KR100430410B1 - Manufacturing method of Aluminum films by ion plating - Google Patents

Manufacturing method of Aluminum films by ion plating Download PDF

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KR100430410B1
KR100430410B1 KR10-2000-0049077A KR20000049077A KR100430410B1 KR 100430410 B1 KR100430410 B1 KR 100430410B1 KR 20000049077 A KR20000049077 A KR 20000049077A KR 100430410 B1 KR100430410 B1 KR 100430410B1
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barrel
specimen
voltage
vacuum chamber
electron beam
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KR10-2000-0049077A
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Korean (ko)
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KR20020016005A (en
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정재인
정우철
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재단법인 포항산업과학연구원
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/32Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/16Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/541Heating or cooling of the substrates

Abstract

개시된 알루미늄 피막의 제조 방법은, 피막처리가 수행되는 진공실; 상기 진공실의 상부에 고정되고 내부에 시편이 설치되는 배럴; 상기 배럴에 대향되는 진공실 하부에 마련되는 전자빔 증발원; 상기 배럴과 전자빔 증발원 사이에 설치되는 셔터; 상기 전자빔증발원의 일측에 설치되는 필라멘트와 이온화전극; 상기 셔터와 배럴 사이에 설치되는 시편 가열장치를 포함하는 이온플레이팅 장치를 이용하여 상기 배럴에 장착된 시편에 알루미늄 피막을 형성시키는 방법에 있어서, 상기 배럴에 초기 전압을 300V∼600V 정도 인가하여 30∼60분간 증착한 후에 전압을 50∼100V 낮추어 1시간 30분간 증착하고, 상기 필라멘트에 40∼60A의 전류를 흐르게 하고, 상기 이온화전극에는 40∼70V의 전압을, 상기 배럴에는 400∼800mA의 전류를 흐르게 하여 상기 시편가열장치로 시편을 200℃까지 가열하여 이온플레이팅 하는 것을 특징으로 한다. 이에 따르면, 시편의 청정 시간을 단축시킬 수 있으며, 밀착성 및 내식성이 향상되고, 피막의 신뢰도가 향상된 피막을 경제적으로 제조할 수 있는 것이다.The disclosed method for producing an aluminum coating includes a vacuum chamber in which a coating treatment is performed; A barrel fixed to the upper portion of the vacuum chamber and having a specimen installed therein; An electron beam evaporation source provided below the vacuum chamber opposite to the barrel; A shutter installed between the barrel and the electron beam evaporation source; A filament and an ionization electrode installed at one side of the electron beam evaporation source; A method of forming an aluminum film on a specimen mounted to the barrel by using an ion plating apparatus including a specimen heating device installed between the shutter and the barrel, wherein the initial voltage is applied to the barrel at about 300V to 600V. After the deposition for 60 minutes, the voltage was lowered by 50 to 100 V for 1 hour and 30 minutes, and a current of 40 to 60 A was flowed through the filament, a voltage of 40 to 70 V was supplied to the ionization electrode, and a current of 400 to 800 mA was applied to the barrel. It is characterized in that the ion plated by heating the specimen to 200 ℃ by the specimen heating device to flow. According to this, it is possible to shorten the cleaning time of the specimen, to improve the adhesion and corrosion resistance, and to economically produce a coating having improved coating reliability.

Description

이온플레이팅에 의한 알루미늄 피막의 제조방법 {Manufacturing method of Aluminum films by ion plating}Manufacturing method of aluminum film by ion plating {Manufacturing method of Aluminum films by ion plating}

본 발명은 알루미늄 피막 제조 방법에 관한 것으로, 보다 상세하게는, 전자빔 증발방식을 이용한 이온플레이팅 방법으로 기판에 인가하는 바이어스 전압을 조절하여 밀착력과 내식성 그리고 피막의 신뢰도를 향상시키기 위한 이온플레이팅에 의한 알루미늄 피막의 제조 방법에 관한 것이다.The present invention relates to a method for manufacturing an aluminum film, and more particularly, to ion plating to improve adhesion, corrosion resistance and film reliability by adjusting a bias voltage applied to a substrate by an ion plating method using an electron beam evaporation method. It is related with the manufacturing method of the aluminum film by this.

일반적으로, 알루미늄(Al)은 2.7의 비중과 660℃의 융점을 가지는, 은백색의 가볍고 부드러운 원소로, 늘림성, 퍼짐성이 풍부하여 가공하기 쉬운 금속이다. 이러한 알루미늄은, 금속이 갖는 제 특성 즉, 밀도가 낮고, 가공성, 내식성 및 열전도성이 우수한 특성으로 인하여 산업 상에 많이 응용되고 있다.Generally, aluminum (Al) is a silver-white, light and soft element having a specific gravity of 2.7 and a melting point of 660 ° C., and is a metal that is easy to process due to its rich stretchability and spreadability. Such aluminum has been widely applied in the industrial field due to the properties of metals, that is, a low density, and excellent workability, corrosion resistance and thermal conductivity.

