KR100532771B1 - Wafer carrier for use in chemical mechanical polishing process - Google Patents
Wafer carrier for use in chemical mechanical polishing process Download PDFInfo
- Publication number
- KR100532771B1 KR100532771B1 KR10-2003-0096733A KR20030096733A KR100532771B1 KR 100532771 B1 KR100532771 B1 KR 100532771B1 KR 20030096733 A KR20030096733 A KR 20030096733A KR 100532771 B1 KR100532771 B1 KR 100532771B1
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- South Korea
- Prior art keywords
- wafer
- carrier
- base plate
- carrier film
- support ring
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
- B24B37/32—Retaining rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
Abstract
본 발명은 CMP(Chemical-Mechanical Polishing)공정의 웨이퍼 캐리어(carrier)에 관한 것이다.The present invention relates to a wafer carrier in a chemical-mechanical polishing (CMP) process.
본 발명은 회전축에 연결되는 베이스 플레이트와, 상기 베이스 플레이트의 하부 가장자리를 따라 구비되는 지지링과, 상기 지지링의 내측으로 상기 베이스 플레이트측에 부착되는 캐리어필림을 포함하며, 상기 캐리어필림을 통해 웨이퍼의 후면을 흡착 취부하는 웨이퍼 캐리어에 있어서, 상기 웨이퍼의 동심원으로 다수 구분된 환형 영역에 작용하는 후면압력을 개별적으로 조정하기 위해 각 환형 영역에 대한 가이드링을 상기 캐리어필림의 상부에 동심원으로 각각 구비하고, 상기 가이드링 사이에는 상기 웨이퍼를 흡착하기 위한 진공노즐이 삽입 구비되는 것을 특징으로 한다.The present invention includes a base plate connected to the rotating shaft, a support ring provided along the lower edge of the base plate, and a carrier film attached to the base plate side inside the support ring, the wafer through the carrier film A wafer carrier for adsorption and mounting of a rear surface of a wafer, the guide ring for each annular region being provided concentrically on the upper portion of the carrier film to individually adjust the back pressure acting on the annular region divided into a plurality of concentric circles of the wafer. The vacuum nozzle for adsorbing the wafer is inserted between the guide rings.
따라서, 영역별 단차를 갖는 웨이퍼 표면에 대한 균일 연마가 가능하게 되어 생산수율이 크게 향상되는 효과가 있다.Therefore, it is possible to uniformly polish the surface of the wafer having the step difference for each region, and thus the production yield is greatly improved.
Description
본 발명은 CMP공정에서 사용되는 웨이퍼 캐리어(carrier)에 관한 것으로써, 더욱 상세하게는 영역별로 단차를 갖는 웨이퍼 표면을 균일하게 연마할 수 있도록 웨이퍼의 영역별도 서로 다른 후면압력이 작용하도록 하는 CMP공정의 웨이퍼 캐리어에 관한 것이다.The present invention relates to a wafer carrier used in the CMP process, and more particularly to the CMP process to allow different back pressures to be applied to different regions of the wafer so as to uniformly polish a wafer surface having a step by region. Relates to a wafer carrier.
일반적으로, 반도체 소자의 집적도가 증가함에 따라 반도체 웨이퍼상에 형성되는 구조물의 높낮이 단차가 증가되고 있는데, 단차가 증가할 경우 후속 리소그래피(lithography)공정에서 촛점깊이(DOF : Depth Of Focusing) 문제로 인하여 마스크 패턴을 정확하게 프린팅하는데 어려움이 발생한다.In general, as the degree of integration of semiconductor devices increases, the height step height of the structure formed on the semiconductor wafer increases. Difficulties arise in accurately printing mask patterns.
따라서, 최근에는 웨이퍼(wafer)의 표면을 평탄화하기 위해서 화학적인 제거가공과 기계적인 제거가공을 하나의 가공공정으로 합한 화학적 기계적 연마(Chemical-Mechanical Polishing ; 이하 "CMP"라 함)공정이 널리 이용되고 있다.Therefore, recently, chemical-mechanical polishing (hereinafter referred to as "CMP") process that combines chemical removal processing and mechanical removal processing into one processing process is widely used to planarize a wafer surface. It is becoming.
CMP공정은 단차를 가진 웨이퍼 표면을 폴리싱 패드(polishing pad) 위에 밀착시킨 후, 연마제와 화학물질이 포함된 슬러리(slurry)를 웨이퍼와 폴리싱 패드 사이에 주입시켜 웨이퍼의 표면을 평탄화시킨다.In the CMP process, a wafer surface having a step is brought into close contact with a polishing pad, and then a slurry containing abrasive and chemical is injected between the wafer and the polishing pad to planarize the surface of the wafer.
