JP6862027B2 - Protective coating agent composition for wafer processing, and protective coating agent containing it - Google Patents

Description

The present invention relates to a protective coating agent composition for processing a wafer for producing a semiconductor, and more specifically, a wafer processing that is coated on the surface of a wafer or the like and can protect the surface of the wafer during a manufacturing process. Protective coating agent composition for wafer processing, and a protective coating agent for wafer processing containing the same.

In the semiconductor wafer processing process, the dicing process is also called sawing, and is located between the wafer manufacturing process and the packaging process in the semiconductor production process, and is a process of separating the wafer into individual chip units. Is.

At this time, while the process of separating the individual chips of the semiconductor wafer by using the blade is in progress, the fragments are scattered on the surface of the chips, which induces defects. In order to solve such a problem, a method is used in which nozzles are provided on both sides of the blade and in the horizontal direction of the wafer, a large amount of water is sprayed at high pressure, and debris falling on the surface of the chip is immediately removed. did. Such a method was useful when the semiconductor chip was large and the processing time was short, and when the amount of debris was small. The amount has also increased, making it impossible to properly remove debris.

Therefore, in order to overcome the above-mentioned problems, in the Republic of Korea Patent Application No. 10-2009-0066314, polyethylene oxide / polypropylene oxide (PEO-PPO) and polyethylene glycol (PEO-PPO), which are nonionic surfactants, are described. It is disclosed that a cleaning solution composition is produced by using PEG (polyethylene glycol) and other additives.

However, in the above-mentioned composition, debris of a certain size can be removed at the time of sewing, but in the case of fine debris, it cannot be completely removed. After all, such fine debris still leaves defects such as scratches and indentations.

Therefore, wafer processing that can form a coating layer on the surface of such a wafer and fundamentally block defects such as scratches, indentations, stains, whitening, or corrosion that occur during processing processes such as cutting processes. Protective coating agent is needed.

On the other hand, in such a protective coating agent for semiconductor wafer processing, the coating agent on the surface of each chip must be removed after the individual chips are rearranged after the dicing step. Since the substance forming the wafer protective coating agent is a polymer resin such as the substance forming the photoresist, a release agent used for removing the photoresist can be applied.

As such a release agent, those disclosed in US Patent Publication No. 4,617,251 are known. That is, in the above-mentioned American published patent documents, a specific amine compound [for example, 2- (2-amino-ethoxy) ethanol] and a specific polar solvent (for example, tetrahydrofurfuryl alcohol, isophorone, gamma-butyrolactone, N, N-dimethyl) A positive photoresist stripping composition containing (acetamide, and mixtures thereof) is disclosed.

Korean Patent Publication No. 2001-0018377 proposes a resist stripping agent containing an amine compound, a glycol solvent, and perfluoroalkylethylene oxide.

Korean Patent Publication No. 2000-0016878 proposes a stripping solution containing an alkoxyN-hydroxyalkylalkaneamide, a polar substance having a dipole moment of 3 or more, a damage inhibitor, and an alkanolamine.

However, the release agent proposed in such a prior art is not advantageous in terms of environment and treatment cost because the process conditions are high temperature, and there is a limit to cleaning the residue. In addition, since the process conditions are high temperature, there is a risk of corrosion, and a corrosion inhibitor is used. When the azole-based additive is used for the purpose of preventing corrosion, there is a problem that the biodegradability is lowered and a separate waste liquid treatment is required.
Therefore, it is necessary to have a release agent that not only easily removes the protective coating agent remaining on the wafer surface under normal temperature conditions but also does not induce damage such as corrosion.

The present invention has been devised in consideration of the above points, and is a wafer capable of protecting the surface during a semiconductor manufacturing process, processing a wafer or the like, and preventing surface damage due to inflow of foreign matter or the like. An object of the present invention is to provide a protective coating agent for processing.

Another object of the present invention is to provide a wafer processing release agent capable of easily removing a protective coating agent for wafer processing without damaging or corroding the wafer surface.

In order to solve the above-mentioned problems, polyurethane resin 15 to 45% by weight, polar organic solvent 45 to 80% by weight, surface adjusting additive 0.0001 to 1% by weight, fluidity adjusting agent 0.0001 to 1% by weight. , A composition of a coating agent for wafer processing containing 0.0001 to 1% by weight of an adhesion accelerator and 1.0 to 10% by weight of water.

In a preferred embodiment of the present invention, the polyurethane resin is a coating agent composition for wafer processing containing a compound represented by Chemical Formula 1 having a weight average molecular weight (Mw) of 100 to 10,000.

In the above chemical formula 1, R ₁ to R ₃ , R ₅ and R ₈ are independently hydrogen atoms, alkyl groups having 4 or less carbon atoms, or aryl groups having 5 to 24 carbon atoms, and R ₄ , R ₆ and R ₇ are independently alkylene groups having 4 or less carbon atoms or arylene groups having 5 to 24 carbon atoms, and n and k are independently 0 to 10, respectively. It is an integer, and m is an integer that independently satisfies the weight average molecular weight of the compound represented by the chemical formula 1.

Further, R ₁ to R ₃ , R ₅ and R ₈ of the compounds represented by the chemical formula 1 are independently substituted or unsubstituted alkyl groups having 4 or less carbon atoms, or substituted or unsubstituted aryls, respectively. The aryl group is a phenyl group, a biphenyl group, a naphthyl group, an anthracene group, a phenanthrene group, a pyrene group, and a perylene group. , look including the one selected from a group consisting of chrysene (chrysene) group, cresol (cresol) groups and fluorene (fluorene) group, R _4, R ₆ and R ₇ mentioned above is, independently, It is a substituted or unsubstituted alkylene group having 4 or less carbon atoms, or a substituted or unsubstituted arylene group, and the arylene group is a phenylene group, a biphenylene group, a naphthylene group, an anthracenylene group, a phenanthreneylene group, a pyreneylene group. , one may also including I the chosen among the group consisting of perylenylene group and a chrysenylene group.

Here, the compound represented by the chemical formula 1 may be a coating agent composition for wafer processing produced by polymerizing alcohols on a copolymer represented by the following chemical formula 8.

In the above chemical formula 8, R ₁ to R ₃ , R ₅ and R ₈ are independently hydrogen atoms, alkyl groups having 4 or less carbon atoms, or aryl groups having 5 to 24 carbon atoms, and R ₄ , R ₆ and R ₇ are independently alkylene groups having 4 or less carbon atoms or arylene groups having 5 to 24 carbon atoms, and n and k are independently 0 to 10, respectively. It is an integer, and m is an integer satisfying the weight average molecular weight (Mw) of the compound represented by Chemical Formula 8 of 100 to 10,000.

In one preferred embodiment of the present invention, the alcohols can be selected from the group consisting of methanol, ethanol, propanol and butanol, and even more preferably ethanol.

In a preferred embodiment of the present invention, there is provided a wafer processing coating agent containing such a wafer processing coating agent composition, and a method for producing the wafer processing coating agent.