최근들어 우주개발이나 항공산업이 크게 발달하면서 각종 소재에 알루미늄을 피막처리함으로써, 내식성 및 기계적 성질을 우수하게 하는 연구가 진행되고 왔다.In recent years, as the space development and the aviation industry have greatly developed, research has been conducted to improve the corrosion resistance and mechanical properties by coating aluminum on various materials.

예로서, 미국 맥도널드 더글라스 회사에서는 비행기에 사용되는 각종 부품에 알루미늄을 이온플레이팅하여 내부식 및 내마모 재료로 사용하고 있으며, 독일에서는 강판에 알루미늄을 진공증착하여 저장용 캔 재료 및 가전제품에 사용하고 있다. 그 밖에도 포장지나 각종 액세서리 등에 사용하는 장식용 코팅, 반도체용 도전박막 재료 등으로 다양한 분야에서 많이 응용되고 있다.For example, McDonald's Douglas, USA, uses aluminum as an ion-plating material for various parts used in airplanes as a corrosion and wear resistant material.In Germany, aluminum is vacuum-deposited on steel sheets to be used for storage can materials and home appliances. Doing. In addition, it is widely applied in various fields such as decorative coatings used for wrapping paper, various accessories, and conductive thin film materials for semiconductors.

한편, 일반적인 알루미늄 피막은 전기도금으로 코팅하였는데, 이 경우에는 그 효율이 낮아 생산성이 떨어지는 단점이 있었다. 이러한 단점을 해결하기 위하여, 물리 증착법을 이용하고 있다.On the other hand, the general aluminum coating was coated with an electroplating, in this case, the efficiency was low, there was a disadvantage in lowering productivity. In order to solve this disadvantage, a physical vapor deposition method is used.

이러한 물리 증착법에는 크게 진공증착법, 스퍼터링 그리고 이온플레이팅 등이 있으며, 내식성을 향상시키기 위해서는 이온플레이팅 방법을 주로 이용하고 있다.Such physical vapor deposition methods include vacuum deposition, sputtering, and ion plating. In order to improve corrosion resistance, ion plating is mainly used.

이러한 이온플레이팅 방법은, 1963년 미국의 Mattox에 의해 개발된 물리증착 기술의 일종으로서, 진공 상태에서 증발된 증기를 플라즈마층 내에서 이온화시켜 피도금체인 음극에 가속시켜 부착시키는 코팅방식으로, 상기 피도금체에는 증착물질뿐만 아니라, 가스, 이온 등도 함께 입사, 충돌하므로, 코팅층의 치밀화 및 밀착력 등을 향상시킬 수 있다.The ion plating method is a kind of physical vapor deposition technology developed by Mattox in 1963, and is a coating method in which vapor evaporated in a vacuum state is ionized in a plasma layer to accelerate and attach to a cathode, which is a plated body, Not only the deposition material but also gas, ions, and the like are incident and collided with the plated body, so that the densification and adhesion of the coating layer can be improved.

상기와 같은 물리 증착법으로 코팅되는 알루미늄 피막은, 대체적으로 피막층에 많은 구멍이 형성되어 있을 뿐만 아니라, 기판과의 밀착성이 열악하다는 단점이 있어, 이를 해결하기 위해서 진공증착의 경우에는 기판을 고온으로 가열하여야 하고, 이온플레이팅에서는 기판에 인가되는 전압을 증가시키거나 이온화율을 증대시키기 위해 더 많은 양의 방전가스를 도입하여야 한다.The aluminum film coated by the physical vapor deposition method as described above has a disadvantage in that not only a large number of holes are formed in the coating layer, but also poor adhesion to the substrate. In order to solve this problem, the substrate is heated to a high temperature in the case of vacuum deposition. In ion plating, a larger amount of discharge gas must be introduced to increase the voltage applied to the substrate or to increase the ionization rate.

그러나, 상기와 같이 기판을 고온으로 가열하면, 기판에 손상을 줄뿐만 아니라, 기판이 고온이 될수록 부착량이 감소하여 경제성이 저하되며, 기판에 고전압을 인가하는 방법 또한 기판에 손상을 주게 된다.However, when the substrate is heated to a high temperature as described above, not only the substrate is damaged but also the adhesion amount decreases as the substrate becomes a high temperature, so that economic efficiency is lowered, and a method of applying a high voltage to the substrate also damages the substrate.

또한, 상기와 같이 방전가스 도입량을 증가시켜 이온화율을 높이려면 방전가스가 피막에 혼입되어 피막을 손상시키게 되고, 방전가스와 증발되는 알루미늄 사이에 산란이 일어나 부착량의 감소를 초래하게 된다.In addition, to increase the ionization rate by increasing the amount of discharge gas introduced as described above, the discharge gas is mixed into the film to damage the film, and scattering occurs between the discharge gas and the evaporated aluminum, resulting in a decrease in adhesion amount.

