KR100386361B1 - Antistatic adhesives and manufacturing method of the same - Google Patents
Antistatic adhesives and manufacturing method of the same Download PDFInfo
- Publication number
- KR100386361B1 KR100386361B1 KR10-2000-0076241A KR20000076241A KR100386361B1 KR 100386361 B1 KR100386361 B1 KR 100386361B1 KR 20000076241 A KR20000076241 A KR 20000076241A KR 100386361 B1 KR100386361 B1 KR 100386361B1
- Authority
- KR
- South Korea
- Prior art keywords
- methyl
- antistatic
- ethyl
- oligomer
- diisocyanate
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000000853 adhesive Substances 0.000 title abstract description 40
- 230000001070 adhesive effect Effects 0.000 title abstract description 40
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims abstract description 30
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims abstract description 20
- 150000003242 quaternary ammonium salts Chemical class 0.000 claims abstract description 19
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 12
- 239000001257 hydrogen Substances 0.000 claims abstract description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical class [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 8
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims abstract description 7
- 125000005641 methacryl group Chemical group 0.000 claims abstract description 5
- 150000002431 hydrogen Chemical class 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 22
- -1 secondary amine compound Chemical class 0.000 claims description 20
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims description 14
- 239000000178 monomer Substances 0.000 claims description 11
- 150000003141 primary amines Chemical class 0.000 claims description 8
- QZPSOSOOLFHYRR-UHFFFAOYSA-N 3-hydroxypropyl prop-2-enoate Chemical compound OCCCOC(=O)C=C QZPSOSOOLFHYRR-UHFFFAOYSA-N 0.000 claims description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 claims description 6
- 230000000269 nucleophilic effect Effects 0.000 claims description 6
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical group NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 5
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 claims description 5
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims description 4
- 125000004386 diacrylate group Chemical group 0.000 claims description 4
- JXTHNDFMNIQAHM-UHFFFAOYSA-N dichloroacetic acid Chemical compound OC(=O)C(Cl)Cl JXTHNDFMNIQAHM-UHFFFAOYSA-N 0.000 claims description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 150000003335 secondary amines Chemical class 0.000 claims description 4
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 claims description 4
- MYWOJODOMFBVCB-UHFFFAOYSA-N 1,2,6-trimethylphenanthrene Chemical compound CC1=CC=C2C3=CC(C)=CC=C3C=CC2=C1C MYWOJODOMFBVCB-UHFFFAOYSA-N 0.000 claims description 3
- 239000005057 Hexamethylene diisocyanate Substances 0.000 claims description 3
- 239000005058 Isophorone diisocyanate Substances 0.000 claims description 3
- 239000002202 Polyethylene glycol Substances 0.000 claims description 3
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 claims description 3
- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 claims description 3
- 150000007522 mineralic acids Chemical class 0.000 claims description 3
- 150000007524 organic acids Chemical group 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- 230000002194 synthesizing effect Effects 0.000 claims description 3
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical group CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 claims description 3
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 claims description 2
- KODLUXHSIZOKTG-UHFFFAOYSA-N 1-aminobutan-2-ol Chemical compound CCC(O)CN KODLUXHSIZOKTG-UHFFFAOYSA-N 0.000 claims description 2
- LFSYUSUFCBOHGU-UHFFFAOYSA-N 1-isocyanato-2-[(4-isocyanatophenyl)methyl]benzene Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=CC=C1N=C=O LFSYUSUFCBOHGU-UHFFFAOYSA-N 0.000 claims description 2
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 claims description 2
- WVRHNZGZWMKMNE-UHFFFAOYSA-N 2-hydroxy-1-[2-(2-methylpropyl)phenyl]-2-phenylethanone Chemical compound CC(C)CC1=CC=CC=C1C(=O)C(O)C1=CC=CC=C1 WVRHNZGZWMKMNE-UHFFFAOYSA-N 0.000 claims description 2
- NACPTFCBIGBTSJ-UHFFFAOYSA-N 2-hydroxy-2-phenyl-1-(2-propan-2-ylphenyl)ethanone Chemical group CC(C)C1=CC=CC=C1C(=O)C(O)C1=CC=CC=C1 NACPTFCBIGBTSJ-UHFFFAOYSA-N 0.000 claims description 2
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 claims description 2
- JHWGFJBTMHEZME-UHFFFAOYSA-N 4-prop-2-enoyloxybutyl prop-2-enoate Chemical compound C=CC(=O)OCCCCOC(=O)C=C JHWGFJBTMHEZME-UHFFFAOYSA-N 0.000 claims description 2
- KIWBPDUYBMNFTB-UHFFFAOYSA-N Ethyl hydrogen sulfate Chemical compound CCOS(O)(=O)=O KIWBPDUYBMNFTB-UHFFFAOYSA-N 0.000 claims description 2
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical group C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 claims description 2
- INXWLSDYDXPENO-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(CO)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C INXWLSDYDXPENO-UHFFFAOYSA-N 0.000 claims description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims description 2
- FOCAUTSVDIKZOP-UHFFFAOYSA-N chloroacetic acid Chemical compound OC(=O)CCl FOCAUTSVDIKZOP-UHFFFAOYSA-N 0.000 claims description 2
- 229960005215 dichloroacetic acid Drugs 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- 239000012948 isocyanate Substances 0.000 claims description 2
- 150000002576 ketones Chemical class 0.000 claims description 2
- JZMJDSHXVKJFKW-UHFFFAOYSA-M methyl sulfate(1-) Chemical compound COS([O-])(=O)=O JZMJDSHXVKJFKW-UHFFFAOYSA-M 0.000 claims description 2
- 229950004864 olamine Drugs 0.000 claims description 2
- 235000005985 organic acids Nutrition 0.000 claims description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 2
- YNJBWRMUSHSURL-UHFFFAOYSA-N trichloroacetic acid Chemical compound OC(=O)C(Cl)(Cl)Cl YNJBWRMUSHSURL-UHFFFAOYSA-N 0.000 claims description 2
- 239000013638 trimer Substances 0.000 claims description 2