Specifically, as a method for producing the coating agent for wafer processing, the compounds represented by the following chemical formulas 3, 4 and 5 are subjected to 1: 0.1 to 10: with respect to the following chemical formula 2. One step of introducing into a reaction vessel at a molar ratio of 1: 0.1 to 5.0: 1: 1.0 to 10.0 to produce a first polymer, the first polymer, and the following chemical formula 6 The second copolymer is produced in the second step of reacting with the monomer represented by the above chemical formula 7, and the second copolymer is reacted with the monomer represented by the following chemical formula 7 to form a third copolymer. The three steps of producing a coalescence, the four steps of reacting the third copolymer with alcohols and distilled water to produce a compound represented by the following chemical formula 1, and the compound represented by the chemical formula 1 are described. It may be a method for producing a coating agent composition for wafer processing, which comprises a fifth step of mixing a surface adjusting additive, a fluidity adjusting agent, an adhesion accelerator, a polar organic solvent and water.

In the above chemical formula 1, R ₁ to R ₃ , R ₅ and R ₈ are independently hydrogen atoms, alkyl groups having 4 or less carbon atoms, or aryl groups having 5 to 24 carbon atoms, and R ₄ , R ₆ and R ₇ are independently alkylene groups having 4 or less carbon atoms or arylene groups having 5 to 24 carbon atoms, and n and k are independently 0 to 10, respectively. It is an integer, where m is an integer satisfying the weight average molecular weight (Mw) of the compound represented by Chemical Formula 1;

In the above chemical formula 2, R ₂ and R ₃ are independently hydrogen atoms, an alkyl group having 4 or less carbon atoms, or an aryl group having 5 to 24 carbon atoms, and R ₁ and R ₄ are respectively. Independently, it is an alkylene group having 4 or less carbon atoms or an arylene group having 5 to 24 carbon atoms, n and k are each independently an integer of 0 to 10, and m is a chemical formula 2. It is an integer satisfying the weight average molecular weight (Mw) of the compound represented by 100 to 10,000;

前記化学式３で、Ｒ_１ないしＲ_３は、それぞれ独立して、水素原子、炭素数５〜２４個のアリール基または炭素数４個以下のアルキル基である；

In the above chemical formula 3, R ₁ to R ₃ are independently hydrogen atoms, aryl groups having 5 to 24 carbon atoms, or alkyl groups having 4 or less carbon atoms;

前記化学式４で、Ｒ_１は、炭素数５〜２４個のアリール基、または炭素数４個以下のアルキル基である；

In the chemical formula 4, R ₁ is an aryl group having 5 to 24 carbon atoms or an alkyl group having 4 or less carbon atoms;

前記化学式５で、Ｒ_１は、炭素数５〜２４個のアリール基、または炭素数４個以下のアルキル基である；

In the chemical formula 5, R ₁ is an aryl group having 5 to 24 carbon atoms or an alkyl group having 4 or less carbon atoms;

前記化学式６で、Ｒ_１ないしＲ_３は、それぞれ独立して、水素原子、炭素数４個以下のアルキル基、または炭素数５〜２４個のアリール基である；

In the above chemical formula 6, R ₁ to R ₃ are independently hydrogen atoms, alkyl groups having 4 or less carbon atoms, or aryl groups having 5 to 24 carbon atoms;

前記化学式７で、Ｒ_１ないしＲ_３は、炭素数５〜２４個のアリール基、または炭素数４個以下のアルキル基である。

In the chemical formula 7, R ₁ to R ₃ are an aryl group having 5 to 24 carbon atoms or an alkyl group having 4 or less carbon atoms.

In a preferred embodiment of the present invention, the first polymer and the monomer represented by the chemical formula 6 have a weight ratio of 1: 0.1 to 5.0, and the second polymer and the chemical formula 7 have a weight ratio of 1: 0.1 to 5.0. The monomer represented by is mixed at a weight ratio of 1: 0.1 to 5.0, and the third copolymer and the alcohols are mixed at a weight ratio of 1: 1.0 to 10.0, respectively. It may be a method for producing a coating agent composition for wafer processing to be polymerized.

On the other hand, in a preferred embodiment of the present invention, the wafer surface is coated with the compound represented by the chemical formula 1, a second step of arranging the wafer in a pulling device, and dicing the wafer. A third step, a fourth step of selecting and arranging only non-defective parts among the parts cut in the dicing step, a fifth step of peeling the coating agent composition from the selected non-defective products, and the coating agent. Provided is a sixth step of inspecting a non-defective product from which the composition has been peeled off, and a wafer processing step including.

Here, in the first step, the step of coating the wafer surface with the compound represented by the chemical formula 1 can be performed at 0 to 50 ° C. for 1 to 60 seconds.

Further, the wafer processing release agent composition of the present invention is a wafer processing release agent composition that removes the coating agent formed on the wafer surface, and is represented by the compound represented by the following chemical formula 9 and the chemical formula 10. The coating agent may contain a compound, a compound represented by the chemical formula 11, and a surfactant, and the coating agent may contain a compound represented by the following chemical formula 1.

In the above chemical formula 9, R ₁ and R ₂ are independently hydrogen atoms, aryl groups having 5 to 24 carbon atoms, or alkyl groups having 4 or less carbon atoms;

In the above chemical formula 10, R ₁ is independently a hydrogen atom, an aryl group having 5 to 24 carbon atoms, or an alkyl group having 10 or less carbon atoms;

In the above chemical formula 11, R ₁ to R ₄ are independently hydrogen atoms and 5 to 24 carbon atoms.
Aryl group in dogs, or alkyl group with 4 or less carbon atoms;

In the above chemical formula 1, R ₁ to R ₃ , R ₅ and R ₈ are independently hydrogen atoms, alkyl groups having 4 or less carbon atoms, or aryl groups having 5 to 24 carbon atoms, and R ₄ , R ₆ and R ₇ are independently alkylene groups having 4 or less carbon atoms or arylene groups having 5 to 24 carbon atoms, and n and k are independently 0 to 10, respectively. It is an integer, and m is an integer satisfying the weight average molecular weight (Mw) of the compound represented by Chemical Formula 1 of 100 to 10,000.

In a preferred embodiment of the present invention, the surfactant has an average HLB (hydrophile-lipophile balance) value of 10 to 15, and the surfactant is a nonionic surfactant, an anionic surfactant, and the like. Alternatively, a mixture thereof may be included.
In a preferred embodiment of the invention, the nonionic surfactant is an alkylpolyglucoside, a polyoxyalkylene alkyl ether, a polyoxyalkylene alkyl phenyl ether, a polyoxyethylene alkyl octyl ether, a polyoxyethylene polyoxypropylene block copolymer. , Polyoxyethylene sorbitan fatty acid ester, and one or more selected from the group consisting of polyoxyethylene sorbitan fatty acid ester, and the anionic surfactant includes alkyl ether sulfate, alkyl sulfate, alkylbenzene sulfonate, alkyl sulfos. It may contain one or more selected from the group composed of cusinate, alkyl ether phosphate, alkyl phosphate, alkylbenzene phosphate, and salts thereof.