상기와 같은 문제점을 해결하기 위해서, 여러 가지 방법의 진공증착, 스퍼터링, 이온플레이팅 장치나 방법(일본국 특허공고 소화 59-28569, 일본국 특허공고 소화 61-59861, 영국 특허공고 2141442, 일본국 특허공고 소화 57095749, 영국특허 2162205, 일본국 특허 7942676)이 개발되었으며, 이들은 주로 피막의 균일성 및 피막과 기판간의 밀착성, 발생된 플라즈마의 안정성, 증발원의 재질 및 구조, 높은 이온화율 등을 개선하고자 하였다.In order to solve the above problems, various methods of vacuum deposition, sputtering, ion plating apparatus or method (Japanese Patent Notification 59-28569, Japanese Patent Notification 61-59861, British Patent Publication 2141442, Japanese Country) Patent notification fire extinguishing 57095749, British Patent 2162205, Japanese Patent 7942676) has been developed, mainly to improve the uniformity of the film and the adhesion between the film and the substrate, the stability of the generated plasma, the material and structure of the evaporation source, high ionization rate, etc. It was.

또한, 상기와 같은 문제점을 해결하고자 본원의 발명자도 밀착성 및 표면 특성이 우수한 피막형성방법(대한민국 특허출원 96-71544), 소형 소결부품에의 고내식성 알루미늄 피막제조방법(대한민국 특허출원 97-72392) 및 밀착력 및 치밀도가 향상된 알루미늄 피막의 제조방법(대한민국 특허출원 99-57106) 등을 개발하여, 출원한 바가 있다.In addition, the inventors of the present application in order to solve the above problems, the film formation method excellent in adhesion and surface properties (Korean patent application 96-71544), a high corrosion-resistant aluminum film production method for small sintered parts (Korean patent application 97-72392) And a method of manufacturing an aluminum film having improved adhesion and density (Korean Patent Application No. 99-57106), and the like, have been filed.

그러나, 소결부품에 코팅을 하거나 다량의 시편을 한번에 코팅할 경우와, 가혹한 조건에서 제품을 사용할 경우에는 시편의 표면 상태 및 증착 조건에 따른 밀착력이 저하되는 문제점이 대두되었다.However, when coating the sintered parts or coating a large amount of specimens at once, and when using the product in the harsh conditions, the problem that the adhesion strength according to the surface condition and deposition conditions of the specimens has emerged.

따라서, 본 발명은 상기와 같은 문제점을 해결하기 위하여 안출한 것으로, 전자빔 증발방식을 이용한 이온플레이팅 방법으로, 기판에 인가되는 바이어스 전압을 조절하여 밀착력과 내식성 그리고 피막의 신뢰도를 향상시키도록 한 이온플레이팅에 의한 알루미늄 피막의 제조 방법을 제공하는데 그 목적이 있다.Accordingly, the present invention has been made to solve the above problems, the ion plating method using an electron beam evaporation method, the ion to improve the adhesion, corrosion resistance and film reliability by adjusting the bias voltage applied to the substrate It is an object to provide a method for producing an aluminum film by plating.

도 1은 본 발명에 따른 알루미늄 피막 제조 장치를 보인 개략적으로 보인 구성도,1 is a schematic view showing an aluminum film production apparatus according to the present invention,

도 2는 본 발명에 따른 피막제조 공정중의 바이어스 전압의 변화를 나타낸 도표,2 is a chart showing the variation of the bias voltage during the film production process according to the present invention,

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

1; 진공실 2; 전자빔 증발원One; Vacuum chamber 2; Electron beam evaporation source

3; 이온화전극 4; 필라멘트3; Ionization electrode 4; filament

5; 셔터 6; 두께모니터5; Shutter 6; Thickness monitor

7; 시편가열장치 8; 배럴7; Specimen heating apparatus 8; Barrel

9; 진공게이지 10; 가스주입장치9; Vacuum gauge 10; Gas injection device

11; 시편 12; 알루미늄11; Psalm 12; aluminum

13; 와이어공급장치13; Wire feeder

상기한 바와 같은 목적을 달성하기 위한 본 발명에 따른 이온플레이팅에 의한 알루미늄 피막의 제조 방법은, 피막처리가 수행되는 진공실; 상기 진공실의 상부에 고정되고 내부에 시편이 설치되는 배럴; 상기 배럴에 대향되는 진공실 하부에 마련되는 전자빔 증발원; 상기 배럴과 전자빔 증발원 사이에 설치되는 셔터; 상기 전자빔증발원의 일측에 설치되는 필라멘트와 이온화전극; 상기 셔터와 배럴 사이에 설치되는 시편 가열장치를 포함하는 이온플레이팅 장치를 이용하여 상기 배럴에 장착된 시편에 알루미늄 피막을 형성시키는 방법에 있어서, 상기 배럴에 초기 전압을 300V∼600V 정도 인가하여 30∼60분간 증착한 후에 전압을 50∼100V 낮추어 1시간 30분간 증착하고, 상기 필라멘트에 40∼60A의 전류를 흐르게 하고, 상기 이온화전극에는 40∼70V의 전압을, 상기 배럴에는 400∼800mA의 전류를 흐르게 하여 상기 시편가열장치로 시편을 200℃까지 가열하여 이온플레이팅 하는 것을 특징으로 한다.Method for producing an aluminum film by ion plating according to the present invention for achieving the object as described above, the vacuum chamber in which the film treatment is performed; A barrel fixed to the upper portion of the vacuum chamber and having a specimen installed therein; An electron beam evaporation source provided below the vacuum chamber opposite to the barrel; A shutter installed between the barrel and the electron beam evaporation source; A filament and an ionization electrode installed at one side of the electron beam evaporation source; A method of forming an aluminum film on a specimen mounted to the barrel by using an ion plating apparatus including a specimen heating device installed between the shutter and the barrel, wherein the initial voltage is applied to the barrel at about 300V to 600V. After the deposition for 60 minutes, the voltage was lowered by 50 to 100 V for 1 hour and 30 minutes, and a current of 40 to 60 A was flowed through the filament, a voltage of 40 to 70 V was supplied to the ionization electrode, and a current of 400 to 800 mA was applied to the barrel. It is characterized in that the ion plated by heating the specimen to 200 ℃ by the specimen heating device to flow.

