CN113430597B - Application of hole-filling electroplating leveling agent for circuit board - Google Patents

Application of hole-filling electroplating leveling agent for circuit board Download PDF

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CN113430597B
CN113430597B CN202110984936.2A CN202110984936A CN113430597B CN 113430597 B CN113430597 B CN 113430597B CN 202110984936 A CN202110984936 A CN 202110984936A CN 113430597 B CN113430597 B CN 113430597B
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CN113430597A (en
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宗高亮
谢慈育
李得志
冉光武
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Shenzhen Boardtech Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
    • H05K3/424—Plated through-holes or plated via connections characterised by electroplating method by direct electroplating

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Abstract

The invention provides an application of a leveling agent for hole-filling electroplating of a circuit board, and relates to the technical field of hole-filling electroplating. The circuit board hole-filling electroplating leveling agent is thiourea-based imidazoline quaternary ammonium salt, namely thiourea is introduced into leveling agent molecules and is added into an electroplating solution system to perform hole-filling electroplating, and the surface copper thickness is small and is less than 15 micrometers; the hole filling performance is excellent, and the method can adapt to the more and more delicate development of the processing of fine circuits. The electroplating solution used in electroplating is composed of 40-120g/L sulfuric acid, 120-240g/L copper sulfate pentahydrate, 40-80ppm chloride ions, 2-10ppm accelerator, 600-1000ppm inhibitor and 3-10ppm of the thiourea-based imidazoline quaternary ammonium salt, and the holes filled by electroplating are one or more of blind holes, through holes and buried holes.

Description

Application of hole-filling electroplating leveling agent for circuit board
Technical Field
The invention relates to the technical field of hole filling electroplating, in particular to an application of a hole filling electroplating leveling agent for a circuit board.
Background
In recent years, the electronic industry technology is rapidly developed, the electronic products are smaller and smaller, and the functions are more and more concentrated. Many electronic products need to have both strong functions and good portability, and the circuit board used as the mother circuit board of the electronic product must increase the circuit density as much as possible according to the needs to save the limited space, so the circuit board is inevitably refined and thinned.
The complete circuit of the circuit board is formed by communicating plane wiring and interlayer holes, and the combination of the micro via hole and the fine circuit technology is the premise for realizing the high density of the printed circuit board.
Tiny vias (including through holes, blind holes, buried holes) are used to realize electrical interconnection between layers of the board. When the pore diameter is reduced, copper plating is generally used for filling pores in order to secure the electrical performance of the interlayer wiring. The existing hole-filling copper plating is sulfate copper plating, which is realized by mainly using sulfuric acid, copper sulfate and chloride ions as basic plating solution and adding a plurality of additives of an accelerator, an inhibitor and a leveling agent. The accelerator is usually a small-molecule sulfur-containing compound, and has the function of accelerating the reduction of copper ions in the blind holes and simultaneously forming new copper plating crystal nuclei so as to enable the copper layer structure to be more detailed, wherein SPS (sodium polydithio dipropyl sulfonate) and MPS (3-sodium thiopropane sulfonate) and the like are mainly used; the inhibitor (also called a carrier) is a polyether compound, which is easy to be adsorbed on active points of crystal grain growth, can increase electrochemical reaction resistance and enhance electrochemical polarization, thereby achieving the effects of refining crystal grains and inhibiting plate surface coating growth, and commonly used are polyethylene glycol, aromatic polyoxyethylene ether, nonyl phenol and ethylene oxide reactants and the like; the leveling agent is generally a nitrogen-containing heterocyclic compound which is easily adsorbed in a raised area of the plate surface, namely a high current density area, so that the electroplating speed at the position is slowed down, the deposition of copper in the high current density area is inhibited, and the adsorption in a sunken position of the plate surface and a micro blind hole is less, so that the copper deposition at the position is not influenced, and the effect of leveling the plate surface is achieved. The three additives play different roles in electroplating and are matched with each other, and the micro blind hole can be well filled only when the additives reach a proper proportion.
