TW504738B - Atomic layer deposition method and semiconductor device fabricating apparatus having rotatable gas injectors - Google Patents

Abstract

The present invention discloses an ALD method including: respectively loading a plurality of substrates into a plurality of reaction cells, the plurality of reaction cells being disposed in a reaction chamber isolated from an exterior condition; alternately and repeatedly applying various vapor substances onto each substrate such that a thin film is formed on each substrate, wherein a plurality of vapor injection pipes each injecting one of the vapor substances periodically scans over each substrate to apply the various vapor substances alternately and repeatedly onto each substrate. In another aspect, the present invention discloses a semiconductor device fabricating apparatus including: a plurality of susceptors on which the same number of substrates are respectively mounted; a reaction chamber isolating all the substrates on the plurality of susceptors from an exterior condition; a plurality of vapor injection pipes disposed over the substrates, each vapor injection pipe relatively rotating with respect to the substrates and periodically applying a vapor substance onto each substrate; a plurality of exhausting portion each disposed near a corresponding susceptor to exhaust a remaining vapor substance out of the reaction chamber.

Description

504738 V. Description of the invention (1) [Background of the invention The present invention relates to an atomic layer deposition (ALD) method and a semiconductor device manufacturing equipment with improved process time. Description of the subject In recent years, electronic devices have been highly integrated, and have been included in the vertical ruler 2 pi M and 2 micrometers. Specifically, as a dynamic random access memory

Dynamic Random Access Memory) device, a dielectric layer of its memory capacitor and a gate insulation layer as a thin film transistor (TFT) device, are becoming thinner in the vertical development system. ^ Under the design specifications of 13 micron or smaller size, in order to meet the same specifications, the clothes produced have new electrical properties, and the new materials have replaced the conventional materials of j 彺. For example, as the aforementioned closed-electrode insulating layer, a high-dielectric thin film composed of materials such as ΑΛΛ, Hf〇2, Zr02, will be selected to replace a heat-treated oxide film ( It is usually a silicon oxide (silicon oxide film) which is heat-treated in an oxygen atmosphere. & dram's dielectric layer, a very thin film composed of high dielectric compounds such as boron gill titanium (BST) and lead rhenium titanium (PZT) compounds will be chosen to replace a chemical vapor deposition method. The resulting silicon nitride (si HcON nitride) film. In the past, the metal organic chemical vapor deposition (MCVD, Metallic Chemical Vapor Deposition) method was used to make conventional thin films containing silicon oxide or nitride

Page 6 504738 V. Description of the Invention (2) — Membrane. However, the MOCVD method is not suitable for the production of new thin films containing boron mirror titanium (BST) specific compounds and a thickness of nearly 100 angstronl, so new methods have been developed. The atomic layer deposition (ALD) method is a typical embodiment of the new method. In the MOCVD method, various kinds of vapor substances are simultaneously supplied to a substrate and then deposited on it to form a thin film. However, in the ald method, various vapor substances on the substrate are supplied to the substrate in an alternating and repeating manner, so that most atomic layers will be successively deposited on the substrate to form a thin film. In recent years, the ALD method has been widely used to make a thin film in a semiconductor package. In an embodiment of the ALD method, the growth of the thin film is determined by a surface chemical reaction. Therefore, even though the substrate has an irregular shape, the thin film on the substrate can grow uniformly. In addition, because the growth of the film is not proportional to time but proportional to the number of cycles that each successive group of vapor substances can be supplied ', the thickness of the film can be precisely controlled. In FIG. 1, a reaction chamber of an ALD device made according to the related technology includes a lower case 11 & and an upper case no 0b, which generally provides a reaction isolated from external conditions. District 丨 〇2. = The injection holes 140 are successively tendered in an alternating sequence. I: A kind of material gas will flow along the upper surface of a substrate i 30, and these gas systems will be discharged through a vent hole m ^ on the seat. This Ξ J 'b' S (il2〇3) ^ # f p! Ed Physics Letters Journal Volume 71