In a preferred embodiment of the present invention, the release agent composition comprises 30 to 90% by weight of the compound represented by the chemical formula 9, 5 to 60% by weight of the compound represented by the chemical formula 10, and the compound 1 represented by the chemical formula 11. It may contain ~ 30% by weight, and 0.1 to 1% by weight of the surfactant.
On the other hand, the wafer processing release agent of the present invention contains the above-mentioned wafer processing release agent composition. The wafer processing release agent of the present invention has an absolute viscosity of 80 to 120 cps, an effective alkalinity of 20 to 35, and a pH of 8 to 14.

According to the protective coating agent composition for wafer processing of the present invention and the protective coating agent for wafer processing containing the same, the protective coating layer containing polyurethane is formed on the surface of the wafer to cut the wafer during the semiconductor manufacturing process. In the processing process including the process, there is an effect that damage generated on the wafer surface or contamination by foreign matter can be fundamentally prevented.

Further, the protective coating agent according to the present invention has physical properties that are cured by heat, ultraviolet rays (UV), etc., and after curing, is not affected by heat or ultraviolet rays, has water resistance and hardness, and is provided during the manufacturing process. Not only is it not affected by water and can prevent surface damage due to debris, but it also has the characteristic of being easily removed by an alkaline solution after the manufacturing process is completed.

Further, according to the wafer processing release agent for removing the protective coating agent according to the present invention, the protective coating agent formed on the surface of the wafer includes a release agent composition containing no organic solvent such as alcohol. Therefore, there is an effect that the protective coating agent formed on the wafer surface can be easily removed in the wafer processing step during the semiconductor manufacturing process without damaging the surface of the wafer.

Further, in contrast to the protective coating agent according to the present invention, the release agent for wafer processing has hydrophilicity and can be easily mixed with water, so that there is no problem of corroding the material during the release process. Not only that, it has the effect of being able to be washed with water alone without using an organic solvent such as alcohol.

It is a graph which showed the FT-IR pattern by one Example (compound represented by Chemical Formula 1) of this invention. It is an SEM photograph by one Example of this invention. It is an EDS graph according to one Example of this invention. It is an SEM photograph by one Example of this invention. It is an EDS graph according to one Example of this invention.

Hereinafter, in order to more specifically explain the present invention, preferred examples according to the present invention will be described in more detail with reference to the attached drawings. However, the present invention is also embodied in various different forms and is not limited to the examples described herein. In the drawings, in order to clearly explain the present invention, parts unrelated to the description are omitted, and the same or similar components are designated by the same reference numerals throughout the specification.

As described above, conventionally, the size of the semiconductor chip is small, the processing time is long, the amount of debris generated is large, it is difficult to properly remove the debris, and it is difficult to protect the wafer surface against the debris. there were.

Therefore, in the present invention, by providing a coating agent composition for wafer processing containing the compound represented by the following chemical formula 1 containing the polyurethane resin and a protective coating agent for wafer processing containing the same, the above-mentioned problems I sought a solution.

In the above chemical formula 1, R ₁ to R ₃ , R ₅ and R ₈ are independently hydrogen atoms, alkyl groups having 4 or less carbon atoms, or aryl groups having 5 to 24 carbon atoms. Preferably, the aryl group is a phenyl group, a biphenyl group, a naphthyl group, an anthracene group, a phenanthrene group, a pyrene group, a perylene group, and the like. see contains one selected from a group consisting of chrysene (chrysene) group, cresol (cresol) groups and fluorene (fluorene) group, R _4, R ₆ and R ₇ mentioned above are each independently a substituted Alternatively, it is an unsubstituted alkylene group having 4 or less carbon atoms, or a substituted or unsubstituted arylene group, and the arylene group is a phenylene group, a biphenylene group, a naphthylene group, an anthracenylene group, a phenanthreneylene group, a pyrenylene group, one selected from a group consisting of perylenylene group and a chrysenylene group may also do free. It is more preferably an alkyl group or a phenyl group having 1 or 2 carbon atoms, and even more preferably a methyl group.

Further, n and k are each independently an integer of 0 to 10, and m independently satisfies the weight average molecular weight (Mw) of the compound represented by Chemical Formula 1 of 100 to 10,000. It is an integer. Preferably, n and k are independently integers of 3 to 8, and m independently satisfies the weight average molecular weight (Mw) of the compound represented by Chemical Formula 1 of 500 to 8,000. More preferably, n and k are independently integers of 5 to 6, and m is independently the weight average molecular weight (Mw) 900 of the compound represented by Chemical Formula 1. It is an integer satisfying ~ 6,000.

Here, the compound represented by the chemical formula 1 can be produced by polymerizing the copolymer represented by the following chemical formula 8 and alcohols;

In Formula 8, to no _{R 1 R} 3, _{R 5} and _{R 8} are each independently a hydrogen atom, Ri having 4 or less alkyl group or a C 5-24 aryl groups der, carbon, R _{4, R 6} and _{R 7,} each independently, having 4 or fewer alkylene group having a carbon or Ru number 5 to 24 amino arylene group der carbon. Preferably, the aryl group comprises one selected from the group consisting of a phenyl group, a biphenyl group, a naphthyl group, an anthracene group, a phenanthrene group, a pyrene group, a perylene group, a chrysene group, a cresol group and a fluorene group. But it may be. It is more preferably an alkyl group or a phenyl group having 1 or 2 carbon atoms, and even more preferably a methyl group.

Further, n and k are each independently an integer of 0 to 10, and m is an integer satisfying the weight average molecular weight (Mw) of the compound represented by the chemical formula 8 of 100 to 10,000.

Preferably, n and k are independently integers of 3 to 8, and m independently satisfies the weight average molecular weight (Mw) of the compound represented by Chemical Formula 1 of 500 to 8,000. More preferably, n and k are independently integers of 5 to 6, and m is independently the weight average molecular weight (Mw) 900 of the compound represented by Chemical Formula 1. It is an integer satisfying ~ 6,000.

According to the present invention, a coating agent for wafer processing containing the coating agent composition for wafer processing can be produced, and as shown in Table 5 below, the abrasion resistance may be 75% to 90%. Preferably, the abrasion resistance may be 77% to 90%, and more preferably 79% to 90%.

According to the present invention, the coating agent can be produced by a composition containing a polyurethane resin, a polar organic solvent, a surface adjusting additive, a fluidity adjusting agent, an adhesion accelerator and water, and the polyurethane is preferable. Resin 15.0 to 45.0% by weight, polar organic solvent 45.0 to 80.0% by weight, surface conditioning additive 0.0001 to 1% by weight, fluidity adjusting agent 0.0001 to 1% by weight, adhesion It can be produced containing 0.0001 to 1% by weight of an accelerator and 1.0 to 10% by weight of water.

Specifically, the polyurethane resin is a compound represented by the chemical formula 1, and may contain 15 to 45% by weight based on the total weight of the coating agent composition. It may preferably contain 20 to 40% by weight, more preferably 25 to 35% by weight. At this time, if the polyurethane resin content is less than 15% by weight, there is a problem that the coating is not properly performed, and if it exceeds 45% by weight, there is a problem that the coating becomes non-uniform. It is preferable to do so.

