KR100489042B1 - Reverse-pyramidal flip chip for high output led - Google Patents
Reverse-pyramidal flip chip for high output led Download PDFInfo
- Publication number
- KR100489042B1 KR100489042B1 KR10-2002-0051769A KR20020051769A KR100489042B1 KR 100489042 B1 KR100489042 B1 KR 100489042B1 KR 20020051769 A KR20020051769 A KR 20020051769A KR 100489042 B1 KR100489042 B1 KR 100489042B1
- Authority
- KR
- South Korea
- Prior art keywords
- flip chip
- mount
- light emitting
- power led
- emitting diode
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 229910052594 sapphire Inorganic materials 0.000 claims description 13
- 239000010980 sapphire Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 229910000679 solder Inorganic materials 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 9
- 239000004332 silver Substances 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
본 발명은 고출력 LED를 위한 역피라미드형 플립 칩에 관한 것으로서, 특히 높은 전류밀도에 의한 열을 신속히 제거하여 LED 칩의 신뢰성과 외부 효율을 극대화 시킬 수 있는 고출력 LED를 위한 역피라미드형 플립 칩 다이와 그 제조 방법에 관한 것이다.The present invention relates to a reverse pyramid type flip chip for high power LED, and in particular, a reverse pyramid type flip chip die for high power LED that can remove heat due to high current density and maximize the reliability and external efficiency of the LED chip. It relates to a manufacturing method.
본 발명에 따른 고출력 LED를 위한 역피라미드형 플립칩은, 역피라미드 형태로 형성된 반도체층을 포함하는 발광 다이오드;Reverse pyramid flip chip for a high-power LED according to the present invention, a light emitting diode comprising a semiconductor layer formed in the form of reverse pyramid;
상기 발광 다이오드가 실장되도록 반사홈이 형성된 서브 마운트; 및A sub-mount in which a reflective groove is formed to mount the light emitting diode; And
상기 서브 마운트의 반사홈 영역에 형성된 방열판을 포함하는 것을 특징으로 한다.And a heat sink formed in the reflective groove area of the sub-mount.
본 발명은 고출력 LED의 단면을 역 피라미드 형태로 만들어 줌으로써 광자의 이동 거리를 줄이고 그 결과 내부 광 손실을 줄일 수 있게 한다.The present invention makes the cross section of the high power LED in an inverted pyramid shape to reduce the travel distance of photons and consequently to reduce internal light loss.
Description
본 발명은 고출력 LED를 위한 역피라미드형 플립 칩 다이와 그 제조방법에 관한 것으로서, 특히 높은 전류밀도에 의한 열을 신속히 제거하여 LED 칩의 신뢰성과 외부 효율을 극대화 시킬 수 있는 고출력 LED를 위한 역피라미드형 플립 칩 다이와 그 제조방법에 관한 것이다.The present invention relates to a reverse pyramid type flip chip die for a high power LED and a method for manufacturing the same. In particular, the reverse pyramid type for a high power LED capable of maximizing reliability and external efficiency of an LED chip by rapidly removing heat due to high current density. A flip chip die and a method of manufacturing the same.
일반적으로, LED는 반도체 다이오드의 p-n junction에서 전자와 정공(hole)이 결합할 때 나오는 빛을 이용하여 정보를 나타내는 디스플레이 소자를 말한다.In general, an LED refers to a display device that displays information by using light emitted when electrons and holes combine at a p-n junction of a semiconductor diode.
이러한 LED는 주로 표시용 램프나 숫자와 같은 산업용 광센서의 광원, LCD용 백라이트, 경고등, 교통 신호등으로 사용되었고, 특히 블루 LED의 개발과 더불어 대형 옥외전광판등으로 향후 LCD, PDP, EL과는 차별화된 정보 디스플레이 소자로 서 활용되고 있다.These LEDs were mainly used as light sources for industrial light sensors such as display lamps and numbers, backlights for LCDs, warning lights, and traffic signals.In particular, with the development of blue LEDs, they are differentiated from LCDs, PDPs, and ELs in the future due to large outdoor billboards. It is utilized as an information display device.
