KR100307042B1 - Amorphous Diamond Membrane Flat Field Emission Cathode - Google Patents

Abstract

The field emission cathode includes an amorphous diamond film layer 12 which functions as a low efficiency work function with the conductive material layer 14 and is deposited on the conductive material layer to form an emission position. Each emission position includes at least two subregions with different electron affinity.

Description

[Name of invention]

Flat Field Radiating Cathode

[Related Fields]

The present invention is a CIP application of Application No. 07 / 851.701 (March 16, 1992) entitled "Flat Panel Display Based on Diamond Thin Films" referred to herein.

Technical Field of the Invention

BACKGROUND OF THE INVENTION Field of the Invention The present invention generally relates to flat field emission cathodes and to cathodes employing amorphous diamond films having a plurality of radiation positions located on a flat radiation surface.

[Background of invention]

Field radiation is a phenomenon that occurs when an electric field near the surface of the emissive material narrows the width of the potential barrier present on the surface of the emissive material. This causes the quantum tunnel effect to occur, causing electrons to radiate from the material through the potential barrier. Since this is the opposite of heat radiation, the thermal energy in the radiating material is sufficient to radiate electrons from the material. Thermal ion radiation is a typical phenomenon, whereas field emission is a quantum mechanical phenomenon.

The field strength needed to initiate electron field emission from the surface of a particular material depends on the effective "work function" of the material. Many materials have a positive work function, requiring a relatively strong electric field to cause field radiation. In fact, some materials have a low work function or negative electron affinity, so there is no need for a strong electric field to be emitted. This material is deposited in a thin film on the conductor, so that a relatively low threshold voltage produces the cathode needed to produce electron emission.

In conventional devices, it has been desirable to provide a cathode form that causes field radiation to be collected at a sharp point at the tip of a single, relatively conical cathode (micro-tip cathode) to enhance electron field radiation. Micro-tip cathodes have been used for years in field emission displays with respect to the extraction grid adjacent to the cathode.

For example, US Pat. Nos. 4, 857, 799, issued August 15, 1989 to Spindt et al., Relate to matrix-addressed flat panel displays using field emission cathodes. The cathode is coupled to the display support structure and conducts current to the corresponding cathodic region on the face plate. The face plate is 40 microns away from the cathode arrangement in a preferred embodiment, and a vacuum is provided in the space between the plate and the cathode. Leg-shaped spacers interspersed between the pixels maintain this spacing, and the base electrical junction of the cathode is the portion that is diffused through the support structure. Spind et al. Utilize a plurality of micro-tip field emission cathodes in a matrix arrangement, the tip of which is aligned with the opening of the extraction grid above the cathode. The display described in the Spind et al. Patent is a triode (three terminal) display with an anode added over the extraction grid.

Since the micro-tips have a fine structure, they are difficult to fabricate. If the micro-tip does not have a uniform shape throughout the display, the radiation from tip to tip changes, resulting in non-uniform illumination of the display. Moreover, because the manufacturing error is relatively severe, the manufacturing of this micro-tip display is expensive.

Over the years, substantial efforts have been made to solve the problem of making cathodes that can be mass manufactured to within tolerance to precise operation. Another object of the prior art is to minimize the extraction field strength by using a spinning material having a relatively low efficiency work function.

This effort is disclosed in US Pat. No. 3, 947, 716, issued March 30, 1976 to Fraser, Jr. et al., Relating to field emission tips on which metal adsorbents are selectively deposited. . In vacuum, the purified field emission tip receives a heating pulse in the presence of an electrostatic system to form a thermal field made from the selected plane. The radiation pattern from this selected plane is observed and the process of heating the tip in the electrostatic field is repeated until radiation is observed in the desired plane. Thereafter, the adsorbent evaporates on the tip. The tip constructed by this process is selectively engraved with the radiation plane with reduced work function and the non-radiation plane with increased work function. The metal adsorbent deposited on the tip thus prepared results in a field emitter tip having substantially improved spinning characteristics. As already mentioned, these micro-tip cathodes are expensive to produce due to their fine form. In addition, since the radiation occurs at a relatively sharp tip, the radiation from one cathode to the other becomes slightly inconsistent. This problem is not acceptable when many cathodes are used in large numbers, such as in flat panel displays for computers.