The polar organic solvent, which is one of the coating agent compositions of the present invention, plays a role of dissolving the polyurethane resin, and may contain 45 to 80% by weight based on the total weight of the coating agent composition. It may preferably contain 50 to 70% by weight, more preferably 55 to 65% by weight. At this time, if the content of the polar organic solvent is less than 45% by weight, there is a problem that the polyurethane resin is precipitated, and if it exceeds 80% by weight, there is a problem that the coating is not properly performed. Therefore, use within the above range. Is preferable.

The polar organic solvent can be used alone or in combination of two or more selected from alcohols, ketones and glycol ethers, preferably from alcohols and ketones. One selected type or a mixture of two or more types can be used, and more preferably, alcohols are used.

The surface adjusting additive, which is one of the coating agent compositions of the present invention, plays a role of imparting surface slipperiness after coating, and is 0.0001 to 1% by weight based on the total weight of the coating agent composition. May be included, preferably 0.01 to 1% by weight.

At this time, if the content of the surface adjusting additive is less than 0.0001% by weight, the slip property is insufficient and there is a problem that foreign matter adheres, and if it exceeds 1% by weight, the adhesion of the coating is lowered. Since there is a problem, it is preferable to use it within the above range. Preferably, as the surface conditioning additive, a silicon-based additive can be used, specifically, MODEREZ K-SE 305 (silicon-based), MODEREZ K-SL 106 (silicon-based), and MODEREZ of Protex International. K-SL 107 (silicon-based) or BYK-331, BYK-333 (silicon-based), BYK-348 (silicon-based), BYK-3455 (silicon-based) can be used.

The fluidity modifier, which is one of the coating agent compositions of the present invention, plays a role of adjusting the viscosity of the coating solution, and even if it contains 0.0001 to 1% by weight based on the total weight of the coating agent composition. It may and preferably contain 0.01 to 1% by weight. At this time, if the fluidity adjusting agent content is less than 0.0001% by weight, the viscosity is low and the coating thickness is thin, and if it exceeds 1% by weight, the viscosity is high and the coating is unevenly coated. Therefore, it is preferable to use within the above range. Then, as the fluidity adjusting agent, PROX A 300, PROX AM 162 S, SYNTHRO THIX 608 of Protex International, or BYK-405, BYK-420, BYK-7420 ES of BYK can be used.

The adhesion promoter, which is one of the coating agent compositions of the present invention, plays a role of improving the adhesion of the coating, and may contain 0.0001 to 1% by weight based on the total weight of the coating agent composition. , Preferably 0.01 to 1% by weight. At this time, if the content of the adhesion accelerator is less than 0.0001% by weight, there is a problem that the adhesion of the coating is lowered, and if it exceeds 1% by weight, there is a problem that the coating slip property is lowered. It is preferable to use in. Then, as the adhesion accelerator, BYK-4509 and BYK-4500 manufactured by BYK can be used.

Preferably, a method for producing a wafer processing coating agent containing the wafer processing coating agent composition and a method for producing the wafer processing coating agent containing the polyurethane may be included.

Specifically, as a method for producing the coating agent for wafer processing, a compound containing a diisocyanate group and a monomer represented by the following chemical formulas 4 and 5 are introduced into the following chemical formula 2 and the reaction vessel, and the first step is made. The first step of producing the polymer, the second step of reacting the first polymer with the monomer represented by the following chemical formula 6 to produce the second copolymer, and the second copolymer. , The third step of producing the third copolymer by reacting the monomer represented by the following chemical formula 7 and the reaction of alcohols and distilled water with the third copolymer are represented by the following chemical formula 1. The compound may include four steps of producing the compound, and five steps of mixing the surface adjusting additive, the fluidity adjusting agent, the adhesion accelerator, the polar organic solvent and water with the compound represented by the chemical formula 1. ..

At this time, the compound containing a diisocyanate group may be a monomer represented by the following chemical formula 3.

Here, in the first step, the polymers represented by the following chemical formulas 3, 4 and 5 are subjected to 1: 0.1 to 10: 1: 0.1 to 5 with respect to the following chemical formula 2. It can be introduced into a reaction vessel at a molar ratio of 0.0: 1: 1.0 to 10.0 to produce a first polymer. Preferably, the monomers represented by the following chemical formulas 3, 4 and 5 are subjected to 1: 0.1 to 5: 1: 0.1 to 2.5: 1: 1 with respect to the following chemical formula 2. It can be polymerized at a molar ratio of .5-5.

Further, the alcohols of the fourth stage can be selected from the group consisting of methanol, ethanol, propanol and butanol, and may be preferably ethanol.

In the chemical formula 2, R ₂ and R ₃ are independently hydrogen atoms, an alkyl group having 4 or less carbon atoms, or an aryl group having 5 to 24 carbon atoms, and R ₁ and R ₄ are respectively. Independently, it is an alkylene group having 4 or less carbon atoms or an arylene group having 5 to 24 carbon atoms, n and k are each independently an integer of 0 to 10, and m is independent. Therefore, it is an integer satisfying the weight average molecular weight (Mw) of Chemical Formula 2 of 100 to 10,000. Preferably, in Formula 2, R ₂ and R _3, to one free atoms are two alkyl group or a phenyl group, R ₁ and R ₄ are 1 carbon atoms to two alkylene groups or, It is a phenylene group, n and k are each independently an integer of 3 to 8, and m is an integer independently satisfying the weight average molecular weight (Mw) of Chemical Formula 2 of 500 to 7,000. is there. More preferably, n and k are each independently an integer of 5 to 6, and m is an integer independently satisfying the weight average molecular weight (Mw) of Chemical Formula 2 of 900 to 5,000. is there.

The compound represented by the chemical formula 2 is a precursor to be mixed for producing the compound represented by the chemical formula 1, has a structure containing two -OH at the end, and plays a role of influencing physical properties. To do.

In the above chemical formula 3, R ₁ to R ₃ are independently hydrogen atoms, aryl groups having 5 to 24 carbon atoms, or alkyl groups having 4 or less carbon atoms. Preferably, R ₁ to R ₃ are an alkyl group having 1 or 2 carbon atoms, or a phenyl group having 5 to 6 carbon atoms, and more preferably a methyl group.

The compound represented by the chemical formula 3 is isophorone diisocyanate, 4,4-dicyclohexylmethane diisocyanate (H12MDI), 1,4-cyclohexyldiisocyanide (CHDI) as an aliphatic diisocyanate, or 4 as an aromatic diisocyanate. , 4'-Diphenylmethane diisocyanate (MDI), 2,4- or 2,6-toluene diisocyanate (TDI), can be used alone or in combination of two or more, and the amount used is NCO / OH. It is used so that the molar ratio is 0.5 to 5.0, but if it is out of the range, polyurethane may not be sufficiently synthesized or the water dispersion stability may be lowered.

