JP2004259905A - Reactor for vapor growth deposition - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To enable formation of a uniform film including no particles by preventing that particles are generated due to the flow of gas into a substrate transfer port within a reaction chamber and thereby uniform flow of gas at a cylindrical and linear nozzle is prevented. <P>SOLUTION: A transfer port cover (shielding means) 16 is attached in the side of reaction chamber 11 of a transfer gate valve 3 for separating a vacuum load lock chamber 4 and the reaction chamber 11. This transfer port cover 16 is operated vertically with an air cylinder 15 from an external side of the reaction chamber 11 through a transfer port cover holding rod 13 and a vacuum bellow flange 14. Moreover, since four net type members or hole opening members 17 are provided as the unifying means at the internal side of the nozzle of reactor, a uniform film can be formed with less particles. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a reactor for vapor phase growth used for supplying a gaseous CVD material to a semiconductor manufacturing apparatus to form a film, and more particularly, to an internal structure of a nozzle, a gas passage section, and a substrate transfer section. The present invention relates to an improved reactor for vapor phase growth.
[0002]
[Prior art]
2. Description of the Related Art In recent years, in a semiconductor manufacturing apparatus, a film formation method using a CVD (Chemical Vapor Deposition) method is an indispensable film formation method.
[0003]
FIG. 1 is a diagram showing an outline of a CVD apparatus used for general semiconductor manufacturing. In the CVD apparatus shown in FIG. 1, a reaction gas (one-component or multi-component material) introduced from a gas introduction port 1 is mixed and stirred in a gas mixer 2, and is passed through a gas introduction nozzle 10 by a substrate heater 7. A target film is deposited on the heated substrate 9 by spraying. The gas after the reaction diffuses into the reaction chamber 11 through a gap between the gas introduction nozzle 10 and the substrate 9 and is exhausted from the vacuum exhaust port 8.
[0004]
FIG. 2 is a view showing a CVD apparatus having a structure different from that of a gas introduction nozzle. Similarly, the CVD apparatus of FIG. 2 sprays a reaction gas (one-component or multi-component material) introduced from the gas inlet 1 through the gas shower nozzle 12 onto the substrate 9 heated by the substrate heater 7. A target film is deposited on the substrate 9. The reason why the gas mixing portion is not provided in the apparatus shown in FIG. 2 is that mixing is performed at the gas shower nozzle 12 and is unnecessary. The gas after the reaction is similarly diffused into the reaction chamber 11 from the gap between the nozzle 12 and the substrate 9 and is exhausted from the vacuum exhaust port 8.
In FIGS. 1 and 2, when the substrate 9 is placed, the reaction chamber 11 must be opened to the atmosphere.
[0005]
3 and 4 are views showing a CVD apparatus with a vacuum load lock chamber used for mass production. The substrate 9 is set on the transfer arm 6 in the vacuum load lock chamber 4. After the vacuum load lock chamber 4 is evacuated from the vacuum exhaust port 8, the transfer gate valve 3 is opened, and the vacuum load lock chamber 4 is transferred onto the substrate heater 7 in the reaction chamber 11. After the film formation is completed, on the contrary, the substrate 9 is transferred from above the substrate heater 7 into the vacuum load lock chamber 4 by the transfer arm 6, the transfer gate valve 3 is closed, and the vacuum load lock chamber 4 is set to the atmospheric pressure. And the substrate 9 is taken out (for example, Patent Document 1).
[0006]
[Patent Document 1]
JP 2001-068470 A
[Problems to be solved by the invention]
The above-described conventional reactor for vapor phase growth has an internal structure as shown in FIGS. 1 to 4, and the port of the substrate transfer section is indispensable for the transfer.
However, due to the tubular structure, gas containing unreacted gas that has passed over the substrate flows in and stays there, and due to this stay, unreacted substances float in the form of particles, or on the wall surface where there is no unreacted matter. Thus, the reaction product adheres to the inner wall surface and separates and floats with time, and eventually, these are deposited on the substrate, which is a cause of inhibiting uniform film formation.
