KR100459897B1 - Optoelectronic integrated device and optical transmitting module employing it - Google Patents

Abstract

Disclosed are a composite device in which two or more semiconductor devices among light emitting devices, light receiving devices, and semiconductor electronic devices are integrally formed on a low-cost silicon substrate through a series of semiconductor manufacturing processes and an optical transmission module employing the same.

The disclosed composite device uses a silicon substrate, and is an integrated type in which two or more semiconductor devices are formed through a series of semiconductor manufacturing processes. In addition, the manufacturing process is simple and the manufacturing cost is low, and a separate base such as a PCB is unnecessary. Single chip is available at low cost. In addition, when the disclosed composite device is applied to a transmitter, a receiver, or a transceiver, an inexpensive optical transmission module can be realized.

Description

Composite device and optical transmitting module employing the same {Optoelectronic integrated device and optical transmitting module employing it}

The present invention relates to a composite device in which a plurality of types of semiconductor devices including an optical device are single-chip and an optical transmission module employing the same.

In general, light emitting devices such as light emitting diodes (LEDs) and semiconductor laser diodes are directly formed on compound semiconductor substrates having a transition bandgap, and electronic devices may be formed on a silicon substrate in consideration of low cost. Form. Hereinafter, the electronic device formed on the semiconductor substrate is referred to as a semiconductor electronic device. In addition, since silicon can detect light with sufficient sensitivity, for example, in the visible light region, an ordinary light receiving element is formed on a silicon substrate.

Therefore, in order to construct a composite device by modularizing two or more of light emitting devices, light receiving devices, and semiconductor electronic devices, two or more of light emitting devices, light receiving devices, and semiconductor electronic devices, which are formed on separate semiconductor substrates, respectively, may be formed on a base substrate. The connection is performed using a method such as die bonding or wire bonding.

As such, the conventional light emitting device is mainly manufactured using expensive compound semiconductors, and the conventional light receiving device and the semiconductor electronic device are mainly manufactured using low cost silicon.

Therefore, in order to construct a composite device in which two or more of the light emitting device, the light receiving device, and the semiconductor electronic device are united in a single chip, two or more semiconductor devices manufactured separately are separately attached to the base substrate, and the two or more semiconductors are used. Since a process of properly connecting the device and the substrate serving as the base or connecting the two or more semiconductor devices is necessary, the manufacturing process of the composite device is complicated and expensive. In particular, there is a disadvantage that a separately designed PCB (printed circuit board) is required as the base substrate.

SUMMARY OF THE INVENTION The present invention has been made to improve the above-described problems, and is formed by integrating two or more semiconductor devices among light emitting devices, light receiving devices, and semiconductor electronic devices on a low-cost silicon substrate through a series of semiconductor manufacturing processes. It is an object of the present invention to provide a low-cost composite device capable of forming a single chip and an optical transmission module employing the same.

1 is a view schematically showing the configuration of a composite device according to a first embodiment of the present invention;

2 is a cross-sectional view showing a specific configuration of a silicon optical device applied to the composite device according to the present invention;

3A is a view showing the structure of the p-n junction when the doped region is formed to an extremely shallow depth by non-equilibrium diffusion in the silicon optical device of FIG.

FIG. 3B shows energy bands of quantum wells (QWs) formed in the longitudinal and lateral directions of the surface at the p-n junction shown in FIG. 3A by non-equilibrium diffusion; FIG.

4 is a plan view showing one embodiment of the first and second silicon optical device structure of the composite device according to the first embodiment of the present invention applying the silicon optical device as described with reference to FIGS.

5 is a cross-sectional view taken along the line VV of FIG. 4;

6 is a plan view showing another embodiment of the first and second silicon optical device structure of the composite device according to the first embodiment of the present invention applying the silicon optical device as described with reference to FIGS.

