to be solved by the invention]
In the conventional example, the temperature of the device in the container is controlled via the gas. However, when the inside of the container needs to be evacuated, the temperature of the device cannot be controlled via the gas. Particularly, in an exposure apparatus that projects and exposes an object to be processed such as a single crystal substrate for a semiconductor wafer or a glass substrate for a liquid crystal display (LCD) using extreme ultraviolet (EUV) light, EUV light is exposed to the air. In order to prevent absorption and attenuation, the optical system must be maintained in a vacuum atmosphere.
[0008]
When the gas serving as the heat medium is not present, heat transfer occurs in a portion that is in contact between the apparatus and the container, and heat transfer occurs due to radiation in a portion that is not in contact. In general, when a precision device is installed, fixing by a three-point support is often performed so as not to rattle or to be affected by relative deformation between the device and the container. Therefore, the contact area between the apparatus and the container is very small, and heat transfer due to conduction is small. Therefore, even if the temperature can be controlled by heat conduction, only a part of the in-container device can be temperature-controlled, and it is difficult to keep the entire device at a uniform temperature.
[0009]
  From the above, it can be said that in a vacuum thermostatic container, it is preferable to use radiation as a means for keeping the apparatus in the container at a constant temperature. For this reason, as shown in FIG. 8, the structure which adjusts temperature of the whole container uniformly and uniformly, and equilibrates the apparatus in a container to the container 7 temperature by the heat transfer by radiation is considered. Here, FIG. 8 is a schematic cross-sectional view showing the configuration of a constant temperature vacuum vessel that can be considered from the prior art. In FIG. 8, 1 is an object to be temperature-adjusted (here, a substrate as an exposure object), 2 is a top plate, 3 is a guide, 4 is a drive unit, 5 is a stage surface plate, 6 is a refrigerant pipe, 7 is a vacuum vessel, 8 is an optical system device, 9 is a heat insulating support member, 10 is a refrigerant pipe (for radiation shielding plate)12 is an exhaust device.
[0010]
  However, in the case where the thermostatic container also serves as a vacuum container, when the exhaust device 12 for maintaining the vacuum is connected and the exhaust device 12 is constituted by a turbo molecular pump or the like, a large heat is generated and the container is generated. Direct attachment to 7 is common. It is also known that an electron gun generates a lot of heat in an EB exposure apparatus or the like. Therefore, the temperature distribution of the container 7 is likely to occur due to the influence of these heat generations. Vacuum containers are generally thicker due to pressure resistance, so the heat capacity is large. Therefore, keeping the temperature constant can be easily achieved, but the temperature non-uniformity caused by the heat generation factor can be suppressed with high accuracy. Difficult to do. Also, depending on the installation location, the installation atmosphereBig temperatureThe cooling of the chamber cannot cope with the change, and the temperature of the chamber may become uneven.
[0011]
Further, it is common for some precision devices to dislike temperature changes extremely. For example, in an exposure apparatus, a temperature change during exposure is allowed only at a level of 0.1 m ° C. to 1 m ° C. around the substrate as an exposure target. A temperature change beyond this causes uneven resolution. Therefore, there is a need for a thermostatic vacuum vessel that can make the apparatus temperature uniform and constant regardless of the installation atmosphere as in the present invention.
[0012]
Accordingly, the present invention provides a constant temperature vacuum vessel that more effectively prevents temperature change of an object accompanying exhaustion or replacement of an object stored in a reduced pressure or vacuum environment, and an exposure apparatus using the same. For exemplary purposes.
[0013]
[Means for Solving the Problems]
  As one aspect of the present inventionNoContainer holds the objectDocontainersmellAndSaidProvided in at least part of the containerElementWhen,Said memberWith a temperature control mechanism for temperature control.The member is attached to the inside of the container via a heat insulating member, and the temperature of the object is kept constant in a reduced pressure or vacuum environment.It is characterized by that.
  An exposure apparatus according to a second aspect of the present invention is an exposure apparatus that exposes a substrate.
