KR100468392B1 - Filamented semiconductor led structure - Google Patents

Abstract

PURPOSE: A structure of a filamented semiconductor light emitting diode is provided to use various lamps by attaching NS-magnetized electrodes to both ends of a semiconductor pn junction. CONSTITUTION: The NS-magnetized electrodes are attached to the semiconductor pn junction on a wafer in a conventional semiconductor process by using conductive adhesive(33). A south pole is attached to the p layer of the pn junction so that the surface of the south pole forms a north pole. A north pole is attached to the n layer of the pn junction so that the surface of the north pole forms a south pole. A plurality of electrodes on the semiconductor pn junction are arranged in another electrode on a semiconductor pn junction in the same direction so that an electrical contact is smoothly carried out.

Description

Filamented Semiconductor Light Emitting Diode Structure {FILAMENTED SEMICONDUCTOR LED STRUCTURE}

The present invention relates to a multilayer semiconductor light emitting diode assembly, and more particularly, to produce various light emitting lamps by forming a plurality of series arrays or using one or more filaments by using both ends of a semiconductor pn junction as a magnetized electrode of NS. The present invention relates to a filamentated semiconductor light emitting diode structure that can be utilized in various ways than a conventional lamp.

In general, the light emitting diode is a semiconductor diode that emits light. It is a kind of semiconductor used to send and receive electric signals by converting electrical signals into infrared rays or light using the characteristics of compound semiconductors. It is used for gig gig. These light emitting diodes are provided with a forward electric field to the pn junction of the semiconductor and electrons and holes are injected to recombine at the junction. Light of a wavelength corresponding to the prohibited energy of the semiconductor constituting the junction according to the "eV" is generated.

The basic material is a group III-V compound semiconductor such as GaP, GaAs, InP, etc., and in order to obtain various emission colors, the mixed crystal composition of these crystals is controlled by epitaxial growth method, and the band width is controlled. Although basic, impurity level mediated electron transfer charging is also used. The light-emitting device does not involve the emission and absorption of the phonome (lattice vibration, equivalent to heat) when the electrons excited in the conduction band return to the original thermal equilibrium state, so that the highly efficient light emission in the direct transition type crystal transitioning to the valence band It is obtained.

On the other hand, indirect transition type crystals in which electrons excited in the conduction band transition to the valence band with the emission and absorption process of the phenomenon generate little emission. For this reason, a method in which a specific impurity is introduced to bind the excited electrons to this impurity level and then transition to the valence band is used to emit light. Thus, red, orange, green, and yellow thorns are applied to GaP. Light emitting diodes are commercially available.

By the way, the conventional light emitting diode is a part name, such as chip and gold wire, lead frame and cathode, anode, and epoxy. FIG. 1 shows a conventional light emitting diode structure. The light emitting diode structure 20 is used as a lamp as a completed element by forming electrodes 21 and 22 conducted to an anode at a pn junction of a semiconductor. Therefore, although the visible light emitting diodes, which are assembled as lamps and used as a light source for various electronic products, a signal lamp, and an electronic signboard, are used for various purposes, various demands of designers and consumers are varied, and a variety of means for meeting them are also available. It is being developed.

As an example, Japanese Patent Application Laid-Open No. 11-251642 (name of the invention: a method for reducing reflection occurring at the light emitting interface of a semiconductor light emitting diode and a semiconductor light emitting diode) discloses a semiconductor light emitting diode having an improved light output. That is, by depositing a pair of first and second semiconductor layers each having an optical thickness of wavelength 1/4 of the light wave and having a refractive index in a predetermined order on both sides, reduction of totally effective reflection due to destructive interference And effective increase in light output can be achieved, and does not impair current flow between the surface contact and the active region.

At the same time, band discontinuities along the enhancement region can be used for multiple carriers due to transverse current propagation at the interface between the layers, and the light output is evenly distributed over a range of active regions not particularly covered by contact surfaces. Since the atomic components of the layer device previously existed in semiconductor diodes, they can be produced epitaxially without supplying new materials.

The present invention has been made in view of the above circumstances, and is a semiconductor light emitting diode assembly that can be utilized in various forms than conventional light emitting lamps. It is an object of the present invention to provide a filamentated semiconductor light emitting diode structure capable of using a light emitting lamp for various purposes by making one to a plurality of filaments.

1 is a cross-sectional view showing a conventional light emitting diode structure,

2 is a cross-sectional view showing a light emitting diode structure according to an embodiment of the present invention;

FIG. 3 is a view of arranging a plurality of light emitting diode structures shown in FIG. 2;

4 is a circuit diagram showing a light emitting diode structure of the present invention;

5 and 6 are diagrams showing the semiconductor light emitting diode structure of the present invention as a subfilament;

7 is a cross-sectional view showing a filamentated semiconductor light emitting diode structure of the present invention;

8 is a voltage-time diagram when the filamented semiconductor light emitting diode structure of the present invention is operated.