7 is a cross-sectional view taken along line VII-VII of FIG. 6;

8 is a schematic view of an optical transmission module according to a first embodiment of the present invention;

9 is a view schematically showing the configuration of a composite device according to a second embodiment of the present invention;

10 is a schematic view showing an optical transmission module according to a second embodiment of the present invention;

11 is a plan view schematically illustrating a composite device according to a third embodiment of the present invention;

12 is an enlarged cross-sectional view taken along the line II-XIII of FIG. 11;

FIG. 13 is an enlarged plan view of portions of the first and second silicon optical devices of FIG. 11;

14 is a schematic view showing an optical transmission module according to a third embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

1,30,50 ... composite 1a, 1b, 10,31,50a, 50b ...

5,35 ... semiconductor electronics 7,56 ... trench

11 ... substrate 13 ... control film

14 ... p-n junction 15 ... doped region

17,57a, 57b ... first electrode 19,59a, 59b ... second electrode

21,61 ... 1st transceiver 25,65 ... 2nd transceiver

23,43,63 ... Doparo 41 ... Transmitter

45 ... receiver

The composite device according to the present invention for achieving the above object comprises at least one optical device and at least one electronic device formed on a substrate based on n-type or p-type silicon, the optical device, A doped region extremely shallowly doped to the opposite side of the substrate by a predetermined dopant on one surface; And first and second electrodes formed on the substrate.

Here, the silicon optical element includes a first silicon optical element used as a light emitting element and a second silicon optical element used as a light receiving element.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the composite device and the optical transmission module employing the same according to the present invention.

1 is a view schematically showing the configuration of a composite device according to a first embodiment of the present invention.

Referring to the drawings, the composite device 1 according to the first embodiment of the present invention, at least one silicon optical device (1a) (1b) and at least one formed integrally with the substrate 11 based on silicon A semiconductor electronic device 5 is provided.

The substrate 11 is a semiconductor substrate based on a predetermined semiconductor material including silicon (Si), for example, Si, SiC, or diamond, and is doped with n-type or p-type.

In the present embodiment, the at least one silicon optical element 1a, 1b is, for example, a first silicon optical element 1a used as a light emitting element and a second silicon optical element 1b used as a light receiving element. It can be made of).

As described below with reference to FIGS. 2 and 3, the first and second silicon optical devices 1a and 1b may be extremely shallowly doped on one surface of the substrate 11 in a manner opposite to the substrate 11. The doped region 15 is formed, and the generation and annihilation bond of the electron and the hole pair is caused by the quantum confinement effect at the pn junction region 14 of the doped region 15.

The at least one semiconductor electronic device 5 is suitable for implementing at least one of the first and second silicon optical devices 1a and 1b, so that the first and second silicon optical devices 1a and 1b. And a single or a plurality of semiconductor electronic devices formed integrally with the substrate 11 or a composite circuit formed of a plurality of semiconductor electronic devices. In the present invention, the semiconductor electronic device 5 is not limited to a specific device, and various modifications and application examples are possible.

The semiconductor electronic device 5 may be provided to drive at least one of driving, controlling, amplifying, and modulating a silicon optical device.

For example, the semiconductor electronic device 5 may be a driving circuit driving the first silicon optical device 1a to output light, and a photodetection signal is output from the second silicon optical device 1b. It may be an amplifying circuit to make it possible, or may be a composite circuit suitable for implementing both the first and second silicon optical element (1a) (1b).

The semiconductor electronic device 5 and the first and second silicon optical devices 1a and 1b constituting the composite device 1 according to the first embodiment of the present invention as described above are provided with a series of semiconductors on the substrate 11. It is formed integrally through the manufacturing process and can be single chipped.

A detailed configuration of the silicon optical device 10 applied to the first and second silicon optical devices 1a and 1b to the composite device 1 according to the first embodiment of the present invention is shown in FIG. 2. The substrate 11 in FIG. 2 is substantially the same as in FIG. 1.