- KQIXMZWXFFHRAQ-UHFFFAOYSA-N 1-(2-hydroxybutylamino)butan-2-ol Chemical compound CCC(O)CNCC(O)CC KQIXMZWXFFHRAQ-UHFFFAOYSA-N 0.000 claims 1
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 claims 1
- GZBSIABKXVPBFY-UHFFFAOYSA-N 2,2-bis(hydroxymethyl)propane-1,3-diol;prop-2-enoic acid Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCC(CO)(CO)CO GZBSIABKXVPBFY-UHFFFAOYSA-N 0.000 claims 1
- ZMEAEUNNMHQAJK-UHFFFAOYSA-N 2-[3-[3-[2,2-diphenylethyl-[(4-methoxyphenyl)methyl]amino]propoxy]phenyl]acetamide Chemical compound C1=CC(OC)=CC=C1CN(CC(C=1C=CC=CC=1)C=1C=CC=CC=1)CCCOC1=CC=CC(CC(N)=O)=C1 ZMEAEUNNMHQAJK-UHFFFAOYSA-N 0.000 claims 1
- GWGWXYUPRTXVSY-UHFFFAOYSA-N N=C=O.N=C=O.CC1=CC=C(C)C=C1 Chemical compound N=C=O.N=C=O.CC1=CC=C(C)C=C1 GWGWXYUPRTXVSY-UHFFFAOYSA-N 0.000 claims 1
- UQBRAHLFLCMLBA-UHFFFAOYSA-N N=C=O.N=C=O.CC1=CC=CC(C)=C1 Chemical compound N=C=O.N=C=O.CC1=CC=CC(C)=C1 UQBRAHLFLCMLBA-UHFFFAOYSA-N 0.000 claims 1
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 claims 1
- BTZNPZMHENLISZ-UHFFFAOYSA-N fluoromethanesulfonic acid Chemical compound OS(=O)(=O)CF BTZNPZMHENLISZ-UHFFFAOYSA-N 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 15
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 230000003068 static effect Effects 0.000 description 7
- 238000003756 stirring Methods 0.000 description 7
- 230000005611 electricity Effects 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- 239000004743 Polypropylene Substances 0.000 description 4
- 239000002390 adhesive tape Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229920001155 polypropylene Polymers 0.000 description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- DXPPIEDUBFUSEZ-UHFFFAOYSA-N 6-methylheptyl prop-2-enoate Chemical compound CC(C)CCCCCOC(=O)C=C DXPPIEDUBFUSEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 239000001993 wax Substances 0.000 description 2
- ONSBOKRDVPIUNQ-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C(C1=CC=CC=C1)(=O)C1(CCCCC1)O.C(C1=CC=CC=C1)(=O)C1(CCCCC1)O ONSBOKRDVPIUNQ-UHFFFAOYSA-N 0.000 description 1
- BWZAUXRKSMJLMH-UHFFFAOYSA-N 1,1-diethoxyethylbenzene Chemical compound CCOC(C)(OCC)C1=CC=CC=C1 BWZAUXRKSMJLMH-UHFFFAOYSA-N 0.000 description 1
- LMAUULKNZLEMGN-UHFFFAOYSA-N 1-ethyl-3,5-dimethylbenzene Chemical compound CCC1=CC(C)=CC(C)=C1 LMAUULKNZLEMGN-UHFFFAOYSA-N 0.000 description 1
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 1
- 239000012957 2-hydroxy-2-methyl-1-phenylpropanone Substances 0.000 description 1
- FEWFXBUNENSNBQ-UHFFFAOYSA-N 2-hydroxyacrylic acid Chemical compound OC(=C)C(O)=O FEWFXBUNENSNBQ-UHFFFAOYSA-N 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- NCTBYWFEJFTVEL-UHFFFAOYSA-N 2-methylbutyl prop-2-enoate Chemical compound CCC(C)COC(=O)C=C NCTBYWFEJFTVEL-UHFFFAOYSA-N 0.000 description 1
- ZVYGIPWYVVJFRW-UHFFFAOYSA-N 3-methylbutyl prop-2-enoate Chemical compound CC(C)CCOC(=O)C=C ZVYGIPWYVVJFRW-UHFFFAOYSA-N 0.000 description 1
- JSZCJJRQCFZXCI-UHFFFAOYSA-N 6-prop-2-enoyloxyhexanoic acid Chemical compound OC(=O)CCCCCOC(=O)C=C JSZCJJRQCFZXCI-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- UUEDUANGADTOKM-UHFFFAOYSA-N CC1=CC(C)=CC=C1.N=C=O.N=C=O.N=C=O Chemical compound CC1=CC(C)=CC=C1.N=C=O.N=C=O.N=C=O UUEDUANGADTOKM-UHFFFAOYSA-N 0.000 description 1
- JBKVHLHDHHXQEQ-UHFFFAOYSA-N Caprolactam Natural products O=C1CCCCCN1 JBKVHLHDHHXQEQ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 1
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- VYGUBTIWNBFFMQ-UHFFFAOYSA-N [N+](#[C-])N1C(=O)NC=2NC(=O)NC2C1=O Chemical compound [N+](#[C-])N1C(=O)NC=2NC(=O)NC2C1=O VYGUBTIWNBFFMQ-UHFFFAOYSA-N 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- VENJJOGQEGHFPI-UHFFFAOYSA-N butyl prop-2-enoate;2-methylidenehexanoic acid Chemical compound CCCCOC(=O)C=C.CCCCC(=C)C(O)=O VENJJOGQEGHFPI-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- XXKOQQBKBHUATC-UHFFFAOYSA-N cyclohexylmethylcyclohexane Chemical compound C1CCCCC1CC1CCCCC1 XXKOQQBKBHUATC-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- KORSJDCBLAPZEQ-UHFFFAOYSA-N dicyclohexylmethane-4,4'-diisocyanate Chemical compound C1CC(N=C=O)CCC1CC1CCC(N=C=O)CC1 KORSJDCBLAPZEQ-UHFFFAOYSA-N 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- LNMQRPPRQDGUDR-UHFFFAOYSA-N hexyl prop-2-enoate Chemical compound CCCCCCOC(=O)C=C LNMQRPPRQDGUDR-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- IVSZLXZYQVIEFR-UHFFFAOYSA-N m-xylene Chemical group CC1=CC=CC(C)=C1 IVSZLXZYQVIEFR-UHFFFAOYSA-N 0.000 description 1
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/17—Amines; Quaternary ammonium compounds
- C08K5/19—Quaternary ammonium compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
- C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09J133/08—Homopolymers or copolymers of acrylic acid esters
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
본 발명은 4급 암모늄염을 함유하는 대전방지 저중합체, 이를 함유하는 대전방지 점착제 및 그 제조방법을 제공한다. 본 발명에 따른 4급 암모늄염을 함유하는 대전방지 저중합체는 다음 화학식 1로 표시되는 4급 암모늄염을 함유하며, 우수한 대전방지 기능을 가지고 점착제를 띨 때 잔류물이 남지 않는다.The present invention provides an antistatic oligomer containing a quaternary ammonium salt, an antistatic adhesive containing the same, and a method of manufacturing the same. The antistatic oligomer containing the quaternary ammonium salt according to the present invention contains a quaternary ammonium salt represented by the following formula (1), and has an excellent antistatic function and leaves no residue when the adhesive is applied.
(상기 식에서,(Wherein
, ,
, ,
이며, Is,
R1은 수소, 아크릴기 또는 메타크릴기, R2는 수소, 메틸, 또는 에틸기, R3는 수소 또는 메틸기, X는 CH3OSO3, CH3CH2OSO3, CCl3COO, CF3COO, CH3C6H5SO3, H2PO4, HCl이며, n은 2-12의 정수이다)R 1 is hydrogen, acrylic or methacryl group, R 2 is hydrogen, methyl, or ethyl group, R 3 is hydrogen or methyl group, X is CH 3 OSO 3 , CH 3 CH 2 OSO 3 , CCl 3 COO, CF 3 COO , CH 3 C 6 H 5 SO 3 , H 2 PO 4 , HCl, n is an integer from 2-12)
Description
본 발명은 대전방지 점착제에 관한 것이며, 보다 상세하게는 우수한 대전방지 기능을 가지고, 점착제를 띨 때 잔류물이 남지 않는 점착제에 관한 것이다.The present invention relates to an antistatic adhesive, and more particularly to an adhesive having an excellent antistatic function and leaving no residue when the adhesive is squeezed out.