In the chemical formula 4, R ₁ is an aryl group having 5 to 24 carbon atoms or an alkyl group having 4 or less carbon atoms, but preferably R ₁ is an alkyl group having 1 or 2 carbon atoms or It is a phenyl group, more preferably a methyl group.

The compound represented by the chemical formula 4 is an ionic functional group, -OH forms a urethane bond and acts as a chain extender, and -COOH is represented by the following chemical formula 7 having an opposite charge. The polyurethane is imparted with hydrophilicity through an ionic bond with the compound, and an ionic prepolymer having a terminal isocyanate of the compound represented by the chemical formula 3 is reacted, neutralized, and then water-dispersed.

In the chemical formula 5, R ₁ is an aryl group having 5 to 24 carbon atoms or an alkyl group having 4 or less carbon atoms. Preferably, R ₁ is an alkyl group or a phenyl group having 1 or 2 carbon atoms, and more preferably a methyl group.

The compound represented by the chemical formula 5 is selected from the group consisting of distilled water, ethanol, hexane, and 1-methyl-2-pyrrolidinone (NMR) as a solvent for dissolving the compound represented by the chemical formula 4. Any one or more may be included. Preferably, the solvent may be a mixed solution of distilled water, ethanol, hexane and 1-methyl-2-pyrrolidinone (NMR). However, the solvent is not limited to the above description, and any solvent can be used as long as it can dissolve the compound represented by the chemical formula 4. More preferably, the solvent can be a mixture of distilled water and 95% ethanol in a 12: 1 to 10: 1 volume ratio.

In the above chemical formula 6, R ₁ to R ₃ are independently hydrogen atoms, alkyl groups having 4 or less carbon atoms, or aryl groups having 5 to 24 carbon atoms. Preferably, R ₁ to R ₃ are an alkyl group or a phenyl group having 1 or 2 carbon atoms, and more preferably a methyl group.

In the chemical formula 7, R ₁ to R ₃ are an aryl group having 5 to 24 carbon atoms or an alkyl group having 4 or less carbon atoms. Preferably, R ₁ to R ₃ are an alkyl group or a phenyl group having 1 or 2 carbon atoms, and more preferably a methyl group.

Preferably, in the method for producing the coating agent for wafer processing, the first polymer and the monomer represented by the chemical formula 6 have a weight ratio of 1: 0.1 to 5.0 and a second weight. The combination and the monomer represented by the chemical formula 7 have a weight ratio of 1: 0.1 to 5.0, and the third copolymer and the alcohols have a weight ratio of 1: 1.0 to 10.0. They can be manufactured by mixing them by weight. More preferably, the first polymer and the monomer represented by the chemical formula 6 have a weight ratio of 1: 0.3 to 3.0, and the second polymer and the simple polymer represented by the chemical formula 7 have a weight ratio of 1: 0.3 to 3.0. The dimer may be produced by mixing at a weight ratio of 1: 0.3 to 3.0, and the third copolymer and the alcohols at a weight ratio of 1: 3.0 to 7.0, respectively. it can.

On the other hand, as a manufacturing process for producing a coating agent containing the coating agent composition for wafer processing, a first step of coating the wafer surface with a coating agent, a second step of arranging the wafer in a pulling device, and a second step. A third step of dicing the wafer, a fourth step of selecting and arranging only non-defective parts among the parts cut in the dicing step, and a fifth step of peeling the coating agent composition from the selected non-defective products. And a sixth step of inspecting a non-defective product from which the coating agent composition has been peeled off may be included.

The coating agent produced by using such a coating agent composition for wafer processing containing polyurethane is not applied only to the semiconductor process, and damage due to scratches on the surface or contamination of foreign matter may occur in the manufacturing process. It is also preferably applied in possible glass manufacturing processes.

Here, in the first step, the step of coating the wafer surface with the compound represented by the chemical formula 1 is carried out at 0 to 50 ° C. for 1 to 60 seconds, preferably 20 to 50 at 15 to 35 ° C. Can be done for seconds.

On the other hand, the present invention provides a wafer processing release agent composition or a wafer processing release agent for peeling the above-mentioned wafer processing coating agent, and the wafer processing release agent composition of the present invention has the following chemical formula 9. The compound represented by, the compound represented by the following chemical formula 10, the compound represented by the following chemical formula 11, and the surfactant may be contained.

In the chemical formula 9, R ₁ and R ₂ are each independently a hydrogen atom, an aryl group having 5 to 24 carbon atoms, or an alkyl group having 4 or less carbon atoms. Preferably, the aforementioned R ₁ and R ₂ are an alkyl group or a phenyl group having 1 or 2 carbon atoms, and more preferably a methyl group;

In the chemical formula 10, R ₁ is independently a hydrogen atom, an aryl group having 5 to 24 carbon atoms, or an alkyl group having 10 or less carbon atoms, but preferably, the R ₁ is a carbon number of carbon atoms. It is one or two alkyl or phenyl groups, more preferably a methyl group;

In the chemical formula 11, R ₁ to R ₄ are independently hydrogen atoms, aryl groups having 5 to 24 carbon atoms, or alkyl groups having 4 or less carbon atoms. Preferably, the above-mentioned R ₁ to R ₄ are an alkyl group or a phenyl group having 1 to 2 carbon atoms, and more preferably a methyl group.

Specifically, the release agent composition comprises 30 to 90% by weight of the compound represented by the chemical formula 9, 5 to 60% by weight of the compound represented by the chemical formula 10, and 1 to 30% by weight of the compound represented by the chemical formula 11. %, And 0.1 to 10% by weight of the surfactant may be contained. Preferably, the release agent composition comprises 30 to 70% by weight of the compound represented by the chemical formula 9, 15 to 50% by weight of the compound represented by the chemical formula 10, and 10 to 20% by weight of the compound represented by the chemical formula 11. And 0.1 to 1% by weight of the surfactant, more preferably, the release agent composition contains 40 to 55% by weight of the compound represented by the chemical formula 9, and 25 to 55% by weight of the compound represented by the chemical formula 10. It may contain 43% by weight, 15 to 20% by weight of the compound represented by Chemical Formula 11, and 0.1 to 1% by weight of the surfactant. At this time, if the compound represented by the chemical formula 9 is less than 30% by weight, the water solubility is lowered and the release agent is not removed by water. If it exceeds 90% by weight, the peeled coating agent is removed. Will occur. If the amount of the compound represented by the chemical formula 10 is less than 5% by weight, the problem that the peeled coating agent is not dissolved and precipitates occurs, and if it exceeds 60% by weight, the water solubility is lowered and the release agent is used. There is a problem that it is not removed by water. In the chemical formula 11, if the compound is less than 1% by weight, there is a problem that the peeling performance is lowered, and if it exceeds 30% by weight, the alkalinity is excessively strong and a corrosion problem occurs. If the amount of the surfactant is less than 0.1% by weight, there is a problem that the detergency and penetrating power are lowered, and if it exceeds 1% by weight, there is a problem that a lot of bubbles are generated.