A positioning device arranged inside the container for determining the position of the substrate, a member attached to the inside of the container via a heat insulating member, and a temperature adjusting mechanism for adjusting the temperature of the member; The inside of the container is characterized by a reduced pressure or a vacuum environment.
[0014]
Other objects and further features of the present invention will become apparent from the preferred embodiments described below with reference to the accompanying drawings.
[0015]
DETAILED DESCRIPTION OF THE INVENTION
  FIG. 1 is a view showing a configuration of an in-vacuum positioning device using the constant temperature vacuum container of the present embodiment. Unlike the container 7 shown in FIG. 8, the container 7 abolished the refrigerant pipe 10 and attached the temperature adjusting plate 11 to the container 7 via the heat insulating support member 9. Alternatively, similar to FIG. 8, a refrigerant pipe 10 for controlling the temperature of the container may be used in combination.Here, 11 is not necessarily a plate-like member, and may be a columnar shape or a box shape. However, since a member having a larger surface area than the weight (which may be a volume) is preferable, a plate-like member is preferable.
[0016]
The temperature adjusting plate 11 is in close contact with the refrigerant pipe 10, and the temperature of the temperature adjusting plate 11 is adjusted accurately and uniformly by flowing the refrigerant with precisely adjusted temperature through the refrigerant pipe 10. As shown in FIG. 4, the refrigerant pipe 10 is stretched so as to prevent temperature unevenness as much as possible in the entire temperature control plate. Here, FIG. 4 shows a schematic plan view of the temperature control plate 11 of the constant temperature vacuum container shown in FIG. Further, since the exhaust device 12 such as a turbo molecular pump is normally high in temperature, it is recommended that the temperature control plate 11 as shown in FIG. 4 is opposed to the exhaust port so that the heat radiation generated therefrom does not enter the container 7. Although it is good from a viewpoint, since it becomes a shape which plugs an exhaust port, the efficiency of the exhaust apparatus 12 will fall. Therefore, a temperature control plate as shown in FIG. 5 is also conceivable depending on the balance between the exhaust efficiency and the thermal specifications. Here, FIG. 5 is a schematic plan view of another temperature control plate of the thermostatic vacuum container shown in FIG. That is, on the premise that the heat radiation emitted from the exhaust device 12 leaks to some extent, a hole is made in the portion of the temperature control plate that faces the exhaust port. The size of this hole should be determined according to the balance between exhaust efficiency and thermal specifications.
[0017]
The temperature of the temperature adjusting plate 11 is set to the same temperature as the set temperature (for example, 23 ° C.) of the entire positioning device. Here, the temperature adjustment of the temperature adjustment plate 11 can be performed using a Peltier element to further increase the temperature adjustment accuracy. However, in the present invention, if the temperature adjustment with the accuracy required by the temperature adjustment plate 11 can be realized, It does not depend on the adjustment method
[0018]
The temperature adjustment mechanism of the present embodiment connects a temperature sensor (not shown) and a heater device to the temperature adjustment plate 11, and introduces cooling water or a refrigerant (alcohol, fluorine-based refrigerant, chlorofluorocarbon, etc.) into the temperature adjustment plate 11. The temperature of the temperature control plate 11 is controlled to a predetermined temperature. For the temperature control plate 11, for example, a material having good thermal conductivity such as stainless steel and easily processing a flow path through which cooling water or the like flows is selected.
[0019]
By adopting such a configuration, even if the temperature change of the container 7 greatly occurs, the fluctuation of the radiant heat caused by the change is absorbed by the temperature control plate 11 under temperature control. Therefore, the temperature change of the container 7 has no influence on the entire positioning device including the positioning object 1. That is, it becomes possible to completely shield the thermal disturbance from the container 7.
[0020]
Furthermore, since the temperature of the temperature adjusting plate 11 is set to be the same as the temperature of the positioning object 1 or the entire positioning device, if the temperature of a part or the whole of the positioning device is higher or lower than the set temperature, By heat transfer due to radiant heat with the adjustment plate, the temperature is balanced uniformly in the direction approaching the radiant plate temperature, and the entire positioning device is uniformly and uniformly controlled.