20 세기 후반과 21 세기에 이르러 산업구조가 정보화 산업으로 변화함에 따라 각 전자부품은 소형 박리화의 경향을 띄게 되었으며, 이에 따라 작은 면적의 IC 칩에 많은 회로를 만들어야 하는 미세화 공정이 발달하고 있으며, 회로의 소형화에 따라 오염을 유발하는 먼지등의 오염물질 등에 의한 생산 효율의 감소를 위한 많은 노력을 하고 있다.In the late 20th and 21st centuries, as the industrial structure changed to the information technology industry, each electronic component tended to be miniaturized, and accordingly, the miniaturization process that requires the production of many circuits in a small area IC chip has been developed. With the miniaturization of circuits, many efforts have been made to reduce the production efficiency caused by pollutants such as dust, which causes pollution.
또한 최근에는 정보산업의 발달에 따른 반도체 제조기술의 진보로 한 개의 작은 칩(chip)에 많은 회로 소자를 넣어야 하는 회로의 집적도 증가에 따른 오염을 방지하기 위한 노력이 증가되고 있다.Recently, due to advances in the semiconductor manufacturing technology with the development of the information industry, efforts have been made to prevent contamination due to an increase in the degree of integration of circuits, in which many circuit elements must be put in one small chip.
이러한 오염을 방지하기 위하여 1,000 클래스(class) 정도의 청정실(clean room)을 이용하고 있지만, 반도체 제조공정상에서 발생되는 정전기에 대한 대책은미비한 실정이며, 더욱 품질검사된 완성된 반도체 제품의 정보를 외부에 알려주기 위한 라벨링 작업에서 생기는 정전기를 제거할 수 있는 방법은 없었다.In order to prevent such contamination, a clean class of about 1,000 classes is used, but countermeasures against static electricity generated in the semiconductor manufacturing process are insufficient. There was no way to remove the static electricity from the labeling process.
일반적으로, 정전기로부터 민감한 반응을 보이는 반도체 소자들에 대해서는 소위 전기방전 민감품목(ESD sensitive items)으로 규정하고, 제품의 생산에서 사후 관리까지 주의를 요구하고 있다. 예를 들어, 용매형이나 에멀젼 점착제를 사용한 라벨에서 발생되는 정전압은 100,000 V에서 수천 V로, 이는 전기방전 민감품목의 1등급 수준인 0 < 민감도 < 1,000 V 이상이 되므로 최저 50 V 정도의 정전압으로 유지되어야 되는 고밀도 반도체 소자들은 여러 가지 손상을 입게 된다.In general, semiconductor devices that exhibit sensitive reactions from static electricity are defined as so-called ESD sensitive items and require attention from production to after-care. For example, the static voltage generated from a label using a solvent type or an emulsion adhesive is 100,000 V to thousands of V, which is a constant voltage of at least 50 V since it becomes 0 <sensitivity <1,000 V or more, which is a level 1 level of the electric discharge sensitive items. High-density semiconductor devices that must be maintained are subject to various damages.
반도체 제조공정에서 사용되는 점착 테이프중 반 고정용으로 사용되는 테이프로는, 웨이퍼 다이싱, 연마용, 전자부품 제조공정상에서 사용하는 약 점착 테이프, UV 경화형 테이프, 가열 박리 테이프 등이 있으며, 종래의 반도체 공정에서는 웨이퍼의 가공시 고정하기 위하여 왁스를 많이 사용하였으나, 가공후 왁스의 세정 제거시 사용하는 유기용제가 환경에 나쁜 영향을 주기 때문에 최근에는 유기 용제 세정제 사용을 회피하고 점착 테이프의 사용이 확대되고 있다.Among the adhesive tapes used in the semiconductor manufacturing process, tapes used for semi-fixing include wafer adhesive dicing, polishing, weak adhesive tapes used in electronic component manufacturing processes, UV curable tapes, and heat peeling tapes. In the semiconductor process, many waxes are used to fix wafers. However, since organic solvents used to clean and remove waxes after processing adversely affect the environment, in recent years, the use of organic solvent cleaners has been avoided and the use of adhesive tapes has been expanded. It is becoming.
또한 직접회로(integrated circuit)가 만들어진 실리콘과 갈륨-비소 같은 반도체 재료의 웨이퍼는 200 mm 정도 크기의 지름을 가지고 있으며, IC 칩의 생산공정에서 이러한 큰 웨이퍼는 다이싱 테이프라고 불리우는 점착 테이프에 고정시켜 작게 절단한 후, 다이싱 테이프에서 떼어낸(release, picking up)후 리드 프레임에 붙히게 된다. 즉, 이러한 반도체 제조공정에서 사용되는 점착제품 중에서 다이싱 (dicing) 테이프는 집적회로가 형성된 웨이퍼를 다이아몬드 톱으로 다수의 IC 칩으로 자르는 절단(sawing)공정에서 웨이퍼의 고정, 운반 등의 역할로 사용되고 있다.In addition, wafers of semiconductor materials such as silicon and gallium-arsenide, in which integrated circuits are made, have a diameter of about 200 mm, and in the production process of IC chips, these large wafers are fixed to an adhesive tape called dicing tape. After a small cut, they are released from the dicing tape and released to the lead frame. In other words, the dicing tape among the adhesive products used in the semiconductor manufacturing process is used for fixing and transporting the wafer in the sawing process of cutting the wafer on which the integrated circuit is formed into a plurality of IC chips with a diamond saw. have.
이러한 웨이퍼의 제조 기술에서 사용하는 다이싱 테이프는 웨이퍼를 IC 칩으로 작게 자르는 과정에서는 반도체 웨이퍼와 강한 점착력을 가져야 하며, 작은 IC를 떼어내는 단계에서는 IC 칩과의 점착력이 감소되어야 하며, 또한 IC 칩은 다이싱 테이프로부터 점착제의 잔류물이 묻지 않고 바로 떼어져야 하는 양면성을 가져야 한다. 또한 이러한 웨이퍼는 미세한 전자회로가 만들어져 있기 때문에 떼어질 때의 박리에서 생기는 정전기는 50∼100 V 미만의 매우 약한 정전기를 띄어야 하며, 떼어질 때 50 V 미만의 정전기를 띄게 하기 위해서는 점착제의 표면저항이 적어도 107Ω/㎤ 을 나타내어야 한다. 즉, 이러한 다이싱 테이프는 단순한 점착기능 뿐만 아니라, 붙히고 띨 때 기재위에 잔류물이 남지 않아야 하는 잔류물 제거(no removal residue) 기능과 대전방지(antistatic) 기능이 필수적이다. The dicing tape used in the wafer manufacturing technology should have strong adhesive force with the semiconductor wafer in the process of cutting the wafer into IC chips, and the adhesive force with the IC chip should be reduced in the step of removing the small IC. The silver should have a double-sided property that should be removed immediately from the dicing tape without leaving any residue of the adhesive. In addition, since these wafers are made of fine electronic circuits, the static electricity generated from peeling when peeled off should have a very weak static electricity of less than 50 to 100 V, and the surface resistance of the adhesive to bring out static electricity of less than 50 V when peeled off. This at least 107Ω / cm 3. In other words, these dicing tapes not only have a simple adhesive function, but also have no residue on the substrate when they are attached and removed. No removal residue and antistatic functions are essential.
