KR100439534B1 - Leveler for electroplating - Google Patents
Leveler for electroplating Download PDFInfo
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- KR100439534B1 KR100439534B1 KR10-2001-0016927A KR20010016927A KR100439534B1 KR 100439534 B1 KR100439534 B1 KR 100439534B1 KR 20010016927 A KR20010016927 A KR 20010016927A KR 100439534 B1 KR100439534 B1 KR 100439534B1
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
- C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
- C07C309/04—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing only one sulfo group
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/22—Electroplating: Baths therefor from solutions of zinc
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/30—Electroplating: Baths therefor from solutions of tin
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/46—Electroplating: Baths therefor from solutions of silver
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/48—Electroplating: Baths therefor from solutions of gold
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- Electroplating And Plating Baths Therefor (AREA)
Abstract
본 발명은 미세 패턴 또는 미세홀 도금용 전기도금 조성물에 관한 것으로, 본 발명에 따른 도금 조성물은 최소한 하나 이상의 불소 치환기를 가진 알칸, 사이클로알칸 또는 페놀 설폰산 또는 그의 유도체를 레벨링제(leveler)로 포함하는 것을 특징으로 하며, 미세 패턴이나 미세홀에 균일성이 우수한 도금막을 제공할 수 있다.The present invention relates to an electroplating composition for fine pattern or microhole plating, the plating composition according to the present invention comprises an alkane, cycloalkane or phenol sulfonic acid or derivative thereof having at least one or more fluorine substituents as a leveler (leveler) It is characterized in that, it is possible to provide a plating film excellent in uniformity in the fine pattern and the fine holes.
Description
본 발명은 미세패턴 또는 미세홀을 도금하기 위한 전기도금 조성물에 관한 것으로서, 특히 불소 치환기를 가진 특정의 설폰산 또는 그의 유도체를 첨가제로서 포함하여 도금막의 균일성을 현저히 개선시킨 도금 조성물에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electroplating composition for plating micropatterns or microholes, and more particularly to a plating composition in which a specific sulfonic acid having a fluorine substituent or a derivative thereof is added as an additive to significantly improve the uniformity of the plating film.
미세패턴 및 미세홀을 도금하는 공정은 반도체와 인쇄회로전자기판(PCB) 산업에 있어서 핵심 공정이다. 예를 들어, 반도체의 경우 구리를 금속 배선으로 쓰기 위한 시도가 많이 이루어지고 있는데, 이 기술에서의 핵심은 미세홀 및 미세패턴에서의 균일한 도금이다. 또한, PCB 산업에서도 고집적화, 미세 패턴화가 이루어지면서 미세홀 및 미세 패턴의 균일한 도금이 시급히 해결해야 할 문제로 점점 대두되고 있다.The process of plating fine patterns and holes is a key process in the semiconductor and printed circuit board (PCB) industries. For example, in the case of semiconductors, many attempts have been made to use copper as metal wiring, and the core of this technology is uniform plating in fine holes and fine patterns. In addition, in the PCB industry, as the integration and fine patterning are made, the uniform plating of the fine holes and the fine patterns is emerging as a problem to be urgently solved.
전기도금 조성물용 첨가제는 크게 광택제(brightener), 레벨링제(leveler) 및 이온전달체(carrier)로 나눌 수 있다. 레벨링제는 도금막 표면의 미세한 거칠기를 감소시켜 도금 공정 중 도금막이 균일하게 형성되도록 도와주는 역할을 하는 첨가제로서, 예로는 알칸계 계면활성제를 포함하는 황산 등이 있다. 광택제는 기본적으로는 레벨링제와 유사하나 미세 거칠기를 좀 더 감소시켜 도금 표면이 광택이 나도록 하는 역할을 하며, 이의 예로는 표면활성기(surface active group)를 가진 프로판 황산 등이 있다. 또한, 캐리어는 도금액의 표면 장력을 감소시켜 미세패턴 및 미세홀의 도금을 원활하게 해주는 역할을 하며, 예로는 폴리알킬렌 글리콜 계열의 폴리머 등이 있다.Additives for electroplating compositions can be broadly divided into brighteners, levelers, and ion carriers. The leveling agent is an additive that serves to reduce the fine roughness of the surface of the plated film to help form the plated film uniformly during the plating process, for example, sulfuric acid including an alkane-based surfactant. The polisher is basically similar to the leveling agent, but serves to reduce the fine roughness to further polish the plating surface, for example, propane sulfuric acid having a surface active group. In addition, the carrier serves to reduce the surface tension of the plating liquid to facilitate the plating of the micropattern and the microholes, for example, a polyalkylene glycol-based polymer.
기존의 개발된 술폰산계 첨가제를 사용하는 경우 도금막의 균일성이 부족하여 균일성과 생산성을 동시에 만족시키는 도금 조성물의 개발이 여전히 필요한 실정이다. 또한, 도금성 향상을 위해 전기적 및 기계적 도금 장비의 개선도 이루어지고 있으나, 이 또한 초기 투자비 상승 및 생산성 면에서 그 실효를 거두고 있지 못하고 있다.In the case of using the conventionally developed sulfonic acid-based additive, there is still a need to develop a plating composition that satisfies uniformity and productivity simultaneously due to the lack of uniformity of the plating film. In addition, improvements in electrical and mechanical plating equipment have been made to improve the plating property, but this also has not been effective in terms of initial investment cost and productivity.