[0008]
On the other hand, the gas nozzle is for guiding the reaction gas onto the substrate, and has a simple cylindrical structure, so that only the relationship between the nozzle and the substrate as parameters and the relationship between the nozzle diameter and the substrate size are used. Then, it was difficult to obtain uniformity of the film thickness and device characteristics when forming a film on a substrate having a larger shape.
[0009]
An object of the present invention is to provide a reactor for vapor phase growth that can ensure uniform film formation and uniformity of film thickness and device characteristics.
[0010]
[Means for Solving the Problems]
In order to solve the above-mentioned problem, the invention of claim 1 is directed to a reactor for vapor phase growth of a CVD apparatus for forming a film by bubbling a liquid source or transporting a vapor or a gas source of the liquid source as it is. A vapor phase growth reactor characterized in that shielding means for preventing gas from flowing into a transfer port is provided.
[0011]
According to a second aspect of the present invention, in a vapor phase growth reactor of a CVD apparatus for bubbling a liquid raw material or transporting a vapor or a gas raw material of a liquid raw material as it is to form a film, a reactive gas is supplied in the middle of a nozzle. This is a reactor for vapor phase growth, provided with a homogenizing means for homogenizing.
[0012]
According to a third aspect of the present invention, in the reactor for vapor phase growth according to the second aspect, the uniformizing means includes one or a plurality of mesh members and / or perforated members. A reactor for vapor phase growth, characterized in that:
[0013]
According to a fourth aspect of the present invention, in the reactor for vapor phase growth according to the third aspect, the homogenizing means includes a mesh member having a relatively different roughness or a hole having a different hole diameter or a different number of holes. A reactor for vapor phase growth characterized by combining a plurality of open members, respectively.
[0014]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described in more detail with reference to the drawings and the like.
[First Embodiment]
1 and 2 are views showing a first embodiment of a reactor for vapor phase growth according to the present invention. In the embodiments described below, portions performing the same functions as those in the conventional example described above are denoted by the same reference numerals, and description thereof will be omitted as appropriate.
In the apparatus of the first embodiment, a transfer port cover (shielding means) 16 is attached to the reaction chamber 11 side of the transfer gate valve 3 for separating the vacuum load lock chamber 4 and the reaction chamber 11.
The transfer port cover 16 is moved up and down by an air cylinder 15 from outside the reaction chamber 11 via the transfer port cover holding rod 13 and the vacuum bellows flange 14.
[0015]
The timing at which the transfer port cover 16 is operated is linked to the transfer gate valve 3 and moves down to the lower side where the substrate transfer is not hindered during the transfer of the substrate, as shown in FIG. In other states, the state always covers the transport port (the state in FIG. 5).
Of course, the purpose of the present invention is to avoid the entrainment of gas at the time of film formation, and it is sufficient if the state of FIG. 5 is at the time of film formation. Even in a state where gas flows from the gas inlet 1 (for example, in a nitrogen purge state), it is desirable that the transfer port should be covered (the state shown in FIG. 5). It is best to stay in state.
[0016]
According to the first embodiment, this portion can be covered with a cover 16 provided with a mechanism that does not disturb the transfer in the vicinity of the transfer gate entrance of the reactor, and the reaction gas is difficult to flow into. Attaching the cover 16 enabled uniform film formation in an environment where no particles or the like are generated.
[0017]
(Example 1)
In the first embodiment, a 4 inch φ silicon (100) substrate 9 is transported from the vacuum load lock chamber 4, and the substrate 9 is placed on the substrate heater 7. Is covered.
In this state, the inside of the reaction chamber 11 was evacuated with a dry pump and a mechanical booster pump until the pressure reached 0.1 Torr or less, which is the ultimate degree of vacuum. Next, while pumping N ₂ : 530 sccm and O ₂ : 530 sccm into the reaction chamber 11, the pumping amount is adjusted so that the pressure becomes 5 torr.
In order to increase the temperature of the substrate 9, the temperature of the substrate heater 7 was set to 650 ° C., and the temperature was stabilized.