504738 V. Invention Description (3) 36 〇4 was proposed. The temperature of the substrate 130 was maintained at 37 ° C. in a reaction chamber 100 heated at a temperature of 150 ° t. Then, the trimethylaluminum (a 1 (CH3) 3) pure rat gas (A r), water vapor, and repurified argon (ar) took 1 shift, 14 seconds, 1 second, and 14 seconds, respectively. The time is successively sprayed into the reaction zone 102, thereby forming a cycle. This cycle is performed as shown in the graph in Fig. 2. The vertical axis of the graph indicates the process time. However, because this chart is a schematic illustration, each cycle is not proportional to the length of the cycle. There are some problems with the methods described above based on the related art. Because the growth of the film is proportional to the number of cycles, the entire process time can be reduced by reducing the time required for each cycle. However, because the conventional reaction chamber uses a valve to control the movement of various vapor substances, a time delay due to the residual response time of the valve is generated. In another embodiment, when various vapor substances fill the entire reaction zone and react with the substrate, the vapor substances are discharged from the reaction chamber and the other two vapor substances are ejected into the reaction zone. The injection and exhaust actions mentioned above take some time, making it difficult to shorten the time of one cycle. In other words, the growth rate of the thin film in the reaction chamber made according to the related technology is very slow, and this means that the conventional ALD method has a relatively low productivity. In addition, in the reaction chamber made according to the related technology, Shen Xingsheng only touched the substrate and the vapor substance flowing parallel to the substrate. Therefore, the deposition rate of vapor substances is very low, resulting in poor production efficiency. One

f f A multi-positive method to solve the above-mentioned problem of low productivity. In the case of t, a plurality of substrates are used instead of single-substrates to be fixed on one substrate of the reaction zone, and the deposition behavior can be performed at the same time. The first virtual-2 can achieve the same purpose in ALD equipment by replacing a single reaction with multiple reaction chambers. The first modification method is proposed that the size of the reaction chamber can be sufficiently enlarged to accommodate the plurality of substrates. However, @ 'large reaction chamber will cause the vapor material exhaust rate to slow down' and allow the gas to be exhausted to have a gas phase reaction in the reaction chamber. A first correction method is proposed in which each of the plurality of reaction chambers is connected to a vapor supply pipe for supplying a gaseous substance. Therefore, the Ald equipment has a complicated structural configuration, which will lead to an increase in the cost of the ALD equipment. [Comprehensive description of the invention] Therefore, the present invention is to indicate an ALD method and a semiconductor device manufacturing equipment. The method and equipment In essence, one or more problems caused by related technical limitations and defects are excluded. One of the objects of the present invention is to provide an improved ALD method and a semiconductor device manufacturing equipment which can realize the time delay caused by a valve. Another object of the present invention is to propose an improved ALD method and a semiconductor device manufacturing apparatus capable of achieving a high deposition rate of a vapor substance. Additional features and advantages of the present invention will be presented in the following description, and a partial understanding can be obtained from the description, or learned through the implementation of the invention

V. Description of the invention (5) Please refer to the structure specifically pointed out in the patent statement and the figure 1 阙 in this part. The figure read will understand the purpose of the present invention and obtain other sublayers i: ΐ i] 上 ϊ 二t 二 本 发 = The preferred embodiment is proposed-a kind of original reaction unit area :, Xi;:. Load a plurality of substrates to a plurality of isolated reactions; respectively, arranged in a membrane, of which, each substrate It can be generated-a periodic scan is performed on the thin film, so that different kinds of vapors should be applied to each substrate. The heating of each substrate is selectively performed by a heater placed in the reaction chamber: a radio frequency (RF) power source is selectively applied to a steam jet tube, and a plasma is generated in the reaction chamber. In another embodiment, the present invention proposes a semiconductor device 'which includes: a plurality of crystals respectively mounted with the same number of bases' & $ 丄-so as to isolate all substrates on the plurality of crystal bases from external conditions: Reaction chamber; a plurality of vapor injection tubes arranged above the substrate, each of the base injection tubes can rotate relative to the substrate, and supply _ a vapor substance to each substrate in a periodic manner; a plurality of exhaust parts, Each exhaust gas is arranged on a corresponding crystal base to discharge the residual i-body in the reaction chamber. A vertical distance between the crystal holder and the steam injection tube is variable. 504738 V. Description of the invention (6) This equipment selects the ring for heating the substrate. This equipment is relatively wall-mounted, which makes the supply suitable. In one implementation, a tube system spins another vapor, and another crystal base system, a crystal base rotation frequency (RF) vapor, must be provided for demonstration, and optionally includes a heater placed under a plurality of crystal bases. Even better, the vapor substance used to separate the substrates on the substrate is only the same as that of the separated substrate. This nozzle is rotating in the spin mode. The selection of the power source for the speed of rotation makes it possible to clarify and further clarify that a further plurality of crystal bases are fixed. In this example, the device is better equipped with a speed position controller. , A plurality of steam injection pipe system In this example, the device is better and position controller. A plurality of vapor slurries can be added to the reaction chamber to generate the foregoing general description and subsequent general descriptions, and the intention is to explain the present invention. And a plurality of steam contains one for controlling and fixing, and one for spray pipe. Detailed description of the patent application [Detailed description of the preferred embodiment] For the preferred embodiment of the present invention, there will be detailed instructions The examples of this instruction will be illustrated in the accompanying drawings. In FIG. 3 ′, a semiconductor device made in accordance with a preferred embodiment of the present invention includes a manufacturing chamber 300 including a reaction chamber 304. The reaction chamber 304 includes a plurality of J crystal bases 3 0 3, and a corresponding number of substrates 314 are mounted on the crystal bases, respectively. In other words, the plurality of substrates 31 4 are communicated with by the reaction chamber 3 0 4 Outer 504738 V. Description of the Invention (7) The status of the world is isolated. The steam supply officer 30 5 penetrates into the upper part of the reaction chamber 304 and is connected with a plurality of steam injection pipes 3 0 8 a to 3 0 8 d (see FIG. 4). The plurality of steam injection pipes are arranged in the reaction chamber 30. 4 Above the inner substrate 3 1 4. Each of the steam injection pipes 30 8a to 308d has a plurality of hole openings 30 7 facing the substrate 314. The steam supply pipe 3 0 5 contains a plurality of concentric pipes (not shown) therein. Each concentric tube has a different diameter and is used to determine which vapor substance passes through which tube. The plurality of concentric pipes are connected to the plurality of steam injection pipes 308a to 308d, respectively. Therefore, a plurality of vapor injection tubes 3008a to 30.8 (1 respectively supply different vapor substances to the substrates 3 and 4. After the vapor substances are deposited on the substrate 314, the same vapors remaining in the reaction chamber 304 The substance will be discharged through the exhaust pipe 3 06. A plurality of ring-shaped heaters 3 1 2 are arranged in a concentric manner below the base 3 03 for heating the substrate during deposition. Vapor supply pipe 3 05 can rotate relative to the concentric axis of a plurality of concentric tubes (not shown) and move in the direction of the vertical axis. The height and rotation speed of the steam supply tube 305 are controlled by a position controller 316 Because a plurality of steam injection pipes 3 08a to 3.08 (1 series is connected to the steam supply pipe 305, > they will also rotate or move together with the steam supply pipe 305., to say ' When a plurality of steam injection tubes 3 0 8a to 3 08d are rotated above the substrate 314, they will suitably eject various vapor substances onto the substrate 314. At this time, 'each base 303, the corresponding substrate 314 and preparation office