그러나, 종래의 다이싱 테이프는 대전방지 기능이 충분하지 못하여 칩을 픽업할 때 많은 정전압(tribocharge)이 발생하여 칩의 불량요인이 발생하며, 또한 점착력을 유지하지 못하거나, 점착후에 잔류물이 칩의 뒷면에 묻어 있어 공정중에 많은 불량을 야기시킨다.However, conventional dicing tapes do not have sufficient antistatic function, which leads to chip removal. When picking up Many tribocharges occur, causing chip defects and failing to maintain adhesion, or after adhesion, residues on the back of the chip cause many defects during the process.
한편 칩 제조공정상 웨이퍼의 대전이 원인이 되어 제조공정중 불량이 많이 발생하고, 웨이퍼 지지체가 절연체인 경우 전하를 막는 원인이 된다. 또한 제조장치, 여러 가지 절연체, 반송용 콘테이너 등의 대전 역시 제조공정의 불량을 야기시킨다.On the other hand, in the chip manufacturing process, the charging of the wafer is a cause, and a lot of defects occur during the manufacturing process, and when the wafer support is an insulator, it causes a charge blocking. In addition, charging of a manufacturing apparatus, various insulators, and a conveying container also causes a defect in the manufacturing process.
일반적으로 대전면에는 그 전하와 반대되는 극성으로 대전한 입자가 부착이 되며, 웨이퍼가 대전되면 공기내에 부유하는 에어로졸 입자가 부착되기 쉬워진다. 이와 같은 먼지의 부착은 소자의 불량 또는 내압의 저하등의 장해를 일으킨다. 상기 웨이퍼의 대전은 초순수에 의한 세정, 다이싱 등에서도 일어나며, 초순수 세정에서는 물의 저항값이 높아짐에 따라 대전량이 증가된다.Generally, the charged surface adheres to particles charged with the opposite polarity to that of the charge. When the wafer is charged, the aerosol particles floating in the air easily adhere to the charged surface. Such adhesion of dust causes a failure such as a failure of the device or a decrease in the internal pressure. The charging of the wafer also occurs in ultrapure water cleaning, dicing, and the like. In ultrapure water cleaning, the amount of charge increases as the resistance value of water increases.
따라서, 이러한 문제점을 해결하기 위하여 점착 성분에 대전방지 효과를 유지하기 위하여 많은 노력들을 하고 있으며, 일반적인 점착 배합에 전기적으로 도전성이 있는 금속분말이나 탄소 입자 같은 전도성 성분을 갖는 물질을 첨가하는 방법, 정전기의 발생을 감소시키기 위하여 이온성 물질을 첨가하는 방법, 금속증착된 필름에 일반 점착제를 적용시켜 만든 대전방지 테이프 및 알칼리토 금속염을 사용하는 방법 등이 개시되었다.Therefore, in order to solve this problem, a lot of efforts have been made to maintain an antistatic effect on the adhesive component, a method of adding a material having a conductive component such as electrically conductive metal powder or carbon particles to the general adhesive formulation, electrostatic A method of adding an ionic substance in order to reduce the occurrence of, a method of using an antistatic tape and an alkaline earth metal salt made by applying a general adhesive to a metal-deposited film, and the like have been disclosed.
그러나, 이러한 기술들은 각각의 특징이 있지만 에멀젼에 점착제를 사용하기에는 한계가 있고 다이싱 테이프를 만드는 실질적인 공정에는 적용되지 못하는 경우가 많다. 또한 다이싱 테이프가 가져야 하는 특징은 대전방지 기능뿐만 아니라, 잘라낸 칩을 떼어낼 때 점착제에 의한 잔류물이 칩의 뒷면에 남으면 안되나 일반적인 점착제로는 다이싱 테이프로는 사용할 수가 없는 실정이었다.However, these techniques have their own characteristics, but there are limitations to using adhesives in emulsions and are often not applicable to the actual process of making dicing tapes. In addition, the characteristic of the dicing tape is not only an antistatic function, but also a residue of the adhesive when peeling off the cut chip should not remain on the back of the chip, but a general adhesive could not be used as a dicing tape.
본 발명자는 상기와 같은 종래 기술의 문제점을 해결하기 위하여 여러 연구를 수행한 결과 점착제와 UV 경화될 수 있는 광경화형 4급 암모늄염을 함유한 대전방지 저중합체(oligomer)를 합성하고, 상기 저중합체의 배합에 의하여 우수한 대전방지 기능과 잔사(residue)가 남지 않는 점착 표면을 형성시키며, 표면저항이 107Ω/㎠ 이하가 되는 대전방지 점착제를 얻을 수 있음을 발견하여 본 발명을 완성하였다.The present inventors have conducted a number of studies to solve the problems of the prior art as a result of the synthesis of an antistatic oligomer containing a pressure-sensitive adhesive and a UV curable photocurable quaternary ammonium salt, and the The present invention has been completed by discovering that an antistatic pressure sensitive adhesive having an excellent antistatic function and residue are not formed, and having a surface resistance of 10 7 Ω / cm 2 or less.
따라서 본 발명은 우수한 대전방지 기능을 갖고 점착제를 띨 때 잔류물이 남지 않는 4급 암모늄염을 함유하는 대전방지 저중합체, 이를 함유하는 대전방지 점착제 및 그 제조방법을 제공하는 것을 그 목적으로 한다.It is therefore an object of the present invention to provide an antistatic oligomer containing a quaternary ammonium salt that has excellent antistatic function and does not leave a residue when the adhesive is squeezed, an antistatic adhesive containing the same, and a method for producing the same.
상기 목적을 달성하기 위하여 본 발명은 다음 화학식 I로 표시되는 4급 암모늄염을 함유하는 대전방지 저중합체를 제공한다.In order to achieve the above object, the present invention provides an antistatic oligomer containing a quaternary ammonium salt represented by the following formula (I).
(상기 식에서,(Wherein
, ,
, ,
이며, Is,
R1은 수소, 아크릴기 또는 메타크릴기, R2는 수소, 메틸, 또는 에틸기, R3는 수소 또는 메틸기, X는 CH3OSO3, CH3CH2OSO3, CCl3COO, CF3COO, CH3C6H5SO3, H2PO4, HCl이며, n은 2-12의 정수이다)R 1 is hydrogen, acrylic or methacryl group, R 2 is hydrogen, methyl, or ethyl group, R 3 is hydrogen or methyl group, X is CH 3 OSO 3 , CH 3 CH 2 OSO 3 , CCl 3 COO, CF 3 COO , CH 3 C 6 H 5 SO 3 , H 2 PO 4 , HCl, n is an integer from 2-12)
상기 저중합체는 1차 단계에서 광경화형 대전방지 모노머를 합성한 후, 2차 단계에서 분자량 500 이상의 광경화형 저중합체를 합성하여 얻어진다.The oligomer is obtained by synthesizing a photocurable antistatic monomer in a first step, and then a photocurable oligomer having a molecular weight of 500 or more in a second step.