As is evident in the cathode structure described above, a major attribute in good cathode design is to minimize the work function of the material constituting the cathode. In fact, in the form of diamond crystals, several materials, such as alkyl metals and elemental carbons, exhibit low efficiency work functions. Many inventions focus on finding suitable forms for cathodes that utilize negative electron affinity properties, such as cathode coatings.

For example, U. S. Patent No. 3, 970, 887, issued July 20, 1976 to Smith et al., Discloses that a single crystal semiconductor substrate is processed by known integrated microelectronic circuit technology, An ultra-fine field emission electron source that generates an integrated crystalline semiconductor projecting field emitter tip at a desired field emission cathode location on a surface of a substrate in such a manner that the field emitter tip is integrated into a single crystal semiconductor substrate, and a method of manufacturing the same. An insulating layer and a conductive layer semiconductor substrate overlying are formed in turn and openings are provided in the field emission position to form the micro-anode at the field emission tip. By initially doping the semiconductor substrate appropriately to provide opposite conductive regions at each field emission location and forming a suitable conductive layer, electrical isolation between several field emission locations can be achieved. Smith and the like refer to sharply tipped cathodes. Thus, the cathode disclosed in the smid and the like has the same disadvantage as the Fraser junior and the like.

US Patent Nos. 4, 307, and 507, issued December 29, 1981 to Gray et al., Describe an electric field emitter that allows a single crystal material substrate to be selectively masked to form islands on the underlying substrate. A method of fabricating an array cathode structure. The single crystal material below the unmasked area is oriented-dependently etched to form an array of openings whose sides intersect at the sharp points of the crystals.

U. S. Patent No. 4, 685, 996, issued August 11, 1987 to Busta et al., Also relates to a method of making an field emitter, wherein at least one funnel-shaped protrusion on a substrate is formed. And a single crystal silicon substrate anisotropically etched to form. The manufacturing method disclosed in Busta et al. Provides a sharp tip cathode.

Sharp tip cathodes are disclosed in US Pat. Nos. 4, 885, 636, issued August 8, 1989 to Busta et al.

Another keen tip is disclosed in US Pat. No. 4, 964, 946, issued October 23, 1990 to Gray et al. Gray et al. Disclose a process of fabricating soft aligned field emitters using soft leveling planarization techniques, such as spin-on processes.

Although they have the advantage of using a low efficiency work function, the sharp tip cathodes have a fundamental problem, as briefly mentioned above, when employed in flat panel graphic displays. First, manufacturing is relatively expensive. Second, it is difficult to produce consistently. That is, electrospinning from the cathode of the sharp tip occurs at the tip. Thus, the tips must be made with maximum precision so that some cathodes in the matrix of adjacent cathodes do not emit electrons more effectively than other cathodes, thereby forming a non-uniform visual display. In other words, the fabrication of the cathode should be done more reliably to minimize the problem of brightness mismatch of the display along its surface.

In Application No. 07 / 851,701, entitled March 16, 1992, “Flat Panel Display Based on Diamond Thin Films”, an alternative cathode structure is disclosed first. This application discloses a cathode having a relatively flat radial surface as opposed to the micro-tip configuration described above. In a preferred embodiment the cathode uses a field emission material having a relatively low efficiency work function. This material is deposited on the conductive layer to form a plurality of radiation positions, each of which is capable of field emission of electrons under a relatively low intensity electric field.

Planar cathodes are less expensive and less difficult to produce quantitatively, as the fine micro-tip form is removed. The advantages of the planar cathode structure are described in detail here. Application numbers 07 / 851,701 are described herein by reference.