Referring to FIG. 2, the silicon optical device 10 may be formed of, for example, a doped region 15 formed on one surface of a substrate 11 based on silicon doped with n-type, and electrically connected to the doped region 15. The first and second electrodes 17 and 19 are formed on the substrate 11 to be connectable. In addition, the silicon photo device 10 functions as a mask when the doped region 15 is formed, and the control layer 13 to form the doped region 15 to a desired ultra-shallow thickness. It is preferable to further provide on one surface of the substrate 11. The control film 13 may be selectively removed after the doping region 15 is formed.

The doped region 15 may inject a predetermined dopant, for example, boron or phosphorous, into the substrate 11 through an opening of the control layer 13 by a non-equilibrium diffusion process. A region doped with a type opposite to 11), for example, p + type.

At the time of doping, at least one of quantum wells, quantum dots, and quantum wires is formed at the boundary portion of the doped region 15 with the substrate 11, that is, at the pn junction 14. The doped region 15 is doped to a desired extremely shallow depth so that any one is formed to exhibit the photoelectric conversion effect, ie, the generation or dissociation of electron and hole pairs, with high quantum efficiency by the quantum confinement effect. shallow dopping).

In this case, a quantum well is mainly formed at the p-n junction 14, and a quantum dot or a quantum line may be formed. In addition, two or more of the quantum wells, the quantum dots, and the quantum lines may be formed in the p-n junction portion 14. In the following description, quantum wells are formed in the p-n junction 14 for the sake of simplicity. Although it will be described below that the quantum wells are formed in the p-n junction site 14, this means at least one of quantum wells, quantum dots, and quantum lines.

3A shows the structure of the p-n junction site 14 when the doped region 15 is formed to an extremely shallow depth by non-equilibrium diffusion. FIG. 3B shows the energy band of quantum wells (QW) formed in the longitudinal and lateral direction of the surface at the p-n junction site 14 shown in FIG. 3A by non-equilibrium diffusion. In FIG. 3B, Ec represents a conduction band energy level, Ev represents a valence band energy level, and Ef represents a Fermi energy level. Such energy levels are well known in the semiconductor related art, and thus detailed descriptions thereof will be omitted.

As shown in FIGS. 3A and 3B, the p-n junction site 14 has a quantum well structure in which different doping layers are alternately formed, and the well and the barrier are approximately 2 nm and 3 nm.

As such, extremely shallow doping to form the quantum well at the p-n junction 14 may be formed by optimally controlling the thickness of the control layer 13 and the diffusion process conditions.

Due to the proper diffusion temperature during the diffusion process and the modified potential of the surface of the substrate 11, the thickness of the diffusion profile can be controlled, for example, 10-20 nm, thus allowing for extremely shallow diffusion profiles. This creates a quantum well system. Here, the potential of the surface of the substrate 11 is deformed by the thickness of the initial control film 13 and the surface pretreatment, and deepens as the process proceeds.

The control layer 13 is preferably a silicon oxide film (SiO ₂ ) having an appropriate thickness such that the doped region 15 is formed to an extremely shallow doping depth. The control film 13 is formed in a mask structure by, for example, forming a silicon oxide film on one surface of the substrate 11 and then etching the opening portion for the diffusion process using a photolithography process.

It is known in the diffusion technology that if the thickness of the silicon oxide film is thicker or lower than the optimum thickness (thousands of kPa), the vacancy mainly affects the diffusion and the diffusion occurs deeply, and the thickness of the silicon oxide film is larger than the proper thickness. At thin or high temperatures, Si self-interstitial mainly affects diffusion, causing deep diffusion. Therefore, when the silicon oxide film is formed to an appropriate thickness in which Si self-interstitial and vacancy are generated at a similar rate, the Si self-interstitial and vacancy are bonded to each other and do not promote diffusion of the dopant, thereby enabling extremely shallow doping. . Here, since physical properties related to vacancy and self-interstitial are well known in the art related to diffusion, a detailed description thereof will be omitted.

Herein, when the substrate 11 is doped with p-type, the doped region 15 is doped with n + -type.