이하, 첨부된 도면을 참조하여 본 발명의 실시예에 따른 알루미늄 피막의 제조 장치 및 방법의 구성 및 작용을 보다 상세하게 설명하기로 한다.Hereinafter, with reference to the accompanying drawings will be described in more detail the configuration and operation of the apparatus and method for producing an aluminum film according to an embodiment of the present invention.

도 1은 본 발명에 따른 알루미늄 피막의 제조 장치를 개략적으로 보인 구성도이다.1 is a configuration diagram schematically showing an apparatus for manufacturing an aluminum film according to the present invention.

도면에서, 부호 1은 진공실을 보인 것으로, 진공실(1)의 일측에는 이온화 전극(3)이 설치되고, 이온화전극(3)의 일측에는 필라멘트(4)가 설치된다.In the figure, reference numeral 1 denotes a vacuum chamber, in which one side of the vacuum chamber 1 is provided with an ionization electrode 3, and one side of the ionization electrode 3 is provided with a filament 4.

진공실(1) 내의 타측에는 알루미늄을 연속적으로 공급하기 위한 와이어 공급장치(13)가 설치되고, 와이어공급장치(13)의 일측에는 가스가 주입하기 위한 가스 주입장치(10)가 진공실(1)의 하부에 관통하여 설치된다.On the other side of the vacuum chamber 1, a wire supply device 13 for continuously supplying aluminum is installed, and on one side of the wire supply device 13, a gas injection device 10 for injecting gas is provided in the vacuum chamber 1. It is installed through the lower part.

상기 가스주입장치(10)와 필라멘트(4) 사이에는 와이어공급장치(13)로부터 공급되는 알루미늄이 마련되는 전자빔 증발원(2)이 설치된다. 여기에서, 상기 전자빔 증발원(2)은 증발율의 향상을 위하여 알루미나 도가니를 사용하는 것이 바람직하다.Between the gas injection device 10 and the filament (4) is provided an electron beam evaporation source (2) provided with aluminum supplied from the wire supply device (13). Here, it is preferable that the electron beam evaporation source 2 uses an alumina crucible for improving the evaporation rate.

그리고, 진공실(1)의 일측 중앙에는 셔터(5)가 가로질러 설치되고, 상기 셔터(5)의 상부에 진공실(1)의 진공을 측정하는 진공게이지(9)가 진공실(1)을 연통하여 설치된다.In addition, a shutter 5 is disposed across the center of one side of the vacuum chamber 1, and a vacuum gauge 9 for measuring the vacuum of the vacuum chamber 1 on the upper part of the shutter 5 communicates with the vacuum chamber 1. Is installed.

그리고, 진공게이지(9)가 설치된 맞은편 진공실(1)의 내측에는 시편에 코팅된 알루미늄 피막의 두께를 측정하는 두께모니터(6)가 설치된다. 그리고, 두께모니터(6)와 진공게이지(9)의 상측의 진공실(1) 양측 내벽에는 시편을 가열하기 위한 시편가열장치(7)가 설치된다. 시편 가열장치(7)의 상측에는 상기 진공실(1)을 수평으로 가로질러 시편(11)이 장입되는 배럴(8)이 설치된다. 여기에서, 배럴(8)을 기판이라고도 한다.Then, the thickness monitor 6 for measuring the thickness of the aluminum film coated on the specimen is installed inside the opposite vacuum chamber 1 in which the vacuum gauge 9 is installed. In addition, a specimen heating device 7 for heating the specimen is provided on both inner walls of the vacuum chamber 1 above the thickness monitor 6 and the vacuum gauge 9. On the upper side of the specimen heating device 7 is installed a barrel 8 into which the specimen 11 is inserted across the vacuum chamber 1 horizontally. Here, the barrel 8 is also called a board | substrate.

상기와 같이 구성된 본 발명에 따른 알루미늄 피막 제조 장치에 의한 알루미늄 피막의 제조방법을 살펴보기로 한다.The manufacturing method of the aluminum film by the aluminum film production apparatus according to the present invention configured as described above will be described.