[0021]
  Here, not the container 7 but the temperature controlsectionThe reason why the refrigerant pipe is moved around the plate 11 is that temperature adjustment is very easy. The entire surface of the container 7 is in contact with the installation atmosphere (gas), the heat transfer area is large, and the temperature of the container 7 is very easily changed to the ambient temperature. On the other hand, temperature controlsectionSince the plate 11 is installed in the chamber and is supported by a heat insulating material with respect to the container 7, there is almost no heat transfer, so that temperature adjustment is very easy.
[0022]
In order to increase these effects, the emissivity of the surface of the container 7 and the surface of the temperature control plate 11 on the container side is reduced so that the heat transfer between the container 7 and the temperature control plate 11 is reduced. Further, in order to promote the heat transfer between the temperature adjusting plate 11 and the positioning device, the emissivity of the surface of the positioning device facing the temperature adjusting plate 11 and the surface of the temperature adjusting plate 11 on the positioning device side is configured to be high. . However, if there is a part where the heat generation or heat absorption element exists in the device in the container and the temperature is uneven, the emissivity of the heat generation or heat absorption part and its surroundings is low so that this part does not adversely affect the peripheral part. is doing.
[0023]
For adjusting the emissivity, for example, when the emissivity is lowered to about 0.4 or less, it is constituted by a polished metal surface, etc., and when the emissivity is increased to, for example, about 0.8 or more, polyimide is used. And PEEK, such as a resin with little degassing, glass, or a metal having a thick oxide film. If these materials cannot be used due to problems such as rigidity, these materials may be attached to the surface by means such as adhesion or vapor deposition.
[0024]
Specifically, it is preferable that the emissivity of the surface of the temperature adjusting plate 11 facing the container 7 or the inner surface of the container 7 facing the temperature adjusting plate 11 is adjusted to be about 0.4 or less. By setting the emissivity low, it is possible to prevent a temperature change from being radiated between the temperature control plate and the inner surface of the thermostatic vacuum container and adversely affecting both. Similarly, it is preferable that the emissivity of the surface of the temperature adjusting plate 11 facing the object 1 or the surface of the object 1 facing the temperature adjusting plate 11 is adjusted to be about 0.8 or more. Moreover, it is preferable that the emissivity of the surface where the temperature of the constant temperature vacuum vessel 7 is kept constant is adjusted to about 0.8 or more. By setting the emissivity high, radiation can be promoted and the temperature of the object and the container can be kept constant.
[0025]
FIG. 2 shows a modification of FIG. This figure shows an example in which the temperature control plate 11 is installed only in the portion where the temperature unevenness is generated in the container 7.
[0026]
As a vacuum container, an exhaust device 12 such as a turbo molecular pump is usually directly attached to the container, and the heat generation causes temperature unevenness of the container 7, thereby causing a temperature change of the device in the container. Will worsen. For this reason, the temperature adjusting plate 11 is arranged around the portion where the temperature unevenness is not allowed in the container 7. Regarding the part where the temperature control plate 11 is not installed, the temperature of the inner wall of the container is within an allowable range as a thermostatic container, and thus the temperature control plate 11 is not particularly installed. In this way, when a heating element such as the exhaust device 12 is installed in the container 7, the temperature control plate is installed only in the vicinity where the temperature rises in the container due to the heat generation, so that it can be easily used as a constant temperature container. It becomes possible to fulfill the function. At this time, the inner wall of the container where the temperature control plate is not installed may be configured to have a high emissivity in order to increase the efficiency of the thermostatic container.
[0027]
Hereinafter, an exposure apparatus according to an embodiment of the present invention will be described with reference to FIG. The exposure apparatus is a projection exposure apparatus that performs step-and-scan exposure using EUV light (for example, wavelength 13.4 nm) as exposure illumination light. The exposure apparatus includes a light source unit 100, an illumination optical system 200, a mask 300, a projection optical system 400, and an object to be processed 500. The exposure apparatus further includes a mask stage 350 on which the mask 300 is placed and a wafer stage 550 on which the workpiece 500 is placed. The mask stage 350 and the wafer stage 550 are connected to a control unit (not shown). Drive controlled. The light source unit 100 and the illumination optical system 200 constitute an illumination device. Here, FIG. 3 is a schematic view of the exposure apparatus.
