KR100317320B1 - device for handling wafer for CVD process in fabrication of semiconductor - Google Patents
device for handling wafer for CVD process in fabrication of semiconductor Download PDFInfo
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- KR100317320B1 KR100317320B1 KR1019990018709A KR19990018709A KR100317320B1 KR 100317320 B1 KR100317320 B1 KR 100317320B1 KR 1019990018709 A KR1019990018709 A KR 1019990018709A KR 19990018709 A KR19990018709 A KR 19990018709A KR 100317320 B1 KR100317320 B1 KR 100317320B1
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- wafer
- chemical vapor
- vapor deposition
- transfer arm
- deposition process
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 16
- 235000012431 wafers Nutrition 0.000 abstract description 38
- 238000005530 etching Methods 0.000 abstract description 4
- 241000555745 Sciuridae Species 0.000 description 7
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
본 발명은 트랜스퍼 아암의 구조를 개선하여 화학기상증착을 위한 종형로의 슬롯내에 뒷면이 서로 맞닿아 포개어진 상태로 웨이퍼가 로딩되도록 하므로써, 웨이퍼 뒷면에 대한 식각공정을 행하지 않아도 되도록 한 것이다.The present invention improves the structure of the transfer arm so that the wafers are loaded with the backsides in contact with each other in the slots of the vertical furnace for chemical vapor deposition so that the etching process for the backside of the wafers is not required.
이를 위해, 본 발명은 상부면에 진공홀(3a)이 형성된 상부튀저(1)와, 상기 상부튀저(1)의 하부면에 밀착되며 하부면에 진공홀(3b)이 형성된 하부튀저(2)와, 상기 상부튀저(1)와 하부튀저(2)의 후단부가 고정되는 고정블록(4)으로 구성되며, 상기 상부튀저(1)의 전단부 및 하부튀저(2)의 전단부는 끝단으로 갈수록 두께가 좁아지도록 경사진 테이퍼면(5)이 형성됨을 특징으로 하는 반도체소자 제조를 위한 화학기상증착 공정용 웨이퍼 핸들링장치가 제공된다.To this end, in the present invention, the upper surface of the lower surface of the lower surface of the lower surface of the lower surface of the lower surface of the upper surface (1), the lower surface of the lower surface of the lower surface of the upper surface of the lower surface of the lower surface of the lower surface of the lower surface of the lower surface of And a fixed block 4 fixed to the rear end of the upper and lower fuser parts 1 and 2, and the front and lower ends of the upper and second stoppers 2 are thickened toward the ends. Provided is a wafer handling apparatus for a chemical vapor deposition process for manufacturing a semiconductor device, characterized in that the tapered surface 5 is formed to be narrowed.
Description
본 발명은 반도체소자 제조를 위한 화학기상증착 공정용 웨이퍼 핸들링장치에 관한 것으로서, 더욱 상세하게는 저압 화학기상증착 공정에 사용되는 웨이퍼 핸들링용 트랜스퍼 아암의 구조 개선에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer handling apparatus for chemical vapor deposition processes for manufacturing semiconductor devices, and more particularly, to a structure improvement of a transfer arm for wafer handling used in low pressure chemical vapor deposition processes.
일반적으로, CVD(Chemical Vapour Deposition)란 특정의 반응기체들을 반응 용기속에 계속 투입하면서 적절한 조건을 유지시켜 주므로써 고체상의 물질을 웨이퍼(6) 표면에 증착시키는 것을 말한다.In general, CVD (Chemical Vapor Deposition) refers to the deposition of a solid material on the surface of the wafer 6 by maintaining specific conditions while continuing to introduce certain reactors into the reaction vessel.
도 1은 저압 화학기상증착 공정에 쓰이는 종형의 반응로로서, 아웃터튜브(8) 내부에 인너튜브(9)가 내장되고, 상기 인너튜브(9) 내부에는 석영보트(10)가 내장된다.1 is a vertical reactor used in a low pressure chemical vapor deposition process, the inner tube (9) is embedded in the outer tube (8), the inner quartz tube 10 is embedded in the inner tube (9).
