JP2923980B2 - Method of manufacturing field emission cold cathode - Google Patents

Method of manufacturing field emission cold cathode

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Publication number
JP2923980B2
JP2923980B2 JP18114089A JP18114089A JP2923980B2 JP 2923980 B2 JP2923980 B2 JP 2923980B2 JP 18114089 A JP18114089 A JP 18114089A JP 18114089 A JP18114089 A JP 18114089A JP 2923980 B2 JP2923980 B2 JP 2923980B2
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Japan
Prior art keywords
cold cathode
film
field emission
method
surface
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Expired - Fee Related
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JP18114089A
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Japanese (ja)
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JPH0346729A (en
Inventor
博行 加道
信幸 吉池
正則 渡辺
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松下電器産業株式会社
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Description

Description: TECHNICAL FIELD The present invention relates to a method for manufacturing a field emission cold cathode using a planar cold cathode.

2. Description of the Related Art Conventionally, many field emission cold cathodes using thin films have been reported. Among them, a planar-type cold cathode as shown in FIG. 4 (see FIG. 5 of JP-A-63-274047) is
It is known that electron emission occurs at a low voltage of about 100V. The cold cathode 2 and the gate electrode 3 are configured to face each other on the surface of the insulating substrate 1. A large number of convex portions 4 are provided on the end surface of the cold cathode 2 facing the gate electrode 3. For the cold cathode 2, carbide such as WC, SiC, ZrC, etc. is generally used in addition to the high melting point metal W, Mo, Ta, Zr, Si and alloys thereof. Approximately between cold cathode 2 and gate electrode 3
When a voltage of 100 V is applied, about 10 7 V / c is applied to the tip of the cold cathode.
When a high electric field of m is applied, electron emission occurs.

Problems to be Solved by the Invention The field emission type cold cathode of this configuration has been receiving particular attention recently since it operates at a relatively low voltage. However, this type of field emission cold cathode using a metal or carbide as a cathode material has a fluctuation in emission current generally called speckle noise, and is regarded as an unstable electron source, and has not been put to practical use. The main cause is that electron emission is 0.
Originating from extremely small electrode surfaces of 1 μm 2 or less,
It is considered that this is because the shape of the electrode surface changes during use, the work function of the surface changes, and the electron emission portion changes from one to another.

It is an object of the present invention to provide a method for inexpensively manufacturing a field emission type cold cathode in which the fluctuation of the emission current is extremely small.

Means for Solving the Problems The present invention provides a method of laminating a low-resistance film and a carbon film on the surface of an insulating substrate, removing predetermined regions of the laminated low-resistance film and the carbon film by photolithography, and forming a cold cathode and a gate electrode. Are simultaneously formed.

Action 0.01 to 0.2 μm thick, specific resistance 1 to 10 7 Ω on cold cathode surface
When a carbon film of cm is laminated, if electron emission tends to concentrate on a small part of the surface of the cold cathode, the internal resistance of the carbon film lowers the surface potential and a so-called negative feedback effect acts. The electron emission occurs from a wide area. Therefore, a change in shape of a specific portion of the cold cathode surface hardly occurs, and stable electron emission can be obtained.

In addition, even if the carbon film chemically reacts with the residual gas in the vacuum vessel mainly composed of O 2 and H 2 O, it is dispersed as a gas such as CO, CO 2 , hydrocarbon, etc. The carbon surface is maintained, and the work function of the cold cathode surface hardly changes. Therefore, there is a feature that stable electron emission can be obtained even at a vacuum degree of 10 -5 to 10 -6 Torr.

Such a cold cathode can be formed by laminating a low resistance conductive film and a carbon film. The carbon film formed on the electrode surface is CVD
A method of applying an amorphous carbon film, graphite film, diamond film, or organic polymer film to a predetermined thickness by the method and baking it in a non-oxidizing atmosphere to form a carbon film, forming a cold cathode by photolithography technology However, it can be formed by a method of baking in a non-oxidizing atmosphere while leaving the photoresist to leave a carbon film only on the electrode surface (hereinafter, these carbon films are referred to as graphite-like films).