본 발명은 또한 상기 화학식 I로 표시되는 4급 암모늄염을 함유하는 대전방지 저중합체, 아크릴릭 점착제, 하이드록시프로필 아크릴레이트(HPA) 및 광개시제를 함유하는 대전방지 점착제를 제공한다.The present invention also provides an antistatic adhesive containing an antistatic oligomer, an acrylic pressure sensitive adhesive, a hydroxypropyl acrylate (HPA) and a photoinitiator containing a quaternary ammonium salt represented by the above formula (I).
본 발명에 의하면 프리폴리머(prepolymer)가 광경화하여 3차원 네트워크를 형성하여 점착제의 점착 성분을 감소시키며 또한 점착제의 잔사의 문제를 해결 할 수 있다.According to the present invention, the prepolymer can be photocured to form a three-dimensional network, thereby reducing the adhesive component of the adhesive and also solving the problem of the residue of the adhesive.
본 발명의 4급 암모늄염을 함유하는 광경화형 대전방지 저중합체는 다음의 화학식 I 로 표시된다.The photocurable antistatic oligomer containing the quaternary ammonium salt of the present invention is represented by the following general formula (I).
(상기 식에서,(Wherein
, ,
, ,
이며, Is,
R1은 수소, 아크릴기 또는 메타크릴기, R2는 수소, 메틸, 또는 에틸기, R3는 수소 또는 메틸기, X는 CH3OSO3, CH3CH2OSO3, CCl3COO, CF3COO, CH3C6H5SO3, H2PO4, HCl이며, n은 2-12의 정수이다)R 1 is hydrogen, acrylic or methacryl group, R 2 is hydrogen, methyl, or ethyl group, R 3 is hydrogen or methyl group, X is CH 3 OSO 3 , CH 3 CH 2 OSO 3 , CCl 3 COO, CF 3 COO , CH 3 C 6 H 5 SO 3 , H 2 PO 4 , HCl, n is an integer from 2-12)
상기 화학식 I의 광경화형 대전방지 점착제용 저중합체는 다음과 같은 단계로 제조된다.The oligomer for photocurable antistatic adhesive of Formula I is prepared in the following steps.
제1 단계로 대전방지 모노머를 합성하기 위하여, 광경화형 다관능성 저분자량 모노머와 친핵성 일차 혹은 이차 아민화합물을 반응시켜 광경화형 3급 아민으로 합성한 후, 적당한 산을 사용하여 4급 암모늄염을 합성한다.In order to synthesize an antistatic monomer in the first step, a photocurable polyfunctional low molecular weight monomer and a nucleophilic primary or secondary amine compound are reacted to synthesize a photocurable tertiary amine, and then a quaternary ammonium salt is synthesized using a suitable acid. do.
여기서, 상기 광경화형 다관능성 저분자량 모노머로는 분자내에 적어도 2개 이상의 탄소-탄소 이중 결합을 두 개 이상 갖는 화합물을 사용하며, 예를 들어, 트리메틸올프로판 트리아크릴레이트(trimethylolpropane triacrylate), 테트라메틸올메탄 테트라아크릴레이트(tetramethylolmethane tetraacrylate), 펜타에리쓰리톨 테트라아크릴레이트(pentaerythritol tetraacrylate), 디펜타에리쓰리톨 모노히드록시 펜타아크릴레이트(dipentaerythritol monohydroxy pentaacrylate), 디펜타에리쓰리톨 헥사아크릴레이트(dipentaerythritol hexaacrylate), 1,4-부틸렌글리콜 디아크릴레이트(1,4-butylenegylcol diacrylate), 폴리에틸렌글리콜 디아크릴레이트(poly ethyleneglycol diacrylate) 등을 들 수 있다.Here, as the photocurable multifunctional low molecular weight monomer, a compound having two or more at least two carbon-carbon double bonds in a molecule is used, for example, trimethylolpropane triacrylate, tetramethyl Tetramethylolmethane tetraacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxy pentaacrylate, dipentaerythritol hexaacrylate (dipentaerythritol hexaacrylate) ), 1,4-butylene glycol diacrylate (1,4-butylenegylcol diacrylate), polyethylene glycol diacrylate (polyethyleneglycol diacrylate) and the like.
상기 친핵성 일차 또는 이차 아민 화합물로는 알킬사슬에 적어도 1개 이상의 히드록시기를 함유한 1차 혹은 2차 아민, 예를 들어, 탄소수 2~12 개의 알킬사슬에 1개 혹은 2개 이상의 히드록시기를 가지는 모노에탄올아민, 모노프로판올아민, 모노부탄올아민, 모노펜탄올아민, 모노헥산올아민, 모노헵탄올아민, 모노옥탄올아민, 모노노난올아민, 모노데칸올아민, 모노운데칸올아민, 모노도데칸올아민 등의 1차 아민이거나 메틸 혹은 에틸 에탄올아민, 메틸 혹은 에틸 프로판올아민, 메틸 혹은 에틸 부탄올아민, 메틸 혹은 에틸 펜탄올아민, 메틸 혹은 에틸 헥산올아민, 메틸 혹은 에틸 헵탄올아민, 메틸 혹은 에틸 옥탄올아민, 메틸 혹은 에틸 노난올아민, 메틸 혹은 에틸 데칸올아민, 메틸 혹은 에틸 운데칸올아민, 메틸 혹은 에틸 도데칸올아민 등의 2차 아민이거나 디에탄올아민, 디프로판올아민, 디부탄올아민 등을 들 수 있다.The nucleophilic primary or secondary amine compound is a primary or secondary amine containing at least one or more hydroxy groups in the alkyl chain, for example, mono having one or two or more hydroxyl groups in the alkyl chain of 2 to 12 carbon atoms Ethanolamine, monopropanolamine, monobutanolamine, monopentanolamine, monohexanolamine, monoheptanolamine, monooctanolamine, monononanolamine, monodecanolamine, monoundecanolamine, monododecanol Primary amines such as amines or methyl or ethyl ethanolamine, methyl or ethyl propanolamine, methyl or ethyl butanolamine, methyl or ethyl pentanolamine, methyl or ethyl hexanolamine, methyl or ethyl heptanolamine, methyl or ethyl octane Secondary amines such as olamine, methyl or ethyl nonanolamine, methyl or ethyl decanolamine, methyl or ethyl undecanolamine, methyl or ethyl dodecanolamine And the like, or diethanolamine, di-propanol amine, di-butanol amine.
상기 광경화형 다관능성 저분자량 모노머와 친핵성 화합물인 일차 혹은 이차 아민의 반응은 60 ℃ 이하에서 이루어진다.The reaction of the photocurable polyfunctional low molecular weight monomer and the primary or secondary amine which is a nucleophilic compound is carried out at 60 ° C. or lower.