At the same time, 0.2 g / min of di (2,2,6,6 tetramethyl 3,5 heptanedionite) lead [Pb (DPM) ₂ ], which is a raw material gas for producing a PZT film, 0.1 g / min of 2,6 dimethyl 3,5 heptadinite) zirconium [Zr (DMHD) ₄ ] and di (2,2,6,6-tetramethyl 3,5 heptane dionite) di (isopropoxide ) Titanium [Ti (iPrO) ₂ (DPM) ₂ ], 0.1 g / min, and then dry gas N ₂ : 450 sccm, O ₂ : 530 sccm are flowed through the bypass while the supply is stable. .
When the temperature of the substrate has become sufficiently constant, the three kinds of source gas and the two kinds of dry gas that have been flowing through the bypass are switched and flow into the reaction chamber 11 is started.
After about 60 minutes, the raw material gas was switched, and a gas of N ₂ : 530 sccm and O ₂ : 530 sccm was flowed for a while. After confirming that the raw material disappeared from the reaction chamber 11, the dry gas was stopped and the reaction chamber 11 was stopped. The inside is pumped down to the ultimate vacuum. Thereafter, the power of the heater 7 is turned off, and the substrate temperature is lowered. After the substrate temperature was sufficiently lowered, the substrate 9 was transported and taken out, and the state of adhesion of particles on the surface of the substrate 9 was observed.
Similarly, a film with less particles was produced as compared with a film produced without the transport port cover 16.
[0018]
[Second embodiment]
FIG. 7 is a view showing a second embodiment of the reactor for vapor phase growth according to the present invention.
The reactor of the second embodiment has four mesh members or perforated members 17 arranged inside the nozzle of the reactor of the first embodiment (uniformizing means).
[0019]
The mesh members or perforated members 17 were arranged such that the positions of the meshes and holes did not overlap each other. The reason for this is that if they are arranged at the same position, even if the meshes and holes are different, the amount of gas that passes straight increases, and the effect is reduced.
[0020]
According to the second embodiment, in the gas nozzle, by arranging one or a plurality of mesh members or perforated members in the middle of the gas nozzle, the film thickness or the film characteristics are significantly more uniform than in the case where the gas nozzle is not provided. It has become possible to improve the performance.
[0021]
(Example 2)
In Example 2, two mesh members 17 were 14 mesh, and the other two were 60 mesh, and were arranged in the order of 14 mesh, 60 mesh, 14 mesh, and 60 mesh from the top.
Since the roughness, order, required number, and the like of these meshes naturally depend on the film forming conditions, it is necessary to always select optimal conditions.
A PZT film was formed on the substrate 9 by flowing a gas in the same procedure as in Example 1 and under the same film forming conditions. When the uniformity of the film thickness and the composition ratio of lead, zirconium, titanium, and oxygen was measured by a fluorescent X-ray analysis method, the uniformity was increased as compared with the case where the mesh member 17 was not provided in the nozzle. Was confirmed.
[0022]
(Example 3)
In the third embodiment, the perforated member 17 has four perforated plates instead of the mesh of the second embodiment.
The positions of the holes were arranged so as not to overlap each other. The reason for this is that if the holes are arranged at the same position, even if the holes have different diameters, the amount of gas passing straight through increases and the effect is reduced.
In Example 3, two holes had a diameter of 1 mm and the remaining two had a diameter of 0.5 mm, and were arranged in the order of 1 mm, 0.5 mm, 1 mm, and 0.5 mm from the top. The number and density of the holes were both 4 / cm ² .
The hole diameter, the order, the number of sheets, and the like naturally differ depending on the film forming conditions, and thus it is necessary to always select the optimum conditions. In Example 3, film formation was performed under these conditions.
A PZT film was formed on the substrate 9 by flowing gas under the same procedure as in Example 1 and under the same film forming conditions. When the film thickness and the uniformity of the composition ratio of lead, zirconium, titanium, and oxygen of the film manufactured in Example 3 were measured by the fluorescent X-ray analysis method, the film was more uniform than when the mesh member 17 was not provided in the nozzle. It was confirmed that the nature was increasing.
[0023]
(Example 4)
In Example 2 and Example 3, the mesh member or the perforated member 17 was used separately, but in Example 4, each was alternately arranged at four positions.