먼저, 시편(11)을 배럴(기판)(8)에 장입하기 전에 시편(11)의 오염물질을 제거하기 위한 샌드브라스트(sand blasting)를 이용하여 전처리를 실시한다. 이렇게시편(11)의 전처리가 완료되면, 시편(11)을 배럴(8)에 장입시킨다. 그리고, 전자빔 증발원(2)에 알루미늄을 채운후, 도시하지 않은 진공펌프를 이용하여 진공실(1)을 원하는 진공도까지 배기한다. 여기에서, 진공실(1)의 진공도는 대략 10-5토르(torr) 이하로 한다. 이렇게 진공실(1)의 진공도가 10-5토르(torr) 이하가 되면, 시편(11)의 청정을 위해 가스 주입장치(10)로 아르곤 가스를 주입하고, 시편(11)에 음의 전압을 인가하여 시편(11)을 청정시킨다.First, prior to loading the specimen 11 into the barrel (substrate) 8, pretreatment is performed using sand blasting to remove contaminants from the specimen 11. When the pretreatment of the specimen 11 is completed in this way, the specimen 11 is charged into the barrel 8. After filling the electron beam evaporation source 2 with aluminum, the vacuum chamber 1 is exhausted to a desired degree of vacuum using a vacuum pump (not shown). Here, the degree of vacuum of the vacuum chamber (1) is less than approximately 10 -5 Torr (torr). When the vacuum degree of the vacuum chamber 1 is 10 −5 torr or less, argon gas is injected into the gas injection device 10 to clean the specimen 11, and a negative voltage is applied to the specimen 11. To clean the specimen (11).

여기에서, 시편(11)을 청정하게 하는 것은, 시편(11)에 존재하는 유기물과 같은 불순물뿐만 아니라 자연적으로 존재하는 산화막을 제거하기 위한 것으로, 진공도가 약 10-2토르(torr) 정도의 아르곤가스 분위기에서 시편에 400∼1000V 의 음의 전압을 인가하여 글로방전을 유도시켜 실시한다. 이렇게 시편(11)에 음의 전압을 인가하여 글로방전을 유도시키면, 방전영역에 존재하는 아르곤 이온이 시편(11)에 충돌하여 시편(11)에 존재하는 불순물이 제거되는 것이다.Here, the cleaning of the specimen 11 is intended to remove not only impurities such as organic matter present in the specimen 11 but also naturally occurring oxide films, and argon having a degree of vacuum of about 10 −2 torr (torr). In a gas atmosphere, a negative voltage of 400 to 1000 V is applied to the specimen to induce glow discharge. In this way, when a negative voltage is applied to the specimen 11 to induce a glow discharge, the argon ions present in the discharge region collide with the specimen 11 to remove impurities present in the specimen 11.

상기와 같이, 시편(11)의 청정이 끝나면, 진공실(1)의 진공도를 다시 10-5토르(torr) 이하로 유지시킨 후에, 이온화전극(3)에 40~70V의 전압을 인가한다. 그런 다음, 필라멘트(4)에 40~60A의 전류를 인가하여 증발원(2)의 전류를 증가시켜 알루미늄을 증발시킨다. 증발원(2)의 온도가 올라가서 알루미늄이 증발된다. 이렇게 알루미늄이 증발되어, 배럴(8)에 장입된 시편(11)에 이온플레이팅을 행한다. 이와 같이, 진공상태에서 이온플레이팅이 완료되면, 시편(11)을 진공실(1)의 외부로 꺼낸후 표면의 거칠음을 제거하고 금속성의 광택을 내기 위한 표면을 만들기 위해 샌드브라스트를 이용하여 연마하여, 알루미늄 피막을 제조하는 것을 완료한다.As described above, when the cleaning of the specimen 11 is finished, the vacuum degree of the vacuum chamber 1 is maintained at 10 −5 Torr or less again, and then a voltage of 40 to 70 V is applied to the ionization electrode 3. Then, a current of 40 to 60 A is applied to the filament 4 to increase the current of the evaporation source 2 to evaporate aluminum. The temperature of the evaporation source 2 rises and aluminum is evaporated. In this way, aluminum is evaporated and ion plating is performed on the specimen 11 charged in the barrel 8. As such, when ion plating is completed in a vacuum state, the specimen 11 is taken out of the vacuum chamber 1, and then polished using sand blasting to remove surface roughness and make a surface for metallic luster. This completes the manufacture of the aluminum film.

이하, 실시예를 통하여 본 발명을 보다 상세히 설명한다.Hereinafter, the present invention will be described in more detail with reference to Examples.

[실시예 1]Example 1

전술한 본 발명의 Al 피막 형성방법의 일반적인 수행 모드에 따라서, 증발율을 0.5㎛/min, 배럴(기판)에 인가되는 초기 전압을 400V로 하고, 약 30분 정도 초기 전압을 인가하여, 최종에 기판에 100V의 전압을 인가하여, 알루미늄 피막을 제조하였다. 이에 산출된 Al 피막의 기판에의 밀착성, 내식성, 신뢰도를 하기의 표 1에 상세하게 나타내었다.According to the general performance mode of the Al film forming method of the present invention described above, the evaporation rate is 0.5 μm / min, the initial voltage applied to the barrel (substrate) is 400 V, and the initial voltage is applied for about 30 minutes, and finally the substrate A voltage of 100 V was applied to the aluminum film. The adhesion, corrosion resistance, and reliability of the Al film thus calculated to the substrate are shown in detail in Table 1 below.