이 때, 상기 석영보트(10)에는 피증착용 웨이퍼(6)가 수납되는 슬롯(7)이 구비된다.At this time, the quartz boat 10 is provided with a slot (7) for receiving the wafer 6 to be deposited.
한편, 종래에는 저압 화학기상증착 공정 진행시 각 슬롯(7)에 수납된 각 웨이퍼(6)의 뒷면(본딩패드가 형성되지 않은 면)에도 증착막이 형성되므로 인해, CCD 등의 반도체소자 제조시에는 웨이퍼(6) 뒷면을 식각해주게 된다.On the other hand, conventionally, since the deposition film is formed on the back surface (the surface where the bonding pad is not formed) of each wafer 6 accommodated in the slot 7 during the low pressure chemical vapor deposition process, a semiconductor device such as a CCD The back side of the wafer 6 is etched.
이와 같이, CCD등의 반도체소자에서 웨이퍼 뒷면을 식각하는 이유는, 뒷면에 증착막이 있을 경우에는 POCl3도핑시 게드링(gathering)이 효과적으로 수행되지 않기 때문이다.As described above, the back side of the wafer is etched in a semiconductor device such as a CCD because the backing of the wafer is not effectively performed when POCl 3 is doped when there is a deposition layer on the back side.
한편, 상기한 바와 같이 화학기상증착 공정후 웨이퍼의 뒷면 식각을 하지 않아도 되도록 하기 위해서는, 뒷면이 서로 맞닿도록 웨이퍼 2매를 겹친 상태에서 화학기상증착 공정을 진행하면 되나, 도 2에 도시한 바와 같은 구조로 된 기존의 트랜스퍼 아암(100a)으로서는 이러한 작용을 만족시킬 수 없었다.On the other hand, in order to avoid the etching of the back side of the wafer after the chemical vapor deposition process as described above, the chemical vapor deposition process may be carried out in the state that the two wafers overlapped so that the back side abuts each other, as shown in FIG. Such an operation could not be satisfied with the existing transfer arm 100a having the structure.
본 발명은 상기한 제반 문제점을 해결하기 위한 것으로서, 트랜스퍼 아암의 구조를 개선하여 화학기상증착을 위한 종형로의 슬롯내에 2매씩 짝을 이루어 웨이퍼 뒷면이 서로 맞닿아 포개어진 상태로 로딩되도록 하므로써, 웨이퍼 뒷면에 대한 식각공정을 행하지 않아도 되도록 한 반도체소자 제조를 위한 화학기상증착 공정용 웨이퍼 핸들링장치를 제공하는데 그 목적이 있다.The present invention is to solve the above-mentioned problems, by improving the structure of the transfer arm by making a pair of two in the slot of the vertical furnace for chemical vapor deposition by the wafer back to be stacked in contact with each other, so that the wafer An object of the present invention is to provide a wafer handling apparatus for a chemical vapor deposition process for manufacturing a semiconductor device so that the etching process for the back side is not required.
도 1은 일반적인 종형의 반응로를 나타낸 사시도1 is a perspective view showing a typical vertical reactor
도 2는 종래 트랜스퍼 아암을 나타낸 사시도2 is a perspective view showing a conventional transfer arm
도 3은 본 발명에 따른 트랜스퍼 아암을 나타낸 사시도3 is a perspective view of a transfer arm according to the present invention;
도 4는 도 3의 트랜스퍼 아암의 구조를 나타낸 종단면도4 is a longitudinal sectional view showing the structure of the transfer arm of FIG.
도 5a 내지 도 5c는 본 발명이 적용된 트랜스퍼 아암에 의한 로딩 과정을 설명한 것으로서,5A to 5C illustrate the loading process by the transfer arm to which the present invention is applied.
