KR100407363B1 - chamber for manufacturing semiconductor device - Google Patents

Abstract

The present invention relates to a gas storage device, and a semiconductor manufacturing chamber for depositing a thin film on the wafer through the chemical reaction of the gas material is drawn from the gas storage device is placed therein, the narrowing funnel An upper cover of a shape; A top flow injector installed at an inner center of the upper cover to diffuse and inject gaseous substances stored in the gas storage device; A lower base coupled to a lower end of the upper cover; It is mounted in the lower base, and provides a chamber for manufacturing a semiconductor including a chuck for controlling the temperature and support of the wafer seated on the upper surface.

Description

Chamber for manufacturing semiconductor device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chamber for semiconductor manufacturing, and more particularly, to a chamber comprising a combination of an upper cover and a lower base, and a top flow injector installed on an inner surface of the upper cover. It is related with the chamber for semiconductor manufacturing employ | adopted.

In recent years, with the development of science, the field of new materials, which enables the development and processing of new materials, has been rapidly developed, and the development results of these materials are driving the development of the semiconductor industry.

In general, a semiconductor device is a high-scale integrated circuit (LSI: Large Scale Integration) implemented through a process of depositing and patterning a plurality of thin films on an upper surface of a wafer, which is a substrate. Processes, such as deposition and patterning, are typically performed in a chamber type process module.

At this time, the chamber-type process module has a variety of configurations according to the desired process, but as an example of this will be described with respect to the chamber-type process module including a chamber (chamber) having an upper dome (dome) shape, 1 is a sealed reaction vessel in which a wafer 1 is seated therein, and a direct processing process such as depositing or patterning a thin film on the upper surface of the wafer 1 is performed as shown in FIG. 1. A chamber 20 and a gas storage device 40 for storing a gaseous material for the progress of the desired process in the chamber 20.

At this time, the chamber 20, which is the object to be processed, is placed on the inside of the chamber 20, and the chamber 20 which directly processes the wafer 1 is formed on the lower base 20b made of a metal material having a certain internal content therein, and on the upper portion of the lower base. Including a dome-shaped upper cover (20a) made of a material such as quartz (quartz) to be coupled, and defines a space separated from the outside therein, the inner space of the chamber 20, the chuck ( 30) is installed to control the holding and temperature of the wafer (1) seated on the upper surface.

In addition, the chamber 20 has a supply pipe 42 having one end connected to supply the necessary material from the gas storage device 40 described above, and a discharge pipe 62 for controlling the pressure by discharging the gas therein. And a pump (60) attached at the end thereof, in particular, the other end of the supply pipe (42) connected to the gas storage device (40) described above is an injector (installed on the inner surface of the upper cover (20a) of the chamber (20). connected to the injector to diffuse the gaseous material throughout the chamber 20.

In this case, the injector described above is usually installed in the center of the inner surface of the upper cover 20a to uniformly diffuse the gaseous material, and injects the gaseous material from the upper portion of the wafer 1 to the lower end thereof. It is common to adopt 22), and the shape can be variously classified, such as the shower head type or the nozzle type shown, but its purpose is common to uniform diffusion of gaseous substances.

In the general chamber type process module 10 having such a configuration, when the wafer 20 is first seated on the upper surface of the chuck 30 and the chamber 20 is sealed, the pump 60 installed at the end of the discharge pipe 62 is provided. After the internal environment of the chamber 20 is uniquely adjusted through the supply and the like, the gas material introduced into the chamber 20 through the supply pipe 42 and the top flow injector 22 connected to the gas storage device 40. The wafer 1 is processed and processed by chemical reaction.

However, the chamber 20 including the general dome-shaped upper cover 20a has some problems. In particular, the thin film is deposited on the upper surface of the wafer 1 by atomic layer deposition (ALD). Incomplete purge and non-uniform thin film formation frequently occur.

The atomic layer deposition method is similar to the general chemical vapor deposition (CVD) method in that the chemical reaction between gas molecules is used, but the conventional chemical vapor deposition method injects a plurality of gas molecules into the chamber at the same time. Thus, unlike depositing the reaction product generated on the wafer onto the wafer, one gaseous material is injected into the chamber and then purged to leave only the gas adsorbed physically on top of the heated wafer. It is different in that it deposits chemical reaction products that occur only on the upper surface of the wafer by injecting other gaseous materials.

The thin film realized through the atomic layer deposition method has a very good step coverage characteristic, and in particular, it has the advantage that it is possible to realize a pure thin film with a very low impurity content. Considering only one process cycle using the material, injection of the first gas, purge, and injection of the second gas should proceed sequentially.