♠ Explanation of symbols for the main parts of the drawing ♠

1-6: light emitting diode 10: light emitting diode assembly

11: resistance 23, 24: magnetized electrode

The present invention for achieving the above object is to integrate the magnetized electrodes (23, 24) of the NS with a conductive adhesive on the wafer-like semiconductor pn junction (p, n) of the general semiconductor process, and the S pole of the p layer Surfaces of the N-poles are attached to the n-layers and the S-poles are formed to the n-layers by the adhesion, and other semiconductor pn junctions (p, n) are formed on the semiconductor pn junctions (p, n). n) The electrodes 23 and 24 are aligned in series in the same direction, so that electrical contact is smooth.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 2 illustrates a light emitting diode according to an embodiment of the present invention. The present invention provides a plurality of series arrays or the like by using both ends of a semiconductor pn junction (p, n) as NS magnetized electrodes (23, 24). By using one to a plurality of filaments to produce a variety of light emitting lamps can be utilized in various ways than conventional lamps.

That is, the magnetized electrodes 23 and 24 of the NS are integrated into the wafer-like semiconductor pn junctions (p, n) of the general semiconductor process with a conductive adhesive, and the surface of the N pole is attached to the p layer by the attachment of the S pole. The attachment of the N poles to the n layer forms the S poles respectively. As shown in FIG. 3, the semiconductor pn junction (p, n) phase electrodes 23 and 24 are aligned with a plurality of semiconductor pn junction (p, n) phase electrodes 23 and 24 in the same direction. Electrical contact is desired.

Therefore, the magnetic force between the semiconductor pn junction (p, n) electrodes 23 and 24 and the other semiconductor pn junction (p, n) electrodes 23 and 24 acts as an attractive force and sequentially becomes NSpnNSNSpnNS, which is magnetic. Electrodes make it easy to align adjacent light emitting diode elements in the same direction and to make electrical contact by magnetic force. When the neighboring light emitting diode elements are not in the same direction, the magnetic force therebetween acts as a repulsive force to push them out.

FIG. 4 is a circuit diagram showing a light emitting diode structure of the present invention, wherein the semiconductor pn junction (p, n) phase electrodes 23 and 24 and other semiconductor pn junction (p, n) phase electrodes ( Since a plurality of 23 and 24 are connected in series to form a filament-shaped light emitting diode assembly 10, current limiting resistors 11 are connected in series to operate and turn on / flashing the light emitting diodes. Alignment makes smooth electrical contact as described above.

In order to mass-produce the filament-shaped light emitting diode assembly 10, an electrode magnetized up and down using a conductive adhesive as shown in FIG. 2 in a semiconductor pn junction (p, n) arranged on a wafer in a general semiconductor process. The NS of (23) and the magnetized electrode 24 are integrated, and the semiconductor pn junctions (p, n) and the electrodes 23, 24 arranged on the wafer are sequentially stacked up and down in the same manner. Each of them is cut and used. In addition, the NS of the magnetized electrode 23 and the magnetized electrode 24 may be integrated after the semiconductor pn junctions p and n arranged on a wafer in a general semiconductor process, and then cut and used.

5 and 6 show the semiconductor light emitting diode structure of the present invention as a subfilament, and the semiconductor pn junction of the semiconductor light emitting diode structure of the present invention arranged on a wafer in a general semiconductor process by applying FIGS. The semiconductor pn junctions p and n and the electrodes 23 and 24 are sequentially stacked in such a manner as to integrate NS of the magnetized electrode 23 and NS of the magnetized electrode 24 above and below p and n . As shown in Fig. 5, a series of light emitting diode assemblies (filament shapes) connected in series are manufactured and used as subfilaments.

Here, an example in which six light emitting diodes 1-6 are stacked is described. The integrated light emitting diodes 1-6 are formed of a light emitting diode subfilament 30 stacked with red, green, and blue light emitting diodes stacked from the bottom, and red, green, and blue light emitting diodes stacked thereon, such that the circuit configuration is illustrated in FIG. 6. When it turns on, it turns white. The rated voltage of the light emitting diode subfilament 30 thus constructed is 18 V DC with two red light emitting diodes 3.6 V (ie 1.8 * 2) and two green and blue light emitting diodes 15.2 V (ie 3.8 * 4). .