도 5a는 트랜스퍼 아암이 슬롯내로 진입한 상태를 나타낸 종단면도5A is a longitudinal sectional view showing a state in which a transfer arm has entered a slot;
도 5b는 트랜스퍼 아암이 상·하층 웨이퍼 사이를 빠져나오고 있는 도중의 상태를 나타낸 종단면도Fig. 5B is a longitudinal sectional view showing a state in which the transfer arm is exiting between the upper and lower wafers;
도 5c는 상·하층 웨이퍼 사이를 완전히 빠져나와 웨이퍼의 로딩이 완료된 상태를 나타낸 종단면도Figure 5c is a longitudinal cross-sectional view showing a state where the loading of the wafer is completed by completely exiting between the upper and lower wafers
* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
1:상부튀저 2:하부튀저1: upper temper 2: lower temper
3a, 3b:진공홀 4:고정블록3a, 3b: Vacuum hole 4: Fixed block
5:테이퍼면 6:웨이퍼5: Tapered side 6: Wafer
7:슬롯 8:아웃터튜브7: Slot 8: Outer tube
9:인너튜브 10:석영보트9: inner tube 10: quartz boat
100:트랜스퍼 아암100: transfer arm
상기한 목적을 달성하기 위해, 본 발명은 상부면에 진공홀이 형성된 상부튀저와, 상기 상부튀저의 하부면에 밀착되며 하부면에 진공홀이 형성된 하부튀저와, 상기 상부튀저와 하부튀저의 후단부가 고정되는 고정블록으로 구성되며, 상기 상부튀저의 전단부 및 하부튀저의 전단부는 끝단으로 갈수록 두께가 좁아지도록 경사진 테이퍼면이 형성됨을 특징으로 하는 반도체소자 제조를 위한 화학기상증착 공정용웨이퍼 핸들링장치가 제공된다.In order to achieve the above object, the present invention is the upper surface of the lower surface and the lower surface of the lower surface and the lower surface of the lower surface of the lower surface of the upper surface and the lower surface of the upper surface and the lower surface of the lower surface of the lower surface It is composed of a fixed block fixed to the upper, the front end of the upper portion and the front end of the lower portion of the lower surface of the chemical vapor deposition process for handling the chemical vapor deposition process for manufacturing a semiconductor device characterized in that the tapered surface is formed so that the thickness becomes narrower toward the end An apparatus is provided.
이하, 본 발명의 일실시예를 첨부도면 도 3 내지 도 5c를 참조하여 상세히 설명하면 다음과 같다.Hereinafter, an embodiment of the present invention will be described in detail with reference to FIGS. 3 to 5C.
도 3은 본 발명에 따른 트랜스퍼 아암을 나타낸 사시도이고, 도 4는 도 3의 구조를 나타낸 종단면도이며, 도 5a 내지 도 5c는 본 발명이 적용된 트랜스퍼 아암에 의한 로딩 과정을 설명한 종단면도이다.Figure 3 is a perspective view showing a transfer arm according to the present invention, Figure 4 is a longitudinal sectional view showing the structure of Figure 3, Figures 5a to 5c is a longitudinal sectional view illustrating a loading process by the transfer arm to which the present invention is applied.
본 발명은 상부면에 진공홀(3a)이 형성된 상부튀저(1)와, 상기 상부튀저(1)의 하부면에 밀착되며 하부면에 진공홀(3b)이 형성된 하부튀저(2)와, 상기 상부튀저(1)와 하부튀저(2)의 후단부가 고정되는 고정블록(4)으로 구성되며, 상기 상부튀저(1)의 전단부 및 하부튀저(2)의 전단부는 끝단으로 갈수록 두께가 좁아지도록 경사진 테이퍼면(5)이 형성된 것이다.According to the present invention, the upper surface of the upper surface of the lower surface of the lower surface of the lower surface of the upper surface of the lower surface of the lower surface of the upper surface of the lower surface of the lower surface of the lower surface of the lower surface of the upper surface of the lower surface of the lower surface of the upper surface of the lower surface of the upper surface of the lower surface of the upper surface of the upper surface of the surface of the upper surface of the surface of the upper surface It consists of a fixed block (4) is fixed to the rear end of the upper squirrel (1) and the lower squirrel (2), the front end of the upper squirrel (1) and the front end of the lower squirrel (2) to narrow the thickness toward the end An inclined tapered surface 5 is formed.
