KR100530440B1 - 열 검출기 어레이 - Google Patents

열 검출기 어레이 Download PDF

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Publication number
KR100530440B1
KR100530440B1 KR10-1999-7011134A KR19997011134A KR100530440B1 KR 100530440 B1 KR100530440 B1 KR 100530440B1 KR 19997011134 A KR19997011134 A KR 19997011134A KR 100530440 B1 KR100530440 B1 KR 100530440B1
Authority
KR
South Korea
Prior art keywords
interconnect
microbridge
array
interconnect layer
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-1999-7011134A
Other languages
English (en)
Korean (ko)
Other versions
KR20010013151A (ko
Inventor
와튼렉스
힐섬시럴
Original Assignee
키네티큐 리미티드
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Publication date
Application filed by 키네티큐 리미티드 filed Critical 키네티큐 리미티드
Publication of KR20010013151A publication Critical patent/KR20010013151A/ko
Application granted granted Critical
Publication of KR100530440B1 publication Critical patent/KR100530440B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR10-1999-7011134A 1997-05-28 1998-05-14 열 검출기 어레이 Expired - Fee Related KR100530440B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9710843.5 1997-05-28
GBGB9710843.5A GB9710843D0 (en) 1997-05-28 1997-05-28 A thermal detector array
PCT/GB1998/001379 WO1998054554A1 (en) 1997-05-28 1998-05-14 A thermal detector array

Publications (2)

Publication Number Publication Date
KR20010013151A KR20010013151A (ko) 2001-02-26
KR100530440B1 true KR100530440B1 (ko) 2005-11-23

Family

ID=10813076

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-1999-7011134A Expired - Fee Related KR100530440B1 (ko) 1997-05-28 1998-05-14 열 검출기 어레이

Country Status (9)

Country Link
US (1) US6388256B1 (enExample)
EP (1) EP0985137B1 (enExample)
JP (1) JP4063892B2 (enExample)
KR (1) KR100530440B1 (enExample)
AU (1) AU732258B2 (enExample)
CA (1) CA2290541C (enExample)
DE (1) DE69829658T2 (enExample)
GB (1) GB9710843D0 (enExample)
WO (1) WO1998054554A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001153720A (ja) * 1999-11-30 2001-06-08 Nec Corp 熱型赤外線検出器
US6828545B1 (en) * 2001-05-15 2004-12-07 Raytheon Company Hybrid microelectronic array structure having electrically isolated supported islands, and its fabrication
KR20030016866A (ko) * 2001-08-22 2003-03-03 대우전자주식회사 적외선 흡수 볼로메터의 산화막 형성 방법
KR100529130B1 (ko) * 2001-08-22 2005-11-15 주식회사 대우일렉트로닉스 적외선 흡수 볼로메터 제조 방법
GB2385199A (en) * 2002-02-08 2003-08-13 Qinetiq Ltd Substrate with conducting vias
GB2392307B8 (en) * 2002-07-26 2006-09-20 Detection Technology Oy Semiconductor structure for imaging detectors
US7564125B2 (en) * 2002-12-06 2009-07-21 General Electric Company Electronic array and methods for fabricating same
JPWO2005078400A1 (ja) * 2004-02-17 2007-08-30 松下電器産業株式会社 赤外線検出装置およびその製造方法
RU2255315C1 (ru) * 2004-07-16 2005-06-27 Государственное образовательное учреждение высшего профессионального образования "Уральский государственный технический университет - УПИ" Способ тепловизионной диагностики процессов теплоотдачи
EP2029984A2 (en) * 2006-06-01 2009-03-04 Université de Liège A thermal detector
GB2449853B (en) * 2007-06-04 2012-02-08 Detection Technology Oy Photodetector for imaging system
JP5137059B2 (ja) * 2007-06-20 2013-02-06 新光電気工業株式会社 電子部品用パッケージ及びその製造方法と電子部品装置
US8049310B2 (en) * 2008-04-01 2011-11-01 Qimonda Ag Semiconductor device with an interconnect element and method for manufacture
MY147335A (en) * 2009-10-27 2012-11-30 Mimos Berhad An integrated packaged environmental sensor and roic and a method of fabricating the same
US9918023B2 (en) 2010-04-23 2018-03-13 Flir Systems, Inc. Segmented focal plane array architecture
US9948878B2 (en) 2010-04-23 2018-04-17 Flir Systems, Inc. Abnormal clock rate detection in imaging sensor arrays
US8610070B2 (en) 2010-04-28 2013-12-17 L-3 Communications Corporation Pixel-level optical elements for uncooled infrared detector devices
US8513605B2 (en) * 2010-04-28 2013-08-20 L-3 Communications Corporation Optically transitioning thermal detector structures
US8227755B2 (en) 2010-04-28 2012-07-24 L-3 Communications Corporation Pixel-level optically transitioning filter elements for detector devices
CN102798471B (zh) * 2011-10-19 2015-08-12 清华大学 一种红外探测器及其制备方法
CN204927290U (zh) * 2012-12-14 2015-12-30 菲力尔系统公司 具有分段式焦平面阵列的系统
FR2999805B1 (fr) * 2012-12-17 2017-12-22 Commissariat Energie Atomique Procede de realisation d'un dispositif de detection infrarouge
KR102197069B1 (ko) 2014-02-04 2020-12-30 삼성전자 주식회사 이미지 센서 및 이미지 처리 장치
US10879202B1 (en) * 2019-07-26 2020-12-29 International Business Machines Corporation System and method for forming solder bumps