The first electrode 17 is formed on one surface of the substrate 11 on which the doped region 15 is formed, and the second electrode 19 is formed on the opposite surface of the substrate 11. 2 illustrates an example in which the first electrode 17 is formed to be in contact with an outer portion of the doped region 15 by using an opaque metal material. The first electrode 17 may be entirely formed on the doped region 15 using a transparent electrode material such as indium tin oxide (ITO).

Here, instead of forming the second electrode 19 on the bottom surface of the substrate 11, both the first and second electrodes 17 and 19 may be formed on the surface on which the doped region 15 is formed.

For example, the silicon optical device 10 may be formed such that a portion including the doped region 15 forms a mesa structure. In this case, the first electrode 17 may be formed on one surface of the substrate 11 on which the doped region 15 is formed, and the second electrode 19 may be formed on the stepped portion around the mesa structure.

In the silicon optical device 10 as described above, since a quantum well capable of generating and dissociating an electron and a hole pair may be formed at the pn junction portion 14 of the doped region 15 with the substrate 11. It can be used as a light emitting element or a light receiving element.

That is, the silicon optical device 10 functions as a light emitting device as follows. For example, when a DC voltage (or current) is applied through the first and second electrodes, carriers, that is, electrons and holes, are injected into the quantum well at the pn junction, and subband energy in the quantum well is subbanded. energy is recombined through the energy level. In this case, electroluminescence (EL) of various wavelengths is generated according to a state in which carriers are combined.

In addition, the silicon optical element 10 functions as a light receiving element as follows. When light is incident and photons are absorbed at the pn junction site 14, which is a quantum well structure, electrons and holes are respectively subband energy levels in the quantum well 31 formed at the pn junction site 14. Here it is. Therefore, when an external circuit, for example, the load resistor 18 is connected, a current proportional to the amount of light emitted is output.

At this time, the absorption or emission wavelength in the silicon optical element 10 is a micro-cavity due to micro-defects formed on the surface of the substrate 11 (actually, the surface of the doped region 14). cavity). Therefore, by adjusting the size of the very small cavity by the fabrication process, the silicon optical element 10 of the desired absorption and emission wavelength band can be obtained.

Here, very small cavities arise due to the deformed potential due to the micro defects formed on the surface of the doped region 14. Thus, by modifying the modified potential, modification of the quantum wells is possible, which results in very small cavities.

As described above, the silicon photo device 10 has a quantum confinement effect due to a local change in the charge distribution potential at the pn junction 14 of the extremely shallowly doped region 15, Subband energy level is formed, and has high quantum efficiency.

Here, for the light emitting device and the silicon optical device 10 functioning as the light receiving device, Korean Patent Application No. 02-1431 filed by the present applicant (name of the invention: a silicon optical device and a light emitting device using the same) and Korea It is described in detail in patent application No. 02-7707 (the name of a silicon light receiving element). Therefore, the present invention is referred to the contents described in the patent applications, and a detailed description of the silicon optical device 10 will be omitted.

FIG. 4 shows the first and second silicon optical devices 1a (1a) of the composite device 1 according to the first embodiment of the present invention to which the silicon optical device 10 as described with reference to FIGS. 2 and 3 is applied. 1b) is a plan view showing an embodiment of the structure, Figure 5 is a cross-sectional view taken along the line V-V of FIG. 4 and 5 show the first and second silicon photo devices 1a and 1b with the control film 13 in FIG. 2 removed for the sake of simplicity. The first and second silicon optical devices 1a and 1b may further include the control layer 13 as described above.

4 and 5, each of the first and second silicon optical devices 1a and 1b is electrically connected to the doped region 15 formed on one surface of the substrate 11 and the doped region 15. The first electrode 17 is formed on the surface of the substrate 11 and the second electrode 19 is formed on the bottom surface of the substrate 11. Here, since the substrate 11, the doped region, the first and second electrodes 17 and 19 are substantially the same as in Figs. 2 and 3, they are indicated by the same reference numerals as in Figs. (11), the detailed description of the doped region 15, the first and second electrodes 17 and 19 will be omitted.