이 때, 상기 상부튀저(1) 및 하부튀저(2) 선단의 테이퍼면(5)은 평면상에서 볼 때 일정 곡률을 갖도록 형성됨이 바람직하다.At this time, it is preferable that the tapered surface 5 at the tip of the upper and lower tweezers 1 and 2 is formed to have a predetermined curvature in plan view.
즉, 반원형상 또는 반타원형상을 이룸이 바람직하다.That is, it is preferable to form a semi-circle shape or semi-ellipse shape.
이와 같이 구성된 본 고안의 작용은 다음과 같다.The operation of the present invention configured as described above is as follows.
먼저, 트랜스퍼 아암(100)의 상부튀저(1) 상면 및 하부튀저(2) 하면의 진공홀(3a)(3b)을 통해 진공압이 인가되어, 웨이퍼(6)가 상부튀저(1) 상면 및 하부튀저(2) 하면에 각각 흡착된 상태에서, 별도로 구비된 구동장치(도시는 생략함)가 작동함에 따라 트랜스퍼 아암(100)은 전진하여 석영보트(10)의 슬롯(7)내로 진입하게 된다.First, a vacuum pressure is applied through the vacuum holes 3a and 3b on the upper and lower surfaces of the upper squirrel 1 and the lower squirrel 2 of the transfer arm 100, so that the wafer 6 has an upper surface of the upper squirrel 1 and In a state in which each lower absorber 2 is adsorbed, the transfer arm 100 moves forward and enters the slot 7 of the quartz boat 10 as a separate driving device (not shown) is operated. .
이 때, 상부튀저(1)의 상면 및 하부튀저(2)의 하면에는 웨이퍼(6)의 뒷면이 각각 흡착되며, 이와 같이 웨이퍼의 뒷면을 흡착하는 이유는 본딩패드가 형성된 웨이퍼 상면을 흡착시의 충격 및 이물질등으로부터 보호하기 위함임은 물론이다.At this time, the back surface of the wafer 6 is adsorbed to the upper surface of the upper and lower lower flangers 2, respectively. The reason for adsorbing the rear surface of the wafer is that when the upper surface of the wafer on which the bonding pad is formed is adsorbed. Of course, to protect from impact and foreign matters.
한편, 상기와 같이 하여, 도 5a에 나타낸 바와 같이 슬롯(7)내로의 진입이 완료된 후에는 상부튀저(1) 및 하부튀저(2) 내부의 진공라인(도시는 생략함)을 통해 인가되고 있던 진공압이 차단된다.On the other hand, as described above, after the entry into the slot 7 is completed, as shown in Fig. 5A, the vacuum pumps (not shown) inside the upper and lower buzzers 2 have been applied. Vacuum pressure is cut off.
이어, 상기 트랜스퍼 아암(100)은 후퇴하게 되는데, 도 5b는 상부튀저(1) 및 하부튀저(2)가 후퇴하고 있는 도중의 상태를 나타낸 것이다.Subsequently, the transfer arm 100 is retracted, and FIG. 5B shows a state in which the upper and lower thrusters 1 and 2 are retreating.
그 후, 상기 트랜스퍼 아암(100)의 후퇴가 완료되어 상부튀저(1) 및 하부튀저(2)가 완전히 웨이퍼(6) 사이를 빠져나오면 상층에 위치하는 웨이퍼(6)와 하층에 위치하는 웨이퍼(6)는 도 5c에 나타낸 바와 같이 뒷면이 맞닿은 상태로 포개어지게 된다.After the retreat of the transfer arm 100 is completed and the upper and lower tweezers 2 completely pass between the wafers 6, the wafer 6 positioned in the upper layer and the wafer positioned in the lower layer ( 6) is superimposed on the back side in contact with, as shown in Figure 5c.