상기 산으로서는 무기산, 유기산, 메틸 설페이트 또는 에틸 설페이트 등을 사용할 수 있다. 또한 상기 무기산으로는 예를 들어 HCl, HF, HBr, HI, H2SO4,H3PO4등을 들 수 있으며, 유기산으로는 p-톨루엔설폰산, 모노염화초산, 이염화초산, 삼염화초산, 삼불소초산, 삼불소메탄설폰산 등을 들 수 있으나, 본 발명은 이에 국한 되는 것은 아니다.As the acid, an inorganic acid, an organic acid, methyl sulfate, ethyl sulfate, or the like can be used. In addition, examples of the inorganic acid include HCl, HF, HBr, HI, H 2 SO 4 , H 3 PO 4 , and the like, and organic acids include p-toluenesulfonic acid, monochloroacetic acid, dichloroacetic acid and trichloroacetic acid. , Trifluoroacetic acid, trifluoromethanesulfonic acid, and the like, but the present invention is not limited thereto.
다음 제2 단계로, 제1 단계에서 얻어진 4급 암모늄염과, 말단에 단관능 혹은 다관능기를 가지는 이소시아누레이트(isocyanurate) 우레탄 프리폴리머, 예를 들어, 2,4-톨릴렌 디이소시아네이트(2,4-tolylene diisocyanate), 디페닐메탄 4,4'-디이소시아네이트(diphenylmethane 4,4'-diisocyanate), 2,6-톨루일렌 디이소시아네이트(2,6-toluylene diisocyanate), 1,3-자일렌 디이소시아네이트(1,3-xylene diisocyante), 1,4-자이렌 디이소시아네이트(1,4-xylene diisocyante), 디페닐메탄 2,4-디이소시아네이트(diphenylmethane 2,4-diisocyanate), 3-메틸디페닐메탄 디이소시아네이트(3-methyldiphenylmethane diisocyanate), 헥사메틸렌 디이소시아네이트(hexamethylene diisocyanate), 이소포론 디이소시아네이트(isophorone diisocyanate), 디사이클로헥실-메탄-4,4'-디이소시아네이트(dicyclohexyl-methane 4,4'-diisocyante), 이소시아누레이트 트리머(isocyanurate trimer) 등과 같은 이소시아네이트와 반응시켜 새로운 우레탄 결합을 가지는 광경화할 수 있는 대전방지 기능을 갖는 저중합체가 합성된다.In the second step, the quaternary ammonium salt obtained in the first step and an isocyanurate urethane prepolymer having a mono- or polyfunctional group at the terminal, for example, 2,4-tolylene diisocyanate (2, 4-tolylene diisocyanate, diphenylmethane 4,4'-diisocyanate, 2,6-toluylene diisocyanate, 1,3-xylene diisocyanate Isocyanate (1,3-xylene diisocyante), 1,4-xylene diisocyante, diphenylmethane 2,4-diisocyanate, 3-methyldiphenyl 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexyl-methane-4,4'- diisocyanate (dicyclohexyl-methane 4,4'- diisocyante, isocyanuric trimmer Reactions with isocyanates such as ate trimer), etc., result in the synthesis of oligomers with photocurable antistatic functions with new urethane bonds.
상기와 같이 합성된 본 발명의 대전방지 저중합체는 점도가 높기 때문에 광 경화형 희석제로 10~30 중량% 정도 희석시켜 사용할 수 있으며, 이 때 상기 희석제로는 이소옥틸 아크릴레이트(isooctyl acrylate), 4-메틸-2-펜틸아크릴레이트(4-methyl-2-pentylacrylate), 2-메틸 부틸아크릴레이트(2-methyl butylacrylate), 이소아밀 아크릴레이트(isoamyl acrylate), sec-부틸 아크릴레이트(sec-butyl acrylate), n-부틸 아크릴레이트(n-butylacrylate), 2-에틸헥실 아크릴레이트(2-ethylhexy acrylate) 또는 그에 상당하는 메타크릴레이트(methacrylate ) 등을 사용할 수 있다. 또한 말단에 히드록시기가 있고 아크릴 혹은 메타크릴 작용기가 있는 극성이 있는 물질을 사용할 수도 있으며, 예를 들어 2-히드록시에틸 아크릴레이트 혹은 메타크릴레이트, 히드록시프로필 아크릴레이트, 카프로락탐 변형 에틸아크릴레이트 등을 들 수 있다. 또한 유리전이온도(glass transition temperature)가 -20 ℃보다 더 큰 아크릴레이트 혹은 메타아크릴레이트, 예를 들어 t-부틸아크릴레이트, 비닐 아세테이트 혹은 이와 비슷한 물질들을 한가지 혹은 혼합물로 희석시켜 사용할 수 있다.Since the antistatic oligomer of the present invention synthesized as described above has a high viscosity, it may be used by diluting about 10 to 30% by weight with a photocurable diluent, wherein the diluent isooctyl acrylate, 4- 4-methyl-2-pentylacrylate, 2-methyl butylacrylate, isoamyl acrylate, sec-butyl acrylate , n-butyl acrylate (n-butylacrylate), 2-ethylhexy acrylate (2-ethylhexy acrylate) or methacrylate equivalent (methacrylate) and the like can be used. In addition, a polar substance having a hydroxy group at the terminal and having an acrylic or methacryl functional group may be used, for example, 2-hydroxyethyl acrylate or methacrylate, hydroxypropyl acrylate, caprolactam modified ethyl acrylate, or the like. Can be mentioned. It is also possible to dilute acrylates or methacrylates such as t-butyl acrylate, vinyl acetate or the like with a glass transition temperature greater than -20 ° C. into one or a mixture.
상기와 같이 얻어진 화학식 I의 광경화형 대전방지 저중합체는 아크릴릭 점착제, 하이드록시프로필 아크릴레이트 및 광개시제를 혼합하여 본 발명의 도전방지 점착제를 얻을 수 있다.The photocurable antistatic oligomer of the formula (I) obtained as described above may obtain an anticonductive adhesive of the present invention by mixing an acrylic adhesive, hydroxypropyl acrylate and a photoinitiator.
상기 광개시제는 UV에 경화할 수 있도록 사용하는 것으로, 예를 들어, 이소프로필벤조인 에테르(isopropyl benzoin ether), 이소부틸벤조인 에테르(isobutyl benzoin ether), 벤조페논(benzopheneone), 미클러스 케톤(Michler's ketone), 디클로로티오산톤(dichlorothioxantone), 도데실티오산톤(dodecylthioxantone), 디메틸티오산톤(dimethylthioxantone), 아세토페논디에틸케탈(acetophenone diethyl ketal), 벤질디메틸 케탈(benzyldimethyl ketal), 알파-히드록시시클로헥실 페닐케톤(α-hydroxycyclohexyl phenylketone), 2-히드록시-2-메틸-1-페닐프로판-온(2-hydroxy-2-methyl-1-phenylpropanone), 1-히드록시시클로헥실 페닐케톤(1-hydroxy cyclohexyl phenyl ketone)을 들 수 있다. 상기 광개시제는 1∼5 중량%로 단독 혹은 여러 가지를 혼합하여 사용할 수 있다.The photoinitiator is used to be curable to UV, for example, isopropyl benzoin ether, isobutyl benzoin ether, benzopheneone, mycolide ketone ( Michler's ketone, dichlorothioxantone, dodecylthioxantone, dimethylthioxantone, acetophenone diethyl ketal, benzyldimethyl ketal, alpha-hydride Α-hydroxycyclohexyl phenylketone, 2-hydroxy-2-methyl-1-phenylpropanone, 1-hydroxycyclohexyl phenylketone 1-hydroxy cyclohexyl phenyl ketone). The photoinitiator may be used alone or in combination of 1 to 5% by weight.