A relatively recent development in the field of materials science has found amorphous diamond. The structure and properties of amorphous diamond are It is described in detail in “Thin Diamond”, published by C. Collins et al. Collins et al describe a method of producing an amorphous diamond film by laser deposition techniques. As described herein, the amorphous diamond contains a plurality of microcrystals, each of which has a specific structure depending on the processing method of the film. How these microcrystals are formed and their properties are not fully understood.

Diamonds have a negative electron affinity. That is, only a relatively low electric field is needed to distort the transition barrier present on the diamond's surface. Thus, diamond is a very preferred material used in conjunction with field emission cathodes. In fact, the prior art has used a crystalline diamond film as the radiation surface on a micro-tip cathode.

British Columbia, B4, 7ET, Aston Triangle, Aston University, Department of Applied Physics, Electronic Engineering, filed May 29, 1987. Basic and Al. V. Issued by the Latham-in "PVC improved by using the carbon-coated cold-cathode emission", about ^-1 1.5MVm switch from a low electric field so - and so on, usually usually applied electric field of <or = 8MVm ^-1 A new type of synthetic resin-carbon field emission cathode has been described, which has a reversible IV characteristic with a stable radiated current of> or = 1 mA. Electrospinning imaging techniques have shown that the entire external storage current originates from high intensity individual radiation locations that are randomly distributed on the cathode surface. The observed properties have been qualitatively explained by new high temperature electrospinning techniques involving a two-stage switch-on process involving metal-insulator-metal-insulator-vacuum (MIMIV) radiating tissue. However, the graphite powder is mixed with the resin compound to produce larger particles, which results in fewer spinning positions since the number of particles per unit area is smaller. It is desirable that a large amount of position be generated to make more uniform brightness from a lower voltage source.

June 10, 1991 Mr. from the Department of Physical and Astro and Condensed Particles and Surface Science Programs at the University of Ohio, Ohten, Ohio. King, Agracia, D. Seed. Ingram, 옘. Rake and iii. this. In “Cold Field Emission from CVD Diamond Films Observed in Radiated Electron Microscopy,” published by Kodeshi, observed to emit electrons of sufficient intensity to form an image in the accelerating field of a radiating microscope without external excitation. A thick chemical vapor deposition "CVD" polycrystalline diamond film is disclosed. Each crystal is about 1-10 microns. The CVD process requires 800 ° C. for the deposition of the diamond film. This temperature can melt the glass substrate.

The prior art includes: (1) the use of the inherent properties of amorphous diamond; (2) providing an field emission cathode having a more dispersed area in which field radiation may occur; And (3) providing a sufficiently high concentration of radiation (i.e., smaller particles or crystals) to produce more uniform electron radiation from each cathode position, using a low voltage source to produce an electric field for electron radiation, and the like. There was a problem.

Summary of the Invention

The prior art has not recognized that amorphous diamond, which has physical properties that are essentially different from other forms of diamond, makes particularly good spinning materials. Application No. 07/851, 701 discloses for the first time the use of amorphous diamond as a spinning material. Indeed, in the preferred embodiment described herein, amorphous diamond is used in connection with planar cathode structures resulting in radically different field emission cathode designs.

The present invention represented by the crystal and other percentages of the structure of SP ³ represented by a plurality of diamond micro-crystal region structure of SP ² of a certain percentage for each region (pixel) to the deposition of the amorphous diamond in a manner to cause deposition on the cathode surface Amorphous diamond is used to make crystals exist. While SP ² and SP ³ crystals have different electron affinity, many SP ² and SP ³ structures have discontinuities or interfaces between them in each region.

In view of the foregoing, it is therefore an object of the present invention to provide an independent addressable cathode comprising a layer of amorphous diamond film which functions as a conductive material layer and a low efficiency work function material and is deposited on the conductive material. Here, the amorphous diamond film is composed of a plurality of locally dispersed electron emission positions, and each sub position has a plurality of sub regions having different electron affinity between the sub regions.