However, since the thickness of the thin film that is realized through one process cycle of the atomic layer deposition method is generally 0.3 nanometer (nm) or less, in order to realize a thin film having a desired thickness, the process cycle is repeated several times to several tens of times. In this case, it further includes another step of purging the second gas between each process cycle.

That is, referring to the drawings, FIG. 2 is a time / process graph sequentially showing a sequence of processes over time assuming a case of implementing a thin film through three repeated process cycles. After the first gas is expressed, the first gas remaining in the chamber is removed through the purge of step B, and the second gas is injected through the purge step of B after removing the second gas of the process C. The process cycle T1 is configured, and the process cycle is repeated three times.

Therefore, the chamber-type process module 10 including the chamber 20 employing the top flow injector 22, which is composed of a combination of the general dome-shaped upper cover 20a and the lower base 20b of FIG. 1 described above. In the case of performing the atomic layer deposition method through), after the injection step of each gaseous material, it is necessary to purge the residual gas inside the chamber 20 through the pump P installed at the end of the discharge pipe 62. Since the chamber 20 has a large area therein, a long time for such a purge is required and it is difficult to expect a reliable purge.

Therefore, when the residual gaseous material inside the chamber 20 is not completely purged, a thin film having high purity and excellent step coverage characteristics to be obtained through the atomic layer deposition method cannot be expected, and when the purge time is long, the chamber 20 In order to accelerate the chemical reaction between the gaseous substances made in the inside), there is a problem that harms the unique environment imparted inside the chamber 20.

In addition, in the chamber 20 having the top cover 20a having a general dome shape, a part of the gaseous material injected into the chamber 20 through the injector 22 is diffused along the inner wall of the dome shape top cover 20a. In the meantime, the occurrence of eddy as shown by the dotted arrow is frequently observed, and this vortex eventually prevents even diffusion of the gaseous material to form a difference in density locally, resulting in an uneven thin film. Bar, although it has a limit that is difficult to control even by adjusting the angle of the inner surface of the dome-shaped upper cover (20a).

This problem is not limited to the above-described atomic layer deposition method, and in the course of the general chemical vapor deposition process, the composition and control of the inherent environment in the chamber 20 are difficult due to the large contents of the chamber 20, and There is still a problem that a non-uniform thin film is realized by vortex and the like.

The present invention has been made to solve the above problems, while minimizing the volume of the chamber, it is possible to uniformly spray the diffusion of gaseous material, and in particular to provide a chamber that can suppress the vortex generated during the diffusion of the gaseous material Its purpose is to.

1 is a structural diagram showing a chamber for manufacturing a general semiconductor

2 is a time / process graph of an atomic deposition method having three sub periods.

3 is a structural diagram showing a chamber for manufacturing a semiconductor according to the present invention

4A is a perspective view illustrating an upper cover included in a chamber for manufacturing a semiconductor according to the present invention.

Figure 4b is a side view showing the upper cover included in the chamber for manufacturing a semiconductor according to the present invention

<Description of the symbols for the main parts of the drawings>

1: wafer 110: process module for semiconductor manufacturing

120: chamber 120a: top cover

120b: lower base 122: top flow injector

130: Chuck 140: gas storage device

142: supply pipe 162: discharge pipe

160: Pump

The present invention is a chamber for manufacturing a semiconductor for depositing a thin film on the wafer through the chemical reaction of the gas storage device and the gas material is drawn from the gas storage device in order to achieve the object as described above. A funnel-shaped upper cover that becomes narrower in width; A top flow injector installed at an inner center of the upper cover to diffuse and inject gaseous substances stored in the gas storage device; A lower base coupled to a lower end of the upper cover; It is mounted in the lower base, and provides a chamber for manufacturing a semiconductor including a chuck for controlling the temperature and support of the wafer seated on the upper surface.

At this time, the top cover is characterized in that consisting of a material containing quartz, the side surface of the funnel-shaped top cover is characterized in that the trumpet shape recessed into the inside.

In addition, the gas storage device is characterized in that to store different types of gas and purge gas, respectively, and to implement a thin film on the upper surface of the wafer through an atomic layer deposition method.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The present invention provides a funnel shape instead of a general dome shape to the upper cover constituting the chamber, and a top flow type injector is adopted, which is illustrated in FIG. 3.

As shown, the chamber 120 is a sealed reaction vessel in which a wafer 1 is placed therein, and a direct processing process such as depositing or patterning a thin film on the upper surface of the wafer is performed. ), And the gas storage device 140 for storing the gaseous material for the progress of the desired process in the chamber 120 is the same as the general case.