[실시예2]Example 2

실시예1과 동일하게 실시하되, 증발율을 1.0㎛/min, 초기 인가전압을 500V로, 전압인가시간을 1시간으로 하고, 최종 인가전압을 50V로 하여 Al피막을 제조하였으며, 이에 산출된 Al 피막의 기판에의 밀착성, 내식성, 신뢰도를 하기의 표 1에 상세하게 나타내었다.An Al film was prepared in the same manner as in Example 1 except that the evaporation rate was 1.0 μm / min, the initial applied voltage was 500 V, the voltage applied time was 1 hour, and the final applied voltage was 50 V. The adhesion to the substrate, the corrosion resistance, and the reliability thereof are shown in detail in Table 1 below.

[실시예3]Example 3

실시예1과 동일하게 실시하되, 증발율을 0.3㎛/min, 초기 인가전압을 500V로, 전압인가시간을 30분으로 하고, 최종 인가전압을 100V로 하여 Al피막을 제조하였으며, 이에 산출된 Al 피막의 기판에의 밀착성, 내식성, 신뢰도를 하기의 표 1에 상세하게 나타내었다.An Al film was prepared in the same manner as in Example 1 except that the evaporation rate was 0.3 μm / min, the initial applied voltage was 500 V, the voltage application time was 30 minutes, and the final applied voltage was 100 V. The adhesion to the substrate, the corrosion resistance, and the reliability thereof are shown in detail in Table 1 below.

[실시예4]Example 4

실시예1과 동일하게 실시하되, 증발율을 1.2㎛/min, 초기 인가전압을 300V로, 전압인가시간을 1시간으로 하고, 최종 인가전압을 50V로 하여 Al피막을 제조하였으며, 이에 산출된 Al 피막의 기판에의 밀착성, 내식성, 신뢰도를 하기의 표 1에 상세하게 나타내었다.An Al film was prepared in the same manner as in Example 1 except that the evaporation rate was 1.2 μm / min, the initial applied voltage was 300V, the voltage application time was 1 hour, and the final applied voltage was 50V. The adhesion to the substrate, the corrosion resistance, and the reliability thereof are shown in detail in Table 1 below.

[실시예5]Example 5

실시예1과 동일하게 실시하되, 증발율을 1.2㎛/min, 초기 인가전압을 600V로, 전압인가시간을 30분으로 하고, 최종 인가전압을 50V로 하여 Al피막을 제조하였으며, 이에 산출된 Al 피막의 기판에의 밀착성, 내식성, 신뢰도를 하기의 표 1에 상세하게 나타내었다.An Al film was prepared in the same manner as in Example 1 except that the evaporation rate was 1.2 μm / min, the initial applied voltage was 600 V, the voltage applied time was 30 minutes, and the final applied voltage was 50 V. The adhesion to the substrate, the corrosion resistance, and the reliability thereof are shown in detail in Table 1 below.

[비교예1]Comparative Example 1

실시예1과 동일하게 실시하되, 증발율을 0.5㎛/min, 초기 인가전압을 200V로, 전압인가시간을 30분으로 하고, 최종 인가전압을 100V로 하여 Al피막을 제조하였으며, 이에 산출된 Al 피막의 기판에의 밀착성, 내식성, 신뢰도를 하기의 표 1에 상세하게 나타내었다.An Al film was prepared in the same manner as in Example 1 except that the evaporation rate was 0.5 μm / min, the initial applied voltage was 200 V, the voltage application time was 30 minutes, and the final applied voltage was 100 V. The adhesion to the substrate, the corrosion resistance, and the reliability thereof are shown in detail in Table 1 below.

[비교예2]Comparative Example 2

실시예1과 동일하게 실시하되, 증발율을 0.5㎛/min, 초기 전압은 인가하지 않고, 최종 인가전압을 100V로 하여 Al피막을 제조하였으며, 이에 산출된 Al 피막의 기판에의 밀착성, 내식성, 신뢰도를 하기의 표 1에 상세하게 나타내었다.The Al film was manufactured in the same manner as in Example 1 except that the evaporation rate was 0.5 μm / min and the initial voltage was not applied, and the final applied voltage was 100 V. Thus, the Al film thus obtained was subjected to adhesion, corrosion resistance, and reliability. Is shown in detail in Table 1 below.

[비교예3]Comparative Example 3

실시예1과 동일하게 실시하되, 증발율을 0.5㎛/min, 초기 인가전압을 400V로, 전압인가시간을 15분으로 하고, 최종 인가전압을 100V로 하여 Al피막을 제조하였으며, 이에 산출된 Al 피막의 기판에의 밀착성, 내식성, 신뢰도를 하기의 표 1에 상세하게 나타내었다.An Al film was prepared in the same manner as in Example 1 except that the evaporation rate was 0.5 μm / min, the initial applied voltage was 400V, the voltage application time was 15 minutes, and the final applied voltage was 100V. The adhesion to the substrate, the corrosion resistance, and the reliability thereof are shown in detail in Table 1 below.