Embodiments Hereinafter, embodiments of the present invention will be described with reference to the drawings.

Embodiment 1 FIG. 1 is a sectional view showing a main part of an electrode configuration according to Embodiment 1 of the present invention. The cold cathode 6 and the gate electrode 7 are configured to face the surface of the insulating substrate 5. The cold cathode 6 is composed of a metal electrode 8 and a carbon film 9 coated on its surface. Cold cathode 6
A concave portion 10 is formed in a portion of the substrate surface opposite to the gate electrode 7.

Incidentally, as shown in FIG. 2, the metal film under the cold cathode tip portion may be etched to form the carbon film eaves 11.

Next, a method for manufacturing the field emission cold cathode shown in FIG. 1 will be described with reference to FIG.

A tungsten film 8 having a thickness of 0.2 μm is formed on the surface of an insulating substrate, for example, a glass substrate 5 by a sputtering method or the like, and a film of polyacrylonitrile (hereinafter referred to as PAN) is applied on the surface with a thickness of 0.3 μm (see FIG. 3 (a), the cold cathode 6 and the gate electrode 7 are simultaneously formed by the photolithography technique (FIG. 3 (b)).

Next, the electrode substrate is heated to 600 ° C. in a nitrogen gas atmosphere to form a carbon film 12 ′ having a specific resistance of about 10 3 Ω-cm (FIG. 3C). Further, the glass substrate surface is etched by immersion in a buffer etch solution to form the eaves portion 14 (FIG. 3D).

To form a thin film of PAN, use dimethylformamide (DM
It was formed by dissolving in the solution of F) and applying to the surface of the metal layer 8. PAN can greatly change the resistance value of the film depending on the firing temperature. For example, when fired at 400 ° C, the specific resistance is about 10 6
A carbon film of Ω-cm is formed, and if fired at 800 ° C., about 10 Ω-cm
Is obtained. In this embodiment, PAN has been described. However, any organic polymer having a relatively low resistance when fired, such as an acrylic resin or an imide resin, can be used without particular limitation. Further, a mixture of a graphite fine crystal powder and a low-resistance carbon fine powder mixed with an organic polymer can also be used.

Example 2 Another method of manufacturing the field emission cold cathode shown in FIG. 1 will be described. A tungsten film 8 having a thickness of 0.2 μm is formed on a surface of an insulating substrate, for example, a glass substrate 5 by a sputtering method, a photoresist film is applied to about 1500 A, and a cold cathode 6 and a gate electrode 7 are simultaneously formed by a usual photolithography technique. . The distance between the cold cathode and the gate electrode is 1 to 4 μm. Next, when the photoresist film on the surface of the cold cathode 6 and the gate electrode 7 is heated to 600 ° C. in a vacuum or in an inert gas (non-oxidizing) atmosphere without removing the photoresist film, the resist film becomes a carbon film. Further, the electrode substrate was immersed in a buffer etch solution to reduce the surface of the glass substrate to a depth of about 1 μm.
By etching, a field emission cold cathode having the structure shown in FIG. 1 can be manufactured as in the first embodiment.

A carbon film formed by baking a resist film generally has a specific resistance of 10 6 Ω-cm or more. However, in order to obtain a low-resistance carbon film at a lower baking temperature, baking is performed in the same manner as in Example 1. It is desirable to use a photoresist material in which a predetermined amount of PAN or the like that forms a ring-closed structure, or an acrylic resin, an imide-based resin, or a graphite-like fine powder is mixed.

In the field emission type cold cathode according to the present invention, in which electrons are emitted from the carbon film surface, the low-resistance conductive film is a conventionally used high-melting metal such as W, Mo, Ta, etc., WSi, MoSi.
It is not necessary to limit the material to high melting point metals such as alloys such as WC and TaC.

Advantageous Effects of the Invention As described above, according to the present invention, the fluctuation of the emission current caused by the sudden destruction or shape change of the cold cathode surface due to the concentration of current at the tip of the cold cathode, and the change of the work function are extremely small. A field emission cold cathode can be obtained at low cost.