The fine circuit is generally manufactured by adopting a semi-additive process, wherein hole metallization, through hole electroplating and hole filling electroplating are firstly carried out on a copper substrate, then film pressing and pattern electroplating are carried out, and after the film is stripped, bottom copper is etched in a differential etching mode to form the fine circuit. In the etching process, the etching rates in all directions are different, so that the upper bottom width and the lower bottom width of the circuit inevitably have certain difference, and the phenomenon is lateral erosion. The less obvious the side etching phenomenon, the closer the cross section of the line is to a rectangle, the more serious the side etching phenomenon is, the worse the line quality is, and the like a trapezoid. In addition to the etching equipment and the chemical itself, which affect the etching of the lines, the thickness and uniformity of the plating is also very important. As the circuit becomes finer, the thickness of the etched copper layer becomes more and more important to the line width and line spacing and line type of the circuit.
With the circuit of the circuit board becoming finer, the line width and the line distance of the planar wiring are much smaller than 75 micrometers, and some line distances even reach 40/50 micrometers, under such a condition, the thickness of the surface copper is required to be thinner to achieve the purpose of reducing the difficulty of circuit etching, and the thickness of the surface copper after the blind holes are filled with the existing electroplating additive for blind hole filling is generally 16-20 micrometers, sometimes even more than 20 micrometers, and the requirements of the finer circuit process can not be met.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: when the hole filling electroplating is carried out, the small thickness of the surface copper is ensured, the hole filling performance is excellent, and the influence of the excessive thickness of the surface copper on the processing of a fine circuit is avoided.
In order to solve the technical problems, the invention adopts the technical scheme that:
the application of a leveling agent for hole-filling electroplating of a circuit board, wherein the leveling agent is thiourea-based imidazoline quaternary ammonium salt; the structural formula of the thiourea imidazoline quaternary ammonium salt is shown in the specification
Figure 106014DEST_PATH_IMAGE001
Wherein R is
Figure 554313DEST_PATH_IMAGE002
Y is
Figure 989843DEST_PATH_IMAGE003
The value range of a is an integer from 4 to 9; the leveling agent is applied to hole filling electroplating, and holes filled by electroplating are one or more of blind holes, through holes and buried holes; the electroplating solution used in electroplating is composed of 40-120g/L sulfuric acid, 120-240g/L copper sulfate pentahydrate, 40-80ppm chloride ion, 2-10ppm accelerator, 600-1000ppm inhibitor and 3-10ppm of the thiourea-based imidazoline quaternary ammonium salt.
Further, the accelerator is composed of
Figure 916210DEST_PATH_IMAGE004
And/or
Figure 137107DEST_PATH_IMAGE005
Consisting of
Figure 490728DEST_PATH_IMAGE006
And/or
Figure 413554DEST_PATH_IMAGE007
And/or
Figure 143612DEST_PATH_IMAGE008
The composition comprises b, c and g, wherein the range of b is a natural number from 1 to 5, c is 0 or 1, d is a natural number from 1 to 5, e is 0 or 1, f is a natural number from 10 to 500, g is a natural number from 10 to 100, h is a natural number from 10 to 100, k is a natural number from 10 to 100, n is a natural number from 10 to 100, M is a natural number from 10 to 100, l is a natural number from 10 to 100, and M is metal ions.
Further, the current density is 1.0-3.0A/dm during electroplating2The adaptive electroplating temperature is 10-40 ℃.
The thiourea imidazoline quaternary ammonium salt is prepared by mixing alkenyl benzyl amine ethyl imidazoline quaternary ammonium chloride salt and thiourea according to a molar ratio of 1: 1-1.05, the reaction temperature is 100-120 ℃, and the reaction time is 120-240 min. The alkenyl benzylaminoethylimidazoline quaternary ammonium chloride is prepared by mixing alkenylaminoethylimidazoline and benzyl chloride according to a molar ratio of 1: 1-1.05, the reaction temperature is 80-100 ℃, and the reaction time is 120-240 min. The alkenyl amine ethyl imidazoline is prepared by mixing organic acid and diethylenetriamine according to a molar ratio of 1: 1-1.05, the reaction temperature is 150-. The organic acid has carbon number of 4-10, and xylene is added as solvent during reaction.
The invention has the beneficial effects that: when the thiourea-based imidazoline quaternary ammonium salt is used as a leveling agent and added into an electroplating solution system for hole filling electroplating, the thickness of surface copper is less than 15 micrometers; the hole filling performance is excellent, and the method can adapt to the more and more delicate development of the processing of fine circuits.