도 1은 종래에 따른 플립 칩 방식의 고출력 LED의 구조를 나타낸 칩 단면이다. 도 1에 도시된 바와 같이, 종래 플립 칩 형태의 고출력 LED는, 사파이어 기판(107)상에 n형층(109), 활성층(102), p형층(103)이 순서대로 적층한 후, 상기 p형층(103), 활성층(102), n형층(109)의 소정 부분을 식각하고, n형 전극(106) 및 p형 전극(101)을 형성하여 상기 p형 전극(101), n형 전극(106)상에 솔더 메탈층을 증착시킨 반도체층과; 상기 반도체층에서 발광되는 빛에 의해 생성되는 열을 흡수하여 방열시키는 서브마운트(100)를 포함하여 구성된다.1 is a chip cross-sectional view showing a structure of a conventional high power LED of the flip chip type. As shown in FIG. 1, in the conventional flip chip type high-power LED, the n-type layer 109, the active layer 102, and the p-type layer 103 are sequentially stacked on the sapphire substrate 107, and then the p-type layer. A predetermined portion of the 103, the active layer 102, and the n-type layer 109 is etched to form the n-type electrode 106 and the p-type electrode 101 to form the p-type electrode 101 and the n-type electrode 106. A semiconductor layer on which a solder metal layer is deposited; And a submount 100 for absorbing and radiating heat generated by light emitted from the semiconductor layer.
여기서, 상기 서브마운트(100)에는 방열판을 증착시키고, 상기 방열판위에는 상기 반도체층의 솔더 메탈층과 대응되는 솔더 메탈층을 형성한다. 그리고, 상기 반도체층의 솔더 메탈층과 상기 서브마운트의 솔더 메탈층을 접합시키기 위해 솔더볼(105) 형태로 텍(tag) 한 후, 열처리등을 통하여 접합되도록 한다.Here, a heat sink is deposited on the submount 100, and a solder metal layer corresponding to the solder metal layer of the semiconductor layer is formed on the heat sink. Then, in order to bond the solder metal layer of the semiconductor layer and the solder metal layer of the submount tag (tag) in the form of a solder ball 105 (tag), it is to be bonded by heat treatment or the like.
따라서, 상기와 같이 구성된 플립 칩 형태의 고출력 LED는 상기 활성층(102)에서 생성된 빛이 상기 사파이어 기판(107)으로 투과된다.Therefore, in the flip-chip type high power LED configured as described above, light generated in the active layer 102 is transmitted to the sapphire substrate 107.
도 2는 종래에 따른 플립칩 형태의 고출력 LED에서 사파이어 기판을 통해 빛이 발광되는 모습을 나타내는 도면이다. 이에 도시된 바와 같이, p형 전극과 n형 전극을 반투명 금속 전극을 쓰는 대신 다운 정션(down junction)의 형태를 갖는 플립 칩 형태를 취해서 사파이어 기판으로 빛이 발광하도록 하였다. 전극의 금속을 전류 확산(current spreading)을 위해서 두껍게 올리고 반사율을 높임으로써 도파된 빛의 흡수를 줄이고 본드 패드나 와이어에 의한 빛의 손실을 줄였다. 두꺼운 반사 p 접촉(contact)를 만들어 줌으로써 전류 퍼짐과 낮은 순방향 전압(forward voltage)를 제공하고 아래쪽으로 진행하는 빛을 p 접촉에서 사파이어 쪽으로 반사시켜 줌으로써 빛 추출(light extraction)을 증가시킨다.2 is a view showing a state in which light is emitted through a sapphire substrate in a flip-chip type high-power LED according to the prior art. As shown in the drawing, instead of using a translucent metal electrode, the p-type electrode and the n-type electrode have a flip chip form having a form of down junction, so that light is emitted to the sapphire substrate. By raising the metal of the electrode thicker for current spreading and increasing the reflectance, it reduces the absorption of guided light and reduces the loss of light by bond pads or wires. By providing a thick reflective p-contact, it provides current spreading and low forward voltage, and increases light extraction by reflecting light traveling downwards from the p-contact toward sapphire.
사파이어와 실리콘의 열팽창 계수가 비슷하고 실리콘 웨이퍼의 솔더 범핑이 산업의 기본 공정이므로 플립 칩 형태의 고출력 LED의 서브마운트(submount)로 실리콘 서브마운트를 사용하고, 열전도율이 높은 알루미늄을 방열판으로 사용하였다.Since the thermal expansion coefficients of sapphire and silicon are similar and solder bumping of silicon wafer is the basic process of the industry, silicon submount is used as the submount of flip-chip type high power LED, and aluminum with high thermal conductivity is used as the heat sink.
그러나, 전술한 바와 같이 플립 칩 형태를 이용한 기술도 종래 LED와 같이 칩의 측면으로 빠져 나가는 빛의 손실과 광자의 이동 거리를 줄여서 내부 광 손실을 줄이지 못했다.However, as described above, the technique using the flip chip type does not reduce the internal light loss by reducing the loss of light and the moving distance of the photons to the side of the chip as in the conventional LED.