[Brief description of the drawings]

FIG. 1 is a sectional view of an essential part of an embodiment of a field emission type cold cathode according to the present invention, FIG. 2 is a sectional view of an essential part of another embodiment of the cold cathode, and FIG. FIG. 4 is a perspective view of a conventional field emission cold cathode. 1, 5, an insulating substrate, 2, 6, a cold cathode, 3, 7, a gate electrode, 4, 11, 14, a cold cathode eaves, 8, a low-resistance conductive film, 9, a carbon film, 10 ... recessed insulating substrate, 12 ... PAN
Film, 12 ': carbon film, 13: resist film.

Continuation of front page (56) References JP-A-52-4163 (JP, A) JP-A-63-13247 (JP, A) JP-A-63-274047 (JP, A) (58) Fields studied (Int .Cl. 6 , DB name) H01J 1/30 H01J 9/02

Claims (5)

(57) [Claims]
1. A method of forming a cold cathode and a gate electrode simultaneously by laminating a low resistance film and a carbon film on the surface of an insulating substrate and removing a predetermined region of the laminated low resistance film and the carbon film by photolithography. A method for manufacturing a field emission cold cathode, which is characterized by the following.
2. The carbon film according to claim 1, wherein a low-resistance conductive film and an organic polymer film are laminated on the surface of the insulating substrate, and electrodes are formed by photolithography, followed by heating and baking to form a carbon film. A method for manufacturing a field emission cold cathode.
3. The method according to claim 2, wherein the organic polymer film contains a low-resistance carbon fine powder.
4. A field emission type cold cathode according to claim 1, wherein a cold cathode is formed by photolithography, and the carbon film is formed on the electrode surface by heating and baking while leaving the resist film. Manufacturing method.
5. The method according to claim 4, wherein the resist material is a photoresist containing low-resistance carbon fine powder.
JP18114089A 1989-07-12 1989-07-12 Method of manufacturing field emission cold cathode Expired - Fee Related JP2923980B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18114089A JP2923980B2 (en) 1989-07-12 1989-07-12 Method of manufacturing field emission cold cathode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18114089A JP2923980B2 (en) 1989-07-12 1989-07-12 Method of manufacturing field emission cold cathode

Publications (2)

Publication Number Publication Date
JPH0346729A JPH0346729A (en) 1991-02-28
JP2923980B2 true JP2923980B2 (en) 1999-07-26

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001071758A1 (en) * 2000-03-24 2001-09-27 Kabushiki Kaisha Toshiba Electron source, method of manufacture thereof, and flat display with electron source

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6246168B1 (en) 1994-08-29 2001-06-12 Canon Kabushiki Kaisha Electron-emitting device, electron source and image-forming apparatus as well as method of manufacturing the same
JP3154106B2 (en) 1998-12-08 2001-04-09 キヤノン株式会社 Electron-emitting device, electron source using the electron-emitting device, and image forming apparatus using the electron source
JP3874396B2 (en) 2000-01-13 2007-01-31 パイオニア株式会社 Electron emitting element, manufacturing method thereof, and display device using electron emitting element
JP3647436B2 (en) 2001-12-25 2005-05-11 キヤノン株式会社 Electron-emitting device, electron source, image display device, and method for manufacturing electron-emitting device
JP3840251B2 (en) 2004-03-10 2006-11-01 キヤノン株式会社 Electron emitting element, electron source, image display device, information display reproducing device using the image display device, and method for manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001071758A1 (en) * 2000-03-24 2001-09-27 Kabushiki Kaisha Toshiba Electron source, method of manufacture thereof, and flat display with electron source
GB2366073A (en) * 2000-03-24 2002-02-27 Toshiba Kk Electron source method of manufacture thereof and flat display with electron source
US6670747B2 (en) 2000-03-24 2003-12-30 Kabushiki Kaisha Toshiba Electron source device, method of manufacturing the same, and flat display apparatus comprising an electron source device
GB2366073B (en) * 2000-03-24 2005-03-23 Toshiba Kk Electron source, method of manufacture thereof, and flat display with electron source

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JPH0346729A (en) 1991-02-28

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