이하 우수한 대전방지 기능을 가지며 잔사가 남지 않는 본 발명의 대전방지점착제의 제조방법을 실시예를 통하여 보다 상세히 설명한다.Hereinafter, a method of preparing an antistatic adhesive of the present invention having excellent antistatic function and no residue will be described in more detail with reference to Examples.
실시예 1Example 1
강력 교반기, 온도계, 적가펀넬, 콘덴서와 재킷이 갖추어진 2L 유리 반응기에 250g의 에틸아세테이트, 50g의 n-부틸아크릴레이트, 50g의 n-헥실아크릴레이트, 10g의 2-히드록시아크릴레이트, 5g의 글리시딜 메타크릴레이트, 5g의 5-카복시펜틸 아크릴레이트 및 1g의 아조비스이소부티로니트릴을 넣는다. 60 ℃에서 4시간 동안 질소 분위기에서 고분자 중합반응을 수행하고, 80 ℃에서 2시간 동안 더 반응을 진행시켜 아크릴레이트 점착제를 얻는다.250g ethyl acetate, 50g n-butylacrylate, 50g n-hexylacrylate, 10g 2-hydroxyacrylate, 5g in a 2L glass reactor equipped with a strong stirrer, thermometer, dropping funnel, condenser and jacket Glycidyl methacrylate, 5 g 5-carboxypentyl acrylate and 1 g azobisisobutyronitrile are added. The polymer polymerization is carried out in a nitrogen atmosphere at 60 ° C. for 4 hours, and further reacted at 80 ° C. for 2 hours to obtain an acrylate adhesive.
실시예 2Example 2
강력 교반기, 온도계, 적가펀넬, 콘덴서와 재킷이 갖추어진 2L 유리 반응기에 펜타에리쓰리톨 테트라아크릴레이트 352g을 넣고, N-메틸에탄올아민 75g을 적가 펀넬을 통하여 반응온도가 50 ℃가 넘지 않도록 천천히 떨어 뜨리면서 교반하여 준다. 적가가 완료된 후, 반응온도를 60 ℃로 1시간 동안 유지하면서 강력 교반기로 교반하여 준다. 온도를 20 ℃로 낮추고 이소옥틸 아크릴레이트 50g을 넣어 희석시키고, 삼불소초산 116g을 천천히 떨어뜨려 4급 암모늄염을 형성 시킨다. 이때 50 ℃가 넘으면 반응용액이 겔화되는 현상이 일어나므로, 온도가 50 ℃ 이상을 넘지 않도록 한다.352 g of pentaerythritol tetraacrylate is placed in a 2 L glass reactor equipped with a strong stirrer, thermometer, dropping funnel, condenser and jacket, and 75 g of N-methylethanolamine is slowly dropped through the dropping funnel so that the reaction temperature does not exceed 50 ° C. Stir while stirring. After the dropwise addition is completed, the reaction temperature is maintained at 60 ° C. for 1 hour while stirring with a strong stirrer. Lower the temperature to 20 ℃ and dilute 50 g of isooctyl acrylate and slowly drop 116 g of trifluoroacetic acid to form a quaternary ammonium salt. At this time, since the reaction solution gels when the temperature exceeds 50 ° C., the temperature does not exceed 50 ° C. or more.
실시예 3Example 3
실시예 2에서 대전방지 모노머인 4급 암모늄염의 합성이 완료되면, 그 반응기에 헥사메틸렌 디이소시아네이트 100g과 에틸아세테이트 100g을 적가 펀넬을 통하여 천천히 적가시키고 온도가 50 ℃가 넘지 않도록 하면서 강력 교반기로 교반하여 준다. 3시간 이상을 교반시켜 반응을 완결시켜 대전방지 저중합체를 얻는다.When the synthesis of the quaternary ammonium salt, an antistatic monomer in Example 2, was completed, 100 g of hexamethylene diisocyanate and 100 g of ethyl acetate were slowly added dropwise to the reactor through a dropping funnel, and stirred with a strong stirrer while keeping the temperature not higher than 50 ° C give. Stir at least 3 hours to complete the reaction to obtain an antistatic oligomer.
실시예 4Example 4
실시예 2에서 대전방지 모노머인 4급 암모늄염의 합성이 완료되면, 그 반응기에 헥사메틸렌 디이소시아네이트의 3중합체인 크로토네이트-HX(일본 폴리우레탄사의 상품명) 220g 과 에틸아세테이트 100g을 적가 펀넬을 통하여 천천히 적가시키고 온도가 50 ℃가 넘지 않도록 하면서 강력 교반기로 교반하여 준다. 3시간 이상을 교반시켜 반응을 완결시켜 대전방지 저중합체를 얻는다.When the synthesis of the quaternary ammonium salt, an antistatic monomer in Example 2, was completed, 220 g of crotonate-HX (trade name of Polyurethane Co., Ltd., Japan) and 100 g of ethyl acetate were added dropwise through the reactor to the reactor. Slowly add dropwise and stir with a strong stirrer while keeping the temperature no higher than 50 ℃. Stir at least 3 hours to complete the reaction to obtain an antistatic oligomer.
실시예 5Example 5
실시예 2에서 대전방지 모노머인 4급 암모늄염의 합성이 완료되면, 그 반응기에 이소포론 디이소시아네이트(독일 알드리히(Aldrich)사 제품) 135g과 에틸아세테이트 100g을 적가 펀넬을 통하여 천천히 적가시키고 온도가 50℃가 넘지 않도록 하면서 강력 교반기로 교반하여 준다. 3시간 이상을 교반시켜 반응을 완결시켜 대전방지 저중합체를 얻는다.When the synthesis of the quaternary ammonium salt, an antistatic monomer in Example 2, was completed, 135 g of isophorone diisocyanate (Aldrich, Germany) and 100 g of ethyl acetate were slowly added dropwise through a funnel and the temperature was decreased. Stir with a strong stirrer while not exceeding 50 ° C. Stir at least 3 hours to complete the reaction to obtain an antistatic oligomer.