Drawings
The detailed structure of the invention is described in detail below with reference to the accompanying drawings
FIG. 1 is a graph showing the hole-filling effect of test example 1 when the hole-filling electroplating leveler for a circuit board according to the present invention is applied;
FIG. 2 is a graph showing the hole-filling effect of test example 2 when the hole-filling electroplating leveler for a circuit board according to the present invention is applied;
FIG. 3 is a graph showing the hole-filling effect of test example 3 when the hole-filling electroplating leveler for a circuit board according to the present invention is applied;
FIG. 4 is a graph showing the hole-filling effect of test example 4 when the hole-filling electroplating leveler for a circuit board according to the present invention is applied;
FIG. 5 is a graph showing the hole-filling effect of test example 5 when the hole-filling electroplating leveler for a circuit board according to the present invention is applied;
FIG. 6 is a graph showing the effect of pore-filling in comparative example 1 of the present invention;
FIG. 7 is a graph showing the effect of pore-filling in comparative example 2 of the present invention;
FIG. 8 is a graph showing the effect of pore-filling in comparative example 3 of the present invention;
FIG. 9 is a graph showing the effect of pore-filling in comparative example 4 of the present invention;
fig. 10 is a graph showing the effect of pore filling in comparative example 5 of the present invention.
Detailed Description
The most key concept of the invention is as follows: the thiourea group is introduced into the leveling agent molecules, so that the purpose of effectively reducing the thickness of surface copper is achieved.
In order to further explain the feasibility of the inventive concept, the detailed description of the embodiments according to the technical content, the constructional features, the objectives and the effects achieved will be described in detail with reference to the accompanying drawings.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1:
adding 40mL of xylene into one 250mL double-neck round-bottom flask, sequentially dissolving 10.2 g (0.1mol) of valeric acid and 10.32g (0.1mol) of diethylenetriamine into the reaction system at room temperature, and stirring for 10min at room temperature; then raising the reaction temperature to 150 ℃, reacting for 5 hours, then raising the temperature to 200 ℃ and carrying out cyclization reaction for 2 hours to obtain the alkenyl amine ethyl imidazoline; cooling to 90 ℃, slowly dripping 12.66g (0.1mol) of benzyl chloride into the alkenyl amine ethyl imidazoline, and reacting for 3 hours under the condition of heat preservation to obtain alkenyl benzyl amine ethyl imidazoline quaternary ammonium chloride salt; slowly dripping 7.61g (0.1mol) of thiourea into the alkenyl benzylaminoethylimidazoline quaternary ammonium chloride salt to react for 2h at 110 ℃, and drying in vacuum to obtain an earthy yellow solid, namely the thiourea imidazoline quaternary ammonium salt. The product does not need further purification, can be directly dissolved in water and then used as a leveling agent, and is numbered 1 #.
Example 2:
adding 40mL of dimethylbenzene into one 250mL double-neck round-bottom flask, sequentially dissolving 17.2 g (0.1mol) of capric acid and 10.32g (0.1mol) of diethylenetriamine into the reaction system at room temperature, and stirring for 10min at room temperature; then raising the reaction temperature to 160 ℃, reacting for 4 hours, then raising the temperature to 200 ℃ and carrying out cyclization reaction for 2 hours to obtain the alkenyl amine ethyl imidazoline; cooling to 90 ℃, slowly dripping 12.66g (0.1mol) of benzyl chloride into the alkenyl amine ethyl imidazoline, and reacting for 3 hours under the condition of heat preservation to obtain alkenyl benzyl amine ethyl imidazoline quaternary ammonium chloride salt; slowly dripping 7.61g (0.1mol) of thiourea into the alkenyl benzylaminoethylimidazoline quaternary ammonium chloride salt to react for 2h at 110 ℃, and drying in vacuum to obtain an earthy yellow solid, namely the thiourea-based imidazoline quaternary ammonium salt, wherein the product does not need to be further purified and can be directly dissolved in water to be used as a leveling agent, and the number is No. 2.