In the composite device 1 according to the first embodiment of the present invention, the first and second electrodes 17 and 19 are formed as shown in FIGS. 4 and 5, respectively. (B) is suitably patterned. That is, the first electrode 17 is formed on the outer circumference of the window for entering and exiting the light of the first and second silicon photo devices 1a and 1b on the side where the doped region 15 of the substrate 11 is formed. do. The second electrode 19 is patterned on the bottom surface of the substrate 11 so as to drive and / or control the first and second silicon photo devices 1a and 1b electrically independently of each other.

On the other hand, the composite device 1 according to the first embodiment of the present invention is between the first silicon optical device 1a and the second silicon optical device 1b, and the first and second silicon optical devices 1a and 1b. It is preferable to further have electrical partitions so that the space between the and surroundings can be electrically independent of each other. This electrical partition can be realized by etching the substrate 11 to a predetermined depth to form a trench 7. The trench 7 may additionally be further laminated with or filled with an insulating material.

FIG. 6 shows the first and second silicon optical devices 1a (1a) of the composite device 1 according to the first embodiment of the present invention to which the silicon optical device 10 as described with reference to FIGS. 2 and 3 is applied. 1b) is a plan view showing another embodiment of the structure, and FIG. 7 is a sectional view taken along line VII-VII of FIG. 4 and 5, the same reference numerals denote the same members having the same function. 6 and 7 show the first and second silicon optical elements 1a and 1b in a state where the control film 13 is removed for simplicity of illustration as in the case of FIGS. 4 and 5. Here, the first and second silicon optical devices 1a and 1b may further include the control layer 13 as described above.

6 and 7, the first and second silicon optical devices 1a and 1b may be formed such that a portion including the doped region 15 forms a mesa structure. In this case, the first electrode 17 is formed on one surface of the substrate 11 on which the doped region 15 is formed, and the second electrode 19 is a mesa of the first and second silicon optical devices 1a and 1b. It may be formed in the stepped portion around the structure.

The composite device 1 according to the first embodiment of the present invention as described above may be used as an optical signal transceiver in an optical transmission module.

The composite device 1 according to the first embodiment of the present invention as described above may have a structure in which a plurality of silicon optical devices are arranged in an array. At this time, the arrangement structure of the silicon optical element used as the light emitting element and the silicon optical element used as the light receiving element may be variously modified. For example, the silicon optical element used as the light emitting element and the silicon optical element used as the light receiving element may be alternately positioned or arranged in a line.

8 is a view schematically showing an optical transmission module according to a first embodiment of the present invention.

Referring to FIG. 8, the optical transmission module according to the first embodiment of the present invention may include first and second transceivers 21 and 25 disposed corresponding to each other so as to output an optical signal and receive an input optical signal. It is provided.

Each of the first and second transmitters 21 and 25 includes a composite device 1 according to the first embodiment of the present invention as described above. In this case, in the first and second transmitters 21 and 25, the first silicon optical element 1a used as the light emitting element of the first transmitter 21 is used as the light receiving element of the second transmitter 25. The first silicon optical element corresponding to the second silicon optical element 1b to be used, and the second silicon optical element 1b used as the light receiving element of the first transmitter 21 is used as the light emitting element of the second transmitter 25. It is disposed to correspond to the element 1a.

Meanwhile, the optical transmission module according to the first embodiment of the present invention may further include an optical waveguide 23, for example, an optical fiber, for transmitting an optical signal between the first and second transmitters 21 and 25. . In this case, the number of the optical waveguides 23 corresponds to the number of silicon optical elements of the first or second transmitters 21 and 25.

For example, the pair of first and second transmitters 21 and 25 used as light emitting elements and light receiving elements, respectively, as the composite element 1 according to the first embodiment of the present invention shown in FIG. If provided with the silicon optical element, the optical waveguide 23 is provided with a pair.

Here, the optical transmission module according to the first embodiment of the present invention may be used for transmitting and receiving optical signals through free space without the optical waveguide 23. The optical transmission module according to the first embodiment of the present invention and other embodiments described below may be applied to, for example, an optical interconnection between the circuit board 11 and the circuit board 11.