실시예 6∼실시예 17Examples 6-17
실시예 1에서 얻어진 아크릴레이트 점착성 고체성분 100 부에 실시예 3∼실시예 5에서 만든 대전방지 저중합체, 광 개시제 및 하이드록시프로필 아크릴레이트 (HPA)를 다음 표 1에 나타내는 성분과 함량으로 배합하여 50 ℃에서 2 시간 교반시킨다. 50 미크론의 여과백을 사용하여 여과하여 대전방지 점착제를 얻는다. 다음의 표 1에 각 실시예의 성분과 함량을 정리하였다.The antistatic oligomer, photoinitiator and hydroxypropyl acrylate (HPA) made in Examples 3 to 5 were combined with 100 parts of the acrylate adhesive solid component obtained in Example 1, in the amounts and components shown in Table 1 below. Stir at 50 ° C. for 2 hours. Filtration was carried out using a 50 micron filter bag to obtain an antistatic pressure sensitive adhesive. Table 1 summarizes the components and contents of each example.
실시예 18Example 18
실시예 1에서 만든 아크릴레이트 점착제를 80 미크론 두께의 폴리프로필렌 필름 기재에 두께 10 미크론이 되도록 #7 마이어 바(Meyer bar)로 도포한 후, 80 ℃의 열풍으로 3분간 건조시킨다.The acrylate adhesive prepared in Example 1 was applied to a 80-micron-thick polypropylene film substrate with a # 7 Meyer bar to be 10 microns thick, and then dried for 3 minutes with hot air at 80 ° C.
상기 실시예 6∼18 에서 얻어진 대전방지 점착제의 점착코팅, 표면저항 및 잔사를 다음 방법에 의하여 측정하고, 그 결과를 표 2에 나타내었다. 또한 SEM 결과를 나타내는 사진을 표 3∼표 6에 나타내었다.The pressure-sensitive adhesive coating, surface resistance and residue of the antistatic pressure sensitive adhesive obtained in Examples 6 to 18 were measured by the following method, and the results are shown in Table 2. In addition, photographs showing SEM results are shown in Tables 3 to 6.
점착 코팅Adhesive coating
실시예 6∼실시예 18에서 얻어진 점착제를 80 미크론 두께의 폴리프로필렌 필름 기재에 두께 10 미크론이 되도록 #7 마이어 바로 도포하고 80 ℃의 열풍으로 3분간 건조시킨 후, 고압 수은 UV 램프(80 W/cm, 조사간격 10 cm)로 3초간 조사하였다. 이렇게 준비한 점착 시트를 가상의 실리콘 웨이퍼로 두께 0.6 mm, 7 cm x 7 cm 크기의 깨끗한 유리표면에 적용시켜 유리판과 점착 시트간의 점착력을 한국산업규격 KS A 1107 혹은 JIS-Z-0237 방법(180 °필링(peeling)방법, 필링속도 300 mm/min, 시료크기 25 mm x 25 mm, 23℃, 65% RH)으로 점착력을 측정하였다.The pressure-sensitive adhesive obtained in Examples 6 to 18 was applied directly to a 80-micron-thick polypropylene film substrate so as to be 10 microns thick, and dried for 3 minutes with hot air at 80 ° C, followed by a high-pressure mercury UV lamp (80 W / cm, irradiation interval 10 cm) for 3 seconds. The adhesive sheet thus prepared was applied to a clean glass surface having a thickness of 0.6 mm and 7 cm x 7 cm with a virtual silicon wafer, and the adhesive force between the glass plate and the adhesive sheet was measured by the Korean Industrial Standard KS A 1107 or JIS-Z-0237 method (180 °). Adhesion was measured by a peeling method, a peeling speed of 300 mm / min, a sample size of 25 mm × 25 mm, 23 ° C., 65% RH).
표면저항의 측정Measurement of surface resistance
실시예 6∼실시예 18에서 얻어진 점착제를 80 미크론 두께의 폴리프로필렌 필름 기재에 두께 10 미크론이 되도록 #7 마이어 바로 도포하고 80 ℃의 열풍으로 3분간 건조시킨 후, 고압 수은 UV 램프(80 W/cm, 조사간격 10 cm)로 3초간 조사한 점착 시트를 초절연 저항계를 사용하여 ASTM-D257 방법으로 습도 55%, 가전압 500 V의 조건에서 1분후의 표면저항치(Ω/㎠)를 측정하였다.The pressure-sensitive adhesive obtained in Examples 6 to 18 was applied directly to a 80-micron-thick polypropylene film substrate so as to be 10 microns thick, and dried for 3 minutes with hot air at 80 ° C, followed by a high-pressure mercury UV lamp (80 W / cm and an irradiation interval of 10 cm), the surface resistance value (Ω / cm 2) after 1 minute was measured by the ASTM-D257 method under a condition of 55% of humidity and an applied voltage of 500 V by using an ultra-insulating resistance meter.
잔사의 측정Measurement of residue
실시예 6∼실시예 18에서 얻어진 점착제를 80 미크론 두께의 폴리프로필렌 필름 기재에 두께 10 미크론이 되도록 #7 마이어 바로 도포하고 80 ℃의 열풍으로 3분간 건조시킨 후, 고압 수은 UV 램프(80 W/cm, 조사간격 10 cm)로 3초간 조사한점착 시트에 3 cm x 3 cm의 유리판을 점착 시트의 중앙에 붙히고 10 Kg의 하중으로 24시간 유지시키고 점착 sheet를 떼어낸 후, 유리판을 아이언 코팅기를 사용하여 금으로 증착시킨 후 SEM(Scanning Electron Microscope, Model : Jeol JSM-5410LV)으로 10,000 배율로 표면을 관찰하였다.The pressure-sensitive adhesive obtained in Examples 6 to 18 was applied directly to a 80-micron-thick polypropylene film substrate so as to be 10 microns thick, and dried for 3 minutes with hot air at 80 ° C, followed by a high-pressure mercury UV lamp (80 W / 3 cm x 3 cm glass plate was attached to the center of the adhesive sheet, held for 24 hours under a load of 10 kg, and the adhesive sheet was peeled off. After depositing with gold using a SEM (Scanning Electron Microscope, Model: Jeol JSM-5410LV) the surface was observed at 10,000 magnification.
상기 표에서 SEM 결과는 다음과 같이 표시하였다.SEM results in the table are shown as follows.
사진 상에서 잔류물이 50개 이상 보일 때 ×When you see more than 50 residues on the photo ×
사진 상에서 잔류물이 50개 이하 보일 때 △When you see 50 or less residues on the picture △
사진 상에서 잔류물이 없을 때 ◎When there is no residue on the picture ◎
잔사 정도 : XResidual degree: X
잔사 정도 : XResidual degree: X
잔사 정도 : △Residual degree: △
잔사 정도 : ◎Residual degree: ◎
이상 기술한 바와 같이, 본 발명에 따른 4급 암모늄염을 포함하는 대전방지 저중합체 및 이의 배합에 의하여 얻어지는 대전방지 점착제는 우수한 대전방지 기능을 가지며 잔사가 남지 않는 점착 표면을 형성시키며, 표면저항이 107Ω/㎠ 이하를 얻을 수 있다.As described above, the antistatic oligomer comprising the quaternary ammonium salt according to the present invention and the antistatic adhesive obtained by the combination thereof has an excellent antistatic function and forms an adhesive surface with no residue, and the surface resistance is 10 7 Ω / cm 2 or less can be obtained.
Claims (14)
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