KR100326881B1 - 액정표시소자 및 그 제조방법 - Google Patents
액정표시소자 및 그 제조방법 Download PDFInfo
- Publication number
- KR100326881B1 KR100326881B1 KR1019990044791A KR19990044791A KR100326881B1 KR 100326881 B1 KR100326881 B1 KR 100326881B1 KR 1019990044791 A KR1019990044791 A KR 1019990044791A KR 19990044791 A KR19990044791 A KR 19990044791A KR 100326881 B1 KR100326881 B1 KR 100326881B1
- Authority
- KR
- South Korea
- Prior art keywords
- liquid crystal
- pixel electrode
- data line
- gate line
- organic insulating
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 17
- 239000010408 film Substances 0.000 claims description 47
- 230000003071 parasitic effect Effects 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 11
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 5
- 230000007547 defect Effects 0.000 abstract description 6
- 238000005530 etching Methods 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 230000001681 protective effect Effects 0.000 description 29
- 238000002161 passivation Methods 0.000 description 19
- 210000004027 cell Anatomy 0.000 description 13
- 239000011159 matrix material Substances 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 210000002858 crystal cell Anatomy 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990044791A KR100326881B1 (ko) | 1999-10-15 | 1999-10-15 | 액정표시소자 및 그 제조방법 |
| GB0025181A GB2357624B (en) | 1999-10-15 | 2000-10-13 | Liquid crystal display device and method of fabricating the same |
| US09/689,599 US6970221B1 (en) | 1999-10-15 | 2000-10-13 | Liquid crystal display device and method of fabricating the same |
| JP2000315977A JP2001188256A (ja) | 1999-10-15 | 2000-10-16 | 液晶表示装置とその製造方法（ＬｉｑｕｉｄＣｒｙｓｔａｌＤｉｓｐｌａｙａｎｄＦａｂｒｉｃａｔｉｏｎＭｅｔｈｏｄＴｈｅｒｅｏｆ） |
| FR0013233A FR2799869B1 (fr) | 1999-10-15 | 2000-10-16 | Dispositif d'affichage a cristal liquide et son procede de fabrication |
| DE10051172A DE10051172A1 (de) | 1999-10-15 | 2000-10-16 | Flüssigkristallanzeigegerät und Herstellungsverfahren desselben |
| JP2009040362A JP5036745B2 (ja) | 1999-10-15 | 2009-02-24 | 液晶表示装置とその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990044791A KR100326881B1 (ko) | 1999-10-15 | 1999-10-15 | 액정표시소자 및 그 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20010037335A KR20010037335A (ko) | 2001-05-07 |
| KR100326881B1 true KR100326881B1 (ko) | 2002-03-13 |
Family
ID=19615531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019990044791A KR100326881B1 (ko) | 1999-10-15 | 1999-10-15 | 액정표시소자 및 그 제조방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6970221B1 (fr) |
| JP (2) | JP2001188256A (fr) |
| KR (1) | KR100326881B1 (fr) |
| DE (1) | DE10051172A1 (fr) |
| FR (1) | FR2799869B1 (fr) |
| GB (1) | GB2357624B (fr) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100720099B1 (ko) | 2001-06-21 | 2007-05-18 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 그의 제조 방법 |
| KR20030028976A (ko) * | 2001-10-05 | 2003-04-11 | 비오이 하이디스 테크놀로지 주식회사 | 기생캐패시터 구조를 갖는 액정표시장치 |
| KR100493866B1 (ko) * | 2002-05-20 | 2005-06-10 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 스페이서 형성방법 |
| KR20030093519A (ko) | 2002-06-03 | 2003-12-11 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 어레이 기판 |
| JP4784382B2 (ja) | 2005-09-26 | 2011-10-05 | ソニー株式会社 | 液晶表示装置 |
| KR101160489B1 (ko) | 2006-04-07 | 2012-06-26 | 엘지디스플레이 주식회사 | 박막트랜지스터 어레이기판과 그 제조방법 |