In a preferred embodiment of the present invention, an amorphous diamond film is deposited with a relatively flat radiating surface. Therefore, flat cathodes are easier to manufacture, less expensive to manufacture, and easier to control radiation from the flat cathodes during operation of the display.

The technical advantage of the present invention is that it provides a cathode having an electrical property including a discontinuous boundary in which the radiation position has a different electron affinity.

Another technical advantage of the present invention is to provide a cathode whose radial position comprises a dopant element.

Another technical advantage of the present invention is to provide a cathode wherein the dopant element is carbon.

Another technical advantage of the present invention is to provide a cathode in which the radial position each has a plurality of coupling structures.

Another technical advantage of the present invention is to provide a cathode in which one bonding structure is SP ³ in the radial position.

Another technical advantage of the present invention is to provide a cathode in which each radial position is a plurality of coupling orders, one of which is SP ³ .

Another technical advantage of the present invention is to provide a cathode whose radiation position comprises a dopant of a low efficiency work function material and another element. In the case of using amorphous diamond as the low efficiency work function material, the dopant element is not carbon.

Another technical advantage of the present invention is to provide a cathode whose radial position includes the discontinuity of the crystal structure. This discontinuity is point defects, line defects, or dislocations.

The present invention includes a novel method of operation for flat panel displays and a method of using amorphous diamond as a coating on a radiating wire screen and as an element in a cold cathode fluorescent lamp.

In order to achieve the above-described characteristics and advantages, a preferred embodiment of the present invention is an amorphous diamond film cold cathode comprising a substrate, a conductive material layer, an electron resistant pillar deposited on the substrate, and an amorphous diamond film layer deposited on the conductive material. As an example, the amorphous diamond film has a relatively flat radiation surface that includes a plurality of dispersed microcrystalline electron emission positions that vary electron affinity.

What has been described above is a broad description of the characteristics and technical advantages of the present invention in order that the detailed description thereof may be better understood. Additional features and advantages of the present invention which form the claims of the present invention are described below. It will be appreciated by those skilled in the art that the concepts and specific embodiments described may be used as a basis for modifying and designing other configurations that perform the same purposes as the present invention. It will be understood by those skilled in the art that equivalent configurations may be made without departing from the scope and spirit of the invention as set forth in the claims.

[Brief Description of Drawings]

Next, the present invention will be described in detail with reference to the accompanying drawings in order to aid in a full understanding of the present invention and its advantages.

1 is a cross-sectional view of a cathode and a substrate of the present invention.

2 is a plan view of the cathode of the present invention including the radial position.

3 is a detail of the radiation position of FIG.

4 is a cross-sectional view of a flat panel display using the cathode of the present invention.

5 shows a coated wire matrix emitter.

6 is a cross-sectional view of the coated wire.

7 is a side view of a fluorescent tube using the coated wire of FIG.

8 is a partial cross-sectional view of the fluorescent tube of FIG.

9 is a computer with a flat panel display embodying the present invention.

Detailed description of the invention

A cross-sectional view showing the cathode and substrate of the present invention is shown in FIG. The cathode, generally designated 10, comprises a resistive layer 11, a low efficiency work function emitter layer 12, and an intermediate metal layer 13. The cathode 10 is placed on the cathode conductive layer 14 placed on the substrate 15. The structure and function of the layers 11, 12, 13 of the cathode 10 and the relationship of the cathode 10 to the conductive layer 14 and the substrate 15 are described in US Patent Nos. 07/851 and 701. This is described in detail.

2 shows a plan view of the cathode 10 of FIG. 1. In a preferred embodiment of the present invention, the radiator layer 12 is an amorphous diamond film containing a plurality of diamond microcrystals of the entire amorphous structure. The amorphous diamond material may be laser plasma deposition, chemical vapor deposition, ion beam deposition, sputtering, low temperature deposition (less than 500 degrees Celsius), evaporation, cathodic arc evaporation, magnetic separation cathodic arc evaporation, laser sonic deposition, or similar techniques or such Microcrystals are generated when deposited on the metal layer 13 by a combination of these, whereby the amorphous diamond film is deposited as a plurality of microcrystals. One such process is the "Laser Plasma Source of Amorphous Diamond" published by the American Physics Society. ratio. Collins et al., January 1989.