[비교예4]Comparative Example 4

비교예2과 동일하게 실시하되, 증발율을 1.2㎛/min, 초기 전압은 인가하지 않고, 최종 인가전압을 50V로 하여 Al피막을 제조하였으며, 이에 산출된 Al 피막의 기판에의 밀착성, 내식성, 신뢰도를 하기의 표 1에 상세하게 나타내었다.The Al film was manufactured in the same manner as in Comparative Example 2 except that the evaporation rate was 1.2 μm / min and the initial voltage was not applied, and the final applied voltage was 50 V. Thus, the Al film thus obtained was subjected to adhesion, corrosion resistance, and reliability to the substrate. Is shown in detail in Table 1 below.

[비교예5]Comparative Example 5

실시예1과 동일하게 실시하되, 증발율을 0.5㎛/min, 초기 인가전압을 400V로, 전압인가시간을 3시간으로 하고, 전압을 변경시키기 않고, Al피막을 제조하였으며, 이에 산출된 Al 피막의 기판에의 밀착성, 내식성, 신뢰도를 하기의 표 1에 상세하게 나타내었다.An Al film was prepared in the same manner as in Example 1 except that the evaporation rate was 0.5 μm / min, the initial applied voltage was 400 V, the voltage application time was 3 hours, and the voltage was not changed. The adhesion to the substrate, corrosion resistance, and reliability are shown in detail in Table 1 below.

[표1]Table 1

NONO 증발율(㎛/min)Evaporation rate (㎛ / min) 초기기판전압(V)Initial Board Voltage (V) 초기전압인가시간Initial voltage application time 최종기판전압(V)Final substrate voltage (V) 밀착력Adhesion 내식성Corrosion resistance 신뢰도Reliability 실시예1Example 1 0.50.5 400400 30분30 minutes 100100 Prize Prize Prize 실시예2Example 2 1.01.0 500500 1시간1 hours 5050 Prize Prize Prize 실시예3Example 3 0.30.3 500500 30분30 minutes 100100 Prize Prize Prize 실시예4Example 4 1.21.2 300300 1시간1 hours 5050 Prize Prize Prize 실시예5Example 5 1.21.2 600600 30분30 minutes 5050 Prize Prize Prize 비교예1Comparative Example 1 0.50.5 200200 30분30 minutes 100100 medium Ha medium 비교예2Comparative Example 2 0.50.5 -- -- 100100 medium medium Ha 비교예3Comparative Example 3 0.50.5 400400 15분15 minutes 100100 medium medium medium 비교예4Comparative Example 4 1.21.2 -- -- 5050 Ha Ha Ha 비교예5Comparative Example 5 0.50.5 400400 3시간3 hours 400400 Prize Ha medium

상기 표 1에서 밀착력 및 내식성, 피막의 신뢰도 등의 특성을 다음과 같은 시험을 통하여 3단계로 비교하였다.In Table 1, characteristics such as adhesion, corrosion resistance, and film reliability were compared in three steps through the following test.

상기 밀착력은 테이프 테스트와 스크레치 테스터를 이용하여 테스트한 후에 상대적인 비교예1∼5를 통하여, 밀착성이 매우 우수한 경우를 '상'으로, 중간일 경우를 '중', 테이프로도 Al피막이 떨어지는 경우를 '하'로 표시하였다.The adhesive force is tested by using a tape test and a scratch tester, and the comparative examples 1 to 5, the case of the very excellent adhesion to the 'phase', the middle case 'mid', the case where the Al film falls even with the tape 'Ha' is indicated.

그리고, 상기 피막의 내식성은 PCT(가압내습시험)시험에서 시험온도 121℃, 상대습도를 100%, 기압을 2기압으로 하여 시간별로 검사하되, 육안관찰을 통해 녹 발생, 기포 발생, 도금 깨짐, 도금 벗겨짐 등을 조사하여, 20시간 이상에서도 이상이 없을 경우를 '상'으로, 20∼10시간 사이에서 이상이 없을 경우를 '중'으로, 10시간 이내에서 이상이 발생할 경우를 '하'로 표시하였다.In addition, the corrosion resistance of the film is tested by the PCT (Pressure Humidity Test) test at a test temperature of 121 ° C., a relative humidity of 100%, and a pressure of 2 atm, with observing rust, bubble generation, plating cracking, Investigate plating peeling, etc., and the case of no abnormality within 20 hours is set to 'high'. Indicated.

그리고, 상기 피막의 신뢰도는 코팅 후에 코팅 층에 대한 검사 및 평가를 통해 밀착불량이 발생된 불량품의 비율을 비교한 것으로 외경이 23mm인 디스크형 영구자석 1000개를 한꺼번에 코팅하여, 불량품의 발생비율이 1%미만의 경우를 '상'으로, 1∼5% 사이인 경우를 '중'으로, 5%이상인 경우를 '하'로 표시하였다.In addition, the reliability of the film is a comparison of the ratio of defective products produced by the inspection and evaluation of the coating layer after coating to coat 1000 disc-shaped permanent magnets having an outer diameter of 23mm at once, the rate of occurrence of defective products Less than 1% is indicated as 'up', between 1 and 5% is indicated as 'medium', and more than 5% as 'low'.