| KR101427584B1 (ko) * | 2008-01-22 | 2014-08-08 | 삼성디스플레이 주식회사 | 표시 장치 |
| KR101699901B1 (ko) | 2010-07-09 | 2017-01-26 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 |
| WO2012172617A1 (fr) * | 2011-06-17 | 2012-12-20 | パナソニック株式会社 | Transistor à couche mince et procédé de fabrication d'un transistor à couche mince |
| KR20140061030A (ko) | 2012-11-13 | 2014-05-21 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| KR20150058609A (ko) | 2013-11-18 | 2015-05-29 | 삼성디스플레이 주식회사 | 표시 장치 |
| KR102102155B1 (ko) * | 2013-12-23 | 2020-05-29 | 엘지디스플레이 주식회사 | 액정표시장치 |
| CN108510949B (zh) | 2017-02-28 | 2019-09-20 | 合肥京东方光电科技有限公司 | 一种液晶显示面板、液晶显示装置及其驱动方法 |
| CN113485046B (zh) * | 2021-07-23 | 2022-08-02 | 武汉华星光电技术有限公司 | 显示面板及显示装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05173178A (ja) * | 1991-12-25 | 1993-07-13 | Seiko Epson Corp | アクティブマトリクス型液晶表示装置 |
| KR970011972A (ko) * | 1995-08-11 | 1997-03-29 | 쯔지 하루오 | 투과형 액정 표시 장치 및 그 제조 방법 |
| KR970071092A (ko) * | 1996-04-08 | 1997-11-07 | 구자홍 | 액정표시장치의 제조방법 및 액정표시장치의 구조 |
| US5955744A (en) * | 1995-06-06 | 1999-09-21 | Ois Optical Imaging Systems, Inc. | LCD with increased pixel opening sizes |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5032883A (en) * | 1987-09-09 | 1991-07-16 | Casio Computer Co., Ltd. | Thin film transistor and method of manufacturing the same |
| JP3133140B2 (ja) * | 1992-04-01 | 2001-02-05 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JPH06202076A (ja) * | 1992-12-29 | 1994-07-22 | Canon Inc | アクティブマトリクス型液晶表示装置及びその駆動方法 |
| US5994721A (en) * | 1995-06-06 | 1999-11-30 | Ois Optical Imaging Systems, Inc. | High aperture LCD with insulating color filters overlapping bus lines on active substrate |
| JP3646999B2 (ja) * | 1995-09-28 | 2005-05-11 | シャープ株式会社 | 透過型液晶表示装置 |
| KR100283733B1 (ko) * | 1995-10-16 | 2001-03-02 | 마찌다 가쯔히꼬 | 액티브 매트릭스형 액정 표시 장치 및 그 단선 수정 방법 |
| JP3199221B2 (ja) * | 1996-02-27 | 2001-08-13 | シャープ株式会社 | 液晶表示装置およびその製造方法 |
| JPH1048610A (ja) * | 1996-07-31 | 1998-02-20 | Furontetsuku:Kk | 液晶表示素子 |
| TW373114B (en) * | 1996-08-05 | 1999-11-01 | Sharp Kk | Liquid crystal display device |
| JP3919900B2 (ja) * | 1997-09-19 | 2007-05-30 | 株式会社半導体エネルギー研究所 | 液晶表示装置およびその作製方法 |
| US6359672B2 (en) * | 1997-10-20 | 2002-03-19 | Guardian Industries Corp. | Method of making an LCD or X-ray imaging device with first and second insulating layers |
| US6011274A (en) | 1997-10-20 | 2000-01-04 | Ois Optical Imaging Systems, Inc. | X-ray imager or LCD with bus lines overlapped by pixel electrodes and dual insulating layers therebetween |
-
1999
- 1999-10-15 KR KR1019990044791A patent/KR100326881B1/ko not_active IP Right Cessation
-
2000
- 2000-10-13 US US09/689,599 patent/US6970221B1/en not_active Expired - Lifetime
- 2000-10-13 GB GB0025181A patent/GB2357624B/en not_active Expired - Lifetime
- 2000-10-16 JP JP2000315977A patent/JP2001188256A/ja active Pending
- 2000-10-16 DE DE10051172A patent/DE10051172A1/de not_active Ceased
- 2000-10-16 FR FR0013233A patent/FR2799869B1/fr not_active Expired - Lifetime
-
2009
- 2009-02-24 JP JP2009040362A patent/JP5036745B2/ja not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05173178A (ja) * | 1991-12-25 | 1993-07-13 | Seiko Epson Corp | アクティブマトリクス型液晶表示装置 |