Microcrystals are formed into specific atomic structures that depend on the ambient conditions and coincidence upon deposition. At a given ambient pressure and temperature, a certain percentage of the crystal will appear in the SP ² (two-dimensional bond of carbon atoms) structure. However, a somewhat smaller percentage will appear in the SP ³ (three-dimensional bond) structure. The electron affinity for diamond microcrystals of the SP ³ structure is less than the electron affinity for carbon or graphite (graphite) microcrystals of the SP ² structure. Thus, the microcrystals of the SP ³ structure have low electron affinity and form "radiative positions". These spinning positions (or microcrystals having an SP ³ structure) are represented by a plurality of dark spots on the radiator layer 12 in FIG.

The flat surface is essentially a micro flat surface. However, no special type of surface shape is required. However, a common feature of certain polycrystalline thin films is that they can improve their radiation characteristics due to the increase in expansion elements. Any micro-tip placement results in a larger expansion element, and in fact the present invention can be used for micro-tip or "pointed" constructions.

3 shows the microcrystals of FIG. 2 in more detail. A plurality of microcrystals 31, 32, 33, 34 are shown for example. The microcrystals 31, 32, 33 are shown to have an SP ² structure. Microcrystals 34 are shown to have an SP ³ structure. As shown in FIG. 3, microcrystals 34 are surrounded by microcrystals having an SP ² structure.

A very large number of randomly distributed local radial positions are provided per unit area of the surface. This radiation position has different electronic properties than the rest of the membrane. This is due to a combination of one or more of the following conditions:

1) the presence of doping atoms (such as carbon) in the amorphous diamond lattice; 2) binding structure change from SP ² to SP ³ in the same microcrystal; 3) change in the order of the bonding structure of the same microcrystals; 4) impurities of the membrane material and other elements (usually dopant elements); 5) the interface between the various microcrystals; 6) impurity or bond structure difference occurring in the boundary of microcrystalline; 7) Other defects such as point or line defects or misalignment.

Methods of generating each of the conditions described above in the production of the membrane are well represented in the art.

One of the conditions described above that causes a difference in the microcrystals is doping. Doping of the amorphous diamond thin film can be achieved by inserting carbon elements as if they were deposited into diamond. Some microcrystals will be n-type. Optionally, non-carbon dopant elements may be used based on the desired percentage and properties of the spinning position. Fortunately, in a flat panel display environment, a cathode with as few radiation positions as one can function sufficiently. However, for optimal function, 1 to 10 n-type microcrystals per square micron are preferred. And, in fact, the invention produces microcrystals of less than 1 micron, usually 0.1 micron in diameter.

Radiation from the cathode 10 of FIG. 1 occurs when a potential difference is applied between the cathode 10 and the anode (not shown in FIG. 1) separated by some distance from the cathode 10. FIG. . At the same time this potential is applied, the electrons move to the emitting layer 12 of the cathode 10.

In the following examples, the condition assumed to exist to generate different work functions of microcrystals is the transformation of the bond structure from SP ² to SP ³ of the same microcrystals (condition 3 above). With respect to the radiation positions shown in FIGS. 2 and 3, the microcrystals having the SP ³ structure have a lower work function and electron affinity than the microcrystals having the SP ² structure. Thus, as the voltage increases between the cathode 10 and the anode (not shown), the voltage will reach the point where the SP ³ microcrystals begin to emit electrons. If the percentage of the SP ³ microcrystals on the cathode 10 surface is high enough, the radiation from the SP ³ microcrystals will be sufficient to excite the anode (not shown) and will be large enough to generate radiation from the SP ² microcrystals. No need to raise the voltage level. Thus, by controlling the pressure, temperature and deposition method of the amorphous diamond film in a manner well known in the art, the SP ³ microcrystals can make the total susceptibility percentage of the microcrystals large enough to produce sufficient electron emission.