504738

5j) defined in the reaction unit area (32 ° & to 32 ° (1) in FIG. 5. In other words, each reaction unit area 32 in FIG. 5 is defined by the knife partition wall 31 °. The technology includes the Bu Jingqian 3 and the corresponding substrate 314. The spray nozzles 308a to 308, which spray different kinds of gas, will be located in each reaction unit area in a continuous and repeated manner ( From 32 ° to 32 ° (1) in Fig. 5. Therefore, when various kinds of vapor substances are supplied to the respective substrates, it is accompanied by + example a, and the first to fourth vapor injection pipes 308a in FIG. 4 To 30.8 (1 each ejected trisalium aluminum (AUCH3) 3), pure argon (Ar), water vapor (jvater japor), and repurified argon (Ar). Thereafter, when the jth to the 4th When each of the steaming and spraying officers 308a to 308d rotates the four-substrate substrate 314 (FIG. 5) fixed on the crystal base 3303 (FIG. 5), there will be an alumina (aUminum ox i de) film on each substrate. When a steam jet tube scans a substrate, the substrate and the steam vapor substance will be surrounded by the partition wall 31 0 (in FIG. 5) and thus constitute a reaction unit area. Therefore The respective reaction unit regions (32a to 32 ° (Fig. 5) have almost no chemical correlation with each other. 0 • The rotation speed of the radon gas injection tubes 308a to 308d is preferably a variable value. The position controller 316 controls. Further, in the above-mentioned process, the vapor injection pipes 308a to 308d and the partition wall 310 are preferably kept in a very close gap, as shown in Fig. 3. In the above-mentioned process The time series between the different periods of supply of various vapor substances is inversely proportional to the rotation speed of the steam injection pipes 308a to 308d. In other words, 'the rotation speed of the steam injection pipes 3 08a to 308d is different,

V. Description of the invention (9) 阙: to :: because the flow of vapor material does not exist by being late. Returning to FIG. 3 with the time delay caused by the response time of the valve, when the deposition guard plate is continuously learned from the reaction chamber 314, after completion, a substrate loading and unloading section 302 will connect # $ # $ t ^ Unload all the substrates, and upload the new substrates to the base 303. As mentioned above, according to this best practice, the setup is made with: ΓΤ rotating steam injection tube to achieve the process: Second, "when using a rotating steam injection tube," a rotating crystal holder can be used

The same effect. In the embodiment in which the wafer holder is rotated and the steam nozzle is fixed, the radio frequency tritium power source may be applied through the steam nozzle to stimulate the vapor substance in the reaction chamber to generate plasma. U take! 2 Use: When a small reaction chamber, the manufacturing equipment and method of the present invention are made in accordance with the preferred embodiment, making it possible for most substrates to enter ALD at the same time. In addition, since the vapor substances are all ejected from the rotating vapor injection pipe, the film is completed. Therefore, productivity and quality can be improved. _ Hook Those skilled in this technology should understand that various modifications and changes can be implemented in the method of manufacturing a thin film transistor of the invention without departing from the spirit and scope of the invention. Therefore, within the scope of the following patent applications and equivalent designs, the present invention intends to cover the correction methods and changes involved in the present invention.