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4663529A (en) * 1984-08-24 1987-05-05 U.S. Philips Corporation Thermal imaging device and a method of manufacturing a thermal imaging device
US5450053A (en) * 1985-09-30 1995-09-12 Honeywell Inc. Use of vanadium oxide in microbolometer sensors

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3816750A (en) * 1971-06-04 1974-06-11 Honeywell Inc Pyroelectric detector
US4142207A (en) * 1977-12-20 1979-02-27 Texas Instruments Incorporated Ferroelectric imaging system
EP0098318B1 (de) * 1982-07-03 1987-02-11 Ibm Deutschland Gmbh Verfahren zum Herstellen von Gräben mit im wesentlichen vertikalen Seitenwänden in Silicium durch reaktives Ionenätzen
GB8827661D0 (en) 1988-11-26 1989-05-17 Emi Plc Thorn Thermal imaging devices
GB8829685D0 (en) 1988-12-20 1989-02-15 Emi Plc Thorn Thermal imaging device
US4954313A (en) * 1989-02-03 1990-09-04 Amdahl Corporation Method and apparatus for filling high density vias
US5070026A (en) * 1989-06-26 1991-12-03 Spire Corporation Process of making a ferroelectric electronic component and product
GB2236016A (en) * 1989-09-13 1991-03-20 Philips Electronic Associated Pyroelectric and other infrared detection devices with thin films
US5602043A (en) * 1995-01-03 1997-02-11 Texas Instruments Incorporated Monolithic thermal detector with pyroelectric film and method
US5627082A (en) 1995-03-29 1997-05-06 Texas Instruments Incorporated High thermal resistance backfill material for hybrid UFPA's
US5618752A (en) * 1995-06-05 1997-04-08 Harris Corporation Method of fabrication of surface mountable integrated circuits

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4663529A (en) * 1984-08-24 1987-05-05 U.S. Philips Corporation Thermal imaging device and a method of manufacturing a thermal imaging device
US5450053A (en) * 1985-09-30 1995-09-12 Honeywell Inc. Use of vanadium oxide in microbolometer sensors

Also Published As

Publication number Publication date
EP0985137B1 (en) 2005-04-06
AU732258B2 (en) 2001-04-12
JP2002500763A (ja) 2002-01-08
US6388256B1 (en) 2002-05-14
AU7439898A (en) 1998-12-30
WO1998054554A1 (en) 1998-12-03
JP4063892B2 (ja) 2008-03-19
KR20010013151A (ko) 2001-02-26
GB9710843D0 (en) 1997-07-23
DE69829658D1 (de) 2005-05-12
CA2290541A1 (en) 1998-12-03
DE69829658T2 (de) 2006-02-09
CA2290541C (en) 2006-08-29
EP0985137A1 (en) 2000-03-15

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