따라서, 본 발명은, 미세홀 및 미세패턴 도금에 있어서, 높은 생산성을 유지하면서도 균일한 도금 막을 형성하도록 하는 효과를 가진 첨가제를 개발하는데 그 목적을 두고 있다.Accordingly, the present invention aims to develop an additive having an effect of forming a uniform plating film while maintaining high productivity in microhole and micropattern plating.
도 1은 종래 기술에 따른 구리 전기도금 조성물을 사용하여 미세홀을 도금한 경우의 도금막의 단면을 보여주는 사진이고,1 is a photograph showing a cross section of a plating film in the case of plating a fine hole using a copper electroplating composition according to the prior art,
도 2는 본 발명에 따라 특정의 레벨링제를 포함하는 구리 전기도금 조성물을 사용하여 미세홀을 도금한 경우의 도금막의 단면을 보여주는 사진이다.FIG. 2 is a photograph showing a cross section of a plating film in the case where the micro holes are plated using the copper electroplating composition including a specific leveling agent according to the present invention.
상기 목적에 따라 본 발명에서는, 하나 이상의 불소 치환기를 함유하는 설폰산계 화합물을 포함하는, 전기도금용 레벨링제(leveler)를 제공한다.In accordance with the above object, the present invention provides a leveler for electroplating comprising a sulfonic acid compound containing at least one fluorine substituent.
이하, 본 발명을 보다 상세히 설명한다.Hereinafter, the present invention will be described in more detail.
본 발명의 전기도금 조성물은 반도체 또는 PCB 분야에서 사용되는 모든 금속 (예를 들면, 구리, 주석, 니켈, 아연, 금, 은, 코발트 등)의 도금에 적용될 수 있으며, 도금 조성물에 사용되는 금속 공급원은 해당 금속의 공급원으로 통상 사용되는 모든 수용성 금속원일 수 있다.The electroplating composition of the present invention can be applied to the plating of all metals (eg, copper, tin, nickel, zinc, gold, silver, cobalt, etc.) used in the semiconductor or PCB field, the metal source used in the plating composition May be any water soluble metal source commonly used as the source of the metal in question.
본 발명에서 특징적으로 첨가제로 사용하는 설폰산 유도체는 불소 라디칼을 갖는 것을 특징으로 하며, 하기 화학식 1의 불소 치환된 알칸 설폰산 또는 그의 유도체, 화학식 2의 불소 치환된 사이클로알칸 설폰산 또는 그의 유도체 또는 화학식 3의 불소 치환된 페놀 설폰산 또는 그의 유도체로 나타내어질 수 있다:The sulfonic acid derivative used as an additive in the present invention is characterized in that it has a fluorine radical, a fluorine substituted alkane sulfonic acid or a derivative thereof of the formula (1), a fluorine substituted cycloalkane sulfonic acid or a derivative thereof of the formula (2) or It may be represented by a fluorine substituted phenol sulfonic acid or a derivative thereof of formula 3:
상기 식에서,Where
R1내지 R7은 각각 독립적으로, 불소(F), 수소(H), p가 1 내지 4인 CpH2p+1또는CpF2p+1이고, 이때 R1내지 R5중 최소한 하나 및 R6및 R7중 최소한 하나는 불소(F)이며,R 1 to R 7 are each independently fluorine (F), hydrogen (H), C p H 2p + 1 or C p F 2p + 1 wherein p is 1 to 4, wherein at least one of R 1 to R 5 And at least one of R 6 and R 7 is fluorine (F),
A는 알칼리금속, 알칼리토 금속, 수소, -NB1B2B3B4(여기서, B1내지 B4는 각각 독립적으로 수소 또는 알킬, 아릴 또는 아르알킬이다)이고,A is an alkali metal, alkaline earth metal, hydrogen, —NB 1 B 2 B 3 B 4 , wherein B 1 to B 4 are each independently hydrogen or alkyl, aryl or aralkyl,
n은 0 내지 18 범위의 수이다.n is a number ranging from 0 to 18.
상기 화학식에서, R1내지 R5모두가 불소이고, R6및 R7둘다가 불소이며, A가 알칼리금속인 것이 바람직하다.In the above formula, it is preferable that both R 1 to R 5 are fluorine, both R 6 and R 7 are fluorine, and A is an alkali metal.
본 발명에 따른 상기 첨가제의 사용 농도는 도금 조성물 중의 1 내지 3,000 mg/L 범위일 수 있다.The use concentration of the additive according to the present invention may range from 1 to 3,000 mg / L in the plating composition.
본 발명의 도금 조성물은 추가로 도금 조성물에 통상 사용되는 기타 첨가제를 본 발명의 효과를 저해하지 않는 범위 내의 양으로 포함할 수 있다.The plating composition of the present invention may further contain other additives commonly used in the plating composition in an amount within a range that does not impair the effects of the present invention.