또한, 넓은 밴드 갭으로 인한 높은 작동 전압을 가지고 작동하는 동안 심각한 오옴 열(ohmic heating)을 이끌게 된다. 이때, 발생한 열은 출력의 지수적인 감소를 가져온다.It also leads to severe ohmic heating during operation with high operating voltages due to wide band gaps. At this time, the generated heat leads to an exponential decrease in output.
또한, 불순물의 확산과 디스로케이션(dislocation)의 이동은 출력에 강하게 영향을 미치고 이것은 온도에 대한 의존도가 높기 때문에, 칩에서 발생하는 열을 최대한 뽑아내어 줄일 수 있는 방법이 요구되어진다.In addition, since the diffusion of impurities and the movement of dislocations strongly affect the output, which is highly dependent on temperature, there is a need for a method of extracting and reducing heat generated from a chip as much as possible.
본 발명의 목적은 고출력을 위한 LED 칩 다이의 단면을 역피라미드 형태로 잘라서 광자의 이동거리를 줄여 줌으로써 내부 광 손실을 줄이고 발광 효율을 높여주는 것을 목적으로 한다.An object of the present invention is to cut the cross section of the LED chip die for high power in the form of reverse pyramid to reduce the moving distance of the photon to reduce the internal light loss and to improve the luminous efficiency.
또한, 칩의 측벽에 은 코팅(Ag coating)을 해줌으로써 측벽에서의 반사율을 높여주고 빛의 흡수율은 낮추는 것을 목적으로 한다.In addition, the silver coating (Ag coating) on the sidewall of the chip to increase the reflectance on the sidewall and to reduce the light absorption.
또한, 실리콘 서브마운트도 역 피라미드 형태로 깎아 주어 칩의 측벽과도 접촉하게 만들어 열 저항을 낮춤으로써 신뢰성과 외부 효율성을 높이는 것을 목적으로 한다.Silicon submounts are also cut into inverted pyramids to make contact with the chip's sidewalls, reducing thermal resistance for increased reliability and external efficiency.
본 발명에 따른 고출력 LED를 위한 역 피라미드형 플립칩은,역피라미드 형태로 형성된 반도체층을 포함하는 발광 다이오드;상기 발광 다이오드가 실장되도록 반사홈이 형성된 서브 마운트; 및상기 서브 마운트의 반사홈 영역에 형성된 방열판을 포함하는 것을 특징으로 한다.여기서, 상기 발광 다이오드는 상기 서브 마운트 상에 형성된 방열판과 전기적으로 연결될 수 있도록 플립칩 본딩되고, 상기 서브 마운트의 반사홈 영역에 형성된 방열판의 가장자리에는 외부로부터 전원을 인가하기 위하여 와이어 패드 형성된 것을 특징으로 한다.그리고 상기 발광 다이오드의 반도체층, n형층 및 사파이어 기판의 양측면과 상기 서브 마운트의 반사홈 영역에 형성된 방열판 사이에는 열방출과 광반사를 위한 반사막이 형성되고, 상기 반사막은 Ag로 형성되며, 상기 서브 마운트의 반사홈 상에 실장된 발광 다이오드는 발생되는 열을 하측과 양측에 형성된 반사막을 통하여 양측면으로 방열되는 것을 특징으로 한다.또한, 상기 발광 다이오드의 반도체층을 역피라미드 형태로 형성한 것은 활성층에서 발생되는 광이의 이동 거리를 줄여 광효율을 향상시키기 위한 것을 특징으로 한다.이하, 첨부된 도면을 참조하여 본 발명에 따른 바람직한 실시예가 설명된다.An inverted pyramid flip chip for a high power LED according to the present invention comprises: a light emitting diode including a semiconductor layer formed in a reverse pyramid shape; a sub-mount in which a reflective groove is formed to mount the light emitting diode; And a heat sink formed in the reflective groove area of the sub mount. Here, the light emitting diode is flip chip bonded to be electrically connected to the heat sink formed on the sub mount, and the reflective groove area of the sub mount is provided. A wire pad may be formed at an edge of the heat sink to form a wire pad for applying power from the outside. A heat pad may be formed between both sides of the semiconductor layer, the n-type layer, and the sapphire substrate of the light emitting diode and the heat sink formed in the reflective groove area of the sub-mount. A reflective film for emission and light reflection is formed, the reflective film is formed of Ag, and the light emitting diode mounted on the reflective groove of the sub-mount radiates heat generated to both sides through the reflective film formed on the lower side and both sides. In addition, the semiconductor of the light emitting diode. The station is characterized in that to improve the optical efficiency pyramid is formed in the form of reducing the moving distance of the light generated in the active layer will be described below a preferred embodiment according to the present invention with reference to the accompanying drawings.