[0028]
Since EUV light has a low transmittance with respect to the atmosphere, the exposure apparatus stores the light source unit 100 in the vacuum container 12 and the remaining components 200 to 550 in the vacuum container 14. However, the present invention includes at least the case where the optical path through which EUV light passes is maintained in a vacuum atmosphere. Here, the isothermal vacuum container described above with reference to FIGS. 1 and 2 is applied to the vacuum containers 12 and 14.
[0029]
The light source unit 100 generates EUV light from the plasma emission point 120. The light source unit 100 includes a nozzle 130 that ejects droplets that are targets for plasma generation, a droplet recovery unit 140 that recovers and reuses droplets that have not been irradiated with the excitation laser beam, and a spheroid mirror 150. And a filter 170.
[0030]
High-power excitation pulsed laser light 110 emitted from an excitation laser unit including an excitation laser light source and a condensing optical system (not shown) is configured to be condensed at the position of the light emitting point 120. In addition, droplets (for example, Xe) that are targets of the laser plasma light source are ejected continuously from the nozzle 130 at regular time intervals and pass through the condensing point 120. When the droplet ejected as described above reaches the position of 120, the excitation pulse laser beam 110 irradiates the droplet to generate a high-temperature plasma emission point 120, and thermal radiation from this plasma is generated. EUV light is generated radially.
[0031]
  The EUV light emitted from the plasma emission point 120 is collected by the spheroid mirror 150 and taken out as an EUV light beam 160. The spheroid mirror 150 is formed with a reflective multilayer film for efficiently reflecting EUV light, and a high temperature plasma.Luminous pointIn order to partially absorb the radiant energy from 120, the temperature becomes high during exposure. For this purpose, a material such as a metal having high thermal conductivity is used as a material, and a cooling means (not shown) is provided to constantly cool the material. The filter 170 cuts plasma and scattered particles (debris) from the periphery, or cuts a wavelength unnecessary for EUV exposure. The EUV light beam 160 is introduced into the illumination optical system 200 of the vacuum container 14 from the window 210 provided on the boundary surface between the vacuum containers 12 and 14. The window 210 has a function of passing the EUV light beam 160 while maintaining a vacuum.
[0032]
The illumination optical system 200 uniformly illuminates the mask 300 with arcuate EUV light corresponding to the arcuate field of view of the reflective reduction projection optical system 100, and rotates paraboloidal mirrors 220 and 260, paraboloidal mirror 240, and so on. , Reflective integrators 230 and 250, a masking blade 270, and relay optical systems 282 to 286 (hereinafter referred to as “280” unless otherwise specified).
[0033]
The paraboloid mirror 220 reflects the EUV light beam 160 introduced from the window 210 to form a parallel light beam 222. Next, the EUV light 222 that has become a parallel light beam enters a reflective convex cylindrical surface integrator 230 having a plurality of convex cylindrical surfaces 232. The EUV light radiated from the secondary light source formed by each cylindrical surface 232 of the integrator 230 is condensed by the parabolic mirror 240 and superimposed, so that the reflective integrator 250 having a plurality of convex cylindrical surfaces 252 is formed. The cylindrical alignment direction can be illuminated with a substantially uniform intensity distribution.
[0034]
The reflective integrator 230 has a plurality of cylindrical surfaces, and illuminates the reflective integrator 250 uniformly with the rotating paraboloidal mirror 240 (that is, substantially Koehler illumination as will be described later). Thereby, it is possible to make the light intensity distribution in the radial direction of the arc illumination area, which will be described later, uniform, and make the effective light source distribution from the reflective integrator 250 uniform. The reflective integrators 230 and 250 may be replaced with fly-eye mirrors in which a large number of minute convex or concave spherical surfaces having a repeating period are two-dimensionally arranged.