The transparent supporter 34 is erected around the light emitting diode subfilament 30, and the conductive thin film 31 is placed at each end through each contact welding point 35, and the conductive thin film 31 is electrically conductive on the surface thereof. The sub-electrode 32 is formed through the adhesive 33. As illustrated in FIG. 6, the light emitting diode subfilament 30 having the above-described light emitting diode subfilament 30 has a conductive adhesive 33 and a conductive thin film 31 interposed therebetween in each sub-electrode 32. As a light emitting diode device, red, green, and blue light emitting diodes (1-3) and red, green, and blue light emitting diodes (4-6) are linearly and linearly structured in series.

Therefore, in the present invention, for example, the light emitting diode subfilament 30 may be formed in units of six light emitting diodes 1 to 6, and thus a filamentated semiconductor light emitting diode structure may be used as a finished product.

Meanwhile, the subfilament shown in FIG. 5 includes the conductive adhesive 33 and the conductive thin film 31 of the sub-electrode 32 integrated into the contact points 35 across the light emitting diode sub-filament 30 in the transparent supporter 33. ), And moisture generated therein may be vacuum pumped through one side of the transparent supporter 33 and then sealed to be used as a vacuum glass state.

FIG. 7 is a cross-sectional view showing the filamented semiconductor light emitting diode structure of the present invention, and FIG. 8 is a voltage-time diagram when the filamented semiconductor light emitting diode structure of the present invention is operated. The filamentated semiconductor light emitting diode structure of the present invention can be manufactured by directly constructing a light emitting diode device processed on a general wafer as shown in FIGS. 2 to 4 for mass production as shown in FIGS. For example, by using the subfilament shown in Figures 5 and 6 can be formed of filaments in 12 units.

That is, the subfilaments 41-52 shown in FIG. 5 are arranged in a line and integrated between the subfilaments 41 and 42 through an adhesive or a contact point 40 and thus the integrated subfilaments 41-52. The transparent guide 53 is placed around the periphery), and the terminals 56 are contacted at both ends thereof, thereby molding them 54 and 55, respectively.

In order to use the filamented semiconductor light emitting diode structure of the present invention configured as described above, power is supplied to the terminal 56. As described above, the rated voltage of the light emitting diode subfilament is two red light emitting diodes 3.6. Since 15.2 V of V and two green and blue light emitting diodes is 18.8 V, 18.8 V * 12 becomes 225.6 V, which is an approximate effective voltage of 220 V. Thus, the oblique portion shown in FIG. 8 shows a state in which the filamented semiconductor light emitting diode structure of the present invention is turned on.

As described above, according to the present invention, a semiconductor light emitting diode assembly which can be utilized in various forms than a conventional light emitting lamp is attached to both ends of a semiconductor pn junction with a magnetized electrode of NS, and thus a plurality of series arrays or one to many using them. By filamentation of the dogs, there is an advantage that the use of light emitting lamps for various purposes can be achieved.

In addition, although various types of filamentated semiconductor light emitting diode structures have been described in the embodiments according to the present invention, those skilled in the art will appreciate that various modifications, changes, and additions can be made without departing from the spirit of the present invention. It will be appreciated that the back is possible.

Claims (6)

The magnetized electrode of NS is integrated with a conductive adhesive on a wafer-like semiconductor pn junction in a general semiconductor process, and the surface is N by attaching the S pole to the p layer, and the surface by S by attaching the N pole to the n layer. By forming each pole, And a plurality of other semiconductor pn junction electrodes arranged in the same direction on the semiconductor pn junction electrode to facilitate electrical contact. The method of claim 1, And a plurality of semiconductor pn junction electrodes and a plurality of other semiconductor pn junction electrodes connected in series so that a filamentary light emitting diode assembly is connected in series with a current limiting resistor. In the general semiconductor process, the semiconductor pn junctions p and n and the electrodes of the magnetized electrode 24 are integrated by integrating the NS of the magnetized electrode 23 and the NS of the magnetized electrode 24 above and below the semiconductor pn junctions p and n arranged on the wafer. 23 and 24 are sequentially stacked to form a series of connected light emitting diode assemblies (filament shapes), and six light emitting diodes 1 to 6 are stacked as subfilaments. The integrated light emitting diodes 1 to 6 are filamentized, in which red, green, and blue light emitting diodes are stacked from the bottom of the light emitting diode subfilament 30, and red, green, and blue light emitting diodes are stacked thereon. Semiconductor light emitting diode structure. The method of claim 3, wherein The transparent supporter 34 is erected around the light emitting diode subfilament 30, and the conductive thin film 31 is placed at each end through each contact welding point 35, and the conductive thin film 31 is electrically conductive on the surface thereof. A filamentated semiconductor light emitting diode structure, characterized in that the sub-electrode 32 is formed through the adhesive (33). delete delete