4 is a cross-sectional view of a flat panel display using the cathode of the present invention. The cathode 10, still disposed on the cathode conductive layer 14 and the substrate 15, as shown in FIG. 1, is bonded to an anode, which is generally indicated at 41 and in a preferred embodiment comprises a substrate 42 formed of glass. . The substrate 42 has an anode conductive layer 43 which is an indium tin oxide layer in a preferred embodiment. Finally, the fluorescent layer 44 is deposited on the anode conductive layer to provide a visual indication of the electron flow from the cathode 10. That is, when a potential difference is applied between the anodes 41 and the cathodes 10, electrons flowing from the cathodes 10 flow toward the anode conductive layer 43, but the fluorescent layer 44 collides, so that the fluorescent layer is glass. Light is emitted through the substrate 42 to provide a preferred type of visual display for use with a computer or other video device. The anode 41 is separated by insulated separators 45 and 46 which provide the necessary separation between the cathode 10 and the anode 41. This is all in accordance with the apparatus described in US Pat. No. 07/851/701.

Also shown in FIG. 4 is a voltage source 47 comprising an anode 48 and a cathode 49. The anode is coupled from the voltage source 47 to the anode conductive layer 43, while the cathode 49 is coupled from the voltage source 47 to the cathode conductive layer 14. The voltage source 47 applies a potential difference between the cathode 10 and the anode 41 to generate an electron flow between the cathode 10 and the anode 41 when the voltage applied by the voltage source 47 is sufficiently high.

9 shows a computer 90 having a keyboard 93, a disk drive 94, hardware 92, and a display 91. The present invention can be used in the display 91 as a means for providing an image and text. All visible of the present invention is the anode 41.

In FIG. 5, the wire matrix spinner is coated in the form of a wire network, generally designated 51. The wire net 51 includes rows and columns of a plurality of wires that are electrically coupled at intersections. The wire network 51 is coated with a material having a low efficiency work function and electron affinity such as amorphous diamond, using an uncoated wire or plate cathode and applying a high current and potential difference to produce an electron flow from the incandescent and wire networks to the anode Produces wire cathodes for use in By virtue of the amorphous diamond coating and its associated low work function, incandescence is no longer needed. Thus, the wire 51 cathode can be used to emit electrons at room temperature.

6 shows a cross-sectional view of a wire coated with a material having a low work function and electron affinity. The wire designated 61 has a coating 62 deposited by laser plasma deposition, or one of the remaining known techniques described above, such that the coating 62 is formed with the cathodes described in FIGS. In the same way it serves as a cold cathode.

In FIG. 7, one application of the wire 61 is possible, wherein the coated wire 61 is capable of conductive filaments, and is surrounded by a glass tube 72 having an electrical contact 73 serving as an anode and providing a fluorescent tube. An example is shown. The tube is similar to the example of the flat panel display described in connection with FIGS. 1-5, i.e., the potential difference is applied between the wire 61 (negative) and the tube 72 k so that the cathode wire 61 and It functions to sufficiently overcome the space charge between the tube anodes 72. Once the space charge is overcome, electrons flow from the radial position SP ³ of the coating 62.

8, a partial cross-sectional view of the fluorescent tube 71 of FIG. Again shown is the wire 61 and coating 62 of FIG. 6 which together form a low efficiency work function cathode in the fluorescent tube 71. The glass tube 72 of FIG. 7 includes a glass wall 81 coated on the anode conductive layer 82. The anode conductive layer 82 is electrically coupled to the electrical contact 73 of FIG. Finally, the fluorescent layer 83 is deposited on the anode conductive layer 82. When a potential difference is applied between the cathode wire 61 and the anode conductive layer 82, electrons flow between the emitter coating 82 and the anode conductive layer 82. However, as in FIG. 4, electrons first collide with the mold layer 83, causing the fluorescent layer 83 to emit photons through the glass wall 81 to the outside of the fluorescent tube 71. Provide light in a manner similar to conventional fluorescent tubes. However, since the fluorescent tubes of FIGS. 7 and 8 use a cathode having a low efficiency work function emitter such as an amorphous diamond film, the fluorescent tube does not get warm in operation. This saves the energy wasted in the form of heat, usually in conventional fluorescent tubes. And since heat does not generate | occur | produce, it is not necessary to remove heat later by air regulation.