삭제delete
삭제delete
삭제delete
삭제delete
삭제delete
삭제delete
삭제delete
삭제delete
삭제delete
도 3는 본 발명에 따른 고출력 LED를 위한 역 피라미드형 플립 칩의 구조를나타낸 도면이다. 이에 도시된 바와 같이, 본 발명에 따른 고출력 LED를 위한 역 피라미드형 플립칩은, 양측면이 코팅처리되어 반사막을 형성한 역피라미드 형태의 반도체층(312)을 포함화는 발광 다이오드(LED)와; 상기 반도체층(312)의 양측면과 저면을 둘러싸도록 반사홈이 형성된 서브 마운트(300)와; 상기 서브 마운트(300)의 반사홈 내측에 상기 발광 다이오드의 활성층(303)에서 발광되는 빛을 반사하면서, 생성되는 열을 방열시키기 위한 방열판(304)이 형성되어 있다.여기서, 상기 발광 다이오드의 반도체층(312)은 사파이어 기판(307)상에 n형층(309), 활성층(303), P형층(302)이 순차적으로 적층된 후, 상기 P형층(302), 활성층(303), n형층(309)의 소정 부분을 식각하여 역피라미드 형태로 형성되어 있고, 상기 반도체층(312) 상에 n형 전극(306) 및 p형 전극(301)이 형성되어 있다.이어 상기 발광 다이오드의 p형 전극(301), n형 전극(306)에 솔더 메탈층(308)을 증착시켜서, 서브 마운트(300)의 반사홈 내측에 형성된 방열판(304) 상에 실장된다.3 is a view showing the structure of an inverted pyramid flip chip for a high power LED according to the present invention. As shown therein, an inverted pyramidal flip chip for a high power LED according to the present invention includes a light emitting diode (LED) including an inverted pyramid-shaped semiconductor layer 312 formed by coating both sides thereof to form a reflective film; A sub-mount 300 having reflective grooves formed to surround both side surfaces and a bottom surface of the semiconductor layer 312; A heat sink 304 is formed inside the reflective groove of the sub-mount 300 to dissipate heat generated while reflecting light emitted from the active layer 303 of the light emitting diode. After the n-type layer 309, the active layer 303, and the p-type layer 302 are sequentially stacked on the sapphire substrate 307, the layer 312 is formed of the p-type layer 302, the active layer 303, and the n-type layer ( A predetermined portion of the 309 is etched to form an inverted pyramid, and an n-type electrode 306 and a p-type electrode 301 are formed on the semiconductor layer 312. The p-type electrode of the light emitting diode is then formed. 301 and the solder metal layer 308 are deposited on the n-type electrode 306 to be mounted on the heat sink 304 formed inside the reflection groove of the sub-mount 300.
삭제delete
그리고, 상기 반도체층(312)은 양측면이 소정의 각도를 갖는 역피라미드의 형태로 형성되며, 상기 반도체층(312)의 양측면과 상기 서브 마운트(300)의 반사홈을 따라 형성된 방열판(304) 사이에는 광반사 및 방열을 위하여 은(Ag)으로 코팅처리된 반사막(310)이 형성되어 있다.도 4는 본 발명에 따른 역 피라미드형 플립칩에서의 광자(photon)의 이동 거리를 보여주는 도면이다. 이에 도시된 바와 같이, 고출력 LED를 위한 플립칩 다이를 역피라미드 형태로 잘랐을 경우, 광자의 이동거리가 종래보다 줄어 들었음을 보여준다.In addition, the semiconductor layer 312 is formed in the form of an inverted pyramid having both sides at a predetermined angle, and is disposed between both side surfaces of the semiconductor layer 312 and the heat sink 304 formed along the reflective groove of the sub-mount 300. A reflective film 310 coated with silver (Ag) is formed for light reflection and heat dissipation. FIG. 4 is a view showing a moving distance of a photon in an inverted pyramidal flip chip according to the present invention. As shown in the drawing, when the flip chip die for the high power LED is cut in the form of inverted pyramid, it shows that the moving distance of the photons is smaller than before.