Further, the surfactant has an average HLB (hydrophile-lipophile balance) value of 10 to 15, and the surfactant may contain a nonionic surfactant, an anionic surfactant, or a mixture thereof. Good. At this time, if the HLB value is less than 10, there may be a problem that the detergency is lowered, and if it is more than 15, the water solubility is lowered and the surfactant may not be emulsified.

Here, the nonionic surfactant is an alkylpolyglucoside, a polyoxyalkylene alkyl ether, a polyoxyalkylene alkyl phenyl ether, a polyoxyethylene alkyl octyl ether, a polyoxyethylene polyoxypropylene block copolymer, a polyethylene glycol fatty acid ester. And one or more selected from the group consisting of polyoxyethylene sorbitan fatty acid esters, the anionic surfactants include alkyl ether sulfates, alkyl sulfates, alkylbenzene sulfonates, alkyl sulfosuccinates, alkyl ethers. It may contain one or more selected from the group composed of phosphate, alkyl phosphate, alkylbenzene phosphate, and salts thereof. Preferably, the nonionic surfactant may be an alkylpolyglucoside and a polyoxyethylene polyoxypropylene block copolymer, and the anionic surfactant may be an alkyl ether phosphate and an alkyl phosphate. More preferably, the nonionic surfactant may be an alkylpolyglucoside and the anionic surfactant may be an alkyl ether phosphate.

The present invention also includes a wafer processing release agent containing the wafer processing release agent composition for removing the coating agent.

Here, the release agent can be effectively applied to remove the coating agent containing the compound represented by the chemical formula 1, the absolute viscosity of the release agent is 80 to 120 cps, and an effective alkali. The degree is 20-35 and the pH may be 8-14. Preferably, the absolute viscosity of the release agent is 90 to 110 cps, the effective alkalinity is 25 to 30, the pH may be 9 to 13, and even more preferably, the absolute viscosity of the release agent. Is 95-105 cps, the effective alkalinity is 27, and the pH may be 10-12. At this time, if the absolute viscosity is less than 80 or more than 120, there is a problem that peeling is not performed properly, and if the effective alkalinity is less than 20, there is a problem that the peeling performance is deteriorated. However, if it exceeds 35, a problem of causing corrosion may occur. If the pH is less than 8, the problem of lengthening the peeling time occurs, and if it exceeds 14, the solution becomes a strongly alkaline solution, which may cause a problem in wastewater treatment.

The present invention comprises a first step of coating the wafer surface and forming a coating layer using a coating agent containing the compound represented by the above-mentioned chemical formula 1, and a second step of arranging the wafer in a pulling device. A third step of dicing the wafer, a fourth step of selecting and arranging only non-defective parts among the parts cut in the dicing step, and a release agent for wafer processing from the selected non-defective products. Provided is a wafer processing step including a fifth step of peeling using the above method and a sixth step of inspecting a good product from which the coating layer has been peeled.

Here, the fifth step can be performed at a temperature of 10 ° C. to 50 ° C. for 1 to 10 minutes, preferably at a temperature of 20 ° C. to 40 ° C. for 1 to 5 minutes.

The fifth step may include a method of immersing the wafer on which the coating layer is formed in a container in which the release agent is injected to remove the wafer.

Hereinafter, the present invention will be described in more detail with reference to the following examples. The following examples are presented only to aid in the understanding of the present invention and do not limit the scope of the present invention.

<Example>
<Example 1. Manufacture of protective coating agents for wafer processing>
At room temperature, 1 g of the compound represented by the following chemical formula 4-1; 8 g of the compound represented by the following chemical formula 5-1; 25 g of the compound represented by the following chemical formula 2-1; After mixing 0.03 g of dibutyltin dilaurate (DBTL) as a catalyst, the temperature was raised, and the mixture was stirred at a temperature of 75 ° C. and 500 rpm for 2 hours to prepare a first copolymer in a transparent solution state. Then, the first copolymer was cooled to a temperature of 50 ° C. and solidified into a viscous dough, and then 1.53 g of the compound represented by the following chemical formula 6-1 was stirred at 500 rpm for 2 hours in order. , The second copolymer was produced, and 3.52 g of the compound represented by the following chemical formula 7-1 was stirred at 500 rpm for 1 hour in the second copolymer to produce the third copolymer.

Then, the third copolymer was distilled at a temperature of 50 ° C. using 100 ml of distilled water, stirred at 1,000 rpm for 30 minutes, and then 2.76 g of ethanol was further mixed at a temperature of 50 ° C. and 500 rpm. After stirring for 1 hour, the mixture was cooled to room temperature.

Finally, the final polymer cooled to room temperature is left in a foamed state for 12 hours to separate the foam from the liquid layer, and then the foam of the final polymer is removed with a spoon to remove the foam of the final polymer. A polyurethane resin represented by the following chemical formula 1-1 was obtained.

35 g of the polyurethane resin thus synthesized is added to 54 g of dimethyl sulfoxide (DMSO), and while stirring, 0.3 g of a surface adjusting additive, 0.2 g of a fluidity adjusting agent, 0.5 g of an adhesion accelerator, and 10 g of water are added. After mixing and stirring for about 1 hour, the product was filtered to produce a final coating having a composition ratio as shown in Table 2 below.

In the above chemical formula 1-1, R ₁ to R ₃ , R ₅ , R ₆ and R ₈ are -CH ₃ , R ₄ and R ₇ are -CH _2- , and n and k are independent of each other. And m is an integer that independently satisfies the weight average molecular weight (Mw) 3,100-3,200 of Chemical Formula 1-1;

前記化学式２−１で、Ｒ_１及びＲ_４は、−ＣＨ_２−、Ｒ_２及びＲ_３は、−ＣＨ_３である。

In the chemical formula 2-1 above, R ₁ and R ₄ are -CH _2- , and R ₂ and R ₃ are -CH ₃ .

前記化学式３−１で、Ｒ_１ないしＲ_３は、−ＣＨ_３である；

In the above chemical formula 3-1 R ₁ to R ₃ are -CH ₃ ;

前記化学式４−１で、Ｒ_１は、−ＣＨ_３である；

In the above chemical formula 4-1 R ₁ is −CH ₃ ;

前記化学式５−１で、Ｒ_１は、−ＣＨ_３である；

In the chemical formula 5-1 R ₁ is −CH ₃ ;

前記化学式６−１で、Ｒ_１ないしＲ_３は、−ＣＨ_３である；

In the formula 6-1 above, R ₁ to R ₃ are -CH ₃ ;

前記化学式７−１で、Ｒ_１ないしＲ_３は、−ＣＨ_３である。

In the chemical formula 7-1, R ₁ to R ₃ are −CH ₃ .

<Example 2>
It was produced in the same manner as in Example 1, but 30 g, 10 g, 1 g, and 8 g of the monomers represented by the chemical formulas 2-1 to 5-1 were added as shown in Table 1 below, respectively, and the weight average was added. After producing a polyurethane resin having a molecular weight (Mw) of 3,750, a coating agent having a composition ratio as shown in Table 2 below was produced.