Page 14 504738 Brief description of drawings Figure 1 shows a conceptual cross-sectional side view of a reaction chamber of an ALD device made according to the related art. FIG. 2 shows a repeated cycle diagram of an ald device made by supplying a vapor substance to the related art. Fig. 3 is a sectional side view showing a semiconductor device manufacturing apparatus according to a preferred embodiment of the present invention. Fig. 4 is a plan view showing a vapor supply portion in the semiconductor device manufacturing equipment according to the preferred embodiment of the present invention shown in Fig. 3; Fig. 5 is a longitudinal cross-sectional view showing the equipment of Fig. 3 & ^ manufacturing equipment of the present invention [semiconductor] [Symbol] (Fig. 1) 100 reaction chamber 102 reaction zone 11 0 a the lower part of the reaction chamber 110b Reaction chamber upper case 120 Carrying seat 130 Substrate 140 Spray hole 15 0 Exhaust hole (Figures 3, 4, 5) 300 Semiconductor device manufacturing equipment 3 0 2 Substrate receiving section 504738 Simple illustration of the drawing 3 0 3 Carrying seat 304 Reaction chamber 30 5 Steam supply pipe 30 6 Exhaust pipe 30 7 Hole openings 308a ~ d First to fourth steam injection pipes 310 Partition wall 312 Ring heater

314 base plate 316 position controller 320a ~ d reaction unit area

Page 16

Claims (1)

504738 6. Scope of patent application 1. An atomic layer deposition method, comprising: loading a plurality of substrates into a plurality of reaction unit regions, the plurality of reaction unit regions being arranged in a reaction chamber; and in an alternating and repeated manner Supplying various kinds of vapor substances to each substrate, so that a thin film can be formed on each substrate, in which a plurality of vapor ejection tubes each ejecting a single type of vapor substance are periodically scanned on each substrate, alternately and repeatedly Various kinds of vapor are supplied to each substrate. 2. · s The atomic layer deposition method according to item 1 of the scope of patent application, wherein each of the panels is heated by a heater arranged in the reaction chamber. Soil 3 · As stated in the atomic layer deposition method of item 1 of the patent scope, a (RF.) Power source is applied to the steam jet tube in the basin, so that the public can be in a chamber 2 4 · A semiconductor device manufacturing equipment, including: The compound bases have the same number of substrates; ‘. Then, all the substrates on the plurality of crystal bases are separated from the external environment by a gas injection tube, and the base gas substances are arranged on the substrates above the substrates; Each exhaust part is arranged in the corresponding crystal block. Page 17 刈 4738 In order to discharge the residual vapor in the reaction chamber. 5 Yu Yue said, please apply for the semiconductor device manufacturing equipment in item 4 of the patent, where the vertical distance between the steam jet tubes varies. At a glance, the semiconductor device manufacturing equipment in item 4 of the λΛ Lee range further includes heating. A plurality of ring heaters under the wafer seat are used to carry out the semiconductor device manufacturing equipment of the 7th-blue patent scope No. 4 of the patent base, and further include the base: i only r to separate each substrate to make it supplied to the substrate The "," and "negative" react only on the same substrate. For example, the semiconductor device manufacturing equipment of the $ range of the declared patent, wherein the plurality of crystal bases are fixed, and the plurality of vapor injection tubes are rotating. 9 · For example, the semiconductor device manufacturing equipment in the scope of patent application No. 8 further includes a position controller for controlling the rotation speed of a plurality of steam injection tubes. 10. For the semiconductor device manufacturing equipment in scope of the patent application No. 4, wherein ' The plurality of vapor injection tubes are fixed, and the plurality of crystal bases are rotating. Page 18 504738 6. Scope of patent application Contains a position controller for controlling the rotation speed of a plurality of crystal bases. 12. The semiconductor device manufacturing equipment according to item 10 of the patent application scope, wherein a radio frequency (RF) power source is applied to a plurality of vapor injection tubes to excite the vapor substance and generate plasma in a reaction chamber. Page 19