삭제delete
이와같이 광자의 이동거리를 줄여 줌으로써 내부 광 손실(internal optical loss)을 줄여서 외부 효율성(external efficiency)을 높여 준다.As such, by reducing the photon travel distance, the internal optical loss is reduced to increase the external efficiency.
도 5은 본 발명에 따른 역 피라미드형 플립칩의 측면을 은 코팅하였을 경우의 발광된 빛의 반사를 나타내는 도면이다. 이에 도시된 바와 같이, 은으로 코팅된 방열판이 역 피라미드형 고출력 발광 다이오드의 다이 측면에 부착되었을 경우 발광면으로의 빛의 반사가 증가하게 된다.5 is a view showing the reflection of the emitted light when the side surface of the inverted pyramidal flip chip according to the present invention. As shown in the drawing, when the heat-sink coated with silver is attached to the die side of the inverted pyramidal high power light emitting diode, the reflection of light to the light emitting surface is increased.
즉, 칩의 측벽에 은 코팅(Ag coating)을 해줌으로써 측벽에서의 반사율을 높여주고 빛의 흡수율은 낮추는 효과를 준다. In other words, the silver coating (Ag coating) on the sidewall of the chip to increase the reflectance on the sidewall and the effect of reducing the light absorption.
따라서, 역 피라미드 형태인 칩의 측면에 은 코팅을 함으로써 측면을 통해서 손실되는 빛을 줄이고, 이를 통해 발광면으로의 빛의 반사를 증가시켜 발광 다이오드의 발광 효율을 높인다.Therefore, by coating the side of the chip in the form of an inverted pyramid to reduce the light lost through the side, thereby increasing the reflection of light to the light emitting surface to increase the luminous efficiency of the light emitting diode.
한편, 상기 방열판(304)은 상기 측면에 반사막 처리된 반도체층(312)을 수용하는 구조로 형성되어 있고, 내부의 저면에는 상기 반도체층(312)의 솔더 메탈층(308)과 접촉시키기 위해 대응되는 위치에 또 다른 솔더 메탈층(308)이 형성되어 있다.On the other hand, the heat sink 304 is formed in a structure that accommodates the semiconductor layer 312 is a reflection film on the side, the inner surface of the corresponding to contact the solder metal layer 308 of the semiconductor layer 312 Another solder metal layer 308 is formed at the position.
따라서, 상기 방열판(304)은 상기 n형 전극(306) 및 p형 전극(301)이 서로 도통되지 않도록 떨어져 형성되어 있는 구조이다.Therefore, the heat sink 304 has a structure in which the n-type electrode 306 and the p-type electrode 301 are formed apart from each other so as to be conductive.
여기서, 상기 반도체층(312)의 솔더 메탈층(308)과 상기 방열판(304)의 솔더 메탈층(308)은 도전성 솔더볼(305)을 이용하여 물리적으로 접촉시킨다. 상기 솔더볼(305)은 상기 두 솔더 메탈층(308)사이에 위치시켜 열처리하게 되면 플랫형태로 변형되어 접착된다.Here, the solder metal layer 308 of the semiconductor layer 312 and the solder metal layer 308 of the heat sink 304 are in physical contact with the conductive solder ball 305. The solder ball 305 is deformed into a flat shape when the heat treatment is placed between the two solder metal layers 308 and bonded.
또한, 상기 방열판(304)과 상기 은으로 코팅된 반사막(310)이 연속적으로 접촉되어 형성된다.In addition, the heat sink 304 and the reflective film 310 coated with silver are formed in continuous contact with each other.
또한, 상기 방열판(304)은 열전도율이 높은 알루미늄으로 형성되며, 이는 발광된 빛을 반사시키고, 활성층(303)에 의해 생성된 열을 방열시킨다.In addition, the heat sink 304 is formed of aluminum having high thermal conductivity, which reflects the emitted light and dissipates the heat generated by the active layer 303.
그리고, 상기 서브마운트(300)는 상기 방열판(304)을 수용하는 형태로 형성되어 접착되며, 상기 방열판(304)으로부터의 열을 전도받아 외부로 방열시킨다.In addition, the submount 300 is formed and bonded to receive the heat sink 304, and receives heat from the heat sink 304 to radiate heat to the outside.
즉, 상기 서브마운트(300)와 상기 방열판(304)은 상기 사파이어 기판(307)의 발광면을 제외한 모든 면을 둘러싸도록 역피라미드 형태로 형성되고, 상기 역 피라미드 형태의 방열판(304)상에 외부 접속 단자로서의 와이어 패드(311)가 형성된다.That is, the submount 300 and the heat sink 304 are formed in an inverted pyramid form so as to surround all surfaces except the light emitting surface of the sapphire substrate 307, and are externally disposed on the heat sink 304 having the inverted pyramid shape. The wire pad 311 as a connection terminal is formed.