| US5955744A (en) * | 1995-06-06 | 1999-09-21 | Ois Optical Imaging Systems, Inc. | LCD with increased pixel opening sizes |
| KR970011972A (ko) * | 1995-08-11 | 1997-03-29 | 쯔지 하루오 | 투과형 액정 표시 장치 및 그 제조 방법 |
| KR970071092A (ko) * | 1996-04-08 | 1997-11-07 | 구자홍 | 액정표시장치의 제조방법 및 액정표시장치의 구조 |
Also Published As
| Publication number | Publication date |
|---|---|
| US6970221B1 (en) | 2005-11-29 |
| JP2001188256A (ja) | 2001-07-10 |
| GB2357624B (en) | 2003-02-19 |
| FR2799869A1 (fr) | 2001-04-20 |
| GB2357624A (en) | 2001-06-27 |
| JP2009151328A (ja) | 2009-07-09 |
| FR2799869B1 (fr) | 2006-08-04 |
| JP5036745B2 (ja) | 2012-09-26 |
| DE10051172A1 (de) | 2001-05-17 |
| GB0025181D0 (en) | 2000-11-29 |
| KR20010037335A (ko) | 2001-05-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5036745B2 (ja) | 液晶表示装置とその製造方法 | |
| US6091466A (en) | Liquid crystal display with dummy drain electrode and method of manufacturing same | |
| US7554630B2 (en) | Liquid crystal display device having common line parallel to and between gate line and pixel electrode with light shield projecting from common line parallel to data line and overlapping area between data line and pixel electrode | |
| US6597420B2 (en) | Liquid crystal display device having color film on a first substrate and a method for manufacturing the same | |
| US6795142B2 (en) | Liquid crystal display device having first color pixel with different Channel width/length ratio than second color pixel | |
| EP0725301B1 (fr) | Appareil d'affichage à cristaux liquides à matrice active avec électrode étanche à la lumière, connectée à un potentiel indépendant | |
| US8411216B2 (en) | Active matrix substrate, liquid crystal panel, liquid crystal display unit, liquid crystal display device, television receiver, and active matrix substrate manufacturing method | |
| US7671931B2 (en) | Liquid crystal display device and method of fabricating the same | |
| KR20010015187A (ko) | 박막 트랜지스터 어레이 및 그 제조 방법 | |
| CA2022613A1 (fr) | Fabrication d'un afficheur matriciel actif a cristaux liquides | |
| CN108732840A (zh) | 阵列基板及其制作方法 | |
| US6900871B1 (en) | Thin film transistor substrate of liquid crystal display and method of manufacture | |
| JPH0713196A (ja) | アクティブマトリックス型液晶表示装置 | |
| US6806935B2 (en) | In-plane switching mode liquid crystal display device having common lines crossing gate links | |
| KR100443828B1 (ko) | 액정표시소자 및 그의 제조방법 | |
| KR100623443B1 (ko) | 멀티 도메인 액정 표시소자 | |
| US20050140852A1 (en) | Liquid crystal display and fabrication method thereof | |
| CN107479291B (zh) | 液晶显示面板的制作方法及液晶显示面板 | |
| KR100430086B1 (ko) | 액정패널 및 그 제조방법 | |
| KR100606962B1 (ko) | 액정표시장치 및 그 제조방법 | |
| JPH08166599A (ja) | 液晶表示装置 | |
| KR100917003B1 (ko) | 액정표시장치 | |
| KR20050002410A (ko) | 액정 표시 장치 | |
| KR200357330Y1 (ko) | 저소비전력의 박막 트랜지스터 액정표시장치 | |
| KR100205258B1 (ko) | 액정표시소자의 박막트랜지스터 어레이기판 및 그 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20121228 Year of fee payment: 12 |
|
| FPAY | Annual fee payment |
Payment date: 20131227 Year of fee payment: 13 |
|
| FPAY | Annual fee payment |
Payment date: 20150127 Year of fee payment: 14 |
|
| FPAY | Annual fee payment |
Payment date: 20160128 Year of fee payment: 15 |
|
| FPAY | Annual fee payment |
Payment date: 20170116 Year of fee payment: 16 |
|
| LAPS | Lapse due to unpaid annual fee |