In Example 4, two holes having a hole diameter of the perforated member 17 were 0.5 mm, and the remaining two mesh members 17 were 60 mesh. From the top, 60 mesh, 0.5 mm, 60 mesh, and 0.5 mm in this order. Placed. The number density of the holes was 4 / cm ² . Since the hole diameter, order, number of sheets, and the like, or the number of each of the mesh member and the perforated member 17 differ depending on the film forming conditions, it is necessary to always select the optimum conditions. In Example 4, film formation was performed under these conditions.
A gas was flowed in the same procedure as in Example 1 under the same film forming conditions, and a PZT film was formed on the substrate.
When the uniformity of the film thickness and the composition ratio of lead, zirconium, titanium, and oxygen of the film manufactured in Example 4 was measured by the fluorescent X-ray analysis method, the film was more uniform than when the mesh member 17 was not provided in the nozzle. It was confirmed that the nature was increasing.
[0024]
In any of the examples, these combinations complement the effects and do not prevent the effects, and it is clear that the effects of the present invention can be confirmed in any combination.
[0025]
【The invention's effect】
As described above in detail, according to the present invention, by providing the substrate transfer port with the shielding means, the gas does not flow into the substrate transfer port, so that the generation of particles due to the reaction gas flowing into the substrate transfer port is reduced. Can be held down. Also, the gas flow becomes uniform.
[0026]
Further, by providing a uniformizing means such as a mesh, a mesh member or a perforated member in the nozzle, the reaction gas flowing in the nozzle is diffused and mixed by the uniformizing means, thereby improving the radial distribution of the gas flow. Is done.
As described above, by these effects, a uniform film without particles can be manufactured.
[Brief description of the drawings]
FIG.
It is sectional drawing which shows the batch type reactor chamber which used the nozzle for the gas introduction part generally used.
FIG. 2 is a cross-sectional view showing a batch-type reactor chamber using a shower plate as a generally used gas inlet.
FIG. 3 is a cross-sectional view showing a vacuum load-lock type reactor chamber using a nozzle as a gas introduction part which is generally used.
FIG. 4 is a cross-sectional view showing a vacuum load-lock type batch reactor chamber using a shower plate as a gas introduction part which is generally used.
FIG. 5 is a cross-sectional view of a reactor chamber showing a first embodiment of the vapor phase growth reactor according to the present invention (a state in which a transfer port cover is located above and covers the transfer port).
FIG. 6 is a cross-sectional view of a reactor chamber showing a first embodiment of the vapor phase growth reactor according to the present invention (a state in which a transfer port cover is located below and does not cover a transfer port).
FIG. 7 is a reactor chamber showing a second embodiment of the vapor-phase growth reactor according to the present invention (a state in which a transport port cover is located above and covers a transport port, and a homogenizing means is arranged in a nozzle). FIG.
[Explanation of symbols]
1. Gas inlet 2. Gas mixer3. 3. Transfer gate valve Vacuum load lock chamber5. Transfer robot 6. 6. Transfer arm 7. substrate heater Vacuum exhaust port 9. Substrate 10. Gas introduction nozzle 11. Reaction chamber chamber 12. Gas shower nozzle 13. 13. Transport port cover holding rod Vacuum bellow flange15. Air cylinder 16. Transport port cover 17. Reticulated member (or perforated member)

Claims (4)

In a reactor for vapor phase growth of a CVD apparatus for bubbling a liquid source, or for transporting a vapor or a gas source of the liquid source as it is to form a film,
A reactor for vapor phase growth, comprising a shielding means for preventing gas from flowing into a substrate transfer port. In a reactor for vapor phase growth of a CVD apparatus for bubbling a liquid source, or for transporting a vapor or a gas source of the liquid source as it is to form a film,
A reactor for vapor phase growth, wherein a uniformizing means for homogenizing a reaction gas is provided in the middle of a nozzle. The reactor for vapor phase growth according to claim 2,
The reactor for vapor phase growth is characterized in that the homogenizing means comprises one or more net-like members and / or perforated members. The reactor for vapor phase growth according to claim 3,
The uniformizing means is a combination of a plurality of mesh-like members having relatively different roughnesses, or members having holes having different hole diameters or the number of holes, for vapor phase growth. Reactor.

Images