이와 같이 된 상태에서 증착이 진행되면, 웨이퍼(6)의 회로형성면에만 원하는 막이 형성되고 적층된 웨이퍼(6)의 뒷면은 서로 밀착되어 있으므로 인해 막의 형성이 일어나지 않게 된다.When the deposition proceeds in this state, the desired film is formed only on the circuit formation surface of the wafer 6 and the back surface of the stacked wafer 6 is in close contact with each other so that the film formation does not occur.
한편, 화학기상증착공정이 완료된 후, 언로딩시에는 전술한 바와는 반대로 동작하여 언로딩이 진행된다.On the other hand, after the chemical vapor deposition process is completed, the unloading proceeds in reverse operation as described above during unloading.
즉, 트랜스퍼 아암의 전진에 의해 상층 및 하층 웨이퍼(6) 사이로 테이퍼면(5)이 형성된 상·하부튀저(1)(2)가 진입한 후, 진공압이 인가되면 상층 웨이퍼 및 하층 웨이퍼는 각각 상부튀저의 상면 및 하부튀저의 하면에 흡착되며,이어 트랜스퍼 아암이 후퇴하면 웨이퍼(6)는 석영보트(10)의 슬롯(7)을 빠져나오게 된다.That is, after the upper and lower plungers 1 and 2 having the tapered surface 5 formed between the upper and lower wafers 6 enter the transfer arm, and then a vacuum pressure is applied, the upper and lower wafers are respectively It is adsorbed on the upper surface of the upper and lower lower projections, and when the transfer arm retracts, the wafer 6 exits the slot 7 of the quartz boat 10.
따라서, 본 고안은 석영보트(10)의 슬롯(7)내에 뒷면이 맞닿아 포개어진 상태로 웨이퍼가 로딩되므로, 저압 화학기상증착 공정 진행후에 행해지던 웨이퍼(6) 뒷면에 대한 식각을 행하지 않아도 되며, 이에 따라 화학기상증착 공정의 생산성을 향상시킬 수 있게 된다.Therefore, the present invention is because the wafer is loaded in a state in which the rear surface is in contact with the inside of the slot 7 of the quartz boat 10 is superimposed, there is no need to etch the back surface of the wafer 6 that was performed after the low pressure chemical vapor deposition process. Therefore, the productivity of the chemical vapor deposition process can be improved.
이상에서와 같이, 본 발명은 트랜스퍼 아암의 구조를 개선하여 화학기상증착을 위한 종형로의 슬롯내에 2매의 웨이퍼 뒷면이 서로 맞닿아 포개어진 상태로 로딩되도록 한 것이다.As described above, the present invention is to improve the structure of the transfer arm so that the back of the two wafers are stacked in contact with each other in the slot of the vertical furnace for chemical vapor deposition.
이에 따라, 본 발명은 웨이퍼 뒷면에 대한 식각공정을 행하지 않아도 됨과 더불어, 보트의 슬롯 내로 웨이퍼를 로딩시 한 번에 2매씩 로딩이 가능하므로 인해, 증착 공정의 생산성을 높일 수 있게 된다.Accordingly, the present invention does not need to perform an etching process on the back side of the wafer, and because the wafer can be loaded two at a time when loading the wafer into the slot of the boat, it is possible to increase the productivity of the deposition process.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990018709A KR100317320B1 (en) | 1999-05-24 | 1999-05-24 | device for handling wafer for CVD process in fabrication of semiconductor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990018709A KR100317320B1 (en) | 1999-05-24 | 1999-05-24 | device for handling wafer for CVD process in fabrication of semiconductor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5856440U (en) * | 1981-10-13 | 1983-04-16 | 日本テキサス・インスツルメンツ株式会社 | vacuum tweezers |
| JPH0363937U (en) * | 1989-10-23 | 1991-06-21 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5856440U (en) * | 1981-10-13 | 1983-04-16 | 日本テキサス・インスツルメンツ株式会社 | vacuum tweezers |
| JPH0363937U (en) * | 1989-10-23 | 1991-06-21 |
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