[0035]
The reflective integrator 250 has a plurality of cylindrical surfaces and uniformly illuminates the mask surface. When a substantially parallel EUV light beam is incident on the reflective integrator 250, a secondary light source is formed by the integrator 250, and the angular distribution of EUV light emitted from the secondary light source becomes conical. Next, the EUV light is reflected by the reflecting mirror with the secondary light source position as a focal point to illuminate the mask 300 or a surface conjugate with the mask 300, thereby enabling arc-shaped illumination.
[0036]
The parabolic mirror 240 is disposed so that the focal position thereof substantially coincides with the reflecting surface of the integrator 230, and the reflected light from each cylindrical surface on the reflecting surface is superimposed on the reflecting surface of the integrator 250. Is set to The parabolic mirror 240 only needs to have a parabolic cross section because the light intensity distribution in the longitudinal direction of the cylindrical reflecting surface of the integrator 250 needs to be uniform. However, the parabolic mirror 240 does not necessarily need to be a rotating parabolic mirror. . As described above, the parabolic mirror 240 is arranged on the reflecting surface of the integrator 250 so as to be almost Koehler illumination.
[0037]
The EUV light beam reflected by the integrator 250 is collected by the rotary paraboloid mirror 260 to form a uniform arc illumination region on the masking blade 270 disposed at the focal length f.
[0038]
The masking blade 270 includes a light shielding portion made of a material that absorbs EUV light and a desired arc-shaped opening that is optimal for exposure. The masking blade 270 blocks unnecessary stray light that does not contribute to arc illumination, and by setting a desired slit width or partially changing the slit width by a slit width variable mechanism (not shown), the illuminance unevenness is improved satisfactorily. It has a function to correct.
[0039]
The EUV light beam that has passed through the arc-shaped opening of the masking blade 270 is converted to a desired magnification by the relay optical system 280, and then an arc illumination area is formed on the reflective mask 300 held on the mask stage 350. Perform arc lighting. The relay optical system 280 formed from a plurality of mirror surfaces has a function of enlarging or reducing the arc shape at a predetermined magnification.
[0040]
The reflective mask 300 has a transfer pattern in which a non-reflective portion made of an EUV absorber or the like is provided on a multilayer mirror. EUV reflected light having circuit pattern information from the reflective mask 300 illuminated in an arc shape is projected and imaged by the projection optical system 400 onto the target object 500 coated with a photosensitive material at a magnification optimum for exposure. Thus, the circuit pattern is exposed. The projection optical system 400 of the present embodiment is a reflection type projection optical system composed of six mirrors, but the number of mirrors is not limited to six, and a desired number such as four, five, or eight. Can be used.
[0041]
The object to be processed 500 is fixed to the wafer stage 550 and has a function of moving in parallel up and down on the paper surface. The movement is controlled by a length measuring device such as a laser interferometer (not shown). When the magnification of the projection optical system 400 is M, for example, the reflective mask 300 is scanned at a speed v in a direction parallel to the paper surface, and at the same time, the workpiece 500 is synchronized at a speed v / M in a direction parallel to the paper surface. By scanning, overall exposure is performed.
[0042]
In this embodiment, the wafer is exposed. However, the object 500 to be exposed is not limited to the wafer, and includes a wide variety of objects to be processed such as a liquid crystal substrate. A photoresist is applied to the object to be processed 500. The photoresist coating process includes a pretreatment, an adhesion improver coating process, a photoresist coating process, and a prebaking process. Pretreatment includes washing, drying and the like. The adhesion improver coating process is a surface modification process for improving the adhesion between the photoresist and the base (that is, a hydrophobic process by application of a surfactant), and an organic film such as HMDS (Hexmethyl-disilazane) is used. Coat or steam. Pre-baking is a baking (firing) step, but is softer than that after development, and removes the solvent.
[0043]
Wafer stage 550 supports object 500 to be processed. Any configuration known in the art can be applied to the stage 550. For example, the workpiece 500 is moved in the XYZ directions using a linear motor. The mask 300 and the workpiece 500 are scanned in synchronization with each other, controlled by a control unit (not shown). The positions of the mask stage 350 and the wafer stage 550 are monitored by, for example, a laser interferometer, and both are driven at a constant speed ratio.