At this time, the wafer 120, which is the object to be processed, is seated therein, and the chamber 120 for directly processing the wafer 120 includes a lower base 120b of a metal material having a predetermined amount of space therein, and an upper portion of the lower base. It characterized in that it comprises a funnel (funnel) -shaped upper cover (120a), the interior of the chamber 120 by the combination of the upper cover (120a) and the lower base (120b) is a space separated from the outside Have.

That is, the chamber 120 according to the present invention includes a funnel-shaped upper cover 120a that is narrower in width and a cylindrical lower base 120b that is coupled to the lower end of the upper cover 120a. The upper cover 120a has a conical shape, preferably as shown in FIGS. 4A and 4B, having two sides corresponding to each other when viewed in plan, having a trumpet-shaped employee cone shape concave therein. The trumpet-shaped upper cover 120a is made of quartz or the like material.

In the internal space of the chamber 120 defined by the funnel-shaped upper cover 120a and the lower base 120b coupled to the lower end of the upper cover 120a, the chuck 130 holding the wafer 1 is held. The wafer 1 is mounted on the upper surface thereof, and the chuck 130 is preferably provided with a function of controlling the temperature of the wafer 1.

In addition, the chamber controls the pressure by discharging the gas in the chamber and the supply pipe 142 having one end connected to the gas storage device 140 so that the necessary material can be supplied from the gas storage device 140 described above. Further comprising a discharge pipe 162 and the pump 160 attached to the end of the bar, the other end of the supply pipe 142 connected to the above-described gas storage device 140 is the top cover 120a of the chamber 120 It is connected to the injector 122 of the top flow method installed in the center of the inner surface of the), and the gaseous material is injected and diffused from the upper portion of the wafer 1 to the lower end thereof.

In this case, it will be apparent to those skilled in the art that the injector 122 may be formed in various forms to enable uniform diffusion of gaseous materials, such as a shower head type or a nozzle type as illustrated.

Referring to the process of manufacturing a semiconductor device through the chamber-type process module according to the present invention having such a configuration, first the wafer 1 is seated on the upper surface of the chuck 130 to seal the chamber 120, the discharge pipe 162 The internal environment of the chamber 120 is uniquely controlled through the pump 160 installed at the end of the). Thereafter, through the supply pipe 142 connected to the gas storage device 140 and the top flow injector 122, a chemical reaction of the gaseous material introduced into the chamber 120 is introduced and processed, thereby processing the wafer 1. To deal with.

At this time, the chamber 120 according to the present invention gives a conical shape to the upper cover 120a, thereby reducing the area in the chamber 120 to facilitate environmental control in the chamber 120, and also vortex phenomena of gaseous substances. In particular, the chamber 120 according to the present invention can obtain an improved effect when the thin film is deposited using the atomic layer deposition method on the upper surface of the wafer 1.

In this case, the gas storage device 140 is configured to separately store different types of reactive gas and purge gas, and the wafer 120 is seated on the upper surface of the chuck 130. After that, the process cycle of the first gas injection, the first gas purge, the second gas injection, and the second gas purge step is repeated in the same manner as in the general case described above. Will be deposited.

In order to achieve the above object, the present invention provides a funnel shape to the upper cover of the chamber to enable more uniform diffusion of the gaseous material. In particular, the side surface of the top cover of the funnel shape is recessed into the inside thereof. By implementing the trumpet shape, it is possible to effectively control the vortex phenomena of gaseous substances frequently generated in the general chamber and to reduce the internal area of the chamber.

Therefore, it is easy to maintain and control the unique environment formed inside the chamber and has the advantage of realizing the improved thin film. In particular, when the chamber according to the present invention is used in the atomic layer deposition method, As the internal area is reduced, it is possible to shorten the purge time, and thus a greater effect can be expected.

This makes it possible to manufacture more improved semiconductor devices.

Claims (4)

A chamber for manufacturing a semiconductor for depositing a thin film on a wafer through a chemical reaction of a gas storage device and a gaseous material drawn from the gas storage device by mounting a wafer therein, An upper cover having a funnel shape that becomes narrower in width; A top flow injector installed at an inner center of the upper cover to diffuse and inject gaseous substances stored in the gas storage device; A lower base coupled to a lower end of the upper cover; Chuck mounted inside the lower base to control the temperature and support of the wafer seated on the upper surface Chamber for manufacturing a semiconductor comprising a The method according to claim 1, The top cover is a chamber for manufacturing a semiconductor consisting of a material containing quartz The method according to claim 1, The side surface of the top cover of the funnel shape is a semiconductor manufacturing chamber having a trumpet shape concavely recessed therein. The method according to claim 1, The gas storage device stores different types of gas and purge gas, respectively, Chamber for manufacturing a semiconductor to implement a thin film on the upper surface of the wafer through an atomic layer deposition method