<Example 3>
It was produced in the same manner as in Example 1, but the monomers represented by the chemical formulas 2-1 to 5-1 were added with 35 g, 10 g, 1 g, and 8 g, respectively, as shown in Table 1 below, and weight averaged. After producing a polyurethane resin having a molecular weight (Mw) of 4,370, a coating agent having a composition ratio as shown in Table 2 below was produced.

<Comparative example 1>
Polycaprolactone (PCL) to 1,6-hexamethylene diisocyanate (HDI) and the monomers represented by the chemical formulas 4-1 to 5-1 were prepared in the same manner as in Example 1 in Table 3 below. As described above, 30 g, 10 g, 1 g, and 8 g, respectively, were added to produce a polyurethane resin having a weight average molecular weight (Mw) of 3,750, and then a coating agent having a composition ratio as shown in Table 4 below was produced.

<Comparative example 2>
Although it was produced in the same manner as in Example 1, 30 g of polycaprolactone (PCL) and the monomers represented by the above chemical formulas 3-1 and 4-1 and chemical formula 5-1 were added as shown in Table 3 below. After adding 10 g, 1 g, and 8 g to produce a polyurethane resin having a weight average molecular weight (Mw) of 3,750, a coating agent having a composition ratio as shown in Table 4 below was produced.

<Comparative example 3>
Polytetramethylene ether glycol (PTMG), 1,6-hexamethylene diisocyanate (HDI), and the monomers represented by the chemical formulas 4-1 and 5-1 were prepared in the same manner as in Example 1. As shown in Table 3 below, 30 g, 10 g, 1 g, and 8 g, respectively, were added to produce a polyurethane resin having a weight average molecular weight (Mw) of 3,750, and then a coating agent having a composition ratio as shown in Table 4 below was prepared. Manufactured.

<Comparative example 4>
It was produced in the same manner as in Example 1, but 30 g, 10 g, 1 g, and 8 g of polytetramethylene ether glycol (PTMG) and the monomers represented by the above chemical formulas 3-1 and 4-1 and chemical formula 5-1 were used, respectively. After producing a polyurethane resin having a weight average molecular weight (Mw) of 3,750, a coating agent having a composition ratio as shown in Table 4 below was produced.

<Comparative example 5>
Although it was produced in the same manner as in Example 1, it was produced in the same manner as in Example 1, but a coating agent having a composition ratio as shown in Table 4 below was produced.

<Comparative Example 6>
It was produced in the same manner as in Example 1, but it was produced in the same manner as in Example 1, but a coating agent having a composition ratio as shown in Table 4 below was produced.

[Experimental example]
<Experimental example 1>
Using the coating agents produced in Examples 1 to 3 and Comparative Examples 1 to 6, the wafers were spin-coated and then thermoset at 120 ° C. for 1 minute. On the other hand, the following physical properties were measured, and the results are shown in Table 5.

<Experimental example 2>
Using the coating agents produced in Comparative Examples 1 to 6, the wafers were spin-coated and then thermoset at 120 ° C. for 1 minute. On the other hand, the following physical properties were measured, and the results are shown in Table 5.

* Evaluation of physical properties 1. Pencil hardness A pencil for measuring pencil hardness was placed in a hardness measuring device (CORE TECH) at an angle of 45 °, and a constant load (1 kg) was applied while pressing the pencil for measurement. As the pencil, a Mitsubishi pencil was used, and a pencil showing hardness such as H-9H, F, HB, and B-6B was used.

2. Adhesive strength After making a grid-like scratch on the coating layer cured based on ASTM D 3359 with a cutter, 3M tape is sufficiently adhered to it and pulled apart several times with a constant force to separate the coating layer and the base material. The degree of adhesion was observed. The surface of the coated support was marked with a cross at 11X11 at 1 mm intervals to make 100 squares, and tape (3M tape) was attached onto the squares, which were then pulled sharply to evaluate the surface. .. If the number of scales remaining at this time is 100, 5B, 95 or more is 4B, 85 or more is 3B, 65 or more is 2B, 35 or more is 1B, and less. It was shown as 0B.

3. 3. Abrasion resistance In order to measure the abrasion resistance of the coated film, a Taber abraser (QM600T, Qmesys) was used, and a load of 500 g was applied to each, and the coated film was abraded 50 to 300 times at a speed of 70 rpm. Later, a UV-visible spectrometer (UV-2450, Shimadzu) was used to measure and determine the transmittance in the 600 nm region. The degree of abrasion resistance of the coating film is determined by defining the transmittance loss% as follows, and the larger the transmittance loss%, the poorer the abrasion resistance of the sample. To do.
Transmittance loss% = 100 (BA) / B
A = Transmittance (%) at 600 nm wavelength after measurement of sample wear resistance
B = Transmittance (%) at 600 nm wavelength before measurement of sample wear resistance

As shown in Table 5, in the case of the coating agents produced by Examples 1 to 3, the external pencil hardness and adhesive strength are significantly improved as compared with the coating agents produced by Comparative Examples 1 to 6. Can be confirmed.

Further, as shown in FIG. 1, in the pattern by FT-IR, the compound represented by the chemical formula 1 according to the present invention does not finally contain an NCO group after the reaction is completed. Adhesive components are removed from the outer surface, and contamination due to the inflow of foreign matter can be prevented.

Although the present invention has been described in detail with reference to preferred examples and experimental examples, the present invention is not limited to the above-mentioned examples and experimental examples, and is within the technical idea and scope of the present invention. , Various modifications and changes are possible by those skilled in the art.

[Examples 4 to 6]
Manufacture of release agent for wafer processing An uncleaned pattern-attached wafer A having a via hole having a diameter of 0.25 μm and an uncleaned pattern-attached wafer B having an aluminum (Al) wiring having a wiring width of 0.25 μm are 1 cm square. After preparing the wafer, the compounds represented by the following chemical formulas 9-1, 10-1 and 11-1 were adjusted to have the composition shown in Table 6 below, and according to Examples 4 to 6. A release agent was manufactured.

前記化学式９−１で、Ｒ_１及びＲ_２は、−ＣＨ_３である；

In the chemical formula 9-1, R ₁ and R ₂ are -CH ₃ ;

前記化学式１０−１で、Ｒ_１は、−ＣＨ_３である；

In the chemical formula 10-1, R ₁ is -CH ₃ ;

前記化学式１１−１で、Ｒ_１ないしＲ_４は、−ＣＨ_３である。

In the above chemical formula 11-1, R ₁ to R ₄ are −CH ₃ .

[Comparison example]
<Comparative Example 7>
A release agent was produced in the same manner as in Examples 4 to 6, but the composition of tetrahydrofurfuryl alcohol (THFA) 55 g, butyl cellosolve (BC) 40 g, and tetramethylammonium hydroxide (TMAH) 5 g was as shown in Table 6 below. A release agent for wafer processing was manufactured by charging at a ratio.

<Comparative Example 8>
A release agent was produced in the same manner as in Examples 4 to 6, but 25 g of tetrahydrofurfuryl alcohol (THFA), 60 g of butyl cellosolve (BC), and 15 g of tetramethylammonium hydroxide (TMAH) were added to the composition as shown in Table 6 above. A release agent for wafer processing was manufactured by charging at a ratio.