도 6은 본 발명에 따른 역 피라미드형 플립칩에서 발생된 열이 빠져나가는 것을 나타내는 도면이다. 이에 도시된 바와 같이, 본 발명에 따른 역피라미드형 발광 다이오드(LED) 플립칩은, 은으로 코팅된 반사막(310)이 상기 방열판(304)과 상기 발광 다이오드의 반도체층(312), n형층(309) 및 상기 사파이어 기판(307)의 양측면과 상기 서브 마운트(300)의 반사홈 영역에 형성된 방열판(304) 은으로 코팅된 반사막(310)이 형성되어 있다.여기서, 발광 다이오드 칩의 단면이 역 피라미드 형태이고, 상기 역 피라미드 형태인 칩의 양측면은 은 코팅되어 있으며, 방열판(304)와 칩의 옆면이 연속적으로 접촉되어 있음을 알 수 있다.6 is a view showing that heat generated in the inverted pyramidal flip chip according to the present invention is released. As shown in the drawing, the reverse pyramid type light emitting diode (LED) flip chip according to the present invention includes a silver coated reflective film 310 having the heat sink 304, the semiconductor layer 312 of the light emitting diode, and an n type layer ( 309 and a reflective film 310 coated with the heat sink 304 formed on both side surfaces of the sapphire substrate 307 and the reflective groove area of the sub-mount 300 are formed. It can be seen that both sides of the chip, which are pyramidal and inverted pyramid, are coated with silver, and the heat sink 304 and the side of the chip are in continuous contact with each other.
삭제delete
이는 종래의 발광 다이오드가 칩 하부 방열판(304)에서만 방열되던 것에 반해, 칩 내부에 발생하는 열이 옆면을 통해서도 빠져나갈 수 있게 한다.This allows the heat generated inside the chip to escape through the side surface, whereas the conventional light emitting diode is radiated only in the heat sink 304 under the chip.
따라서, 발광 다이오드에서 발생하는 내부 열 저항을 칩의 하부면 뿐만 아니라 칩의 측면에서도 방열시킬 수 있어 방열 효과를 극대화 시킬 수 있다.Therefore, the internal thermal resistance generated by the light emitting diode can be radiated not only at the bottom of the chip but also at the side of the chip, thereby maximizing the heat radiation effect.
또한, 실리콘 서브마운트도의 반사홈 형태도 역 피라미드 형태로 깎아 주어 칩의 측벽과도 접촉하게 만들어 열 저항을 낮춤으로써 신뢰성과 효율을 높인다.In addition, the reflection groove shape of the silicon submount diagram is also cut into an inverted pyramid shape to make contact with the sidewall of the chip, thereby lowering the thermal resistance, thereby increasing reliability and efficiency.
여기서, 상기 방열판(304)은 발광된 빛을 반사하는 반사 역할뿐만 아니라 열전도율이 높아 방열하는데 사용됨을 알 수 있다.Here, it can be seen that the heat sink 304 is used not only to reflect the emitted light but also to heat radiation due to high thermal conductivity.
이와같이, 칩의 측면에 은 코팅(Ag coating)을 해줌으로써 측면에서의 반사율을 높여주어 빛의 손실되는 빛을 줄인다.In this way, the silver coating on the side of the chip increases the reflectance at the side to reduce the light loss.
또한, 서브마운트도 역 피라미드 형태로 깎아 주어 칩의 측면과도 접촉하게 만들어 열 저항을 낮춤으로써 신뢰성과 효율을 높인다.The submounts are also cut into inverted pyramids to make contact with the sides of the chip, reducing thermal resistance, increasing reliability and efficiency.
이상에서 살펴본 바와 같이, 본 발명은 고출력 LED의 단면을 역 피라미드 형태로 만들어 줌으로써 광자의 이동 거리를 줄이고 그 결과 내부 광 손실을 줄일 수 있게 한다.As described above, the present invention makes the cross section of the high-power LED into an inverted pyramid shape, thereby reducing the moving distance of photons and consequently reducing the internal light loss.