The optical transmission module according to the first embodiment of the present invention described with reference to FIG. 8 is applied to bidirectional optical communication. When the optical transmission module is provided in an array, bidirectional optical communication of a plurality of channels may be performed.

9 is a view schematically showing the configuration of a composite device 30 according to a second embodiment of the present invention. The composite device 30 according to the second embodiment of the present invention includes a single silicon optical device 31 and at least one semiconductor electronic device 35 used as a light receiving device or a light emitting device. The silicon photo device 31 and the semiconductor electronic device 35 may include the first and second silicon optical devices 1a and 1b and the semiconductor electronics of the composite device 1 according to the first embodiment of the present invention described above. Like the device 5, the silicon-based substrate 11 is integrally formed through a series of semiconductor manufacturing processes and can be single chipped.

The composite device 30 according to the second embodiment of the present invention as described above may be used as, for example, an optical signal transmitter or an optical signal receiver in an optical transmission module.

Here, the silicon optical device 31 is similar or identical in structure and function to the first or second silicon optical device 1b in the composite device 1 according to the first embodiment of the present invention. The semiconductor electronic device 35 is similar or identical in structure and function to the semiconductor electronic device 5 in the composite device 1 according to the first embodiment of the present invention. Therefore, the silicon optical device 31 and the semiconductor electronic device 35 will be described with reference to the description of the composite device 1 according to the first embodiment of the present invention, and a detailed description thereof will be omitted.

10 is a configuration diagram schematically showing an optical transmission module according to a second embodiment of the present invention.

Referring to FIG. 10, the optical transmission module according to the second embodiment of the present invention includes a transmitter 41 for outputting an optical signal and a receiver 45 for receiving the optical signal transmitted from the transmitter 41. ). In addition, an optical waveguide 43 for transmitting an optical signal between the transmitter 41 and the receiver 45 may be further provided with an optical fiber.

As the transmitter and the receiver 41 and 45, the composite device 30 according to the second embodiment of the present invention described with reference to FIG. 9 may be provided. At this time, when the composite device 30 is applied to the transmitter 41, the silicon optical device 31 is used as a light emitting device, the semiconductor electronic device 35 functions as a driving circuit of the silicon optical device 31. do. In addition, when the composite device 30 is applied to the receiver 45, the silicon optical device 31 is used as a light receiving device, the semiconductor electronic device 35 may be a load resistance.

The optical transmission module according to the second embodiment of the present invention as shown in FIG. 10 is applied to unidirectional optical communication. When a plurality of such optical transmission modules are provided in an array, unidirectional or bidirectional optical communication of a plurality of channels may be performed.

FIG. 11 is a plan view schematically illustrating a composite device 50 according to a third exemplary embodiment of the present invention, FIG. 12 is an enlarged cross-sectional view taken along line II-XIII of FIG. 11, and FIG. 13 is a first and second silicon light of FIG. 11. An enlarged plan view of a portion of the elements 50a and 50b.

11 to 13, the composite device 50 according to the third embodiment of the present invention includes first and second silicon optical devices 50a and 50b. In addition, the composite device 50 according to the third embodiment of the present invention includes at least one semiconductor electronic device 5 formed integrally with the first and second silicon optical devices 50a and 50b on the substrate 11. It may further include. Here, the same reference numerals as in the foregoing embodiments denote members having similar or identical functions in terms of their function, material configuration and structure. The first and second silicon optical devices 50a and 50b have a material configuration substantially the same as that of the silicon optical device 10 described with reference to FIG. 2.

As illustrated in FIGS. 11 to 13, the members constituting the composite device 50 according to the third embodiment of the present invention are integrally formed on the single substrate 11 through a series of semiconductor manufacturing processes. Can be.

In the present embodiment, the first silicon optical device 50a and the second silicon optical device 50b are used as light emitting devices and light receiving devices, respectively, and the second silicon optical device 50b is the first silicon optical device 50a. It is formed to surround at least a part of the).