[0044]
Here, the exposure apparatus using EUV light has been mainly described. However, the embodiment of the present application is not limited to EUV, but can be applied to an exposure apparatus using an electron beam. Moreover, you may apply to the exposure apparatus using X-ray.
[0045]
Next, an embodiment of a device manufacturing method using the above-described exposure apparatus will be described with reference to FIGS. FIG. 6 is a flowchart for explaining how to fabricate devices (ie, semiconductor chips such as IC and LSI, LCDs, CCDs, and the like). Here, the manufacture of a semiconductor chip will be described as an example. In step 1 (circuit design), the device circuit is designed. In step 2 (mask production), a mask on which the designed circuit pattern is formed is produced. In step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the mask and wafer. Step 5 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer created in step 4, and includes processes such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). . In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device created in step 5 are performed. Through these steps, the semiconductor device is completed and shipped (step 7).
[0046]
  FIG. 7 is a detailed flowchart of the wafer process in Step 4 shown in FIG. In step 11 (oxidation), the wafer surface is oxidized. In step 12 (CVD), an insulating film is formed on the surface of the wafer. In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition or the like. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist process), a photosensitive agent is applied to the wafer. In step 16 (exposure), the exposure apparatus600To expose the circuit pattern of the mask onto the wafer. In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), the resist that has become unnecessary after the etching is removed. By repeatedly performing these steps, multiple circuit patterns are formed on the wafer.
[0047]
The preferred embodiments of the present invention have been described above, but the present invention is not limited to these embodiments, and various modifications and changes can be made within the scope of the gist. For example, instead of providing the temperature adjustment plate 11, the temperature may be adjusted by embedding the refrigerant pipe 10 around the exhaust hole of the exhaust device 12.
[0048]
The present application further discloses the following matters.
[0049]
(Embodiment 1) A constant temperature vacuum container for storing an object and keeping the temperature of the object constant in a reduced pressure or vacuum environment,
A temperature adjusting member provided in at least a part of the constant temperature vacuum vessel;
A constant temperature vacuum container comprising a temperature adjusting mechanism for adjusting the temperature of the temperature adjusting member.
[0050]
(Embodiment 2) The thermostatic vacuum container according to embodiment 1, wherein the temperature adjusting mechanism adjusts the temperature of the temperature adjusting member using a refrigerant.
[0051]
(Embodiment 3) The constant temperature vacuum container according to Embodiment 1, further comprising a heat insulating member that supports the temperature adjusting member inside the constant temperature vacuum container.
[0052]
(Embodiment 4) The emissivity of the surface of the temperature adjusting member facing the constant temperature vacuum vessel and / or the inner surface of the constant temperature vacuum vessel facing the temperature adjusting member is adjusted to be about 0.4 or less. The constant temperature vacuum container according to Embodiment 1, wherein
[0053]
(Embodiment 5) The emissivity of the surface of the temperature adjusting member facing the object and / or the surface of the object facing the temperature adjusting member is adjusted to be about 0.8 or more. The constant temperature vacuum container according to embodiment 1, characterized by:
[0054]
(Embodiment 6) The constant temperature vacuum container according to embodiment 1, wherein the constant temperature vacuum container is adjusted so that the emissivity of the surface where the temperature is kept constant is about 0.8 or more.
[0055]
(Embodiment 7) The thermostatic vacuum container according to Embodiment 1, wherein the temperature adjusting member is a plate-like member.
[0056]
(Embodiment 8) An exposure apparatus, wherein an optical system is housed and operated in the constant temperature vacuum container according to any one of Embodiments 1 to 7.
[0057]
(Embodiment 9) A mask or reticle pattern that is housed in the constant-temperature vacuum vessel according to any one of Embodiments 1 to 7 and is illuminated with a light beam emitted from a light source in an extreme ultraviolet region or an X-ray region. An exposure apparatus having a projection optical system for projecting onto an object to be processed.
[0058]
(Embodiment 10) An exposure apparatus characterized in that a stage on which a mask and / or a stage on which an object to be processed is placed is housed in the constant temperature vacuum container according to any one of Embodiments 1 to 9. .