<Comparative Examples 9 and 10>

A release agent was produced in the same manner as in Examples 4 to 6, but the compounds represented by the above-mentioned chemical formulas 8-1, 9-1 and 10-1 were arranged so as to have the compositions shown in Table 6 below, respectively. And produced a release agent.

[Experimental example]
<Experimental example 3>
In order to confirm the peeling performance of the release agent compositions of Examples 4 to 6 and Comparative Examples 7 to 10 with respect to the coating agent, the coating agent prepared in Example 1 above was applied to the wafer surface. After being applied to a thickness of 1 μm, it was heat-cured. In order to peel off the thermosetting coating agent, it is immersed in the release agents produced in Examples 4 to 6 and Comparative Examples 7 to 10 for 1 minute at room temperature at 20 to 40 ° C. for 1 to 5 minutes to increase the peeling force. evaluated. Then, in order to remove the release agent remaining on the specimen, each was washed with ultrapure water for 20 seconds and then dried with nitrogen. The dried specimen was visually observed, and the removal and residue of the coating agent were confirmed under a microscope. The results are shown in Table 7 below.

As shown in Table 7 and FIGS. 4 and 5, when the release agents of Examples 4 to 6 were used, no coating agent residue remained on the wafer surface, while Comparative Examples 7 to 10 were used. When this was done, it was found that a considerable amount of coating agent residue remained.

<Experimental Example 4>
A mount tape using an acrylic polymer was adhered to a donut-shaped SUS ring. On a hot plate between 35 and 40, 3 ml of the release liquids of Examples 4 to 6 and Comparative Examples 7 to 8 was dropped onto the adhesive portion where the mount tape was exposed, and after 40 minutes, the degree of damage to the mount tape was observed. The observations were made and the results are shown in Table 8 below.

As shown in Table 8 above, when Examples 4 to 6 are used, the mount tape swells because unnecessary peeling stress is not applied to the mount tape held in the center of the ring frame via the adhesive. It can be seen that the mounting tape and the wafer can be prevented from being damaged without deformation such as being damaged.

Although the present invention has been described in detail with reference to preferred examples and experimental examples, the present invention is not limited to the above-mentioned examples and experimental examples, and is within the technical idea and scope of the present invention. Various modifications and changes can be made by those skilled in the art.

Claims (8)

Weight average molecular weight (Mw) of 100 to 10,000, 15 to 45% by weight of the polyurethane resin containing the compound represented by the chemical formula 1, 45 to 80% by weight of the polar organic solvent, 0.0001 to 1% by weight of the surface adjusting additive. %, fluidity modifier 0.0001 wt%, the adhesion promoter 0.0001 wt% and the wafer processing coating Additives Narubutsu which comprises 1 to 10% by weight of water.

In the above chemical formula 1, R ₁ to R ₃ , R ₅ and R ₈ are independently hydrogen atoms, alkyl groups having 4 or less carbon atoms, or aryl groups having 5 to 24 carbon atoms, and R ₄ , R ₆ and R ₇ are independently alkylene groups having 4 or less carbon atoms or arylene groups having 5 to 24 carbon atoms, and n and k are independently 0 to 10, respectively. It is an integer, and m is an integer that independently satisfies the weight average molecular weight of the compound represented by the chemical formula 1. The above-mentioned R ₁ to R ₃ , R ₅ and R ₈ are independently substituted or unsubstituted alkyl groups having 4 or less carbon atoms, or substituted or unsubstituted aryl groups, and the aryl group is a substituted or unsubstituted aryl group. Includes one selected from the group consisting of a phenyl group, a biphenyl group, a naphthyl group, an anthracene group, a phenanthrene group, a pyrene group, a perylene group, a chrysen group, a cresol group and a fluorene group.
The above-mentioned R ₄ , R ₆ and R ₇ are independently substituted or unsubstituted alkylene groups having 4 or less carbon atoms, or substituted or unsubstituted arylene groups, and the arylene group is a phenylene group. The wafer processing according to claim 1 , further comprising one selected from the group consisting of a biphenylene group, a naphthylene group, an anthracenylene group, a phenanthrenylene group, a pyrenylene group, a peryleneylene group and a chrysenylene group. Coating agent composition. A coating agent for wafer processing, which comprises the coating agent composition for wafer processing according to claim 1 or 2. A wafer processing release agent composition that removes the coating agent formed on the wafer surface.
30 to 90% by weight of the compound represented by the following chemical formula 9, 5 to 60% by weight of the compound represented by the chemical formula 10, 1 to 30% by weight of the compound represented by the chemical formula 11 , and 0.1 to 1 % by weight of the surfactant. Including %
The coating agent is a release agent composition for wafer processing, which comprises a compound represented by the following chemical formula 1.

In the above chemical formula 9, R ₁ and R ₂ are independently hydrogen atoms, aryl groups having 5 to 24 carbon atoms, or alkyl groups having 4 or less carbon atoms;

In the above chemical formula 10, R ₁ is independently a hydrogen atom, an aryl group having 5 to 24 carbon atoms, or an alkyl group having 10 or less carbon atoms;

In Formula 11, to no R ₁ R ₄ are each independently a hydrogen atom, the number 5 to 24 aryl groups carbons, or by the number 4 or less alkyl group having a carbon;

In the above chemical formula 1, R ₁ to R ₃ , R ₅ and R ₈ are independently hydrogen atoms, alkyl groups having 4 or less carbon atoms, or aryl groups having 5 to 24 carbon atoms , and R ₄ , R ₆ and R ₇ are independently alkylene groups having 4 or less carbon atoms or arylene groups having 5 to 24 carbon atoms , and n and k are independently 0 to 10, respectively. It is an integer, and m is an integer satisfying the weight average molecular weight (Mw) of the compound represented by Chemical Formula 1 of 100 to 10,000. The surfactant has an average HLB value is 10 to 15, wherein the surfactant is a nonionic surfactant, to claim 4, characterized in that it comprises an anionic field surfactant or mixtures thereof, The release agent composition for wafer processing described. The nonionic surfactants include alkyl polyglucoside, polyoxyalkylene alkyl ether, polyoxyalkylene alkyl phenyl ether, polyoxyethylene alkyl octyl ether, polyoxyethylene polyoxypropylene block copolymer, polyethylene glycol fatty acid ester and polyoxy. Contains one or more selected from the group composed of ethylene sorbitan fatty acid esters.
The anionic surfactant is selected from the group composed of alkyl ether sulfates, alkyl sulfates, alkylbenzene sulfonates, alkyl sulfosuccinates, alkyl ether phosphates, alkyl phosphates, alkylbenzene phosphates, and salts thereof. The release agent composition for wafer processing according to claim 5 , which comprises seeds or more. A wafer processing release agent containing the wafer processing release agent composition according to any one of claims 4 to 6. The release agent for wafer processing according to claim 7 , wherein the release agent has an absolute viscosity of 80 to 120 cps, an effective alkalinity of 20 to 35, and a pH of 8 to 14.

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