본 발명의 도금 조성물에 도금할 기판을 침지하여 음극으로 하고 양극으로 도금 금속을 사용하여 상온에서 적절한 정도의 전류를 적절한 시간동안 인가함으로써 기판 상에 원하는 금속의 도금막을 전기도금할 수 있다.The plated film of the desired metal may be electroplated on the substrate by immersing the substrate to be plated in the plating composition of the present invention as a cathode and applying an appropriate current at room temperature for an appropriate time using a plating metal as the anode.
본 발명의 도금 조성물을 사용하면 미세홀 또는 미세 패턴에서도 균일성이 우수한 도금막을 수득할 수 있다.By using the plating composition of the present invention, it is possible to obtain a plated film having excellent uniformity even in fine holes or fine patterns.
이하, 본 발명을 실시예로써 기술하며, 이 실시예가 본 발명을 한정하는 것은 아니다.The present invention is described below by way of examples, which do not limit the invention.
실시예Example
광택성 에폭시 수지 기판 위에 전면적으로 구리 박막이 20 μm의 두께로 형성되어 있는 PCB 용의 일반 기판 위에, 약 150 μm 의 홀을 약 60-70 μm 깊이로 형성시키고, 전기도금을 할 수 있도록 화학동 및 유기동을 입힌 전기도금용 PCB 기판 (10 cm x 1 cm)을 준비하였다.On a general substrate for PCB, where a thin copper film is formed to a thickness of 20 μm on the entire surface of a glossy epoxy resin substrate, about 150 μm holes are formed to a depth of about 60 to 70 μm, and chemical copper can be used for electroplating. And an organic copper plated PCB substrate (10 cm × 1 cm) was prepared.
하기 표 1에 나타낸 바와 같은 조성을 가진 수성 도금 조성물들을 준비하여, 이 도금 조성물 300 mL에 상기 PCB 기판을 음극으로, 도금용 구리판 (P 함량 3 내지 5 중량%)을 양극으로 연결하여 온도 25 ℃, 전류 20 mA/cm2의 조건에서 60분간 도금을 수행하였다.To prepare a water-based plating compositions having a composition as shown in Table 1, to the 300 mL of the plating composition to connect the PCB substrate as a cathode, the plating copper plate (P content 3 to 5% by weight) as an anode temperature 25 ℃, The plating was performed for 60 minutes under the condition of 20 mA / cm 2 current.
수득된 도금막의 도금 균일성을 비교하기 위해, 실시예 1 및 비교예 1의 조성물로부터 얻어진 도금막에서 기판의 미세홀 부분의 단면을 관찰하였으며, 그 결과를 각각 도 1 및 도 2에 나타내었다.In order to compare the plating uniformity of the obtained plating film, the cross section of the microhole part of the board | substrate was observed in the plating film obtained from the composition of Example 1 and the comparative example 1, and the result is shown to FIG. 1 and FIG. 2, respectively.
도 1과 도 2를 비교함으로써 본 발명에 따른 첨가제 사용시 미세홀 내부가 보다 균일하게 도금됨을 확인할 수 있다.By comparing FIG. 1 and FIG. 2, it can be seen that the inside of the microholes is more uniformly plated when using the additive according to the present invention.
본 발명에 따라 불소 치환기 함유 특정 설폰산 또는 그의 유도체를 첨가제로 포함하는 금속 전기도금 조성물은 미세홀 및 미세패턴을 보다 균일하게 도금할 수 있다.According to the present invention, a metal electroplating composition comprising a fluorine substituent-containing specific sulfonic acid or a derivative thereof as an additive may plate the micro holes and the micro patterns more uniformly.
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Cited By (2)
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KR20240078353A (en) | 2022-11-22 | 2024-06-03 | 와이엠티 주식회사 | Electroplating method for filling via holes |
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KR100430949B1 (en) * | 2001-10-22 | 2004-05-12 | 엘지.필립스 엘시디 주식회사 | Electroless silver plating solution and method of forming metal interconnects using the same |
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KR20000077270A (en) * | 1999-05-17 | 2000-12-26 | 마티네즈 길러모 | Electrolytic copper plating solutions |
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JPH04358091A (en) * | 1990-01-29 | 1992-12-11 | Shipley Co Inc | Composition of electric plating solution |
WO2000045625A2 (en) * | 1999-01-27 | 2000-08-03 | Bayer Aktiengesellschaft | Method for the direct electroplating of through-holes in printed circuit boards |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4299796A2 (en) | 2022-06-28 | 2024-01-03 | YMT Co., Ltd. | Leveler and electroplating composition for filling via hole |
KR20240001925A (en) | 2022-06-28 | 2024-01-04 | 와이엠티 주식회사 | Levelling agent and electroplating composition for filling via hole |
KR20240078353A (en) | 2022-11-22 | 2024-06-03 | 와이엠티 주식회사 | Electroplating method for filling via holes |
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KR20020076796A (en) | 2002-10-11 |
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