또한, 역 피라미드 형태인 칩의 옆면에 금 코팅을 함으로써 옆면을 통해 손실되는 빛을 줄일 수 있게 하고, 알루미늄의 방열판과 칩의 옆면이 상호 접촉되도록 하여 칩 내부에 발생하는 열이 옆면을 통해 빠져 나갈수 있게 한다.In addition, by coating gold on the side of the chip in the form of an inverted pyramid, it is possible to reduce the light lost through the side, and the heat sink of the aluminum and the side of the chip are in contact with each other so that the heat generated inside the chip can escape through the side. To be.
이를 통해, 발광 다이오드의 발광면에서의 빛의 반사량을 증가시키고, 칩의 옆면으로의 열 저항의 방열을 통해 내부 열을 줄임으로써 발광 다이오드의 발광 효율을 극대화 시킬 수 있게 한다.Through this, it is possible to maximize the luminous efficiency of the light emitting diode by increasing the amount of reflection of light on the light emitting surface of the light emitting diode and reducing the internal heat through the heat radiation of the heat resistance to the side of the chip.
도 1은 종래에 따른 플립 칩 방식의 고출력 LED의 구조를 나타낸 칩 단면.1 is a chip cross-sectional view showing the structure of a conventional high power LED of the flip chip method.
도 2는 종래에 따른 플립칩 형태의 고출력 LED에서 사파이어 기판을 통해 빛이 발광되는 모습을 나타내는 도면.2 is a view showing a state in which light is emitted through a sapphire substrate in a flip-chip type high-power LED according to the prior art.
도 3는 본 발명에 따른 고출력 LED를 위한 역 피라미드형 플립 칩의 구조를나타낸 도면.3 illustrates the structure of an inverted pyramid flip chip for a high power LED according to the present invention;
도 4는 본 발명에 따른 역 피라미드형 플립칩에서의 광자(photon)의 이동 거리를 보여주는 도면.4 is a diagram showing a moving distance of a photon in an inverted pyramidal flip chip according to the present invention;
도 5은 본 발명에 따른 역 피라미드형 플립칩의 측면을 은 코팅하였을 경우의 발광된 빛의 반사를 나타내는 도면.5 is a view showing the reflection of the emitted light when the silver-coated side of the inverted pyramidal flip chip according to the present invention.
도 6은 본 발명에 따른 역 피라미드형 플립칩에서 발생된 열이 빠져나가는 것을 나타내는 도면.6 is a view showing that heat generated in the inverted pyramidal flip chip according to the present invention is released.
<도면의 주요 부호에 대한 설명><Description of Major Symbols in Drawing>
300: 서브마운트 301: p형 전극300: submount 301: p-type electrode
303: 활성층 311: 와이어 패드303: active layer 311: wire pad
304: 방열판 305: 솔더볼304: heat sink 305: solder ball
306: n형 전극 307: 사파이어 기판306: n-type electrode 307: sapphire substrate
308: 솔더 메탈층 309: n형층308: solder metal layer 309: n-type layer
310: 반사막310: reflective film
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2002-0051769A KR100489042B1 (en) | 2002-08-30 | 2002-08-30 | Reverse-pyramidal flip chip for high output led |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2002-0051769A KR100489042B1 (en) | 2002-08-30 | 2002-08-30 | Reverse-pyramidal flip chip for high output led |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20040020239A KR20040020239A (en) | 2004-03-09 |
| KR100489042B1 true KR100489042B1 (en) | 2005-05-11 |
Family
ID=37324724
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2002-0051769A KR100489042B1 (en) | 2002-08-30 | 2002-08-30 | Reverse-pyramidal flip chip for high output led |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100489042B1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100996760B1 (en) | 2007-11-05 | 2010-11-25 | 리웅 펑 인더스트리얼 컴퍼니, 엘티디. | Led light emitter with heat sink holder and method for manufacturing the same |
| US8110843B2 (en) | 2008-10-01 | 2012-02-07 | Samsung Electronics Co., Ltd. | Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100623024B1 (en) * | 2004-06-10 | 2006-09-19 | 엘지전자 주식회사 | High Power LED Package |
| KR101155197B1 (en) * | 2005-02-07 | 2012-06-13 | 엘지이노텍 주식회사 | Optical module and manufacturing method thereof |
| KR100755279B1 (en) * | 2005-10-11 | 2007-09-04 | (주)더리즈 | Mount structure of LED and a method thereof |
| KR101298287B1 (en) * | 2010-09-06 | 2013-08-20 | 소닉스자펜 주식회사 | Pyramid type layered heat emitting plate and light emitting device comprising the same |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08102551A (en) * | 1994-09-30 | 1996-04-16 | Kyocera Corp | Semiconductor light emitting device and its manufacture |