이와 같은 CMP공정에 대해서는 일예로 대한민국 실용신안 출원번호 20-2001-0038224호(명칭 : 반도체 웨이퍼용 평탄화 장치)에 잘 나타나 있다.Such a CMP process is well shown in Korean Utility Model Application No. 20-2001-0038224 (name: flattening device for semiconductor wafer) as an example.
CMP공정에서는 캐리어(carrier)를 통한 기계적 후면압력(down pressure)과 회전운동을 이용하여 웨이퍼 표면의 막질을 갈아내게 되는데, 캐리어는 웨이퍼의 후면을 통해 웨이퍼의 연마면이 하향되도록 웨이퍼를 홀딩하여 웨이퍼가 공정중에 이탈되지 않도록 하며, CMP공정의 연마제거량은 단위면적당 압력에 비례하므로, 캐리어에 의한 후면압력과 폴리싱 패드에 의해 상방으로 작용하는 압력에 직접적으로 영향을 받게 된다.In the CMP process, the film surface of the wafer is ground using mechanical back pressure and rotational movement through a carrier. The carrier holds the wafer by holding the wafer so that the polishing surface of the wafer is downward through the back of the wafer. Since the polishing removal amount of the CMP process is proportional to the pressure per unit area, it is directly affected by the back pressure caused by the carrier and the pressure acting upward by the polishing pad.
도 1은 종래의 캐리어를 개략적으로 도시한 종단면도이다.1 is a longitudinal sectional view schematically showing a conventional carrier.
캐리어는 회전축(10)의 하단측에 연결되는 베이스 플레이트(base plate)(20)와 이 베이스 플레이트(20)의 하부 가장자리를 따라 구비되는 환형의 지지링(retainer ring)(30) 및 지지링(30)의 내측으로 베이스 플레이트(20)측에 부착되는 캐리어필림(carrier film)(40)을 포함한다.The carrier includes a base plate 20 connected to the lower end side of the rotation shaft 10, an annular retainer ring 30 and a support ring provided along the lower edge of the base plate 20. 30 includes a carrier film 40 attached to the side of the base plate 20.
캐리어필림(40)에는 일방향 흡입수단인 진공노즐(vacuum nozzle)(45)이 전체적으로 균일하게 다수개 구비되어 진공노즐(45)의 흡입력으로 웨이퍼(W)를 흡착 취부하며, 취부된 웨이퍼(W)는 지지링(30)의 내측에 위치된다.The carrier film 40 is provided with a plurality of vacuum nozzles 45 as one-way suction means as a whole, uniformly, and sucks and mounts the wafer W by the suction force of the vacuum nozzle 45, and the mounted wafer W Is located inside the support ring 30.
지지링(30)은 웨이퍼(W)보다 조금 큰 링 형상으로 연마시 웨이퍼(W)가 외부로 밀려나가 이탈되지 않도록 한다.The support ring 30 has a ring shape slightly larger than that of the wafer W so that the wafer W is pushed to the outside and is not separated from the wafer W during polishing.
그러나, 종래에는 캐리어필림(40)의 전영역을 걸쳐 후면압력이 동일하게 작용하기 때문에 웨이퍼(W) 전면에 걸친 연마율을 변화시킬 수 있을 뿐, 웨이퍼(W)의 영역별 연마율을 선택적으로 조정할 수는 없어, 기본적으로 센터(center), 미들(middle), 에지(edge)영역 별로 지역적 단차를 갖는 웨이퍼(W) 표면을 균일하게 연마할 수 없으므로, 영역별로 저연마(under-polishing) 또는 과연마(over-polishing)된 연마두께의 헌팅(hunting)현상이 발생되는 문제점이 있었다.However, in the related art, since the back pressure acts the same over the entire area of the carrier film 40, only the polishing rate over the entire surface of the wafer W can be changed, and the polishing rate for each region of the wafer W is selectively changed. It cannot be adjusted, so it is not possible to uniformly grind the surface of the wafer (W) with local steps by center, middle, and edge areas, so that under-polishing or There was a problem in that hunting (hunting) of the over-polishing polishing thickness occurs.
본 발명은 상기와 같은 제반 문제점을 해결하기 위하여 창안된 것으로써, 영역별로 후면압력의 개별적 조정이 가능하도록 하는 CMP공정의 웨이퍼 캐리어를 제공하는데 그 목적이 있다.The present invention has been made to solve the above problems, and an object of the present invention is to provide a wafer carrier of the CMP process to enable individual adjustment of the back pressure for each region.