[0059]
(Embodiment 11) A mask or reticle pattern is projected by using a light beam emitted from a light source in an extreme ultraviolet region or an X-ray region, which is housed in the constant temperature vacuum container according to any one of Embodiments 1 to 7. An exposure apparatus comprising a stage on which an object to be processed is placed.
[0060]
(Embodiment 12) A stage that is housed in the constant temperature vacuum container according to any one of Embodiments 1 to 7 and that has a stage on which a pattern is drawn using an electron beam is placed. Electron beam exposure device.
[0061]
Embodiment 13 A step of exposing a substrate using the exposure apparatus according to Embodiments 8 to 12, and
And a step of performing a predetermined process on the exposed substrate.
[0062]
【The invention's effect】
By installing a temperature control plate that is temperature-controlled by water cooling or the like between the inner device and the inner wall of the container, the device temperature in the container can be made uniform and constant more easily than temperature control of the container itself. It becomes possible. By reducing the emissivity of the temperature adjustment plate on the container side, the temperature change of the container is less likely to affect the temperature control of the temperature adjustment plate. Further, the temperature control plate surface on the container inner device side and the surface of the container inner device increase the emissivity (for example, 0.8 to 0.9 or more), thereby increasing the thermostatic effect of the container. Furthermore, with respect to the inner wall surface of the region where the temperature is kept constant in the container, the efficiency as a thermostatic container is improved by configuring the emissivity to be high. Further, by configuring an exposure apparatus using such a constant temperature vacuum container, further improvement in exposure accuracy can be expected.
[0063]
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view of a constant temperature vacuum container according to a first embodiment of the present invention.
[0064]
FIG. 2 is a schematic cross-sectional view of a constant temperature vacuum container according to a second embodiment of the present invention.
[0065]
3 is a schematic view showing an exposure apparatus according to an embodiment of the present invention using the constant temperature vacuum container shown in FIG. 1 or FIG.
[0066]
FIG. 4 is a schematic plan view of a temperature control plate of the constant temperature vacuum container shown in FIG.
[0067]
FIG. 5 is a schematic plan view of another temperature control plate of the constant temperature vacuum container shown in FIG.
[0068]
FIG. 6 is a flowchart for explaining how to fabricate devices (ie, semiconductor chips such as IC and LSI, LCDs, CCDs, and the like).
[0069]
FIG. 7 is a detailed flowchart of the wafer process in Step 4 shown in FIG. 6;
[0070]
FIG. 8 is a schematic cross-sectional view showing the configuration of a constant-temperature vacuum vessel that can be considered from the configuration of the prior art.
[0071]
FIG. 9 is a schematic cross-sectional view for explaining a conventional constant temperature vacuum vessel.
[0072]
[Explanation of symbols]
1 Object (substrate)
2 Top plate
3 Guide
4 Drive unit
5 Stage surface plate
6 Piping for refrigerant
7 Vacuum container
8 Optical system equipment
9 Insulation support member
10 Refrigerant piping (for radiation shielding plate)
11 Temperature control plate
12 Exhaust device

Claims (5)

Te container smell that accommodates the object,
A Department material provided on at least a portion of said container,
Have a temperature adjusting mechanism for adjusting the temperature of said member,
The member is attached to the inside of the container via a heat insulating member,
Temperature of the object, container you wherein Rukoto kept constant at reduced pressure or vacuum environment. In an exposure apparatus that exposes a substrate,
A container,
A positioning device arranged inside the container for determining the position of the substrate;
A member attached to the inside of the container via a heat insulating member;
A temperature adjusting mechanism for adjusting the temperature of the member,
An exposure apparatus characterized in that the inside of the container is depressurized or vacuumed. When the inside of the container is in a reduced pressure or vacuum environment,
The member promotes heat transfer by radiant heat between the positioning device and the member.
The exposure apparatus according to claim 2. When the inside of the container is in a reduced pressure or vacuum environment,
The member shields the positioning device from radiant heat on the inner surface of the container.
The exposure apparatus according to claim 2. The exposure apparatus according to claim 2, wherein the member is provided with a hole facing the exhaust port of the container.