To further illustrate the feasibility of using the thiourea-imidazoline quaternary ammonium salts as a plating via leveler in the present application, the following test examples were used:
test example 1
Preparing an electrolytic copper plating solution according to the following components: sulfuric acid: 60g/L, 200g/L of copper sulfate pentahydrate, 60ppm of chloride ions, 2ppm of an accelerator, 600ppm of an inhibitor and 5ppm of a leveling agent. Wherein the accelerator is
Figure 219016DEST_PATH_IMAGE009
The inhibitor is
Figure 743538DEST_PATH_IMAGE006
D is 3, e is 1, f is 100, M is sodium ion, leveling agent is 1 #.
During electroplating, the electroplating conditions are as follows: the temperature is 25 ℃, and the current density is 1.5A/dm2The plating time was 45 min.
Test example 2
Preparing an electrolytic copper plating solution according to the following components: 60g/L of sulfuric acid, 200g/L of copper sulfate pentahydrate, 60ppm of chloride ions, 10ppm of an accelerator, 1000ppm of an inhibitor and 10ppm of a leveling agent. Wherein the acceleration is
The agent is
Figure 153660DEST_PATH_IMAGE010
The inhibitor is
Figure 421830DEST_PATH_IMAGE006
D is 3, e is 1, f is 100, M is sodium ion, leveling agent is # 2.
During electroplating, the electroplating conditions are as follows: the temperature is 25 ℃, and the current density is 1.5A/dm2The plating time was 45 min.
Test example 3
Preparing an electrolytic copper plating solution according to the following components: 60g/L of sulfuric acid, 200g/L of copper sulfate pentahydrate, 60ppm of chloride ions, 5ppm of an accelerator, 600ppm of an inhibitor and 3ppm of a leveling agent. Wherein the accelerator is
Figure 351740DEST_PATH_IMAGE011
The inhibitor is
Figure 312743DEST_PATH_IMAGE007
B is 3, c is 1, g is 20, h is 30, k is 20, M is sodium ion, leveling agent is # 1.
During electroplating, the electroplating conditions are as follows: the temperature is 25 ℃, and the current density is 1.5A/dm2The plating time was 45 min.
Test example 4
Preparing an electrolytic copper plating solution according to the following components: 40g/L of sulfuric acid, 240g/L of copper sulfate pentahydrate, 80ppm of chloride ions, 5ppm of an accelerator, 600ppm of an inhibitor and 3ppm of a leveling agent. Wherein the accelerator is
Figure 944581DEST_PATH_IMAGE012
The inhibitor is
Figure 750863DEST_PATH_IMAGE008
D is 3, e is 0, n is 20, M is 20, l is 10, M is sodium ion, leveling agent is # 2.
Test example 5
Preparing an electrolytic copper plating solution according to the following components: 120g/L of sulfuric acid, 120g/L of copper sulfate pentahydrate, 40ppm of chloride ions, 5ppm of an accelerator, 600ppm of an inhibitor and 5ppm of a leveling agent. Wherein the accelerator is
Figure 800859DEST_PATH_IMAGE013
The inhibitor is
Figure 667184DEST_PATH_IMAGE007
B is 3, c is 0, g is 20, h is 30, k is 20, M is sodium ion, leveling agent is # 1.
During electroplating, the electroplating conditions are as follows: the temperature is 25 ℃, and the current density is 1.5A/dm2The plating time was 45 min.
Comparative example 1
Preparing an electrolytic copper plating solution according to the following components: sulfuric acid: 60g/L, 200g/L of copper sulfate pentahydrate, 60ppm of chloride ions, 2ppm of an accelerator, 600ppm of an inhibitor and 5ppm of a leveling agent. Wherein the accelerator is
Figure 51897DEST_PATH_IMAGE014
The inhibitor is
Figure 661870DEST_PATH_IMAGE006
D is 3, e is 1, f is 100, M is sodium ion, and the leveling agent is Kennelv.
During electroplating, the electroplating conditions are as follows: the temperature is 25 ℃, and the current density is 1.5A/dm2Electric powerThe plating time was 45 min.
Comparative example 2
Preparing an electrolytic copper plating solution according to the following components: 60g/L of sulfuric acid, 200g/L of copper sulfate pentahydrate, 60ppm of chloride ions, 10ppm of an accelerator, 1000ppm of an inhibitor and 10ppm of a leveling agent. Wherein the acceleration is
The agent is
Figure 566372DEST_PATH_IMAGE015
The inhibitor is
Figure 869178DEST_PATH_IMAGE006
D is 3, e is 0, f is 100, M is sodium ion, leveling agent is # 2.