상술한 목적을 달성하기 위한 본 발명은, 회전축에 연결되는 베이스 플레이트와, 상기 베이스 플레이트의 하부 가장자리를 따라 구비되는 지지링과, 상기 지지링의 내측으로 상기 베이스 플레이트측에 부착되는 캐리어필림을 포함하며, 상기 캐리어필림을 통해 웨이퍼의 후면을 흡착 취부하는 웨이퍼 캐리어에 있어서, 상기 웨이퍼의 동심원으로 다수 구분된 환형 영역에 작용하는 후면압력을 개별적으로 조정하기 위해 각 환형 영역에 대한 가이드링을 상기 캐리어필림의 상부에 동심원으로 각각 구비하고, 상기 가이드링 사이에는 상기 웨이퍼를 흡착하기 위한 진공노즐이 삽입 구비되는 것을 특징으로 하는 CMP공정의 웨이퍼 캐리어를 제공한다.The present invention for achieving the above object includes a base plate connected to the rotating shaft, a support ring provided along the lower edge of the base plate, and a carrier film attached to the base plate side inward of the support ring In the wafer carrier for adsorption and mounting of the back surface of the wafer through the carrier film, the carrier is guided to each annular region to individually adjust the back pressure acting on the annular region divided into a plurality of concentric circles of the wafer. It is provided with a concentric circle on the top of the film, respectively, between the guide ring provides a wafer carrier of the CMP process, characterized in that the vacuum nozzle for adsorbing the wafer is inserted.
바람직하게, 상기 가이드링은 고무튜브 형태로, 내부 에어압력의 조정을 통해 후면압력이 조정되도록 한다.Preferably, the guide ring is in the form of a rubber tube, so that the rear pressure is adjusted by adjusting the internal air pressure.
본 발명의 상기 목적과 여러가지 장점은 이 기술분야에 숙련된 사람들에 의해 첨부된 도면을 참조하여 아래에 기술되는 발명의 바람직한 실시예로부터 더욱 명확하게 될 것이다.The above objects and various advantages of the present invention will become more apparent from the preferred embodiments of the invention described below with reference to the accompanying drawings by those skilled in the art.
이하, 첨부된 도면을 참조로 본 발명의 바람직한 실시예를 상세히 설명하기로 한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 2는 본 발명의 바람직한 실시예에 따른 웨이퍼 캐리어를 개략적으로 도시한 종단면도이고, 도 3은 그 횡단면도이다.2 is a longitudinal sectional view schematically showing a wafer carrier according to a preferred embodiment of the present invention, and FIG. 3 is a cross sectional view thereof.
설명에 앞서, 종래와 동일한 구성요소에 대해서는 동일한 도면부호를 부기하고, 그 상세한 설명은 생략함을 밝힌다.Prior to the description, the same reference numerals are given to the same components as in the related art, and detailed description thereof will be omitted.
본 발명에 따르면, 웨이퍼(W)의 센터, 미들, 에지 영역별로 후면압력(down pressure)이 개별적으로 작용되도록 캐리어필림(40) 상부에 동심원으로 된 세개의 가이드링(guide ring)(50)이 구비되며, 가이드링(50) 사이와 정중앙부에는 웨이퍼(W)를 흡착하여 캐리어필림(40)에 취부시키기 위한 일방향 흡입수단인 진공노즐(45)이 전체적으로 균일하게 삽입 구비된다.According to the present invention, three guide rings 50 are formed concentrically on the carrier film 40 so that down pressure is individually applied to the center, middle, and edge regions of the wafer W. The vacuum nozzle 45, which is a one-way suction means for absorbing the wafer W and attaching the wafer W to the carrier film 40, is inserted uniformly between the guide rings 50 and the center portion.
가이드링(50)은 고무튜브 형태일 수 있으며, 내부 에어압력의 조정을 통해 조정된 후면압력을 발생시켜 대응하는 웨이퍼(W) 영역에 대한 연마제거량이 조정되도록 한다.The guide ring 50 may be in the form of a rubber tube, and generates an adjusted rear pressure through adjustment of the internal air pressure so that the removal amount of the corresponding wafer W region is adjusted.
상세하게, 웨이퍼(W)의 에지영역을 다른 영역에 비해 적은 양 연마하고자 하는 경우에는 에지 가이드링(50-3)의 압력을 센터, 미들 가이드링(50-1, 50-2) 보다 상대적으로 적게 하여 해당 에지영역의 연마제거량이 감소되도록 하면 된다.In detail, when the edge area of the wafer W is to be polished in a smaller amount than other areas, the pressure of the edge guide ring 50-3 is relatively lower than that of the center and middle guide rings 50-1 and 50-2. The polishing removal amount of the corresponding edge region may be reduced.