Although the invention and its advantages have been described in detail, it is evident that various modifications, substitutions and alterations are possible without departing from the spirit and scope of the invention according to the appended claims.

Claims (27)

Conductive material layer: and an amorphous diamond layer deposited over the conductive material, the amorphous diamond layer comprising a bonded structure of diamond crystals and graphite crystals, the planar radiation surface comprising a plurality of locally dispersed electron emission positions. Flat field emission cathode characterized in that it has. 2. The flat field emission cathode of claim 1, wherein said radiation locations have discrete electrical characteristics from one another. The flat field emission cathode of claim 1, wherein said location has at least two different electron affinities. 2. The flat field emission cathode of claim 1, wherein each location is less than 1 micron in diameter. 2. The flat field emission cathode of claim 1, wherein said radiation locations each comprise a dopant element. 6. The flat field emission cathode of claim 5, wherein said dopant element is carbon. 2. The flat field emission cathode of claim 1, wherein said radiation location has a plurality of different coupling structures. 8. The flat field emission cathode of claim 7, wherein one of said coupling structures is SP ³ . 2. The flat field emission cathode of claim 1, wherein said radiation locations each comprise a discontinuity of crystal structure. 10. The flat field emission cathode of claim 9, wherein the discontinuity is point discontinuity. 10. The flat field emission cathode of claim 9, wherein said discontinuity is a line discontinuity. 10. The cathode of claim 9, wherein the discontinuity is misalignment. Board; Conductive material layer; And an amorphous diamond film layer deposited on the conductive material layer, wherein the amorphous diamond film includes a bonding structure of diamond crystals and graphite crystals, and has a flat radiation surface including a plurality of microcrystalline radiation positions. Just cold cathode. 14. The diamond film cold cathode of claim 13, wherein at least the adjacent radiation positions of said radiation positions have discontinuous electrical characteristics. 14. The diamond film cold cathode of claim 13, wherein each location is less than 1 micron in diameter. The diamond film cold cathode according to claim 13, wherein the spinning position comprises a dopant element. 17. The diamond film cold cathode of claim 16, wherein the dopant element is carbon. 14. The diamond film cold cathode of claim 13, wherein each of the spinning positions has at least two different bonding structures. 19. The diamond film cold cathode of claim 18, wherein one of the bonding structures is SP ³ . 14. A diamond film cold cathode according to claim 13, wherein each said spinning position has at least two different coupling orders. 14. The diamond film cold cathode of claim 13, wherein the spinning position comprises a dopant other than carbon. 14. The diamond film cold cathode of claim 13, wherein said radiation location includes defects in crystal structure. 23. The diamond film cold cathode of claim 22, wherein said defect is a point defect. 23. The diamond film cold cathode according to claim 22, wherein said defect is a line defect. 23. The diamond film cold cathode according to claim 22, wherein the defect is misalignment. Flowing current through the conductive material layer; And directing the current through an amorphous diamond film layer deposited on the conductive material layer, wherein the amorphous diamond film includes a coupling structure of diamond crystals and graphite crystals, and has a plurality of discontinuous electrical characteristics. A cathode operating method, characterized in that it has a flat radiation surface including the radiation position of the. An amorphous diamond film layer disposed on the conductive filament and including a plurality of sub-positions of electron emission positions, including a bonding structure of diamond crystals and graphite crystals; And an anode surrounding the filament and the amorphous diamond film and emitting light in response to reception of electrons emitted by the electron emission position.