11 to 13 show an example in which the second silicon optical device 50b is formed in a ring-shaped structure surrounding the first silicon optical device 50a. In this case, the first and second electrodes 57a / 57b and 59a / 59b are patterned to correspond to the shapes of the first and second silicon optical devices 50a and 50b. That is, the annular first electrode 57b for the second silicon optical device 50b is formed to surround the annular first electrode 57a for the first silicon optical device 50a. In addition, the annular second electrode 59b for the second silicon optical device 50b is formed to have a structure surrounding the second electrode 59a for the first silicon optical device 50a.

Preferably, electrical barriers are formed between the first and second silicon optical devices 50a and 50b and between the second silicon optical device 50b and its periphery so as to be electrically independent of each other. This electrical partition can be realized by etching the substrate 11 to a predetermined depth to form a trench 56, as in the previous embodiment.

Here, at least one of the first and second silicon optical devices 50a and 50b is formed in a mesa structure in which a portion in which the doped region is formed is protruded, and the second electrodes 59a / 59b for the silicon optical device are formed. It may also be patterned in steps around the mesa structure.

As described above, the second silicon optical device 50b used as the light receiving device surrounds at least a part of the first silicon optical device 50a used as the light emitting device. 50 may be used as an optical signal transceiver in a bidirectional optical transmission module.

At this time, by using the composite device 50 according to the third embodiment of the present invention, bidirectional optical communication through the same path is possible.

14 is a configuration diagram schematically showing an optical transmission module according to a third embodiment of the present invention.

Referring to FIG. 14, the optical transmission module according to the third embodiment of the present invention includes first and second transceivers 61 and 65 for outputting and receiving optical signals. In addition, an optical waveguide 63 for transmitting an optical signal between the first and second transmitters 61 and 65 may be further provided.

The first and second transmitters 61 and 65 may include a composite device 50 according to the third embodiment of the present invention described with reference to FIGS. 11 to 13, respectively.

The optical transmission module according to the third embodiment of the present invention as shown in FIG. 14 is applied to two-way optical communication through the same path. When the optical transmission module is provided in an array, each optical signal transmission and reception are identical. It is possible to perform a bidirectional optical communication of a plurality of channels made through.

The present invention is not limited to the composite device described above with reference to the drawings and the optical transmission module employing the same. That is, the composite device and the optical transmission module employing the same according to the present invention may be variously modified within the scope of the technical idea of the present invention.

According to the composite device according to the present invention as described above, two or more semiconductor devices of the light emitting device, the light receiving device and the semiconductor electronic device can be integrally formed on a low-cost silicon substrate through a series of semiconductor manufacturing process, Not only is this simple and inexpensive manufacturing, it also eliminates the need for a separate base, such as a PCB, enabling a single chip at low cost.

In addition, if the composite device according to the present invention is applied to a transmitter, a receiver, or a transceiver, a low cost optical transmission module can be realized.

Claims (5)

at least one optical device and at least one electronic device formed on a substrate based on n-type or p-type silicon, The optical device, A doped region doped on one surface of the substrate to exhibit a photoelectric conversion effect by a quantum confinement effect in a form opposite to the substrate by a predetermined dopant; And a first electrode and a second electrode formed on the substrate. The method of claim 1, wherein the optical device, A first silicon optical element used as a light emitting element, A composite device comprising a second silicon optical device used as a light receiving device. The optical device of claim 1, wherein the optical device functions as a mask when the doped region is formed, and a control layer is formed such that the doped region is formed at a doping depth exhibiting a photoelectric conversion effect by a quantum confinement effect. Composite device characterized in that. The composite device of claim 2, wherein electrical barriers are formed between the first and second silicon optical devices to be electrically independent of each other. 3. The optical device of claim 1, wherein a portion including the doped region forms a mesa structure, the first electrode is formed on one surface of the substrate on which the doped region is formed, and the second electrode is formed on the substrate. A composite device, characterized in that formed in the step portion around the mesa structure.