따라서, 각 영역에 대한 가이드링(50)의 압력을 조건에 맞게 조정함으로써 종국적으로 웨이퍼(W)의 표면을 균일하게 연마할 수 있게 되는 것이며, 이와 같이 선택적 연마가 가능하므로 재연마(repolishing)공정에 더욱 유용하게 활용될 수 있다.Therefore, the surface of the wafer W can be uniformly polished by adjusting the pressure of the guide ring 50 for each region according to the conditions. As a result, selective polishing is possible, thereby repolishing. It can be used more usefully.
이상에서, 센터, 미들, 에지의 세영역으로 나누어 세개의 가이드링(50)이 구비되는 것으로 하였으나 이와 다르게 영역을 더욱 많게 또는 적게 구분하여 세개보다 많거나 적은 수의 가이드링(50)이 구비되도록 할 수도 있을 것이다.In the above, the three guide rings 50 are divided into three regions of the center, the middle, and the edge. However, three or more guide rings 50 may be divided into more or less regions so that more or less guide rings 50 may be provided. You could do it.
이상, 상기 내용은 본 발명의 바람직한 일 실시예를 단지 예시한 것으로 본 발명의 당업자는 본 발명의 요지를 변경시킴이 없이 본 발명에 대한 수정과 변경을 가할 수 있음을 인지해야 한다.In the foregoing description, it should be understood that those skilled in the art can make modifications and changes to the present invention without changing the gist of the present invention as merely illustrative of a preferred embodiment of the present invention.
본 발명에 따르면, 영역별 단차를 갖는 웨이퍼 표면에 대한 균일 연마가 가능하게 되어 생산수율이 크게 향상되는 효과가 달성될 수 있다.According to the present invention, it is possible to achieve uniform polishing on the wafer surface having the step-by-region level, thereby achieving an effect of greatly improving the production yield.
도 1은 종래의 웨이퍼 캐리어를 개략적으로 도시한 종단면도,1 is a longitudinal sectional view schematically showing a conventional wafer carrier;
도 2는 본 발명의 바람직한 실시예에 따른 웨이퍼 캐리어를 개략적으로 도시한 종단면도,2 is a longitudinal sectional view schematically showing a wafer carrier according to a preferred embodiment of the present invention;
도 3은 본 발명의 바람직한 실시예에 따른 웨이퍼 캐리어에 대한 횡단면도이다.3 is a cross-sectional view of a wafer carrier according to a preferred embodiment of the present invention.
<도면의 주요부분에 대한 부호의 설명><Description of Symbols for Main Parts of Drawings>
10 : 회전축 20 : 베이스 플레이트(base plate)10: axis of rotation 20: base plate
30 : 지지링(retainer ring) 40 : 캐리어필림(carrier film)30: retainer ring 40: carrier film
45 : 진공노즐(vacuum nozzle) 50 : 가이드링(guide ring)45: vacuum nozzle 50: guide ring
50-1 : 센터 가이드링 50-2 : 미들 가이드링50-1: center guide ring 50-2: middle guide ring
50-3 : 에지 가이드링 W : 웨이퍼50-3: Edge guide W: Wafer
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2003-0096733A KR100532771B1 (en) | 2003-12-24 | 2003-12-24 | Wafer carrier for use in chemical mechanical polishing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2003-0096733A KR100532771B1 (en) | 2003-12-24 | 2003-12-24 | Wafer carrier for use in chemical mechanical polishing process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20050065839A KR20050065839A (en) | 2005-06-30 |
| KR100532771B1 true KR100532771B1 (en) | 2005-12-02 |
Family
ID=37256991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2003-0096733A KR100532771B1 (en) | 2003-12-24 | 2003-12-24 | Wafer carrier for use in chemical mechanical polishing process |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100532771B1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170076252A (en) * | 2015-12-24 | 2017-07-04 | 주식회사 엘지실트론 | Wafer guide and Wafer cleaning bath including the same |
| JP6940944B2 (en) * | 2016-12-06 | 2021-09-29 | キヤノン株式会社 | Imprint device and article manufacturing method |
-
2003
- 2003-12-24 KR KR10-2003-0096733A patent/KR100532771B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20050065839A (en) | 2005-06-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20080930 Year of fee payment: 4 |
|
| LAPS | Lapse due to unpaid annual fee |