이상에서 설명한 바와 같이, 본 발명에 따르면, 시편의 청정 시간을 단축시킬 수 있으며, 밀착성 및 내식성이 향상되고, 피막의 신뢰도가 향상된 피막을 경제적으로 제조할 수 있는 장점이 있다.As described above, according to the present invention, it is possible to shorten the clean time of the test piece, improve adhesion and corrosion resistance, and have an advantage of economically manufacturing a film having improved film reliability.

Claims (2)

피막처리가 수행되는 진공실; 상기 진공실의 상부에 고정되고 내부에 시편이 설치되는 배럴; 상기 배럴에 대향되는 진공실 하부에 마련되는 전자빔 증발원; 상기 배럴과 전자빔 증발원 사이에 설치되는 셔터; 상기 전자빔증발원의 일측에 설치되는 필라멘트와 이온화전극; 상기 셔터와 배럴 사이에 설치되는 시편 가열장치를 포함하는 이온플레이팅 장치를 이용하여 상기 배럴에 장착된 시편에 알루미늄 피막을 형성시키는 방법에 있어서,A vacuum chamber in which the film treatment is performed; A barrel fixed to the upper portion of the vacuum chamber and having a specimen installed therein; An electron beam evaporation source provided below the vacuum chamber opposite to the barrel; A shutter installed between the barrel and the electron beam evaporation source; A filament and an ionization electrode installed at one side of the electron beam evaporation source; In the method for forming an aluminum film on the specimen mounted to the barrel by using an ion plating apparatus including a specimen heating device installed between the shutter and the barrel, 상기 배럴에 초기 전압을 300V∼600V 정도 인가하여 30∼60분간 증착한 후에 전압을 50∼100V 낮추어 1시간 30분간 증착하고, 상기 필라멘트에 40∼60A의 전류를 흐르게 하고, 상기 이온화전극에는 40∼70V의 전압을, 상기 배럴에는 400∼800mA의 전류를 흐르게 하여 상기 시편가열장치로 시편을 200℃까지 가열하여 이온플레이팅 하는 것을 특징으로 하는 이온플레이팅에 의한 알루미늄 피막의 제조 방법.An initial voltage of about 300V to 600V was applied to the barrel for 30 to 60 minutes, and then the voltage was lowered to 50 to 100V for 1 hour and 30 minutes, and a current of 40 to 60 A flowed to the filament, and 40 to the ionization electrode. A method of producing an aluminum coating by ion plating, wherein a voltage of 70 V is applied to the barrel and a current of 400 to 800 mA flows, thereby heating the specimen to 200 ° C. with the specimen heating device. 제1항에 있어서, 상기 전자빔 증발원은 알루미나 도가니인 것을 특징으로 하는 이온플레이팅에 의한 알루미늄 피막의 제조 방법The method of manufacturing an aluminum film by ion plating according to claim 1, wherein the electron beam evaporation source is an alumina crucible.
KR10-2000-0049077A 2000-08-24 2000-08-24 Manufacturing method of Aluminum films by ion plating KR100430410B1 (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6179760A (en) * 1984-09-27 1986-04-23 Shizuokaken Formation of aluminum oxide film by activated reactive ion plating
JPH01290762A (en) * 1988-05-17 1989-11-22 Seiko Instr Inc Ion plating method
KR920012512A (en) * 1990-12-29 1992-07-27 정명식 Manufacturing System of Aluminum (AI) Film by Arc Discharge Induction Ion Plating
JPH06316763A (en) * 1993-04-28 1994-11-15 Sumitomo Metal Mining Co Ltd Formation of wear resistant hard film
KR100314727B1 (en) * 1997-12-23 2002-02-19 신현준 Method of manufacturing aluminum films on small sintered parts
KR100384449B1 (en) * 1999-12-13 2003-05-22 재단법인 포항산업과학연구원 Manufacturing method of Al films having good adhesion

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6179760A (en) * 1984-09-27 1986-04-23 Shizuokaken Formation of aluminum oxide film by activated reactive ion plating
JPH01290762A (en) * 1988-05-17 1989-11-22 Seiko Instr Inc Ion plating method
KR920012512A (en) * 1990-12-29 1992-07-27 정명식 Manufacturing System of Aluminum (AI) Film by Arc Discharge Induction Ion Plating
JPH06316763A (en) * 1993-04-28 1994-11-15 Sumitomo Metal Mining Co Ltd Formation of wear resistant hard film
KR100314727B1 (en) * 1997-12-23 2002-02-19 신현준 Method of manufacturing aluminum films on small sintered parts
KR100384449B1 (en) * 1999-12-13 2003-05-22 재단법인 포항산업과학연구원 Manufacturing method of Al films having good adhesion

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