During electroplating, the electroplating conditions are as follows: the electroplating temperature is 45 ℃ and the current density is 1.5A/dm2The plating time was 45 min.
Comparative example 3
Preparing an electrolytic copper plating solution according to the following components: 40g/L of sulfuric acid, 240g/L of copper sulfate pentahydrate, 80ppm of chloride ions, 5ppm of an accelerator, 600ppm of an inhibitor and 3ppm of a leveling agent. Wherein the accelerator is
Figure 475608DEST_PATH_IMAGE016
The inhibitor is
Figure 889272DEST_PATH_IMAGE008
D is 3, e is 0, n is 20, M is 20, l is 10, M is sodium ion, leveling agent is # 2.
During electroplating, the electroplating conditions are as follows: the temperature is 25 ℃, and the current density is 3.5A/dm2The plating time was 25 min.
Comparative example 4
Preparing an electrolytic copper plating solution according to the following components: sulfuric acid: 60g/L, 200g/L of copper sulfate pentahydrate, 60ppm of chloride ions, 0.4ppm of accelerator, 600ppm of inhibitor and 5ppm of leveling agent. Wherein the accelerator is
Figure 913860DEST_PATH_IMAGE017
The inhibitor is
Figure 387567DEST_PATH_IMAGE006
D is 3, e is 1, f is 100, M is sodium ion, leveling agent is 1 #.
During electroplating, the electroplating conditions are as follows: the temperature is 25 ℃, and the current density is 1.5A/dm2The plating time was 45 min.
Comparative example 5
Preparing an electrolytic copper plating solution according to the following components: 60g/L of sulfuric acid, 200g/L of copper sulfate pentahydrate, 60ppm of chloride ions, 10ppm of an accelerator, 80ppm of an inhibitor and 10ppm of a leveling agent. Wherein the accelerator is
Figure 153397DEST_PATH_IMAGE018
The inhibitor is
Figure 105173DEST_PATH_IMAGE006
D is 3, e is 1, f is 100, M is sodium ion, leveling agent is # 2.
During electroplating, the electroplating conditions are as follows: the temperature is 25 ℃, and the current density is 1.5A/dm2The plating time was 45 min.
The electrolytic copper plating solutions prepared in the test examples 1 to 5 and the comparative examples 1 to 5 were respectively added into 1500mL of a Harlin bath, clean phosphor-copper plates with a phosphor content of 0.04 to 0.065% were placed at both ends of the Harlin bath as anodes, and stirred by pumping up gas in the middle of the bath at an air stirring speed of 2 to 3L/min. A plurality of blind hole plates (the specification is 50mm multiplied by 100mm, the diameter of a blind hole is 100 mu m, the hole depth is 75 mu m) to be filled are pretreated by oil removal, microetching, activation in dilute sulfuric acid solution and the like, and then the blind hole plates are respectively put into the liquid of the Harlin groove for electroplating (vertically put in the middle position).
And respectively sectioning the electroplated samples, respectively observing the sections of the sectioned samples by using a metallographic microscope, and evaluating the filling effect of the blind holes and the thickness of the surface copper, wherein the results are detailed in table 1 and figures 1 to 10.
TABLE 1 electroplated blind via fill Effect and surface copper thickness results
Figure 233535DEST_PATH_IMAGE019
As can be seen from table 1, the present invention improves the interaction between the leveler molecules and the accelerator and suppressor by introducing thiourea groups into the leveler molecules, thereby achieving excellent pore-filling properties and making the surface copper thinner. By using the additive formula, blind holes with the diameter of 100 mu m and the depth of 75 mu m are filled, the thickness of ultra-thin surface copper below 15 mu m and the recess within 5 mu m can be obtained, and the filled blind holes have no poor quality such as plating cavities, cracks and the like.
In summary, the leveling agent for hole-filling electroplating of the circuit board, the preparation method and the application thereof provided by the invention have the advantages that when the thiourea-based imidazoline quaternary ammonium salt is used as the leveling agent and added into an electroplating solution system for hole-filling electroplating, the surface copper thickness is small and is less than 15 micrometers; the hole filling performance is excellent, and the method can adapt to the more and more delicate development of the processing of fine circuits.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes performed by the present specification and drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.