| JPH10303494A (en) * | 1997-04-25 | 1998-11-13 | Furukawa Electric Co Ltd:The | Semiconductor optical function element |
| JPH11251644A (en) * | 1998-02-27 | 1999-09-17 | Matsushita Electron Corp | Semiconductor light emitting device |
| JPH11266058A (en) * | 1998-03-16 | 1999-09-28 | Toyoda Gosei Co Ltd | Gallium nitride compound semiconductor laser diode |
| JPH11340514A (en) * | 1998-05-22 | 1999-12-10 | Nichia Chem Ind Ltd | Flip-chip optical semiconductor element |
| JP2000299529A (en) * | 1999-02-08 | 2000-10-24 | Sharp Corp | Semiconductor laser element and its manufacture |
-
2002
- 2002-08-30 KR KR10-2002-0051769A patent/KR100489042B1/en active IP Right Grant
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08102551A (en) * | 1994-09-30 | 1996-04-16 | Kyocera Corp | Semiconductor light emitting device and its manufacture |
| JPH10303494A (en) * | 1997-04-25 | 1998-11-13 | Furukawa Electric Co Ltd:The | Semiconductor optical function element |
| JPH11251644A (en) * | 1998-02-27 | 1999-09-17 | Matsushita Electron Corp | Semiconductor light emitting device |
| JPH11266058A (en) * | 1998-03-16 | 1999-09-28 | Toyoda Gosei Co Ltd | Gallium nitride compound semiconductor laser diode |
| JPH11340514A (en) * | 1998-05-22 | 1999-12-10 | Nichia Chem Ind Ltd | Flip-chip optical semiconductor element |
| JP2000299529A (en) * | 1999-02-08 | 2000-10-24 | Sharp Corp | Semiconductor laser element and its manufacture |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100996760B1 (en) | 2007-11-05 | 2010-11-25 | 리웅 펑 인더스트리얼 컴퍼니, 엘티디. | Led light emitter with heat sink holder and method for manufacturing the same |
| US8110843B2 (en) | 2008-10-01 | 2012-02-07 | Samsung Electronics Co., Ltd. | Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device |
| US8415181B2 (en) | 2008-10-01 | 2013-04-09 | Samsung Electronics Co., Ltd. | Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device |
| US8809888B2 (en) | 2008-10-01 | 2014-08-19 | Samsung Electronics Co., Ltd. | Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20040020239A (en) | 2004-03-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7692207B2 (en) | Packaging designs for LEDs | |
| US7170100B2 (en) | Packaging designs for LEDs | |
| JP3850665B2 (en) | Semiconductor light emitting emitter package | |
| US9882104B2 (en) | Light emitting device package having LED disposed in lead frame cavities | |
| JP4818215B2 (en) | Light emitting device | |
| US9553243B2 (en) | Light emitting device | |
| US9966366B2 (en) | Lighting device | |
| US8048692B2 (en) | LED light emitter with heat sink holder and method for manufacturing the same | |
| JP2004517502A (en) | Light emitting diode and method of manufacturing the same | |
| KR20080049828A (en) | Light emitting device | |
| US9347624B2 (en) | Lighting apparatus having improved light output uniformity and thermal dissipation | |
| KR20100091207A (en) | Improved led structure | |
| JP5036222B2 (en) | Light emitting device | |
| JP2008311471A (en) | Light emitting device | |
| US8227829B2 (en) | Semiconductor light-emitting device | |
| US8084283B2 (en) | Top contact LED thermal management | |
| JP2007036199A (en) | Light-emitting apparatus | |
| KR100489042B1 (en) | Reverse-pyramidal flip chip for high output led | |
| JP4820133B2 (en) | Light emitting device | |
| RU2212734C1 (en) | Semiconductor light source | |
| JP3952075B2 (en) | Light emitting device | |
| CN115435253A (en) | Lighting module | |
| JP2007243057A (en) | Light-emitting device | |
| KR101448588B1 (en) | Light emitting diode and manufacturing method thereof | |
| KR20210016779A (en) | Semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20130405 Year of fee payment: 9 |
|
| FPAY | Annual fee payment |
Payment date: 20140407 Year of fee payment: 10 |
|
| FPAY | Annual fee payment |
Payment date: 20160412 Year of fee payment: 12 |
|
| FPAY | Annual fee payment |
Payment date: 20170405 Year of fee payment: 13 |
|
| FPAY | Annual fee payment |
Payment date: 20180409 Year of fee payment: 14 |
|
| FPAY | Annual fee payment |
Payment date: 20190411 Year of fee payment: 15 |