Claims (3)

1. The application of the hole-filling electroplating leveling agent for the circuit board is characterized in that the leveling agent is thiourea-based imidazoline quaternary ammonium salt; the structural formula of the thiourea imidazoline quaternary ammonium salt is shown in the specification
Figure 91384DEST_PATH_IMAGE001
Wherein R is
Figure 547773DEST_PATH_IMAGE002
Y is
Figure 427874DEST_PATH_IMAGE003
The value range of a is an integer from 4 to 9; the leveling agent is applied to hole filling electroplating, and holes filled by electroplating are blind holes, through holes,One or more of the buried holes; the electroplating solution used in electroplating is composed of 40-120g/L sulfuric acid, 120-240g/L copper sulfate pentahydrate, 40-80ppm chloride ion, 2-10ppm accelerator, 600-1000ppm inhibitor and 3-10ppm of the thiourea-based imidazoline quaternary ammonium salt.
2. The use of a circuit board via-filling plating leveler as recited in claim 1, wherein the accelerator is formed from
Figure 20529DEST_PATH_IMAGE004
And/or
Figure 711404DEST_PATH_IMAGE005
Consisting of
Figure 655090DEST_PATH_IMAGE006
And/or
Figure 338881DEST_PATH_IMAGE007
And/or
Figure 192567DEST_PATH_IMAGE008
The composition comprises b, c and g, wherein the range of b is a natural number from 1 to 5, c is 0 or 1, d is a natural number from 1 to 5, e is 0 or 1, f is a natural number from 10 to 500, g is a natural number from 10 to 100, h is a natural number from 10 to 100, k is a natural number from 10 to 100, n is a natural number from 10 to 100, M is a natural number from 10 to 100, l is a natural number from 10 to 100, and M is metal ions.
3. The use of a hole-filling plating leveler for a wiring board according to claim 2, where the current density during plating is 1.0 to 3.0A/dm2The adaptive electroplating temperature is 10-40 ℃.
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103060860A (en) * 2013-01-22 2013-04-24 中南大学 Electroplating solution for acid copper-plating for printed circuit board as well as preparation method and application method for same
CN104499021A (en) * 2014-12-29 2015-04-08 广东光华科技股份有限公司 Printed circuit board and electrocoppering process thereof
CN105018977A (en) * 2015-07-17 2015-11-04 深圳市板明科技有限公司 Porefilling electroplating leveling agent, preparation method and electroplating liquid using leveling agent
CN105561864A (en) * 2015-12-14 2016-05-11 陕西科技大学 Imidazoline amphoteric surfactant and preparation method thereof
CN111996563A (en) * 2020-07-07 2020-11-27 广东硕成科技有限公司 Hole metallization composition for vertical continuous pulse electroplating and electroplating method
CN112341393A (en) * 2020-11-10 2021-02-09 盘锦天诚源科技有限公司 Metal corrosion inhibitor and preparation method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103060860A (en) * 2013-01-22 2013-04-24 中南大学 Electroplating solution for acid copper-plating for printed circuit board as well as preparation method and application method for same
CN104499021A (en) * 2014-12-29 2015-04-08 广东光华科技股份有限公司 Printed circuit board and electrocoppering process thereof
CN105018977A (en) * 2015-07-17 2015-11-04 深圳市板明科技有限公司 Porefilling electroplating leveling agent, preparation method and electroplating liquid using leveling agent
CN105561864A (en) * 2015-12-14 2016-05-11 陕西科技大学 Imidazoline amphoteric surfactant and preparation method thereof
CN111996563A (en) * 2020-07-07 2020-11-27 广东硕成科技有限公司 Hole metallization composition for vertical continuous pulse electroplating and electroplating method
CN112341393A (en) * 2020-11-10 2021-02-09 盘锦天诚源科技有限公司 Metal corrosion inhibitor and preparation method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"硫脲基烷基咪唑啉类缓蚀剂的制备、缓蚀性能及其机理";张光华等;《材料保护》;20110228;第44卷(第2期);第21-23、58页 *

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